CN103388121A - Hybrid preparation process of high-precision metal mask plate - Google Patents

Hybrid preparation process of high-precision metal mask plate Download PDF

Info

Publication number
CN103388121A
CN103388121A CN2012101398178A CN201210139817A CN103388121A CN 103388121 A CN103388121 A CN 103388121A CN 2012101398178 A CN2012101398178 A CN 2012101398178A CN 201210139817 A CN201210139817 A CN 201210139817A CN 103388121 A CN103388121 A CN 103388121A
Authority
CN
China
Prior art keywords
electroforming
exposure
mask plate
galvanic deposit
technique
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN2012101398178A
Other languages
Chinese (zh)
Other versions
CN103388121B (en
Inventor
魏志凌
高小平
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kunshan Power Stencil Co Ltd
Original Assignee
Kunshan Power Stencil Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kunshan Power Stencil Co Ltd filed Critical Kunshan Power Stencil Co Ltd
Priority to CN201210139817.8A priority Critical patent/CN103388121B/en
Priority to PCT/CN2013/075226 priority patent/WO2013166951A1/en
Priority to KR1020147031429A priority patent/KR101911416B1/en
Priority to JP2015510623A priority patent/JP5969114B2/en
Priority to TW102116297A priority patent/TWI513080B/en
Publication of CN103388121A publication Critical patent/CN103388121A/en
Application granted granted Critical
Publication of CN103388121B publication Critical patent/CN103388121B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41C—PROCESSES FOR THE MANUFACTURE OR REPRODUCTION OF PRINTING SURFACES
    • B41C1/00—Forme preparation
    • B41C1/14—Forme preparation for stencil-printing or silk-screen printing
    • B41C1/142—Forme preparation for stencil-printing or silk-screen printing using a galvanic or electroless metal deposition processing step
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41C—PROCESSES FOR THE MANUFACTURE OR REPRODUCTION OF PRINTING SURFACES
    • B41C1/00—Forme preparation
    • B41C1/14—Forme preparation for stencil-printing or silk-screen printing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41C—PROCESSES FOR THE MANUFACTURE OR REPRODUCTION OF PRINTING SURFACES
    • B41C1/00—Forme preparation
    • B41C1/14—Forme preparation for stencil-printing or silk-screen printing
    • B41C1/147—Forme preparation for stencil-printing or silk-screen printing by imagewise deposition of a liquid, e.g. from an ink jet; Chemical perforation by the hardening or solubilizing of the ink impervious coating or sheet
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • C23F1/04—Chemical milling
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/28—Acidic compositions for etching iron group metals
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Abstract

The invention discloses a preparation process of a high-precision metal mask plate. The process comprises the steps that: a substrate with a certain thickness is prepared through nickel alloy electric casting, wherein the substrate is provided with through holes; recesses with a certain depth are etched on one side of the mask substrate with an etching process, wherein the opening size on the etched surface is larger than that on the non-etched surface. The hole walls are rounded, and tapered. The metal mask plate obtained through the hybrid process of electric casting and etching has the advantages of low cost, high opening quality, high opening precision, and the like. With the process, the thickness of effective mask is reduced, and a vapor deposition film-forming rate during a mask plate vapor deposition process is improved.

