CN103367078B - A kind of exhaust activation method of photoelectric device - Google Patents
A kind of exhaust activation method of photoelectric device Download PDFInfo
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- CN103367078B CN103367078B CN201310321644.6A CN201310321644A CN103367078B CN 103367078 B CN103367078 B CN 103367078B CN 201310321644 A CN201310321644 A CN 201310321644A CN 103367078 B CN103367078 B CN 103367078B
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Abstract
The invention discloses a kind of exhaust activation method of photoelectric device, the present invention is by great many of experiments screening electrion debarring process, steam antimony treatment process, draw the technique that potassium activates and draws caesiation, especially adopt different temperatures to carry out eliminating alkali metal technique to multiplication region and cathodic region, whole process operability is strong, can get rid of the unnecessary vapour of an alkali metal in photoelectric device to greatest extent, reduce the dark current of photomultiplier, improve photoelectric device Performance and quality; The photoelectric device quality prepared is high, and performance is excellent, good stability, practical.
Description
Technical field
The present invention relates to a kind of preparation method of photoelectric device, be specifically related to a kind of photoelectric device, as the exhaust activation method of photomultiplier.
Background technology
Photoelectric device, if photomultiplier is in preparation process, except the exhaust air technique general by electron tube carries out, also need complete the activation technology of photocathode and dynode in exhaust process, and it includes in fact exhaust and activates two processes.Because the shell of photoelectric device is made up of nearly 20 ceramic rings and 20 alternate sealing-ins of metal ring, its anode-cathode distance is minimum, flow resistance is very big, if take traditional photoelectric device exhaust air technique cannot remove the unnecessary alkali metal be trapped in pipe, the dark current of photomultiplier is very large, and cause this pipe second-rate, qualification rate is extremely low, poor-performing, can not meet the standard of high request.
Therefore, necessary on the basis of prior art R & D design one effectively can remove unnecessary alkali metal in photomultiplier, be trapped in the shell inner chamber of photoelectric device to cause interelectrode ohm to leak electricity (dark current) thus reach and improve photoelectric device performance.
Summary of the invention
Goal of the invention: the object of the invention is to solve the deficiencies in the prior art, there is provided a kind of workable, the unnecessary vapour of an alkali metal in photoelectric device can be got rid of to greatest extent, reduce the dark current of photomultiplier, improve the exhaust activation method of the photomultiplier of photoelectric device Performance and quality.
Technical scheme: in order to realize above object, the technical solution used in the present invention is:
An exhaust activation method for photoelectric device, it comprises the following steps:
(1) vacuum system of the blast pipe of photoelectric device with vacuum exhaust platform is connected, then opens vacuum exhaust platform, photoelectric device is bled, when the vacuum degree in photoelectric device reaches 5 × 10
-3pa to 5.5 × 10
-3during Pa, carry out being warmed to 300 DEG C to 400 DEG C after taking out 2h to 4h in advance to photoelectric device, insulation 4h to 8h carries out degasification, is then down to room temperature;
(2) then hydrogen cleaning negative electrode is passed into photoelectric device dull and stereotyped, the deburring of 1200V to 1500V electrion is carried out to focusing electrode, dynode at different levels, final stage dynode, anode;
(3) then antimony power circuit is steamed in photoelectric device access and carry out the process of steaming antimony, steaming antimony electric current is 1A ~ 1.3A, steams 5 to 10 minutes antimony time;
(4) open high frequency furnace, carry out degasification in advance, until the vacuum degree in potassium pipe is not less than 1 × 10 with high frequency coil baking potassium pipe and caesium pipe
-4stop baking during Pa, then bake potassium steam and rush in the bead that is connected with blast pipe, excision potassium pipe;
(5) respectively the first dynode of the negative electrode of photoelectric device and photoelectric device is received on activating power, tungsten filament lamp sources is fixed on 40 ~ 50mm place, photoelectric device window front end, multiplication region temperature is made to control at 200 DEG C ~ 250 DEG C, cathodic region temperature controls at 210 DEG C ~ 220 DEG C, potassium steam in bead is rushed in photoelectric device, enters potassium and activate, repeatedly for several times until cathode plane becomes aubergine, extract bead, then dry the remaining potassium delustered in electric device;
(6) high frequency furnace is opened, with high frequency coil baking, to the degasification of caesium pipe, until the vacuum degree in caesium pipe is not less than 1 × 10
-4stop baking during Pa, bake caesium steam and rush in another bead of being connected with blast pipe;
(7) at the temperature of 220 DEG C to 250 DEG C, draw caesium steam in bead enters in photoelectric device, activates slowly, after the photoelectric current of photoelectric device pipe rises to maximum, extracts caesium pipe;
(8) the multiplication region position in photoelectric device is kept heating-up temperature 200 DEG C ~ 250 DEG C, and the cathodic region in photoelectric device is kept heating-up temperature 150 DEG C ~ 200 DEG C, toast 24h to 72h respectively, dry alkali metal remaining in the electric device pipe that delusters, last sealed-off photoelectric device pipe.
