CN103400891A - Preparation method of SiO2 passivation layer of back passivation battery - Google Patents
Preparation method of SiO2 passivation layer of back passivation battery Download PDFInfo
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- CN103400891A CN103400891A CN2013102827739A CN201310282773A CN103400891A CN 103400891 A CN103400891 A CN 103400891A CN 2013102827739 A CN2013102827739 A CN 2013102827739A CN 201310282773 A CN201310282773 A CN 201310282773A CN 103400891 A CN103400891 A CN 103400891A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention discloses a preparation method of a SiO2 passivation layer of a back passivation battery. The preparation method adopts a thermal oxide growth process, and at least comprises two steps of heat processing in a whole process procedure. The two steps of heat processing comprises the following concrete steps of (1) growth of the SiO2 passivation layer: under the temperature condition of 850-1000 DEG C, feeding mixed gas of nitrogen and oxygen to oxidize a silicon wafer, wherein the oxidization time is ranged from 10 to 90 minutes, and the volume ratio of the oxygen is controlled to be ranged from 5 to 50 percent; and (2) low-temperature annealing: after finishing the oxidation process, cooling to be at 400-800 DEG C, and feeding the nitrogen to anneal the generated SiO2 passivation layer, wherein the annealing time is ranged from 30 to 90 minutes. According to the preparation method, the quality of the SiO2 passivation layer is improved through optimizing the ratio of temperature and gas during the oxidation process, and increasing a low-temperature annealing process after oxidization, so that the passivation effect is improved, and finally the efficiency of a silicon solar cell is improved.
Description
Technical field
The invention belongs to the polysilicon solar cell technical field, particularly relate to a kind of high-quality SiO of passivating back battery
2The preparation method of passivation layer.
Background technology
Traditional commercialization large single crystal cell photoelectric transformation efficiency is in 18.6% left and right, and if stack is just being looked like the technology behind efficiencies such as SE and Implantation and can be reached 19%.And thereby this kind technology is mainly the raising that improves short wavelength's spectral response acquisition battery efficiency.But in the component package process, due to glass and EVA to short wavelength's absorption and by, make the efficiency gain that obtains in battery-end can not all embody at the assembly end.And, in addition due to the progress of Size Technology, make present square resistance improve, reduced the efficiency variance with SE etc.So the improved advantage of Front-surface Technique is more and more less.
And the high-quality SiO of passivating back utilization
2Perhaps Al
2O
3Passivation layer replaces traditional aluminium back surface field and carries out passivation, through SiO
2Perhaps Al
2O
3The silicon chip of passivation, its recombination-rate surface is reduced to 20cm/s by the 2000cm/s of aluminium back surface field, has significantly improved minority carrier life time, and its peak efficiency is lifted at 1% left and right.And the passivating back technology mainly improves the battery long wavelength and responds the raising of acquisition efficiency, so do not have component package, loses the shortcomings such as excessive.
The quality of backside passivation layer quality, can directly affect improved efficiency.
Summary of the invention
The high-quality SiO that the purpose of this invention is to provide a kind of passivating back battery
2The preparation method of passivation layer, by optimizing temperature and the gas ratio in oxidizing process, and the process annealing process that is increased in after oxidation is improved SiO
2The quality of passivation layer, finally obtain the lifting of silicon solar cell efficiency thereby improve passivation effect.
The present invention realizes that the technical scheme that above-mentioned purpose is taked is, a kind of passivating back battery SiO
2The preparation method of passivation layer, adopt thermal oxide growth technique, it is characterized in that, in whole technical process, comprises at least two step heat treatments.
As a kind of preferred, in described two step heat treatments, low 50 ℃ ~ 400 ℃ of the heat treated temperature of the relative first step of the heat treated temperature of second step, the rate of temperature fall between described two step heat treatments is 1 ℃/min ~ 15 ℃/min.
As further preferred, described two heat treated concrete steps of step are as follows:
⑴ SiO
2The growth of passivation layer: under the temperature conditions of 850 ℃ ~ 1000 ℃, pass into the mist of nitrogen and oxygen, silicon chip is carried out oxidation, oxidization time is between 10min ~ 90min, and wherein the volume ratio of oxygen is controlled between 5% ~ 50%;
⑵ process annealing: after completing oxidizing process, cool to 400 ℃ ~ 800 ℃, pass into the SiO of nitrogen to generating
2Passivation layer carries out annealing in process, and annealing time is between 30min ~ 90min.
The present invention is by improving SiO
2Oxygen proportion in the passivation layer preparation process, reach the purpose of growing high-quality passivation layer.Increase in addition the process annealing step after oxidation, thereby the compactness that increases oxide layer improves passivation effect, finally obtains the lifting of silicon solar cell efficiency.
Embodiment
Embodiment 1: surface treated silicon chip is placed in the tubular type oxidation furnace and heat-treats.At first in nitrogen oxygen mixed gas, carry out the oxidation of 30min at the temperature of 900 ℃, oxygen proportion is 50%.Cool to 700 ℃ with 10 ℃/min after oxidation is completed, pass into a large amount of nitrogen, to the SiO of high-temperature oxydation growth
2Passivation layer carries out annealing in process, and annealing time is 60min.
