CN104931137A - Terahertz resonator plasma chip and preparation method thereof - Google Patents
Terahertz resonator plasma chip and preparation method thereof Download PDFInfo
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Abstract
The invention provides a terahertz resonator plasma chip preparation method comprising the following nine steps: silicon substrate cleaning, SiO2 layer plating, pre-coating, pre-baking, aligned exposure and development, post-baking, corrosion, photoresist coating removing, and metal film plating. The machining technology for machining a periodic structure in a silicon material is simplified, the realization of mass production is facilitated, the traditional alternately reciprocating silicon etching process is solved, and the smoothness of the structure is improved greatly. According to a terahertz resonator plasma chip prepared by the method, the silicon material of a finished structure is plated with a metal film creatively, so that the whole structure can be equivalent to a metal plasma microstructure terahertz chip, and the problem that the silicon material cannot excite terahertz surface wave is solved.
Description
Technical field
The invention belongs to THz wave chip field, be specifically related to a kind of Terahertz resonant cavity type plasma chip and preparation method thereof.
Background technology
Terahertz (THz) ripple is the electromagnetic wave between microwave and far infrared, have a wide range of applications in biomedicine, safety monitoring, nondestructive detecting, uranology, spectrum and the field such as imaging technique and information science, therefore, study Terahertz to have great significance.In recent years, along with the development of ultrafast laser technique, that the generation of terahertz pulse is had is stable, excitation source reliably, makes people to study THz wave.
Surface Terahertz groove structure can transmit Terahertz surface wave, has important application at Terahertz integrated circuit and Terahertz sensing chip field.But exciting of the processing of groove structure and Terahertz surface wave, is still the difficult problem hindering THz wave technical development.2008, the people such as Zhu delivered the method for machined grooves structure on metal on Optics Express, and due to needs light laser ablation, difficulty of processing and cost are very high, can not meet industrialized requirement.Afterwards, Robert Bosch company utilizes alternately reciprocating technique to propose a kind of dark silicon etching method, although the processing of groove structure becomes relatively easy, but because silicon materials are semiconductor materials, the surface wave transmission in Terahertz plasma chip can not be excited, meanwhile, the smoothness of silica-based groove that this processes goes out can not meet propagation requirement.
Summary of the invention
The present invention is for solving the problem and carrying out, by providing a kind of Terahertz resonant cavity type plasma chip and preparation method thereof, both simplify the processing technology of process-cycle structure in silicon materials, solve again the difficult problem that silicon materials can not excite Terahertz surface wave.
Present invention employs following technical scheme:
The preparation method of Terahertz resonant cavity type plasma chip provided by the invention, has such feature, comprises the following steps:
Step one, cleaning silicon chip
Ultrasound wave is adopted to select deionized water 5 ~ 15min, methyl alcohol 10 ~ 20min, acetone 20 ~ 40min, methyl alcohol 5 ~ 15min, deionized water 5 ~ 10min to clean successively;
Step 2, plating SiO
2layer
Silicon chip after the cleaning obtained in step one is positioned on coating machine falsework, carries out vacuumizing process, be evacuated to vacuum tightness and be less than 7 × 10
-4pa, then starts to plate SiO
2film, the plated film time is 0.5 to 5 hour, obtains being coated with SiO
2the silicon chip of layer;
Step 3, linging
What step 2 obtained is coated with SiO
2the silicon chip of layer is placed in baking oven 25 ~ 35min that temperature is 2000 ~ 2200 DEG C, then takes out silicon chip and places 4 ~ 6min, start to adopt positive glue to SiO when the temperature of silicon chip and room temperature are more or less the same
2layer surface is carried out static state and is dripped glue, obtains the silicon chip with photoresist coating;
Step 4, front baking
The silicon chip with photoresist coating in step 3 is placed in baking oven 2 ~ 4min that temperature is 90 ~ 110 DEG C;
Step 5, aims at, exposes and development
