CN103377869A - Impedance matching method, impedance matching system, and plasma processing device - Google Patents
Impedance matching method, impedance matching system, and plasma processing device Download PDFInfo
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- CN103377869A CN103377869A CN2012101107401A CN201210110740A CN103377869A CN 103377869 A CN103377869 A CN 103377869A CN 2012101107401 A CN2012101107401 A CN 2012101107401A CN 201210110740 A CN201210110740 A CN 201210110740A CN 103377869 A CN103377869 A CN 103377869A
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Abstract
The invention discloses an impedance matching method, an impedance matching system, and a plasma processing device. According to the impedance matching method, impedance matching between a radio frequency power supply and a load is achieved through an impedance matching network. The impedance matching network includes: a transformer, an inductor, and a capacitor. The primary of the transformer is connected with the radio frequency power supply. The inductor, the capacitor and the load are connected serially with the secondary of the transformer in sequence. The impedance matching method includes: obtaining a turns ratio adjustment amount according to an impedance real part deviation, and adjusting the turns ratio of the transformer according to the turns ration adjustment amount; and obtaining a capacitor adjustment amount according to an impedance imaginary part deviation, and adjusting the capacitor according to the capacitor adjustment amount. With the impedance matching method, difficulty for impedance matching is reduced so that impedance matching can be achieved easily.
Description
Technical field
The present invention relates to microelectronics technology, particularly a kind of impedance matching methods, impedance matching system and plasma processing device.
Background technology
Plasma apparatus is widely used in the manufacture crafts such as semiconductor, solar cell and flat panel display, such as: using plasma equipment carries out thin film deposition or plasma etching etc.The mode of plasma generation is a lot of at present, and the power that applies when producing plasma is exported by power supply, power supply divides from frequency range can comprise DC power supply usually, radio-frequency power supply and microwave power supply, wherein, radio-frequency power supply specifically can comprise: low frequency (30kHz-300kHz) power supply, intermediate frequency (300kHz-2MHz) power supply, high frequency (2MHz-30MHz) power supply and hyperfrequency (30MHz-300MHz) power supply.Itself has characteristic impedance radio-frequency power supply, and for example: this characteristic impedance is generally 50 Ω, and the load impedance of plasma load generally is not 50 Ω.According to transmission line theory, when the load impedance of the output impedance of radio-frequency power supply and plasma load conjugation not, that is: during impedance mismatch, the power output of radio-frequency power supply can't be loaded on the plasma load fully, can produce power reflection, can cause power dissipation like this, the power that is reflected back simultaneously radio-frequency power supply can cause damage to radio-frequency power supply itself.For the characteristic impedance of solution radio-frequency power supply and the unmatched problem of load impedance of plasma load, usually an impedance matching network adjusting device need to be set between radio-frequency power supply and plasma load.
Fig. 1 is a kind of structural representation of typical impedance matching system.As shown in Figure 1, this impedance matching system comprises: load, impedance matching network and in, low-frequency power.Wherein, impedance matching network comprises transformer, capacitor C and inductance L, the input of transformer with in, low-frequency power links to each other, the output of transformer and capacitor C and load connect and compose path successively, inductance L is connected in parallel on the output of transformer.Impedance matching network so that the input impedance of impedance matching network with in, the output impedance conjugate impedance match of low-frequency power.As shown in Figure 1, the impedance of the input impedance of impedance matching network for looking back from the impedance matching network input.
In actual use, impedance matching realizes by adjusting transformer turn ratio and inductance L (or capacitor C).The input impedance of impedance matching network comprises input impedance real part and input impedance imaginary part, the adjustment of inductance L in the impedance matching process (or capacitor C) and the adjustment of transformer turn ratio are to all influential from input impedance real part and input impedance imaginary part, therefore realize that by adjusting transformer turn ratio and inductance L (or capacitor C) the impedance matching difficulty is large, efficient is low, and the reliability of impedance matching is low.
Summary of the invention
The invention provides a kind of impedance matching methods, impedance matching system and plasma processing device, with the difficulty that reduces impedance matching and precision and the efficient that improves coupling, thereby can realize rapidly, reliably impedance matching.
For achieving the above object, the invention provides a kind of impedance matching system, make impedance matching between radio-frequency power supply and the load by impedance matching network, described impedance matching network comprises: transformer, inductance and electric capacity, and the elementary and described radio-frequency power supply of described transformer is connected; Described inductance, described electric capacity and described load are connected on the secondary of described transformer successively, and described method comprises:
Obtain the output impedance of described radio-frequency power supply and the input impedance of described impedance matching network;
According to the output impedance of described radio-frequency power supply and the input impedance of described impedance matching network, obtain impedance real part deviation and imaginary impedance deviation;
If judge described impedance real part deviation greater than the first default precision, obtain the turn ratio adjustment amount according to described impedance real part deviation, and according to described turn ratio adjustment amount the turn ratio of described transformer is adjusted;
If judging described impedance real part deviation is less than or equal to the first default precision and judges described imaginary impedance deviation greater than the second default precision, obtain the electric capacity adjustment amount according to described imaginary impedance deviation, and according to described electric capacity adjustment amount described electric capacity is adjusted.
