CN103400775A - Packaging-prior-to-etching type three-dimensional system-level chip-flipped bump packaging structure and process method thereof - Google Patents

Packaging-prior-to-etching type three-dimensional system-level chip-flipped bump packaging structure and process method thereof Download PDF

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Publication number
CN103400775A
CN103400775A CN201310340808XA CN201310340808A CN103400775A CN 103400775 A CN103400775 A CN 103400775A CN 201310340808X A CN201310340808X A CN 201310340808XA CN 201310340808 A CN201310340808 A CN 201310340808A CN 103400775 A CN103400775 A CN 103400775A
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Prior art keywords
photoresistance film
metal
metal substrate
chip
carry out
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CN201310340808XA
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CN103400775B (en
Inventor
梁志忠
梁新夫
林煜斌
张凯
章春燕
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Jiangsu Zunyang Electronic Technology Co ltd
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Jiangsu Changjiang Electronics Technology Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
    • H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector

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  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Abstract

The invention relates to a packaging-prior-to-etching type three-dimensional system-level chip-flipped bump packaging structure and a process method thereof. The packaging structure comprises a pad (1) and pins (2), wherein conductive columns (3) are arranged on the front surfaces of the pins (2); a first chip (4) is normally bonded on the front surface of the pad (1); first molding compounds or epoxy resins (9) are encapsulated in the peripheral areas of the conductive columns (3), the first chip (4) and a first metal wire (5); second chips (7) are flipped on the back surfaces of the pad (1) and the pins (2); second molding compounds or epoxy resins (10) are encapsulated in the back areas of the pad (1) and the pins (2) and the peripheral areas of the second chips (7); and first metal balls (17) are arranged on the conductive columns (3). By virtue of the packaging-prior-to-etching type three-dimensional system-level chip-flipped bump packaging structure and the process method thereof, the problems of limitation of the whole packaging functional integrity caused by difficulty in embedding of an object into a conventional metal lead frame or a conventional organic substrate and requirements on smaller wire width and smaller wire interval of the conventional organic substrate can be solved.

Description

First be honored as a queen and lose three-dimensional systematic flip-chip bump packaging structure and process
Technical field
The present invention relates to a kind of erosion three-dimensional systematic flip-chip bump packaging structure and process of first being honored as a queen, belong to the semiconductor packaging field.
Background technology
Tradition four sides without pin die-attach area encapsulating structure as shown in Figure 102, its main manufacture craft is that sheet metal carries out chemical etching, thereby metal plating is made the Ji Dao of carries chips, the die-attach area of inside and outside pin getting, then carries out one-sided load, routing on this basis, the packaging technology such as seals.
And traditional organic multilayer circuit base plate encapsulating structure is as shown in Figure 103, its main technique is by amassing into mode that material the amasss formation multilayer circuit board that superposes on the basis of glass mat core material, pass through the mode perforate of laser drill between line layer, then plate hole and complete electric connection.And then carry out one-sided load, routing on the basis of multilayer circuit board, the packaging technology such as seal.
Above-mentioned die-attach area encapsulating structure and multilayer wiring board encapsulating structure all have the following disadvantages:
1, this type of die-attach area and multilayer wiring board all can only carry out one-sided chip package, and the utilance of die-attach area or multilayer wiring board is lower, thereby limit the functional integration of whole encapsulation.
2, this type of die-attach area and multilayer wiring board itself do not imbedded any object, so die-attach area and multilayer circuit board do not possess the function integrated result, thereby correspondingly limited the functional integration of whole packaging body yet.
3, the material cost of organic multilayer substrate and technique cost of manufacture are higher.
4, the live width line-spacing of traditional metal lead frame is considerably large, more than at least all wanting 200 μ m, so can't accomplish highdensity demand.
5, the live width line-spacing of traditional organic multilayer circuit is made ability according to present etching, can only reach 25 μ m live widths and 25 μ m line-spacings, and is a bit wide a little.
Summary of the invention
The object of the invention is to overcome above-mentioned deficiency, a kind of erosion chip formal dress three-dimensional system level packaging structure and process of first being honored as a queen is provided, and it can solve traditional metal lead frame or multilayer wiring board itself and can't imbed chip and passive component and limit whole encapsulation function integrated level and traditional organic substrate and need wide Yu the narrower line of fine rule more and the problem of distance between centers of tracks.
The object of the present invention is achieved like this: a kind of process of the erosion three-dimensional systematic flip-chip bump packaging structure of first being honored as a queen said method comprising the steps of:
Step 1, get metal substrate
Step 2, metallic substrate surfaces preplating copper material
At metallic substrate surfaces preplating one deck copper material;
Step 3, the operation of subsides photoresistance film
Complete metal substrate front and the back side of preplating copper material in step 2 and stick respectively the photoresistance film that can carry out exposure imaging;
Step 4, the positive part photoresistance film of removing of metal substrate
Utilize exposure imaging equipment that step 3 is completed the metal substrate front of pasting the operation of photoresistance film and carry out graph exposure, develop and remove part figure photoresistance film, to expose the positive follow-up needs of metal substrate, carry out the zone that the metallic circuit layer is electroplated;
Step 5, plated metal line layer
Electroplate the metallic circuit layer in the positive zone of removing part photoresistance film of metal substrate in step 4, after the metallic circuit layer is electroplated and is completed namely at the metal substrate corresponding Ji Dao of positive formation and pin;
Step 6, the operation of subsides photoresistance film
Complete the metal substrate front of plated metal line layer in step 5 and stick the photoresistance film that can carry out exposure imaging;
Step 7, the positive part photoresistance film of removing of metal substrate
Utilize exposure imaging equipment that step 6 is completed the metal substrate front of pasting the operation of photoresistance film and carry out graph exposure, develop and remove part figure photoresistance film, to expose the positive follow-up needs of metal substrate, carry out the zone that conductive posts is electroplated;
Step 8, plated conductive pillar
Electroplate conductive posts in the zone of the positive removal of metal substrate part photoresistance film in step 7;
Step 9, removal photoresistance film
Remove the photoresistance film of metallic substrate surfaces;
Step 10, load
Carry out the implantation of the first chip at basic island front surface coated conduction or non-conductive bonding material that step 5 forms;
Step 11, metal wire bonding
Carry out the operation of bonding metal wire between the pin of the first chip front side and step 5 formation;
Step 12, epoxy resin plastic packaging
The protection of epoxy resin plastic packaging is carried out in metal substrate front after completing the load routing;
Step 13, epoxy resin surface grind
After completing the epoxy resin plastic packaging, step 12 carries out surface grinding;
Step 14, the operation of subsides photoresistance film
The metal substrate front and back of completing after epoxy resin surface grinds in step 13 sticks the photoresistance film that can carry out exposure imaging;
Part photoresistance film is removed at step 15, the metal substrate back side
Part figure photoresistance film is carried out graph exposure, develops and removes at the metal substrate back side that ginseng utilizes exposure imaging equipment that step 14 is completed the operation of subsides photoresistance film, to expose the follow-up needs in the metal substrate back side, carries out etched zone;
Step 10 six, etching
Chemical etching is carried out in the zone of metal substrate back side removal part photoresistance film in step 15;
Step 10 seven, removal photoresistance film
Remove the photoresistance film of metallic substrate surfaces, the method for removing the photoresistance film adopts chemical medicinal liquid soften and adopt high pressure water washing to get final product;
Step 10 eight, plating anti-oxidant metal layer or coating antioxidant
Remove the photoresistance film in step 10 seven after, anti-oxidant metal layer plating or antioxidant coating are carried out in the exposed metal surface of metallic substrate surfaces;
Step 10 nine, flip-chip
Carry out the second flip-chip by Metal Ball completing Ji Dao and the pin back side of electroplating anti-oxidant metal layer or coating antioxidant, between Metal Ball and Metal Ball and the space between chip and Ji Dao, pin can select underfill to fill.
Step 2 ten, epoxy resin plastic packaging
The protection of epoxy resin plastic packaging is carried out at the metal substrate back side after completing load;
Step 2 11, plant ball
Complete the conductive posts top of electroplating anti-oxidant metal layer or coating antioxidant in step 10 eight and implant the first Metal Ball;
Step 2 12, cutting finished product
The semi-finished product of step 2 11 being completed the epoxy resin plastic packaging carry out cutting operation, make originally in array aggregate mode, to integrate and to contain more than cuttings of plastic-sealed body module of metallic circuit substrate of chip independent, making first is honored as a queen loses three-dimensional systematic chip formal dress encapsulating structure finished product.
