CN103354230B - The electrostatic discharge protective TVS device of high maintenance voltage - Google Patents
The electrostatic discharge protective TVS device of high maintenance voltage Download PDFInfo
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- CN103354230B CN103354230B CN201310293366.8A CN201310293366A CN103354230B CN 103354230 B CN103354230 B CN 103354230B CN 201310293366 A CN201310293366 A CN 201310293366A CN 103354230 B CN103354230 B CN 103354230B
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Abstract
The invention discloses a kind of electrostatic discharge protective TVS device of high maintenance voltage, comprise unit component, unit component comprises substrate P; Comprise substrate P, high pressure N trap, P trap, an active injection region of N+, the 2nd active injection region of N+, the 3rd active injection region of N+, an active injection region of P+, the 2nd active injection region of P+ and oxide layer and polysilicon gate; The anode as unit component is drawn by metal wire in the one active injection region of N+, and polysilicon gate is connected and draws the negative electrode as unit component with the 3rd active injection region of N+ with the 2nd active injection region of P+ by metal wire.The electrostatic discharge protection component of a kind of high maintenance of the present invention voltage not only has good electrostatic leakage ability, and has very high ME for maintenance, esd event occurs when integrated circuit operation and also can effectively protect, avoid bolt-lock problem.
Description
Technical field
The present invention relates to a kind of electrostatic discharge protective TVS device of high maintenance voltage, especially a kind of static protective unit device (TVS) device of high maintenance voltage, belongs to Integrated circuit electrostatic guard technology field.
Background technology
ESD(Electrostatic Discharge, static discharge) problem is the difficult problem making us in integrated circuit fields perplexing always.The reliability of electrostatic defending to an electronic system carrying out integrated circuit is of crucial importance.Current electronics tends to miniaturization, high density and multifunction day by day, particularly requires stricter application as fashional consumption electronics and portable product etc. to board area, is easy to the impact being subject to static discharge.Electrostatic is at every moment ubiquitous, in the sixties, along with the appearance to the highstrung MOS device of electrostatic, electrostatic discharge problem also arises at the historic moment, more and more come seriously to the electrostatic discharge problem seventies, the 80-90 age, along with the density of integrated circuit is increasing, the thickness more and more thinner (micron changes to nanometer) of its silicon dioxide film on the one hand, the ability to bear of electrostatic is more and more lower; On the other hand, produce and accumulate the material of electrostatic as plastics, rubber etc. use in a large number, make electrostatic more and more ubiquity, the loss that only Electronic Industries causes because of electrostatic every year reaches hundreds of hundred million dollars, therefore electrostatic breakdown has become the stealthy killer of electronics industry, is electronics industry ubiquitous " firmly virus ", has caused the extensive concern of people.
Along with the development of semiconductor integrated circuit, the various ESD protection question relevant to integrated circuit also highlights.Except traditional MOS(Metal Oxide Semiconductor, metal-oxide semiconductor (MOS)) gate oxide of transistor, against esd ability is very weak, and the ability of the high tension apparatus against esd occurred in novel high voltage integrated circuit technique is also very weak.High tension apparatus operating voltage is in integrated circuits higher, and its current capacity is strong, and it generally occurs output port in integrated circuits.So it generally will meet with more serious ESD problem.
ESD protective device based on controllable silicon, is widely used in because its current drain ability is strong in ESD protection.But it is operationally stagnant by there is returning of voltage, provides the passage of a low-resistance to ESD electric current of releasing.This causes its ME for maintenance operationally can unusual point, well below the operating voltage of high tension apparatus.If there occurs esd event when high tension apparatus work, ESD protective device will be started working, but its operating voltage is very low, even well below the operating voltage of high tension apparatus, after esd event, it cannot be closed, thus have a strong impact on the normal work of high tension apparatus, and high tension apparatus even can be made to burn.So-called bolt-lock problem that Here it is.So need the high ESD protective device of a ME for maintenance badly for the ESD protection of high tension apparatus.
