CN103400775B - First it is honored as a queen and loses three-dimensional systematic flip-chip bump packaging structure and process - Google Patents

First it is honored as a queen and loses three-dimensional systematic flip-chip bump packaging structure and process Download PDF

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Publication number
CN103400775B
CN103400775B CN201310340808.XA CN201310340808A CN103400775B CN 103400775 B CN103400775 B CN 103400775B CN 201310340808 A CN201310340808 A CN 201310340808A CN 103400775 B CN103400775 B CN 103400775B
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photoresistance film
basal board
metal basal
metal
board front
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CN103400775A (en
Inventor
梁志忠
梁新夫
林煜斌
张凯
章春燕
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Jiangsu Zunyang Electronic Technology Co ltd
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Jiangyin Xinzhilian Electronics Technology Co ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
    • H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector

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  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Abstract

The present invention relates to one be first honored as a queen erosion three-dimensional systematic flip-chip bump packaging structure and process, described encapsulating structure includes Ji Dao (1) and pin (2), described pin (2) front is provided with conductive posts (3), described Ji Dao (1) front is just equipped with the first chip (4), described conductive posts (3), the region of the first chip (4) and the first metal wire (5) periphery is all encapsulated with the first plastic packaging material or epoxy resin (9), described Ji Dao (1) and pin (2) back side upside-down mounting have the second chip (7), the region of described Ji Dao (1) and pin (2) rear surface regions and the second chip (7) periphery is all encapsulated with the second plastic packaging material or epoxy resin (10), the first metal ball (17) it is provided with in described conductive posts (3).One is first honored as a queen erosion three-dimensional systematic flip-chip bump packaging structure and process, and it can solve the problem that conventional metals lead frame or organic substrate cannot be imbedded object and limit whole encapsulation function integrated level and problem that tradition organic substrate needs more fine rule width and narrower line with distance between centers of tracks.

Description

First it is honored as a queen and loses three-dimensional systematic flip-chip bump packaging structure and process
Technical field
The present invention relates to one be first honored as a queen erosion three-dimensional systematic flip-chip bump packaging structure and process, belong to technical field of semiconductor encapsulation.
Background technology
Tradition four sides without pin die-attach area encapsulating structure as shown in Figure 102, its main processing technology be take sheet metal carry out chemical etching, metal plating thus be formed with carrying the Ji Dao of chip, the die-attach area of inside and outside pin, then carry out the load of one side, routing, the packaging technology such as encapsulating on this basis.
And traditional organic multilayer circuit base plate encapsulating structure is as shown in Figure 103, its main technique is that by the way of integral level set material amasss into, superposition forms multilayer circuit board on the basis of glass mat core material, perforate by the way of laser drill between line layer, then plated hole complete be electrically connected with.The packaging technologies such as the load of one side, routing, encapsulating are carried out the most again on the basis of multilayer circuit board.
Above-mentioned die-attach area encapsulating structure all has the disadvantage that with multilayer wiring board encapsulating structure
1, this type of die-attach area and multilayer wiring board all can only carry out the chip package of one side, and the utilization rate of die-attach area or multilayer wiring board is relatively low, thus limits the functional integration of whole encapsulation.
2, this type of die-attach area and multilayer wiring board itself do not imbed any object, so die-attach area and multilayer circuit board do not possess function integrated result, thus the most correspondingly limit the functional integration of whole packaging body.
3, material cost and the technique cost of manufacture of organic multilayer substrate are higher.
4, the live width line-spacing of conventional metals lead frame is considerably big, at least will be more than 200 μm, so highdensity demand cannot be accomplished.
The live width line-spacing of 5, traditional organic multilayer circuit makes ability according to current etching, can only achieve 25 μm live widths and 25 μm line-spacings, the widest.
Summary of the invention
It is an object of the invention to overcome above-mentioned deficiency, thering is provided one to be first honored as a queen erosion chip formal dress three-dimensional system level packaging structure and process, it can solve the problem that conventional metals lead frame or multilayer wiring board itself cannot be imbedded chip and passive component and limit whole encapsulation function integrated level and problem that tradition organic substrate needs more fine rule width and narrower line with distance between centers of tracks.
The object of the present invention is achieved like this: the process of a kind of erosion three-dimensional systematic flip-chip bump packaging structure of being first honored as a queen, and said method comprising the steps of:
Step one, take metal basal board
Step 2, metallic substrate surfaces preplating copper material
At one layer of copper material of metallic substrate surfaces preplating；
Step 3, patch photoresistance film operation
The metal basal board front of preplating copper material is completed and the back side is sticked respectively and can be exposed the photoresistance film of development in step 2；
Part photoresistance film is removed in step 4, metal basal board front
The metal basal board front utilizing exposure imaging equipment that step 3 completes to paste photoresistance film operation carries out graph exposure, develops and removes partial graphical photoresistance film, to expose the follow-up region needing to carry out metallic circuit layer plating, metal basal board front；
Step 5, plated metal line layer
Electroplating metallic circuit layer in the region of metal basal board front removal part photoresistance film in step 4, metallic circuit layer i.e. forms corresponding Ji Dao and pin in metal basal board front after having electroplated；
Step 6, patch photoresistance film operation
The photoresistance film that can be exposed developing is sticked in the metal basal board front completing plated metal line layer in step 5；
Part photoresistance film is removed in step 7, metal basal board front
The metal basal board front utilizing exposure imaging equipment that step 6 completes to paste photoresistance film operation carries out graph exposure, develops and removes partial graphical photoresistance film, to expose the follow-up region needing to carry out conductive posts plating, metal basal board front；
Step 8, plated conductive pillar
Conductive posts is electroplated in the region of metal basal board front removal part photoresistance film in step 7；
Step 9, removal photoresistance film
Remove the photoresistance film of metallic substrate surfaces；
Step 10, load
The implantation of the first chip is carried out in the base island front surface coated conduction that step 5 is formed or non-conductive bonding material；
Step 11, wire bond
Bond wire line operation is carried out between the pin that the first chip front side and step 5 are formed；
Step 12, epoxy resin plastic packaging
Metal basal board front after completing load routing carries out epoxy resin plastic packaging protection；
Step 13, epoxy resin surface grind
Surface grinding is carried out after step 12 completes epoxy resin plastic packaging；
Step 14, patch photoresistance film operation
Complete the metal basal board front and back after epoxy resin surface grinds in step 13 and stick the photoresistance film that can be exposed developing；
Part photoresistance film is removed at step 15, the metal basal board back side
The metal basal board back side that ginseng utilizes exposure imaging equipment that step 14 completes to paste photoresistance film operation carries out graph exposure, develops and removes partial graphical photoresistance film, to expose the region that the follow-up needs in the metal basal board back side are etched；
Step 10 six, etching
In step 15, the region of metal basal board back side removal part photoresistance film carries out chemical etching；
Step 10 seven, removal photoresistance film
Removing the photoresistance film of metallic substrate surfaces, the method removing photoresistance film uses chemical medicinal liquid soften and use high pressure water washing；
Step 10 eight, plating anti-oxidant metal layer or coating antioxidant
After removing photoresistance film in step 10 seven, the exposed metal surface of metallic substrate surfaces carries out anti-oxidant metal layer plating or antioxidant coating；
Step 10 nine, flip-chip
Completing to electroplate anti-oxidant metal layer or the Ji Dao of coating antioxidant and the pin back side carries out the second flip-chip by metal ball, the space between metal ball and metal ball and between chip and Ji Dao, pin can select underfill to be filled with.
Step 2 ten, epoxy resin plastic packaging
The metal basal board back side after completing load carries out epoxy resin plastic packaging protection；
Step 2 11, plant ball
The first metal ball is implanted at the conductive posts top completing to electroplate anti-oxidant metal layer or coating antioxidant in step 10 eight；
Step 2 12, cutting finished product
The semi-finished product that step 2 11 completes epoxy resin plastic packaging carry out cutting operation, the plastic-sealed body module more than making the metallic circuit substrate originally integrating in array aggregation mode and containing chip is cut independent, prepares erosion three-dimensional systematic chip formal dress encapsulating structure finished product of being first honored as a queen.