Description

A kind of mixing manufacture technique of high-precision metal mask plate
Technical field
The present invention relates to the manufacture craft of a kind of evaporation with mask plate, belong to material preparation and manufacture field, be specifically related to the preparation technology of a kind of OLED evaporation with the high precision mask plate.
Background technology
Now, along with the development of Multimedia technology and the arriving of information society, more and more higher to the requirement of flat-panel monitor performance.Three kinds of technique of display newly occurred in recent years: plasma display, Field Emission Display and display of organic electroluminescence (be called for short OLED) have all made up the deficiency of cathode tube and liquid-crystal display to a certain extent.Wherein, display of organic electroluminescence have from main light emission, low-voltage direct-current drive, entirely solidify, a series of advantage such as visual angle is wide, color is abundant, compare with liquid-crystal display, display of organic electroluminescence does not need backlight, visual angle is large, power is low, and its response speed can reach 1000 times of liquid-crystal display, and its manufacturing cost is but lower than the liquid-crystal display of equal resolving power.Therefore, display of organic electroluminescence has broad application prospects, and is counted as the utmost point and composes one of following flat panel display of competitive power.
Top light emitting organic display (OLED) because of its have all solid state, active illuminating, high-contrast, ultra-thin, reduce power consumption, wide without visual angle restriction, fast response time, antidetonation, working range, be easy to realize flexible the demonstration and the plurality of advantages such as 3D demonstrations, become gradually the following 20 years the fastest novel technique of display of growth.
Conventional top light emitting OLED structure is the same with other OLED structures, anode (the first electrode), negative electrode (the second electrode) and the organic luminous layer between anode and negative electrode, consists of.The luminescence mechanism of OLED and process are to inject respectively electronics and hole from yin, yang the two poles of the earth, and transmit in the electronics and the hole that are injected in organic layer, and compound in luminescent layer, thereby stimulated luminescence layer molecule produces the singlet exciton, singlet exciton attenuation and luminous.At present, the anode of existing bottom-emission OLED device greatly mainly with Indium sesquioxide-Xi (ITO) as starting material, to form electrode, film is single-layer membrane structure with radio frequency sputtering method plated film.Top light emitting OLED device plates one deck reflecting layer again on transparent anode ITO.But generally speaking, utilize the radio frequency sputtering method to make ito anode, be subject to the bad impact of technology controlling and process factor and cause its surface irregularity, and then cause its surface to produce most advanced and sophisticated material or thrust.In addition, the process of high-temperature calcination and recrystallize also can provide the chance of the direct directive negative electrode in hole, thereby leakage current is increased, and affects the luminous efficiency of OLED.In addition, the electrode resistance of making of ITO is larger, easily increases heat production and power consumption.
Summary of the invention
The present invention is intended to solve at least one of technical problem that exists in prior art.For this reason, one object of the present invention is to propose the manufacture craft of a kind of evaporation with mask plate, can effectively solve the mask plate that the method for the chemical milling that traditional technology adopts prepares and have the problems such as the difficult demoulding, low precision.
The present invention relates to the manufacture craft of a kind of evaporation with mask plate, this kind technique comprises electroforming (galvanic deposit) technique and etch process.
Specifically, this manufacture craft comprises electroforming at least one times (galvanic deposit) and single face etching at least one times.
Specifically, this manufacture craft is for first carrying out electroforming (galvanic deposit) technique, then carries out etch process.
Specifically, the concrete steps that electroforming (galvanic deposit) technique comprises are as follows:
A, core pre-treatment: with core oil removing, pickling, sandblast, to remove the oil stain impurity on surface, and surface finish is smooth;
B, pad pasting: mandrel surface is carried out pad pasting;
C, exposure: make the exposure of figure open area,, in order to the unexposed area dry film is removed by development, stay the part of exposure to make the protective membrane of follow-up electroforming step;
D, surface development: unexposed portion in step of exposure c is developed, stay the part of exposure to make the protective membrane of follow-up electroforming step;
E, electroforming (galvanic deposit): core is immersed in electrotyping bath and electroforming material deposited to without the dry film zone;
F, take off film: the exposure dry film of not removing in developing procedure is scrubbed and taken off except clean by the immersion of taking off film liquid;
G, substrate aftertreatment: with substrate together with core oil removing, pickling, air-dry.
Specifically, the concrete steps that comprise of etch process are as follows:
A, two-sided pad pasting: mandrel surface and substrate surface are carried out pad pasting;