A kind of process of the erosion three-dimensional systematic flip-chip bump packaging structure of first being honored as a queen said method comprising the steps of:
Step 1, get metal substrate
Step 2, metallic substrate surfaces preplating copper material
At metallic substrate surfaces preplating one deck copper material,
Step 3, the operation of subsides photoresistance film
Complete metal substrate front and the back side of preplating copper material in step 2 and stick respectively the photoresistance film that can carry out exposure imaging;
Step 4, the positive part photoresistance film of removing of metal substrate
Utilize exposure imaging equipment that step 3 is completed the metal substrate front of pasting the operation of photoresistance film and carry out graph exposure, develop and remove part figure photoresistance film, to expose the positive follow-up needs of metal substrate, carry out the zone that the metallic circuit layer is electroplated;
Step 5, plated metal line layer
Electroplate the metallic circuit layer in the positive zone of removing part photoresistance film of metal substrate in step 4, after the metallic circuit layer is electroplated and is completed namely at the metal substrate corresponding Ji Dao of positive formation and pin;
Step 6, the operation of subsides photoresistance film
Complete the metal substrate front of plated metal line layer in step 5 and stick the photoresistance film that can carry out exposure imaging;
Step 7, the positive part photoresistance film of removing of metal substrate
Utilize exposure imaging equipment that step 6 is completed the metal substrate front of pasting the operation of photoresistance film and carry out graph exposure, develop and remove part figure photoresistance film, to expose the positive follow-up needs of metal substrate, carry out the zone that conductive posts is electroplated;
Step 8, plated conductive pillar
Electroplate conductive posts in the zone of the positive removal of metal substrate part photoresistance film in step 7;
Step 9, removal photoresistance film
Remove the photoresistance film of metallic substrate surfaces;
Step 10, load
Carry out the implantation of the first chip at basic island front surface coated conduction or non-conductive bonding material that step 5 forms;
Step 11, metal wire bonding
Carry out the operation of bonding metal wire between the pin of the first chip front side and step 5 formation;
Step 12, epoxy resin plastic packaging
The protection of epoxy resin plastic packaging is carried out in metal substrate front after completing the load routing;
Step 13, epoxy resin surface grind
After completing the epoxy resin plastic packaging, step 12 carries out surface grinding;
Step 14, the operation of subsides photoresistance film
The metal substrate front and back of completing after epoxy resin surface grinds in step 13 sticks the photoresistance film that can carry out exposure imaging;
Part photoresistance film is removed at step 15, the metal substrate back side
Utilize exposure imaging equipment that step 14 is completed the metal substrate back side of pasting the operation of photoresistance film and carry out graph exposure, develop and remove part figure photoresistance film, to expose the follow-up needs in the metal substrate back side, carry out etched zone;
Step 10 six, etching
Chemical etching is carried out in the zone of metal substrate back side removal part photoresistance film in step 15;
Step 10 seven, removal photoresistance film
Remove the photoresistance film of metallic substrate surfaces;
But the non-conductive glue material of step 10 eight, the green paint of metal substrate back side coating or sensitization
But the coating of the non-conductive glue material of green paint or sensitization is carried out at the metal substrate back side after step 10 seven is removed the photoresistance film;
Step 10 nine, the exposure development of windowing
Window but utilize exposure imaging equipment to carry out exposure imaging to the non-conductive glue material of the green paint of metal substrate back side coating or sensitization, to expose the follow-up needs in the metal substrate back side, carry out the zone that the high-conductive metal layer is electroplated;
Step 2 ten, plating high-conductive metal layer
But high-conductive metal layer on electroplating in the windowed regions of the non-conductive glue material of the green paint in the metal substrate back side or sensitization in step 10 nine;
Step 2 11, plating anti-oxidant metal layer or coating antioxidant
Carry out anti-oxidant metal layer electroplates or the antioxidant coating in the exposed metal surface of metallic substrate surfaces;
The step 2 12, chips of Daoing Installed
Pass through the second chip in the second Metal Ball upside-down mounting in step 2 11 through the conductive posts top of electroplating anti-oxidant metal layer or coating antioxidant, between Metal Ball and Metal Ball and the space between chip and conductive posts can also can be filled with underfill;
Step 2 13, epoxy resin plastic packaging
Epoxy resin surface after completing load carries out the protection of epoxy resin plastic packaging again;
Step 2 14, plant ball
Complete in step 2 11 on the high-conductive metal layer of electroplating anti-oxidant metal layer or coating antioxidant and implant the first Metal Ball;
Step 2 15, the cutting finished product
The semi-finished product of step 2 14 being completed the epoxy resin plastic packaging carry out cutting operation, make originally in array aggregate mode, to integrate and to contain more than cuttings of plastic-sealed body module of metallic circuit substrate of chip independent, making first is honored as a queen loses three-dimensional systematic chip formal dress encapsulating structure finished product.
A kind of process of the erosion three-dimensional systematic flip-chip bump packaging structure of first being honored as a queen said method comprising the steps of:
Step 1, get metal substrate
Step 2, metallic substrate surfaces preplating copper material
At metallic substrate surfaces preplating one deck copper material;
Step 3, the operation of subsides photoresistance film
Complete metal substrate front and the back side of preplating copper material in step 2 and stick respectively the photoresistance film that can carry out exposure imaging;
Step 4, the positive part photoresistance film of removing of metal substrate
Utilize exposure imaging equipment that step 3 is completed the metal substrate front of pasting the operation of photoresistance film and carry out graph exposure, develop and remove part figure photoresistance film, to expose the positive follow-up needs of metal substrate, carry out the zone that the first metallic circuit layer is electroplated;
Step 5, plating the first metallic circuit layer
Electroplate the first metallic circuit layer in the zone of the positive removal of metal substrate part photoresistance film in step 4;
Step 6, the operation of subsides photoresistance film
Complete the metal substrate front of electroplating the first metallic circuit layer in step 5 and stick the photoresistance film that can carry out exposure imaging;
Step 7, the positive part photoresistance film of removing of metal substrate
Utilize exposure imaging equipment that step 6 is completed the metal substrate front of pasting the operation of photoresistance film and carry out graph exposure, develop and remove part figure photoresistance film, to expose the positive follow-up needs of metal substrate, carry out the zone that the second metallic circuit layer is electroplated;
Step 8, plating the second metallic circuit layer
Electroplate the second metallic circuit layer conduct in order to connect the conductive posts of the first metallic circuit layer and the 3rd metallic circuit layer in the zone of the positive removal of metal substrate part photoresistance film in step 7;
Step 9, removal photoresistance film
Remove the photoresistance film of metallic substrate surfaces;
Step 10, the non-conductive glued membrane of pressing
At the non-conductive glued membrane of the positive pressing one deck of metal substrate;
Step 11, the non-conductive glued membrane of grinding surface
After completing non-conductive glued membrane pressing, step 10 carries out surface grinding;
Step 12, the preliminary treatment of non-conductive glued membrane surface metalation
To the preliminary treatment of metallizing of non-conductive glued membrane surface, its surface attachment last layer metallization macromolecular material or surface roughening are processed;
Step 13, the operation of subsides photoresistance film
Complete metallized metal substrate front and the photoresistance film that can carry out exposure imaging is sticked at the back side in step 12;
Step 14, the positive part photoresistance film of removing of metal substrate
Utilize exposure imaging equipment that step 13 is completed the metal substrate front of pasting the operation of photoresistance film and carry out graph exposure, develop and remove part figure photoresistance film, to expose the positive follow-up needs of metal substrate, carry out etched regional graphics;
Step 15, etching
The etching operation is carried out in zone after metal substrate front photoresistance film in step 14 is windowed;
Step 10 six, removal photoresistance film
Remove the photoresistance film of metallic substrate surfaces;
Step 10 seven, plating the 3rd metallic circuit layer
The metallization pretreatment zone that keeps after etching in metal substrate front in step 15 is electroplated the 3rd metallic circuit layer, namely in the metal substrate front, forms corresponding Ji Dao and pin after the 3rd metallic circuit layer is electroplated and completed;
Step 10 eight, the operation of subsides photoresistance film
Complete the metal substrate front of electroplating the 3rd metallic circuit layer in step 10 seven and stick the photoresistance film that can carry out exposure imaging;
Step 10 nine, the positive part photoresistance film of removing of metal substrate
Utilize exposure imaging equipment that step 10 eight is completed the metal substrate front of pasting the operation of photoresistance film and carry out graph exposure, develop and remove part figure photoresistance film, to expose the positive follow-up needs of metal substrate, carry out the zone that conductive posts is electroplated;
Step 2 ten, plated conductive pillar
Electroplate conductive posts in the zone of the positive removal of metal substrate part photoresistance film in step 10 nine;
Step 2 11, removal photoresistance film
Remove the photoresistance film of metallic substrate surfaces;
Step 2 12, load
Carry out the implantation of the first chip at basic island front surface coated conduction or non-conductive bonding material that step 10 seven forms;
Step 2 13, metal wire bonding
Carry out the operation of bonding metal wire between the pin front of the first chip front side and step 5 formation;
Step 2 14, epoxy resin plastic packaging
The protection of epoxy resin plastic packaging is carried out in metal substrate front after completing the load routing;
Step 2 15, epoxy resin surface grind
After completing the epoxy resin plastic packaging, step 2 14 carries out surface grinding;
Step 2 16, the operation of subsides photoresistance film
The metal substrate front and back of completing after epoxy resin surface grinds in step 2 15 sticks the photoresistance film that can carry out exposure imaging;
Part photoresistance film is removed at step 2 17, the metal substrate back side
Utilize exposure imaging equipment that step 2 16 is completed the metal substrate back side of pasting the operation of photoresistance film and carry out graph exposure, develop and remove part figure photoresistance film, to expose the follow-up needs in the metal substrate back side, carry out etched zone;
Step 2 18, etching
Chemical etching is carried out in the zone of metal substrate back side removal part photoresistance film in step 2 17;
Step 2 19, removal photoresistance film
Remove the photoresistance film of metallic substrate surfaces;
Step 3 ten, plating anti-oxidant metal layer or antioxidant coating
Remove the photoresistance film in step 2 19 after, anti-oxidant metal layer plating or antioxidant coating are carried out in the exposed metal surface of metallic substrate surfaces;
The step 3 11, chips of Daoing Installed
Step 3 ten complete the Ji Dao that electroplates anti-oxidant metal layer or coating antioxidant and the pin back side is filled up between Metal Ball and Metal Ball by underfill and chip and Ji Dao, chip between space carry out upside-down mounting the second chip;
Step 3 12, epoxy resin plastic packaging
The protection of epoxy resin plastic packaging is carried out at the metal substrate back side after completing load;
Step 3 13, plant ball
Complete the conductive posts top of electroplating anti-oxidant metal layer or coating antioxidant in step 3 ten and implant the first Metal Ball;
Step 3 14, cutting finished product
The semi-finished product of step 3 13 being completed the epoxy resin plastic packaging carry out cutting operation, make originally in array aggregate mode, to integrate and to contain more than cuttings of plastic-sealed body module of metallic circuit substrate of chip independent, making first is honored as a queen loses three-dimensional systematic chip formal dress encapsulating structure finished product.
Described step 5 ~ step 10 seven repeats repeatedly between step 8 and step 10 eight.
a kind of erosion three-dimensional systematic flip-chip bump packaging structure of first being honored as a queen, it comprises Ji Dao and pin, described pin front is provided with conductive posts, the first chip just is being equipped with by conduction or non-conductive bonding material in front, described basic island, be connected by the first metal wire between described the first chip front side and pin front, the zone in described Ji Dao and pin front and conductive posts, the zone of the first chip and the first metal wire periphery all is encapsulated with the first plastic packaging material or epoxy resin, described the first plastic packaging material or epoxy resin flush with the conductive posts top, the surface that described conductive posts is exposed the first plastic packaging material or epoxy resin is provided with anti oxidation layer, there is the second chip at described Ji Dao and the pin back side by the underfill upside-down mounting, the zone of described Ji Dao and zone, the pin back side and the second chip periphery all is encapsulated with the second plastic packaging material or epoxy resin, described conductive posts top is provided with the first Metal Ball.
Described conductive posts can single-turn or multi-turn.
Between described pin and pin, cross-over connection has passive device.