Wherein, the output impedance of described radio-frequency power supply comprises output impedance real part and output impedance imaginary part; The input impedance of described impedance matching network comprises input impedance real part and input impedance imaginary part; The difference of described output impedance real part and described input impedance real part is described impedance real part deviation, and the difference of described output impedance imaginary part and described input impedance imaginary part is described imaginary impedance deviation.
Wherein, described input impedance real part is Z
a=n
2R
L, described input impedance imaginary part is
Wherein, n is the turn ratio of primary coil and the secondary coil of described transformer, R
LBe load equivalent resistance, C
LBe load equivalent electric capacity, L is inductance, and C is electric capacity, and ω is impedance factor, and j is the imaginary part of symbol.
Wherein, the described turn ratio of described transformer the adjustment according to described turn ratio adjustment amount also comprises afterwards:
Continue to carry out the described step of obtaining the input impedance of described impedance matching network.
Wherein, described described capacitance the adjustment according to described electric capacity adjustment amount also comprises afterwards:
Continue to carry out the described step of obtaining the input impedance of described impedance matching network.
Wherein, be less than or equal to the second default precision if judge described imaginary impedance deviation, then continue to carry out the described step of obtaining the input impedance of described impedance matching network.
Wherein, described input impedance of obtaining described impedance matching network also comprises afterwards:
Whether the output impedance of judging the input impedance of described impedance matching network and described radio-frequency power supply conjugate impedance match;
If the output impedance of judging the input impedance of described impedance matching network and described radio-frequency power supply is conjugate impedance match not, carry out describedly according to the output impedance of described radio-frequency power supply and the input impedance of described impedance matching network, obtain the step of impedance real part deviation and imaginary impedance deviation;
If judge the input impedance of described impedance matching network and the output impedance conjugate impedance match of described radio-frequency power supply, continue to carry out the described step of obtaining the input impedance of described impedance matching network.
The present invention also provides a kind of impedance matching system, be used for making the impedance matching between radio-frequency power supply and the load, it comprises: be arranged on the impedance matching network between described radio-frequency power supply and the described load, so that the output impedance of the input impedance of described impedance matching network and described radio-frequency power supply coupling, described impedance matching network comprises: transformer, inductance and electric capacity, described transformer elementary be connected radio-frequency power supply and connect, described inductance, described electric capacity and described load are connected on the secondary of described transformer successively, thereby make the size of described electric capacity not affect the real part of described input impedance.
Wherein, also comprise control unit, described control unit comprises:
Computing module is used for according to the output impedance of described radio-frequency power supply and the input impedance of described impedance matching network, obtains impedance real part deviation and imaginary impedance deviation;
The first judge module is used for judging that described impedance real part deviation whether greater than the first default precision, if judge described impedance real part deviation greater than the first default precision, then obtains the turn ratio adjustment amount according to described impedance real part deviation;
The first Executive Module is used for according to the described turn ratio adjustment amount that described the first judge module obtains the turn ratio of described transformer being adjusted;
The second judge module is used for judging described imaginary impedance deviation greater than the second default precision, and, if judge described imaginary impedance deviation greater than the second default precision, obtain the electric capacity adjustment amount according to described imaginary impedance deviation;
The second Executive Module is used for according to the electric capacity adjustment amount that described the second judge module obtains described electric capacity being adjusted.
Wherein, also comprise:
The input impedance detecting unit is used for obtaining the output impedance of described radio-frequency power supply and the input impedance of described impedance matching network;
The output impedance of described radio-frequency power supply comprises output impedance real part and output impedance imaginary part; The input impedance of described impedance matching network comprises input impedance real part and input impedance imaginary part;
Described computing module obtains described impedance real part deviation according to the difference of described output impedance real part and described input impedance real part, and obtains described imaginary impedance deviation according to the difference of described output impedance imaginary part and described input impedance imaginary part.
Wherein, described input impedance real part is Z
a=n
2R
L, described input impedance imaginary part is
Wherein, n is the turn ratio of primary coil and the secondary coil of described transformer, R
LBe load equivalent resistance, C
LBe load equivalent electric capacity, L is inductance, and C is electric capacity, and ω is impedance factor, and j is the imaginary part of symbol.