Accurately locate on the silicon substrate surface of the mask with required figure in step 4, exposure 70 ~ 72s, by required Graphic transitions on photoresist coating, then develop 1 ~ 3min, removed by photosensitive positive glue, photoresist coating demonstrates required figure;
Step 6, rear baking
The silicon chip obtained in step 5 is placed in baking oven 2 ~ 4min that temperature is 110 ~ 130 DEG C, for strengthening photoresist coating and described SiO
2the adhesion of interlayer;
Step 7, corrosion
The described SiO that silicon substrate surface in the HF damping fluid removal step six utilizing the volume ratio of HF and water to be 1:6 exposes
2layer, completes the pre-service to silicon chip, more pretreated silicon chip to be positioned over volume ratio be KOH:H
2corrode 3 ~ 10min in the corrosive liquid of O:IPA=3:6:1, corrosion temperature is 75 ~ 85 DEG C, is transferred to by required figure on the silicon chip in step 2 from described photoresist coating;
Step 8, removes photoresist coating
Silicon chip in step 7 is placed in acetone and anhydrous alcohol volume ratio is in the mixed solution of 2:1, ultrasonic cleaning 3min, deionized water rinsing is placed on that concentration is 98% sulfuric acid, hydrogen peroxide, deionized water volume ratio are in the solution of 2:1:1, ultrasonic cleaning 3min, use washed with de-ionized water again after taking-up, remove photoresist coating;
Step 9, metal-coated membrane
Silicon chip in step 8 is installed in vacuum evaporation plating machine, with vacuum pump evacuation, makes the vacuum tightness in evaporator reach 1.3 × 10
-2~ 1.3 × 10
-3pa, heating crucible makes highly purified tinsel dissolve and flash to gaseous state, and gaseous metal particulate is in silicon chip surface deposition, through cooling reduction i.e. formation one deck metal level of light continuously.
The preparation method of Terahertz resonant cavity type plasma chip provided by the invention, can also have such feature: in step 3, adopts positive glue AZp4620 to carry out static state and drips glue.
The preparation method of Terahertz resonant cavity type plasma chip provided by the invention, can also have such feature: in step 9, metal film is aluminium film, and the thickness of aluminium film is 200 ~ 500nm.
The preparation method of Terahertz resonant cavity type plasma chip provided by the invention, can also have such feature: in step 9, and metallic aluminium dissolves and flashes to gaseous aluminum at the temperature of 1200 ~ 1400 DEG C.
Further, present invention also offers a kind of Terahertz resonant cavity type plasma chip, the structural sheet of chip is followed successively by from top to bottom:
Metal level; SiO
2layer; And Si layer.Wherein, chip is provided with at least one groove, the bottom land of groove is arranged in Si layer, and groove surfaces is metal level, and the incident light that metal level is injected in groove coupling produces surface plasma excimer, constitutes the plasmon structures layer of chip.
Terahertz resonant cavity type plasma chip provided by the invention, can also have such feature: the shape of the xsect of groove is " C " font, and bottom land is " V " font.
Invention effect and effect
The invention provides a kind of Terahertz resonant cavity type plasma chip and preparation method thereof, owing to having plated layer of metal film on the silicon materials carrying out structure, make total can be equivalent to metal plasma microstructure Terahertz chip, solve the difficult problem that silicon materials can not excite Terahertz surface wave, method process-cycle structure in silicon materials simultaneously owing to adopting photoetching and wet etching to combine, both the processing technology of process-cycle structure in silicon materials had been simplified, more be conducive to realizing batch production, solve again traditional alternately reciprocating silicon etching process, substantially increase the smooth property of structure.
Accompanying drawing explanation
Fig. 1 is the process flow diagram of the preparation method of Terahertz resonant cavity type plasma chip of the present invention;
Fig. 2 is the sectional view of Terahertz resonant cavity type plasma chip of the present invention;
Fig. 3 (a) is the vertical view of Terahertz resonant cavity type plasma chip of the present invention;
Fig. 3 (b) is the vertical view of groove of the present invention.
Embodiment
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is described.
Fig. 1 is the process flow diagram of the preparation method of the Terahertz resonant cavity type plasma chip of the present embodiment.
Below by way of three embodiments, Fig. 1 is described.
