CN103390542A - Forming method of MIM (metal-insulator-metal) capacitor - Google Patents
Forming method of MIM (metal-insulator-metal) capacitor Download PDFInfo
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- CN103390542A CN103390542A CN2013103177314A CN201310317731A CN103390542A CN 103390542 A CN103390542 A CN 103390542A CN 2013103177314 A CN2013103177314 A CN 2013103177314A CN 201310317731 A CN201310317731 A CN 201310317731A CN 103390542 A CN103390542 A CN 103390542A
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Abstract
A forming method of an MIM capacitor comprises the steps as follows: providing a substrate; removing water vapor on the surface of the substrate in a temperature range from 100 DEG C to 200 DEG C; forming an AlCu layer on the substrate after the water vapor is removed; forming a dielectric layer on the AlCu layer; and forming a metal layer on the dielectric layer. The formed MIM capacitor has higher average breakdown voltage values, and the breakdown voltage values in the position of the MIM capacitor have small difference.
Description
Technical field
The present invention relates to semiconductor applications, special design is to a kind of formation method of MIM capacitor.
Background technology
In semiconductor device, capacitor can be divided into polycrystalline silicon-on-insulator-polysilicon (PIP) capacitor and metal-insulator-metal type (MIM) capacitor according to structure.MIM capacitor often is used in the semiconductor device of wireless frequency, and this is because in the PIP capacitor, the electrode for capacitors that is formed by polysilicon can oxidation occur in use, causes the electric capacity of PIP capacitor to reduce; And MIM capacitor has Low ESR, and can, because loss causes parasitic capacitance, can not have higher electric capacity.
In prior art, with reference to figure 1, the formation method of traditional MIM capacitor comprises:
With reference to figure 1, substrate 1 is provided, form the first metal layer 2 in described substrate 1;
Then, form dielectric layer 3 on described the first metal layer 2, and form the second metal level 4 on described dielectric layer 3.
With reference to figure 2, graphical described the second metal level 4, dielectric layer 3 and the first metal layer 2, form MIM capacitor in described substrate 1.
In specific embodiment, described the first metal layer 2 comprises the AlCu layer of bottom and the titanium nitride layer on upper strata.
With reference to figure 3, Fig. 3 is the schematic diagram of deposition apparatus; Described deposition apparatus is used to form the first metal layer of MIM capacitor, and the black arrow in Fig. 3 has represented substrate circulation order between each chamber in deposition apparatus.
The method that forms the first metal layer 2 of MIM capacitor comprises:
Described substrate 1 described take off the interior removal steam in vapour chamber 21 after, taken out by the first mechanical arm 25, and send in channel lumens 22.
Then, by the second mechanical arm 27, described substrate 1 is transferred to AlCu deposition chamber 23 from channel lumens 22, deposit forms the AlCu layer in described substrate 1.
After forming the AlCu layer in described substrate 1, taken out by described the second mechanical arm 27, and send in titanium nitride deposition chamber 24.Form titanium nitride layer in the interior deposit of described titanium nitride deposition chamber 24, complete the preparation of described the first metal layer 2.
After forming described the first metal layer 2, described substrate 1 is changed in cooling chamber 26 and is lowered the temperature by described titanium nitride deposition chamber 24 by described the second mechanical arm 27; After cooling, by described the first mechanical arm 25, described substrate 1 is sent by described import and export 20.
Described substrate 1 is completed the preparation of MIM capacitor after sending by described import and export 20 by subsequent technique.The performance of described MIM capacitor is assessed by the breakdown voltage value on average voltage breakdown value and diverse location, only has the average voltage breakdown value to reach predetermined value, and the MIM capacitor that the breakdown voltage value on diverse location differs less just can meet the demands.
The MIM capacitor average voltage breakdown value that is prepared by said method is low, and the breakdown voltage value at MIM capacitor diverse location place differs greatly.