Summary of the invention
Object: in order to overcome the deficiencies in the prior art, the invention provides a kind of electrostatic discharge protective TVS device of high maintenance voltage, possessing suitable trigger voltage, on the basis of stronger electrostatic leakage ability, this device has high ME for maintenance, when for electrostatic discharge protective, avoid and produce fatal bolt-lock problem.
Technical scheme: for solving the problems of the technologies described above, the technical solution used in the present invention is:
An electrostatic discharge protective TVS device for high maintenance voltage, comprises unit component, it is characterized in that: described unit component comprises substrate P;
Described substrate P is embedded with a high pressure N trap; Described high pressure N trap is provided with a P trap; P trap is provided with the 3rd active injection region of N+ and the 2nd active injection region of P+;
Described high pressure N trap is not established in the region of P trap and is provided with an active injection region of N+ and an active injection region of P+, and the intersection of described high pressure N trap and P trap is embedded with the 2nd active injection region of N+;
A described active injection region of N+, an active injection region of P+, the 2nd active injection region of N+, the 3rd active injection region of N+ are adjacent successively with the 2nd active injection region of P+;
An oxide layer is provided with above substrate P between the described 2nd active injection region of N+ and the 3rd active injection region of N+; A polysilicon gate is provided with at described oxide layer;
The anode as unit component is drawn by metal wire in a described active injection region of N+, and described polysilicon gate is connected and draws the negative electrode as unit component with the 3rd active injection region of N+ with the 2nd active injection region of P+ by metal wire.
The electrostatic discharge protective TVS device of described high maintenance voltage, is characterized in that: a described active injection region of the N+ spacing adjacent with an active injection region of P+ is 0-0.5um.
The electrostatic discharge protective TVS device of described high maintenance voltage, is characterized in that: a described active injection region of the P+ spacing adjacent with the 2nd active injection region of N+ is 1-3um.
The electrostatic discharge protective TVS device of described high maintenance voltage, is characterized in that: the described 2nd active injection region of the N+ spacing adjacent with the 3rd active injection region of N+ is 0.6-1.0um.
The electrostatic discharge protective TVS device of described high maintenance voltage, is characterized in that: the described 3rd active injection region of the N+ spacing adjacent with the 2nd active injection region of P+ is 0-2um.
The electrostatic discharge protective TVS device of described high maintenance voltage, is characterized in that: described substrate P concentration range is 1 × 10
15-1 × 10
16atom/cm
3.
The electrostatic discharge protective TVS device of described high maintenance voltage, is characterized in that: described P trap concentration range is 1 × 10
17-1 × 10
18atom/cm
3.
The electrostatic discharge protective TVS device of described high maintenance voltage, is characterized in that: the concentration range of a described active injection region of N+, the 2nd active injection region of N+, the 3rd active injection region of N+ is 1 × 10
19-1 × 10
20atom/cm
3; And/or; The concentration range of a described active injection region of P+, the 2nd active injection region of P+ is 1 × 10
19-1 × 10
20atom/cm
3.
An electrostatic discharge protective TVS device for high maintenance voltage, is characterized in that: comprise multiple described unit component, multiple unit component is connected successively; Each unit component has an anode terminal and a cathode terminal, and the anode terminal of a unit component is connected to the cathode terminal of another unit component by metal connecting line.
The electrostatic discharge protective TVS device of described a kind of high maintenance voltage, is characterized in that: described unit component number is 2-8.
The equivalent electric circuit of described unit component is made up of a current source I, two triode Q1-Q2 and two resistance R1-R2; Wherein, one end of current source I is connected to the anode of described unit component, and the other end is connected to the emitter of triode Q2.The emitter of triode Q2 is connected to one section of current source I, and base stage is connected to the collector electrode of triode Q1, and collector electrode is connected to the base stage of triode Q1.The emitter of triode Q1 is connected to the negative electrode of unit component, and base stage is connected to the collector electrode of triode Q2, and collector electrode is connected to the base stage of triode Q2.One end of resistance R2 is connected to the anode of unit component, and the other end is connected to the collector electrode of triode Q1.One end of resistance R1 is connected to the negative electrode of unit component, and the other end is connected to the base stage of triode Q1.Triode Q1 is NPN type triode, and triode Q2 is PNP type triode.