The process of a kind of erosion three-dimensional systematic flip-chip bump packaging structure of being first honored as a queen, said method comprising the steps of:
Step one, take metal basal board
Step 2, metallic substrate surfaces preplating copper material
At one layer of copper material of metallic substrate surfaces preplating,
Step 3, patch photoresistance film operation
The metal basal board front of preplating copper material is completed and the back side is sticked respectively and can be exposed the photoresistance film of development in step 2；
Part photoresistance film is removed in step 4, metal basal board front
The metal basal board front utilizing exposure imaging equipment that step 3 completes to paste photoresistance film operation carries out graph exposure, develops and removes partial graphical photoresistance film, to expose the follow-up region needing to carry out metallic circuit layer plating, metal basal board front；
Step 5, plated metal line layer
Electroplating metallic circuit layer in the region of metal basal board front removal part photoresistance film in step 4, metallic circuit layer i.e. forms corresponding Ji Dao and pin in metal basal board front after having electroplated；
Step 6, patch photoresistance film operation
The photoresistance film that can be exposed developing is sticked in the metal basal board front completing plated metal line layer in step 5；
Part photoresistance film is removed in step 7, metal basal board front
The metal basal board front utilizing exposure imaging equipment that step 6 completes to paste photoresistance film operation carries out graph exposure, develops and removes partial graphical photoresistance film, to expose the follow-up region needing to carry out conductive posts plating, metal basal board front；
Step 8, plated conductive pillar
Conductive posts is electroplated in the region of metal basal board front removal part photoresistance film in step 7；
Step 9, removal photoresistance film
Remove the photoresistance film of metallic substrate surfaces；
Step 10, load
The implantation of the first chip is carried out in the base island front surface coated conduction that step 5 is formed or non-conductive bonding material；
Step 11, wire bond
Bond wire line operation is carried out between the pin that the first chip front side and step 5 are formed；
Step 12, epoxy resin plastic packaging
Metal basal board front after completing load routing carries out epoxy resin plastic packaging protection；
Step 13, epoxy resin surface grind
Surface grinding is carried out after step 12 completes epoxy resin plastic packaging；
Step 14, patch photoresistance film operation
Complete the metal basal board front and back after epoxy resin surface grinds in step 13 and stick the photoresistance film that can be exposed developing；
Part photoresistance film is removed at step 15, the metal basal board back side
The metal basal board back side utilizing exposure imaging equipment that step 14 completes to paste photoresistance film operation carries out graph exposure, develops and removes partial graphical photoresistance film, to expose the region that the follow-up needs in the metal basal board back side are etched；
Step 10 six, etching
In step 15, the region of metal basal board back side removal part photoresistance film carries out chemical etching；
Step 10 seven, removal photoresistance film
Remove the photoresistance film of metallic substrate surfaces；
Step 10 eight, the green paint of metal basal board back side coating or can be photosensitive non-conductive glue material
The metal basal board back side after step 10 seven removes photoresistance film carry out green paint or can be photosensitive the coating of non-conductive glue material；
Step 10 nine, exposure are windowed development
Utilize exposure imaging equipment to the green paint of metal basal board back side coating or can be photosensitive non-conductive glue material be exposed development and window, to expose the follow-up region needing to carry out high-conductive metal layer plating, the metal basal board back side；
Step 2 ten, plating high-conductive metal layer
In step 10 nine the green paint in the metal basal board back side or can be photosensitive non-conductive glue material windowed regions in plating on high-conductive metal layer；
Step 2 11, plating anti-oxidant metal layer or coating antioxidant
Anti-oxidant metal layer plating or antioxidant coating is carried out in the exposed metal surface of metallic substrate surfaces；
Step 2 12, the chip that falls
In step 2 11 through the conductive posts top of plating anti-oxidant metal layer or coating antioxidant by the second chip in the second metal ball upside-down mounting, the space between metal ball and metal ball and between chip and conductive posts can be filled with underfill；
Step 2 13, epoxy resin plastic packaging
Epoxy resin surface after completing load carries out epoxy resin plastic packaging protection again；
Step 2 14, plant ball
Complete in step 2 11 to electroplate and implant the first metal ball on the high-conductive metal layer of anti-oxidant metal layer or coating antioxidant；
Step 2 15, cuts finished product
The semi-finished product that step 2 14 completes epoxy resin plastic packaging carry out cutting operation, the plastic-sealed body module more than making the metallic circuit substrate originally integrating in array aggregation mode and containing chip is cut independent, prepares erosion three-dimensional systematic chip formal dress encapsulating structure finished product of being first honored as a queen.
The process of a kind of erosion three-dimensional systematic flip-chip bump packaging structure of being first honored as a queen, said method comprising the steps of:
Step one, take metal basal board
Step 2, metallic substrate surfaces preplating copper material
At one layer of copper material of metallic substrate surfaces preplating；
Step 3, patch photoresistance film operation
The metal basal board front of preplating copper material is completed and the back side is sticked respectively and can be exposed the photoresistance film of development in step 2；
Part photoresistance film is removed in step 4, metal basal board front
The metal basal board front utilizing exposure imaging equipment that step 3 completes to paste photoresistance film operation carries out graph exposure, develops and removes partial graphical photoresistance film, to expose the follow-up region needing to carry out the first metallic circuit layer plating, metal basal board front；
Step 5, electroplate the first metallic circuit layer
The first metallic circuit layer is electroplated in the region of metal basal board front removal part photoresistance film in step 4；
Step 6, patch photoresistance film operation
The photoresistance film that can be exposed developing is sticked in the metal basal board front completing to electroplate the first metallic circuit layer in step 5；
Part photoresistance film is removed in step 7, metal basal board front
The metal basal board front utilizing exposure imaging equipment that step 6 completes to paste photoresistance film operation carries out graph exposure, develops and removes partial graphical photoresistance film, to expose the follow-up region needing to carry out the second metallic circuit layer plating, metal basal board front；
Step 8, electroplate the second metallic circuit layer
The second metallic circuit layer is electroplated as in order to connect the first metallic circuit layer and the conductive posts of the 3rd metallic circuit layer in the region of metal basal board front removal part photoresistance film in step 7；
Step 9, removal photoresistance film
Remove the photoresistance film of metallic substrate surfaces；
Step 10, the non-conductive glued membrane of pressing
At one layer of non-conductive glued membrane of metal basal board front pressing；
Step 11, grind non-conductive film surface
Surface grinding is carried out after step 10 completes non-conductive glued membrane pressing；
The metallization pretreatment of step 12, non-conductive film surface
Non-conductive film surface is carried out pretreatment of metallizing so that it is surface attachment last layer metallization macromolecular material or rough surfaceization process；
Step 13, patch photoresistance film operation
Metallized metal basal board front is completed and the back side is sticked and can be exposed the photoresistance film of development in step 12；
Part photoresistance film is removed in step 14, metal basal board front
The metal basal board front utilizing exposure imaging equipment that step 13 completes to paste photoresistance film operation carries out graph exposure, develops and removes partial graphical photoresistance film, to expose the regional graphics that the follow-up needs in metal basal board front are etched；
Step 15, etching
Region after metal basal board front photoresistance film in step 14 being windowed is etched operation；
Step 10 six, removal photoresistance film
Remove the photoresistance film of metallic substrate surfaces；
Step 10 seven, plating the 3rd metallic circuit layer
3rd metallic circuit layer in the metallization pretreatment zone plating retained after metal basal board front is etched in step 15, the 3rd metallic circuit layer i.e. forms corresponding Ji Dao and pin in metal basal board front after having electroplated；
Step 10 eight, patch photoresistance film operation
The photoresistance film that can be exposed developing is sticked in the metal basal board front completing to electroplate the 3rd metallic circuit layer in step 10 seven；
Part photoresistance film is removed in step 10 nine, metal basal board front
The metal basal board front utilizing exposure imaging equipment that step 10 eight completes to paste photoresistance film operation carries out graph exposure, develops and removes partial graphical photoresistance film, to expose the follow-up region needing to carry out conductive posts plating, metal basal board front；
Step 2 ten, plated conductive pillar
Conductive posts is electroplated in the region of metal basal board front removal part photoresistance film in step 10 nine；
Step 2 11, removal photoresistance film
Remove the photoresistance film of metallic substrate surfaces；
Step 2 12, load
The implantation of the first chip is carried out in the base island front surface coated conduction that step 10 seven is formed or non-conductive bonding material；
Step 2 13, wire bond
Bond wire line operation is carried out between the pin front that the first chip front side and step 5 are formed；
Step 2 14, epoxy resin plastic packaging
Metal basal board front after completing load routing carries out epoxy resin plastic packaging protection；
Step 2 15, epoxy resin surface grind
Surface grinding is carried out after step 2 14 completes epoxy resin plastic packaging；
Step 2 16, patch photoresistance film operation
Complete the metal basal board front and back after epoxy resin surface grinds in step 2 15 and stick the photoresistance film that can be exposed developing；
Part photoresistance film is removed at step 2 17, the metal basal board back side
The metal basal board back side utilizing exposure imaging equipment that step 2 16 completes to paste photoresistance film operation carries out graph exposure, develops and removes partial graphical photoresistance film, to expose the region that the follow-up needs in the metal basal board back side are etched；
Step 2 18, etching
In step 2 17, the region of metal basal board back side removal part photoresistance film carries out chemical etching；
Step 2 19, removal photoresistance film
Remove the photoresistance film of metallic substrate surfaces；
Step 3 ten, plating anti-oxidant metal layer or antioxidant coating
After removing photoresistance film in step 2 19, the exposed metal surface of metallic substrate surfaces carries out anti-oxidant metal layer plating or antioxidant coating；
Step 3 11, the chip that falls
Complete to electroplate anti-oxidant metal layer or the Ji Dao of coating antioxidant and the pin back side is filled up between metal ball and metal ball by underfill and space between chip and Ji Dao, chip carries out upside-down mounting the second chip in step 3 ten；
Step 3 12, epoxy resin plastic packaging
The metal basal board back side after completing load carries out epoxy resin plastic packaging protection；
Step 3 13, plant ball
The first metal ball is implanted at the conductive posts top completing to electroplate anti-oxidant metal layer or coating antioxidant in step 3 ten；
Step 3 14, cutting finished product
The semi-finished product that step 3 13 completes epoxy resin plastic packaging carry out cutting operation, the plastic-sealed body module more than making the metallic circuit substrate originally integrating in array aggregation mode and containing chip is cut independent, prepares erosion three-dimensional systematic chip formal dress encapsulating structure finished product of being first honored as a queen.