B, double-sided exposure: make recess region regional exposure in addition,, in order to the unexposed area dry film is removed by development, stay the part of exposure to make the protective membrane of subsequent;
C, surface development: unexposed portion in described step of exposure is developed, stay the part of exposure to make the protective membrane of subsequent;
D, single face etching: adopt etching method by etching solution, the surface of electroforming exposure of substrates to be corroded;
E, take off film: the exposure dry film of not removing in developing procedure is scrubbed and taken off except clean by the immersion of taking off film liquid;
F, aftertreatment: with the mask plate after etching together with core oil removing, pickling, air-dry;
G, peel off: mask plate is stripped down from core;
H, detection: the mask plate under peeling off carries out quality examination;
I, assembling: will detect qualified mask plate and be fixed on the mask plate framework by any one mode in welding, glue, nut piece, and form mask assembly;
J, finished product detection: the mask assembly that will assemble carries out quality examination;
K, packing: will detect qualified mask plate component Package casing, the finished product shipment.
More specifically, the concrete technology parameter of electroforming process is as follows:
(1) pre-treatment parameter: oil removing time: 1～2min
Pickling time: 1～2min
The sandblast time: 1～2min
Blasting pressure: 2.0kg/cm 2
(2) pad pasting parameter: temperature: 110 ℃
Speed: 1.4m/min
Pressure: 0.6MPa
(3) exposure parameter: energy: 100mj～600mj
Power: 8w
(4) photographic parameter: 0.7%～0.9%Na 2CO 3Solution
(5) activation parameter: soak time: 8min～10min,
Activation temperature: 25～35 ℃,
Activation solution concentration: 1～2mol/L
(6) electroforming process parameter: pH 3.0～3.8
35～40 ℃ of temperature
Current density 1～1.7A/dm 2
(7) electroforming solution forms: single nickel salt 225～255g/L
Nickelous chloride 35～45g/L
Ferrous sulfate 36～43g/L
(8) additive of electroforming solution: stablizer 0.5～5ml/L
Wetting agent 0.5～5ml/L
Agent 0.5～5ml/L walks
Specifically, the cathode base that uses in electroforming (galvanic deposit) is stainless steel 201,202,301,304,420J1, any one in 420J2; Anode adopts any one in anode nickel block, anode nickel plates.
Specifically, the substrate thickness that electroforming obtains is 10～50 μ m, and electroforming material is magnetic nickel or nickel alloy material.Nickel alloy material is a kind of in Rhometal, nickel cobalt (alloy), Perminvar.
Specifically, the sectional elevation of electroforming formation opening is tapered.
Specifically, it is 0.01～0.1mm that electroforming forms opening size, and preferably, it is 0.01～0.05mm that electroforming forms the opening optimum size.
Specifically, the parameter of etch process is:
(1) the concrete composition of etching solution: iron trichloride 160～230g/L
Hydrochloric acid 1～4g/L
Clorox 0.1～1 g/L
(2) concrete technology parameter: proportion 1.4～1.5
pH 1.4～2.0
45～55 ℃ of temperature
Pressure 45～50kg/cm 2
Specifically, etch depth is 50%～100% electroforming substrate thickness, and preferably, etch depth the best is 100% electroforming substrate thickness.
Specifically, the etched recesses edge overlaps with evaporation face edge of opening, and the etched recesses sectional elevation is a bowl type, and the section angle of etched recesses is 30 o～50 o
directly adopt the method for chemical milling to erode away the required opening of evaporation on the Invar alloy sheet material than traditional technology, first electroforming is the opening that makes of etched hybrid technique again, hole wall is smooth, dimensional precision is high, the evaporation face opening size precision that electroforming makes reaches ± 1 μ m, positional precision reaches ± 5 μ m, the groove that etching makes forms bowl-shape hole wall, be combined with the opening that electroforming makes, make the opening that meets the evaporation requirement, the steep-taper that bowl-shape hole wall has, avoided hole wall blocking deposition material in the evaporate process, improved the evaporation film-forming rate, and smooth electroforming hole wall is than the demoulding of changing one's clothes of etching hole wall, can the material on evaporation not impacted.
Description of drawings
Above-mentioned and/or additional aspect of the present invention and advantage are from obviously and easily understanding becoming the description of embodiment in conjunction with following accompanying drawing.
The open profile figure of Fig. 1 for adopting two-sided etch process to make:
Wherein, adopt two-sided etching to corrode from the invar sheet material two sides respectively, the section that forms is the calabash shaped opening, but owing to being etched to, subtract into technique, and there is the side corrosive nature, make the opening size l1 of sheet surface greater than predetermined size l2, the bad control of dimensional precision, there is deviation in size, and the perforated wall that etching forms is coarse rough.T1 is the ito surface etch depth, and t2 is the evaporation facet etch degree of depth.
Fig. 2 is the open profile figure that electroforming process of the present invention is made:
Wherein, electroforming thickness is t'z, and l'1 is the ito surface opening size, and 1 is the evaporation face, and 2 are ito surface (during electroforming and core be close to).Because electroforming is additive process, and be that galvanic deposit, opening are that metal ion is attached to photosensory membrane or the photoresists clone forms, therefore the perforated wall smooth surface, and the opening size precision is high, and l'1 controls well, t'z also can add and subtract arbitrarily as required, from etch process, is subjected to the restriction of invar sheet material model different.
