CN202535294U

CN202535294U - High-frequency inverter pulse power supply used in electrodeless lamps

Info

Publication number: CN202535294U
Application number: CN201220097070XU
Authority: CN
Inventors: 陈朝军; 文永益
Original assignee: CHONGQING AURORA ELECTRIC APPLIANCE Co Ltd
Current assignee: CHONGQING AURORA ELECTRIC APPLIANCE Co Ltd
Priority date: 2012-03-15
Filing date: 2012-03-15
Publication date: 2012-11-14
Anticipated expiration: 2022-03-15

Abstract

The utility model discloses a high-frequency inverter pulse power supply used in electrodeless lamps, belonging to the field of power supply. The high-frequency inverter pulse power supply used in electrodeless lamps comprises a high-frequency pulse generator and an inverter, wherein the output end of the high-frequency pulse generator is connected with a first input end of the inverter, and the high-frequency pulse generator outputs signals to the inverter. According to the utility model, operating frequencies required for different electrodeless lamps can be provided; and the waveform generated by the high-frequency pulse generator meets the requirements of power devices used by the inverter, which makes the high-frequency inverter pulse power supply used in electrodeless lamps higher in stability and lower in ripple.

Description

The high-frequency inversion pulse power that is used for electrodeless lamp

Technical field

The utility model belongs to field of power supplies, particularly relates to a kind of high-frequency inversion pulse power that is used for electrodeless lamp.

Background technology

The high-frequency inversion pulse power is the core of electrodeless lamp; Existing high-frequency inversion pulse power stability is not high; The output waveform of high frequency pulse generator and the inconsistent situation of waveform of the power device needs that inverter uses usually appear on electrodeless lamp is used; Effect is bad and be prone to cause the damage of power device, and the simple combination ripple of high frequency pulse generator and inverter is too high under the existing structure, precision is not high.

Therefore those skilled in the art are devoted to develop the high-frequency inversion pulse power that is used for electrodeless lamp that a kind of ripple is low, stability is higher.

The utility model content

Because the above-mentioned defective of prior art, the utility model technical problem to be solved provides the high-frequency inversion pulse power that is used for electrodeless lamp that a kind of ripple is low, stability is higher.

For realizing above-mentioned purpose, the utility model provides a kind of high-frequency inversion pulse power that is used for electrodeless lamp, comprises high frequency pulse generator and inverter; The output of said high frequency pulse generator connects the first input end of said inverter; Said high frequency pulse generator outputs signal to inverter.

Said high frequency pulse generator comprises first control chip; The RT end of said first control chip is through first resistance and first capacity earth of series connection, and the RT end of said first control chip is through second grounding through resistance; The VCC end of said first control chip is through second electric capacity and the 3rd capacity earth of parallel connection; The DGND end of said first control chip, LC end, PGND hold equal ground connection.

Said inverter comprises second control chip; The V1A end of the said second control chip IC2 is connected with the NDRV1 end with the NDRV2 end of said first control chip respectively with the V1B end; The GND1 end of said second control chip, GNDB hold equal ground connection; The VDDB end of said second control chip is connected with the VCC end of said first control chip; The VDDB end of said second control chip is connected with the VADJ end of said second control chip through first diode; The VDDB end of said second control chip connects the positive pole of first diode; The negative pole of said first diode connects the VADJ end of said second control chip; The negative pole of said first diode connects the GNDA end of said second control chip through the 4th electric capacity; The VOA end of said second control chip connects the grid of a N type metal-oxide-semiconductor through the 3rd resistance; Said the 3rd resistance two ends are parallel with second diode; The VOB end of the said second control chip IC2 connects the grid of the 2nd N type metal-oxide-semiconductor through the 4th resistance; Said the 4th resistance two ends are parallel with the 3rd diode; The drain electrode of a said N type metal-oxide-semiconductor connects the negative pole of the 4th diode, and the source electrode of a said N type metal-oxide-semiconductor connects the positive pole of the 4th diode; The drain electrode of said the 2nd N type metal-oxide-semiconductor connects the negative pole of the 5th diode, and the source electrode of said the 2nd N type metal-oxide-semiconductor connects the positive pole of said the 5th diode; The source electrode of a said N type metal-oxide-semiconductor connects the drain electrode of said the 2nd N type metal-oxide-semiconductor; The source electrode of a said N type metal-oxide-semiconductor connects the GNDA end of said second control chip.

