CN103401251B - A kind of chain type SVG power cell static state voltage equipoise system - Google Patents
A kind of chain type SVG power cell static state voltage equipoise system Download PDFInfo
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- CN103401251B CN103401251B CN201310343766.5A CN201310343766A CN103401251B CN 103401251 B CN103401251 B CN 103401251B CN 201310343766 A CN201310343766 A CN 201310343766A CN 103401251 B CN103401251 B CN 103401251B
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Abstract
The invention discloses a kind of chain type SVG power cell static state voltage equipoise system, wherein, the chain type power cell that chain type SVG accesses three phase network side respectively by three tunnels forms, and each road chain type power cell includes: two or more power cells of mutually connecting; Wherein: each power cell includes: inverter bridge, linear isolation power supply and insulating power supply; Wherein: inverter bridge AC is the input of this power cell, DC side is the busbar voltage of this power cell, and the input of linear isolation power supply in each power cell is connected with the input of the busbar voltage of this power cell or this power cell; The output of the linear isolation power supply in each power cell is connected with the insulating power supply of this power cell and adjacent power unit.The present invention when not needing additionally to increase quiescent dissipation and control circuit, can realize the automatically equalizing voltage between chain type SVG power cell.
Description
Technical field
The present invention relates to the static state voltage equipoise technical field in power electronics, more particularly, relate to a kind of chain type SVG power cell static state voltage equipoise system.
Background technology
Chain type SVG after the power-up, because the circuit board power consumption between power cell there are differences, cause active power between the power cell of series connection inconsistent, when there is no extra static state voltage equipoise device, the quiescent dissipation mainly circuit board losses of power cell, namely the quiescent dissipation after powering between power cell is inconsistent, and the voltage distribution between power cell will be made uneven.The power cell that quiescent dissipation is large divides and forces down, and the little power cell dividing potential drop of quiescent dissipation is high.Circuit board losses due to each power cell is fixing not to be changed with power cell voltage, therefore the relation of quiescent dissipation and dividing potential drop is dispersed, final result is that the power cell voltage that quiescent dissipation is large slowly drops to, treat that voltage drop does not work to the circuit board in power cell, the quiescent dissipation of power cell reduces, the voltage of power cell slowly rises again, after rising to circuit board operating voltage, quiescent dissipation increases, power cell dividing potential drop is slowly fallen again, this phenomenon of iterative cycles like this, between the power cell of therefore chain type SVG, need to add some measures in addition to guarantee that power cell is all pressed.
The method that static state voltage equipoise between current chain type SVG power cell mainly use the input voltage of power cell and adjacent power unit to add circuit board that isolating transformer is this power cell is powered.As shown in Figure 1, TR_1 ~ TR_N is isolating transformer, and its input connects the input of power cell, and the circuit board exporting to this power cell and adjacent power unit is powered.The input rectifier diode of each circuit board carries out rectification, due to the reverse cut-off characteristics of diode, the input of each circuit board only allows transformer secondary voltage the highest Na mono-tunnel conducting, all the other two-way are unloaded, and transformer secondary voltage is directly proportional to the input voltage of power cell, the input voltage of power cell is directly proportional again to the busbar voltage of power cell, namely ensure that that power cell that three power cell median generatrix voltage is the highest is in power circuit board electricity consumption, like this will power cell voltage high for busbar voltage toward drop-down, after this power cell voltage drop to the voltage being less than adjacent power unit, be automatically brought to adjacent power unit again to power, so achieve the static state voltage equipoise between power cell.The shortcoming of this scheme needs to increase isolating transformer, and system under operation, the input voltage of power cell is impulse waveform, harmonic wave is very large, the capacity of this transformer needs to do more much bigger than circuit board capacity, just can meet the demands, and humorous wave interference is introduced in the middle of late-class circuit.
Summary of the invention
In view of this, the invention provides a kind of chain type SVG power cell static state voltage equipoise system, when not needing additionally to increase quiescent dissipation and control circuit, the automatically equalizing voltage between chain type SVG power cell can be realized.
For solving the problems of the technologies described above, the technical solution used in the present invention is: a kind of chain type SVG power cell static state voltage equipoise system, wherein, the chain type power cell that chain type SVG accesses three phase network side respectively by three tunnels forms, and each road chain type power cell includes: two or more power cells of mutually connecting; Wherein:
Described each power cell includes: inverter bridge, linear isolation power supply and insulating power supply; Wherein:
Described inverter bridge AC is the input of power cell, and described inverter bridge DC side is the busbar voltage of power cell;
The input of linear isolation power supply in described each power cell is connected with the input of the busbar voltage of this power cell or this power cell;
The output of the linear isolation power supply in described each power cell is connected with the insulating power supply of this power cell and adjacent power unit.