Summary of the invention
The problem that the present invention solves is that the MIM capacitor average voltage breakdown value that forms in prior art is low, and the breakdown voltage value at MIM capacitor diverse location place differs greatly.
For addressing the above problem, the invention provides a kind of formation method of MIM capacitor, comprising: substrate is provided; In 100-200 ℃ of temperature range, remove the steam of described substrate surface; After removing described steam, form the AlCu layer in described substrate; Form dielectric layer on described AlCu layer; Form metal level on described dielectric layer.
Optionally, also be formed with titanium nitride layer between described AlCu layer and described dielectric layer.
Optionally, the thickness of described AlCu layer is greater than or equal to 1 μ m.
Optionally, described dielectric layer is silicon nitride layer or boron nitride layer.
Optionally, described metal level is titanium nitride layer.
Compared with prior art, technical scheme of the present invention has the following advantages:
The technical program adopts in 100-200 ℃ of temperature range, remove the steam of described substrate surface, make the temperature of substrate low with respect to the base reservoir temperature (250 ℃) of prior art, be conducive to obtain the smooth AlCu layer of upper surface, final formation average voltage breakdown value is high, and breakdown voltage value everywhere differs very little MIM capacitor.
The present invention also provides a kind of formation method of MIM capacitor, comprising: substrate is provided; Remove the steam of described substrate surface; After removing described steam, below cooling described substrate to 200 ℃; After cooling described substrate, form the AlCu layer in described substrate; Form dielectric layer on described AlCu layer; Form metal level on described dielectric layer.
Optionally, also be formed with titanium nitride layer between described AlCu layer and described dielectric layer.
Optionally, the thickness of described AlCu layer is greater than or equal to 1 μ m.
Optionally, described dielectric layer is silicon nitride layer or boron nitride layer.
Optionally, comprise below cooling described substrate to 200 ℃: below cooling described substrate to 100 ℃.
Compared with prior art, technical scheme of the present invention has the following advantages:
The technical program is after the steam of removing described substrate surface, cooling described substrate, the temperature of described substrate is cooled to below 200 ℃, and then form the AlCu layer in cooled described substrate, because the temperature of described substrate is low than the base reservoir temperature of prior art (250 ℃), the technical program is conducive to obtain the smooth AlCu layer of upper surface, finally form the average voltage breakdown value high, and the breakdown voltage value at diverse location place differs very little MIM capacitor.
Description of drawings
Fig. 1 and Fig. 2 are the cross-sectional view of each production phase of formation method of MIM capacitor in prior art;
Fig. 3 is the deposition apparatus schematic diagram;
Fig. 4 to Figure 10 is the cross-sectional view of each production phase of formation method of MIM capacitor in first embodiment of the invention;
Figure 11 to Figure 12 is the puncture voltage box-shaped figure of the MIM capacitor of distinct methods formation.
Embodiment
With reference to figure 3, experiment is found, if described substrate 1 described take off the interior removal steam in vapour chamber 21 after, send in channel lumens 22, directly by the second mechanical arm 27, AlCu deposition chamber 23 is sent in described substrate 1 again and carried out the AlCu deposit, substrate 1 does not stop in this process, can cause the MIM capacitor average voltage breakdown that finally obtains value too low, and the breakdown voltage value at MIM capacitor diverse location place differs greatly.