Described current source I refers to that device is operationally formed by when colliding and ionize between an active injection region of N+ and high pressure N trap; Triode Q1 is made up of the 2nd active injection region of N+ (collector electrode), the 3rd active injection region of N+ (emitter) and P trap (base stage); Triode Q2 is made up of an active injection region of P+ (emitter), high pressure N trap (base stage) and P trap (collector electrode), triode Q1 and triode Q2 forms the discharge path that SCR, an ESD electric current formed mainly through described current source I and SCR and releases; Resistance R1 be in P trap from the 3rd active injection region of N+ to the 2nd active injection region of P+ equivalent resistance, resistance R2 be in high pressure N trap from an active injection region of N+ to the 2nd active injection region of N+ equivalent resistance.
Operation principle of the present invention is: when there being enough large esd pulse voltage at the anode of whole device, because each unit component is identical, so each unit component also can produce corresponding esd pulse voltage.When the esd pulse voltage on unit component is enough high, the reverse biased pn junction generation avalanche breakdown that high pressure N trap and P trap are formed, produce avalanche current, this electric current makes the parasitic triode Q1 in device first open work, along with the electric current of device inside increases further, current source I also can conducting, and this makes parasitic triode Q2 also start conducting.The SCR be so made up of triode Q1 and triode Q2 will open the ESD electric current of releasing a large amount of.
Beneficial effect: the electrostatic discharge protective TVS device of high maintenance voltage provided by the invention, at effective protection integrated circuit not by while ESD damage, can avoid circuit generation bolt-lock problem.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of multiple unit component series connection of high maintenance voltage electrostatic discharge protective device;
Fig. 2 is the structural representation of unit component;
Fig. 3 is the equivalent circuit diagram of unit component;
Fig. 4 is the i-v curve characteristic of high maintenance voltage electrostatic discharge protective device.
In figure, substrate P 01, high pressure N trap 02, P trap 03, an active injection region 08 of P+, the active injection region of N+ the 07, the 2nd, the active injection region of N+ the 06, the 3rd, the active injection region of P+ the 05, the 2nd, the active injection region of N+ the 04, the one, oxide layer 09, polysilicon gate 10.
Embodiment
Below in conjunction with accompanying drawing, the present invention is further described.
As shown in Figure 2, a kind of electrostatic discharge protective TVS device of high maintenance voltage, comprises unit component,
Described unit component comprises substrate P 01; Described substrate P 01 is embedded with a high pressure N trap 02; Described high pressure N trap 02 is provided with a P trap 03; P trap 03 is provided with the 3rd active injection region of N+ 07 and the active injection region 08 of the 2nd P+; Described high pressure N trap 02 is not established in the region of P trap 03 and is provided with an active injection region of N+ 04 and the active injection region 05 of a P+, and described high pressure N trap 02 is embedded with the 2nd active injection region 06 of N+ with the intersection of P trap 03;
A described active injection region of N+, the active injection region of N+ the 06, the 3rd 07, the active injection region of P+ the 05, the 2nd, the active injection region of N+ the 04, the one is adjacent successively with the 2nd active injection region of P+ 08;
An oxide layer 09 is provided with above substrate P 01 between the described 2nd active injection region of N+ 06 and the active injection region 07 of the 3rd N+; A polysilicon gate 10 is provided with above described oxide layer 09;
The anode as unit component is drawn by metal wire in a described active injection region 04 of N+, and described polysilicon gate 10 is connected and draws the negative electrode as unit component with the 3rd active injection region of N+ 07 with the 2nd active injection region 08 of P+ by metal wire.
A described active injection region of N+ 04 spacing adjacent with an active injection region of P+ 05 is 0-0.5um.
A described active injection region of P+ 05 spacing adjacent with the 2nd active injection region of N+ 06 is 1-3um.
The described 2nd active injection region of N+ 06 spacing adjacent with the 3rd active injection region of N+ 07 is 0.6-1.0um.
The described 3rd active injection region of N+ 07 spacing adjacent with the 2nd active injection region of P+ 08 is 0-2um.
Described substrate P 01 concentration range is 1 × 10
15-1 × 10
16atom/cm
3.
