CN103354230A - Electrostatic discharge protection TVS device of high maintenance voltage - Google Patents
Electrostatic discharge protection TVS device of high maintenance voltage Download PDFInfo
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- CN103354230A CN103354230A CN2013102933668A CN201310293366A CN103354230A CN 103354230 A CN103354230 A CN 103354230A CN 2013102933668 A CN2013102933668 A CN 2013102933668A CN 201310293366 A CN201310293366 A CN 201310293366A CN 103354230 A CN103354230 A CN 103354230A
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- injection region
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- electrostatic discharge
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- maintenance voltage
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Abstract
The invention discloses an electrostatic discharge protection TVS device of a high maintenance voltage. The device comprises a single component. The single component comprises a P substrate. A high voltage N trap, a P trap, a first N+ active injection area, a second N+ active injection area, a third N+ active injection area, a first P+ active injection area, a second P+ active injection area, an oxide layer and a polysilicon gate are comprised. The first N+ active injection area is led out through a metal line and is taken as an anode of the single component. The polysilicon gate is connected with the third N+ active injection area and the second P+ active injection area through the metal line, is led out and is taken as a cathode of the single component. The electrostatic discharge protection device of the high maintenance voltage possesses a good electrostatic discharge capacity and possesses the high maintenance voltage. When an integrated circuit works, effective protection can be achieved if an ESD event is generated. A bolt-lock problem is avoided.
Description
Technical field
The present invention relates to a kind of electrostatic discharge protective TVS device of high maintenance voltage, especially a kind of static protective unit device (TVS) device of high maintenance voltage belongs to integrated circuit electrostatic defending technical field.
Background technology
ESD(Electrostatic Discharge, static discharge) problem is to make us the difficult problem that perplexs in the integrated circuit fields always.The electrostatic defending of carrying out integrated circuit is of crucial importance to the reliability of an electronic system.Current electronic device tends to miniaturization, high density and multifunction day by day, particularly as fashional consumption electronics and portable product etc. to the stricter application of mainboard area requirements, be easy to be subject to the impact of static discharge.Static is at every moment ubiquitous, in the sixties, along with the appearance to the highstrung MOS device of static, electrostatic discharge problem also arises at the historic moment, to the seventies electrostatic discharge problem more and more come seriously, the 80-90 age is along with the density of integrated circuit is increasing, the thickness of its silicon dioxide film of one side more and more thinner (micron changes to nanometer), the ability to bear of static is more and more lower; On the other hand, produce and accumulate material such as the plastics of static, rubber etc. are a large amount of to be used, so that static ubiquity more and more, only the loss that causes because of static every year of U.S.'s electronics industry reaches hundred million dollars of hundreds ofs, therefore electrostatic breakdown has become the stealthy killer of electronics industry, is electronics industry ubiquitous " hard virus ", has caused people's extensive concern.
Along with the development of semiconductor integrated circuit, the various ESD protection questions relevant with integrated circuit also highlight.Except traditional MOS(Metal Oxide Semiconductor, metal-oxide semiconductor (MOS)) transistorized gate oxide, anti-ESD ability very a little less than, the ability of the anti-ESD of high tension apparatus that in novel high voltage integrated circuit technique, occurs also very a little less than.The operating voltage of high tension apparatus in integrated circuit is higher, and its current lead-through ability is strong, and it generally appears at the output port in the integrated circuit.So it generally will meet with more serious ESD problem.
Take the ESD protective device of controllable silicon as the basis, be widely used in because its current drain ability is strong in the ESD protection.But it is to stagnate by returning of voltage occurs in when work, and the passage of the low-resistance ESD electric current of releasing is provided.This cause it when work keep very point of voltage, be well below the operating voltage of high tension apparatus.If in high tension apparatus work esd event has occured, the ESD protective device will be started working, but its operating voltage is very low, even well below the operating voltage of high tension apparatus, after esd event, it can't be closed, thereby have a strong impact on the normal operation of high tension apparatus, even high tension apparatus is burnt.So-called bolt-lock problem that Here it is.Keep the high ESD protective device of voltage so need one badly for the ESD protection of high tension apparatus.