Described Ji Dao and the pin back side fill up between Metal Ball and Metal Ball by underfill and chip and Ji Dao, chip between the space upside-down mounting a plurality of the second chips are arranged.
Described the second chip back just is being equipped with the 3rd chip by conduction or non-conductive bonding material, is connected by the second metal wire between described the 3rd chip and the pin back side.
There is the 3rd chip at the described pin back side by the 3rd Metal Ball upside-down mounting, and described the 3rd Metal Ball and the 3rd chip are in the inside of the second plastic packaging material or epoxy resin.
Described the 3rd chip adopts passive device to replace, and described the 3rd Metal Ball and passive device are in the inside of the second plastic packaging material or epoxy resin.
a kind of erosion three-dimensional systematic flip-chip bump packaging structure of first being honored as a queen, it comprises Ji Dao and pin, described pin front is provided with conductive posts, the first chip just is being equipped with by conduction or non-conductive bonding material in front, described basic island, be connected by the first metal wire between described the first chip front side and pin front, the positive zone of described Ji Dao and pin and conductive posts, the first chip and the first metal wire outer peripheral areas all are encapsulated with the first plastic packaging material or epoxy resin, described the first plastic packaging material or epoxy resin flush with the conductive posts top, there is the second chip at described conductive posts top by the second Metal Ball upside-down mounting, described conductive posts top area and the second chip periphery zone all are encapsulated with the second plastic packaging material or epoxy resin, described Ji Dao and the pin back side are provided with the high-conductive metal layer, but be filled with the non-conductive glue material of green paint or sensitization between described high-conductive metal layer and high-conductive metal layer, but described high-conductive metal layer exposes the surface of green paint or the non-conductive glue material of sensitization is provided with anti oxidation layer, be provided with the first Metal Ball on described high-conductive metal layer.
Compared with prior art, the present invention has following beneficial effect:
1, metal current lead frame or organic multilayer circuit base plate all can't be imbedded object, thereby have limited the functional integration of whole encapsulation.And three-dimensional systematic metallic circuit substrate of the present invention, three-dimensional systematic metallic circuit substrate can be imbedded object in manufacturing process again in the interlayer in the middle of substrate, thereby realize loading chip or other assemblies in the both sides of three-dimensional systematic metallic circuit substrate substrate, thereby promoted the functional integration of whole encapsulation;
2, the interlayer in three-dimensional systematic metallic circuit substrate can be because heat conduction or heat radiation need in manufacturing process be imbedded heat conduction or heat radiation object in the position of needs or zone, thereby improves the radiating effect of whole encapsulating structure;
3, the interlayer in three-dimensional systematic metallic circuit substrate can be because of the needs of system and function in manufacturing process be imbedded active member or assembly or passive assembly in the position of needs or zone, thereby has improved the utilance of substrate;
4, can't see the inner interlayer of substrate fully from the outward appearance of three-dimensional systematic metallic circuit substrate package finished product has imbedded because of system or the object of function needs, especially the imbedding X-ray and all can't inspect of the chip of silicon material, fully reach confidentiality and the protectiveness of system and function;
5, the systemic-function integrated of three-dimensional systematic metallic circuit substrate package is many, thereby the component module of said function shared space on PCB is just fewer, thereby has also just reduced cost.
6, the interlayer of three-dimensional systematic metallic circuit substrate can be imbedded high-power component in manufacturing process, with control chip, is contained in respectively the substrate both sides, thereby can avoid the high-power component heat radiation and the signal transmission of interference control chip.
7, three-dimensional systematic metallic circuit substrate adopts plating mode to make circuit, and the live width line-spacing can reach below 15 μ m.
8, three-dimensional systematic metallic circuit substrate adopts plating, etching and plastic package process to make, and technique is simple, and cost is than low 30% left and right of organic substrate.
Description of drawings
Fig. 1 ~ Figure 22 is each operation schematic diagram of a kind of erosion core upside-down mounting three-dimensional systematic metal circuit board structural manufacturing process embodiment of the method 1 of first being honored as a queen of the present invention.
Figure 23 is the schematic diagram of a kind of erosion three-dimensional systematic flip-chip bump packaging structure embodiment 1 that first is honored as a queen of the present invention.
Figure 24 ~ Figure 48 is each operation schematic diagram of a kind of erosion three-dimensional systematic flip-chip bump packaging structure process embodiment 2 that first is honored as a queen of the present invention.
Figure 49 is the schematic diagram of a kind of erosion three-dimensional systematic flip-chip bump packaging structure embodiment 2 that first is honored as a queen of the present invention.
Figure 50 ~ Figure 95 is each operation schematic diagram of a kind of erosion three-dimensional systematic flip-chip bump packaging structure process embodiment 3 that first is honored as a queen of the present invention.
Figure 96 is the schematic diagram of a kind of erosion three-dimensional systematic flip-chip bump packaging structure embodiment 3 that first is honored as a queen of the present invention.
Figure 97 is the schematic diagram of a kind of erosion three-dimensional systematic flip-chip bump packaging structure embodiment 4 that first is honored as a queen of the present invention.
Figure 98 is the schematic diagram of a kind of erosion three-dimensional systematic flip-chip bump packaging structure embodiment 5 that first is honored as a queen of the present invention.
Figure 99 is the schematic diagram of a kind of erosion three-dimensional systematic flip-chip bump packaging structure embodiment 6 that first is honored as a queen of the present invention.
Figure 100 is the schematic diagram of a kind of erosion three-dimensional systematic flip-chip bump packaging structure embodiment 7 that first is honored as a queen of the present invention.
Figure 101 is the schematic diagram of a kind of erosion three-dimensional systematic flip-chip bump packaging structure embodiment 8 that first is honored as a queen of the present invention.
Figure 102 tradition four sides is without the schematic diagram of pin die-attach area encapsulating structure.
Figure 103 is the schematic diagram of traditional organic multilayer circuit base plate encapsulating structure.
Wherein:
Base island 1
Pin 2
Conductive posts 3
The first chip 4
The first metal wire 5
Conduction or non-conductive bonding material 6
Underfill 7
The second chip 8
The first plastic packaging material or epoxy resin 9
The second plastic packaging material or epoxy resin 10
Anti oxidation layer 11
High-conductive metal layer 12
But the non-conductive glue material 13 of green paint or sensitization
Passive device 14
The 3rd chip 15
The second metal wire 16
The first Metal Ball 17
The second Metal Ball 18
The 3rd Metal Ball 19
Static release ring 20.
Embodiment
The present invention is a kind of first be honored as a queen erosion three-dimensional systematic flip-chip bump packaging structure and process as follows:
Embodiment 1: individual layer circuit single-chip upside-down mounting individual pen pin (1)
referring to Figure 23, a kind of erosion three-dimensional systematic flip-chip bump packaging structure of first being honored as a queen of the present invention, it comprises basic island 1 and pin 2, described pin 2 fronts are provided with conductive posts 3, the first chip 4 just is being equipped with by conduction or non-conductive bonding material 6 in 1 front, described basic island, described the first chip 4 positive with pin 2 fronts between be connected by the first metal wire 5, the zone in described basic island 1 and pin 2 fronts and conductive posts 3, the zone of the first chip 4 and the first metal wire 5 peripheries all is encapsulated with the first plastic packaging material or epoxy resin 9, described the first plastic packaging material or epoxy resin 9 flush with conductive posts 3 tops, the surface that described conductive posts 3 is exposed the first plastic packaging material or epoxy resin 9 is provided with anti oxidation layer 11, there is the second chip 8 at described basic island 1 and pin 2 back sides by underfill 7 upside-down mountings, the zone of described basic island 1 and pin 2 zones, the back side and the second chip 8 peripheries all is encapsulated with the second plastic packaging material or epoxy resin 10, described conductive posts 3 tops are provided with the first Metal Ball 17.