Fig. 3 is that the present invention continues the open profile figure that etching is made on the basis of electroforming:
Wherein, 1 is the evaporation face, and 2 is ito surface, and 3 is etched recesses, and l'1 is the ito surface opening size, is effective evaporation opening thickness, and t'2 is the degree of depth of etched recesses, and t'1+t'2=t'z, α are the section angle of etched recesses.t'2=（50%～100%） t'z
Fig. 4 is the stereographic map of high-precision metal mask plate:
Wherein, 1 is the evaporation face, and 3 is etched recesses, and 4 is high closely metal mask plate.
Embodiment
Below describe embodiments of the invention in detail, the example of described embodiment is shown in the drawings, and wherein same or similar label represents same or similar element or the element with identical or similar functions from start to finish.Be exemplary below by the embodiment that is described with reference to the drawings, only be used for explaining the present invention, and can not be interpreted as limitation of the present invention.
The present invention adopt first electroforming more etched hybrid technique produce the mask plate of opening with tapering.
1, the step of electroforming process is as follows:
Core pre-treatment → single face pad pasting → single face exposure → surface development → electroforming (galvanic deposit) → take off film → substrate aftertreatment.
Concrete steps are as follows:
Stainless steel core 304 is carried out the early stage of oil removing, pickling and sandblast and process, remove its surperficial dirt and impurity, increase its surfaceness.Single face pastes photosensory membrane or applies photoresists on the stainless steel 304 core; photosensory membrane or the photoresists exposure in opening figure zone will to be formed by scan exposure; as the electroforming protective membrane; unexposed photosensory membrane or photoresists wash away by alkali lye in follow-up developing procedure, core is exposed and form follow-up electroforming to want the deposit metallic material zone.Core after developing is put into electrotyping bath, adjust the electroforming parameter, the electroforming metal deposition of material is arrived without the dry film zone.
The concrete technology parameter is as follows:
(1) pre-treatment parameter: oil removing time: 1min
Pickling time: 1min
The sandblast time: 1min
Blasting pressure: 2.0kg/cm 2
(2) pad pasting parameter: temperature: 110 ℃
Speed: 1.4m/min
Pressure: 0.6MPa
(3) exposure parameter: energy: 300mj
Power: 8w
(4) photographic parameter: 0.7%Na2CO3 solution
(5) activation parameter: soak time: 8min
Activation temperature: 25 ℃
Activation solution concentration is: 1mol/L
(6) electroforming process parameter:
pH 3.4
35 ℃ of temperature
Current density 1.4A/dm 2
(7) electroforming solution forms: single nickel salt 240g/L
Nickelous chloride 35g/L
Ferrous sulfate 40g/L
(8) additive of electroforming solution:
Stablizer 2ml/L
Wetting agent 3ml/L
Agent 3ml/L walks
Above-mentioned electroforming parameter makes the electroforming substrate that thickness is 50 μ m, and has patterns of openings, and the opening hole wall is smooth, and dimensional precision is high, and the evaporation face opening size precision that electroforming makes reaches ± 1 μ m, and positional precision reaches ± 5 μ m.Smooth electroforming hole wall is than the easier demoulding of etching hole wall, can the material on evaporation do not impacted
2, the step of etch process is as follows:
Two-sided pad pasting → double-sided exposure → surface development → single face etching → wash → take off film → aftertreatment → peel off → detect → assemble → finished product detection → packing
Concrete steps are as follows:
Together with core, Double-face adhesive photosensory membrane or coating photoresists, expose photosensory membrane or the photoresists of core one side fully with above-mentioned electroforming gained substrate; The substrate one side wants etched zone to keep institute, and other regional exposures, the photosensory membrane of exposure or photoresists are as protective membrane in follow-up etch process, and protective substrate and core are not subject to the corrosion of etching solution; Unexposed photosensory membrane or photoresists are removed by alkali lye, made and will cruelly spill by etched substrate surface, by corrosive liquid, corrode, by controlling etching transfer rate or etchant concentration, realize the etched degree of depth of want.
On the opening basis that original electroforming forms, the groove of etching certain depth, it is bowl-shape that groove walls is.
The concrete technology parameter is as follows:
(1) the concrete composition of etching solution is as follows:
Iron trichloride 200g/L
Hydrochloric acid 2g/L
Clorox 0.2 g/L
(2) etch process parameters
Proportion 1.45
pH 1.4
55 ℃ of temperature
Pressure 45kg/cm 2
It is 40 μ m that above-mentioned etching parameter makes depth of groove, and namely effectively evaporation opening thickness is 10 μ m.The groove that etching makes forms bowl-shape hole wall, with the opening that electroforming makes, is combined, make the opening that meets the evaporation requirement, and the steep-taper that bowl-shape hole wall has has avoided hole wall in the evaporate process to the blocking of deposition material, and has improved the evaporation film-forming rate.
Although illustrated and described embodiments of the invention, those having ordinary skill in the art will appreciate that: in the situation that do not break away from principle of the present invention and aim can be carried out multiple variation, modification, replacement and modification to these embodiment, scope of the present invention is limited by claim and equivalent thereof.