Summary of the invention
Purpose: in order to overcome the deficiencies in the prior art, the invention provides a kind of electrostatic discharge protective TVS device of high maintenance voltage, possessing suitable trigger voltage, on the basis of stronger electrostatic leakage ability, this device has the high voltage of keeping, when being used for electrostatic discharge protective, avoided producing fatal bolt-lock problem.
Technical scheme: for solving the problems of the technologies described above, the technical solution used in the present invention is:
A kind of electrostatic discharge protective TVS device of high maintenance voltage comprises unit component, and it is characterized in that: described unit component comprises the P substrate;
Be embedded with a high pressure N trap on the described P substrate; Be provided with a P trap on the described high pressure N trap; The P trap is provided with the active injection region of the 3rd N+ and the active injection region of the 2nd P+;
Described high pressure N trap is not established in the zone of P trap and is provided with the active injection region of a N+ and the active injection region of a P+, and the intersection of described high pressure N trap and P trap is embedded with the active injection region of the 2nd N+;
The active injection region of a described N+, the active injection region of a P+, the active injection region of the 2nd N+, the active injection region of the 3rd N+ are adjacent successively with the active injection region of the 2nd P+;
P substrate top between the active injection region of described the 2nd N+ and the active injection region of the 3rd N+ is provided with an oxide layer; Above described oxide layer, be provided with a polysilicon gate;
Anode as unit component is drawn by metal wire in the active injection region of a described N+, and described polysilicon gate links to each other with the active injection region of the 2nd P+ with the active injection region of the 3rd N+ by metal wire and draws negative electrode as unit component.
The electrostatic discharge protective TVS device of described high maintenance voltage is characterized in that: the active injection region of the described N+ spacing adjacent with the active injection region of a P+ is 0-0.5um.
The electrostatic discharge protective TVS device of described high maintenance voltage is characterized in that: the active injection region of the described P+ spacing adjacent with the active injection region of the 2nd N+ is 1-3um.
The electrostatic discharge protective TVS device of described high maintenance voltage is characterized in that: the active injection region of described the 2nd N+ spacing adjacent with the active injection region of the 3rd N+ is 0.6-1.0um.
The electrostatic discharge protective TVS device of described high maintenance voltage is characterized in that: the active injection region of described the 3rd N+ spacing adjacent with the active injection region of the 2nd P+ is 0-2um.
The electrostatic discharge protective TVS device of described high maintenance voltage is characterized in that: described P substrate concentration scope is 1 * 10
15-1 * 10
16Atom/cm
3
The electrostatic discharge protective TVS device of described high maintenance voltage is characterized in that: described P trap concentration range is 1 * 10
17-1 * 10
18Atom/cm
3
The electrostatic discharge protective TVS device of described high maintenance voltage is characterized in that: the concentration range of the active injection region of a described N+, the active injection region of the 2nd N+, the active injection region of the 3rd N+ is 1 * 10
19-1 * 10
20Atom/cm
3And/or; The concentration range of the active injection region of a described P+, the active injection region of the 2nd P+ is 1 * 10
19-1 * 10
20Atom/cm
3
A kind of electrostatic discharge protective TVS device of high maintenance voltage is characterized in that: comprise a plurality of described unit components, a plurality of unit components are connected successively; Each unit component has an anode terminal and a cathode terminal, and the anode terminal of a unit component is connected to the cathode terminal of another unit component by metal connecting line.
The electrostatic discharge protective TVS device of described a kind of high maintenance voltage is characterized in that: described unit component number is 2-8.
The equivalent electric circuit of described unit component is comprised of a current source I, two triode Q1-Q2 and two resistance R 1-R2; Wherein, the end of current source I is connected to the anode of described unit component, and the other end is connected to the emitter of triode Q2.The emitter of triode Q2 is connected to a section of current source I, and base stage is connected to the collector electrode of triode Q1, and collector electrode is connected to the base stage of triode Q1.The emitter of triode Q1 is connected to the negative electrode of unit component, and base stage is connected to the collector electrode of triode Q2, and collector electrode is connected to the base stage of triode Q2.One end of resistance R 2 is connected to the anode of unit component, and the other end is connected to the collector electrode of triode Q1.One end of resistance R 1 is connected to the negative electrode of unit component, and the other end is connected to the base stage of triode Q1.Triode Q1 is NPN type triode, and triode Q2 is the positive-negative-positive triode.