Described step 5 ~ step 10 seven repeats repeatedly between step 8 and step 10 eight.
nullOne is first honored as a queen and is lost three-dimensional systematic flip-chip bump packaging structure，It includes Ji Dao and pin，Described pin front is provided with conductive posts，Conduction or non-conductive bonding material are passed through just equipped with the first chip in described Ji Dao front，It is connected by the first metal wire between described first chip front side and pin front，Described Ji Dao and the region in pin front and conductive posts、The region of the first chip and the first metal wire periphery is all encapsulated with the first plastic packaging material or epoxy resin，Described first plastic packaging material or epoxy resin flush with conductive posts top，Described conductive posts exposes the surface configuration of the first plastic packaging material or epoxy resin anti oxidation layer，There is the second chip at described Ji Dao and the pin back side by underfill upside-down mounting，The region of described Ji Dao and pin rear surface regions and the second chip periphery is all encapsulated with the second plastic packaging material or epoxy resin，Described conductive posts top is provided with the first metal ball.
Described conductive posts can be with single-turn or multi-turn.
Between described pin and pin, bridging has passive device.
Described Ji Dao and the pin back side are filled up between metal ball and metal ball by underfill and space upside-down mounting between chip and Ji Dao, chip has multiple second chip.
Described second chip back by conduction or non-conductive bonding material just equipped with the 3rd chip, be connected by the second metal wire between described 3rd chip and the pin back side.
The described pin back side has the 3rd chip, described 3rd metal ball and the 3rd chip to be in the inside of the second plastic packaging material or epoxy resin by the 3rd metal ball upside-down mounting.
Described 3rd chip uses passive device to replace, and described 3rd metal ball and passive device are in the inside of the second plastic packaging material or epoxy resin.
nullOne is first honored as a queen and is lost three-dimensional systematic flip-chip bump packaging structure，It includes Ji Dao and pin，Described pin front is provided with conductive posts，Conduction or non-conductive bonding material are passed through just equipped with the first chip in described Ji Dao front，It is connected by the first metal wire between described first chip front side and pin front，Described Ji Dao and pin front surface region and conductive posts、First chip and the first metal wire outer peripheral areas are all encapsulated with the first plastic packaging material or epoxy resin，Described first plastic packaging material or epoxy resin flush with conductive posts top，There is the second chip at described conductive posts top by the second metal ball upside-down mounting，Described conductive posts top area and the second chip periphery region are all encapsulated with the second plastic packaging material or epoxy resin，Described Ji Dao and the pin back side are provided with high-conductive metal layer，Green paint or can photosensitive non-conductive glue material it is filled with between described high-conductive metal layer and high-conductive metal layer，Described high-conductive metal layer exposes green paint or the surface configuration of photosensitive non-conductive glue material can have anti oxidation layer，It is provided with the first metal ball on described high-conductive metal layer.
Compared with prior art, the method have the advantages that
1, metal current lead frame or organic multilayer circuit base plate all cannot imbed object, thus limit the functional integration of whole encapsulation.And the three-dimensional systematic metallic circuit substrate of the present invention, three-dimensional systematic metallic circuit substrate can in a substrate between interlayer in manufacturing process is imbedded object again, thus realize loading chip or other assemblies in the both sides of three-dimensional systematic metallic circuit substrate, thus improve the functional integration of whole encapsulation；
2, the interlayer in three-dimensional systematic metallic circuit substrate can imbed heat conduction or heat radiation object because heat conduction or heat radiation need in manufacturing process in the position needed or region, thus improves the radiating effect of whole encapsulating structure；
3, the interlayer in three-dimensional systematic metallic circuit substrate can imbed active member or assembly or passive assembly in manufacturing process in the position needed or region because of system and the needs of function, thus improves the utilization rate of substrate；
4, the outward appearance from three-dimensional systematic metallic circuit substrate package finished product be can't see the internal interlayer of substrate completely and imbedded the object needed because of system or function; the especially embedment X-ray of the chip of silicon material all cannot be inspected, and sufficiently achieves system and the confidentiality of function and protectiveness；
5, the systemic-function that three-dimensional systematic metallic circuit substrate package is integrated is many, thus the space that the component module of said function is shared by PCB is the most fewer, thus the most just reduces cost.
6, the interlayer of three-dimensional systematic metallic circuit substrate can imbed high-power component in manufacturing process, is attached separately to substrate both sides with control chip, such that it is able to avoid high-power component heat radiation and disturb the signal of control chip to transmit.
7, three-dimensional systematic metallic circuit substrate uses plating mode to make circuit, and live width line-spacing can reach below 15 μm.
8, three-dimensional systematic metallic circuit substrate uses plating, etching to make with plastic package process, and technique is simple, and cost is lower by about 30% than organic substrate.
Accompanying drawing explanation
Fig. 1 ~ Figure 22 is each operation schematic diagram of a kind of erosion core upside-down mounting three-dimensional systematic metal circuit board structural manufacturing process embodiment of the method 1 of being first honored as a queen of the present invention.
Figure 23 is the schematic diagram of a kind of erosion three-dimensional systematic flip-chip bump packaging structure embodiment 1 of being first honored as a queen of the present invention.
Figure 24 ~ Figure 48 is each operation schematic diagram of a kind of erosion three-dimensional systematic flip-chip bump packaging structure process embodiment 2 of being first honored as a queen of the present invention.
Figure 49 is the schematic diagram of a kind of erosion three-dimensional systematic flip-chip bump packaging structure embodiment 2 of being first honored as a queen of the present invention.
Figure 50 ~ Figure 95 is each operation schematic diagram of a kind of erosion three-dimensional systematic flip-chip bump packaging structure process embodiment 3 of being first honored as a queen of the present invention.
Figure 96 is the schematic diagram of a kind of erosion three-dimensional systematic flip-chip bump packaging structure embodiment 3 of being first honored as a queen of the present invention.
Figure 97 is the schematic diagram of a kind of erosion three-dimensional systematic flip-chip bump packaging structure embodiment 4 of being first honored as a queen of the present invention.
Figure 98 is the schematic diagram of a kind of erosion three-dimensional systematic flip-chip bump packaging structure embodiment 5 of being first honored as a queen of the present invention.
Figure 99 is the schematic diagram of a kind of erosion three-dimensional systematic flip-chip bump packaging structure embodiment 6 of being first honored as a queen of the present invention.
Figure 100 is the schematic diagram of a kind of erosion three-dimensional systematic flip-chip bump packaging structure embodiment 7 of being first honored as a queen of the present invention.
Figure 101 is the schematic diagram of a kind of erosion three-dimensional systematic flip-chip bump packaging structure embodiment 8 of being first honored as a queen of the present invention.
Figure 102 tradition four sides is without the schematic diagram of pin die-attach area encapsulating structure.
Figure 103 is the schematic diagram of traditional organic multilayer circuit base plate encapsulating structure.
Wherein:
Base island 1
Pin 2
Conductive posts 3
First chip 4
First metal wire 5
Conduction or non-conductive bonding material 6
Underfill 7
Second chip 8
First plastic packaging material or epoxy resin 9
Second plastic packaging material or epoxy resin 10
Anti oxidation layer 11
High-conductive metal layer 12
Green paint or can photosensitive non-conductive glue material 13
Passive device 14
3rd chip 15
Second metal wire 16
First metal ball 17
Second metal ball 18
3rd metal ball 19
Static release ring 20.