Claims (18)

1. the mixing manufacture technique of a high-precision metal mask plate, this kind technique comprises electroforming (galvanic deposit) technique and etch process.
2. mixing manufacture technique according to claim 1, is characterized in that, comprises electroforming at least one times (galvanic deposit) and single face etching at least one times.
3. mixing manufacture technique according to claim 1, is characterized in that, first carries out electroforming (galvanic deposit), then carry out etching.
4. electroforming according to claim 1 (galvanic deposit) technique, the steps include: core pre-treatment → single face pad pasting → single face exposure → surface development → electroforming (galvanic deposit) → take off film → substrate aftertreatment.
5. etch process according to claim 1, the steps include: two-sided pad pasting → double-sided exposure → surface development → single face etching → wash → take off film → aftertreatment → peel off → detect → assemble → finished product detection → packing.
6. electroforming according to claim 4 (galvanic deposit) technique, is characterized in that, the concrete technology step is:
A, core pre-treatment: with core oil removing, pickling, sandblast, to remove the oil stain impurity on surface, and surface finish is smooth;
B, pad pasting: mandrel surface is carried out pad pasting;
C, exposure: make the exposure of figure open area,, in order to the unexposed area dry film is removed by development, stay the part of exposure to make the protective membrane of follow-up electroforming step;
D, surface development: unexposed portion in step of exposure c is developed, stay the part of exposure to make the protective membrane of follow-up electroforming step;
E, electroforming (galvanic deposit): core is immersed in electrotyping bath, electroforming material is deposited to without the dry film zone;
F, take off film: the exposure dry film of not removing in developing procedure is scrubbed and taken off except clean by the immersion of taking off film liquid;
G, substrate aftertreatment: with substrate together with core oil removing, pickling, air-dry.
7. etch process according to claim 5, is characterized in that, the concrete technology step is:
A, two-sided pad pasting: mandrel surface and substrate surface are carried out pad pasting;
B, double-sided exposure: make recess region regional exposure in addition,, in order to the unexposed area dry film is removed by development, stay the part of exposure to make the protective membrane of subsequent;
C, surface development: unexposed portion in described step of exposure is developed, stay the part of exposure to make the protective membrane of subsequent;
D, single face etching: adopt etching method by etching solution, the surface of electroforming exposure of substrates to be corroded;
E, take off film: the exposure dry film of not removing in developing procedure is scrubbed and taken off except clean by the immersion of taking off film liquid;
F, aftertreatment: with the mask plate after etching together with core oil removing, pickling, air-dry;
G, peel off: mask plate is stripped down from core;
H, detection: the mask plate under peeling off carries out quality examination;
I, assembling: will detect qualified mask plate and be fixed on the mask plate framework by any one mode in welding, glue, nut piece, and form mask assembly;
J, finished product detection: the mask assembly that will assemble carries out quality examination;
K, packing: will detect qualified mask plate component Package casing, the finished product shipment.
8. electroforming according to claim 4 (galvanic deposit) technique, is characterized in that, the cathode base that uses in electroforming (galvanic deposit) is stainless steel 201,202,301,304,420J1, any one in 420J2; Anode adopts any one in anode nickel block, anode nickel plates.
9. electroforming according to claim 4 (galvanic deposit) technique, is characterized in that, the electroforming substrate thickness is 10～50 μ m, and electroforming material is magnetic nickel or nickel alloy material.
10. nickel alloy material according to claim 9, is characterized in that, nickel alloy material is a kind of in Rhometal, nickel cobalt (alloy), Perminvar.
11. electroforming according to claim 4 (galvanic deposit) technique, is characterized in that, the sectional elevation of electroforming formation opening is tapered.
12. electroforming according to claim 4 (galvanic deposit) technique, is characterized in that, it is 0.01～0.1mm that electroforming forms opening size.
13. electroforming according to claim 12 forms opening size, it is characterized in that, it is 0.01～0.05mm that electroforming forms the opening optimum size.
14. etch process according to claim 5, is characterized in that, etch depth is 50%～100% electroforming substrate thickness.
15. etch depth according to claim 14, is characterized in that, etch depth the best is 100% electroforming substrate thickness.
16. etch process according to claim 5, is characterized in that, the etched recesses edge overlaps with evaporation face edge of opening.
17. etch process according to claim 5, is characterized in that, the etched recesses sectional elevation is a bowl type.
18. etch process according to claim 5, is characterized in that, the section angle of etched recesses is 30 o～50 o
CN201210139817.8A 2012-05-08 2012-05-08 A kind of mixing manufacture craft of high-precision metal mask plate Expired - Fee Related CN103388121B (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
CN201210139817.8A CN103388121B (en) 2012-05-08 2012-05-08 A kind of mixing manufacture craft of high-precision metal mask plate
PCT/CN2013/075226 WO2013166951A1 (en) 2012-05-08 2013-05-07 Mixed fabricating technique for high precision metal mask plate
KR1020147031429A KR101911416B1 (en) 2012-05-08 2013-05-07 Mixed fabricating technique for high precision metal mask plate
JP2015510623A JP5969114B2 (en) 2012-05-08 2013-05-07 Mixed metal mask manufacturing process
TW102116297A TWI513080B (en) 2012-05-08 2013-05-08 A mixed manufacturing method of a metal mask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201210139817.8A CN103388121B (en) 2012-05-08 2012-05-08 A kind of mixing manufacture craft of high-precision metal mask plate

