CN101741337A - Impedance adjusting device and impedance matching system comprising same - Google Patents
Impedance adjusting device and impedance matching system comprising same Download PDFInfo
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Abstract
The invention provides a medium/low-frequency impedance adjusting device and an impedance matching system comprising the same, which can ensure that the impedance of a load and the impedance adjusting device is conjugate and matched with the characteristic impedance of a power supply. The device comprises a transformer and a capacitor C1, wherein the transformer is orderly connected with the capacitor C1 and the load to form a circuit. The transformer (the ratio of the number of turns of a primary coil to the number of turns of a secondary coil) and a capacitance value of the capacitor C1 are adjusted, so that impedance matching between the impedance of the load and the impedance adjusting device and the characteristic impedance of the power supply can be realized to further load the power of the medium/low-frequency power supply to the load and avoids power loss.
Description
Technical field
The present invention relates to the impedance match technique field, particularly relate to a kind of in, low-frequency impedance adjusting device and comprise the impedance matching system of this device.
Background technology
Impedance matching is meant that signal source or transmission line are with a kind of suitable collocation mode between the load.
At present, plasma apparatus is widely used in the manufacture crafts such as semiconductor, solar cell and flat panel display, as various thin deposited films, or plasma etching etc.Present plasma generation mode is a lot, the power that is applied is divided from frequency range, generally include direct current, radio frequency and microwave, and radio frequency is divided into: low frequency (30kHz-300kHz), intermediate frequency (300kHz-2MHz), high frequency (2MHz-30MHz), hyperfrequency (30MHz-300MHz).
In semiconductor etching process, adopt the high band power supply usually as power source.In PECVD (plasma enhanced chemical vapor deposition) deposition micro crystal silicon technology, present trend is to adopt hyperfrequency as power source.And prepare in the equipment of antireflection film at crystal silicon solar PECVD, in order to improve the passivation effect of deposited film, in the employing, low frequency become present trend as power source.
As everyone knows, the radio-frequency power supply of employing itself has the characteristic impedance of himself, be generally 50 Ω, and for plasma load, its load impedance generally can not be 50 Ω.According to transmission line theory, when the impedance of the characteristic impedance of power supply and load conjugation not, i.e. impedance does not match, the radio-frequency power supply power output can't be loaded in the load, have power reflection, can cause power dissipation like this, the power of reflected back power supply can have infringement to power supply itself simultaneously.Therefore, usually need between power supply and load, add an impedance adjustment matching network, as shown in Figure 1, radio-frequency power supply power is loaded in the load by the impedance adjustment matching network, described adjusting matching network makes that the impedance of looking backward from adjusting matching network input is 50 Ω, characteristic impedance (50 Ω) conjugation with power supply reaches impedance matching, thereby radio-frequency power is loaded in the load fully.
Existing impedance adjustment matching network has two kinds of implementations, respectively as shown in Figures 2 and 3.
With reference to Fig. 2 .1,2.2,2.3, at present at high band (2MHz-30MHz), the impedance adjustment matching network adopts some by the network that electric capacity and inductance are formed usually, and L type, π type and T type network etc. are arranged.The shortcoming of this impedance adjustment is: networks such as L type, π type and T type are applicable to high-frequency band, but for low frequency (30kHz-300kHz), intermediate frequency (300kHz-2MHz), selecting suitable electric capacity and inductance to form above matching network is the comparison difficulty.
Summary of the invention
Technical problem to be solved by this invention provide a kind of in, low-frequency impedance adjusting device and comprise the impedance matching system of this device, can make the impedance and the power supply characteristic impedance conjugate impedance match that comprise load and impedance regulating.
In order to address the above problem, the invention discloses a kind of impedance regulating, be used for impedance matching is carried out in load, comprising: transformer and capacitor C 1, described transformer and capacitor C 1 and load connect and compose path successively.