Detailed description of the invention
One of the present invention first be honored as a queen erosion three-dimensional systematic flip-chip bump packaging structure and process as follows:
Embodiment 1: monolayer circuit single-chip upside-down mounting individual pen pin (1)
nullSee Figure 23，One of the present invention is first honored as a queen and is lost three-dimensional systematic flip-chip bump packaging structure，It includes base island 1 and pin 2，Described pin 2 front is provided with conductive posts 3，Conduction or non-conductive bonding material 6 are passed through just equipped with the first chip 4 in front, described base island 1，It is connected by the first metal wire 5 between described first chip 4 front and pin 2 front，Described base island 1 and the region in pin 2 front and conductive posts 3、The region of the first chip 4 and the first metal wire 5 periphery is all encapsulated with the first plastic packaging material or epoxy resin 9，Described first plastic packaging material or epoxy resin 9 flush with conductive posts 3 top，The surface configuration that described conductive posts 3 exposes the first plastic packaging material or epoxy resin 9 has anti oxidation layer 11，There is the second chip 8 at described base island 1 and pin 2 back side by underfill 7 upside-down mounting，The region of described base island 1 and pin 2 rear surface regions and the second chip 8 periphery is all encapsulated with the second plastic packaging material or epoxy resin 10，Described conductive posts 3 top is provided with the first metal ball 17.
Its process is as follows:
Step one, take metal basal board
See Fig. 1, take the suitable metal basal board of a piece of thickness, the material of metal basal board can be metallics or the nonmetallic substance that copper material, iron material, zinc-plated material, stainless steel, aluminium maybe can reach conducting function, and the selection of thickness can select according to product attribute；
Step 2, metallic substrate surfaces preplating copper material
Seeing Fig. 2, at one layer of copper material of metallic substrate surfaces preplating, copper layer thickness is 2 ~ 10 microns, and needing according to function can also be thinning or thicken, and plating mode can be being in the way of electrolysis plating can also use chemical deposition；
Step 3, patch photoresistance film operation
See Fig. 3, complete the metal basal board front of preplating copper material and the back side is sticked respectively and can be exposed the photoresistance film of development in order to the making of subsequent metal line pattern in step 2, photoresistance film can be dry type photoresistance film can also be wet type photoresistance film；
Part photoresistance film is removed in step 4, metal basal board front
Seeing Fig. 4, the metal basal board front utilizing exposure imaging equipment that step 3 completes to paste photoresistance film operation carries out graph exposure, develops and removes partial graphical photoresistance film, to expose the follow-up region needing to carry out metallic circuit layer plating, metal basal board front；
Step 5, plated metal line layer
See Fig. 5, metallic circuit layer is electroplated in the region of metal basal board front removal part photoresistance film in step 4, metallic circuit layer i.e. forms corresponding Ji Dao and pin in metal basal board front after having electroplated, the material of metallic circuit layer can be copper, aluminum, nickel, silver, gold, copper silver, nickel gold or NiPdAu etc., metallic circuit layer thickness is 5 ~ 20 microns, different plating materials can be selected according to different application, according to different qualities conversion plating thickness, plating mode can by be electrolysis plating can also use chemical deposition in the way of；
Step 6, patch photoresistance film operation
See Fig. 6, complete the metal basal board front of plated metal line layer in step 5 and stick and can be exposed the photoresistance film of development, it is therefore an objective to for the making of subsequent conductive pillar, photoresistance film can be dry type photoresistance film can also be wet type photoresistance film；
Part photoresistance film is removed in step 7, metal basal board front
Seeing Fig. 7, the metal basal board front utilizing exposure imaging equipment that step 6 completes to paste photoresistance film operation carries out graph exposure, develops and removes partial graphical photoresistance film, to expose the follow-up region needing to carry out conductive posts plating, metal basal board front；
Step 8, plated conductive pillar
See Fig. 8, conductive posts is electroplated in the region of metal basal board front removal part photoresistance film in step 7, the material of conductive posts can be the material such as metallics that copper, aluminum, nickel, silver, gold, copper silver, nickel gold, NiPdAu maybe can reach conducting function, and plating mode can be being in the way of electrolysis plating can also use chemical deposition；
Step 9, removal photoresistance film
Seeing Fig. 9, remove the photoresistance film of metallic substrate surfaces, the method removing photoresistance film uses chemical medicinal liquid soften and use high pressure water washing；
Step 10, load
See Figure 10, carry out the implantation of the first chip in the base island front surface coated conduction that step 5 is formed or non-conductive bonding material；
Step 11, wire bond
See Figure 11, between the pin that chip front side and step 5 are formed, carry out bond wire line operation；
Step 12, epoxy resin plastic packaging
Seeing Figure 12, the metal basal board front after completing load routing carries out epoxy resin plastic packaging protection, and epoxide resin material can select according to product attribute to be had filler or do not have the kind of filler；
Step 13, epoxy resin surface grind
See Figure 13, after step 12 completes epoxy resin plastic packaging, carry out surface grinding；
Step 14, patch photoresistance film operation
See Figure 14, complete the metal basal board front and back after epoxy resin surface grinds in step 13 and stick the photoresistance film that can be exposed developing；
Part photoresistance film is removed at step 15, the metal basal board back side
Seeing Figure 15, the metal basal board back side utilizing exposure imaging equipment that step 14 completes to paste photoresistance film operation carries out graph exposure, develops and removes partial graphical photoresistance film, to expose the region that the follow-up needs in the metal basal board back side are etched；
Step 10 six, etching
Seeing Figure 16, in step 15, the region of metal basal board back side removal part photoresistance film carries out chemical etching, and the method for etching can use the etch process of copper chloride or iron chloride；
Step 10 seven, removal photoresistance film
Seeing Figure 17, remove the photoresistance film of metallic substrate surfaces, the method removing photoresistance film uses chemical medicinal liquid soften and use high pressure water washing；
Step 10 eight, plating anti-oxidant metal layer or coating antioxidant (OSP)
Seeing Figure 18, after removing photoresistance film in step 10 seven, the exposed metal surface of metallic substrate surfaces carries out anti-oxidant metal layer plating, such as gold, nickel gold, NiPdAu, stannum or coating antioxidant (OSP)；
Step 10 nine, the chip that falls
See Figure 19, complete to electroplate anti-oxidant metal layer or the Ji Dao of coating antioxidant and the pin back side is filled up between metal ball and metal ball by underfill and space upside-down mounting between chip and Ji Dao, base island has multiple second chip；
Step 2 ten, epoxy resin plastic packaging
Seeing Figure 20, the metal basal board back side after completing load carries out epoxy resin plastic packaging protection, and epoxide resin material can select according to product attribute to be had filler or do not have the kind of filler；
Step 2 11, plant ball
Seeing Figure 21, the first metal ball is implanted at the conductive posts top completing to electroplate anti-oxidant metal layer or coating antioxidant in step 10 eight；
Step 2 12, cutting finished product
See Figure 22, the semi-finished product that step 2 11 completes epoxy resin plastic packaging carry out cutting operation, make plastic-sealed body module more than cutting originally integrating in array aggregation mode and containing chip independent, prepare erosion three-dimensional systematic chip formal dress encapsulating structure finished product of being first honored as a queen.
Embodiment 2: monolayer circuit single-chip upside-down mounting individual pen pin (2)
nullSee Figure 49，One of the present invention is first honored as a queen and is lost three-dimensional systematic flip-chip bump packaging structure，It includes base island 1 and pin 2，Described pin 2 front is provided with conductive posts 3，Conduction or non-conductive bonding material 6 are passed through just equipped with the first chip 4 in front, described base island 1，It is connected by the first metal wire 5 between described first chip 4 front and pin 2 front，Described base island 1 and pin 2 front surface region and conductive posts 3、First chip 4 and the first metal wire 5 outer peripheral areas are all encapsulated with the first plastic packaging material or epoxy resin 9，Described first plastic packaging material or epoxy resin 9 flush with conductive posts 3 top，Described conductive posts 3 has the second chip 8 by the second metal ball 18 upside-down mounting，Described conductive posts 3 top area and the second chip 8 outer peripheral areas are all encapsulated with the second plastic packaging material or epoxy resin 10，Described base island 1 and pin 2 back side are provided with high-conductive metal layer 12，Green paint or can photosensitive non-conductive glue material 13 it is filled with between described high-conductive metal layer 12 and high-conductive metal layer 12，Described high-conductive metal layer 12 exposes green paint or the surface configuration of photosensitive non-conductive glue material 13 can have anti oxidation layer 11，The first metal ball 17 it is provided with on described high-conductive metal layer 12.
Embodiment 2 is with the difference of embodiment 1: in embodiment 2, conductive posts 3 uses really as interior pin, and plastic packaging process is carried out in metal basal board front；And conductive posts 3 uses really as outer pin in embodiment 1, plastic packaging process is carried out at the metal basal board back side.