Second input of said inverter connects the output of APFC; Said inverter is given in said APFC output DC source.

The beneficial effect of the utility model is: the utility model can provide the frequency of utilization of different electrodeless lamp demands; Because the waveform that high frequency pulse generator sends satisfies the needs of the power device of inverter use, makes that the utility model stability is higher, ripple is lower.

Description of drawings

Fig. 1 is the circuit diagram of the utility model embodiment one.

Fig. 2 is the circuit theory sketch map of the utility model embodiment two.

Embodiment

Below in conjunction with accompanying drawing and embodiment the utility model is described further:

Embodiment one: as shown in Figure 1, the utility model is made up of high frequency pulse generator 1 and inverter 2; The output of said high frequency pulse generator 1 connects the first input end of said inverter 2; Said high frequency pulse generator 1 outputs signal to inverter 2.

Said high frequency pulse generator 1 comprises the first control chip IC1; The RT end of the said first control chip IC1 is through first resistance R 1 and first capacitor C, 1 ground connection of series connection, and the RT end of the said first control chip IC1 is through second resistance R, 2 ground connection; The VCC end of the said first control chip IC1 is through second capacitor C 2 and the 3rd capacitor C 3 ground connection of parallel connection; The DGND end of the said first control chip IC1, LC end, PGND hold equal ground connection.

Said inverter 2 comprises the second control chip IC2; The V1A end of the said second control chip IC2 is connected with the NDRV1 end with the NDRV2 end of the said first control chip IC1 respectively with the V1B end; The GND1 end of the said second control chip IC2, GNDB hold equal ground connection; The VDDB end of the said second control chip IC2 is connected with the VCC end of the said first control chip IC1; The VDDB end of the said second control chip IC2 is connected with the VADJ end of the said second control chip IC2 through the first diode D1; The VDDB end of the said second control chip IC2 connects the positive pole of the first diode D1; The negative pole of the said first diode D1 connects the VADJ end of the said second control chip IC2; The negative pole of the said first diode D1 connects the GNDA end of the said second control chip IC2 through the 4th capacitor C 4; The VOA end of the said second control chip IC2 connects the grid of a N type metal-oxide-semiconductor Q1 through the 3rd resistance R 3; Said the 3rd resistance R 3 two ends are parallel with the second diode D2; The VOB end of the said second control chip IC2 connects the grid of the 2nd N type metal-oxide-semiconductor Q2 through the 4th resistance R 4; Said the 4th resistance R 4 two ends are parallel with the 3rd diode D3; The drain electrode of a said N type metal-oxide-semiconductor Q1 connects the negative pole of the 4th diode D4, and the source electrode of a said N type metal-oxide-semiconductor Q1 connects the positive pole of the 4th diode D4; The drain electrode of said the 2nd N type metal-oxide-semiconductor Q2 connects the negative pole of the 5th diode D5, and the source electrode of said the 2nd N type metal-oxide-semiconductor Q2 connects the positive pole of said the 5th diode D5; The source electrode of a said N type metal-oxide-semiconductor Q1 connects the drain electrode of said the 2nd N type metal-oxide-semiconductor Q1; The source electrode of a said N type metal-oxide-semiconductor Q1 connects the GNDA end of the said second control chip IC2; The GNDA end of the said second control chip IC2 is supplied power to impedance matching circuit.

The said first control chip IC1 adopts the MAX5075 chip to realize, the said second control chip IC3 adopts the ADUM1230 chip to realize.

Said high frequency pulse generator 1 sends signal and gives said inverter 2, makes inverter 2 send that signal drives a N type metal-oxide-semiconductor Q1 and the 2nd N type metal-oxide-semiconductor Q2 transfers DC power supply to high-frequency ac power and output, and the out-put supply ripple is low, and stability is high.