Publications (2)

Publication Number Publication Date
CN103388121A true CN103388121A (en) 2013-11-13
CN103388121B CN103388121B (en) 2017-07-11

Family

ID=49532539

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201210139817.8A Expired - Fee Related CN103388121B (en) 2012-05-08 2012-05-08 A kind of mixing manufacture craft of high-precision metal mask plate

Country Status (5)

Country Link
JP (1) JP5969114B2 (en)
KR (1) KR101911416B1 (en)
CN (1) CN103388121B (en)
TW (1) TWI513080B (en)
WO (1) WO2013166951A1 (en)

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103882375A (en) * 2014-03-12 2014-06-25 京东方科技集团股份有限公司 Mask plate and manufacturing method thereof
WO2016101396A1 (en) * 2014-12-23 2016-06-30 深圳市华星光电技术有限公司 Method for fabricating mask plate
CN106033802A (en) * 2015-03-17 2016-10-19 上海和辉光电有限公司 Mask plate used for evaporation and manufacturing method thereof
CN106119773A (en) * 2016-08-03 2016-11-16 京东方科技集团股份有限公司 Mask plate and manufacture method, evaporation mask plate assembly and manufacture method thereof
CN106350769A (en) * 2016-09-22 2017-01-25 常州友机光显电子科技有限公司 Metal shadow mask and preparation method thereof
WO2017045122A1 (en) * 2015-09-15 2017-03-23 Applied Materials, Inc. A shadow mask for organic light emitting diode manufacture
CN107164788A (en) * 2017-05-23 2017-09-15 上海天马有机发光显示技术有限公司 Mask plate and preparation method thereof
CN108251868A (en) * 2018-02-10 2018-07-06 胡泮 A kind of separation method of instrument board slush mold nickel shell and resin core model
CN108630832A (en) * 2018-03-13 2018-10-09 阿德文泰克全球有限公司 Metal shadow mask and preparation method thereof
CN109898104A (en) * 2019-02-20 2019-06-18 合肥永淇智材科技有限公司 A kind of FMM electroforming motherboard production method of conical mouths
WO2019184265A1 (en) * 2018-03-30 2019-10-03 昆山国显光电有限公司 Mask plate and display panel
CN110923622A (en) * 2015-04-24 2020-03-27 Lg伊诺特有限公司 Deposition mask
CN111508349A (en) * 2019-01-31 2020-08-07 武汉华星光电半导体显示技术有限公司 Display panel, manufacturing method of display panel and electronic equipment
CN112606544A (en) * 2020-11-19 2021-04-06 浙江硕克科技有限公司 Metal plate and processing technology thereof
CN113276536A (en) * 2021-05-14 2021-08-20 常州天禄显示科技有限公司 Metal printing template with huge micro-structure holes and manufacturing method thereof
CN116825752A (en) * 2023-08-29 2023-09-29 江西兆驰半导体有限公司 Wafer and printing method thereof

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102134363B1 (en) * 2013-09-10 2020-07-16 삼성디스플레이 주식회사 Method for manufacturing metal mask and metal mask using the same
CN108701776B (en) * 2016-02-16 2020-09-22 Lg伊诺特有限公司 Metal plate, mask for deposition and method for manufacturing the same
CN105714248A (en) * 2016-04-01 2016-06-29 昆山允升吉光电科技有限公司 Manufacturing method for high-precision composite mask plate assembly for evaporation
KR101884160B1 (en) * 2016-05-23 2018-07-31 도판 인사츠 가부시키가이샤 A method for manufacturing a thick metal mask, a method for manufacturing a thick metal mask,
CN109219897A (en) * 2016-05-24 2019-01-15 应用材料公司 Shadow mask with plasma resistant coating
CN108728790A (en) * 2017-04-21 2018-11-02 苏州苏大维格光电科技股份有限公司 The manufacturing method of AMOLED metal mask plates
CN107699854B (en) * 2017-11-10 2019-09-17 京东方科技集团股份有限公司 Mask assembly and its manufacturing method
CN110484864B (en) * 2019-09-29 2021-09-10 京东方科技集团股份有限公司 Sub-mask and mask
TWI810563B (en) * 2021-05-14 2023-08-01 達運精密工業股份有限公司 Mask manufacturing method and mask manufacturing device
TWI822510B (en) * 2022-12-09 2023-11-11 達運精密工業股份有限公司 Metal mask and the method to produce metal mask
CN116511842B (en) * 2023-04-27 2023-10-03 寰采星科技(宁波)有限公司 Manufacturing method of precise metal mask plate and precise metal mask plate