Embodiment one
A preparation method for Terahertz resonant cavity type plasma chip, comprises the following steps:
Step one, cleaning silicon chip
Ultrasound wave is adopted to select following solvent to clean successively: deionized water 5min, methyl alcohol 10min, acetone 20min, methyl alcohol 5min, deionized water 5min, twice;
Step 2, plating SiO
2layer
Silicon chip after the cleaning obtained in step one is positioned on coating machine falsework, carries out vacuumizing process, be evacuated to vacuum tightness and be less than 7 × 10
-4pa, then starts to plate SiO
2film, the plated film time is 0.5 hour, obtains being coated with SiO
2the silicon chip of layer;
Step 3, linging
What step 2 obtained is coated with SiO
2the silicon chip of layer is placed in the baking oven 35min that temperature is 2000 DEG C, then takes out silicon chip and places 4min, start to adopt positive glue AZp4620 to SiO when the temperature of silicon chip and room temperature are more or less the same
2layer surface is carried out static state and is dripped glue, obtains the silicon chip with photoresist coating;
Step 4, front baking
The silicon chip with photoresist coating in step 3 is placed in the baking oven 4min that temperature is 90 DEG C.Promote that photoresist coating internal solvent fully volatilizees, make photoresist coating dry, increase its adhesiveness and wearing quality;
Step 5, aims at, exposes and development
Accurately locate on the silicon substrate surface of the mask with required figure in step 4, after exposure 70s, by required Graphic transitions on photoresist coating, then develop 1min, positive glue photosensitive area is dissolved in developer solution, is removed by photosensitive positive glue, photoresist coating demonstrates required figure;
Step 6, rear baking
The silicon chip obtained in step 5 is placed in the baking oven 4min that temperature is 110 DEG C, removes the developer solvent in photoresist coating, strengthen photoresist coating and described SiO simultaneously
2the adhesion of interlayer;
Step 7, corrosion
The described SiO that silicon substrate surface in the HF damping fluid removal step six utilizing the volume ratio of HF and water to be 1:6 exposes
2layer, completes the pre-service to silicon chip, more pretreated silicon chip to be positioned over volume ratio be KOH:H
2corrode in the corrosive liquid of O:IPA=3:6:1, corrosion temperature is 75 DEG C, and carries out appropriate stirring in corrosion process, on the silicon chip that required figure is transferred to from described photoresist coating in step 2;
Step 8, removes photoresist coating
Silicon chip in step 7 is placed in acetone and anhydrous alcohol volume ratio is in the mixed solution of 2:1, ultrasonic cleaning 3min, deionized water rinsing is placed on that concentration is 98% sulfuric acid, hydrogen peroxide, deionized water volume ratio are in the solution of 2:1:1, ultrasonic cleaning 3min, remove photoresist coating, use washed with de-ionized water again after taking-up, remove sulfuric acid, hydrogen peroxide, acetone residue;
Step 9, plating aluminium film
Silicon chip in step 8 is installed in vacuum evaporation plating machine, with vacuum pump evacuation, makes the vacuum tightness in evaporator reach 1.3 × 10
-2pa, heating crucible makes highly purified metal aluminum filament dissolve at the temperature of 1200 DEG C and flash to gaseous aluminum, gaseous metal aluminium particulate in silicon chip surface deposition, namely to form one deck through cooling reduction continuously and light, thickness are the aluminium lamination of 200nm.
