JP2002353196A - Method and apparatus for peeling resist - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method for peeling resist by which such a resist not removable completely by dry ashing can be removed surely and efficiently. SOLUTION: This method for peeling the resist left on a substrate 5 after dry etching includes a step of dry ashing the resist left on the substrate 5 and a step of wet-peeling the resist left on the substrate 5 after dry ashing with ozone water excited by ultraviolet rays.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method and an apparatus for removing a resist remaining on an etched substrate.

[0002]

2. Description of the Related Art For example, in a manufacturing process of a semiconductor device or a liquid crystal display device, there are a film forming process and a photo process for forming a circuit pattern on a substrate such as a semiconductor wafer or a glass substrate. In these processes, after processing such as development and etching is performed on the substrate, washing and drying are repeatedly performed.

Since the resist remains on the etched substrate, the resist must be removed before the substrate is washed. As a method of stripping the resist, a wet method using a stripping solution containing an amine-based organic substance is generally used since the resist is usually organic.

On the other hand, as a method of etching a substrate, there are wet etching using an etchant and dry etching performed by converting an active gas into plasma. Recently, dry etching which is excellent in terms of cost, environment and the like has been adopted. They tend to be heavily used.

[0005]

Since the stripping solution containing an amine-based organic substance is very expensive, it is recovered and used repeatedly, but the stripping solution remaining on the substrate is removed by a rinsing solution in a subsequent process. It is inevitable that the gas will be discharged from the factory and be mixed with the exhaust gas and the recovery rate will decrease.

For this reason, when a stripping solution is used for stripping the resist, not only may the cost be increased, but also environmental problems may occur due to discharge from the factory.

An object of the present invention is to provide a resist stripping method and a stripping apparatus which can reliably remove a resist remaining on an etched substrate without using a stripping solution containing an amine-based organic substance. .

[0008]

According to a first aspect of the present invention, there is provided a resist stripping method for removing a resist remaining on a substrate after dry etching, wherein the step of dry-ashing the resist remaining on the substrate is performed. Removing the resist remaining on the substrate by wet ozone water excited by ultraviolet rays.

According to a second aspect of the present invention, there is provided a resist stripping apparatus for removing a resist remaining on a substrate after dry etching, a transporting means for transporting the dry-etched substrate, and a resist remaining on the substrate transported by the transporting means. A resist stripping apparatus, comprising: dry ashing means for dry-ashing a resist; and wet stripping means for wet-stripping the resist remaining on the substrate stripped by the dry ashing means with ozone water excited by ultraviolet rays. It is in.

According to a third aspect of the present invention, the wet peeling means includes a container having a supply portion to which ozone water is supplied and an outflow portion through which the ozone water flows, and a container having a predetermined wavelength accommodated in the container. 3. The resist stripping device according to claim 2, further comprising an ultraviolet lamp that emits ultraviolet light to excite the ozone water to generate active oxygen.

According to a fourth aspect of the present invention, the ultraviolet lamp is one of
4. The resist stripping device according to claim 3, wherein the resist stripping device has a peak wavelength of 72 nm (nanometer).

According to a fifth aspect of the present invention, the ultraviolet lamp is one of
4. The resist removing apparatus according to claim 3, wherein the resist has two peak wavelengths of 85 nm and 254 nm.

According to the present invention, by dry-ashing the substrate after dry-etching, the resist applied to the substrate is likely to remain because the resist applied to the substrate is deteriorated by the influence of heat or the like due to the dry processing. By doing so, it becomes possible to reliably remove the resist that could not be removed by dry ashing.

[0014]

An embodiment of the present invention will be described below with reference to the drawings.

FIG. 1 shows a resist stripping apparatus 1 according to the present invention.
Has a dry ashing device 2 and a wet peeling device 3. The substrate 5 (shown in FIG. 2), which has been etched by the dry etching device 4 in the previous step, is transported to the dry ashing device 2. The substrate 5 conveyed to the dry ashing apparatus 2 is provided with a resist serving as a mask for dry etching on the plate surface.

As the dry etching device 4, a plasma etching device utilizing active species generated by the plasma of the reactive gas is used. As the dry ashing apparatus 2, a plasma stripping apparatus that generates a plasma of a reactive gas and removes the resist by active species contained in the plasma is used as in the etching apparatus.

When the dry-etched substrate 5 is separated by the dry ashing apparatus 2, the resist remaining on the substrate 5 is removed. However, since the substrate 5 has undergone a dry etching process and a dry ashing process, the resist is not removed in the dry ashing process due to the thermal effects of those processes and the reactive gas used in each dry process. And may remain in the form of a film.

The resist 6 remaining on the substrate 5 in the peeling step
In order to remove (shown in FIG. 2), the substrate 5 peeled off by the dry ashing apparatus 3 is carried into the wet peeling apparatus 3, where the resist 6 remaining on the substrate 5 is removed using active oxygen. Ozone water is used to generate active oxygen.