In box-shaped figure shown in Figure 11, abscissa represents the numbering of MIM capacitor, has namely altogether formed 25 MIM capacitor; Ordinate represents the breakdown voltage value of MIM capacitor.Wherein only be numbered 01 MIM capacitor in forming process, substrate described take off the interior removal steam in vapour chamber 21 after, send in channel lumens 22, more directly by the second mechanical arm 27, AlCu deposition chamber 23 sent in described substrate and carried out the AlCu deposit; The MIM capacitor of other numberings is in forming process, substrate described take off the interior removal steam in vapour chamber 21 after, send in channel lumens 22, substrate after the about 1min of the interior stop of channel lumens 22, then is sent described substrate into AlCu deposition chamber 23 by the second mechanical arm 27 and is carried out the AlCu deposit.Can find, be numbered 01 the MIM capacitor average voltage breakdown value average voltage breakdown value lower than the MIM capacitor of other labels, and the breakdown voltage value that is numbered 01 MIM capacitor diverse location place differs greatly.And then infer, if it is large to obtain the average voltage breakdown value, and the breakdown voltage value at diverse location place differs very little MIM capacitor, must make substrate at the about 1min of the interior stop of channel lumens 22 in forming process, then carries out the AlCu deposit.When the interior stop of channel lumens 22, the temperature of substrate is reduced.
In order to determine that base reservoir temperature is the main cause that affects MIM capacitor average voltage breakdown value and breakdown voltage value distribution, with reference to Figure 12, abscissa represents the numbering of MIM capacitor, has namely altogether formed 6 MIM capacitor; Ordinate represents the breakdown voltage value of MIM capacitor.Wherein be numbered 26 MIM capacitor, in forming process, substrate is directly carried out the AlCu deposit after removing steam; Be numbered 27 MIM capacitor, in forming process, substrate after the about 1min of the interior stop of channel lumens 22, then is carried out the AlCu deposit after removing steam; Be numbered 28 MIM capacitor, in forming process, substrate send into AlCu deposition chamber 23, but substrate just starts to carry out the AlCu deposit after the about 1min of the interior placement of AlCu deposition chamber 23 after removing steam; Be numbered 29 MIM capacitor, in forming process, substrate after the interior stop of channel lumens 22 40s, then is carried out the AlCu deposit after removing steam; Be numbered 30 MIM capacitor, in forming process, substrate is at 150 ℃ of temperature vapor-removing that goes down, more directly carries out the AlCu deposit; Be numbered 31 MIM capacitor, in forming process, substrate is at 330 ℃ of temperature vapor-removing that goes down, more directly carries out the AlCu deposit.
Compare the average voltage breakdown value that is numbered 26 MIM capacitor with the MIM capacitor that is numbered 27 less than normal, and the breakdown voltage value at diverse location place differs greatly.The average voltage breakdown value that is numbered 27,28,29 and 30 MIM capacitor is larger, and the breakdown voltage value at diverse location place differs very little.Compare with the MIM capacitor that is numbered 30, the breakdown voltage value that is numbered 31 MIM capacitor diverse location place differs greatly.
Can find by above-mentioned experiment:
During deposit AlCu layer, the temperature of substrate is too high, can cause the average voltage breakdown value of the MIM capacitor that forms too little, and the breakdown voltage value at diverse location place differs greatly.
Further experiment is found, the flatness of AlCu layer upper surface is relevant with the temperature of described substrate 1, when the temperature of described substrate 1 is higher, easily make the AlCu layer upper surface of formation uneven, AlCu layer upper surface unevenness causes the average voltage breakdown value of the MIM capacitor that forms to reduce, and the breakdown voltage value at MIM capacitor diverse location place differs greatly.
In prior art, the described vapour chamber 21 of taking off, in order to remove the steam of described substrate 1 adsorption, forms the smooth AlCu layer of upper surface to guarantee deposit in described substrate 1, and the described interior temperature in vapour chamber 21 of taking off is generally greater than 250 ℃.After removing steam, the temperature of described substrate 1 is also 250 ℃ of left and right, if described substrate 1 is sent in channel lumens 22, directly by the second mechanical arm 27, described substrate 1 is sent in AlCu deposition chamber 23 again, at this moment, the temperature of described substrate 1 does not obtain cooling, maintains 250 ℃ of left and right yet.Form the AlCu layer in the substrate 1 of high-temperature like this, can make the AlCu layer upper surface of formation uneven, and then make the MIM capacitor average voltage breakdown value that finally obtains very low, and the breakdown voltage value at MIM capacitor diverse location place differs greatly.