Preferably, the exhaust activation method of above-described photoelectric device, step (1) reaches 5 × 10 when the vacuum degree in photoelectric device
-3during Pa, carry out being warmed to 330 DEG C to 370 DEG C after taking out 2h in advance to photoelectric device, insulation 4h carries out degasification, is then down to room temperature.
It is dull and stereotyped that step of the present invention (2) passes into hydrogen cleaning negative electrode by great many of experiments screening to photoelectric device pipe, with the technique of each pole being carried out to electrion deburring, can effectively remove the impurity such as the burr of each pole, there is the phenomenons such as sparking when can prevent photoelectric device pipe from working, improve service behaviour, achieve good technique effect.
Step of the present invention (3) filters out the optimum process method steaming antimony process by great many of experiments, antimony layers thickness is moderate, and the photocathode for the later stage activates lays good basis, achieves good technique effect, can overcome the deficiencies in the prior art.
Step of the present invention (5) and step (7) draw to photoelectric device pipe the technique that potassium activates and draw caesiation by great many of experiments screening, can exciting light electric device efficiently, make the emissivities that the emitting surface of photocathode and dynode reaches best, the photoelectric conversion capacity of photocathode, the secondary emission performance of electrode achieve good technique effect, can overcome the deficiencies in the prior art.
Shock type crunch seal photoelectric device pipe, shell as photomultiplier is made up of nearly 20 ceramic rings and 20 alternate sealing-ins of becket, its anode-cathode distance is little, thus when making photocathode, the vapour of an alkali metal of its remnants runs into very large flow resistance and cannot be drawn out of clean, and due to earthenware inwall porous absorption alkali metal, thus cause interpolar by above-mentioned alkali metal severe contamination, under high pressure cause larger ohm electric leakage, cause Quality Down.The present invention is by techniques such as the preferred heating-up temperatures of great many of experiments, in step (8), the multiplication region in photoelectric device pipe is placed in small bake oven, keep heating-up temperature 200 DEG C ~ 250 DEG C, and the cathodic region in photoelectric device pipe is placed in large baking oven, keep heating-up temperature 150 DEG C ~ 200 DEG C, thus cause the temperature of multiplication region to form certain temperature difference higher than the temperature in cathodic region, and through the continual baking of 24h to 72h, can to greatest extent the unnecessary vapour of an alkali metal be trapped in pipe be extracted out outside pipe, thus effectively can reduce the dark current of photomultiplier, improve job stability, improve performance, overcome qualification rate in prior art low, high in cost of production shortcoming, achieve good technique effect.
Beneficial effect: the exhaust activation method of photoelectric device provided by the invention compared with prior art has the following advantages:
The exhaust activation method of photoelectric device provided by the invention, by great many of experiments screening electrion debarring process, steam antimony treatment process, draw the technique that potassium activates and draws caesiation, especially adopt different temperatures to carry out eliminating alkali metal technique to multiplication region and cathodic region, whole process operability is strong, can get rid of the unnecessary vapour of an alkali metal in photoelectric device to greatest extent, reduce the dark current of photomultiplier, improve photoelectric device Performance and quality; The photoelectric device quality prepared is high, and performance is excellent, good stability, practical.
Embodiment
Below in conjunction with specific embodiment, illustrate the present invention further, these embodiments should be understood only be not used in for illustration of the present invention and limit the scope of the invention, after having read the present invention, the amendment of those skilled in the art to the various equivalent form of value of the present invention has all fallen within the application's claims limited range.