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4615781A (en) * 1985-10-23 1986-10-07 Gte Products Corporation Mask assembly having mask stress relieving feature
KR100490534B1 (en) * 2001-12-05 2005-05-17 삼성에스디아이 주식회사 Mask frame assembly for thin layer vacuum evaporation of Organic electro luminescence device
JP2005314787A (en) 2004-03-31 2005-11-10 Kenseidou Kagaku Kogyo Kk Method for producing metal mask
JP2005322354A (en) * 2004-05-11 2005-11-17 Canon Inc Method for manufacturing optical master disk and method for manufacturing stamper
JP2006152396A (en) * 2004-11-30 2006-06-15 Sony Corp Method for manufacturing metal mask, mask of artwork master for electroforming and artwork master
CN100590232C (en) * 2005-11-14 2010-02-17 昆山允升吉光电科技有限公司 Mask electro-forming method for vaporization coating of organic light-emitting display
JP2007276046A (en) * 2006-04-06 2007-10-25 Seiko Epson Corp Structure manufacturing method
JP4677363B2 (en) 2006-04-07 2011-04-27 九州日立マクセル株式会社 Vapor deposition mask and manufacturing method thereof
KR100971753B1 (en) * 2007-11-23 2010-07-21 삼성모바일디스플레이주식회사 Mask assembly for thin film vapor deposition of flat panel display
KR20100026655A (en) * 2008-09-01 2010-03-10 삼성모바일디스플레이주식회사 Mask for thin film deposition and manufacturing method of oled using the same
CN101413138B (en) * 2008-09-20 2010-09-08 大连理工大学 Method for improving accuracy of size of micro-electroforming cast layer
JP2011088107A (en) * 2009-10-26 2011-05-06 Seiko Epson Corp Method for manufacturing of filter, and filter
KR101182440B1 (en) * 2010-01-11 2012-09-12 삼성디스플레이 주식회사 Mask frame assembly for thin film deposition
CN103203975B (en) * 2012-01-16 2015-09-23 昆山允升吉光电科技有限公司 The preparation method of electroforming mask plate anchor point

Cited By (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103882375A (en) * 2014-03-12 2014-06-25 京东方科技集团股份有限公司 Mask plate and manufacturing method thereof
CN103882375B (en) * 2014-03-12 2016-03-09 京东方科技集团股份有限公司 A kind of mask plate and preparation method thereof
WO2016101396A1 (en) * 2014-12-23 2016-06-30 深圳市华星光电技术有限公司 Method for fabricating mask plate
CN106033802B (en) * 2015-03-17 2018-06-29 上海和辉光电有限公司 A kind of evaporation mask plate and preparation method thereof
CN106033802A (en) * 2015-03-17 2016-10-19 上海和辉光电有限公司 Mask plate used for evaporation and manufacturing method thereof
CN110923622B (en) * 2015-04-24 2021-12-03 Lg伊诺特有限公司 Deposition mask
CN110923622A (en) * 2015-04-24 2020-03-27 Lg伊诺特有限公司 Deposition mask
WO2017045122A1 (en) * 2015-09-15 2017-03-23 Applied Materials, Inc. A shadow mask for organic light emitting diode manufacture
TWI745299B (en) * 2015-09-15 2021-11-11 美商應用材料股份有限公司 A shadow mask for organic light emitting diode manufacture
CN108026628A (en) * 2015-09-15 2018-05-11 应用材料公司 Shadow mask for Organic Light Emitting Diode manufacture
CN108026628B (en) * 2015-09-15 2020-09-25 应用材料公司 Shadow mask for organic light emitting diode fabrication
CN106119773A (en) * 2016-08-03 2016-11-16 京东方科技集团股份有限公司 Mask plate and manufacture method, evaporation mask plate assembly and manufacture method thereof
US10934613B2 (en) 2016-08-03 2021-03-02 Boe Technology Group Co., Ltd. Mask plate, mask plate assembly including mask plate and method for manufacturing same
CN106119773B (en) * 2016-08-03 2018-10-26 京东方科技集团股份有限公司 Mask plate and its manufacturing method, vapor deposition mask plate component and its manufacturing method
CN106350769B (en) * 2016-09-22 2019-03-01 常州友机光显电子科技有限公司 A kind of metal shadow mask and preparation method thereof
CN106350769A (en) * 2016-09-22 2017-01-25 常州友机光显电子科技有限公司 Metal shadow mask and preparation method thereof
CN107164788A (en) * 2017-05-23 2017-09-15 上海天马有机发光显示技术有限公司 Mask plate and preparation method thereof
CN108251868B (en) * 2018-02-10 2018-12-04 胡泮 A kind of separation method of instrument board slush mold nickel shell and resin core model
CN108251868A (en) * 2018-02-10 2018-07-06 胡泮 A kind of separation method of instrument board slush mold nickel shell and resin core model
CN108630832A (en) * 2018-03-13 2018-10-09 阿德文泰克全球有限公司 Metal shadow mask and preparation method thereof
US11066738B2 (en) 2018-03-30 2021-07-20 Kunshan Go-Visionox Opto-Electronics Co., Ltd. Mask plates and display panels
WO2019184265A1 (en) * 2018-03-30 2019-10-03 昆山国显光电有限公司 Mask plate and display panel
EP3640364A4 (en) * 2018-03-30 2020-10-07 Kunshan Go-Visionox Opto-Electronics Co., Ltd. Mask plate and display panel
CN111508349A (en) * 2019-01-31 2020-08-07 武汉华星光电半导体显示技术有限公司 Display panel, manufacturing method of display panel and electronic equipment
CN111508349B (en) * 2019-01-31 2022-03-08 武汉华星光电半导体显示技术有限公司 Display panel, manufacturing method of display panel and electronic equipment
CN109898104A (en) * 2019-02-20 2019-06-18 合肥永淇智材科技有限公司 A kind of FMM electroforming motherboard production method of conical mouths
CN112606544A (en) * 2020-11-19 2021-04-06 浙江硕克科技有限公司 Metal plate and processing technology thereof
CN113276536A (en) * 2021-05-14 2021-08-20 常州天禄显示科技有限公司 Metal printing template with huge micro-structure holes and manufacturing method thereof
CN116825752A (en) * 2023-08-29 2023-09-29 江西兆驰半导体有限公司 Wafer and printing method thereof
CN116825752B (en) * 2023-08-29 2024-02-09 江西兆驰半导体有限公司 Wafer and printing method thereof