As shown in FIGS. 2 and 3, the ozone water is supplied into a cylindrical container 11 from a supply pipe 12 serving as a supply unit connected to one end surface of the container. In the container 11,
An ultraviolet lamp 13 for irradiating the ozone water supplied into the container 11 with ultraviolet light of a predetermined wavelength is accommodated concentrically. The ultraviolet lamp 13 has, for example, 172 nm.
(Nanometers) peak wavelength. As a result, ozone contained in the ozone water is decomposed to generate oxygen and active oxygen.

Ozone water containing active oxygen is ejected toward the substrate 5 as shown by an arrow from a slit 14 as an outlet formed in the peripheral wall of the container 11 along the axial direction.
The slit 14 is formed to be slightly longer than the width of the substrate 5, and the substrate 5 is transported in a predetermined direction by transport means including transport rollers 15. As a result, ozone water containing active oxygen is supplied to the entire upper surface of the substrate 5, so that the substrate 5 is wet-peeled by the ozone water containing active oxygen.

The ozone concentration of the ozone water generated in the container 11 at room temperature is 20 to 80 ppm, preferably 30 p.
Above pm, the concentration should be as high as possible. By increasing the ozone concentration of the ozone water, it is possible to increase the amount of active oxygen generated by exciting the ozone water with ultraviolet rays. Thus, the resist residue that could not be removed in the dry ashing step can be efficiently decomposed and removed by the strong oxidizing action of active oxygen.

As described above, after the resist 6 provided on the substrate 5 is first removed by dry ashing, the altered resist remaining on the substrate 5 is removed by wet peeling, so that the resist is reliably removed from the substrate 5. Can be removed.

The final step of peeling is a wet method.
Instead of using a stripping solution containing amine-based organic substances as in the past,
By using ozone water and converting the oxygen contained in the ozone water into active oxygen, the peeling effect is improved.

Since the active oxygen disappears in a short time and the ozone contained in the ozone water is converted into oxygen and active oxygen, the ozone water discharged from the container 11 is almost harmless, and the ozone water is inexpensive. is there. Therefore, unlike the case where a stripping solution containing an amine-based organic substance is used, there is no possibility of causing an environmental problem, and it is advantageous in terms of cost.

The wet peeling device 3 has a double tube structure in which an ultraviolet lamp 13 is accommodated in a cylindrical container 11. Therefore, not only can the entire apparatus be made compact, but also the ultraviolet light output from the ultraviolet lamp 13 can be efficiently radiated to the ozone water flowing in the container 11, thereby also generating active oxygen. Efficiency can be increased.

Moreover, by exciting the ozone water with ultraviolet rays of 172 nm, it becomes possible to efficiently generate a large amount of active oxygen in accordance with the concentration of ozone contained in the ozone water. Can be.

The ultraviolet lamp 13 has a peak wavelength of 1
It may output ultraviolet rays having two peak wavelengths of 185 nm and 254 nm instead of 72 nm. In that case, oxygen absorbs 185 nm ultraviolet rays to become ozone, and the ozone is irradiated with 254 nm wavelength ultraviolet rays to generate active oxygen.

[0028]

As described above, according to the present invention, by dry-ashing the substrate after dry-etching, the resist applied to the substrate is likely to remain because the resist is deteriorated by the influence of heat or the like due to the dry processing. By performing wet peeling after dry ashing, it is possible to reliably remove resist that could not be removed by dry ashing.

Moreover, since it is not necessary to use an expensive stripping solution containing an amine-based organic substance as in the prior art, it is advantageous not only in terms of cost but also hardly causes environmental problems.

[Brief description of the drawings]

FIG. 1 is a schematic configuration diagram of an entire apparatus showing an embodiment of the present invention.

FIG. 2 is a side view showing a configuration of a wet peeling device.

FIG. 3 is a partially sectional front view showing the configuration of a wet peeling apparatus.

[Explanation of symbols]

 2 ... Dry ashing apparatus 3 ... Wet peeling apparatus 5 ... Substrate 11 ... Container 12 ... Supply pipe (supply section) 13 ... Ultraviolet lamp 14 ... Slit (outflow section)

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Claims (5)

[Claims] 1. A resist stripping method for removing a resist remaining on a substrate after dry etching, comprising: a step of dry-ashing the resist remaining on the substrate; and an ozone excited by ultraviolet rays on the resist remaining on the substrate by the dry ashing. A step of wet-peeling with water. 2. A resist stripping apparatus for removing a resist remaining on a substrate after dry etching, a transporting means for transporting the dry-etched substrate, and dry-ashing the resist remaining on the substrate transported by the transporting means. A resist stripping apparatus, comprising: dry ashing means; and wet stripping means for wet stripping the resist remaining on the substrate stripped by the dry ashing means with ozone water excited by ultraviolet rays. 3. The wet peeling means includes: a container having a supply portion to which ozone water is supplied and an outflow portion from which the ozone water flows out; 3. The resist stripping device according to claim 2, wherein the resist stripping device is constituted by an ultraviolet lamp which excites and generates active oxygen. 4. The ultraviolet lamp according to claim 3, wherein said ultraviolet lamp has a peak wavelength of 172 nm (nanometer).
The resist stripping apparatus according to the above. 5. The ultraviolet lamp has a wavelength of 185 nm and a wavelength of 254 nm.
4. The resist removing apparatus according to claim 3, wherein the resist removing apparatus has two peak wavelengths of nm.