Wherein, also comprise: the output impedance detecting unit is used for the output impedance of obtaining described radio-frequency power supply.
Wherein, also comprise: the 3rd judging unit, whether the output impedance that is used for judging the input impedance of described impedance matching network and described radio-frequency power supply conjugate impedance match.
The present invention also provides a kind of plasma processing device, comprise radio-frequency power supply, reaction chamber and impedance matching system, described impedance matching system is arranged between described radio-frequency power supply and the described reaction chamber, so that the impedance matching between described radio-frequency power supply and the described reaction chamber, described impedance matching system adopts described impedance matching system provided by the invention.
The present invention has following beneficial effect:
Impedance matching methods provided by the invention is connected on the secondary of transformer successively based on inductance, electric capacity and load, thereby the size that makes electric capacity does not affect the real part of input impedance, when judging the impedance real part deviation greater than the first default precision, regulate the turn ratio of transformer so that the real part coupling of the input impedance of the real part of the output impedance of radio-frequency power supply and impedance matching network; When judging the imaginary impedance deviation greater than the second default precision, the size of control capacittance is so that the imaginary part coupling of the input impedance of the imaginary part of the output impedance of radio-frequency power supply and impedance matching network; That is, respectively real part and the imaginary part of impedance are adjusted, thereby made the output impedance of radio-frequency power supply and the input impedance coupling of impedance matching network.This impedance matching methods not only can reduce the difficulty of impedance matching, and has improved precision and the efficient of coupling, thereby makes more rapidly, reliably the output impedance of radio-frequency power supply and the input impedance of described impedance matching network realize coupling.
In the impedance matching system provided by the invention, inductance, electric capacity and load are connected on the secondary of transformer successively, so that the size of described electric capacity does not affect the real part of described input impedance, thereby can simplify the matching process of the output impedance of the input impedance of impedance matching network and radio-frequency power supply, and then improve precision and the efficient of impedance matching.
A preferred embodiment as impedance matching system of the present invention, control unit is judged the impedance real part deviation whether during greater than the first default precision at the first judge module, the first Executive Module is adjusted the turn ratio of transformer, so that the real part of the input impedance of the real part of the output impedance of radio-frequency power supply and impedance matching network coupling; When the second judge module is judged the imaginary impedance deviation greater than the second default precision, by the size of the second Executive Module adjustment electric capacity, so that the imaginary part of the input impedance of the imaginary part of the output impedance of radio-frequency power supply and impedance matching network coupling; Thereby make the output impedance of radio-frequency power supply and the input impedance coupling of impedance matching network.This impedance matching system not only can reduce the difficulty of impedance matching, and has improved precision and the efficient of coupling, thereby makes more rapidly, reliably the output impedance of radio-frequency power supply and the input impedance of described impedance matching network realize coupling.
In addition, plasma processing device provided by the invention makes the real part of real part and the input impedance of impedance matching network of the output impedance of radio-frequency power supply mate by the turn ratio of regulating transformer; And, by the size of control capacittance, so that the imaginary part of the input impedance of the imaginary part of the output impedance of radio-frequency power supply and impedance matching network coupling; Thereby make the output impedance of radio-frequency power supply and the input impedance coupling of impedance matching network; Therefore, this plasma process equipment can make the output impedance of radio-frequency power supply and the input impedance of described impedance matching network realize coupling more rapidly, reliably.
Description of drawings
Fig. 1 is a kind of structural representation of typical impedance matching system;
The structural representation of a kind of impedance matching system that Fig. 2 provides for the embodiment of the invention one;
Fig. 3 is the equivalent circuit diagram of Fig. 1 middle impedance matching system;
The structural representation of a kind of impedance matching network that Fig. 4 provides for the embodiment of the invention two;
Fig. 5 is the structured flowchart of control unit in the inventive embodiments two;
The flow chart of a kind of impedance matching methods that Fig. 6 provides for the embodiment of the invention three;
The flow chart of a kind of impedance matching methods that Fig. 7 provides for the embodiment of the invention four;
The structural representation of the plasma processing device that Fig. 8 provides for the embodiment of the invention five.
Embodiment
For making those skilled in the art understand better technical scheme of the present invention, below in conjunction with accompanying drawing impedance matching system provided by the invention, impedance matching methods and plasma processing device are described in detail.
The structural representation of a kind of impedance matching system that Fig. 2 provides for the embodiment of the invention one, Fig. 3 is the equivalent circuit diagram of Fig. 3 middle impedance matching system.See also Fig. 2 and Fig. 3, this impedance matching system comprises: impedance matching network 2, it is arranged between radio-frequency power supply 1 and the load 3, is used for making the input impedance of impedance matching network 2 and the output impedance conjugate impedance match of radio-frequency power supply 1.