Preferably, described device also comprises: inductance L 1, described transformer is connected with described inductance L 1 earlier, connects and composes path successively with capacitor C 1 and load again.
Preferably, described device also comprises: capacitor C 2, connect with described inductance L 1.
Preferably, described device also comprises: inductance L 2, connect with described capacitor C 1.
Wherein, the value of described electric capacity and inductance is adjustable or fixing.
Wherein, described transformer is adjustable isolating transformer or autotransformer.
The present invention also provides a kind of impedance matching system, comprising: in, low-frequency power, impedance regulating and load, wherein, described impedance regulating comprises:
Transformer and capacitor C 1, the input of described transformer with in, low-frequency power links to each other, the output of described transformer and capacitor C 1 and described load connect and compose path successively;
Feasible impedance and the described power supply characteristic impedance conjugate impedance match that comprises load and impedance regulating of described impedance regulating.
Preferably, described impedance regulating also comprises: inductance L 1, the output of described transformer is connected with described inductance L 1 earlier, and then connects and composes path successively with capacitor C 1 and load.
Preferably, the value of electric capacity in the described impedance regulating and inductance is adjustable or fixing.
Preferably, described load is a plasma load.
Compared with prior art, the present invention has the following advantages:
At first, the invention provides a kind of in, the low-frequency impedance adjusting device, this device comprises transformer and capacitor C 1, described transformer and capacitor C 1 and load connect and compose path successively, by regulating the value of transformer (first, inferior coil ratio) and capacitor C 1, can make the impedance that comprises load and impedance regulating and power supply characteristic impedance realize impedance matching, thus in, low-frequency power power is loaded in the load, avoided power loss.
Secondly, in described impedance regulating, the capacitor C 1 of connecting with load can be used as capacitance simultaneously, in the plasma discharge process with on the electrode that capacitance links to each other, can form the negative automatic bias of a direct current, this back bias voltage centering, low frequency discharge extremely important, it can improve the stability of discharge, even influences process results.
Once more, impedance regulating can also comprise inductance L 1, and first the connection again with described inductance L 1 of described transformer connects and composes path successively with capacitor C 1 and load, by regulating transformer, capacitor C 1 and inductance L 1, can realize impedance matching better, further avoid power loss.
Description of drawings
Fig. 1 is the structure chart of radio system in the prior art;
Fig. 2 .1,2.2, the 2.3rd, prior art one medium-high frequency impedance matching network schematic diagram;
Fig. 3 be the embodiment of the invention one described a kind of in, low-frequency impedance matching system schematic diagram;
Fig. 4 be the embodiment of the invention two described a kind of in, low-frequency impedance matching system schematic diagram;
Fig. 5 be the embodiment of the invention three described a kind of in, low-frequency impedance matching system schematic diagram;
Fig. 6 be the embodiment of the invention four described a kind of in, low-frequency impedance matching system schematic diagram.
Embodiment
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, the present invention is further detailed explanation below in conjunction with the drawings and specific embodiments.
The invention provides a kind of in, the low-frequency impedance adjusting device, this device comprises transformer and electric capacity, realize impedance matching by regulating transformer (first, inferior coil ratio) and capacitance, can make the impedance and the power supply characteristic impedance that comprise load and impedance regulating.
Be elaborated below by a plurality of embodiment.
Embodiment one:
With reference to Fig. 3, be the embodiment of the invention one described a kind of in, low-frequency impedance matching system schematic diagram.
During described system mainly comprises, low-frequency power, impedance regulating (dotted portion among the figure) and load.Wherein, described impedance regulating comprises transformer and a capacitor C, and during the input of transformer inserts, low-frequency power, the output of transformer links to each other with described capacitor C.Wherein, capacitor C can be a fixed capacity, also can be tunable capacitor.
The present invention does not limit the type of described transformer, in the present embodiment, transformer is by the primary and secondary isolating transformer of forming, isolating transformer elementary with in, low-frequency power links to each other, the secondary and described capacitor C and the described load of isolating transformer connect and compose path successively.