Embodiment two
A preparation method for Terahertz resonant cavity type plasma chip, comprises the following steps:
Step one, cleaning silicon chip
Ultrasound wave is adopted to select following solvent to clean successively: deionized water 10min, methyl alcohol 15min, acetone 30min, methyl alcohol 10min, deionized water 5min, twice;
Step 2, plating SiO
2layer
Silicon chip after the cleaning obtained in step one is positioned on coating machine falsework, carries out vacuumizing process, be evacuated to vacuum tightness and be less than 7 × 10
-4pa, then starts to plate SiO
2film, the plated film time is 3 hours, obtains being coated with SiO
2the silicon chip of layer;
Step 3, linging
What step 2 obtained is coated with SiO
2the silicon chip of layer is placed in the baking oven 30min that temperature is 2100 DEG C, then takes out silicon chip and places 5min, start to adopt positive glue AZp4620 to SiO when the temperature of silicon chip and room temperature are more or less the same
2layer surface is carried out static state and is dripped glue, obtains the silicon chip with photoresist coating;
Step 4, front baking
The silicon chip with photoresist coating in step 3 is placed in the baking oven 3min that temperature is 100 DEG C;
Step 5, aims at, exposes and development
Accurately locate on the silicon substrate surface of the mask with required figure in step 4, after exposure 71s, by required Graphic transitions on photoresist coating, then develop 2min, positive glue photosensitive area is dissolved in developer solution, is removed by photosensitive positive glue, photoresist coating demonstrates required figure;
Step 6, rear baking
The silicon chip obtained in step 5 is placed in the baking oven 3min that temperature is 120 DEG C, removes the developer solvent in photoresist coating, strengthen photoresist coating and described SiO simultaneously
2the adhesion of interlayer;
Step 7, corrosion
The described SiO that silicon substrate surface in the HF damping fluid removal step six utilizing the volume ratio of HF and water to be 1:6 exposes
2layer, completes the pre-service to silicon chip, more pretreated silicon chip to be positioned over volume ratio be KOH:H
2corrode in the corrosive liquid of O:IPA=3:6:1, corrosion temperature is 80 DEG C, is transferred to by required figure on the silicon chip in step 2 from described photoresist coating;
Step 8, removes photoresist coating
Silicon chip in step 7 is placed in acetone and anhydrous alcohol volume ratio is in the mixed solution of 2:1, ultrasonic cleaning 3min, deionized water rinsing is placed on that concentration is 98% sulfuric acid, hydrogen peroxide, deionized water volume ratio are in the solution of 2:1:1, ultrasonic cleaning 3min, use washed with de-ionized water again after taking-up, remove photoresist coating;
Step 9, plating aluminium film
Silicon chip in step 8 is installed in vacuum evaporation plating machine, with vacuum pump evacuation, makes the vacuum tightness in evaporator reach 6.5 × 10
-3pa, heating crucible makes highly purified metal aluminum filament dissolve at the temperature of 1300 DEG C and flash to gaseous aluminum, gaseous metal aluminium particulate in silicon chip surface deposition, namely to form one deck through cooling reduction continuously and light, thickness are the aluminium lamination of 350nm.
Embodiment three
A preparation method for Terahertz resonant cavity type plasma chip, comprises the following steps:
Step one, cleaning silicon chip
Ultrasound wave is adopted to select following solvent to clean successively: deionized water 15min, methyl alcohol 20min, acetone 40min, methyl alcohol 15min, deionized water 5min, twice;
Step 2, plating SiO
2layer
Silicon chip after the cleaning obtained in step one is positioned on coating machine falsework, carries out vacuumizing process, be evacuated to vacuum tightness and be less than 7 × 10
-4pa, then starts to plate SiO
2film, the plated film time is 5 hours, obtains being coated with SiO
2the silicon chip of layer;
Step 3, linging
What step 2 obtained is coated with SiO
2the silicon chip of layer is placed in the baking oven 25min that temperature is 2200 DEG C, then takes out silicon chip and places 6min, start to adopt positive glue AZp4620 to SiO when the temperature of silicon chip and room temperature are more or less the same
2layer surface is carried out static state and is dripped glue, obtains the silicon chip with photoresist coating;
Step 4, front baking
The silicon chip with photoresist coating in step 3 is placed in the baking oven 2min that temperature is 110 DEG C;
Step 5, aims at, exposes and development
Accurately locate on the silicon substrate surface of the mask with required figure in step 4, after exposure 72s, by required Graphic transitions on photoresist coating, then develop 3min, positive glue photosensitive area is dissolved in developer solution, is removed by photosensitive positive glue, photoresist coating demonstrates required figure;
Step 6, rear baking
The silicon chip obtained in step 5 is placed in the baking oven 2min that temperature is 130 DEG C, removes the developer solvent in photoresist coating, strengthen photoresist coating and described SiO simultaneously
2the adhesion of interlayer;
Step 7, corrosion
The described SiO that silicon substrate surface in the HF damping fluid removal step six utilizing the volume ratio of HF and water to be 1:6 exposes
2layer, completes the pre-service to silicon chip, more pretreated silicon chip to be positioned over volume ratio be KOH:H
2corrode in the corrosive liquid of O:IPA=3:6:1, corrosion temperature is 85 DEG C, is transferred to by required figure on the silicon chip in step 2 from described photoresist coating;
Step 8, removes photoresist coating
Silicon chip in step 7 is placed in acetone and anhydrous alcohol volume ratio is in the mixed solution of 2:1, ultrasonic cleaning 3min, deionized water rinsing is placed on that concentration is 98% sulfuric acid, hydrogen peroxide, deionized water volume ratio are in the solution of 2:1:1, ultrasonic cleaning 3min, use washed with de-ionized water again after taking-up, remove photoresist coating;
Step 9, plating aluminium film
Silicon chip in step 8 is installed in vacuum evaporation plating machine, with vacuum pump evacuation, makes the vacuum tightness in evaporator reach 1.3 × 10
-3pa, heating crucible makes highly purified metal aluminum filament dissolve at the temperature of 1400 DEG C and flash to gaseous aluminum, gaseous metal aluminium particulate in silicon chip surface deposition, namely to form one deck through cooling reduction continuously and light, thickness are the aluminium lamination of 500nm.