Its process is as follows:
Step 1, get metal substrate
Referring to Fig. 1, get the suitable metal substrate of a slice thickness, the material of metal substrate can be metallics or the nonmetallic substance that copper material, iron material, zinc-plated material, stainless steel, aluminium maybe can reach conducting function, and the selection of thickness can be selected according to product performance;
Step 2, metallic substrate surfaces preplating copper material
Referring to Fig. 2, at metallic substrate surfaces preplating one deck copper material, copper layer thickness is 2 ~ 10 microns, and needing also according to function can attenuate or thicken, and plating mode can be that metallide also can adopt the mode of chemical deposition;
Step 3, the operation of subsides photoresistance film
Referring to Fig. 3, to complete metal substrate front and the back side of preplating copper material in step 2 and stick respectively the photoresistance film that can carry out exposure imaging, purpose is the making for follow-up metallic circuit figure, the photoresistance film can be that dry type photoresistance film can be also wet type photoresistance film;
Step 4, the positive part photoresistance film of removing of metal substrate
Referring to Fig. 4, utilize exposure imaging equipment that step 3 is completed the metal substrate front of pasting the operation of photoresistance film and carry out graph exposure, develop and remove part figure photoresistance film, carry out to expose the positive follow-up needs of metal substrate the zone that the metallic circuit layer is electroplated;
Step 5, plated metal line layer
Referring to Fig. 5, electroplate the metallic circuit layer in the zone of the positive removal of metal substrate part photoresistance film in step 4, after electroplating and complete, the metallic circuit layer namely in the metal substrate front, forms corresponding Ji Dao and pin, the material of metallic circuit layer can be copper, aluminium, nickel, silver, gold, copper silver, nickel is golden or NiPdAu etc., the metallic circuit layer thickness is 5 ~ 20 microns, can select different plating materials according to different application, according to the thickness that the different qualities conversion is electroplated, plating mode can be that metallide also can adopt the mode of chemical deposition;
Step 6, the operation of subsides photoresistance film
Referring to Fig. 6, to complete the metal substrate front of plated metal line layer in step 5 and stick the photoresistance film that can carry out exposure imaging, purpose is the making for follow-up conductive posts, the photoresistance film can be that dry type photoresistance film can be also wet type photoresistance film;
Step 7, the positive part photoresistance film of removing of metal substrate
Referring to Fig. 7, utilize exposure imaging equipment that step 6 is completed the metal substrate front of pasting the operation of photoresistance film and carry out graph exposure, develop and remove part figure photoresistance film, carry out to expose the positive follow-up needs of metal substrate the zone that conductive posts is electroplated;
Step 8, plated conductive pillar
Referring to Fig. 8, electroplate conductive posts in the zone of the positive removal of metal substrate part photoresistance film in step 7, the material of conductive posts can be copper, aluminium, nickel, silver, gold, copper is silver-colored, nickel is golden, NiPdAu maybe can reach the materials such as metallics of conducting function, and plating mode can be that metallide also can adopt the mode of chemical deposition;
Step 9, removal photoresistance film
Referring to Fig. 9, remove the photoresistance film of metallic substrate surfaces, the method for removing the photoresistance film adopts chemical medicinal liquid soften and adopt high pressure water washing to get final product;
Step 10, load
, referring to Figure 10, at basic island front surface coated conduction or the non-conductive bonding material that step 5 forms, carry out the implantation of the first chip;
Step 11, metal wire bonding
, referring to Figure 11, carry out the operation of bonding metal wire between the pin of chip front side and step 5 formation;
Step 12, epoxy resin plastic packaging
Referring to Figure 12, the protection of epoxy resin plastic packaging is carried out in the metal substrate front after completing the load routing, and epoxide resin material can be selected filler to be arranged or do not have Packed kind according to product performance;
Step 13, epoxy resin surface grind
, referring to Figure 13, after completing the epoxy resin plastic packaging, step 12 carries out surface grinding;
Step 14, the operation of subsides photoresistance film
Referring to Figure 14, the metal substrate front and back of completing after epoxy resin surface grinds in step 13 sticks the photoresistance film that can carry out exposure imaging;
Part photoresistance film is removed at step 15, the metal substrate back side
Referring to Figure 15, utilize exposure imaging equipment that step 14 is completed the metal substrate back side of pasting the operation of photoresistance film and carry out graph exposure, develop and remove part figure photoresistance film, carry out etched zone to expose the follow-up needs in the metal substrate back side;
Step 10 six, etching
Referring to Figure 16, chemical etching is carried out in the zone of metal substrate back side removal part photoresistance film in step 15, and etching method can adopt the etch process of copper chloride or iron chloride;
Step 10 seven, removal photoresistance film
Referring to Figure 17, remove the photoresistance film of metallic substrate surfaces, the method for removing the photoresistance film adopts chemical medicinal liquid soften and adopt high pressure water washing to get final product;
Step 10 eight, plating anti-oxidant metal layer or coating antioxidant (OSP)
, referring to Figure 18, remove after the photoresistance film the exposed metal surface of metallic substrate surfaces and carry out anti-oxidant metal layer and electroplate in step 10 seven, as golden in gold, nickel, NiPdAu, tin or coating antioxidant (OSP);
The step 10 nine, chips of Daoing Installed
Referring to Figure 19, complete the Ji Dao that electroplates anti-oxidant metal layer or coating antioxidant and the pin back side is filled up between Metal Ball and Metal Ball by underfill and chip and Ji Dao, basic island between the space upside-down mounting a plurality of the second chips are arranged;
Step 2 ten, epoxy resin plastic packaging
Referring to Figure 20, the protection of epoxy resin plastic packaging is carried out at the metal substrate back side after completing load, and epoxide resin material can be selected filler to be arranged or do not have Packed kind according to product performance;
Step 2 11, plant ball
, referring to Figure 21, complete the conductive posts top of electroplating anti-oxidant metal layer or coating antioxidant in step 10 eight and implant the first Metal Ball;
Step 2 12, cutting finished product
Referring to Figure 22, the semi-finished product of step 2 11 being completed the epoxy resin plastic packaging carry out cutting operation, make originally in array aggregate mode, to integrate and to contain more than cuttings of plastic-sealed body module of chip independent, making first is honored as a queen loses three-dimensional systematic chip formal dress encapsulating structure finished product.
Embodiment 2: individual layer circuit single-chip upside-down mounting individual pen pin (2)
referring to Figure 49, a kind of erosion three-dimensional systematic flip-chip bump packaging structure of first being honored as a queen of the present invention, it comprises basic island 1 and pin 2, described pin 2 fronts are provided with conductive posts 3, the first chip 4 just is being equipped with by conduction or non-conductive bonding material 6 in 1 front, described basic island, described the first chip 4 positive with pin 2 fronts between be connected by the first metal wire 5, described basic island 1 and the positive zone of pin 2 and conductive posts 3, the first chip 4 and the first metal wire 5 outer peripheral areas all are encapsulated with the first plastic packaging material or epoxy resin 9, described the first plastic packaging material or epoxy resin 9 flush with conductive posts 3 tops, described conductive posts 3 has the second chip 8 by the second Metal Ball 18 upside-down mountings, described conductive posts 3 top area and the second chip 8 outer peripheral areas all are encapsulated with the second plastic packaging material or epoxy resin 10, described basic island 1 and pin 2 back sides are provided with high-conductive metal layer 12, but be filled with the non-conductive glue material 13 of green paint or sensitization between described high-conductive metal layer 12 and high-conductive metal layer 12, but described high-conductive metal layer 12 exposes the surface of green paint or the non-conductive glue material 13 of sensitization is provided with anti oxidation layer 11, be provided with the first Metal Ball 17 on described high-conductive metal layer 12.
Embodiment 2 is with the difference of embodiment 1: in embodiment 2, conductive posts 3 reality are used as interior pin, and the plastic packaging process is carried out in the metal substrate front; And in embodiment 1, conductive posts 3 reality are used as outer pin, and the plastic packaging process is carried out at the metal substrate back side.
Its process is as follows:
Step 1, get metal substrate
Referring to Figure 24, get the suitable metal substrate of a slice thickness, the material of metal substrate can be copper material, iron material, zinc-plated material, stainless steel or aluminium metallics that maybe can reach conducting function etc., the selection of thickness can be selected according to product performance;
Step 2, metallic substrate surfaces preplating copper material
Referring to Figure 25, at metallic substrate surfaces preplating one deck copper material, copper layer thickness is 2 ~ 10 microns, and needing also according to function can attenuate or thicken, and plating mode can be that metallide also can adopt the mode of chemical deposition;
Step 3, the operation of subsides photoresistance film
Referring to Figure 26, to complete metal substrate front and the back side of preplating copper material in step 2 and stick respectively the photoresistance film that can carry out exposure imaging, purpose is the making for follow-up metallic circuit figure, the photoresistance film can be that dry type photoresistance film can be also wet type photoresistance film;
Step 4, the positive part photoresistance film of removing of metal substrate
Referring to Figure 27, utilize exposure imaging equipment that step 3 is completed the metal substrate front of pasting the operation of photoresistance film and carry out graph exposure, develop and remove part figure photoresistance film, carry out to expose the positive follow-up needs of metal substrate the zone that the metallic circuit layer is electroplated;
Step 5, plated metal line layer
referring to Figure 28, electroplate the metallic circuit layer in the zone of the positive removal of metal substrate part photoresistance film in step 4, after electroplating and complete, the metallic circuit layer namely in the metal substrate front, forms corresponding Ji Dao and pin, the material of metallic circuit layer can be copper, aluminium, nickel, silver, gold, copper silver, nickel gold or NiPdAu maybe can reach the metallics of conducting function etc., the metallic circuit layer thickness is 5 ~ 20 microns, can select different plating materials according to different application, thickness according to different qualities conversion plating, plating mode can be that metallide also can adopt the mode of chemical deposition,
Step 6, the operation of subsides photoresistance film
Referring to Figure 29, to complete the metal substrate front of plated metal line layer in step 5 and stick the photoresistance film that can carry out exposure imaging, purpose is the making for follow-up conductive posts, the photoresistance film can be that dry type photoresistance film can be also wet type photoresistance film;
Step 7, the positive part photoresistance film of removing of metal substrate
Referring to Figure 30, utilize exposure imaging equipment that step 6 is completed the metal substrate front of pasting the operation of photoresistance film and carry out graph exposure, develop and remove part figure photoresistance film, carry out to expose the positive follow-up needs of metal substrate the zone that conductive posts is electroplated;
Step 8, plated conductive pillar
Referring to Figure 31, electroplate conductive posts in the zone of the positive removal of metal substrate part photoresistance film in step 7, the material of conductive posts can be copper, aluminium, nickel, silver, gold, copper is silver-colored, nickel is golden, NiPdAu maybe can reach the materials such as metallics of conducting function, and plating mode can be that metallide also can adopt the mode of chemical deposition;
Step 9, removal photoresistance film
Referring to Figure 32, remove the photoresistance film of metallic substrate surfaces, the method for removing the photoresistance film adopts chemical medicinal liquid soften and adopt high pressure water washing to get final product;
Step 10, load
, referring to Figure 33, at basic island front surface coated conduction or the non-conductive bonding material that step 5 forms, carry out the implantation of the first chip;
Step 11, metal wire bonding
, referring to Figure 34, carry out the operation of bonding metal wire between the pin front of the first chip front side and step 5 formation;
Step 12, epoxy resin plastic packaging
Referring to Figure 35, the protection of epoxy resin plastic packaging is carried out in the metal substrate front after completing the load routing, and epoxide resin material can be selected filler to be arranged or do not have Packed kind according to product performance;
Step 13, epoxy resin surface grind
, referring to Figure 36, after completing the epoxy resin plastic packaging, step 12 carries out surface grinding;
Step 14, the operation of subsides photoresistance film
Referring to Figure 37, the metal substrate front and back of completing after epoxy resin surface grinds in step 13 sticks the photoresistance film that can carry out exposure imaging;
Part photoresistance film is removed at step 15, the metal substrate back side
Referring to Figure 38, utilize exposure imaging equipment that step 14 is completed the metal substrate back side of pasting the operation of photoresistance film and carry out graph exposure, develop and remove part figure photoresistance film, carry out etched zone to expose the follow-up needs in the metal substrate back side;
Step 10 six, etching
Referring to Figure 39, chemical etching is carried out in the zone of metal substrate back side removal part photoresistance film in step 15, and etching method can adopt the etch process of copper chloride or iron chloride;
Step 10 seven, removal photoresistance film
Referring to Figure 40, remove the photoresistance film of metallic substrate surfaces, the method for removing the photoresistance film adopts chemical medicinal liquid soften and adopt high pressure water washing to get final product;
But the non-conductive glue material of step 10 eight, the green paint of metal substrate back side coating or sensitization
Referring to Figure 41, but the coating of the non-conductive glue material of green paint or sensitization is carried out at the metal substrate back side after step 10 seven is removed the photoresistance film;
Step 10 nine, the exposure development of windowing
Referring to Figure 42, window but utilize exposure imaging equipment to carry out exposure imaging to the non-conductive glue material of the green paint of metal substrate back side coating or sensitization, carry out to expose the follow-up needs in the metal substrate back side zone that the high-conductive metal layer is electroplated;
Step 2 ten, plating high-conductive metal layer
Referring to Figure 43, but high-conductive metal layer on electroplating in the windowed regions of the non-conductive glue material of the green paint in the metal substrate back side or sensitization in step 10 nine, and plating mode can be that metallide also can adopt the mode of chemical deposition;
Step 2 11, plating anti-oxidant metal layer or coating antioxidant (OSP)
, referring to Figure 44, carry out anti-oxidant metal layer in the exposed metal surface of metallic substrate surfaces and electroplate, as golden in gold, nickel, NiPdAu, tin or coating antioxidant (OSP);
The step 2 12, chips of Daoing Installed
Referring to Figure 45, pass through the second chip in the second Metal Ball upside-down mounting in step 2 11 through the conductive posts top of electroplating anti-oxidant metal layer or coating antioxidant, underfill also can be injected in order to fill up between Metal Ball and Metal Ball and the space between chip and plastic packaging material in the second chip below of Installed;
Step 2 13, epoxy resin plastic packaging
Referring to Figure 46, the epoxy resin surface after completing load carries out the protection of epoxy resin plastic packaging again, and epoxide resin material can be selected filler to be arranged or do not have Packed kind according to product performance;
Step 2 14, plant ball
, referring to Figure 47, complete in step 2 11 on the high-conductive metal layer of electroplating anti-oxidant metal layer or coating antioxidant and implant the first Metal Ball;
Step 2 15, the cutting finished product
Referring to Figure 48, the semi-finished product of step 2 14 being completed the epoxy resin plastic packaging carry out cutting operation, make originally in array aggregate mode, to integrate and to contain more than cuttings of plastic-sealed body module of metallic circuit substrate of chip independent, making first is honored as a queen loses three-dimensional systematic chip formal dress encapsulating structure finished product.