Embodiment 1
An exhaust activation method for photoelectric device, it comprises the following steps:
(1) vacuum system of the blast pipe of photoelectric device with vacuum exhaust platform is connected, then opens vacuum exhaust platform, photoelectric device is bled, when the vacuum degree in photoelectric device reaches 5.5 × 10
-3during Pa, carry out being warmed to 330 DEG C to 370 DEG C after taking out 2h in advance to photoelectric device, insulation 4h carries out degasification, is then down to room temperature;
(2) then hydrogen cleaning negative electrode is passed into photoelectric device dull and stereotyped, the deburring of 1500V electrion is carried out to focusing electrode, dynode at different levels, final stage dynode, anode;
(3) then antimony power circuit is steamed in photoelectric device access and carry out the process of steaming antimony, steaming antimony electric current is 1.1A, steams 6 minutes antimony time;
(4) open high frequency furnace, carry out degasification in advance, until the vacuum degree in potassium pipe is not less than 1 × 10 with high frequency coil baking potassium pipe and caesium pipe
-4stop baking during Pa, then bake potassium steam and rush in the bead that is connected with blast pipe, excision potassium pipe;
(5) respectively the first dynode of the negative electrode of photoelectric device and photoelectric device is received on activating power, tungsten filament lamp sources is fixed on 40 ~ 50mm place, photoelectric device window front end, multiplication region temperature is made to control at 200 DEG C ~ 250 DEG C, cathodic region temperature controls at 210 DEG C ~ 220 DEG C, potassium steam in bead is rushed in photoelectric device, enters potassium and activate, repeatedly for several times until cathode plane becomes aubergine, extract bead, then dry the remaining potassium delustered in electric device;
(6) high frequency furnace is opened, with high frequency coil baking, to the degasification of caesium pipe, until the vacuum degree in caesium pipe is not less than 1 × 10
-4stop baking during Pa, bake caesium steam and rush in another bead of being connected with blast pipe;
(7) at the temperature of 220 DEG C to 250 DEG C, draw caesium steam in bead enters in photoelectric device, activates slowly, after the photoelectric current of photoelectric device pipe rises to maximum, extracts caesium pipe;
(8) the multiplication region position in photoelectric device is kept heating-up temperature 200 DEG C ~ 250 DEG C, and the cathodic region in photoelectric device is kept heating-up temperature 150 DEG C ~ 200 DEG C, toast 24h to 72h respectively, dry alkali metal remaining in the electric device pipe that delusters, last sealed-off photoelectric device pipe.
Embodiment 2
An exhaust activation method for photoelectric device, it comprises the following steps:
(1) vacuum system of the blast pipe of photoelectric device with vacuum exhaust platform is connected, then opens vacuum exhaust platform, photoelectric device is bled, when the vacuum degree in photoelectric device reaches 5 × 10
-3during Pa, carry out being warmed to 370 DEG C after taking out 4h in advance to photoelectric device, insulation 8h carries out degasification, is then down to room temperature;
(2) then hydrogen cleaning negative electrode is passed into photoelectric device dull and stereotyped, the deburring of 1400V electrion is carried out to focusing electrode, dynode at different levels, final stage dynode, anode;
(3) then antimony power circuit is steamed in photoelectric device access and carry out the process of steaming antimony, steaming antimony electric current is 1.15A, steams 8 minutes antimony time;
(4) open high frequency furnace, carry out degasification in advance, until the vacuum degree in potassium pipe is not less than 1 × 10 with high frequency coil baking potassium pipe and caesium pipe
-4stop baking during Pa, then bake potassium steam and rush in the bead that is connected with blast pipe, excision potassium pipe;
(5) respectively the first dynode of the negative electrode of photoelectric device and photoelectric device is received on activating power, tungsten filament lamp sources is fixed on 40 ~ 50mm place, photoelectric device window front end, multiplication region temperature is made to control at 200 DEG C ~ 250 DEG C, cathodic region temperature controls at 210 DEG C ~ 220 DEG C, potassium steam in bead is rushed in photoelectric device, enters potassium and activate, repeatedly for several times until cathode plane becomes aubergine, extract bead, then dry the remaining potassium delustered in electric device;
(6) high frequency furnace is opened, with high frequency coil baking, to the degasification of caesium pipe, until the vacuum degree in caesium pipe is not less than 1 × 10
-4stop baking during Pa, bake caesium steam and rush in another bead of being connected with blast pipe;
(7) at the temperature of 220 DEG C to 250 DEG C, draw caesium steam in bead enters in photoelectric device, activates slowly, after the photoelectric current of photoelectric device pipe rises to maximum, extracts caesium pipe;
(8) the multiplication region position in photoelectric device is kept heating-up temperature 200 DEG C ~ 250 DEG C, and the cathodic region in photoelectric device is kept heating-up temperature 150 DEG C ~ 200 DEG C, toast 24h to 72h respectively, dry alkali metal remaining in the electric device pipe that delusters, last sealed-off photoelectric device pipe.