Preferably, also comprise in described each power cell: two groups or three groups of rectifier diode groups; Wherein:
Described rectifier diode group of often organizing includes the first rectifier diode and the second rectifier diode;
The positive pole of the first rectifier diode wherein in one group of rectifier diode group is connected with the positive output end of the linear isolation power supply in this power cell, and negative pole is connected with the negative pole of the first rectifier diode in all the other rectifier diode groups; The negative pole of the second rectifier diode is connected with the negative output terminal of the linear isolation power supply in this power cell, and positive pole is connected with the positive pole of the second rectifier diode in all the other rectifier diode groups; The negative pole of the first rectifier diode in described one group of rectifier diode group is also connected with negative input end with the positive input terminal of insulating power supply in this power cell respectively with the positive pole of the second rectifier diode;
The positive pole of the first rectifier diode in all the other rectifier diode groups is connected with the positive output end of the linear isolation power supply in adjacent power unit, and the negative pole of the second rectifier diode is connected with the negative output terminal of the insulating power supply in adjacent power unit.
Preferably, the rectifier diode group in described each power cell is connected between described linear isolation power supply and insulating power supply, or is integrated in described insulating power supply.
Preferably, described each power cell also comprises: be connected to the grading resistor in power cell input or power cell busbar voltage.
Preferably, described inverter bridge comprises: electric capacity, the first igbt transistor, the second igbt transistor, the 3rd igbt transistor and the 4th igbt transistor; Wherein:
Described Capacitance parallel connection is in busbar voltage;
Described first igbt transistor is connected with described linear isolation power supply respectively with the collector electrode of the second igbt transistor;
The emitter of described first igbt transistor is connected with the collector electrode of described 3rd igbt transistor;
The emitter of described second igbt transistor is connected with the collector electrode of described 4th igbt transistor;
Described 3rd igbt transistor is connected with described linear isolation power supply with the emitter of the 4th igbt transistor.
As can be seen from above-mentioned technical scheme, a kind of chain type SVG power cell static state voltage equipoise system disclosed by the invention, due to parallel with one another between the linear isolation power supply that is connected with the insulating power supply in each power cell, the electric power output voltage of linear isolation power supply is directly proportional to input voltage, therefore, when voltage between power cell is unbalanced, the highest power cell of linear isolation electric power output voltage is only had to power to the insulating power supply in this power cell and the insulating power supply in adjacent power unit, therefore, the highest power cell power consumption of unit busbar voltage is much larger than the low power cell of the busbar voltage be adjacent, so the power cell that unit busbar voltage is high, its busbar voltage will slowly decline, the busbar voltage of the power cell be adjacent slowly rises, when the busbar voltage of the power cell be adjacent has exceeded the busbar voltage of the high power cell of original busbar voltage, forward the high power cell of new busbar voltage to power to the insulating power supply in this power cell and the insulating power supply in adjacent power unit, iterative cycles like this, finally make the voltage difference between power cell very little, reach the effect of all pressing between power cell.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
The isolating transformer equalizer circuit of Fig. 1 disclosed in prior art between chain type SVG power cell;
Fig. 2 is the structural representation of a kind of chain type SVG power cell static state voltage equipoise system disclosed by the invention;
Fig. 3 is the connection diagram of insulating power supply disclosed by the invention and linear isolation power supply;
Fig. 4 is the circuit diagram of power cell disclosed by the invention.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, be clearly and completely described the technical scheme in the embodiment of the present invention, obviously, described embodiment is only a part of embodiment of the present invention, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
The embodiment of the invention discloses a kind of chain type SVG power cell static state voltage equipoise system, when not needing additionally to increase quiescent dissipation and control circuit, the automatically equalizing voltage between chain type SVG power cell can be realized.