Embodiment 3: multilayer line single-chip upside-down mounting individual pen pin
referring to Figure 96, a kind of erosion three-dimensional systematic flip-chip bump packaging structure of first being honored as a queen of the present invention, it comprises basic island 1 and pin 2, described pin 2 fronts are provided with conductive posts 3, the first chip 4 just is being equipped with by conduction or non-conductive bonding material 6 in 1 front, described basic island, described the first chip 4 positive with pin 2 fronts between be connected by the first metal wire 5, the zone in described basic island 1 and pin 2 fronts and conductive posts 3, the zone of the first chip 4 and the first metal wire 5 peripheries all is encapsulated with the first plastic packaging material or epoxy resin 9, described the first plastic packaging material or epoxy resin 9 flush with conductive posts 3 tops, the surface that described conductive posts 3 is exposed the first plastic packaging material or epoxy resin 9 is provided with anti oxidation layer 11, there is the second chip 8 at described basic island 1 and pin 2 back sides by the underfill upside-down mounting, the zone of described basic island 1 and pin 2 zones, the back side and the second chip 8 peripheries all is encapsulated with the second plastic packaging material or epoxy resin 10, described conductive posts 3 tops are provided with the first Metal Ball 17.
Embodiment 3 is with the difference of embodiment 1: described basic island 1 and pin 2 form by the multiple layer metal line layer, are connected by conductive posts between metallic circuit layer and metallic circuit layer.
Its process is as follows:
Step 1, get metal substrate
Referring to Figure 50, get the suitable metal substrate of a slice thickness, the material of metal substrate can be metallics or the nonmetallic substance that copper material, iron material, zinc-plated material, stainless steel, aluminium maybe can reach conducting function, and the selection of thickness can be selected according to product performance;
Step 2, metallic substrate surfaces preplating copper material
Referring to Figure 51, at metallic substrate surfaces preplating one deck copper material, copper layer thickness is 2 ~ 10 microns, and needing also according to function can attenuate or thicken, and plating mode can be that metallide also can adopt the mode of chemical deposition;
Step 3, the operation of subsides photoresistance film
Referring to Figure 52, to complete metal substrate front and the back side of preplating copper material in step 2 and stick respectively the photoresistance film that can carry out exposure imaging, purpose is the making for follow-up metallic circuit figure, the photoresistance film can be that dry type photoresistance film can be also wet type photoresistance film;
Step 4, the positive part photoresistance film of removing of metal substrate
Referring to Figure 53, utilize exposure imaging equipment that step 3 is completed the metal substrate front of pasting the operation of photoresistance film and carry out graph exposure, develop and remove part figure photoresistance film, carry out to expose the positive follow-up needs of metal substrate the zone that the first metallic circuit layer is electroplated;
Step 5, plating the first metallic circuit layer
Referring to Figure 54, electroplate the first metallic circuit layer in the zone of the positive removal of metal substrate part photoresistance film in step 4, the material of the first metallic circuit layer can be copper, aluminium, nickel, silver, gold, copper silver, nickel is golden or NiPdAu etc., and plating mode can be that metallide also can adopt the mode of chemical deposition;
Step 6, the operation of subsides photoresistance film
Referring to Figure 55, to complete the metal substrate front of electroplating the first metallic circuit layer in step 5 and stick the photoresistance film that can carry out exposure imaging, purpose is the making for follow-up metallic circuit figure, the photoresistance film can be that dry type photoresistance film can be also wet type photoresistance film;
Step 7, the positive part photoresistance film of removing of metal substrate
Referring to Figure 56, utilize exposure imaging equipment that step 6 is completed the metal substrate front of pasting the operation of photoresistance film and carry out graph exposure, develop and remove part figure photoresistance film, carry out to expose the positive follow-up needs of metal substrate the zone that the second metallic circuit layer is electroplated;
Step 8, plating the second metallic circuit layer
Referring to Figure 57, electroplate the second metallic circuit layer conduct in order to connect the conductive posts of the first metallic circuit layer and the 3rd metallic circuit layer in the zone of the positive removal of metal substrate part photoresistance film in step 7, the material of the second metallic circuit layer can be copper, aluminium, nickel, silver, gold, copper is silver-colored, nickel is golden, NiPdAu maybe can reach the materials such as metallics of conducting function, and plating mode can be that metallide also can adopt the mode of chemical deposition;
Step 9, removal photoresistance film
Referring to Figure 58, remove the photoresistance film of metallic substrate surfaces, the method for removing the photoresistance film adopts chemical medicinal liquid soften and adopt high pressure water washing to get final product;
Step 10, the non-conductive glued membrane of pressing
, referring to Figure 59,, at the non-conductive glued membrane of positive (zone that line layer is arranged) the pressing one deck of metal substrate, its objective is to be that the first metallic circuit layer and the 3rd metallic circuit layer insulate; The mode of the non-conductive glued membrane of pressing can adopt conventional roll unit, or carries out pressing under vacuum environment, to prevent the pressing process, produces the residual of air; Non-conductive glued membrane is mainly pressing formula thermosetting epoxy resin, and can adopt according to product performance in epoxy resin, there is no filler or Packed non-conductive glued membrane;
Step 11, the non-conductive glued membrane of grinding surface
Referring to Figure 60, after completing non-conductive glued membrane pressing, step 10 carries out surface grinding, and purpose is to expose the second metallic circuit layer, keep the evenness of non-conductive glued membrane and the second metallic circuit layer and the thickness of controlling non-conductive glued membrane;
Step 12, the preliminary treatment of non-conductive glued membrane surface metalation
Referring to Figure 61, to the preliminary treatment of metallizing of non-conductive glued membrane surface, its surface attachment last layer metallization macromolecular material or surface roughening are processed, purpose is the catalyst conversion that as subsequent metal material, can plate, and the adhesion metal macromolecular material can adopt spraying, plasma concussion, surface coarsening etc. to go to dry again and get final product;
Step 13, the operation of subsides photoresistance film
Referring to Figure 62, complete metallized metal substrate front and the photoresistance film that can carry out exposure imaging is sticked at the back side in step 12, purpose is the making for follow-up metallic circuit figure, the photoresistance film can be that dry type photoresistance film can be also wet type photoresistance film;
Step 14, the positive part photoresistance film of removing of metal substrate
Referring to Figure 63, utilize exposure imaging equipment that step 13 is completed the metal substrate front of pasting the operation of photoresistance film and carry out graph exposure, develop and remove part figure photoresistance film, carry out etched regional graphics to expose the positive follow-up needs of metal substrate;
Step 15, etching
Referring to Figure 64, the etching operation is carried out in zone after metal substrate front photoresistance film in step 14 is windowed, its objective is and utilize the follow-up metallization pretreatment zone that does not need to electroplate the 3rd metallic circuit layer of corrosion technology erosion removal, carrying out etching method can be copper chloride or the technology mode of iron chloride;
Step 10 six, removal photoresistance film
Referring to Figure 65, remove the photoresistance film in metal substrate front, the method for removing the photoresistance film adopts chemical medicinal liquid soften and adopt high pressure water washing to get final product;
Step 10 seven, plating the 3rd metallic circuit layer
Referring to Figure 66, the metallization pretreatment zone that keeps after etching in metal substrate front in step 15 is electroplated the 3rd metallic circuit layer, the material of the 3rd metallic circuit layer can be copper, aluminium, nickel, silver, gold, copper silver, nickel is golden or NiPdAu etc., and plating mode can be that metallide also can adopt the mode of chemical deposition;
Step 10 eight, the operation of subsides photoresistance film
Referring to Figure 67, to complete the metal substrate front of electroplating the 3rd metallic circuit layer in step 10 eight and stick the photoresistance film that can carry out exposure imaging, purpose is the making for follow-up metallic circuit figure, the photoresistance film can be that dry type photoresistance film can be also wet type photoresistance film;
Step 10 nine, the positive part photoresistance film of removing of metal substrate
Referring to Figure 68, utilize exposure imaging equipment that step 10 eight is completed the metal substrate front of pasting the operation of photoresistance film and carry out graph exposure, develop and remove part figure photoresistance film, to expose the positive follow-up needs of metal substrate, carry out the zone that the 4th metallic circuit layer is electroplated;
Step 2 ten, plating the 4th metallic circuit layer
Referring to Figure 69, electroplate the 4th metallic circuit layer as belong to the conductive posts of line layer in order to connect the 3rd metallic circuit layer and five metals in the zone of the positive removal of metal substrate part photoresistance film in step 10 nine, the material of the 4th metallic circuit layer can be copper, aluminium, nickel, silver, gold, copper is silver-colored, nickel is golden, NiPdAu maybe can reach the materials such as metallics of conducting function, and plating mode can be that metallide also can adopt the mode of chemical deposition;
Step 2 11, removal photoresistance film
Referring to Figure 70, remove the photoresistance film in metal substrate front, the method for removing the photoresistance film adopts chemical medicinal liquid soften and adopt high pressure water washing to get final product;