Its process is as follows:
Step one, take metal basal board
Seeing Figure 24, take the suitable metal basal board of a piece of thickness, the material of metal basal board can be the metallics etc. that copper material, iron material, zinc-plated material, stainless steel or aluminium maybe can reach conducting function, and the selection of thickness can select according to product attribute；
Step 2, metallic substrate surfaces preplating copper material
Seeing Figure 25, at one layer of copper material of metallic substrate surfaces preplating, copper layer thickness is 2 ~ 10 microns, and needing according to function can also be thinning or thicken, and plating mode can be being in the way of electrolysis plating can also use chemical deposition；
Step 3, patch photoresistance film operation
See Figure 26, complete the metal basal board front of preplating copper material and the back side is sticked respectively and can be exposed the photoresistance film of development in order to the making of subsequent metal line pattern in step 2, photoresistance film can be dry type photoresistance film can also be wet type photoresistance film；
Part photoresistance film is removed in step 4, metal basal board front
Seeing Figure 27, the metal basal board front utilizing exposure imaging equipment that step 3 completes to paste photoresistance film operation carries out graph exposure, develops and removes partial graphical photoresistance film, to expose the follow-up region needing to carry out metallic circuit layer plating, metal basal board front；
Step 5, plated metal line layer
See Figure 28, metallic circuit layer is electroplated in the region of metal basal board front removal part photoresistance film in step 4, metallic circuit layer i.e. forms corresponding Ji Dao and pin in metal basal board front after having electroplated, the material of metallic circuit layer can be copper, aluminum, nickel, silver, gold, copper silver, nickel gold or NiPdAu maybe can reach the metallics etc. of conducting function, metallic circuit layer thickness is 5 ~ 20 microns, different plating materials can be selected according to different application, thickness according to different qualities conversion plating, plating mode can by be electrolysis plating can also use chemical deposition in the way of；
Step 6, patch photoresistance film operation
See Figure 29, complete the metal basal board front of plated metal line layer in step 5 and stick and can be exposed the photoresistance film of development, it is therefore an objective to for the making of subsequent conductive pillar, photoresistance film can be dry type photoresistance film can also be wet type photoresistance film；
Part photoresistance film is removed in step 7, metal basal board front
Seeing Figure 30, the metal basal board front utilizing exposure imaging equipment that step 6 completes to paste photoresistance film operation carries out graph exposure, develops and removes partial graphical photoresistance film, to expose the follow-up region needing to carry out conductive posts plating, metal basal board front；
Step 8, plated conductive pillar
See Figure 31, conductive posts is electroplated in the region of metal basal board front removal part photoresistance film in step 7, the material of conductive posts can be the material such as metallics that copper, aluminum, nickel, silver, gold, copper silver, nickel gold, NiPdAu maybe can reach conducting function, and plating mode can be being in the way of electrolysis plating can also use chemical deposition；
Step 9, removal photoresistance film
Seeing Figure 32, remove the photoresistance film of metallic substrate surfaces, the method removing photoresistance film uses chemical medicinal liquid soften and use high pressure water washing；
Step 10, load
See Figure 33, carry out the implantation of the first chip in the base island front surface coated conduction that step 5 is formed or non-conductive bonding material；
Step 11, wire bond
See Figure 34, between the pin front that the first chip front side and step 5 are formed, carry out bond wire line operation；
Step 12, epoxy resin plastic packaging
Seeing Figure 35, the metal basal board front after completing load routing carries out epoxy resin plastic packaging protection, and epoxide resin material can select according to product attribute to be had filler or do not have the kind of filler；
Step 13, epoxy resin surface grind
See Figure 36, after step 12 completes epoxy resin plastic packaging, carry out surface grinding；
Step 14, patch photoresistance film operation
See Figure 37, complete the metal basal board front and back after epoxy resin surface grinds in step 13 and stick the photoresistance film that can be exposed developing；
Part photoresistance film is removed at step 15, the metal basal board back side
Seeing Figure 38, the metal basal board back side utilizing exposure imaging equipment that step 14 completes to paste photoresistance film operation carries out graph exposure, develops and removes partial graphical photoresistance film, to expose the region that the follow-up needs in the metal basal board back side are etched；
Step 10 six, etching
Seeing Figure 39, in step 15, the region of metal basal board back side removal part photoresistance film carries out chemical etching, and the method for etching can use the etch process of copper chloride or iron chloride；
Step 10 seven, removal photoresistance film
Seeing Figure 40, remove the photoresistance film of metallic substrate surfaces, the method removing photoresistance film uses chemical medicinal liquid soften and use high pressure water washing；
Step 10 eight, the green paint of metal basal board back side coating or can be photosensitive non-conductive glue material
See Figure 41, the metal basal board back side after step 10 seven removes photoresistance film carry out green paint or can be photosensitive the coating of non-conductive glue material；
Step 10 nine, exposure are windowed development
See Figure 42, utilize exposure imaging equipment to the green paint of metal basal board back side coating or can be photosensitive non-conductive glue material be exposed development and window, to expose the follow-up region needing to carry out high-conductive metal layer plating, the metal basal board back side；
Step 2 ten, plating high-conductive metal layer
See Figure 43, in step 10 nine the green paint in the metal basal board back side or can be photosensitive non-conductive glue material windowed regions in plating on high-conductive metal layer, plating mode can by be electrolysis plating can also use chemical deposition in the way of；
Step 2 11, plating anti-oxidant metal layer or coating antioxidant (OSP)
See Figure 44, carry out anti-oxidant metal layer plating in the exposed metal surface of metallic substrate surfaces, such as gold, nickel gold, NiPdAu, stannum or coating antioxidant (OSP)；
Step 2 12, the chip that falls
See Figure 45, in step 2 11 through the conductive posts top of plating anti-oxidant metal layer or coating antioxidant by the second chip in the second metal ball upside-down mounting, the second beneath chips fallen can also inject underfill in order to fill up the space between metal ball and metal ball and between chip and plastic packaging material；
Step 2 13, epoxy resin plastic packaging
Seeing Figure 46, the epoxy resin surface after completing load carries out epoxy resin plastic packaging protection again, and epoxide resin material can select according to product attribute to be had filler or do not have the kind of filler；
Step 2 14, plant ball
See Figure 47, complete in step 2 11 to electroplate on the high-conductive metal layer of anti-oxidant metal layer or coating antioxidant and implant the first metal ball；
Step 2 15, cuts finished product
See Figure 48, the semi-finished product that step 2 14 completes epoxy resin plastic packaging carry out cutting operation, the plastic-sealed body module more than making the metallic circuit substrate originally integrating in array aggregation mode and containing chip is cut independent, prepares erosion three-dimensional systematic chip formal dress encapsulating structure finished product of being first honored as a queen.
Embodiment 3: multilayer line single-chip upside-down mounting individual pen pin
nullSee Figure 96，One of the present invention is first honored as a queen and is lost three-dimensional systematic flip-chip bump packaging structure，It includes base island 1 and pin 2，Described pin 2 front is provided with conductive posts 3，Conduction or non-conductive bonding material 6 are passed through just equipped with the first chip 4 in front, described base island 1，It is connected by the first metal wire 5 between described first chip 4 front and pin 2 front，Described base island 1 and the region in pin 2 front and conductive posts 3、The region of the first chip 4 and the first metal wire 5 periphery is all encapsulated with the first plastic packaging material or epoxy resin 9，Described first plastic packaging material or epoxy resin 9 flush with conductive posts 3 top，The surface configuration that described conductive posts 3 exposes the first plastic packaging material or epoxy resin 9 has anti oxidation layer 11，There is the second chip 8 at described base island 1 and pin 2 back side by underfill upside-down mounting，The region of described base island 1 and pin 2 rear surface regions and the second chip 8 periphery is all encapsulated with the second plastic packaging material or epoxy resin 10，Described conductive posts 3 top is provided with the first metal ball 17.
Embodiment 3 is with the difference of embodiment 1: described base island 1 and pin 2 are formed by multiple layer metal line layer, are connected by conductive posts between metallic circuit layer with metallic circuit layer.