Described current source I refers to that device bumped between by the active injection region of a N+ and high pressure N trap in when work and forms when ionizing; Triode Q1 is comprised of the active injection region of the 2nd N+ (collector electrode), the active injection region of the 3rd N+ (emitter) and P trap (base stage); Triode Q2 is comprised of the active injection region of a P+ (emitter), high pressure N trap (base stage) and P trap (collector electrode), triode Q1 and triode Q2 consist of a SCR, and the ESD electric current is mainly released by the discharge path that described current source I and SCR form; Resistance R 1 be in the P trap from the equivalent resistance between the active injection region of two P+, the active injection region to the of the 3rd N+, resistance R 2 is from the equivalent resistance between the active injection region of two N+, the active injection region to the of a N+ in the high pressure N trap.
Operation principle of the present invention is: when the anode at whole device has enough large esd pulse voltage, because each unit component is identical, also can produce so corresponding esd pulse voltage on each unit component.When the esd pulse voltage on the unit component is enough high, the anti-partially PN junction generation avalanche breakdown that high pressure N trap and P trap consist of, produce avalanche current, this electric current makes the parasitic triode Q1 in the device open first work, along with the electric current of device inside further increases, current source I also can conducting, and this is so that parasitic triode Q2 also begins conducting.The SCR that is made of triode Q1 and triode Q2 so will open the ESD electric current of releasing a large amount of.
Beneficial effect: the electrostatic discharge protective TVS device of high maintenance voltage provided by the invention, can when effectively the protection integrated circuit is not damaged by ESD, avoid circuit generation bolt-lock problem.
Description of drawings
Fig. 1 is the schematic diagram of a plurality of unit component series connection of high maintenance voltage electrostatic discharge protection component;
Fig. 2 is the structural representation of unit component;
Fig. 3 is the equivalent circuit diagram of unit component;
Fig. 4 is the i-v curve characteristic of high maintenance voltage electrostatic discharge protection component.
Among the figure, P substrate 01, high pressure N trap 02, P trap 03, the active injection region 04 of a N+, the active injection region 05 of a P+, the active injection region 06 of the 2nd N+, the active injection region 07 of the 3rd N+, the active injection region 08 of the 2nd P+, oxide layer 09, polysilicon gate 10.
Embodiment
Below in conjunction with accompanying drawing the present invention is further described.
As shown in Figure 2, a kind of electrostatic discharge protective TVS device of high maintenance voltage comprises unit component,
Described unit component comprises P substrate 01; Be embedded with a high pressure N trap 02 on the described P substrate 01; Be provided with a P trap 03 on the described high pressure N trap 02; P trap 03 is provided with the active injection region 07 of the 3rd N+ and the active injection region 08 of the 2nd P+; Described high pressure N trap 02 is not established in the zone of P trap 03 and is provided with the active injection region 04 of a N+ and the active injection region 05 of a P+, and described high pressure N trap 02 is embedded with the active injection region 06 of the 2nd N+ with the intersection of P trap 03;
The active injection region 04 of a described N+, the active injection region 05 of a P+, the active injection region 06 of the 2nd N+, the active injection region 07 of the 3rd N+ are adjacent successively with the active injection region 08 of the 2nd P+;
Anode as unit component is drawn by metal wire in the active injection region 04 of a described N+, and described polysilicon gate 10 links to each other with the active injection region 08 of the 2nd P+ with the active injection region 07 of the 3rd N+ by metal wire and draws negative electrode as unit component.
The active injection region of the active injection region 04 of a described N+ and a P+ 05 adjacent spacing is 0-0.5um.
The active injection region of the active injection region 05 of a described P+ and the 2nd N+ 06 adjacent spacing is 1-3um.
