CN103367373A - 固态成像元件和电子设备 - Google Patents

固态成像元件和电子设备 Download PDF

Info

Publication number
CN103367373A
CN103367373A CN2013100892540A CN201310089254A CN103367373A CN 103367373 A CN103367373 A CN 103367373A CN 2013100892540 A CN2013100892540 A CN 2013100892540A CN 201310089254 A CN201310089254 A CN 201310089254A CN 103367373 A CN103367373 A CN 103367373A
Authority
CN
China
Prior art keywords
film
antireflection film
state imaging
solid
imaging element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2013100892540A
Other languages
English (en)
Chinese (zh)
Inventor
桝田佳明
本渡惠太
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Semiconductor Solutions Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of CN103367373A publication Critical patent/CN103367373A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/151—Geometry or disposition of pixel elements, address lines or gate electrodes
    • H10F39/1515—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8067—Reflectors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Surface Treatment Of Optical Elements (AREA)
CN2013100892540A 2012-03-28 2013-03-20 固态成像元件和电子设备 Pending CN103367373A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012073725A JP2013207053A (ja) 2012-03-28 2012-03-28 固体撮像素子、電子機器
JP2012-073725 2012-03-28

Publications (1)

Publication Number Publication Date
CN103367373A true CN103367373A (zh) 2013-10-23

Family

ID=49234491

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2013100892540A Pending CN103367373A (zh) 2012-03-28 2013-03-20 固态成像元件和电子设备

Country Status (3)

Country Link
US (1) US9337364B2 (https=)
JP (1) JP2013207053A (https=)
CN (1) CN103367373A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113692647A (zh) * 2019-05-10 2021-11-23 索尼半导体解决方案公司 摄像元件和电子设备

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6274567B2 (ja) 2014-03-14 2018-02-07 キヤノン株式会社 固体撮像装置及び撮像システム
JP2015216187A (ja) * 2014-05-09 2015-12-03 ソニー株式会社 固体撮像素子および電子機器
JP2016051746A (ja) * 2014-08-29 2016-04-11 ソニー株式会社 固体撮像装置、および電子装置
JP2018061060A (ja) * 2017-12-28 2018-04-12 キヤノン株式会社 固体撮像装置及び撮像システム
JP2020126961A (ja) * 2019-02-06 2020-08-20 ソニーセミコンダクタソリューションズ株式会社 撮像装置および撮像システム
CN114946026A (zh) 2019-12-12 2022-08-26 布罗利思感测科技公司 固态设备
KR20230002407A (ko) * 2020-04-28 2023-01-05 소니 세미컨덕터 솔루션즈 가부시키가이샤 고체 촬상 장치 및 전자 기기

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7816641B2 (en) * 2007-12-28 2010-10-19 Candela Microsystems (S) Pte. Ltd. Light guide array for an image sensor
US20110139966A1 (en) * 2009-12-11 2011-06-16 Sony Corporation Solid-state imaging element and method for manufacturing the same
CN102208425A (zh) * 2010-03-31 2011-10-05 索尼公司 固体摄像装置、固体摄像装置的制造方法和电子设备

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003209235A (ja) * 2002-01-16 2003-07-25 Sony Corp 固体撮像素子及びその製造方法
JP2006041026A (ja) 2004-07-23 2006-02-09 Matsushita Electric Ind Co Ltd 固体撮像素子およびその製造方法
JP5082855B2 (ja) * 2005-11-11 2012-11-28 株式会社ニコン 反射防止膜を有する固体撮像装置および表示装置並びにその製造方法
JP2008192951A (ja) * 2007-02-07 2008-08-21 Matsushita Electric Ind Co Ltd 固体撮像装置およびその製造方法
JP2010283225A (ja) * 2009-06-05 2010-12-16 Panasonic Corp 固体撮像装置
JP2011054904A (ja) * 2009-09-04 2011-03-17 Panasonic Corp 固体撮像体装置及びその製造方法
JP2013191247A (ja) * 2010-07-09 2013-09-26 Panasonic Corp 光検出器とそれを用いた光学ヘッドおよび光情報装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7816641B2 (en) * 2007-12-28 2010-10-19 Candela Microsystems (S) Pte. Ltd. Light guide array for an image sensor
US20110139966A1 (en) * 2009-12-11 2011-06-16 Sony Corporation Solid-state imaging element and method for manufacturing the same
CN102208425A (zh) * 2010-03-31 2011-10-05 索尼公司 固体摄像装置、固体摄像装置的制造方法和电子设备

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113692647A (zh) * 2019-05-10 2021-11-23 索尼半导体解决方案公司 摄像元件和电子设备

Also Published As

Publication number Publication date
JP2013207053A (ja) 2013-10-07
US20130258154A1 (en) 2013-10-03
US9337364B2 (en) 2016-05-10

Similar Documents

Publication Publication Date Title
US10770495B1 (en) Solid-state imaging device, manufacturing method thereof, and camera with alternatively arranged pixel combinations
CN108881750B (zh) 包括阻光图案的光学传感器以及电子设备
TWI654750B (zh) 固態影像擷取裝置及其製造方法與電子設備
US8633559B2 (en) Solid-state imaging device, method of manufacturing the same, and electronic apparatus
US8330847B2 (en) Solid-state imaging device with improved light use efficiency
US9647026B2 (en) Solid-state image pickup device, method of manufacturing the same, and electronic apparatus
CN102468315B (zh) 固态成像装置和电子设备
CN103367373A (zh) 固态成像元件和电子设备
US12464840B2 (en) Solid-state imaging device and electronic device
US20200348455A1 (en) Imaging systems with improved microlenses
JP2011243885A (ja) 固体撮像装置及びその製造方法
JP2011023455A (ja) 固体撮像装置

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C41 Transfer of patent application or patent right or utility model
TA01 Transfer of patent application right

Effective date of registration: 20160909

Address after: Kanagawa

Applicant after: SONY semiconductor solutions

Address before: Tokyo, Japan, Japan

Applicant before: Sony Corp

RJ01 Rejection of invention patent application after publication

Application publication date: 20131023

RJ01 Rejection of invention patent application after publication