Described P trap 03 concentration range is 1 × 10
17-1 × 10
18atom/cm
3.
The concentration range of a described active injection region 07 of N+, the active injection region of N+ the 06, the 3rd, the active injection region of N+ the 04, the 2nd is 1 × 10
19-1 × 10
20atom/cm
3; The concentration range of a described active injection region 08 of P+, the active injection region of P+ the 05, the 2nd is 1 × 10
19-1 × 10
20atom/cm
3.
In the present embodiment, as shown in Figure 1, a kind of electrostatic discharge protective TVS device of high maintenance voltage, comprises the unit component described in 6, and 6 unit components are connected successively; Each unit component has an anode terminal and a cathode terminal, and the anode terminal of a unit component is connected to the cathode terminal of another unit component by metal connecting line.
As shown in Figure 3, the equivalent electric circuit of unit component is made up of a current source I, two triode Q1-Q2 and two resistance R1-R2 the equivalent electric circuit of described unit component; Wherein, one end of current source I is connected to the anode of described unit component, and the other end is connected to the emitter of triode Q2.The emitter of triode Q2 is connected to one section of current source I, and base stage is connected to the collector electrode of triode Q1, and collector electrode is connected to the base stage of triode Q1.The emitter of triode Q1 is connected to the negative electrode of unit component, and base stage is connected to the collector electrode of triode Q2, and collector electrode is connected to the base stage of triode Q2.One end of resistance R2 is connected to the anode of unit component, and the other end is connected to the collector electrode of triode Q1.One end of resistance R1 is connected to the negative electrode of unit component, and the other end is connected to the base stage of triode Q1.Triode Q1 is NPN type triode, and triode Q2 is PNP type triode.
When there being enough large esd pulse voltage at the anode of whole device, because each unit component is identical, so each unit component also can produce corresponding esd pulse voltage.When the esd pulse voltage on unit component is enough high, the reverse biased pn junction generation avalanche breakdown that high pressure N trap and P trap are formed, produce avalanche current, this electric current makes the parasitic triode Q1 in device first open work, along with the electric current of device inside increases further, current source I also can conducting, and this makes parasitic triode Q2 also start conducting.The SCR be so made up of triode Q1 and triode Q2 will open the ESD electric current of releasing a large amount of.
Described current source I refers to that device is operationally formed by when colliding and ionize between an active injection region 04 of N+ and high pressure N trap 02; Triode Q1 is by the 2nd N+ active injection region 06(collector electrode), the 3rd N+ active injection region 07(emitter) and P trap 03(base stage) form; Triode Q2 is by a P+ active injection region 05(emitter), high pressure N trap 02(base stage) and P trap 03(collector electrode) form, triode Q1 and triode Q2 forms the discharge path that SCR, an ESD electric current formed mainly through described current source I and SCR and releases; Resistance R1 is from the equivalent resistance between the 3rd active injection region 08 of P+, the active injection region of N+ 07 to the two in P trap 03, and resistance R2 is from the equivalent resistance between an active injection region 06 of N+, the active injection region of N+ 04 to the two in high pressure N trap 02.
Operation principle of the present invention is: when there being enough large esd pulse voltage at the anode of whole device, because each unit component is identical, so each unit component also can produce corresponding esd pulse voltage.When the esd pulse voltage on unit component is enough high, the reverse biased pn junction generation avalanche breakdown that high pressure N trap 02 and P trap 03 are formed, produce avalanche current, this electric current makes the parasitic triode Q1 in device first open work, along with the electric current of device inside increases further, current source I also can conducting, and this makes parasitic triode Q2 also start conducting.The SCR be so made up of triode Q1 and triode Q2 will open the ESD electric current of releasing a large amount of.
Figure 4 shows that the TLP(Transmission-Line Pulse of the electrostatic discharge protective TVS device of a kind of high maintenance voltage in the present embodiment, transmission line pulse) test data figure.Can find out significantly from figure, the ME for maintenance of the electrostatic discharge protection component of a kind of high maintenance voltage that the present invention proposes is high especially, probably at about 38V.So use the electrostatic discharge protection component of this high maintenance voltage at effective protection integrated circuit not by while ESD damage, circuit generation bolt-lock problem can be avoided.