The secondary tap of described isolating transformer is a plurality of, and this isolating transformer just can be regulated secondary tap like this, promptly regulates primary and secondary coil ratio.For example, described isolating transformer has 9 secondary taps, as shown in the figure, and only explanation as an example.
How the described impedance regulating of following surface analysis realizes impedance matching:
For in, low-frequency power, its power supply characteristic impedance is generally 50 Ω, is a real number; And for load, its impedance generally all is plural R+jX (R is the resistance of load, and X is the reactance of load, and impedance is that resistance adds reactance).After connecting by the described impedance regulating of present embodiment in described, between low-frequency power and the load, in actual applications, because the transformer in the impedance regulating has certain inductance value, impedance regulating also comprises an electric capacity simultaneously, therefore look to load from primary, the impedance that comprises load and impedance regulating can be approximated to be a real number, thereby realizes impedance matching with the power supply characteristic impedance.Especially, the impedance of the big and load of the inductance value of the transformer in practical application hour, easier realization impedance matching.
In addition, described capacitor C and load are cascaded, not only play the effect of impedance matching, simultaneously can be used as capacitance, for plasma load, in the plasma discharge process with on the electrode that capacitance links to each other, can form the negative automatic bias of a direct current, back bias voltage centering, low frequency discharge are very important, it can improve the stability of discharge, even influences process results.
Embodiment two:
With reference to Fig. 4, be the embodiment of the invention two described a kind of in, low-frequency impedance matching system schematic diagram.
During described system mainly comprises, low-frequency power, impedance regulating (dotted portion among the figure) and load.Wherein, described impedance regulating comprises transformer, a capacitor C and an inductance L, and during the input of transformer inserts, low-frequency power, the output of transformer links to each other with described capacitor C, inductance L.
The present invention does not limit the type of described transformer, in the present embodiment, transformer is by the primary and secondary isolating transformer of forming, isolating transformer elementary with in, low-frequency power links to each other, the secondary elder generation of isolating transformer is connected with described inductance L and connects and composes path successively with described capacitor C and described load.Certainly, inductance L can with capacitor C, load (as shown in Figure 4) in parallel, the inductance L (not shown) of also can connecting with capacitor C, load.
The secondary tap of described isolating transformer is a plurality of, and this isolating transformer just can be regulated secondary tap like this, promptly regulates primary and secondary coil ratio.For example, described isolating transformer has 9 secondary taps, as shown in the figure, and only explanation as an example.
Present embodiment is by secondary connection capacitor C and inductance L at isolating transformer, can eliminate the imaginary part among the load impedance R+jX, thereby making the resistance value that comprises load and impedance regulating is a real number, realizes conjugate impedance match with power supply characteristic impedance (being real number).
Concrete computational process is as follows:
If load impedance is R
L+ jX
L(for capacitive load, X
LBe generally negative), operating frequency is f, and electric capacity is C, and inductance value is L, and primary and secondary turn ratio are n, then the impedance of looking to load from the transformer input this moment is:
Real part is
Imaginary part is
Then during impedance matching, make the impedance of R=power supply characteristic, X=0.
For example, if load is a plasma load, in, the characteristic impedance of low frequency radio frequency power supply is 50 Ω, then can make R=50 (Ω), X=0.
Above-mentioned capacitor C can be a fixed capacity, also can be tunable capacitor; Equally, described inductance L can be a fixed inductance, also can be controllable impedance.Among Fig. 4, described capacitor C and inductance L are all adjustable, secondary tap (mainly regulating primary and secondary coil ratio) by regulating transformer and capacitor C, inductance L, realization impedance matching.
Certainly, capacitor C and inductance L only are a kind of implementations as adjusting components and parts all among Fig. 4, also can be the compound mode that fixed capacity C adds controllable impedance L, or tunable capacitor C add the fixedly compound mode of inductance L.