As shown in Figure 2, for a kind of chain type SVG power cell static state voltage equipoise system disclosed by the invention, wherein, the chain type power cell that chain type SVG accesses three phase network side respectively by three tunnels forms, and each road chain type power cell includes: two or more power cells of mutually connecting; Wherein:
Each power cell includes: inverter bridge, linear isolation power supply DR1 and insulating power supply DR2; Wherein:
Inverter bridge AC is the input of this power cell, and inverter bridge DC side is the busbar voltage of this power cell;
The input of the linear isolation power supply DR1 in each power cell is connected with the busbar voltage of this power cell or the input of this power cell;
The output of the linear isolation power supply DR1 in each power cell is connected with the insulating power supply DR2 of this power cell and adjacent power unit.
As shown in Figure 2, DR1 is the linear isolation power supply in power cell, and power cell busbar voltage is got in its input, and the electric power output voltage of linear isolation power supply DR1 is directly proportional to input voltage; DR2 is the insulating power supply in power cell, the output voltage of this power cell and adjacent power unit wires sexual isolation power supply DR1 is got in its input, Unit_1 ~ Unit_N is the item of power cell, VAC_1 ~ VAC_N is the input voltage of corresponding item power cell, VDC_1 ~ VDC_N is the busbar voltage of corresponding item power cell, and its size is directly proportional with corresponding power cell input voltage VAC.The busbar voltage of power cell slowly rises after the power-up, after linear isolation power supply DR1 starts, the power consumption sum primarily of linear isolation power supply DR1 and insulating power supply DR2 of all pressing of power cell is determined, because linear isolation power supply DR1 is only Switching Power Supply, basic load is all on insulating power supply DR2, and therefore the power consumption of power cell is determined by insulating power supply DR2 substantially.Due to parallel with one another between the linear isolation power supply DR1 that is connected with the insulating power supply DR2 in each power cell, and the electric power output voltage of linear isolation power supply DR1 is directly proportional to input voltage, therefore the highest that power cell of busbar voltage is being powered for insulating power supply DR2.Such as, when having two adjacent power unit, in these three power cells, the highest power cell of linear isolation power supply DR1 output voltage is only had to power to the insulating power supply DR2 in this power cell and the insulating power supply DR2 in adjacent two power cells, namely that the highest power cell of busbar voltage is only had to power for insulating power supply DR2, the linear isolation power supply DR1 of all the other two power cells only has no-load power consumption, almost can ignore, therefore, the highest power cell power consumption of busbar voltage is much larger than the low power cell of two busbar voltages be adjacent, so the power cell that busbar voltage is high, its busbar voltage will slowly decline, the busbar voltage of all the other adjacent two power cells slowly rises, until the busbar voltage of a power cell in the low power cell of two original busbar voltages has exceeded the busbar voltage of the high power cell of original busbar voltage, the power cell just forwarding new busbar voltage to high is powered to insulating power supply DR2, iterative cycles like this, voltage difference between final power cell will be very little, reach the effect of all pressing between power cell.
As shown in Figure 3, be the connection diagram of insulating power supply disclosed by the invention and linear isolation power supply.Shown in figure be insulating power supply respectively with the connection diagram of the linear isolation power supply of this power cell and the linear isolation power supply of adjacent two power cells, connection diagram and Fig. 3 of the linear isolation power supply of insulating power supply and this power cell and the linear isolation power supply of an adjacent power cell are similar, do not repeat them here.
As shown in Figure 3, also comprise three groups of rectifier diode groups 21 in each power cell, when insulating power supply DR2 is only connected with this power cell and an adjacent power cell, the rectifier diode group in power cell is two groups.Often organize in rectifier diode group 21 and include the first rectifier diode 211 and the second rectifier diode 212.
As shown in Figure 3, Vout+, Vout-are the positive and negative terminals of output of linear isolation power supply DR1, and input voltage and the unit busbar voltage of its size and linear isolation power supply DR1 are directly proportional.
The positive pole of the first rectifier diode wherein in one group of rectifier diode group is connected with the positive output end Vout+ of the linear isolation power supply DR1 in this power cell, and negative pole is connected with the negative pole of the first rectifier diode in all the other rectifier diode groups; The negative pole of the second rectifier diode is connected with the negative output terminal Vout-of the linear isolation power supply DR1 in this power cell, and positive pole is connected with the positive pole of the second rectifier diode in all the other rectifier diode groups; The negative pole of the first rectifier diode in one group of rectifier diode group and the positive pole of the second rectifier diode are also connected with negative input end with the positive input terminal of insulating power supply DR2 in this power cell respectively;
The positive pole of the first rectifier diode in all the other rectifier diode groups is connected with the positive output end of the linear isolation power supply in adjacent power unit, and the negative pole of the second rectifier diode is connected with the negative output terminal of the linear isolation power supply in adjacent power unit.
In the above-described embodiments, the rectifier diode group in each power cell except as shown in Figure 3 be integrated in insulating power supply DR2, can also be connected between linear isolation power supply DR1 and insulating power supply DR2.
In the above-described embodiments, the output of the linear isolation power supply DR1 of three adjacent power cells, by in parallel after rectifier diode, therefore in three power cells, the highest power cell of linear isolation power supply DR1 output voltage is only had to power to insulating power supply DR2 by rectifier diode, namely that the highest power cell of busbar voltage is only had to be that insulating power supply DR2 powers, the linear isolation power supply DR1 of all the other two power cells only has no-load power consumption, almost can ignore, therefore, the highest power cell power consumption of busbar voltage is much larger than the low power cell of all the other two busbar voltages, so the busbar voltage of the highest power cell of busbar voltage will slowly decline, the busbar voltage of all the other adjacent two power cells slowly rises, when the busbar voltage of the power cell of in two power cells has exceeded the busbar voltage of the highest power cell of original busbar voltage, just turn and powered to insulating power supply DR2 by the power cell that new busbar voltage is the highest, iterative cycles like this, voltage difference between final power cell will be very little, reach the effect of all pressing between power cell.
As shown in Figure 4, for the circuit diagram of power cell disclosed by the invention, comprising: linear isolation power supply DR1, insulating power supply DR2, electric capacity C1, grading resistor R1, the first igbt transistor Q1, the second igbt transistor Q2, the 3rd igbt transistor Q3 and the 4th igbt transistor Q4; Wherein:
Electric capacity C1, the first igbt transistor Q1, the second igbt transistor Q2, the 3rd igbt transistor Q3 and the 4th igbt transistor Q4 form the inverter bridge of power cell;
Insulating power supply DR2 is connected with linear isolation power supply DR1;
Electric capacity C1 is connected in parallel in busbar voltage;
First igbt transistor Q1 is connected with linear isolation power supply DR1 respectively with the collector electrode of the second igbt transistor Q2;
The emitter of the first igbt transistor Q1 is connected with the collector electrode of the 3rd igbt transistor Q3;
The emitter of the second igbt transistor Q2 is connected with the collector electrode of the 4th igbt transistor Q4;
3rd igbt transistor Q3 is connected with linear isolation power supply DR1 with the emitter of the 4th igbt transistor Q4;
Grading resistor R one end is connected with the emitter of the first igbt transistor Q1, and the other end is connected with the emitter of the second igbt transistor Q2.
In power cell, grading resistor R is except the situation shown in Fig. 4, can also be connected in the busbar voltage of power cell, namely in parallel with electric capacity C1 in Fig. 4, the input position of linear isolation power supply DR1 is except situation as indicated at 4, the input of power cell can also be connected to, namely in parallel with the grading resistor R1 in Fig. 4.
After above-mentioned disclosed power cell powers on, busbar voltage slowly rises, at linear isolation power supply DR1 not before starting resistor, linear isolation power supply DR1 does not have power consumption substantially, all pressures between power cell are completed by grading resistor R1, after linear isolation power supply DR1 starts, all pressures of power cell are primarily of grading resistor R1, the power consumption sum of linear isolation power supply DR1 and insulating power supply DR2 is determined, because linear isolation power supply DR1 is only Switching Power Supply, basic load is all on insulating power supply DR2, grading resistor R1 power consumption is less, therefore the power consumption of power cell is determined by insulating power supply DR2 substantially.Due to the output of the linear isolation power supply DR1 of adjacent three power cells, by in parallel after the rectifier diode in insulating power supply DR2, therefore in these three power cells, only has power cell that linear isolation power supply DR1 output voltage is the highest by rectifier diode, power to insulating power supply DR2, namely that the highest power cell of busbar voltage is only had to be that insulating power supply DR2 powers, the linear isolation power supply DR1 of all the other two power cells only has no-load power consumption, almost can ignore, therefore, the highest power cell power consumption of busbar voltage is much larger than the low power cell of all the other two busbar voltages, so the power cell that busbar voltage is high, its busbar voltage will slowly decline, the busbar voltage of all the other two power cells slowly rises, until in the low power cell of two original busbar voltages, the busbar voltage of one of them power cell has exceeded the busbar voltage of the high power cell of original busbar voltage, the power cell just forwarding new busbar voltage to high is powered to insulating power supply DR2, iterative cycles like this, voltage difference between final power cell will be very little, reach the effect of all pressing between power cell.