Its process is as follows:
Step one, take metal basal board
See Figure 50, take the suitable metal basal board of a piece of thickness, the material of metal basal board can be metallics or the nonmetallic substance that copper material, iron material, zinc-plated material, stainless steel, aluminium maybe can reach conducting function, and the selection of thickness can select according to product attribute；
Step 2, metallic substrate surfaces preplating copper material
Seeing Figure 51, at one layer of copper material of metallic substrate surfaces preplating, copper layer thickness is 2 ~ 10 microns, and needing according to function can also be thinning or thicken, and plating mode can be being in the way of electrolysis plating can also use chemical deposition；
Step 3, patch photoresistance film operation
See Figure 52, complete the metal basal board front of preplating copper material and the back side is sticked respectively and can be exposed the photoresistance film of development in order to the making of subsequent metal line pattern in step 2, photoresistance film can be dry type photoresistance film can also be wet type photoresistance film；
Part photoresistance film is removed in step 4, metal basal board front
Seeing Figure 53, the metal basal board front utilizing exposure imaging equipment that step 3 completes to paste photoresistance film operation carries out graph exposure, develops and removes partial graphical photoresistance film, to expose the follow-up region needing to carry out the first metallic circuit layer plating, metal basal board front；
Step 5, electroplate the first metallic circuit layer
See Figure 54, the first metallic circuit layer is electroplated in the region of metal basal board front removal part photoresistance film in step 4, the material of the first metallic circuit layer can be copper, aluminum, nickel, silver, gold, copper silver, nickel gold or NiPdAu etc., and plating mode can be being in the way of electrolysis plating can also use chemical deposition；
Step 6, patch photoresistance film operation
See Figure 55, complete to electroplate the metal basal board front of the first metallic circuit layer in step 5 and stick and can be exposed the photoresistance film of development, it is therefore an objective to for the making of subsequent metal line pattern, photoresistance film can be dry type photoresistance film can also be wet type photoresistance film；
Part photoresistance film is removed in step 7, metal basal board front
Seeing Figure 56, the metal basal board front utilizing exposure imaging equipment that step 6 completes to paste photoresistance film operation carries out graph exposure, develops and removes partial graphical photoresistance film, to expose the follow-up region needing to carry out the second metallic circuit layer plating, metal basal board front；
Step 8, electroplate the second metallic circuit layer
See Figure 57, the second metallic circuit layer is electroplated as in order to connect the first metallic circuit layer and the conductive posts of the 3rd metallic circuit layer in the region of metal basal board front removal part photoresistance film in step 7, the material of the second metallic circuit layer can be the material such as metallics that copper, aluminum, nickel, silver, gold, copper silver, nickel gold, NiPdAu maybe can reach conducting function, and plating mode can be being in the way of electrolysis plating can also use chemical deposition；
Step 9, removal photoresistance film
Seeing Figure 58, remove the photoresistance film of metallic substrate surfaces, the method removing photoresistance film uses chemical medicinal liquid soften and use high pressure water washing；
Step 10, the non-conductive glued membrane of pressing
See Figure 59, at one layer of non-conductive glued membrane of metal basal board front (having the region of line layer) pressing, its objective is to be the first metallic circuit layer and the 3rd metallic circuit layer insulate；The mode of the non-conductive glued membrane of pressing can use the roll unit of routine, or carries out pressing under vacuum conditions, to prevent pressing process from producing the residual of air；Non-conductive glued membrane is mainly pressing formula thermosetting epoxy resin, and can could be used without filler according to product attribute or have the non-conductive glued membrane of filler in epoxy resin；
Step 11, grind non-conductive film surface
See Figure 60, after step 10 completes non-conductive glued membrane pressing, carry out surface grinding, it is therefore an objective to expose the second metallic circuit layer, maintain non-conductive glued membrane and the flatness of the second metallic circuit layer and control the thickness of non-conductive glued membrane；
The metallization pretreatment of step 12, non-conductive film surface
See Figure 61, non-conductive film surface is carried out pretreatment of metallizing, its surface attachment last layer metallization macromolecular material or rough surfaceization is made to process, purpose is the catalyst conversion that can plate as subsequent metal material, and adhesion metal macromolecular material can use the row again such as spraying, plasma concussion, surface coarsening to dry；
Step 13, patch photoresistance film operation
See Figure 62, complete metallized metal basal board front and the back side is sticked and can be exposed the photoresistance film of development in step 12, it is therefore an objective to for the making of subsequent metal line pattern, photoresistance film can be dry type photoresistance film can also be wet type photoresistance film；
Part photoresistance film is removed in step 14, metal basal board front
Seeing Figure 63, the metal basal board front utilizing exposure imaging equipment that step 13 completes to paste photoresistance film operation carries out graph exposure, develops and removes partial graphical photoresistance film, to expose the regional graphics that the follow-up needs in metal basal board front are etched；
Step 15, etching
See Figure 64, region after metal basal board front photoresistance film in step 14 being windowed is etched operation, its objective is to utilize the follow-up metallization pretreatment zone being made without electroplating the 3rd metallic circuit layer of corrosion technology erosion removal, the method being etched can be the technology mode of copper chloride or iron chloride；
Step 10 six, removal photoresistance film
Seeing Figure 65, remove the photoresistance film in metal basal board front, the method removing photoresistance film uses chemical medicinal liquid soften and use high pressure water washing；
Step 10 seven, plating the 3rd metallic circuit layer
See Figure 66,3rd metallic circuit layer in the metallization pretreatment zone plating retained after metal basal board front is etched in step 15, the material of the 3rd metallic circuit layer can be copper, aluminum, nickel, silver, gold, copper silver, nickel gold or NiPdAu etc., and plating mode can be being in the way of electrolysis plating can also use chemical deposition；
Step 10 eight, patch photoresistance film operation
See Figure 67, complete to electroplate the metal basal board front of the 3rd metallic circuit layer in step 10 eight and stick and can be exposed the photoresistance film of development, it is therefore an objective to for the making of subsequent metal line pattern, photoresistance film can be dry type photoresistance film can also be wet type photoresistance film；
Part photoresistance film is removed in step 10 nine, metal basal board front
Seeing Figure 68, the metal basal board front utilizing exposure imaging equipment that step 10 eight completes to paste photoresistance film operation carries out graph exposure, develops and removes partial graphical photoresistance film, to expose the follow-up region needing to carry out the 4th metallic circuit layer plating, metal basal board front；
Step 2 ten, plating the 4th metallic circuit layer
See Figure 69, the 4th metallic circuit layer is electroplated as the conductive posts in order to connect the 3rd metallic circuit layer and fifth metal line layer in the region of metal basal board front removal part photoresistance film in step 10 nine, the material of the 4th metallic circuit layer can be the material such as metallics that copper, aluminum, nickel, silver, gold, copper silver, nickel gold, NiPdAu maybe can reach conducting function, and plating mode can be being in the way of electrolysis plating can also use chemical deposition；
Step 2 11, removal photoresistance film
Seeing Figure 70, remove the photoresistance film in metal basal board front, the method removing photoresistance film uses chemical medicinal liquid soften and use high pressure water washing；
Step 2 12, the non-conductive glued membrane of pressing
See Figure 71, at one layer of non-conductive glued membrane of metal basal board front (having the region of line layer) pressing, its objective is to be that the 3rd metallic circuit layer insulate with fifth metal line layer；The mode of the non-conductive glued membrane of pressing can use the roll unit of routine, or carries out pressing under vacuum conditions, to prevent pressing process from producing the residual of air；Non-conductive glued membrane is mainly pressing formula thermosetting epoxy resin, and can could be used without filler according to product attribute or have the non-conductive glued membrane of filler in epoxy resin；
Step 2 13, grind non-conductive film surface
See Figure 72, after step 2 12 completes non-conductive glued membrane pressing, carry out surface grinding, it is therefore an objective to expose the 4th metallic circuit layer, maintain non-conductive glued membrane and the flatness of the 4th metallic circuit layer and control the thickness of non-conductive glued membrane；
The metallization pretreatment of step 2 14, non-conductive film surface
See Figure 73, non-conductive film surface is carried out pretreatment of metallizing, its surface attachment last layer metallization macromolecular material or rough surfaceization is made to process, purpose is the catalyst conversion that can plate as subsequent metal material, and adhesion metal macromolecular material can use the row again such as spraying, plasma concussion, surface coarsening to dry；
Step 2 15, patch photoresistance film operation
See Figure 74, complete metallized metal basal board front and the back side is sticked and can be exposed the photoresistance film of development in step 2 14, it is therefore an objective to for the making of subsequent metal line pattern, photoresistance film can be dry type photoresistance film can also be wet type photoresistance film；
Part photoresistance film is removed in step 2 16, metal basal board front
Seeing Figure 75, the metal basal board front utilizing exposure imaging equipment that step 2 15 completes to paste photoresistance film operation carries out graph exposure, develops and removes partial graphical photoresistance film, to expose the regional graphics that the follow-up needs in metal basal board front are etched；
Step 2 17, etching
See Figure 76, region after metal basal board front photoresistance film in step 2 16 being windowed is etched operation, its objective is to utilize the follow-up metallization pretreatment zone being made without electroplating fifth metal line layer of corrosion technology erosion removal, the method being etched can be the technology mode of copper chloride or iron chloride；
Step 2 18, removal photoresistance film
Seeing Figure 77, remove the photoresistance film of metallic substrate surfaces, the method removing photoresistance film uses chemical medicinal liquid soften and use high pressure water washing；
Step 2 19, plating fifth metal line layer