Impedance matching network 2 comprises: transformer 21, inductance L and capacitor C, and wherein, the elementary and radio-frequency power supply 1 of transformer 21 is connected, and inductance L, capacitor C and load 3 are connected on the secondary of transformer 21 successively.
In the present embodiment, radio-frequency power supply 1 can be intermediate frequency power supply or low-frequency power, and capacitor C adopts tunable capacitor.
See also Fig. 3, Rg is the characteristic impedance of radio-frequency power supply 1.The input impedance Z of impedance matching network 2 is Z=n
2Z
1, wherein, n is the turn ratio of transformer 2 primary coils and secondary coil; Z
1Be the load impedance of looking backward from secondary (output) of transformer; And,
Wherein, R
LBe load equivalent resistance; C
LBe load equivalent electric capacity; ω is impedance factor; L is inductance; C is electric capacity; J is the imaginary part of symbol.
Therefore draw,
As from the foregoing, the real part of the input impedance of impedance matching network 2 is Z
a=n
2R
LThe imaginary part of the input impedance of impedance matching network 2 is
Therefore, can learn, when inductance L, capacitor C and load 3 are connected on transformer 21 secondary successively, the real part Z of the input impedance of impedance matching network
aOnly relevant with the turn ratio n of transformer 21; The imaginary part Z of the input impedance of impedance matching network
bNot only relevant with the turn ratio n of transformer 21, and relevant with the size of capacitor C.In other words, when regulating the turn ratio n of transformer 21, the real part Z of the input impedance of impedance matching network
aWith imaginary part Z
bChange simultaneously; When control capacittance C big or small, the real part Z of the input impedance of impedance matching network only
aChange, and the imaginary part Z of the input impedance of impedance matching network
bDo not change.
The conjugate impedance match process of the input impedance of the input impedance of present embodiment impedance matching network 2 and radio-frequency power supply 1 has been utilized above-mentioned characteristic just, changes the control inputs imaginary impedance by adjusting capacitor C, by adjusting turn ratio n control inputs impedance real part.Particularly, can be first by adjusting turn ratio n with input impedance real part Z when impedance matching
aAdjust, and then by adjusting capacitor C the input impedance imaginary part is adjusted.Since the adjustment of capacitor C on the input impedance real part without impact, therefore when by adjust capacitor C the adjustment of input impedance imaginary part is complete after, the input impedance conjugate impedance match of the input impedance of impedance matching network 2 and radio-frequency power supply 1.
In the present embodiment, can adjust turn ratio and/or the electric capacity of transformer by artificial adjustment mode or the mode of automatically adjusting.
The structural representation of a kind of impedance matching network that Fig. 4 provides for the embodiment of the invention two.As shown in Figure 4, the impedance matching network in the present embodiment also comprises on the basis of above-described embodiment one: input impedance detecting unit 22 and control unit 23, wherein,
Input impedance detecting unit 22 is arranged between radio-frequency power supply 1 and transformer 21 elementary, and it is for detection of the input impedance that goes out impedance matching network 2, and exports input impedance to control unit 23.
The input of control unit 23 is connected with input impedance detecting unit 22, control unit 23 output be connected with capacitor C with transformer 21.Control unit 23 is used for adjusting the turn ratio of transformer 21 and/or electric capacity so that the input impedance of the impedance matching network 2 after adjusting and the output impedance conjugate impedance match of radio-frequency power supply 1 according to input impedance.
Fig. 5 is the structured flowchart of control unit in the inventive embodiments two.See also Fig. 4 and Fig. 5, control unit 23 comprises:
The output impedance of radio-frequency power supply can by manually input, also can obtain in the process of implementing impedance matching in real time.The input impedance of impedance matching network can obtain by input impedance detecting unit 22 examinations.
The first judge module 232 is used for judging that described impedance real part deviation whether greater than the first default precision, if judge described impedance real part deviation greater than the first default precision, then obtains the turn ratio adjustment amount according to described impedance real part deviation.
The first Executive Module 233, the first Executive Modules 233 are connected with the adjustable side of transformer 21, and it is used for according to the described turn ratio adjustment amount that described the first judge module obtains the turn ratio of described transformer being adjusted.The first Executive Module 233 can be adjusted by relay switch gear mode the turn ratio of transformer 21.
The second judge module 234 is used for judging described imaginary impedance deviation greater than the second default precision, and, if judge described imaginary impedance deviation greater than the second default precision, obtain the electric capacity adjustment amount according to described imaginary impedance deviation.