Embodiment two: as shown in Figure 2, the structure of present embodiment and embodiment one is basic identical, and different is: second input of said inverter 2 connects the output of APFC 3; Said inverter 2 is given in said APFC 3 output DC sources, and alternating current input power supplying is after rectification and filtering, and nonlinear load makes input current waveform distort; Input current is impulse waveform; Contain a large amount of harmonic components, make power factor very low, therefore use APFC to reduce harmonic component; Reduce line loss, improve power factor.

More than describe the preferred embodiment of the utility model in detail.Should be appreciated that those of ordinary skill in the art need not creative work and just can make many modifications and variation according to the design of the utility model.Therefore, all technical staff in the art according to the design of the utility model on the basis of existing technology through the available technical scheme of logical analysis, reasoning, or a limited experiment, all should be in determined protection range by claims.

Claims

1. a high-frequency inversion pulse power that is used for electrodeless lamp comprises high frequency pulse generator (1), it is characterized in that: also comprise inverter (2); The output of said high frequency pulse generator (1) connects the first input end of said inverter (2); Said high frequency pulse generator (1) outputs signal to inverter (2).

2. the high-frequency inversion pulse power that is used for electrodeless lamp as claimed in claim 1; It is characterized in that: said high frequency pulse generator (1) comprises first control chip (IC1); The RT end of said first control chip (IC1) is through first resistance (R1) and first electric capacity (C1) ground connection of series connection, and the RT end of said first control chip (IC1) is through second resistance (R2) ground connection; The VCC end of said first control chip (IC1) is through second electric capacity (C2) and the 3rd electric capacity (C3) ground connection of parallel connection; The DGND end of said first control chip (IC1), LC end, PGND hold equal ground connection.

3. according to claim 1 or claim 2 the high-frequency inversion pulse power that is used for electrodeless lamp, it is characterized in that: said inverter (2) comprises second control chip (IC2); The V1A end of said second control chip (IC2) is connected with the NDRV1 end with the NDRV2 end of said first control chip (IC1) respectively with the V1B end; The GND1 end of said second control chip (IC2), GNDB hold equal ground connection; The VDDB end of said second control chip (IC2) is connected with the VCC end of said first control chip (IC1); The VDDB end of said second control chip (IC2) is connected with the VADJ end of said second control chip (IC2) through first diode (D1); The VDDB end of said second control chip (IC2) connects the positive pole of first diode (D1); The negative pole of said first diode (D1) connects the VADJ end of said second control chip (IC2); The negative pole of said first diode (D1) connects the GNDA end of said second control chip (IC2) through the 4th electric capacity (C4); The VOA end of said second control chip (IC2) connects the grid of a N type metal-oxide-semiconductor (Q1) through the 3rd resistance (R3); Said the 3rd resistance (R3) two ends are parallel with second diode (D2); The VOB end of said second control chip (IC2) connects the grid of the 2nd N type metal-oxide-semiconductor (Q2) through the 4th resistance (R4); Said the 4th resistance (R4) two ends are parallel with the 3rd diode (D3); The drain electrode of a said N type metal-oxide-semiconductor (Q1) connects the negative pole of the 4th diode (D4), and the source electrode of a said N type metal-oxide-semiconductor (Q1) connects the positive pole of the 4th diode (D4); The drain electrode of said the 2nd N type metal-oxide-semiconductor (Q2) connects the negative pole of the 5th diode (D5), and the source electrode of said the 2nd N type metal-oxide-semiconductor (Q2) connects the positive pole of said the 5th diode (D5); The source electrode of a said N type metal-oxide-semiconductor (Q1) connects the drain electrode of said the 2nd N type metal-oxide-semiconductor (Q1); The source electrode of a said N type metal-oxide-semiconductor (Q1) connects the GNDA end of said second control chip (IC2).

4. the high-frequency inversion pulse power that is used for electrodeless lamp as claimed in claim 1 is characterized in that: second input of said inverter (2) connects the output of APFC (3); Said inverter (2) is given in said APFC (3) output DC source.