Embodiment four
Fig. 2 is the sectional view of the Terahertz resonant cavity type plasma chip of the present embodiment.
Fig. 3 (a) is the vertical view of the Terahertz resonant cavity type plasma chip of the present embodiment.
Fig. 3 (b) is the vertical view of the groove of the present embodiment.
As shown in Figures 2 and 3, the structure of the Terahertz resonant cavity type plasma chip 100 prepared according to the method for embodiment 1 ~ embodiment 3 is followed successively by from top to bottom and is followed successively by from top to bottom: metal level 1, SiO
2layer 2 and Si layer 3.Chip 100 is provided with at least one groove 4, the bottom land of groove is arranged in Si layer 3, and groove surfaces is metal level 1, and the incident light that metal level is injected in groove coupling produces surface plasma excimer, constitutes the plasmon structures layer of chip.
The shape of the xsect of groove is " C " font, and bottom land is " V " font.
Embodiment effect and effect
Present embodiments provide a kind of Terahertz resonant cavity type plasma chip and preparation method thereof, owing to having plated layer of metal film on the silicon materials carrying out structure, make total can be equivalent to metal plasma microstructure Terahertz chip, solve the difficult problem that silicon materials can not excite Terahertz surface wave, method process-cycle structure in silicon materials simultaneously owing to adopting photoetching and wet etching to combine, both the processing technology of process-cycle structure in silicon materials had been simplified, more be conducive to realizing batch production, solve again traditional alternately reciprocating silicon etching process, substantially increase the smooth property of structure.
In addition, C font groove is compared to strip groove of the prior art, and make the loss of THz wave lower, dispersion is less.
Claims (6)
1. a preparation method for Terahertz resonant cavity type plasma chip, is characterized in that, comprise the following steps:
Step one, cleaning silicon chip
Ultrasound wave is adopted to select deionized water 5 ~ 15min, methyl alcohol 10 ~ 20min, acetone 20 ~ 40min, methyl alcohol 5 ~ 15min, deionized water 5 ~ 10min to clean successively;
Step 2, plating SiO
2layer
Described silicon chip after the cleaning obtained in described step one is positioned on coating machine falsework, carries out vacuumizing process, be evacuated to vacuum tightness and be less than 7 × 10
-4pa, then starts to plate SiO
2film, the plated film time is 0.5 to 5 hour, obtains being coated with SiO
2the silicon chip of layer;
Step 3, linging
What described step 2 obtained is coated with SiO
2the silicon chip of layer is placed in baking oven 25 ~ 35min that temperature is 2000 ~ 2200 DEG C, then takes out described silicon chip and places 4 ~ 6min, start to adopt positive glue to described SiO when the temperature of described silicon chip and room temperature are more or less the same
2layer surface is carried out static state and is dripped glue, obtains the silicon chip with photoresist coating;
Step 4, front baking
The silicon chip with photoresist coating in described step 3 is placed in baking oven 2 ~ 4min that temperature is 90 ~ 110 DEG C;
Step 5, aims at, exposes and development
Accurately locate on the described silicon substrate surface of the mask with required figure in described step 4, exposure 70 ~ 72s, by described required Graphic transitions on described photoresist coating, then develop 1 ~ 3min, photosensitive described positive glue is removed, described photoresist coating demonstrates required figure;
Step 6, rear baking
The described silicon chip obtained in described step 5 is placed in baking oven 2 ~ 4min that temperature is 110 ~ 130 DEG C, for strengthening described photoresist coating and described SiO
2the adhesion of interlayer;
Step 7, corrosion