The second Executive Module 235, the second Executive Modules 235 are connected with the adjustable side of capacitor C, and it is used for according to the electric capacity adjustment amount that described the second judge module obtains described electric capacity being adjusted.The second Executive Module 235 can be adjusted by stepping motor the size of capacitor C.
Preferably, present embodiment also comprises output impedance detecting unit (not shown), its can automatic acquisition radio-frequency power supply 1 output impedance, it can reduce operating personnel's labour intensity, more is conducive to make the input impedance of impedance matching network 2 and the output impedance of radio-frequency power supply 1 to realize conjugate impedance match.
Present embodiment is connected on the secondary of described transformer successively with inductance L, capacitor C and load, purpose is the real part that does not affect input impedance in the size of control capacittance C, thereby can regulate first the real part of input impedance, in the imaginary part of regulating input impedance, and then reduced the difficulty of matching of the output impedance of the input impedance of impedance matching network and radio-frequency power supply, simplified the matching process of the output impedance of the input impedance of impedance matching network and radio-frequency power supply, the efficient that this not only can improve impedance matching can also improve the precision of impedance matching.In addition, can realize automatic adjustment to input impedance real part and input impedance imaginary part by control unit, thereby realize the Auto-matching process.
The embodiment of the invention three provides a kind of impedance matching methods, and it makes impedance matching between radio-frequency power supply and the load by impedance matching system, and impedance matching system such as embodiment one and embodiment two described impedance matching systems repeat no more here.
The flow chart of a kind of impedance matching methods that Fig. 6 provides for the embodiment of the invention three, as shown in Figure 6, this impedance matching methods comprises:
Step 102 obtains impedance real part deviation and imaginary impedance deviation according to the output impedance of radio-frequency power supply and the input impedance of impedance matching network.
If step 103 is judged the impedance real part deviation greater than the first default precision, obtain the turn ratio adjustment amount according to the impedance real part deviation, and according to the turn ratio adjustment amount turn ratio of transformer is adjusted.
If step 104 is judged the impedance real part deviation and is less than or equal to the first default precision and judges the imaginary impedance deviation greater than the second default precision, obtain the electric capacity adjustment amount according to the imaginary impedance deviation, and according to the electric capacity adjustment amount electric capacity is adjusted.
The impedance matching methods that present embodiment provides is connected on the secondary of transformer successively based on inductance, electric capacity and load, thereby the size that makes electric capacity does not affect the real part of input impedance, when judging the impedance real part deviation greater than the first default precision, regulate the turn ratio of transformer so that the real part coupling of the input impedance of the real part of the output impedance of radio-frequency power supply and impedance matching network; When judging the imaginary impedance deviation greater than the second default precision, the size of control capacittance is so that the imaginary part coupling of the input impedance of the imaginary part of the output impedance of radio-frequency power supply and impedance matching network; That is, respectively real part and the imaginary part of impedance are adjusted, thereby made the output impedance of radio-frequency power supply and the input impedance coupling of impedance matching network.This impedance matching methods not only can reduce the difficulty of impedance matching, and has improved precision and the efficient of coupling, thereby makes more rapidly, reliably the output impedance of radio-frequency power supply and the input impedance of described impedance matching network realize coupling.
The embodiment of the invention four provides a kind of impedance matching methods, this impedance matching methods is based on impedance matching system, so that the impedance matching between radio-frequency power supply and the load, impedance matching system such as embodiment one and embodiment two described impedance matching systems repeat no more here.The flow chart of a kind of impedance matching methods that Fig. 7 provides for the embodiment of the invention four, as shown in Figure 7, this impedance matching methods comprises:
Step 201, the input impedance of obtaining impedance matching network.
Whether the output impedance of step 202, the input impedance of judging impedance matching network and radio-frequency power supply conjugate impedance match, if the output impedance of judging the input impedance of impedance matching network and radio-frequency power supply conjugate impedance match not, execution in step 203; If judge the input impedance of impedance matching network and the output impedance conjugate impedance match of radio-frequency power supply, then execution in step 201.
In the present embodiment, the input impedance of impedance matching network 2 is Z, the output impedance of radio-frequency power supply is A, then step 202 is specifically as follows: whether the difference of judging the input impedance Z of the output impedance A of radio-frequency power supply and impedance matching network is 0, if judging the output impedance A of radio-frequency power supply and the input impedance Z of impedance matching network is not 0, the output impedance that then shows the input impedance of impedance matching network and radio-frequency power supply is conjugate impedance match not; If judging the output impedance A of radio-frequency power supply and the input impedance Z of impedance matching network is 0, then show the input impedance of impedance matching network and the output impedance conjugate impedance match of radio-frequency power supply.