Preferably, capacitor C and load in the described impedance regulating are cascaded, not only can be used for impedance matching, simultaneously can be used as capacitance, for plasma load, in the plasma discharge process with on the electrode that capacitance links to each other, can form the negative automatic bias of a direct current, back bias voltage centering, low frequency discharge are very important, it can improve the stability of discharge, even influences process results.
Embodiment three:
Embodiment three provides a kind of transformer to be different from the impedance-matching device of embodiment two.
With reference to Fig. 5, be the embodiment of the invention three described a kind of in, low-frequency impedance matching system schematic diagram.
During described system mainly comprises, low-frequency power, impedance regulating (dotted portion among the figure) and load.Wherein, described impedance regulating comprises autotransformer, a capacitor C and an inductance L, the input of autotransformer with in, low-frequency power links to each other, the output of autotransformer is connected with described inductance L earlier, and then connects and composes path successively with described capacitor C and described load.Certainly, inductance L can with capacitor C, load (as shown in Figure 5) in parallel, the inductance L (not shown) of also can connecting with capacitor C, load.
Present embodiment and the embodiment two only type of transformer are different, and therefore, present embodiment also has following characteristics:
(1) the output tap of autotransformer also is a plurality of, for example 9, as shown in the figure, only explanation as an example;
(2) the impedance computation process is identical with embodiment two, at this slightly; Therefore, the resistance value that comprises load and impedance regulating is a real number, realizes conjugate impedance match with power supply characteristic impedance (being real number)
(3) capacitor C can be a fixed capacity, also can be tunable capacitor; Equally, described inductance L can be a fixed inductance, also can be controllable impedance.Among Fig. 5, described capacitor C and inductance L are all adjustable, output tap (mainly regulating primary and secondary coil ratio) by regulating autotransformer and capacitor C, inductance L, realization impedance matching; Certainly, also can be the compound mode that fixed capacity C adds controllable impedance L, or tunable capacitor C add the fixedly compound mode of inductance L;
(4) capacitor C in the impedance regulating not only can be used for impedance matching, play capacitance simultaneously, for plasma load, in the plasma discharge process with on the electrode that capacitance links to each other, can form the negative automatic bias of a direct current, back bias voltage can improve the stability of discharge, even influences process results.
Embodiment four:
The impedance matching system that embodiment four provides can comprise a plurality of capacitor C or a plurality of inductance L.
With reference to Fig. 6, be the embodiment of the invention four described a kind of in, low-frequency impedance matching system schematic diagram.
During described system mainly comprises, low-frequency power, impedance regulating (dotted portion among the figure) and load.Wherein, described impedance regulating comprises transformer, capacitor C 1, capacitor C 2 and an inductance L.Do not limit the type of transformer, in the present embodiment, transformer can certainly be an isolating transformer for the autotransformer (as shown in the figure) of a plurality of (as 7) output tap is arranged.
The input of described autotransformer with in, low-frequency power links to each other, the output of autotransformer is connected with inductance L successively with capacitor C 2 earlier, and then connects and composes path successively with described capacitor C 1 and described load.
Present embodiment is not both with the maximum of embodiment two, three: the inductance L capacitor C 2 of having connected, and then be connected with the output of transformer.Therefore, the impedance computation of looking to load from the transformer input is also different, specific as follows:
If load impedance is R
L+ jX
L(for capacitive load, X
LBe generally negative), operating frequency is f, and electric capacity is respectively C1 and C2, and inductance value is L ', and primary and secondary turn ratio are n, then the impedance of looking to load from the transformer input this moment:
Real part is
Wherein
Imaginary part is
Then during impedance matching, make the impedance of R=power supply characteristic, X=0.
For example, if load is a plasma load, in, the characteristic impedance of low frequency radio frequency power supply is 50 Ω, then can make R=50 (Ω), X=0.