See Figure 78, fifth metal line layer in the metallization pretreatment zone plating retained after metal basal board front is etched in step 2 17, fifth metal line layer i.e. forms corresponding Ji Dao and pin in metal basal board front after having electroplated, the material of fifth metal line layer can be copper, aluminum, nickel, silver, gold, copper silver, nickel gold or NiPdAu etc., and plating mode can be being in the way of electrolysis plating can also use chemical deposition；
Step 3 ten, patch photoresistance film operation
See Figure 79, complete to electroplate the metal basal board front of fifth metal line layer in step 2 19 and stick and can be exposed the photoresistance film of development, it is therefore an objective to for the making of subsequent conductive pillar, photoresistance film can be dry type photoresistance film can also be wet type photoresistance film；
Part photoresistance film is removed in step 3 11, metal basal board front
Seeing Figure 80, the metal basal board front utilizing exposure imaging equipment that step 3 ten completes to paste photoresistance film operation carries out graph exposure, develops and removes partial graphical photoresistance film, to expose the follow-up region needing to carry out conductive posts plating, metal basal board front；
Step 3 12, plated conductive pillar
See Figure 81, conductive posts is electroplated in the region of metal basal board front removal part photoresistance film in step 3 11, the material of conductive posts can be the material such as metallics that copper, aluminum, nickel, silver, gold, copper silver, nickel gold, NiPdAu maybe can reach conducting function, and plating mode can be being in the way of electrolysis plating can also use chemical deposition；
Step 3 13, removal photoresistance film
Seeing Figure 82, remove the photoresistance film of metallic substrate surfaces, the method removing photoresistance film uses chemical medicinal liquid soften and use high pressure water washing；
Step 3 14, load
See Figure 83, carry out the implantation of the first chip in the base island front surface coated conduction that step 2 19 is formed or non-conductive bonding material；
Step 3 15, wire bond
See Figure 84, between the pin front that the first chip front side and step 5 are formed, carry out bond wire line operation；
Step 3 16, epoxy resin plastic packaging
Seeing Figure 85, the metal basal board front after completing load routing carries out epoxy resin plastic packaging protection, and epoxide resin material can select according to product attribute to be had filler or do not have the kind of filler；
Step 3 17, epoxy resin surface grind
See Figure 86, after step 3 16 completes epoxy resin plastic packaging, carry out surface grinding；
Step 3 18, patch photoresistance film operation
See Figure 87, complete the metal basal board front and back after epoxy resin surface grinds in step 3 17 and stick the photoresistance film that can be exposed developing；
Part photoresistance film is removed at step 3 19, the metal basal board back side
Seeing Figure 88, the metal basal board back side utilizing exposure imaging equipment that step 3 18 completes to paste photoresistance film operation carries out graph exposure, develops and removes partial graphical photoresistance film, to expose the region that the follow-up needs in the metal basal board back side are etched；
Step 4 ten, etching
Seeing Figure 89, in step 3 19, the region of metal basal board back side removal part photoresistance film carries out chemical etching, and the method for etching can use the etch process of copper chloride or iron chloride；
Step 4 11, removal photoresistance film
Seeing Figure 90, remove the photoresistance film of metallic substrate surfaces, the method removing photoresistance film uses chemical medicinal liquid soften and use high pressure water washing；
Step 4 12, plating anti-oxidant metal layer or coating antioxidant (OSP)
Seeing Figure 91, after removing photoresistance film in step 4 11, the exposed metal surface of metallic substrate surfaces carries out anti-oxidant metal layer plating, such as gold, nickel gold, NiPdAu, stannum or coating antioxidant (OSP)；
Step 4 13, the chip that falls
See Figure 92, complete to electroplate anti-oxidant metal layer or the Ji Dao of coating antioxidant and the pin back side is filled up between metal ball and metal ball by underfill and the second chip in space upside-down mounting between chip and Ji Dao, pin in step 4 12；
Step 4 14, epoxy resin plastic packaging
Seeing Figure 93, the metal basal board back side after completing load carries out epoxy resin plastic packaging protection, and epoxide resin material can select according to product attribute to be had filler or do not have the kind of filler；
Step 4 15, plant ball
Seeing Figure 94, the first metal ball is implanted at the conductive posts top completing to electroplate anti-oxidant metal layer or coating antioxidant in step 4 12；
Step 4 16, cutting finished product
See Figure 95, the semi-finished product that step 4 13 completes epoxy resin plastic packaging carry out cutting operation, the plastic-sealed body module more than making the metallic circuit substrate originally integrating in array aggregation mode and containing chip is cut independent, prepares erosion three-dimensional systematic chip formal dress encapsulating structure finished product of being first honored as a queen.
Embodiment 4: single-chip formal dress individual pen pin+passive device
Seeing Figure 97, the difference of embodiment 4 and embodiment 1 is: between described pin 2 back side and pin 2 back side, bridging has passive device 14.
Embodiment 5: multi-chip tiles
Seeing Figure 98, embodiment 5 is with the difference of embodiment 1: there is multiple second chip 8 at described base island 1 and pin 2 back side by underfill 7 upside-down mounting.
Embodiment 6: multi-chip stacking falls formal dress
Seeing Figure 99, embodiment 6 is with the difference of embodiment 1: described second chip 8 back side, is connected by the second metal wire 16 between described 3rd chip 15 and pin 2 back side just equipped with the 3rd chip 15 by conduction or non-conductive bonding material 6.
Embodiment 7: multi-chip stacking upside-down mounting
Seeing Figure 100, embodiment 7 is with the difference of embodiment 1: described pin 2 back side has the 3rd chip 15, described 3rd metal ball 19 and the 3rd chip 15 to be in the second plastic packaging material or the inside of epoxy resin 10 by the 3rd metal ball 19 upside-down mounting.
Described 3rd chip 15 can use passive device 14 to replace, and described 3rd metal ball 19 and passive device 14 are in the second plastic packaging material or the inside of epoxy resin 10.
Embodiment 8: single-chip upside-down mounting multi-circle pin+passive device+static release ring
See Figure 101, embodiment 8 is with the difference of embodiment 1: described pin 2 has multi-turn, being provided with conductive posts 3 on described multi-circle pin 2, be provided with static release ring 20 between described base island 1 and pin 2, between described pin 2 back side and pin 2 back side, bridging has passive device 14.

Claims (3)

1. the process of an erosion three-dimensional systematic flip-chip bump packaging structure of being first honored as a queen, it is characterised in that said method comprising the steps of:
Step one, take metal basal board
Step 2, metallic substrate surfaces preplating copper material
At one layer of copper material of metallic substrate surfaces preplating；
Step 3, patch photoresistance film operation
The metal basal board front of preplating copper material is completed and the back side is sticked respectively and can be exposed the photoresistance film of development in step 2；
Part photoresistance film is removed in step 4, metal basal board front
The metal basal board front utilizing exposure imaging equipment that step 3 completes to paste photoresistance film operation carries out graph exposure, develops and removes partial graphical photoresistance film, to expose the follow-up region needing to carry out metallic circuit layer plating, metal basal board front；
Step 5, plated metal line layer
Electroplating metallic circuit layer in the region of metal basal board front removal part photoresistance film in step 4, metallic circuit layer i.e. forms corresponding Ji Dao and pin in metal basal board front after having electroplated；
Step 6, patch photoresistance film operation
The photoresistance film that can be exposed developing is sticked in the metal basal board front completing plated metal line layer in step 5；
Part photoresistance film is removed in step 7, metal basal board front
The metal basal board front utilizing exposure imaging equipment that step 6 completes to paste photoresistance film operation carries out graph exposure, develops and removes partial graphical photoresistance film, to expose the follow-up region needing to carry out conductive posts plating, metal basal board front；
Step 8, plated conductive pillar
Conductive posts is electroplated in the region of metal basal board front removal part photoresistance film in step 7；
Step 9, removal photoresistance film
Remove the photoresistance film of metallic substrate surfaces；
Step 10, load
The implantation of the first chip is carried out in the base island front surface coated conduction that step 5 is formed or non-conductive bonding material；
Step 11, wire bond
Bond wire line operation is carried out between the pin that the first chip front side and step 5 are formed；
Step 12, epoxy resin plastic packaging
Metal basal board front after completing load routing carries out epoxy resin plastic packaging protection；
Step 13, epoxy resin surface grind
Surface grinding is carried out after step 12 completes epoxy resin plastic packaging；
Step 14, patch photoresistance film operation
Complete the metal basal board front and back after epoxy resin surface grinds in step 13 and stick the photoresistance film that can be exposed developing；
Part photoresistance film is removed at step 15, the metal basal board back side
The metal basal board back side utilizing exposure imaging equipment that step 14 completes to paste photoresistance film operation carries out graph exposure, develops and removes partial graphical photoresistance film, to expose the region that the follow-up needs in the metal basal board back side are etched；
Step 10 six, etching
In step 15, the region of metal basal board back side removal part photoresistance film carries out chemical etching；
Step 10 seven, removal photoresistance film
Removing the photoresistance film of metallic substrate surfaces, the method removing photoresistance film uses chemical medicinal liquid soften and use high pressure water washing；
Step 10 eight, coating antioxidant
After removing photoresistance film in step 10 seven, the exposed metal surface of metallic substrate surfaces carries out antioxidant coating；
Step 10 nine, the chip that falls
Complete to electroplate anti-oxidant metal layer or the Ji Dao of coating antioxidant and the pin back side is filled up between metal ball and metal ball by underfill and space upside-down mounting between chip and Ji Dao, pin has upside-down mounting to have the second chip；
Step 2 ten, epoxy resin plastic packaging
The metal basal board back side after completing load carries out epoxy resin plastic packaging protection；
Step 2 11, plant ball
The first metal ball is implanted at the conductive posts top completing to electroplate anti-oxidant metal layer or coating antioxidant in step 10 eight；
Step 2 12, cutting finished product
The semi-finished product that step 2 11 completes epoxy resin plastic packaging carry out cutting operation, the plastic-sealed body module more than making the metallic circuit substrate originally integrating in array aggregation mode and containing chip is cut independent, prepares erosion three-dimensional systematic chip formal dress encapsulating structure finished product of being first honored as a queen.