Step 2 12, the non-conductive glued membrane of pressing
, referring to Figure 71,, at the non-conductive glued membrane of positive (zone that line layer is arranged) the pressing one deck of metal substrate, its objective is to be that the 3rd metallic circuit layer and five metals belong to line layer and insulate; The mode of the non-conductive glued membrane of pressing can adopt conventional roll unit, or carries out pressing under vacuum environment, to prevent the pressing process, produces the residual of air; Non-conductive glued membrane is mainly pressing formula thermosetting epoxy resin, and can adopt according to product performance in epoxy resin, there is no filler or Packed non-conductive glued membrane;
Step 2 13, the non-conductive glued membrane of grinding surface
Referring to Figure 72, after completing non-conductive glued membrane pressing, step 2 12 carries out surface grinding, and purpose is to expose the 4th metallic circuit layer, keep the evenness of non-conductive glued membrane and the 4th metallic circuit layer and the thickness of controlling non-conductive glued membrane;
Step 2 14, the preliminary treatment of non-conductive glued membrane surface metalation
Referring to Figure 73, to the preliminary treatment of metallizing of non-conductive glued membrane surface, its surface attachment last layer metallization macromolecular material or surface roughening are processed, purpose is the catalyst conversion that as subsequent metal material, can plate, and the adhesion metal macromolecular material can adopt spraying, plasma concussion, surface coarsening etc. to go to dry again and get final product;
Step 2 15, the operation of subsides photoresistance film
Referring to Figure 74, complete metallized metal substrate front and the photoresistance film that can carry out exposure imaging is sticked at the back side in step 2 14, purpose is the making for follow-up metallic circuit figure, the photoresistance film can be that dry type photoresistance film can be also wet type photoresistance film;
Step 2 16, the positive part photoresistance film of removing of metal substrate
Referring to Figure 75, utilize exposure imaging equipment that step 2 15 is completed the metal substrate front of pasting the operation of photoresistance film and carry out graph exposure, develop and remove part figure photoresistance film, carry out etched regional graphics to expose the positive follow-up needs of metal substrate;
Step 2 17, etching
Referring to Figure 76, the etching operation is carried out in zone after metal substrate front photoresistance film in step 2 16 is windowed, its objective is and utilize that the corrosion technology erosion removal is follow-up not to be needed to electroplate five metals and belong to the metallization pretreatment zone of line layer, carrying out etching method can be copper chloride or the technology mode of iron chloride;
Step 2 18, removal photoresistance film
Referring to Figure 77, remove the photoresistance film of metallic substrate surfaces, the method for removing the photoresistance film adopts chemical medicinal liquid soften and adopt high pressure water washing to get final product;
Step 2 19, plating five metals belong to line layer
Referring to Figure 78, on the metallization pretreatment zone that the metal substrate front keeps after etching in step 2 17 is electroplated, five metals belongs to line layer, five metals belong to line layer electroplate complete after namely at the positive corresponding Ji Dao of formation of metal substrate and pin, the material that five metals belongs to line layer can be copper, aluminium, nickel, silver, gold, copper silver, nickel is golden or NiPdAu etc., and plating mode can be that metallide also can adopt the mode of chemical deposition;
Step 3 ten, the operation of subsides photoresistance film
Referring to Figure 79, to complete and electroplate the metal substrate front that five metals belongs to line layer and stick the photoresistance film that can carry out exposure imaging in step 2 19, purpose is the making for follow-up conductive posts, the photoresistance film can be that dry type photoresistance film can be also wet type photoresistance film;
Step 3 11, the positive part photoresistance film of removing of metal substrate
Referring to Figure 80, utilize exposure imaging equipment that step 3 ten is completed the metal substrate front of pasting the operation of photoresistance film and carry out graph exposure, develop and remove part figure photoresistance film, carry out to expose the positive follow-up needs of metal substrate the zone that conductive posts is electroplated;
Step 3 12, plated conductive pillar
Referring to Figure 81, electroplate conductive posts in the zone of the positive removal of metal substrate part photoresistance film in step 3 11, the material of conductive posts can be copper, aluminium, nickel, silver, gold, copper is silver-colored, nickel is golden, NiPdAu maybe can reach the materials such as metallics of conducting function, and plating mode can be that metallide also can adopt the mode of chemical deposition;
Step 3 13, removal photoresistance film
Referring to Figure 82, remove the photoresistance film of metallic substrate surfaces, the method for removing the photoresistance film adopts chemical medicinal liquid soften and adopt high pressure water washing to get final product;
Step 3 14, load
, referring to Figure 83, at basic island front surface coated conduction or the non-conductive bonding material that step 2 19 forms, carry out the implantation of the first chip;
Step 3 15, metal wire bonding
, referring to Figure 84, carry out the operation of bonding metal wire between the pin front of the first chip front side and step 5 formation;
Step 3 16, epoxy resin plastic packaging
Referring to Figure 85, the protection of epoxy resin plastic packaging is carried out in the metal substrate front after completing the load routing, and epoxide resin material can be selected filler to be arranged or do not have Packed kind according to product performance;
Step 3 17, epoxy resin surface grind
, referring to Figure 86, after completing the epoxy resin plastic packaging, step 3 16 carries out surface grinding;
Step 3 18, the operation of subsides photoresistance film
Referring to Figure 87, the metal substrate front and back of completing after epoxy resin surface grinds in step 3 17 sticks the photoresistance film that can carry out exposure imaging;
Part photoresistance film is removed at step 3 19, the metal substrate back side
Referring to Figure 88, utilize exposure imaging equipment that step 3 18 is completed the metal substrate back side of pasting the operation of photoresistance film and carry out graph exposure, develop and remove part figure photoresistance film, carry out etched zone to expose the follow-up needs in the metal substrate back side;
Step 4 ten, etching
Referring to Figure 89, chemical etching is carried out in the zone of metal substrate back side removal part photoresistance film in step 3 19, and etching method can adopt the etch process of copper chloride or iron chloride;
Step 4 11, removal photoresistance film
Referring to Figure 90, remove the photoresistance film of metallic substrate surfaces, the method for removing the photoresistance film adopts chemical medicinal liquid soften and adopt high pressure water washing to get final product;
Step 4 12, plating anti-oxidant metal layer or coating antioxidant (OSP)
, referring to Figure 91, remove after the photoresistance film the exposed metal surface of metallic substrate surfaces and carry out anti-oxidant metal layer and electroplate in step 4 11, as golden in gold, nickel, NiPdAu, tin or coating antioxidant (OSP);
The step 4 13, chips of Daoing Installed
Referring to Figure 92, step 4 12 complete the Ji Dao that electroplates anti-oxidant metal layer or coating antioxidant and the pin back side is filled up between Metal Ball and Metal Ball by underfill and chip and Ji Dao, pin between the space upside-down mounting on the second chip;
Step 4 14, epoxy resin plastic packaging
Referring to Figure 93, the protection of epoxy resin plastic packaging is carried out at the metal substrate back side after completing load, and epoxide resin material can be selected filler to be arranged or do not have Packed kind according to product performance;
Step 4 15, plant ball
, referring to Figure 94, complete the conductive posts top of electroplating anti-oxidant metal layer or coating antioxidant in step 4 12 and implant the first Metal Ball;
Step 4 16, cutting finished product
Referring to Figure 95, the semi-finished product of step 4 13 being completed the epoxy resin plastic packaging carry out cutting operation, make originally in array aggregate mode, to integrate and to contain more than cuttings of plastic-sealed body module of metallic circuit substrate of chip independent, making first is honored as a queen loses three-dimensional systematic chip formal dress encapsulating structure finished product.
Embodiment 4: single-chip formal dress individual pen pin+passive device
Referring to Figure 97, the difference of embodiment 4 and embodiment 1 is: between described pin 2 back sides and pin 2 back sides, cross-over connection has passive device 14.
Embodiment 5: the multi-chip tiling
Referring to Figure 98, embodiment 5 is with the difference of embodiment 1: there are a plurality of the second chips 8 at described basic island 1 and pin 2 back sides by underfill 7 upside-down mountings.
Embodiment 6: multi-chip stacking falls formal dress
Referring to Figure 99, embodiment 6 is with the difference of embodiment 1: the 3rd chip 15 just is being equipped with by conduction or non-conductive bonding material 6 in described second chip 8 back sides, is connected by the second metal wire 16 between described the 3rd chip 15 and pin 2 back sides.
Embodiment 7: the multi-chip stacking upside-down mounting
Referring to Figure 100, embodiment 7 is with the difference of embodiment 1: there is the 3rd chip 15 at described pin 2 back sides by the 3rd Metal Ball 19 upside-down mountings, and described the 3rd Metal Ball 19 and the 3rd chip 15 are in the inside of the second plastic packaging material or epoxy resin 10.
Described the 3rd chip 15 can adopt passive device 14 to replace, and described the 3rd Metal Ball 19 and passive device 14 are in the inside of the second plastic packaging material or epoxy resin 10.
Embodiment 8: single-chip upside-down mounting multi-circle pin+passive device+static release ring
Referring to Figure 101, embodiment 8 is with the difference of embodiment 1: described pin 2 has multi-turn, be provided with conductive posts 3 on described multi-circle pin 2, be provided with static release ring 20 between described basic island 1 and pin 2, between described pin 2 back sides and pin 2 back sides, cross-over connection has passive device 14.