The above is only the preferred embodiment of the present invention; it should be pointed out that for those skilled in the art, under the premise without departing from the principles of the invention; can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (4)
1. an exhaust activation method for photoelectric device, is characterized in that, it comprises the following steps:
(1) vacuum system of the blast pipe of photoelectric device with vacuum exhaust platform is connected, then opens vacuum exhaust platform, photoelectric device is bled, when the vacuum degree in photoelectric device reaches 5 × 10
-3pa to 5.5 × 10
-3during Pa, carry out being warmed to 300 DEG C to 400 DEG C after taking out 2h to 4h in advance to photoelectric device, insulation 4h to 8h carries out degasification, is then down to room temperature;
(2) then hydrogen cleaning negative electrode is passed into photoelectric device dull and stereotyped, the deburring of 1200V to 1500V electrion is carried out to focusing electrode, dynode at different levels, anode;
(3) then antimony power circuit is steamed in photoelectric device access and carry out the process of steaming antimony, steaming antimony electric current is 1A ~ 1.3A, steams 5 minutes to 10 minutes antimony time;
(4) open high frequency furnace, carry out degasification in advance, until the vacuum degree in potassium pipe is not less than 1 × 10 with high frequency coil baking potassium pipe and caesium pipe
-4stop baking during Pa, then bake potassium steam and rush in the bead that is connected with blast pipe, excision potassium pipe;
(5) respectively the first dynode of the negative electrode of photoelectric device and photoelectric device is received on activating power, tungsten filament lamp sources is fixed on 40 ~ 50mm place, photoelectric device window front end, multiplication region temperature is made to control at 200 DEG C ~ 250 DEG C, cathodic region temperature controls at 210 DEG C ~ 220 DEG C, potassium steam in bead is rushed in photoelectric device, enters potassium and activate, repeatedly for several times until cathode plane becomes aubergine, extract bead, then dry the remaining potassium delustered in electric device;
(6) high frequency furnace is opened, with high frequency coil baking, to the degasification of caesium pipe, until the vacuum degree in caesium pipe is not less than 1 × 10
-4stop baking during Pa, bake caesium steam and rush in another bead of being connected with blast pipe;
(7) at the temperature of 220 DEG C to 250 DEG C, draw caesium steam in bead enters in photoelectric device, activates slowly, after the photoelectric current of photoelectric device pipe rises to maximum, extracts caesium pipe;
(8) the multiplication region position in photoelectric device is kept heating-up temperature 200 DEG C ~ 250 DEG C, and the cathodic region in photoelectric device is kept heating-up temperature 150 DEG C ~ 200 DEG C, toast 24h to 72h respectively, dry alkali metal remaining in the electric device pipe that delusters, last sealed-off photoelectric device pipe.
2. the exhaust activation method of photoelectric device according to claim 1, is characterized in that, step (1) reaches 5 × 10 when the vacuum degree in photoelectric device
-3during Pa, carry out being warmed to 330 DEG C to 370 DEG C after taking out 2h in advance to photoelectric device, insulation 4h carries out degasification, is then down to room temperature.
3. the exhaust activation method of photoelectric device according to claim 1, is characterized in that, the voltage of the electrion deburring described in step (2) is 1500V.
4. the exhaust activation method of photoelectric device according to claim 1, is characterized in that, when step (3) steams antimony process, steaming antimony electric current is 1.1A ~ 1.15A, steams 6 minutes to 8 minutes antimony time.
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| CN202616182U (en) * | 2011-12-16 | 2012-12-19 | 北方夜视技术股份有限公司 | Device for monitoring manufacture of multi-alkali photocathode of image intensifier |
| CN202905652U (en) * | 2012-07-05 | 2013-04-24 | 北京滨松光子技术股份有限公司 | Exhaust table for photomultiplier tube |
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| JP4132305B2 (en) * | 1998-11-10 | 2008-08-13 | 浜松ホトニクス株式会社 | Photomultiplier tube and manufacturing method thereof |
| JP4562844B2 (en) * | 2000-02-23 | 2010-10-13 | 浜松ホトニクス株式会社 | Photocathode and electron tube |
| JP3599012B2 (en) * | 2001-10-01 | 2004-12-08 | トヨタ自動車株式会社 | Exhaust gas purification device for internal combustion engine |
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| CN202616182U (en) * | 2011-12-16 | 2012-12-19 | 北方夜视技术股份有限公司 | Device for monitoring manufacture of multi-alkali photocathode of image intensifier |
| CN202905652U (en) * | 2012-07-05 | 2013-04-24 | 北京滨松光子技术股份有限公司 | Exhaust table for photomultiplier tube |
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