For this reason, the invention provides a kind of formation method of MIM capacitor, can obtain the average voltage breakdown value high, and the breakdown voltage value at diverse location place differs very little MIM capacitor.
, for above-mentioned purpose of the present invention, feature and advantage can more be become apparent, below in conjunction with accompanying drawing, specific embodiments of the invention are described in detail.
Term in the present invention " flatness " refers to, a plane is parallel error amount with respect to the horizontal plane, and error amount is less, and the flatness on this plane is better; Otherwise error amount is larger, and the flatness on this plane is poorer.
The present invention represents that the numerical value of scope comprises end value, and as 100-200 ℃, expression, greater than 100 ℃, less than the arbitrary temp of 200 ℃, and also comprises 100 ℃ and 200 ℃ of these two end values.
The first embodiment
The present embodiment provides a kind of formation method of MIM capacitor, comprising:
, with reference to figure 4, provide substrate 110.
Described substrate 110 is Semiconductor substrate, as silicon substrate, germanium substrate, germanium silicon substrate or other Semiconductor substrate known in the art.In specific embodiment, be formed with the semiconductor device (not shown) in described substrate 110, for example have the metal oxide semiconductor device of grid, source electrode and drain electrode.
In specific embodiment, described substrate 110 also comprises the layer of dielectric material that is positioned on described Semiconductor substrate, and the material of described layer of dielectric material can be the dielectric materials known in the art such as silica, silicon nitride.The effect of layer of dielectric material is to prevent from forming electric current between the MIM capacitor of substrate 110 and follow-up formation.
Then, in 100-200 ℃ of temperature range, remove the steam on described substrate 110 surfaces.
If steam is contained on described substrate 110 surfaces, described steam can worsen the flatness of the follow-up AlCu layer upper surface that forms in described substrate 110.
With reference to figure 3, the method for removing the steam on described substrate 110 surfaces is:
Described substrate 110 is sent in deposition apparatus from importing and exporting 20.
Then, the first mechanical arm 25 is sent into described substrate 110 to take off in vapour chamber 21; Described temperature of taking off in vapour chamber 21 is 100-200 ℃.Described temperature of taking off in vapour chamber 21 is in order to guarantee to remove the steam on described substrate 110 surfaces greater than 100 ℃, less than 200 ℃, is to affect the flatness of AlCu layer upper surface for the temperature that makes described substrate 110 is unlikely to Tai Gao., because the boiling point of water is 100 ℃,, if take off temperature in vapour chamber 21 less than 100 ℃, just be difficult to remove the steam on substrate 110 surfaces.If take off the interior temperature in vapour chamber 21 greater than 200 ℃, be difficult to make in substrate 110 form the smooth AlCu layer of upper surface, and then it is high to be difficult to obtain the average voltage breakdown value, and the breakdown voltage value at diverse location place differ very little MIM capacitor.
Because the flatness of AlCu layer upper surface is relevant with the temperature of described substrate 110, when the temperature of described substrate 110 is higher, easily make the AlCu layer air spots of formation smooth, and then cause the average voltage breakdown value of the MIM capacitor that forms on the low side, and the breakdown voltage value at MIM capacitor diverse location place differs larger.The present embodiment adopts in 100-200 ℃ of temperature range, remove the steam on described substrate 110 surfaces, make the temperature of substrate 110 low with respect to the base reservoir temperature (250 ℃ of left and right) of prior art, be conducive to obtain the smooth AlCu layer of upper surface, form finally that the average voltage breakdown value is high, the breakdown voltage value at diverse location place differs very little MIM capacitor.
In specific embodiment, remove time of steam on described substrate 110 surfaces greater than 15s.Described temperature of taking off in vapour chamber 21 is lower, for the steam with described substrate 110 surfaces, removes totally, must extend the time of the steam of removing described substrate 110 surfaces.For example, take off temperature in vapour chamber 21 while being 150 ℃, the time of removing described substrate 110 surperficial steam is 20s; Take off temperature in vapour chamber 21 while being 200 ℃, the time of removing described substrate 110 surperficial steam is 15s.