The output impedance of radio-frequency power supply only comprises output impedance real part A, and its output impedance imaginary part is 0; And the input impedance Z of impedance matching network comprises input impedance real part Z
aWith input impedance imaginary part Z
bThen this step specifically comprises: output impedance real part A is deducted input impedance real part Z
a, draw impedance real part deviation Z
Ae, that is: Z
Ae=A-Z
aAnd deduct input impedance imaginary part Z with 0
b, draw imaginary impedance deviation Z
Be, that is: Z
Be=-Z
bFor example: output impedance real part A=50W.
In the present embodiment, the first default precision can preset as required.In this step, if judge the impedance real part deviation greater than the first default precision, show that the input impedance real part need to adjust, then execution in step 205; Be less than or equal to the first default precision if judge the impedance real part deviation, show that the input impedance real part need not to adjust, then execution in step 207.
This step specifically can comprise: with impedance real part deviation Z
AeWith the first adjustment COEFFICIENT K
1Multiply each other, draw turn ratio adjustment amount Dn, that is: Dn=K
1Z
Ae
In the present embodiment, according to turn ratio adjustment amount Dn the turn ratio n of transformer is adjusted, thereby realization is to the adjustment of input impedance real part.
In the present embodiment, the second default precision can preset as required.In this step, if judge the imaginary impedance deviation greater than the second default precision, show that the input impedance imaginary part need to adjust, then execution in step 208; Be less than or equal to the second default precision if judge the imaginary impedance deviation, show that the input impedance imaginary part need not to adjust, then execution in step 201.
This step specifically can comprise: with imaginary impedance deviation Z
BeWith the first adjustment COEFFICIENT K
2Multiply each other, draw turn ratio adjustment amount D
C, that is: D
C=K
2Z
Be
In the present embodiment, according to electric capacity adjustment amount D
CCapacitor C is adjusted, thereby realization is to the adjustment of input impedance imaginary part.
Need to prove: when execution in step 206, adjustment to turn ratio n also can cause the input impedance imaginary part to change, but the variation of input impedance this moment imaginary part not necessarily can realize impedance matching, if unrealized impedance matching also needs to reach the purpose that the input impedance imaginary part is adjusted by the adjustment to electric capacity, thereby realize impedance matching.
The impedance matching methods that present embodiment provides can be realized by the impedance matching system that above-described embodiment one or embodiment two provide.Wherein, if impedance matching methods is realized by the impedance matching system that embodiment two provides, then step 201 can be carried out by input impedance detecting unit 22, and step 202 to step 209 can be carried out by the computing module 231 in the control unit 23, the first judge module 232, the first Executive Module 233, the second judge module 234 and the second Executive Module 235.
Further, in the present embodiment, can also comprise before the step 201: step 200, judge whether to withdraw from the flow process of impedance matching methods, if not, then execution in step 201; If then flow process finishes.Then in the present embodiment, step 202, step 206, step 207 and step 209 afterwards can first execution in step 200.
The impedance matching methods that present embodiment provides is connected on the secondary of transformer successively based on inductance, electric capacity and load, thereby the size that makes electric capacity does not affect the real part of input impedance, when judging the impedance real part deviation greater than the first default precision, regulate the turn ratio of transformer so that the real part coupling of the input impedance of the real part of the output impedance of radio-frequency power supply and impedance matching network; When judging the imaginary impedance deviation greater than the second default precision, the size of control capacittance is so that the imaginary part coupling of the input impedance of the imaginary part of the output impedance of radio-frequency power supply and impedance matching network; That is, respectively real part and the imaginary part of impedance are adjusted, thereby made the output impedance of radio-frequency power supply and the input impedance coupling of impedance matching network.This impedance matching methods is not only reducing the difficulty of impedance matching, and improved precision and the efficient of coupling, thereby makes more rapidly, reliably the output impedance of radio-frequency power supply and the input impedance of described impedance matching network realize coupling.
The structural representation of a kind of plasma processing device that Fig. 8 provides for the embodiment of the invention five.As shown in Figure 8, plasma processing device comprises radio-frequency power supply 1, reaction chamber 5 and impedance matching system 2, impedance matching system 2 is arranged between radio-frequency power supply 1 and the reaction chamber 5, so that the impedance matching between radio-frequency power supply 1 and the reaction chamber 5, wherein, reaction chamber is as the load among above-described embodiment one and the embodiment two, and impedance matching system adopts embodiment one and embodiment two middle impedance matching systems.
The plasma processing device that present embodiment provides makes the real part of real part and the input impedance of impedance matching network of the output impedance of radio-frequency power supply mate by the turn ratio of regulating transformer; And, by the size of control capacittance, so that the imaginary part of the input impedance of the imaginary part of the output impedance of radio-frequency power supply and impedance matching network coupling; Thereby make the output impedance of radio-frequency power supply and the input impedance coupling of impedance matching network; Therefore, this plasma process equipment can make the output impedance of radio-frequency power supply and the input impedance of described impedance matching network realize coupling more rapidly, reliably.