The active injection region of the active injection region 06 of described the 2nd N+ and the 3rd N+ 07 adjacent spacing is 0.6-1.0um.
The active injection region of the active injection region 07 of described the 3rd N+ and the 2nd P+ 08 adjacent spacing is 0-2um.
Described P substrate 01 concentration range is 1 * 10
15-1 * 10
16Atom/cm
3
Described P trap 03 concentration range is 1 * 10
17-1 * 10
18Atom/cm
3
The concentration range of the active injection region 04 of a described N+, the active injection region 06 of the 2nd N+, the active injection region 07 of the 3rd N+ is 1 * 10
19-1 * 10
20Atom/cm
3The concentration range of the active injection region 05 of a described P+, the active injection region 08 of the 2nd P+ is 1 * 10
19-1 * 10
20Atom/cm
3
In the present embodiment, as shown in Figure 1, a kind of electrostatic discharge protective TVS device of high maintenance voltage comprises 6 described unit components, and 6 unit components are connected successively; Each unit component has an anode terminal and a cathode terminal, and the anode terminal of a unit component is connected to the cathode terminal of another unit component by metal connecting line.
The equivalent electric circuit of described unit component as shown in Figure 3, the equivalent electric circuit of unit component is comprised of a current source I, two triode Q1-Q2 and two resistance R 1-R2; Wherein, the end of current source I is connected to the anode of described unit component, and the other end is connected to the emitter of triode Q2.The emitter of triode Q2 is connected to a section of current source I, and base stage is connected to the collector electrode of triode Q1, and collector electrode is connected to the base stage of triode Q1.The emitter of triode Q1 is connected to the negative electrode of unit component, and base stage is connected to the collector electrode of triode Q2, and collector electrode is connected to the base stage of triode Q2.One end of resistance R 2 is connected to the anode of unit component, and the other end is connected to the collector electrode of triode Q1.One end of resistance R 1 is connected to the negative electrode of unit component, and the other end is connected to the base stage of triode Q1.Triode Q1 is NPN type triode, and triode Q2 is the positive-negative-positive triode.
When the anode at whole device has enough large esd pulse voltage, because each unit component is identical, also can produce so corresponding esd pulse voltage on each unit component.When the esd pulse voltage on the unit component is enough high, the anti-partially PN junction generation avalanche breakdown that high pressure N trap and P trap consist of, produce avalanche current, this electric current makes the parasitic triode Q1 in the device open first work, along with the electric current of device inside further increases, current source I also can conducting, and this is so that parasitic triode Q2 also begins conducting.The SCR that is made of triode Q1 and triode Q2 so will open the ESD electric current of releasing a large amount of.
Described current source I refers to that device was bumped between active injection region 04 and the high pressure N trap 02 by a N+ in when work and forms when ionizing; Triode Q1 is by the active injection region of the 2nd N+ 06(collector electrode), the active injection region of the 3rd N+ 07(emitter) and P trap 03(base stage) form; Triode Q2 is by the active injection region of P+ 05(emitter), high pressure N trap 02(base stage) and P trap 03(collector electrode) form, triode Q1 and triode Q2 consist of a SCR, and the ESD electric current is mainly released by the discharge path that described current source I and SCR form; Resistance R 1 be in the P trap 03 from the equivalent resistance the active injection region 08 of 07 to the 2nd P+, the active injection region of the 3rd N+, resistance R 2 is from the equivalent resistance the active injection region 06 of 04 to the 2nd N+, the active injection region of a N+ in the high pressure N trap 02.
Operation principle of the present invention is: when the anode at whole device has enough large esd pulse voltage, because each unit component is identical, also can produce so corresponding esd pulse voltage on each unit component.When the esd pulse voltage on the unit component is enough high, the anti-partially PN junction generation avalanche breakdown that high pressure N trap 02 and P trap 03 consist of, produce avalanche current, this electric current makes the parasitic triode Q1 in the device open first work, along with the electric current of device inside further increases, current source I also can conducting, and this is so that parasitic triode Q2 also begins conducting.The SCR that is made of triode Q1 and triode Q2 so will open the ESD electric current of releasing a large amount of.