In this specification, each embodiment adopts the mode of going forward one by one to describe, and what each embodiment stressed is the difference with other embodiments, between each embodiment identical similar portion mutually see.
To the above-mentioned explanation of the disclosed embodiments, professional and technical personnel in the field are realized or uses the present invention.To be apparent for those skilled in the art to the multiple amendment of these embodiments, General Principle as defined herein can without departing from the spirit or scope of the present invention, realize in other embodiments.Therefore, the present invention can not be restricted to these embodiments shown in this article, but will meet the widest scope consistent with principle disclosed herein and features of novelty.
Claims (5)
1. a chain type SVG power cell static state voltage equipoise system, wherein, the chain type power cell that chain type SVG accesses three phase network side respectively by three tunnels forms, and it is characterized in that, each road chain type power cell includes: two or more power cells of mutually connecting; Wherein:
Each described power cell includes: circuit board, inverter bridge, linear isolation power supply and insulating power supply; Wherein:
Described inverter bridge AC is the input of power cell, and described inverter bridge DC voltage is the busbar voltage of power cell;
The input of linear isolation power supply in each described power cell is connected with the input of the busbar voltage of this power cell or this power cell;
The output of the linear isolation power supply in each described power cell is connected with the insulating power supply of this power cell and adjacent power unit;
Described insulating power supply and circuit board are electrically connected.
2. chain type SVG power cell static state voltage equipoise system according to claim 1, is characterized in that, also comprise in each described power cell: two groups or three groups of rectifier diode groups; Wherein:
Described rectifier diode group of often organizing includes the first rectifier diode and the second rectifier diode;
The positive pole of the first rectifier diode wherein in one group of rectifier diode group is connected with the positive output end of the linear isolation power supply in this power cell, and negative pole is connected with the negative pole of the first rectifier diode in all the other rectifier diode groups; The negative pole of the second rectifier diode is connected with the negative output terminal of the linear isolation power supply in this power cell, and positive pole is connected with the positive pole of the second rectifier diode in all the other rectifier diode groups; The negative pole of the first rectifier diode in described one group of rectifier diode group is also connected with negative input end with the positive input terminal of insulating power supply in this power cell respectively with the positive pole of the second rectifier diode;
The positive pole of the first rectifier diode in all the other rectifier diode groups is connected with the positive output end of the linear isolation power supply in adjacent power unit, and the negative pole of the second rectifier diode is connected with the negative output terminal of the insulating power supply in adjacent power unit.
3. chain type SVG power cell static state voltage equipoise system according to claim 2, it is characterized in that, the rectifier diode group in described each power cell is connected between described linear isolation power supply and insulating power supply, or is integrated in described insulating power supply.
4. chain type SVG power cell static state voltage equipoise system according to claim 1, it is characterized in that, described each power cell also comprises: be connected to the grading resistor in power cell input or power cell busbar voltage.
5. chain type SVG power cell static state voltage equipoise system according to claim 1, it is characterized in that, described inverter bridge comprises: electric capacity, the first igbt transistor, the second igbt transistor, the 3rd igbt transistor and the 4th igbt transistor; Wherein:
Described Capacitance parallel connection is in busbar voltage;
Described first igbt transistor is connected with described linear isolation power supply respectively with the collector electrode of the second igbt transistor;
The emitter of described first igbt transistor is connected with the collector electrode of described 3rd igbt transistor;
The emitter of described second igbt transistor is connected with the collector electrode of described 4th igbt transistor;
Described 3rd igbt transistor is connected with described linear isolation power supply with the emitter of the 4th igbt transistor.
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| CN102723734A (en) * | 2012-06-29 | 2012-10-10 | 西安交通大学 | Voltage control method of Y-type connected direct-current bus of serially-connected H bridge multi-level grid-connected inverter |
| CN102891617A (en) * | 2011-07-18 | 2013-01-23 | 清华大学 | Passive voltage-equalizing control circuit |
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| CN102891617A (en) * | 2011-07-18 | 2013-01-23 | 清华大学 | Passive voltage-equalizing control circuit |
| CN102723734A (en) * | 2012-06-29 | 2012-10-10 | 西安交通大学 | Voltage control method of Y-type connected direct-current bus of serially-connected H bridge multi-level grid-connected inverter |
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