, because the time that extends the described steam of removal can cause process cycle to lengthen, in order to take into account the described time of taking off the temperature in vapour chamber 21 and removing described steam, should rationally be set the described time of taking off the interior temperature in vapour chamber 21 and removing described steam.For example, while adopting the temperature of taking off in vapour chamber 21 to be 150 ℃, the time of removing described substrate 110 surperficial steam is 20s.
, with reference to figure 5, after removing described steam, form AlCu layer 121 in described substrate 110.
With reference to figure 3, after removing described steam, described substrate 110 is taken off the interior taking-up in vapour chamber 21 by described the first mechanical arm 25 from described, and delivers in channel lumens 22.
Then, described substrate 110, and is delivered in AlCu deposition chamber 23 from the interior taking-up of described channel lumens 22 by the second mechanical arm 27, carries out the AlCu deposit.
In specific embodiment, the method that forms AlCu layer 121 is physical vapor deposition (PVD), uses Ar plasma strike target, makes the metallic atom in target break away from target because of shock, the metallic atom that breaks away from target deposits to described substrate 110 surfaces, forms AlCu layer 121.
In specific embodiment, the power of plasma Ar is 6-15kW, and the flow velocity of Ar is 25-100sccm(mark condition milliliter per minute), the time of physical vapour deposition (PVD) is 10-50s.Form the AlCu layer 121 that thickness is greater than or equal to 1 μ m.
In other embodiments, the method for formation AlCu layer 121 also can be the additive methods known in the art such as ald, chemical vapour deposition (CVD).
In general, the thickness of described AlCu layer 121 is larger, and the flatness of described AlCu layer 121 upper surface is more responsive to the temperature of described substrate 110.That is to say, if will form the good AlCu layer 121 of upper surface flatness, the thickness of described AlCu layer 121 is larger, must make the temperature of described substrate 110 lower.For example when formation thickness was the AlCu layer 121 of 1 μ m, the temperature of substrate 110 just can obtain the good AlCu layer 121 of upper surface flatness in the time of 150 ℃; But when formation thickness was the AlCu layer 121 of 4 μ m, the temperature of substrate 110 need to just can obtain the good AlCu layer 121 of upper surface flatness in time below 100 ℃.
, with reference to figure 6, in specific embodiment, also form titanium nitride layer 122 on described AlCu layer 121, described AlCu layer 121 and the common pole plate as capacitor of described titanium nitride layer 122.
With reference to figure 3, after forming described AlCu layer 121, described the second mechanical arm 27, from the interior taking-up of described AlCu deposition chamber 23, is then put into titanium nitride deposition chamber 24 with described substrate 110, carries out the titanium nitride deposit, forms titanium nitride layer 122 on described AlCu layer 121.
In specific embodiment, form the method for titanium nitride layer 122 for being physical vapor deposition (PVD), use Ar and N
2The plasma strike target, break away from target with the titanium nitride molecules strike in target, deposits to described AlCu layer 121 surface, and then form titanium nitride layer 122.
In specific embodiment, plasma Ar and N
2Power be 6-15kW, the flow velocity of Ar is 25-100sccm, N
2Flow velocity be 50-150sccm, the time of physical vapour deposition (PVD) is 10-50s.
In other embodiments, the method for formation titanium nitride layer 122 also can be the additive methods known in the art such as ald, chemical vapour deposition (CVD).
After forming described titanium nitride layer 122, the second mechanical arm 27, from the interior taking-up of described titanium nitride deposition chamber 24, is sent into described substrate 110 in cooling chamber 26; Then the first mechanical arm 25 is transferred to import and export 20 with described substrate 110 in cooling chamber 26, and described deposition apparatus is shifted out in described substrate 110.