The described SiO that the described silicon substrate surface in described step 6 exposes removed by the HF damping fluid utilizing the volume ratio of HF and water to be 1:6
2layer, completes the pre-service to described silicon chip, more pretreated described silicon chip is positioned over volume ratio is KOH:H
2corrode in the corrosive liquid of O:IPA=3:6:1, corrosion temperature is 75 ~ 85 DEG C, is transferred on the silicon chip in described step 2 by described required figure from described photoresist coating;
Step 8, removes photoresist coating
Described silicon chip in described step 7 is placed in acetone and anhydrous alcohol volume ratio is in the mixed solution of 2:1, ultrasonic cleaning 3min, deionized water rinsing is placed on that concentration is 98% sulfuric acid, hydrogen peroxide, deionized water volume ratio are in the solution of 2:1:1, ultrasonic cleaning 3min, use washed with de-ionized water again after taking-up, remove described photoresist coating;
Step 9, metal-coated membrane
Described silicon chip in described step 8 is installed in vacuum evaporation plating machine, with vacuum pump evacuation, makes the vacuum tightness in described evaporator reach 1.3 × 10
-2~ 1.3 × 10
-3pa, heating crucible makes highly purified tinsel dissolve and flash to gaseous state, and gaseous metal particulate is in silicon chip surface deposition, through cooling reduction i.e. formation one deck metal level of light continuously.
2. the preparation method of Terahertz resonant cavity type plasma chip according to claim 1, is characterized in that:
Wherein, in step 3, adopt positive glue AZp4620 to carry out static state and drip glue.
3. the preparation method of Terahertz resonant cavity type plasma chip according to claim 1, is characterized in that:
Wherein, in step 9, described metal film is aluminium film, and the thickness of described aluminium film is 200 ~ 500nm.
4. the preparation method of Terahertz resonant cavity type plasma chip according to claim 1, is characterized in that:
Wherein, in step 9, described metallic aluminium dissolves and flashes to gaseous aluminum at the temperature of 1200 ~ 1400 DEG C.
5. a Terahertz resonant cavity type plasma chip, is characterized in that, the structural sheet of described chip is followed successively by from top to bottom:
Metal level;
SiO
2layer; And
Si layer,
Wherein, described chip is provided with at least one groove, the bottom land of described groove is arranged in described Si layer, and described groove surfaces is described metal level,
The incident light that described metal level is injected in described groove coupling produces surface plasma excimer, constitutes the plasmon structures layer of described chip.
6. Terahertz resonant cavity type plasma chip according to claim 5, is characterized in that:
Wherein, the shape of the xsect of described groove is " C " font, and described bottom land is " V " font.
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| CN106249321A (en) * | 2016-09-30 | 2016-12-21 | 深圳市太赫兹系统设备有限公司 | A kind of Terahertz Meta Materials waveguide and device |
| CN109289946A (en) * | 2018-09-11 | 2019-02-01 | 上海理工大学 | A kind of micro-fluidic type resonance cavity chip of Terahertz PDMS and preparation method thereof |
| CN109490245A (en) * | 2019-01-04 | 2019-03-19 | 上海理工大学 | Acetone liquid concentration detection method based on terahertz time-domain spectroscopic technology |
| CN111244586A (en) * | 2020-01-15 | 2020-06-05 | 合肥工业大学 | Method for preparing periodic gear-shaped terahertz band-pass filter structure |
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| CN111244586A (en) * | 2020-01-15 | 2020-06-05 | 合肥工业大学 | Method for preparing periodic gear-shaped terahertz band-pass filter structure |
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| CN104931137B (en) | 2017-04-05 |
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