Embodiment 2: surface treated silicon chip is placed in the tubular type oxidation furnace and heat-treats.At first in nitrogen oxygen mixed gas, carry out the oxidation of 60min at the temperature of 860 ℃, oxygen proportion is 70%.Cool to 650 ℃ with 5 ℃/min after oxidation is completed, pass into a large amount of nitrogen, to the SiO of high-temperature oxydation growth
2Passivation layer carries out annealing in process, and annealing time is 40min.
Claims (3)
1. passivating back battery SiO
2The preparation method of passivation layer, adopt thermal oxide growth technique, it is characterized in that, in whole technical process, comprises at least two step heat treatments.
2. passivating back battery SiO according to claim 1
2The preparation method of passivation layer, is characterized in that, in described two step heat treatments, the heat treated temperature of the relative first step of the heat treated temperature of second step is low 50 ℃ ~ 400 ℃, and the rate of temperature fall between described two step heat treatments is 1 ℃/min ~ 15 ℃/min.
3. passivating back battery SiO according to claim 2
2The preparation method of passivation layer, is characterized in that, described two heat treated concrete steps of step are as follows:
⑴ SiO
2The growth of passivation layer: under the temperature conditions of 850 ℃ ~ 1000 ℃, pass into the mist of nitrogen and oxygen, silicon chip is carried out oxidation, oxidization time is between 10min ~ 90min, and wherein the volume ratio of oxygen is controlled between 5% ~ 50%;
⑵ process annealing: after completing oxidizing process, cool to 400 ℃ ~ 800 ℃, pass into the SiO of nitrogen to generating
2Passivation layer carries out annealing in process, and annealing time is between 30min ~ 90min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013102827739A CN103400891A (en) | 2013-07-08 | 2013-07-08 | Preparation method of SiO2 passivation layer of back passivation battery |
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| CN2013102827739A CN103400891A (en) | 2013-07-08 | 2013-07-08 | Preparation method of SiO2 passivation layer of back passivation battery |
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| CN103400891A true CN103400891A (en) | 2013-11-20 |
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| CN2013102827739A Pending CN103400891A (en) | 2013-07-08 | 2013-07-08 | Preparation method of SiO2 passivation layer of back passivation battery |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105448760A (en) * | 2014-08-20 | 2016-03-30 | 中芯国际集成电路制造(上海)有限公司 | Method for improving test stability of wafer |
| CN107681018A (en) * | 2017-09-14 | 2018-02-09 | 横店集团东磁股份有限公司 | A kind of low-pressure oxidized technique of solar battery sheet |
| CN109004063A (en) * | 2018-07-06 | 2018-12-14 | 横店集团东磁股份有限公司 | A kind of thermal oxidation process of crystal silicon solar battery |
| CN110416363A (en) * | 2019-08-07 | 2019-11-05 | 山西潞安太阳能科技有限责任公司 | A kind of matching alkali throws the front passivation technology of selective emitter |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006025203A1 (en) * | 2004-08-31 | 2006-03-09 | Sharp Kabushiki Kaisha | Solar cell and method for manufacturing the same |
| CN102154708A (en) * | 2010-12-31 | 2011-08-17 | 常州天合光能有限公司 | Method for growing solar cell film |
| CN102544208A (en) * | 2011-12-28 | 2012-07-04 | 晶澳（扬州）太阳能科技有限公司 | High-temperature dry method double-side oxidizing process for crystal silicon wafer |
-
2013
- 2013-07-08 CN CN2013102827739A patent/CN103400891A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006025203A1 (en) * | 2004-08-31 | 2006-03-09 | Sharp Kabushiki Kaisha | Solar cell and method for manufacturing the same |
| CN102154708A (en) * | 2010-12-31 | 2011-08-17 | 常州天合光能有限公司 | Method for growing solar cell film |
| CN102544208A (en) * | 2011-12-28 | 2012-07-04 | 晶澳（扬州）太阳能科技有限公司 | High-temperature dry method double-side oxidizing process for crystal silicon wafer |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105448760A (en) * | 2014-08-20 | 2016-03-30 | 中芯国际集成电路制造(上海)有限公司 | Method for improving test stability of wafer |
| CN107681018A (en) * | 2017-09-14 | 2018-02-09 | 横店集团东磁股份有限公司 | A kind of low-pressure oxidized technique of solar battery sheet |
| CN109004063A (en) * | 2018-07-06 | 2018-12-14 | 横店集团东磁股份有限公司 | A kind of thermal oxidation process of crystal silicon solar battery |
| CN110416363A (en) * | 2019-08-07 | 2019-11-05 | 山西潞安太阳能科技有限责任公司 | A kind of matching alkali throws the front passivation technology of selective emitter |
| CN110416363B (en) * | 2019-08-07 | 2020-12-22 | 山西潞安太阳能科技有限责任公司 | Front passivation technology matched with alkali polishing selectivity emitter |
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Application publication date: 20131120 |