Be understandable that above execution mode only is the illustrative embodiments that adopts for principle of the present invention is described, yet the present invention is not limited thereto.For those skilled in the art, without departing from the spirit and substance in the present invention, can make various modification and improvement, these modification and improvement also are considered as protection scope of the present invention.
Claims (14)
1. impedance matching methods makes impedance matching between radio-frequency power supply and the load by impedance matching network, and described impedance matching network comprises: transformer, inductance and electric capacity, and the elementary and described radio-frequency power supply of described transformer is connected; It is characterized in that described inductance, described electric capacity and described load are connected on the secondary of described transformer successively, described method comprises:
Obtain the output impedance of described radio-frequency power supply and the input impedance of described impedance matching network;
According to the output impedance of described radio-frequency power supply and the input impedance of described impedance matching network, obtain impedance real part deviation and imaginary impedance deviation;
If judge described impedance real part deviation greater than the first default precision, obtain the turn ratio adjustment amount according to described impedance real part deviation, and according to described turn ratio adjustment amount the turn ratio of described transformer is adjusted;
If judging described impedance real part deviation is less than or equal to the first default precision and judges described imaginary impedance deviation greater than the second default precision, obtain the electric capacity adjustment amount according to described imaginary impedance deviation, and according to described electric capacity adjustment amount described electric capacity is adjusted.
2. impedance matching methods according to claim 1 is characterized in that, the output impedance of described radio-frequency power supply comprises output impedance real part and output impedance imaginary part; The input impedance of described impedance matching network comprises input impedance real part and input impedance imaginary part; The difference of described output impedance real part and described input impedance real part is described impedance real part deviation, and the difference of described output impedance imaginary part and described input impedance imaginary part is described imaginary impedance deviation.
3. impedance matching methods according to claim 2 is characterized in that, described input impedance real part is Z
a=n
2R
L, described input impedance imaginary part is
Wherein, n is the turn ratio of primary coil and the secondary coil of described transformer, R
LBe load equivalent resistance, C
LBe load equivalent electric capacity, L is inductance, and C is electric capacity, and ω is impedance factor, and j is the imaginary part of symbol.
4. impedance matching methods according to claim 1 is characterized in that, the described turn ratio of described transformer the adjustment according to described turn ratio adjustment amount also comprises afterwards:
Continue to carry out the described step of obtaining the input impedance of described impedance matching network.
5. impedance matching methods according to claim 1 is characterized in that, described described capacitance the adjustment according to described electric capacity adjustment amount also comprises afterwards:
Continue to carry out the described step of obtaining the input impedance of described impedance matching network.
6. impedance matching methods according to claim 1 is characterized in that, is less than or equal to the second default precision if judge described imaginary impedance deviation, then continues to carry out the described step of obtaining the input impedance of described impedance matching network.
7. impedance matching methods according to claim 1 is characterized in that, described input impedance of obtaining described impedance matching network also comprises afterwards:
Whether the output impedance of judging the input impedance of described impedance matching network and described radio-frequency power supply conjugate impedance match;
If the output impedance of judging the input impedance of described impedance matching network and described radio-frequency power supply is conjugate impedance match not, carry out describedly according to the output impedance of described radio-frequency power supply and the input impedance of described impedance matching network, obtain the step of impedance real part deviation and imaginary impedance deviation;
If judge the input impedance of described impedance matching network and the output impedance conjugate impedance match of described radio-frequency power supply, continue to carry out the described step of obtaining the input impedance of described impedance matching network.
8. impedance matching system, be used for making the impedance matching between radio-frequency power supply and the load, it comprises: be arranged on the impedance matching network between described radio-frequency power supply and the described load, so that the output impedance of the input impedance of described impedance matching network and described radio-frequency power supply coupling, described impedance matching network comprises: transformer, inductance and electric capacity, described transformer elementary be connected radio-frequency power supply and connect, it is characterized in that, described inductance, described electric capacity and described load are connected on the secondary of described transformer successively, thereby make the size of described electric capacity not affect the real part of described input impedance.