Claims (15)

1. process of erosion three-dimensional systematic flip-chip bump packaging structure of first being honored as a queen is characterized in that said method comprising the steps of:
Step 1, get metal substrate
Step 2, metallic substrate surfaces preplating copper material
At metallic substrate surfaces preplating one deck copper material;
Step 3, the operation of subsides photoresistance film
Complete metal substrate front and the back side of preplating copper material in step 2 and stick respectively the photoresistance film that can carry out exposure imaging;
Step 4, the positive part photoresistance film of removing of metal substrate
Utilize exposure imaging equipment that step 3 is completed the metal substrate front of pasting the operation of photoresistance film and carry out graph exposure, develop and remove part figure photoresistance film, to expose the positive follow-up needs of metal substrate, carry out the zone that the metallic circuit layer is electroplated;
Step 5, plated metal line layer
Electroplate the metallic circuit layer in the positive zone of removing part photoresistance film of metal substrate in step 4, after the metallic circuit layer is electroplated and is completed namely at the metal substrate corresponding Ji Dao of positive formation and pin;
Step 6, the operation of subsides photoresistance film
Complete the metal substrate front of plated metal line layer in step 5 and stick the photoresistance film that can carry out exposure imaging;
Step 7, the positive part photoresistance film of removing of metal substrate
Utilize exposure imaging equipment that step 6 is completed the metal substrate front of pasting the operation of photoresistance film and carry out graph exposure, develop and remove part figure photoresistance film, to expose the positive follow-up needs of metal substrate, carry out the zone that conductive posts is electroplated;
Step 8, plated conductive pillar
Electroplate conductive posts in the zone of the positive removal of metal substrate part photoresistance film in step 7;
Step 9, removal photoresistance film
Remove the photoresistance film of metallic substrate surfaces;
Step 10, load
Carry out the implantation of the first chip at basic island front surface coated conduction or non-conductive bonding material that step 5 forms;
Step 11, metal wire bonding
Carry out the operation of bonding metal wire between the pin of the first chip front side and step 5 formation;
Step 12, epoxy resin plastic packaging
The protection of epoxy resin plastic packaging is carried out in metal substrate front after completing the load routing;
Step 13, epoxy resin surface grind
After completing the epoxy resin plastic packaging, step 12 carries out surface grinding;
Step 14, the operation of subsides photoresistance film
The metal substrate front and back of completing after epoxy resin surface grinds in step 13 sticks the photoresistance film that can carry out exposure imaging;
Part photoresistance film is removed at step 15, the metal substrate back side
Part figure photoresistance film is carried out graph exposure, develops and removes at the metal substrate back side that ginseng utilizes exposure imaging equipment that step 14 is completed the operation of subsides photoresistance film, to expose the follow-up needs in the metal substrate back side, carries out etched zone;
Step 10 six, etching
Chemical etching is carried out in the zone of metal substrate back side removal part photoresistance film in step 15;
Step 10 seven, removal photoresistance film
Remove the photoresistance film of metallic substrate surfaces, the method for removing the photoresistance film adopts chemical medicinal liquid soften and adopt high pressure water washing to get final product;
Step 10 eight, plating anti-oxidant metal layer or coating antioxidant
Remove the photoresistance film in step 10 seven after, anti-oxidant metal layer plating or antioxidant coating are carried out in the exposed metal surface of metallic substrate surfaces;
The step 10 nine, chips of Daoing Installed
Complete the Ji Dao that electroplates anti-oxidant metal layer or coating antioxidant and the pin back side is filled up between Metal Ball and Metal Ball by underfill and chip and Ji Dao, pin between the space upside-down mounting have upside-down mounting that the second chip is arranged;
Step 2 ten, epoxy resin plastic packaging
The protection of epoxy resin plastic packaging is carried out at the metal substrate back side after completing load;
Step 2 11, plant ball
Complete the conductive posts top of electroplating anti-oxidant metal layer or coating antioxidant in step 10 eight and implant the first Metal Ball;
Step 2 12, cutting finished product
The semi-finished product of step 2 11 being completed the epoxy resin plastic packaging carry out cutting operation, make originally in array aggregate mode, to integrate and to contain more than cuttings of plastic-sealed body module of metallic circuit substrate of chip independent, making first is honored as a queen loses three-dimensional systematic chip formal dress encapsulating structure finished product.
2. process of erosion three-dimensional systematic flip-chip bump packaging structure of first being honored as a queen is characterized in that said method comprising the steps of:
Step 1, get metal substrate
Step 2, metallic substrate surfaces preplating copper material
At metallic substrate surfaces preplating one deck copper material,
Step 3, the operation of subsides photoresistance film
Complete metal substrate front and the back side of preplating copper material in step 2 and stick respectively the photoresistance film that can carry out exposure imaging;
Step 4, the positive part photoresistance film of removing of metal substrate
Utilize exposure imaging equipment that step 3 is completed the metal substrate front of pasting the operation of photoresistance film and carry out graph exposure, develop and remove part figure photoresistance film, to expose the positive follow-up needs of metal substrate, carry out the zone that the metallic circuit layer is electroplated;
Step 5, plated metal line layer
Electroplate the metallic circuit layer in the positive zone of removing part photoresistance film of metal substrate in step 4, after the metallic circuit layer is electroplated and is completed namely at the metal substrate corresponding Ji Dao of positive formation and pin;
Step 6, the operation of subsides photoresistance film
Complete the metal substrate front of plated metal line layer in step 5 and stick the photoresistance film that can carry out exposure imaging;
Step 7, the positive part photoresistance film of removing of metal substrate
Utilize exposure imaging equipment that step 6 is completed the metal substrate front of pasting the operation of photoresistance film and carry out graph exposure, develop and remove part figure photoresistance film, to expose the positive follow-up needs of metal substrate, carry out the zone that conductive posts is electroplated;
Step 8, plated conductive pillar
Electroplate conductive posts in the zone of the positive removal of metal substrate part photoresistance film in step 7;
Step 9, removal photoresistance film
Remove the photoresistance film of metallic substrate surfaces;
Step 10, load
Carry out the implantation of the first chip at basic island front surface coated conduction or non-conductive bonding material that step 5 forms;
Step 11, metal wire bonding
Carry out the operation of bonding metal wire between the pin of the first chip front side and step 5 formation;
Step 12, epoxy resin plastic packaging
The protection of epoxy resin plastic packaging is carried out in metal substrate front after completing the load routing;
Step 13, epoxy resin surface grind
After completing the epoxy resin plastic packaging, step 12 carries out surface grinding;
Step 14, the operation of subsides photoresistance film
The metal substrate front and back of completing after epoxy resin surface grinds in step 13 sticks the photoresistance film that can carry out exposure imaging;
Part photoresistance film is removed at step 15, the metal substrate back side
Utilize exposure imaging equipment that step 14 is completed the metal substrate back side of pasting the operation of photoresistance film and carry out graph exposure, develop and remove part figure photoresistance film, to expose the follow-up needs in the metal substrate back side, carry out etched zone;
Step 10 six, etching
Chemical etching is carried out in the zone of metal substrate back side removal part photoresistance film in step 15;
Step 10 seven, removal photoresistance film
Remove the photoresistance film of metallic substrate surfaces;
But the non-conductive glue material of step 10 eight, the green paint of metal substrate back side coating or sensitization
But the coating of the non-conductive glue material of green paint or sensitization is carried out at the metal substrate back side after step 10 seven is removed the photoresistance film;
Step 10 nine, the exposure development of windowing
Window but utilize exposure imaging equipment to carry out exposure imaging to the non-conductive glue material of the green paint of metal substrate back side coating or sensitization, to expose the follow-up needs in the metal substrate back side, carry out the zone that the high-conductive metal layer is electroplated;
Step 2 ten, plating high-conductive metal layer
But high-conductive metal layer on electroplating in the windowed regions of the non-conductive glue material of the green paint in the metal substrate back side or sensitization in step 10 nine;
Step 2 11, plating anti-oxidant metal layer or coating antioxidant
Carry out anti-oxidant metal layer electroplates or the antioxidant coating in the exposed metal surface of metallic substrate surfaces;
The step 2 12, chips of Daoing Installed
Pass through the second chip in the second Metal Ball upside-down mounting in step 2 11 through the conductive posts top of electroplating anti-oxidant metal layer or coating antioxidant, can also can inject underfill in order to fill out between Full Metal Ball and Metal Ball and the space between chip and plastic packaging material under the second chip of Installed;
Step 2 13, epoxy resin plastic packaging
Epoxy resin surface after completing load carries out the protection of epoxy resin plastic packaging again;
Step 2 14, plant ball
Complete in step 2 11 on the high-conductive metal layer of electroplating anti-oxidant metal layer or coating antioxidant and implant the first Metal Ball;
Step 2 15, cutting finished product
The semi-finished product of step 2 14 being completed the epoxy resin plastic packaging carry out cutting operation, make originally in array aggregate mode, to integrate and to contain more than cuttings of plastic-sealed body module of metallic circuit substrate of chip independent, making first is honored as a queen loses three-dimensional systematic chip formal dress encapsulating structure finished product.