2. the process of an erosion three-dimensional systematic flip-chip bump packaging structure of being first honored as a queen, it is characterised in that said method comprising the steps of:
Step one, take metal basal board
Step 2, metallic substrate surfaces preplating copper material
At one layer of copper material of metallic substrate surfaces preplating；
Step 3, patch photoresistance film operation
The metal basal board front of preplating copper material is completed and the back side is sticked respectively and can be exposed the photoresistance film of development in step 2；
Part photoresistance film is removed in step 4, metal basal board front
The metal basal board front utilizing exposure imaging equipment that step 3 completes to paste photoresistance film operation carries out graph exposure, develops and removes partial graphical photoresistance film, to expose the follow-up region needing to carry out the first metallic circuit layer plating, metal basal board front；
Step 5, electroplate the first metallic circuit layer
The first metallic circuit layer is electroplated in the region of metal basal board front removal part photoresistance film in step 4；
Step 6, patch photoresistance film operation
The photoresistance film that can be exposed developing is sticked in the metal basal board front completing to electroplate the first metallic circuit layer in step 5；
Part photoresistance film is removed in step 7, metal basal board front
The metal basal board front utilizing exposure imaging equipment that step 6 completes to paste photoresistance film operation carries out graph exposure, develops and removes partial graphical photoresistance film, to expose the follow-up region needing to carry out the second metallic circuit layer plating, metal basal board front；
Step 8, electroplate the second metallic circuit layer
The second metallic circuit layer is electroplated as in order to connect the first metallic circuit layer and the conductive posts of the 3rd metallic circuit layer in the region of metal basal board front removal part photoresistance film in step 7；
Step 9, removal photoresistance film
Remove the photoresistance film of metallic substrate surfaces；
Step 10, the non-conductive glued membrane of pressing
At one layer of non-conductive glued membrane of metal basal board front pressing；
Step 11, grind non-conductive film surface
Surface grinding is carried out after step 10 completes non-conductive glued membrane pressing；
Step 12, non-conductive film surface carry out metallize pretreatment or roughening process
Non-conductive film surface is carried out pretreatment of metallizing so that it is surface attachment last layer metallization macromolecular material or be roughened；
Step 13, patch photoresistance film operation
The photoresistance film that can be exposed development is sticked at metal basal board front and the back side after step 12 completes metallization pretreatment or roughening processes；
Part photoresistance film is removed in step 14, metal basal board front
The metal basal board front utilizing exposure imaging equipment that step 13 completes to paste photoresistance film operation carries out graph exposure, develops and removes partial graphical photoresistance film, to expose the regional graphics that the follow-up needs in metal basal board front are etched；
Step 15, etching
Region after metal basal board front photoresistance film in step 14 being windowed is etched operation；
Step 10 six, removal photoresistance film
Remove the photoresistance film of metallic substrate surfaces；
Step 10 seven, plating the 3rd metallic circuit layer
3rd metallic circuit layer in the metallization pretreatment zone plating retained after metal basal board front is etched in step 15, the 3rd metallic circuit layer i.e. forms corresponding Ji Dao and pin in metal basal board front after having electroplated；
Step 10 eight, patch photoresistance film operation
The photoresistance film that can be exposed developing is sticked in the metal basal board front completing to electroplate the 3rd metallic circuit layer in step 10 seven；
Part photoresistance film is removed in step 10 nine, metal basal board front
The metal basal board front utilizing exposure imaging equipment that step 10 eight completes to paste photoresistance film operation carries out graph exposure, develops and removes partial graphical photoresistance film, to expose the follow-up region needing to carry out conductive posts plating, metal basal board front；
Step 2 ten, plated conductive pillar
Conductive posts is electroplated in the region of metal basal board front removal part photoresistance film in step 10 nine；
Step 2 11, removal photoresistance film
Remove the photoresistance film of metallic substrate surfaces；
Step 2 12, load
The implantation of the first chip is carried out in the base island front surface coated conduction that step 10 seven is formed or non-conductive bonding material；
Step 2 13, wire bond
Bond wire line operation is carried out between the pin that the first chip front side and step 5 are formed；
Step 2 14, epoxy resin plastic packaging
Metal basal board front after completing load routing carries out epoxy resin plastic packaging protection；
Step 2 15, epoxy resin surface grind
Surface grinding is carried out after step 2 14 completes epoxy resin plastic packaging；
Step 2 16, patch photoresistance film operation
Complete the metal basal board front and back after epoxy resin surface grinds in step 2 15 and stick the photoresistance film that can be exposed developing；
Part photoresistance film is removed at step 2 17, the metal basal board back side
The metal basal board back side utilizing exposure imaging equipment that step 2 16 completes to paste photoresistance film operation carries out graph exposure, develops and removes partial graphical photoresistance film, to expose the region that the follow-up needs in the metal basal board back side are etched；
Step 2 18, etching
In step 2 17, the region of metal basal board back side removal part photoresistance film carries out chemical etching；
Step 2 19, removal photoresistance film
Remove the photoresistance film of metallic substrate surfaces；
Step 3 ten, antioxidant coating
After removing photoresistance film in step 2 19, the exposed metal surface of metallic substrate surfaces carries out antioxidant coating；
Step 3 11, the chip that falls
Electroplate anti-oxidant metal layer or the Ji Dao of coating antioxidant and the pin back side fill up between metal ball and metal ball by underfill and space upside-down mounting between chip and Ji Dao, pin has the second chip completing step 3 ten；
Step 3 12, epoxy resin plastic packaging
The metal basal board back side after completing load carries out epoxy resin plastic packaging protection；
Step 3 13, plant ball
The first metal ball is implanted at the conductive posts top completing to electroplate anti-oxidant metal layer or coating antioxidant in step 3 ten；
Step 3 14, cutting finished product
The semi-finished product that step 3 13 completes epoxy resin plastic packaging carry out cutting operation, the plastic-sealed body module more than making the metallic circuit substrate originally integrating in array aggregation mode and containing chip is cut independent, prepares erosion three-dimensional systematic chip formal dress encapsulating structure finished product of being first honored as a queen.
The process of a kind of erosion three-dimensional systematic flip-chip bump packaging structure of being first honored as a queen the most according to claim 2, it is characterised in that: described step 5 ~ step 10 seven repeats repeatedly between step 8 and step 10 eight.
CN201310340808.XA 2013-08-06 2013-08-06 First it is honored as a queen and loses three-dimensional systematic flip-chip bump packaging structure and process Active CN103400775B (en)

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CN103489792B (en) * 2013-08-06 2016-02-03 江苏长电科技股份有限公司 First be honored as a queen and lose three-dimensional systematic flip chip encapsulation structure and process
TWI591762B (en) * 2014-06-30 2017-07-11 恆勁科技股份有限公司 Package apparatus and manufacturing method thereof
CN104600056B (en) * 2014-12-30 2018-11-02 华天科技（西安）有限公司 A kind of multi-chip three-dimensional hybrid encapsulating structure and preparation method thereof
CN107919333B (en) * 2017-12-28 2023-08-29 江阴长电先进封装有限公司 Three-dimensional POP packaging structure and packaging method thereof

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