9. impedance matching system according to claim 8 is characterized in that, also comprises control unit, and described control unit comprises:
Computing module is used for according to the output impedance of described radio-frequency power supply and the input impedance of described impedance matching network, obtains impedance real part deviation and imaginary impedance deviation;
The first judge module is used for judging that described impedance real part deviation whether greater than the first default precision, if judge described impedance real part deviation greater than the first default precision, then obtains the turn ratio adjustment amount according to described impedance real part deviation;
The first Executive Module is used for according to the described turn ratio adjustment amount that described the first judge module obtains the turn ratio of described transformer being adjusted;
The second judge module is used for judging described imaginary impedance deviation greater than the second default precision, and, if judge described imaginary impedance deviation greater than the second default precision, obtain the electric capacity adjustment amount according to described imaginary impedance deviation;
The second Executive Module is used for according to the electric capacity adjustment amount that described the second judge module obtains described electric capacity being adjusted.
10. impedance matching system according to claim 9 is characterized in that, also comprises:
The input impedance detecting unit is used for obtaining the output impedance of described radio-frequency power supply and the input impedance of described impedance matching network;
The output impedance of described radio-frequency power supply comprises output impedance real part and output impedance imaginary part; The input impedance of described impedance matching network comprises input impedance real part and input impedance imaginary part;
Described computing module obtains described impedance real part deviation according to the difference of described output impedance real part and described input impedance real part, and obtains described imaginary impedance deviation according to the difference of described output impedance imaginary part and described input impedance imaginary part.
11. impedance matching system according to claim 10 is characterized in that, described input impedance real part is Z
a=n
2R
L, described input impedance imaginary part is
Wherein, n is the turn ratio of primary coil and the secondary coil of described transformer, R
LBe load equivalent resistance, C
LBe load equivalent electric capacity, L is inductance, and C is electric capacity, and ω is impedance factor, and j is the imaginary part of symbol.
12. impedance matching system according to claim 9 is characterized in that, also comprises:
The output impedance detecting unit is used for the output impedance of obtaining described radio-frequency power supply.
13. impedance matching system according to claim 9 is characterized in that, also comprises:
The 3rd judging unit, whether the output impedance that is used for judging the input impedance of described impedance matching network and described radio-frequency power supply conjugate impedance match.
14. plasma processing device, comprise radio-frequency power supply, reaction chamber and impedance matching system, described impedance matching system is arranged between described radio-frequency power supply and the described reaction chamber, so that the impedance matching between described radio-frequency power supply and the described reaction chamber, it is characterized in that described impedance matching system adopts the described impedance matching system of claim 8-13 any one.
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Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104743503A (en) * | 2013-12-31 | 2015-07-01 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Deep silicon etching process matching method, deep silicon etching process matching system and deep silicon etching process equipment |
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US11990769B2 (en) | 2022-07-18 | 2024-05-21 | Caps Medical Ltd. | Configurable plasma generating system |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030146803A1 (en) * | 2002-02-01 | 2003-08-07 | Pickard Daniel S. | Matching network for RF plasma source |
CN101291141A (en) * | 2007-04-19 | 2008-10-22 | 株式会社普来马特 | Resistance matching method and system for performing the method |
CN101374381A (en) * | 2007-08-20 | 2009-02-25 | 清华大学 | Method and system for matching radio frequency impedance |
CN101741337A (en) * | 2009-11-24 | 2010-06-16 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Impedance adjusting device and impedance matching system comprising same |
-
2012
- 2012-04-16 CN CN201210110740.1A patent/CN103377869B/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030146803A1 (en) * | 2002-02-01 | 2003-08-07 | Pickard Daniel S. | Matching network for RF plasma source |
CN101291141A (en) * | 2007-04-19 | 2008-10-22 | 株式会社普来马特 | Resistance matching method and system for performing the method |
CN101374381A (en) * | 2007-08-20 | 2009-02-25 | 清华大学 | Method and system for matching radio frequency impedance |
CN101741337A (en) * | 2009-11-24 | 2010-06-16 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Impedance adjusting device and impedance matching system comprising same |
Cited By (14)
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---|---|---|---|---|
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CN104743503A (en) * | 2013-12-31 | 2015-07-01 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Deep silicon etching process matching method, deep silicon etching process matching system and deep silicon etching process equipment |
CN105471404A (en) * | 2014-09-11 | 2016-04-06 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Impedance matching network and plasma processing device |
CN107403711B (en) * | 2016-05-18 | 2019-07-05 | 东京毅力科创株式会社 | Plasma processing apparatus |
CN107403711A (en) * | 2016-05-18 | 2017-11-28 | 东京毅力科创株式会社 | Plasma processing apparatus |
CN106028615A (en) * | 2016-08-03 | 2016-10-12 | 南京工业大学 | Large-area low-temperature plasma generation device |
CN106028615B (en) * | 2016-08-03 | 2018-03-30 | 南京工业大学 | A kind of large area low temperature plasma generating means |
CN106779013B (en) * | 2016-12-20 | 2020-03-31 | 中国科学技术大学 | Determination method and determination system of sensitization circuit and sensitization RFID sensing label |
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