The above is only the preferred embodiment of the present invention; be noted that for those skilled in the art; under the premise without departing from the principles of the invention, can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (9)
1. an electrostatic discharge protective TVS device for high maintenance voltage, comprises unit component, it is characterized in that: described unit component comprises substrate P;
Described substrate P is embedded with a high pressure N trap; Described high pressure N trap is provided with a P trap; P trap is provided with the 3rd active injection region of N+ and the 2nd active injection region of P+;
Described high pressure N trap is not established in the region of P trap and is provided with an active injection region of N+ and an active injection region of P+, and the intersection of described high pressure N trap and P trap is embedded with the 2nd active injection region of N+;
A described active injection region of N+, an active injection region of P+, the 2nd active injection region of N+, the 3rd active injection region of N+ are adjacent successively with the 2nd active injection region of P+;
An oxide layer is provided with above substrate P between the described 2nd active injection region of N+ and the 3rd active injection region of N+; A polysilicon gate is provided with at described oxide layer;
The anode as unit component is drawn by metal wire in a described active injection region of N+, and described polysilicon gate is connected and draws the negative electrode as unit component with the 3rd active injection region of N+ with the 2nd active injection region of P+ by metal wire; A described active injection region of the N+ spacing adjacent with an active injection region of P+ is 0-0.5um.
2. the electrostatic discharge protective TVS device of high maintenance voltage according to claim 1, is characterized in that: a described active injection region of the P+ spacing adjacent with the 2nd active injection region of N+ is 1-3um.
3. the electrostatic discharge protective TVS device of high maintenance voltage according to claim 1, is characterized in that: the described 2nd active injection region of the N+ spacing adjacent with the 3rd active injection region of N+ is 0.6-1.0um.
4. the electrostatic discharge protective TVS device of high maintenance voltage according to claim 1, is characterized in that: the described 3rd active injection region of the N+ spacing adjacent with the 2nd active injection region of P+ is 0-2um.
5. the electrostatic discharge protective TVS device of high maintenance voltage according to claim 1, is characterized in that: described substrate P concentration range is 1 × 10
15-1 × 10
16atom/cm
3.
6. the electrostatic discharge protective TVS device of high maintenance voltage according to claim 1, is characterized in that: described P trap concentration range is 1 × 10
17-1 × 10
18atom/cm
3.
7. the electrostatic discharge protective TVS device of high maintenance voltage according to claim 1, is characterized in that: the concentration range of a described active injection region of N+, the 2nd active injection region of N+, the 3rd active injection region of N+ is 1 × 10
19-1 × 10
20atom/cm
3; And/or; The concentration range of a described active injection region of P+, the 2nd active injection region of P+ is 1 × 10
19-1 × 10
20atom/cm
3.
8. an electrostatic discharge protective TVS device for high maintenance voltage, is characterized in that: comprise multiple unit component as described in any one of claim 1-7, multiple unit component is connected successively; Each unit component has an anode terminal and a cathode terminal, and the anode terminal of a unit component is connected to the cathode terminal of another unit component by metal connecting line.
9. the electrostatic discharge protective TVS device of a kind of high maintenance voltage according to claim 8, is characterized in that: described unit component number is 2-8.
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| CN103928461B (en) * | 2014-04-30 | 2016-07-13 | 电子科技大学 | A kind of antinoise structure for chip ESD protection |
| CN108389857B (en) * | 2018-01-19 | 2020-10-30 | 湖南师范大学 | Polysilicon dummy gate electrostatic discharge device for improving holding voltage and manufacturing method thereof |
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Effective date of registration: 20210414 Address after: Room 295, block B, science and technology innovation center, 128 Shuanglian Road, Haining Economic Development Zone, Haining City, Jiaxing City, Zhejiang Province Patentee after: Heining Bernstein Biotechnology Co.,Ltd. Address before: 215300 11 / f-1109, No. 1699, Weicheng South Road, Yushan Town, Kunshan City, Suzhou City, Jiangsu Province Patentee before: JIANGSU ALLENMOORE MICROELECTRONICS Co.,Ltd. |
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