Also Published As

Publication number Publication date
KR101911416B1 (en) 2018-10-24
TW201347267A (en) 2013-11-16
CN103388121B (en) 2017-07-11
JP2015518524A (en) 2015-07-02
TWI513080B (en) 2015-12-11
KR20150021914A (en) 2015-03-03
JP5969114B2 (en) 2016-08-10
WO2013166951A1 (en) 2013-11-14

Similar Documents

Publication Publication Date Title
CN103388121A (en) Hybrid preparation process of high-precision metal mask plate
CN104593722B (en) The preparation method of mask plate
CN100590232C (en) Mask electro-forming method for vaporization coating of organic light-emitting display
KR102474454B1 (en) Deposition mask manufacturing method and deposition mask
KR20200137032A (en) Deposition mask, method of manufacturing deposition mask and metal plate
CN103589995A (en) Production method for mask plate
CN110165084A (en) A kind of array substrate and preparation method thereof, display panel and display device
JP2011023717A (en) Method for etching see-through thin film solar module
CN105590957A (en) Organic light-emitting display device based on ink-jet printing technology and manufacturing method thereof
CN103589997A (en) Evaporation mask plate
CN104164647B (en) A kind of manufacture craft of mask plate
TW201735418A (en) Deposition mask, method for producing deposition mask and method for producing organic semiconductor device
JP5441663B2 (en) Multilayer metal mask
CN104780710A (en) PCB (Printed circuit board) and manufacturing method thereof
JP2019157262A (en) Metal shadow mask and manufacturing method thereof
CN203569175U (en) Mask plate and mask assembly
CN103205672B (en) A kind of preparation technology of the evaporation mask plate for being easy to welding
TWI825368B (en) Method of manufacturing metal mask
CN104931137A (en) Terahertz resonator plasma chip and preparation method thereof
CN103205697A (en) Vapor deposition mask plate and method for producing same
KR101274155B1 (en) Method of fabricating metal mask
CN103589996A (en) Mask plate
CN103589993A (en) Manufacturing method of evaporation mask plate
JP2013077809A (en) Method for manufacturing substrate and method for manufacturing wiring board
CN108251794A (en) The post-processing approach and mask plate of mask plate

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
PP01 Preservation of patent right

Effective date of registration: 20190808

Granted publication date: 20170711

PP01 Preservation of patent right
PD01 Discharge of preservation of patent

Date of cancellation: 20220808

Granted publication date: 20170711

PD01 Discharge of preservation of patent
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20170711

Termination date: 20190508

CF01 Termination of patent right due to non-payment of annual fee