Figure 4 shows that the TLP(Transmission-Line Pulse of the electrostatic discharge protective TVS device of a kind of high maintenance voltage in the present embodiment, transmission line pulse) test data figure.From figure, can find out significantly, the electrostatic discharge protection component of a kind of high maintenance voltage that the present invention proposes to keep voltage high especially, probably about 38V.Can when effectively the protection integrated circuit is not damaged by ESD, avoid circuit generation bolt-lock problem so use the electrostatic discharge protection component of this high maintenance voltage.
The above only is preferred implementation of the present invention; be noted that for those skilled in the art; under the prerequisite that does not break away from the principle of the invention, can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (10)
1. the electrostatic discharge protective TVS device of a high maintenance voltage comprises unit component, and it is characterized in that: described unit component comprises the P substrate;
Be embedded with a high pressure N trap on the described P substrate; Be provided with a P trap on the described high pressure N trap; The P trap is provided with the active injection region of the 3rd N+ and the active injection region of the 2nd P+;
Described high pressure N trap is not established in the zone of P trap and is provided with the active injection region of a N+ and the active injection region of a P+, and the intersection of described high pressure N trap and P trap is embedded with the active injection region of the 2nd N+;
The active injection region of a described N+, the active injection region of a P+, the active injection region of the 2nd N+, the active injection region of the 3rd N+ are adjacent successively with the active injection region of the 2nd P+;
P substrate top between the active injection region of described the 2nd N+ and the active injection region of the 3rd N+ is provided with an oxide layer; Above described oxide layer, be provided with a polysilicon gate;
Anode as unit component is drawn by metal wire in the active injection region of a described N+, and described polysilicon gate links to each other with the active injection region of the 2nd P+ with the active injection region of the 3rd N+ by metal wire and draws negative electrode as unit component.
2. the electrostatic discharge protective TVS device of high maintenance voltage according to claim 1, it is characterized in that: the active injection region of the described N+ spacing adjacent with the active injection region of a P+ is 0-0.5um.
3. the electrostatic discharge protective TVS device of high maintenance voltage according to claim 1, it is characterized in that: the active injection region of the described P+ spacing adjacent with the active injection region of the 2nd N+ is 1-3um.
4. the electrostatic discharge protective TVS device of high maintenance voltage according to claim 1, it is characterized in that: the active injection region of described the 2nd N+ spacing adjacent with the active injection region of the 3rd N+ is 0.6-1.0um.
5. the electrostatic discharge protective TVS device of high maintenance voltage according to claim 1, it is characterized in that: the active injection region of described the 3rd N+ spacing adjacent with the active injection region of the 2nd P+ is 0-2um.
6. the electrostatic discharge protective TVS device of high maintenance voltage according to claim 1, it is characterized in that: described P substrate concentration scope is 1 * 10
15-1 * 10
16Atom/cm
3
7. the electrostatic discharge protective TVS device of high maintenance voltage according to claim 1, it is characterized in that: described P trap concentration range is 1 * 10
17-1 * 10
18Atom/cm
3
8. the electrostatic discharge protective TVS device of high maintenance voltage according to claim 1, it is characterized in that: the concentration range of the active injection region of a described N+, the active injection region of the 2nd N+, the active injection region of the 3rd N+ is 1 * 10
19-1 * 10
20Atom/cm
3And/or; The concentration range of the active injection region of a described P+, the active injection region of the 2nd P+ is 1 * 10
19-1 * 10
20Atom/cm
3
9. the electrostatic discharge protective TVS device of a high maintenance voltage is characterized in that: comprise a plurality ofly such as each described unit component of claim 1-8, a plurality of unit components are connected successively; Each unit component has an anode terminal and a cathode terminal, and the anode terminal of a unit component is connected to the cathode terminal of another unit component by metal connecting line.
10. the electrostatic discharge protective TVS device of a kind of high maintenance voltage according to claim 9 is characterized in that: described unit component number is 2-8.
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| CN103354230B (en) | 2015-10-21 |
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