Above-mentioned capacitor C 1 and C2 can be fixed capacities, also can be tunable capacitors; Equally, described inductance L can be a fixed inductance, also can be controllable impedance.Among Fig. 6, capacitor C 1 is a fixed capacity, and capacitor C 2 is a tunable capacitor, and inductance L is a fixed inductance, regulate by output tap and capacitor C 2 to autotransformer like this, realization comprises the conjugate impedance match of the impedance and the power supply characteristic impedance of load and impedance regulating.
Certainly, can make also that capacitor C 2 is fixing, inductance L is adjustable, perhaps the two is all adjustable; Perhaps, capacitor C 1 (adjustable or fixing) electric capacity or the inductance of can also connecting again can be connected on capacitor C 1 between load; Perhaps, the output of transformer inductance in parallel again, or the like.Impedance regulating shown in Figure 6 only is a kind of example of more convenient adjusting, if it is many more to adjust components and parts, then needs the variable regulated many more in the impedance computation formula, and the method for adjusting is also complicated more.
Preferably, capacitor C 1 in the impedance regulating not only can be used for impedance matching, play capacitance simultaneously, for plasma load, in the plasma discharge process with on the electrode that capacitance links to each other, can form the negative automatic bias of a direct current, back bias voltage can improve the stability of discharge, even influences process results.
Comprehensive above-mentioned four embodiment can be summarized as follows content of the present invention:
Impedance regulating of the present invention can comprise: transformer and an electric capacity, the output of described transformer and electric capacity and load connect and compose path successively.
Further, described impedance regulating can also comprise: an inductance.A kind of preferred connected mode is: the output of described transformer connects and composes path with inductance earlier, and the output of described transformer connects and composes path successively with electric capacity and load more then.Wherein, do not limit the type of transformer, described electric capacity and inductance are adjustable or fixing.
In addition, described impedance regulating can also comprise other electric capacity or inductance again, and connected mode is as described in the above-mentioned embodiment.
During described impedance regulating is added in, between low-frequency power and the load, radio-frequency power supply power is loaded in the load by impedance regulating, described impedance regulating makes the impedance of looking to load from the device input and characteristic impedance (50 Ω) conjugation of power supply, reach impedance matching, thereby radio-frequency power is loaded in the load fully.
Each embodiment in this specification all adopts the mode of going forward one by one to describe, and what each embodiment stressed all is and the difference of other embodiment that identical similar part is mutually referring to getting final product between each embodiment.
More than to provided by the present invention a kind of in, low-frequency impedance adjusting device and comprise the impedance matching system of this device, be described in detail, used specific case herein principle of the present invention and execution mode are set forth, the explanation of above embodiment just is used for helping to understand method of the present invention and core concept thereof; Simultaneously, for one of ordinary skill in the art, according to thought of the present invention, the part that all can change in specific embodiments and applications, in sum, this description should not be construed as limitation of the present invention.
Claims (10)
1. an impedance regulating is used for impedance matching is carried out in load, it is characterized in that, comprising: transformer and capacitor C 1, described transformer and capacitor C 1 and load connect and compose path successively.
2. device according to claim 1 is characterized in that, also comprises: inductance L 1, described transformer is connected with described inductance L 1 earlier, connects and composes path successively with capacitor C 1 and load again.
3. device according to claim 2 is characterized in that, also comprises: capacitor C 2, connect with described inductance L 1.
4. device according to claim 2 is characterized in that, also comprises: inductance L 2, connect with described capacitor C 1.
5. according to the arbitrary described device of claim 2 to 4, it is characterized in that: the value of described electric capacity and inductance is adjustable or fixing.
6. according to the arbitrary described device of claim 2 to 4, it is characterized in that: described transformer is adjustable isolating transformer or autotransformer.
7. an impedance matching system is characterized in that, comprising: in, low-frequency power, impedance regulating and load, wherein, described impedance regulating comprises:
Transformer and capacitor C 1, the input of described transformer with in, low-frequency power links to each other, the output of described transformer and capacitor C 1 and described load connect and compose path successively;
Feasible impedance and the described power supply characteristic impedance conjugate impedance match that comprises load and impedance regulating of described impedance regulating.