, with reference to figure 7, form dielectric layer 130 on described titanium nitride layer 122.
In specific embodiment, described dielectric layer 130 is silicon nitride layer or boron nitride layer.
The method that forms described dielectric layer 130 can be the conventional deposition process such as chemical vapour deposition (CVD), physical vapour deposition (PVD) or ald.
, with reference to figure 8, form metal level 140 on described dielectric layer 130.
In specific embodiment, described metal level 140 is titanium nitride layer.
The method that forms described metal level 140 can be with reference to the method that forms titanium nitride layer 122.
, with reference to figure 9, form patterned mask layer 150 on described metal level 140.
In specific embodiment, described patterned mask layer 150 is patterned photoresist, and described patterned mask layer 150 has defined the position of MIM capacitor.
With reference to Figure 10, take described patterned mask layer 150 as mask, the described metal level 140 of etching, dielectric layer 130, titanium nitride layer 122 and AlCu layer 121, form MIM capacitor, and remove described patterned mask layer 150.
In the present embodiment, the upper surface flatness of the AlCu layer 121 of formation is good, and the average voltage breakdown value of the MIM capacitor that obtains is high, and the breakdown voltage value at diverse location place differs very little.
The second embodiment
The present embodiment provides a kind of formation method of MIM capacitor, comprising:
, with reference to figure 4, provide substrate 110.
This step can be with reference to the correlation step in the first embodiment.
Then, remove the steam on described substrate 110 surfaces.
The temperature of removing the steam on described substrate 110 surfaces can be greater than or equal to 250 ℃.
Other information of this step can be with reference to the correlation step in the first embodiment.
After removing the steam on described substrate 110 surfaces, cooling described substrate is below 110 to 200 ℃.
With reference to figure 3, after removing the steam on described substrate 110 surfaces, the first mechanical arm 25 is transferred to described substrate 110 in channel lumens 22 from taking off vapour chamber 21.The step of cooling described substrate below 110 to 200 ℃ can be completed in described channel lumens 22, namely allow described substrate 110 stay for some time in described channel lumens 22.Because the temperature in described channel lumens 22 are room temperature, in specific embodiment, in time of the interior cooling described substrate 110 of described channel lumens 22 greater than 10s.In the present embodiment, be 30-50s cooling time.
Perhaps, described substrate 110 is interior not cooling in described channel lumens 22, and the second mechanical arm 27 is transferred to described substrate 110 in described AlCu deposition chamber 23 in described channel lumens 22.Before to described substrate 110 surface deposition AlCu, described substrate 110 is cooled to below 200 ℃ in described AlCu deposition chamber 23, and then at described substrate 110 surface depositions, forms the AlCu layer.
In the present embodiment, in order further to improve the flatness of the AlCu layer upper surface of follow-up formation, can cooling described substrate below 110 to 100 ℃.
With reference to figure 5, after cooling described substrate 110, AlCu layer 121 on described substrate 110 surfaces.
During due to formation AlCu layer 121, the temperature of described substrate 110 (below 200 ℃) is low than the base reservoir temperature of prior art (250 ℃), the technical program is conducive to obtain the smooth AlCu layer 121 of upper surface, final formation average voltage breakdown value is high, and the breakdown voltage value at diverse location place differs very little MIM capacitor.
This step can be with reference to the correlation step in the first embodiment.
, with reference to figure 6, form titanium nitride layer 122 on AlCu layer 121.
This step can be with reference to the correlation step in the first embodiment.
, with reference to figure 7, form dielectric layer 130 on described titanium nitride layer 122.
This step can be with reference to the correlation step in the first embodiment.
, with reference to figure 8, form metal level 140 on described dielectric layer 130.
This step can be with reference to the correlation step in the first embodiment.
, with reference to figure 9, form patterned mask layer 150 on described metal level 140.
This step can be with reference to the correlation step in the first embodiment.
With reference to Figure 10, take described patterned mask layer 150 as mask, the described metal level 140 of etching, dielectric layer 130, titanium nitride layer 122 and AlCu layer 121, form MIM capacitor, and remove described patterned mask layer 150.
In the present embodiment, the upper surface flatness of the AlCu layer 121 of formation is good, and the average voltage breakdown value of the MIM capacitor that obtains is high, and the breakdown voltage value at diverse location place differs very little.
Although the present invention discloses as above, the present invention not is defined in this.Any those skilled in the art, without departing from the spirit and scope of the present invention, all can make various changes or modifications, so protection scope of the present invention should be as the criterion with the claim limited range.
Claims (10)
1. the formation method of a MIM capacitor, is characterized in that, comprising:
Substrate is provided;
In 100-200 ℃ of temperature range, remove the steam of described substrate surface;
After removing described steam, form the AlCu layer in described substrate;
Form dielectric layer on described AlCu layer;
Form metal level on described dielectric layer.
2. the formation method of MIM capacitor as claimed in claim 1, is characterized in that, also is formed with titanium nitride layer between described AlCu layer and described dielectric layer.
3. the formation method of MIM capacitor as claimed in claim 1, is characterized in that, the thickness of described AlCu layer is greater than or equal to 1 μ m.
4. the formation method of MIM capacitor as claimed in claim 1 or 2, is characterized in that, described dielectric layer is silicon nitride layer or boron nitride layer.
5. the formation method of MIM capacitor as claimed in claim 1, is characterized in that, described metal level is titanium nitride layer.
6. the formation method of a MIM capacitor, is characterized in that, comprising:
Substrate is provided;
Remove the steam of described substrate surface;
After removing described steam, below cooling described substrate to 200 ℃;
After cooling described substrate, form the AlCu layer in described substrate;
Form dielectric layer on described AlCu layer;
Form metal level on described dielectric layer.
7. the formation method of MIM capacitor as claimed in claim 6, is characterized in that, also is formed with titanium nitride layer between described AlCu layer and described dielectric layer.
8. the formation method of MIM capacitor as claimed in claim 6, is characterized in that, the thickness of described AlCu layer is greater than or equal to 1 μ m.
9., as the formation method of claim 6 or 7 described MIM capacitor, it is characterized in that, described dielectric layer is silicon nitride layer or boron nitride layer.
10. the formation method of MIM capacitor as claimed in claim 6, is characterized in that, comprises below cooling described substrate to 200 ℃: below cooling described substrate to 100 ℃.
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| CN1699624A (en) * | 2004-05-20 | 2005-11-23 | 台湾积体电路制造股份有限公司 | Low temperature method for metal deposition |
| KR20070099993A (en) * | 2006-04-06 | 2007-10-10 | 삼성전자주식회사 | Method for fabricating capacitor of semiconductor device |
| CN102586737A (en) * | 2012-03-09 | 2012-07-18 | 上海先进半导体制造股份有限公司 | Physical vapor deposition method of aluminum-copper film |
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| CN1255747A (en) * | 1998-11-27 | 2000-06-07 | 日本电气株式会社 | Mfg. method of semiconductor device |
| CN1466157A (en) * | 2002-06-28 | 2004-01-07 | ����ʿ�뵼������˾ | Method for forming MIM capacitor |
| US6822283B2 (en) * | 2002-07-11 | 2004-11-23 | Taiwan Semiconductor Manufacturing Co., Ltd | Low temperature MIM capacitor for mixed-signal/RF applications |
| US20040266180A1 (en) * | 2003-06-24 | 2004-12-30 | Dauch Elizabeth A. | Tungsten plug corrosion prevention method using water |
| CN1699624A (en) * | 2004-05-20 | 2005-11-23 | 台湾积体电路制造股份有限公司 | Low temperature method for metal deposition |
| KR20070099993A (en) * | 2006-04-06 | 2007-10-10 | 삼성전자주식회사 | Method for fabricating capacitor of semiconductor device |
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