3. process of erosion three-dimensional systematic flip-chip bump packaging structure of first being honored as a queen is characterized in that said method comprising the steps of:
Step 1, get metal substrate
Step 2, metallic substrate surfaces preplating copper material
At metallic substrate surfaces preplating one deck copper material;
Step 3, the operation of subsides photoresistance film
Complete metal substrate front and the back side of preplating copper material in step 2 and stick respectively the photoresistance film that can carry out exposure imaging;
Step 4, the positive part photoresistance film of removing of metal substrate
Utilize exposure imaging equipment that step 3 is completed the metal substrate front of pasting the operation of photoresistance film and carry out graph exposure, develop and remove part figure photoresistance film, to expose the positive follow-up needs of metal substrate, carry out the zone that the first metallic circuit layer is electroplated;
Step 5, plating the first metallic circuit layer
Electroplate the first metallic circuit layer in the zone of the positive removal of metal substrate part photoresistance film in step 4;
Step 6, the operation of subsides photoresistance film
Complete the metal substrate front of electroplating the first metallic circuit layer in step 5 and stick the photoresistance film that can carry out exposure imaging;
Step 7, the positive part photoresistance film of removing of metal substrate
Utilize exposure imaging equipment that step 6 is completed the metal substrate front of pasting the operation of photoresistance film and carry out graph exposure, develop and remove part figure photoresistance film, to expose the positive follow-up needs of metal substrate, carry out the zone that the second metallic circuit layer is electroplated;
Step 8, plating the second metallic circuit layer
Electroplate the second metallic circuit layer conduct in order to connect the conductive posts of the first metallic circuit layer and the 3rd metallic circuit layer in the zone of the positive removal of metal substrate part photoresistance film in step 7;
Step 9, removal photoresistance film
Remove the photoresistance film of metallic substrate surfaces;
Step 10, the non-conductive glued membrane of pressing
At the non-conductive glued membrane of the positive pressing one deck of metal substrate;
Step 11, the non-conductive glued membrane of grinding surface
After completing non-conductive glued membrane pressing, step 10 carries out surface grinding;
Step 12, the preliminary treatment of non-conductive glued membrane surface metalation
To the preliminary treatment of metallizing of non-conductive glued membrane surface, its surface attachment last layer metallization macromolecular material or surface roughening are processed;
Step 13, the operation of subsides photoresistance film
Complete metallized metal substrate front and the photoresistance film that can carry out exposure imaging is sticked at the back side in step 12;
Step 14, the positive part photoresistance film of removing of metal substrate
Utilize exposure imaging equipment that step 13 is completed the metal substrate front of pasting the operation of photoresistance film and carry out graph exposure, develop and remove part figure photoresistance film, to expose the positive follow-up needs of metal substrate, carry out etched regional graphics;
Step 15, etching
The etching operation is carried out in zone after metal substrate front photoresistance film in step 14 is windowed;
Step 10 six, removal photoresistance film
Remove the photoresistance film of metallic substrate surfaces;
Step 10 seven, plating the 3rd metallic circuit layer
The metallization pretreatment zone that keeps after etching in metal substrate front in step 15 is electroplated the 3rd metallic circuit layer, namely in the metal substrate front, forms corresponding Ji Dao and pin after the 3rd metallic circuit layer is electroplated and completed;
Step 10 eight, the operation of subsides photoresistance film
Complete the metal substrate front of electroplating the 3rd metallic circuit layer in step 10 seven and stick the photoresistance film that can carry out exposure imaging;
Step 10 nine, the positive part photoresistance film of removing of metal substrate
Utilize exposure imaging equipment that step 10 eight is completed the metal substrate front of pasting the operation of photoresistance film and carry out graph exposure, develop and remove part figure photoresistance film, to expose the positive follow-up needs of metal substrate, carry out the zone that conductive posts is electroplated;
Step 2 ten, plated conductive pillar
Electroplate conductive posts in the zone of the positive removal of metal substrate part photoresistance film in step 10 nine;
Step 2 11, removal photoresistance film
Remove the photoresistance film of metallic substrate surfaces;
Step 2 12, load
Carry out the implantation of the first chip at basic island front surface coated conduction or non-conductive bonding material that step 10 seven forms;
Step 2 13, metal wire bonding
Carry out the operation of bonding metal wire between the pin of the first chip front side and step 5 formation;
Step 2 14, epoxy resin plastic packaging
The protection of epoxy resin plastic packaging is carried out in metal substrate front after completing the load routing;
Step 2 15, epoxy resin surface grind
After completing the epoxy resin plastic packaging, step 2 14 carries out surface grinding;
Step 2 16, the operation of subsides photoresistance film
The metal substrate front and back of completing after epoxy resin surface grinds in step 2 15 sticks the photoresistance film that can carry out exposure imaging;
Part photoresistance film is removed at step 2 17, the metal substrate back side
Utilize exposure imaging equipment that step 2 16 is completed the metal substrate back side of pasting the operation of photoresistance film and carry out graph exposure, develop and remove part figure photoresistance film, to expose the follow-up needs in the metal substrate back side, carry out etched zone;
Step 2 18, etching
Chemical etching is carried out in the zone of metal substrate back side removal part photoresistance film in step 2 17;
Step 2 19, removal photoresistance film
Remove the photoresistance film of metallic substrate surfaces;
Step 3 ten, plating anti-oxidant metal layer or antioxidant coating
Remove the photoresistance film in step 2 19 after, anti-oxidant metal layer plating or antioxidant coating are carried out in the exposed metal surface of metallic substrate surfaces;
The step 3 11, chips of Daoing Installed
Completing steps 30 electroplate the Ji Dao of anti-oxidant metal layers or coating antioxidant and the pin back side is filled up between Metal Ball and Metal Ball by underfill and chip and Ji Dao, pin between the space upside-down mounting the second chip is arranged;
Step 3 12, epoxy resin plastic packaging
The protection of epoxy resin plastic packaging is carried out at the metal substrate back side after completing load;
Step 3 13, plant ball
Complete the conductive posts top of electroplating anti-oxidant metal layer or coating antioxidant in step 3 ten and implant the first Metal Ball;
Step 3 14, cutting finished product
The semi-finished product of step 3 13 being completed the epoxy resin plastic packaging carry out cutting operation, make originally in array aggregate mode, to integrate and to contain more than cuttings of plastic-sealed body module of metallic circuit substrate of chip independent, making first is honored as a queen loses three-dimensional systematic chip formal dress encapsulating structure finished product.
4. a kind of first being honored as a queen according to claim 3 lost the process of three-dimensional systematic flip-chip bump packaging structure, and it is characterized in that: described step 5 ~ step 10 seven repeats repeatedly between step 8 and step 10 eight.
5. erosion three-dimensional systematic flip-chip bump packaging structure of first being honored as a queen, it is characterized in that: it comprises Ji Dao (1) and pin (2), described pin (2) front is provided with conductive posts (3), described Ji Dao (1) is positive just is being equipped with the first chip (4) by conduction or non-conductive bonding material (6), described the first chip (4) positive with pin (2) front between be connected by the first metal wire (5), zone and conductive posts (3) that described Ji Dao (1) and pin (2) are positive, the peripheral zone of the first chip (4) and the first metal wire (5) all is encapsulated with the first plastic packaging material or epoxy resin (9), described the first plastic packaging material or epoxy resin (9) flush with conductive posts (3) top, the surface that described conductive posts (3) is exposed the first plastic packaging material or epoxy resin (9) is provided with anti oxidation layer (11), there is the second chip (8) at described Ji Dao (1) and pin (2) back side by underfill (7) upside-down mounting, described Ji Dao (1) and zone, pin (2) back side and the peripheral zone of the second chip (8) all are encapsulated with the second plastic packaging material or epoxy resin (10), described conductive posts (3) top is provided with the first Metal Ball (17).
6. a kind of first being honored as a queen according to claim 5 lost three-dimensional systematic flip-chip bump packaging structure, and it is characterized in that: between described pin (2) and pin (2), cross-over connection has passive device (14).
7. according to claim 5 or 6 described a kind of first being honored as a queen are lost three-dimensional systematic flip-chip bump packaging structures, and it is characterized in that: there are a plurality of the second chips (8) at described Ji Dao (1) and pin (2) back side by underfill (7) upside-down mounting.
8. according to claim 5 or 6 described a kind of first being honored as a queen are lost three-dimensional systematic flip-chip bump packaging structures, it is characterized in that: the 3rd chip (15) just is being equipped with by conduction or non-conductive bonding material (6) in described the second chip (8) back side, is connected by the second metal wire (16) between described the 3rd chip (15) and pin (2) back side.
9. a kind of first being honored as a queen according to claim 7 lost three-dimensional systematic flip-chip bump packaging structure, it is characterized in that: the 3rd chip (15) just is being equipped with by conduction or non-conductive bonding material (6) in described the second chip (8) back side, is connected by the second metal wire (16) between described the 3rd chip (15) and pin (2) back side.
10. according to claim 5 or 6 described a kind of first being honored as a queen are lost three-dimensional systematic flip-chip bump packaging structures, it is characterized in that: there is the 3rd chip (15) at described pin (2) back side by the 3rd Metal Ball (19) upside-down mounting, and described the 3rd Metal Ball (19) and the 3rd chip (15) are in the inside of the second plastic packaging material or epoxy resin (10).
11. a kind of erosion three-dimensional systematic flip-chip bump packaging structure of first being honored as a queen according to claim 7, it is characterized in that: there is the 3rd chip (15) at described pin (2) back side by the 3rd Metal Ball (19) upside-down mounting, and described the 3rd Metal Ball (19) and the 3rd chip (15) are in the inside of the second plastic packaging material or epoxy resin (10).
12. a kind of erosion three-dimensional systematic flip-chip bump packaging structure of first being honored as a queen according to claim 8, it is characterized in that: there is the 3rd chip (15) at described pin (2) back side by the 3rd Metal Ball (19) upside-down mounting, and described the 3rd Metal Ball (19) and the 3rd chip (15) are in the inside of the second plastic packaging material or epoxy resin (10).
13. a kind of erosion three-dimensional systematic flip-chip bump packaging structure of first being honored as a queen according to claim 9, it is characterized in that: there is the 3rd chip (15) at described pin (2) back side by the 3rd Metal Ball (19) upside-down mounting, and described the 3rd Metal Ball (19) and the 3rd chip (15) are in the inside of the second plastic packaging material or epoxy resin (10).
14. a kind of erosion three-dimensional systematic flip-chip bump packaging structure of first being honored as a queen according to claim 10, it is characterized in that: described the 3rd chip (15) adopts passive device (14) to replace, and described the 3rd Metal Ball (19) and passive device (14) are in the inside of the second plastic packaging material or epoxy resin (10).
15. erosion three-dimensional systematic flip-chip bump packaging structure of first being honored as a queen, it is characterized in that: it comprises Ji Dao (1) and pin (2), described pin (2) front is provided with conductive posts (3), described Ji Dao (1) is positive just is being equipped with the first chip (4) by conduction or non-conductive bonding material (6), described the first chip (4) positive with pin (2) front between be connected by the first metal wire (5), described Ji Dao (1) and the positive zone of pin (2) and conductive posts (3), the first chip (4) and the first metal wire (5) outer peripheral areas all are encapsulated with the first plastic packaging material or epoxy resin (9), described the first plastic packaging material or epoxy resin (9) flush with conductive posts (3) top, there is the second chip (8) at described conductive posts (3) top by the second Metal Ball (18) upside-down mounting, described conductive posts (3) top area and the second chip (8) outer peripheral areas all are encapsulated with the second plastic packaging material or epoxy resin (10), described Ji Dao (1) and pin (2) back side are provided with high-conductive metal layer (12), described high-conductive metal layer (12) and high-conductive metal layer (12) but between be filled with green paint or the non-conductive glue material of sensitization (13), described high-conductive metal layer (12) but expose green paint or the surface of the non-conductive glue material of sensitization (13) is provided with anti oxidation layer (11), be provided with the first Metal Ball (17) on described high-conductive metal layer (12).
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WO2015017959A1 (en) * 2013-08-06 2015-02-12 Jiangsu Changjiang Electronics Technology Co., Ltd First-packaged and later-etched three-dimensional flip-chip system-in-package structure and processing method therefor
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