8. system according to claim 7 is characterized in that, described impedance regulating also comprises: inductance L 1, the output of described transformer is connected with described inductance L 1 earlier, and then connects and composes path successively with capacitor C 1 and load.
9. system according to claim 8 is characterized in that: the electric capacity in the described impedance regulating and the value of inductance are adjustable or fixing.
10. according to the arbitrary described system of claim 7 to 9, it is characterized in that: described load is a plasma load.
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| CN103377869A (en) * | 2012-04-16 | 2013-10-30 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Impedance matching method, impedance matching system, and plasma processing device |
| CN104332379A (en) * | 2014-09-02 | 2015-02-04 | 清华大学 | Plasma discharging device |
| CN104349567A (en) * | 2013-07-29 | 2015-02-11 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Radio frequency power supply system and a method for performing impedance matching by utilizing radio frequency power supply system |
| CN104465290A (en) * | 2013-09-24 | 2015-03-25 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Impedance matching method for radio-frequency pulse system and radio-frequency pulse system |
| CN104752139A (en) * | 2013-12-30 | 2015-07-01 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Radio-frequency pulse system and impedance matching method thereof |
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| JP2006503504A (en) * | 2002-10-17 | 2006-01-26 | アンビエント・コーポレイション | Data combiner configuration for power line communication. |
| JP4975291B2 (en) * | 2004-11-09 | 2012-07-11 | 株式会社ダイヘン | Impedance matching device |
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| CN103377869A (en) * | 2012-04-16 | 2013-10-30 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Impedance matching method, impedance matching system, and plasma processing device |
| CN103377869B (en) * | 2012-04-16 | 2016-02-10 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Impedance matching methods, impedance matching system and plasma processing device |
| CN104349567A (en) * | 2013-07-29 | 2015-02-11 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Radio frequency power supply system and a method for performing impedance matching by utilizing radio frequency power supply system |
| CN104465290A (en) * | 2013-09-24 | 2015-03-25 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Impedance matching method for radio-frequency pulse system and radio-frequency pulse system |
| CN104465290B (en) * | 2013-09-24 | 2017-02-08 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Impedance matching method for radio-frequency pulse system and radio-frequency pulse system |
| CN104752139A (en) * | 2013-12-30 | 2015-07-01 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Radio-frequency pulse system and impedance matching method thereof |
| CN104752139B (en) * | 2013-12-30 | 2017-03-01 | 北京北方微电子基地设备工艺研究中心有限责任公司 | A kind of radio-frequency pulse system and its impedance matching methods |
| CN104332379A (en) * | 2014-09-02 | 2015-02-04 | 清华大学 | Plasma discharging device |
| CN104795878A (en) * | 2015-05-13 | 2015-07-22 | 重庆邮电大学 | Self-adaptive impedance matching circuit design method of wireless rechargeable car |
| CN107026629A (en) * | 2015-10-15 | 2017-08-08 | 朗姆研究公司 | Mutual induction filter |
| CN107026629B (en) * | 2015-10-15 | 2020-12-25 | 朗姆研究公司 | Mutual inductance filter |
| CN107086879A (en) * | 2017-02-27 | 2017-08-22 | 宇龙计算机通信科技(深圳)有限公司 | Adjustable RF circuit, communication terminal and adjustable RF circuit control method |
| CN110797251A (en) * | 2018-08-02 | 2020-02-14 | Asm Ip控股有限公司 | Substrate processing apparatus and substrate processing method |
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| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address | ||
| CP03 | Change of name, title or address |
Address after: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Patentee after: Beijing North China microelectronics equipment Co Ltd Address before: 100016, building 2, block M5, East Jiuxianqiao Road, Chaoyang District, Beijing Patentee before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |