CN103347652A - Polishing pad - Google Patents
Polishing pad Download PDFInfo
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- CN103347652A CN103347652A CN2012800089921A CN201280008992A CN103347652A CN 103347652 A CN103347652 A CN 103347652A CN 2012800089921 A CN2012800089921 A CN 2012800089921A CN 201280008992 A CN201280008992 A CN 201280008992A CN 103347652 A CN103347652 A CN 103347652A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/22—Lapping pads for working plane surfaces characterised by a multi-layered structure
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- Mechanical Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
A polishing pad comprising at least a polishing layer and a cushion layer, wherein a groove is formed on a polishing surface of the polishing pad, at least one of angles formed by the polishing surface and a side surface of the groove which continues to the polishing surface is 105-150 DEG inclusive, and the cushion layer has a strain constant of 7.3*10<-6> to 4.4*10<-4> [mu]m/Pa inclusive. The use of the polishing pad can achieve a purpose of preventing the fluctuation in a polishing rate while keeping the polishing rate at a high level.
Description
Technical field
The present invention relates to grinding pad.More particularly, relate to the suitable grinding pad that uses in order in semiconductor, dielectric/metal complex and integrated circuit etc., to form tabular surface.
Background technology
Along with the semiconductor equipment densification, multilayer wired and follow its interlayer dielectric to form and connector, the technology of electrode formation etc. such as inlaying have increased importance degree.Thereupon, the importance degree of the flatening process of the metal film of these interlayer dielectrics and electrode increases, and the efficient technology as being used for this flatening process is called the CMP(cmp; Chemical Mechanical Polishing) grinding technique is popularized.
Generally speaking, the CMP device by keep as the semiconductor wafer of object being treated grinding head, be used for carrying out the milled processed of object being treated grinding pad, keep the grinding plate of above-mentioned grinding pad to constitute.And the milled processed of semiconductor wafer is to use slurries, by making semiconductor wafer and grinding pad relative motion, the outstanding part of the layer of semiconductor wafer surface being removed, made the processing of the layer planarization of wafer surface.
About the abrasive characteristic of CMP, have and guarantee etc. to be the such various characteristics that require of representative with the preventing of the guaranteeing of the local flatness of wafer, overall flatness, cut, high grinding rate.Therefore, for these realization, in the factor of bringing influence to abrasive characteristic, carried out various designs as the structure (pattern of groove and the cross sectional shape of groove etc.) of the groove of the grinding pad of one of bigger factor.
For example, the pattern of the groove that grinding layer surface is implemented is concentric circles, is essentially rectangular by the cross sectional shape that makes above-mentioned groove, has realized the raising (for example, with reference to patent documentation 1) of flatness and the grinding rate of wafer.
But, have groove cross sectional shape the bight or because before and after grinding or the polishing of carrying out in grinding etc. and the hair thorn that forms in the bight makes the situation of the surface generation cut of wafer.Record the technology (for example, with reference to patent documentation 2,3) that the inclined plane is set in the boundary portion of abradant surface and groove in order to eliminate this problem.
Patent documentation 1: the spy opens the 2002-144219 communique
Patent documentation 2: the spy opens the 2004-186392 communique
Patent documentation 3: the spy opens the 2010-45306 communique.
Summary of the invention
Here, present inventors find, by the boundary portion at abradant surface and groove the inclined plane are set, and not only cut reduces, and at specific angle of inclination, attraction plays a role between wafer and grinding pad, and grinding rate uprises.But, also find therefore and the change of grinding rate also becomes big.
The present invention is in view of the problem of such conventional art, and purpose provides a kind of grinding pad that also can suppress the change of grinding rate in abrasive characteristic especially in the higher grinding rate of maintenance.
Present inventors consider that the inhomogeneous of attraction brings change to grinding rate, in order to prevent this point, consider by make up the material with rigidity in bed course and can eliminate.
So the present invention adopts following such technical scheme in order to solve above-mentioned problem.That is, a kind of grinding pad is the grinding pad that has grinding layer and bed course at least, has groove at its abradant surface; Abradant surface and above-mentioned groove with the continuous side angulation of abradant surface be 105 degree above, below 150 degree, the strain constant of above-mentioned bed course is 7.3 * 10
-6μ m/Pa is above, 4.4 * 10
-4Below the μ m/Pa.
By the present invention, can provide a kind of grinding pad that can in the higher grinding rate of maintenance, suppress the change of grinding rate.
Description of drawings
Fig. 1 is the figure of an example that expression is located at the plan view shape of the groove on the grinding pad of the present invention.
Fig. 2 is the figure of an example that expression is located at the cross sectional shape of the groove on the grinding pad of the present invention.
Fig. 3 is the figure of an example that expression is located at the cross sectional shape of the groove on the grinding pad of the present invention.
Fig. 4 is the figure of an example that expression is located at the cross sectional shape of the groove on the grinding pad of the present invention.
Fig. 5 is the figure of an example that expression is located at the cross sectional shape of the groove on the grinding pad of the present invention.
Fig. 6 is the figure of an example that expression is located at the cross sectional shape of the groove on the grinding pad of the present invention.
The specific embodiment
The present invention has carried out wholwe-hearted research for the grinding pad that can suppress the change of grinding rate in the higher grinding rate of maintenance, the result finds out, in the grinding pad that has grinding layer and bed course at least, has groove at its abradant surface, abradant surface and above-mentioned groove with the continuous side angulation of abradant surface be that the strain constant of above-mentioned bed course is 7.3 * 10 below above 150 degree of 105 degree
-6μ m/Pa is above, 4.4 * 10
-4Below the μ m/Pa, can solve problem at one stroke thus.
In the present invention, grinding pad has grinding layer and bed course is important at least.Do not having under the situation of bed course, because the strain relief that the suction of grinding layer etc. can not be brought is changed astatically so grind grinding rate and the inner evenness of material.In the present invention, the strain constant of bed course is 7.3 * 10
-6μ m/Pa is above, 4.4 * 10
-4The scope that μ m/Pa is following.Strain constant by bed course is this scope, can improve under the original state of effect at the grinding rate that keeps being come by the troughed belt with inclination, significantly suppresses the grinding rate change.From the grinding rate change of being ground material and the viewpoint of local flatness, as the upper limit, more preferably 3.0 * 10
-4Below the μ m/Pa, more preferably 1.5 * 10
-4Below the μ m/Pa.In addition, as lower limit, more preferably 1.0 * 10
-5More than the μ m/Pa, more preferably 1.2 * 10
-5More than the μ m/Pa.Under the bigger situation of grinding rate change, ground the amount of grinding change of material, the result, the residual thickness change of being ground material brings harmful effect for the performance of semiconductor equipment.Thereby grinding rate changes preferably below 40.0nm/ minute, more preferably below 20.0nm/ minute.
In addition, strain constant of the present invention, use front end to be diameter 5mm pressure head, if the thickness when with dial ga(u)ge the pressure of 27kPa being applied for 60 seconds is (T1) μ m, if the thickness when then the pressure under the 177kPa being applied for 60 seconds is (T2) μ m, strain constant calculates according to following formula.
Strain constant (μ m/Pa)=(T1-T2)/(177-27)/1000.
As such bed course, can enumerate natural rubber, acrylonitrile-butadiene rubber, " neoprene (registration mark) " rubber, polybutadiene rubber, thermmohardening polyurethane rubber, thermoplastic polyurethane rubber, silicon rubber, " Ha イ ト レ Le (Hytrel; Registration mark) " elastomer, the “ ト ー レ ペ Off (TORAYPEF of non-foaming such as; Etc. registration mark ， East レ (strain) ペ Off processed) " polyolefin foam, ニ ッ タ ハ ー ス (strain) make nonwoven such as " suba400 ", but are not limited to these.
The strain constant of bed course can carry out the adjustment corresponding to its material.For example, be under the situation of foaming body at bed course, if make the degree of foaming become big then be in the tendency that limbers up, become big tendency so be in strain constant.In addition, be under the situation of non-foaming at bed course, by adjusting the crosslinked degree in the bed course, can carry out the adjusting of hardness.
The thickness of bed course is the scope of 0.1～2mm preferably.From the viewpoint of the comprehensive inner evenness of semiconductor substrate, preferably more than the 0.25mm, more preferably more than the 0.3mm.In addition, from the viewpoint of local flatness, preferably below the 2mm, more preferably below the 1mm.
The grinding layer surface of grinding pad of the present invention has groove.As the shape from the groove of grinding layer surface observation, can enumerate trellis, concentric circles, helical form, radial etc., but be not limited to these.Because groove can upgrade slurries when being the open system of extending in a circumferential direction more efficiently, so radial or trellis etc. most preferably.An example of the groove of expression trellis in Fig. 1.Be provided with trellis groove 2 at grinding pad 1.Spacing and width at groove are not particularly limited, and the shape of the partition that is marked off by the groove of trellis both can be that square also can be rectangle.
In addition, at least one side with the continuous side angulation of abradant surface (below the situation that is called " angle of inclination " is arranged) by abradant surface and above-mentioned groove be 105 degree above, below 150 degree, can when keeping higher grinding rate, suppress the change of grinding rate.From the retentivity of slurries and mobile viewpoint, as lower limit preferably more than 115 degree.In addition, as the upper limit preferably 140 the degree below, more preferably 135 the degree below, particularly preferably be 130 the degree below.By improving retentivity and the flowability of slurries, can actual stably supply with slurries to abradant surface, so can suppress the grinding rate change.Slurries flow owing to pass through centrifugal force, so if there is inclination the side that is in circumference at least in the facing sides that forms groove, then more effective.When a side's of groove angle of inclination is above-mentioned scope, the opposing party's angle of inclination is not particularly limited, but equally preferably 105 degree above, below 150 degree.At this moment, as lower limit, more preferably more than 115 degree.In addition, as the upper limit, more preferably below 140 degree, more preferably below 135 degree, particularly preferably be below 130 degree.Two sides' angle of inclination is roughly the same to be a form of preferred groove shape.But might not need roughly the same.The shape of bottom land is not particularly limited, and cross sectional shape also can be V word, U word, trapezoidal.
By accompanying drawing, the concrete shape of above such groove of the present invention is described.Fig. 2 to Fig. 6 is the phantom that groove 14 parts that have the grinding pad of grinding layer 10 at bed course 20 are amplified.Grinding layer 10 have abradant surface 11 and with the continuous side 12 of abradant surface 11.Angle [alpha] is above-mentioned angle of inclination, and its at least one side is more than 105 degree, below 150 degree.The shape of bottom land 13 (cross sectional shape) is the V word in Fig. 2, is the U word in Fig. 3, is trapezoidal in Fig. 4, but as described above, is not limited to these.In addition, in Fig. 2 to Fig. 4, the tilt angle alpha of both sides is roughly the same, is preferred form, but is not limited thereto.For example the tilt angle alpha difference of both sides in Fig. 5 is which kind of form can.In addition, as shown in Figure 6, be under the situation of curve on the border with the continuous side of abradant surface of abradant surface and groove, the angle of the crossing at the some place that will intersect under the situation that each face is prolonged point-blank is made as the inclination angle.
As the grinding layer that constitutes grinding pad, has the structure of separated foam owing in semiconductor, dielectric/metal complex and integrated circuit etc., form tabular surface, so be preferred.In addition, the hardness of grinding layer preferably 45～65 degree of ASKER D hardometer.Under the situation of ASKER D hardness less than 45 degree, the flatness of being ground material descends, and in addition, under than the big situation of 65 degree, though flatness is good, the uniformity (uniformity) of being ground material has the tendency of decline.
Though be not particularly limited, but as the material that forms such tectosome, can enumerate polyethylene, polypropylene, polyester, polyurethane, polyureas, polyamide, polyvinyl chloride, polyacetals, Merlon, polymethyl methacrylate, polytetrafluoroethylene (PTFE), epoxy resin, ABS resin, AS resin, phenolic resins, melmac, " neoprene (registration mark) " rubber, butadiene rubber, butadiene-styrene rubber, EP rubbers, silicon rubber, fluorubber and be the resin etc. of principal component with them.Also they can be used two or more.In such resin, can more preferably be the raw material of principal component with polyurethane than being easier to control on this point at the separated foam diameter also.
So-called polyurethane is polyaddition reaction or the synthetic macromolecule of polymerisation by PIC.The compound that uses as the symmetry of PIC is active hydrogen-contg compound, namely contains plural poly-hydroxyl or amino compound.As PIC, can enumerate toluene di-isocyanate(TDI), methyl diphenylene diisocyanate, naphthalene diisocyanate, hexamethylene diisocyanate, IPDI etc., but be not limited thereto.Also they can be used two or more.
As containing poly hydroxyl compound, polyalcohol is representational, can enumerate PPG, polytetramethylene ether diol, epoxy resin modification polyalcohol, PEPA, acrylic polyol, polybutadiene polyol, polysiloxane polyhydric alcohol etc.Also they can be used two or more.Preferably decide PIC and polyalcohol, reach catalyst, blowing agent, the combination of foam stabiliser or optimal amount according to hardness, bubble diameter and expansion ratio.
Formation method as their separated foams in the polyurethane, generally be the chemical blowing process that the various blowing agents when making by polyurethane carry out to the fusion in the resin, but also can preferably use in the method that makes resin expanded after-hardening by mechanical agitation.
The mean air bubble diameter of separated foam is according to the viewpoint that reduces cut, preferably more than the 30 μ m.On the other hand, from the viewpoint of the concavo-convex flatness of the part of being ground material, preferably below the 150 μ m, more preferably below the 140 μ m, more preferably below the 130 μ m.In addition, mean air bubble diameter can by with the super degree of depth microscope of sample cross section Yong キ ー エ Application ス VK-8500 processed with round shape bubble in the 400 times of bubbles that will in a visual field, observe when observing of multiplying power, except the bubble that is observed to damaged round shape in end, the visual field with image processing apparatus according to area of section measure diameter of equivalent circle, calculating number mean value is obtained.
As an embodiment of grinding pad of the present invention preferably contain vinyl compound condensate and polyurethane, have the pad of separated foam.Though only can improve toughness and hardness by the condensate that is formed by vinyl compound, be difficult to obtain have the grinding pad of the homogeneous of separated foam, if polyurethane uprises hardness then becomes fragile in addition.Contain the higher grinding pad of separated foam, toughness and hardness by vinyl compound being infiltrated up in the polyurethane, can making.
Vinyl compound is the compound with carbon-to-carbon dual combination of polymerism.Particularly, can enumerate methacrylate, methyl methacrylate, ethyl acrylate, EMA, the n-butyl acrylate, the n-butyl methacrylate, 2-ethylhexyl methacrylate, isodecyl methacrylate, the n-lauryl methacrylate, the 2-hydroxyethyl methacrylate, the 2-hydroxy propyl methacrylate, 2-methacrylic acid hydroxy butyl ester, dimethylaminoethyl methacrylate, diethyl aminoethyl methacrylate, GMA, ethylene glycol dimethacrylate, acrylic acid, methacrylic acid, fumaric acid, dimethyl fumarate, DEF, the fumaric acid dipropyl, maleic acid, dimethyl maleate, diethyl maleate, dipropyl maleate, phenyl maleimide, the cyclohexyl maleimide, the isopropyl maleimide, acrylonitrile, acrylamide, vinyl chloride, vinylidene chloride, styrene, AMS, divinylbenzene, ethylene glycol dimethacrylate, diethylene glycol dimethylacrylate etc.Also they can be used two or more.
In above-mentioned vinyl compound, CH preferably
2=CR
1COOR
2(R
1: methyl or ethyl, R
2: methyl, ethyl, propyl group or butyl).Wherein, methyl methacrylate, EMA, n-butyl methacrylate, isobutyl methacrylate are easier in the formation to the separated foam of polyurethane, the infiltration of monomer is good, the polymerization sclerosis is easier to, the hardness of the foaming tectosome of the condensate that contains vinyl compound of polymerization sclerosis and polyurethane is higher and good these aspects of planarization characteristics are preferred.
As the preferred polymerization initiator that uses for the condensate that obtains these vinyl compounds, can enumerate radical initiators such as azodiisobutyronitrile, azo two (2,4-methyl pentane nitrile), azo dicyclohexyl formonitrile HCNs, benzoyl peroxide, lauroyl peroxide, isopropyl peroxy dicarbonate.Also they can be used two or more.In addition, also can use the combination of polymerization initiator, for example peroxide and the amine of redox class.
As the infiltration method in the polyurethane of vinyl compound, can enumerate the method for dipping polyurethane in being incorporated with the container of vinyl compound.In addition, at this moment, to accelerate the purpose of infiltration speed, also preferably implement processing such as heating, pressurization, decompression, stirring, vibration, ultrasonic vibration.
The infiltration amount in the polyurethane of vinyl compound should determine according to the characteristic of the grinding pad of the kind of the vinyl compound that uses and polyurethane, manufacturing, though cannot treat different things as the same, for example preferably the condensate that is obtained by vinyl compound in the foaming tectosome of polymerization sclerosis and the ratio that contains of polyurethane are weight ratios 30/70～80/20.If the polymeric ratio that contains that is obtained by vinyl compound is weight ratio more than 30/70, then can make the hardness of grinding pad enough high.In addition, be below 80/20 if contain ratio, then can make the elasticity of grinding layer enough high.
In addition, the containing ratio of the condensate that obtains of the vinyl compound from polymerization sclerosis in the polyurethane and polyurethane can be by thermal decomposition gas-chromatography/mass analysis method measurement.As the device that can use in the method, can enumerate double click type heat cracker " PY-2010D " (corporate system) as thermal decomposer, as gas-chromatography/quality analysis apparatus, can enumerate " TRIO-1 " (VG corporate system).
In the present invention, from the viewpoint of the concavo-convex flatness of the part of semiconductor substrate, preferably do not separate and contain the phase of the polymeric and polyurethane that obtains from vinyl compound.If performance quantitatively, be that the infrared spectrum that the infrared microscopy light-dividing device of 50 μ m is observed has from the polymeric INFRARED ABSORPTION spike of vinyl compound polymerization and the INFRARED ABSORPTION spike of polyurethane with grinding pad with the size of spot then, the infrared spectrum at various positions is roughly the same.As infrared microscopy light-dividing device used herein, can enumerate the IR μ s of SPECTRA-TEC corporate system.
Grinding pad is purpose with the characteristic improvement, also can contain various additives such as grinding agent, charged preventor, lubricant, stabilizing agent, dyestuff.
In the present invention, the density of grinding layer is from reducing the viewpoint of the bad and overall jump of local flatness, preferably 0.3g/cm
3More than, 0.6g/cm more preferably
3More than, 0.65g/cm more preferably
3More than.On the other hand, from reducing the viewpoint of cut, preferably 1.1g/cm
3Below, 0.9g/cm more preferably
3Below, 0.85g/cm more preferably
3Below.In addition, the density of grinding layer of the present invention is to use Harvard's type densimeter (JIS R-3503 benchmark), is the value of Medium Measurement with water.
In the present invention, as the polished material that ground, for example can enumerate the insulating barrier that forms at semiconductor wafer or the surface of metal wiring.As insulating barrier, can enumerate lower floor's dielectric film of interlayer dielectric, metal wiring of metal wiring or the shallow trench isolation that in element separates, uses from.As metal wiring, can enumerate aluminium, tungsten, copper and their alloy etc., textural, have inlay, dual damascene, connector etc.Under with the situation of copper as metal wiring, barrier metals such as silicon nitride are also for grinding object.In the dielectric film, silica is main flow at present, but also can use insulating film with low dielectric constant.Beyond semiconductor wafer, also can be used in magnetic head, hard disk, sapphire, SiC, MEMS(microelectromechanical systems; Micro Electro Mechanical Systems) etc. grinding.
Ginding process of the present invention is in order to form tabular surface at glass, semiconductor, dielectric/metal complex and integrated circuit etc. and suitably to use.
Embodiment
Below, further specify details of the present invention by embodiment.But, not by present embodiment limited interpretation the present invention.In addition, measurement is carried out as follows.
＜bubble diameter is measured 〉
Mean air bubble diameter is being measured diameter of equivalent circle with image processing apparatus according to area of section for round shape bubble in the bubbles that the super degree of depth microscope of sample cross section Yong キ ー エ Application ス VK-8500 processed will be observed during with 400 times of observations of multiplying power, except the bubble that is observed to damaged round shape in end, the visual field in a visual field, with several mean values of calculating as mean air bubble diameter.
＜hardness measurement 〉
Carry out according to JIS K6253-1997.Cut out 2cm * 2cm(thickness with the polyurethane resin that will produce: big or small person arbitrarily) was left standstill 16 hours in the environment of 23 ℃ ± 2 ℃ of temperature, humidity 50% ± 5% as the hardness measurement test portion.When measuring, test portion is superimposed, become more than the thickness 6mm.Use hardometer (macromolecule gauge corporate system, ASKER D type hardness tester meter) to measure hardness.
＜little rubber (microrubber) A hardness measurement 〉
Be the hardness measurement test portion with the big or small person who bed course is cut out 3cm * 3cm, in the environment of 23 ℃ ± 2 ℃ of temperature, humidity 50% ± 5%, left standstill 16 hours.Use the little durometer MD-1 of macromolecule gauge (strain) system, in 1 test portion, measure 3 different points, with the mean value that calculates as little rubber A hardness.Measure.
＜angle of bank measurement 〉
The pad that will be formed with groove on the grinding layer surface is configured to, making the razor sword is vertical with respect to the groove direction, cut into slices in the groove depth direction, with the super degree of depth microscopic examination of the cross section Yong キ ー エ Application ス VK-8500 processed of groove, measure abradant surface and above-mentioned groove with the continuous side angulation of abradant surface.The groove that the following position of measuring distance is nearest, as the angle of inclination, the center of described position span pad is 1/3,2/3 position of radius with this average of 2.
＜strain constant calculates 〉
Use front end to be the pressure head of diameter 5mm, if the thickness when with dial ga(u)ge the pressure of 27kPa being applied for 60 seconds is (T1) μ m, if the thickness when then the pressure under the 177kPa being applied for 60 seconds is (T2) μ m, strain constant calculates according to following formula.
Strain constant (μ m/Pa)=(T1-T2)/(177-27)/1000.
＜average grinding rate 〉
Use the Mirra 3400 of ア プ ラ イ De マ テ リ ア Le ズ (strain), under the grinding condition of regulation carry out end point determination and on one side grind on one side.Abrasive characteristic is got rid of the most peripheral 1mm of 8 inches wafers, measures in diametric(al).To be radius 90mm apart from the center measuring 37 points according to 5mm in the interior face, measure 18 points according to 1mm in will being face more than the radius 91mm apart from the center, calculate average grinding rate (nm/ minute).
＜grinding rate the rate of change is calculated 〉
Wafer is ground 500, measure the average grinding rate of each wafer after, calculate according to following formula.
Grinding rate change (nm/ minute)=(the average grinding rate of maximum wafer)-(the average grinding rate of minimum wafer).
Polypropylene glycol 30 weight portions, methyl diphenylene diisocyanate 40 weight portions, water 0.5 weight portion, triethylamine 0.3 weight portion, silicon foam stabilizing agent 1.7 weight portions and tin octoate 0.09 weight portion are mixed with the RIM forming machine, spue and carry out press molding in the metal pattern, produce the polyurathamc sheet of separated foam.
Above-mentioned polyurathamc sheet was flooded 60 minutes in the methyl methacrylate that has added azodiisobutyronitrile 0.2 weight portion.Then, by above-mentioned polyurathamc sheet being impregnated into by polyvinyl alcohol " the CP " (degree of polymerization: about 500, Na カ ラ イ テ ス Network (strain) system) 15 weight portions, ethanol (reagent superfine, sheet mountain chemistry (strain) system) dry afterwards in the solution that 35 weight portions, water 50 weight portions constitute, above-mentioned polyurathamc sheet top layer is covered with polyvinyl alcohol.
Above-mentioned polyurathamc sheet is clamped between two glass sheets via vinyl chloride packing ring processed, carried out the polymerization sclerosis in 3 hours by heating down 65 ℃ of heating 6 hours down, at 120 ℃.After somatotype between glass plate and washing, under 50 ℃, carry out vacuum drying.Be thickness 2.00mm with the hard foamed slice processing that obtains like this, produce grinding layer by carrying out the two sides grinding again.Methyl methacrylate containing ratio in the grinding layer is 66 weight %.In addition, the D hardness of grinding layer is 54 degree, and density is 0.81g/cm
3, the mean air bubble diameter of separated foam is 45 μ m.
On the grinding layer that obtains by said method, using roll coater as bed course is 0.15 * 10 via the stacked strain constant of Mitsui Chemicals polyurethane (strain) MA-6203 adhesive linkage processed
-4The thermoplastic polyurethane of Japanese マ タ イ (strain) the system little rubber A of μ m/Pa(hardness 89 degree) (cushion thickness: 0.3mm), more overleaf as back side band and applying ponding chemical industry (strain) two-sided tape 5604TDM.This duplexer is punched to the circle of the diameter of 508mm, forms the groove of separation 15mm, angle of inclination 123 degree, groove depth 1.5mm on the grinding layer surface with the XY trellis, make grinding pad.
To paste by the grinding pad that said method obtains on the platform of grinder (ア プ ラ イ De マ テ リ ア Le ズ system " MIRRA3400 ").8 inches wafers of oxide-film are made back-up ring pressure=41kPa(6psi), interior pipe pressure=28kPa(4psi), diaphragm pressure=28kPa(4psi), platen rotating speed=76rpm, grinding head rotating speed=75rpm, (キ ャ ボ ッ ト corporate system SS-25) flows through with 150mL/ minute flow with pure water 1:1vol% dilution with slurries, with Saesol sander processed with load 17.6N(4lbf), milling time 1 minute, begin to carry out original place polishing in 30 seconds from grinding, grind out 500.The average grinding rate of the 500th oxide-film is 216.6nm/ minute.Grinding rate change in 500 was good result for 10.5nm/ minute.
Except the angle of inclination with the groove on grinding layer surface changes to 110 degree, grind similarly to Example 1.Average grinding rate is 185.0nm/ minute, and the grinding rate change was good result for 25.4nm/ minute.
Embodiment 3
Except the angle of inclination with the groove on grinding layer surface changes to 140 degree, grind similarly to Example 1.Average grinding rate is 227.3nm/ minute, and the grinding rate change was good result for 23.8nm/ minute.
Embodiment 4
Be 2.6 * 10 except bed course being changed to strain constant
-4The little rubber A of μ m/Pa(hardness 65 degree) polyolefin foam (East レ (strain) ペ Off processed, 3 times of expansion ratios, cushion thickness: 1.0mm) in addition, grind similarly to Example 1.Average grinding rate is 193.0nm/ minute, and the grinding rate change was good result for 31.0nm/ minute.
Embodiment 5
Except the groove with the grinding layer surface equally spaced forms 20 with radial, grind similarly to Example 1.Average grinding rate is 191.4nm/ minute, and the grinding rate change was good result for 24.3nm/ minute.
Embodiment 6
Except the separation with the grinding layer surface change to 11.5mm, with the angle of inclination change to 135 the degree, grind similarly to Example 1.Average grinding rate is 225.0nm/ minute, and the grinding rate change was good result for 12.6nm/ minute.
Embodiment 7
Except the angle of inclination with the groove on grinding layer surface changes to 135 degree, grind similarly to Example 1.Average grinding rate is 223.2nm/ minute, and the grinding rate change was good result for 18.7nm/ minute.
Embodiment 8
Be 3.8 * 10 except bed course being changed to strain constant
-4The little rubber A of μ m/Pa(hardness 57 degree) polyolefin foam (East レ (strain) ペ Off processed, 4 times of expansion ratios, cushion thickness: 1.0mm) in addition, grind similarly to Example 1.Average grinding rate is 192.1nm/ minute, and the grinding rate change was good result for 36.4nm/ minute.
Embodiment 9
Except about bed course the angle of inclination of the groove on grinding layer surface being changed to 135 degree, it is 2.6 * 10 that bed course is changed to strain constant
-4The little rubber A of μ m/Pa(hardness 65 degree) polyolefin foam (East レ (strain) ペ Off processed, 3 times of expansion ratios, cushion thickness: 1.0mm) in addition, grind similarly to Example 1.Average grinding rate is 201.3nm/ minute, and the grinding rate change was good result for 33.1nm/ minute.
Except the angle of inclination with the groove on grinding layer surface changes to 135 degree, it is 3.8 * 10 that bed course is changed to strain constant
-4The little rubber A of μ m/Pa(hardness 57 degree) polyolefin foam (East レ (strain) ペ Off processed, 4 times of expansion ratios, cushion thickness: 1.0mm) in addition, grind similarly to Example 1.Average grinding rate is 208.4nm/ minute, and the grinding rate change was good result for 38.2nm/ minute.
Two angles of inclination facing mutually except the groove that will clip the grinding layer surface change to 135 degree and 130 spend, and grind similarly to Example 1.Average grinding rate is 220.9nm/ minute, and the grinding rate change was good result for 19.0nm/ minute.
On the grinding layer back side via the fit polyester film of 188 μ m of bonding agent, at the polyester film face bed course of fitting.Except the angle of inclination with the grinding layer surface changes to 135 degree, grind similarly to Example 1.Average grinding rate is 233.3nm/ minute, and the grinding rate change was good result for 21.8nm/ minute.
Comparative example 1
Except the angle of inclination with the groove on grinding layer surface changes to 90 degree, grind similarly to Example 1.Average grinding rate is 182.1nm/ minute, and the grinding rate change is 107.7nm/ minute, and the grinding rate change is bigger.
Comparative example 2
Be the little rubber A of 6.5 * 10-4 μ m/Pa(hardness 51 degree except bed course being changed to strain constant) ニ ッ タ ハ ー ス (strain) suba400(cushion thickness processed: 1.25mm), with the angle of inclination of the groove on grinding layer surface change to 135 spend, grind similarly to Example 1.Average grinding rate is 234.3nm/ minute, and the grinding rate change is 184.7nm/ minute, and the grinding rate change is bigger.
Comparative example 3
Be 5.2 * 10 except bed course being changed to strain constant
-4The little rubber A of μ m/Pa(hardness 59 degree) Japanese clockwork spring (strain) ニ ッ processed パ ロ Application (NIPPARON) EXT(cushion thickness: 0.8mm), with the angle of inclination on grinding layer surface change to 135 spend beyond, grind similarly to Example 1.Average grinding rate is 221.8nm/ minute, and the grinding rate change is 165.5nm/ minute, and the grinding rate change is bigger.
Comparative example 4
Except the angle of inclination with the groove on grinding layer surface changes to 155 degree, grind similarly to Example 1.Average grinding rate is 215.5nm/ minute, and the grinding rate change is 63.2nm/ minute, and the grinding rate change is bigger.
Comparative example 5
Be the little rubber A of 6.5 * 10-4 μ m/Pa(hardness 51 degree except changing to as the bed course strain constant) ニ ッ タ ハ ー ス (strain) suba400(cushion thickness processed: 1.25mm), grind similarly to Example 1.Average grinding rate is 226.1nm/ minute, and the grinding rate change is 173.0nm/ minute, and the grinding rate change is bigger.
With the results are summarized in the table 1 of each embodiment and comparative example.
［ table 1 ］
Description of reference numerals
1 grinding pad
2 trellis grooves
10 grinding layers
11 abradant surfaces
12 sides
13 bottom lands
14 grooves
20 bed courses.
Claims (4)
1. a grinding pad has grinding layer and bed course at least, it is characterized in that,
Has groove at its abradant surface; At least one side with the continuous side angulation of abradant surface of abradant surface and above-mentioned groove be 105 degree above, below 150 degree, the strain constant of above-mentioned bed course is 7.3 * 10
-6μ m/Pa is above, 4.4 * 10
-4Below the μ m/Pa.
2. grinding pad as claimed in claim 1 is characterized in that,
The strain constant of bed course is 3.0 * 10
-4Below the μ m/Pa.
3. grinding pad as claimed in claim 1 is characterized in that,
The strain constant of bed course is 1.5 * 10
-4Below the μ m/Pa.
4. as each described grinding pad in the claim 1～3, it is characterized in that,
The pattern of the groove of abradant surface is trellis.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011-029393 | 2011-02-15 | ||
| JP2011029393 | 2011-02-15 | ||
| PCT/JP2012/052843 WO2012111502A1 (en) | 2011-02-15 | 2012-02-08 | Polishing pad |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103347652A true CN103347652A (en) | 2013-10-09 |
Family
ID=46672427
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012800089921A Pending CN103347652A (en) | 2011-02-15 | 2012-02-08 | Polishing pad |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US20140170943A1 (en) |
| EP (1) | EP2676771A1 (en) |
| JP (1) | JPWO2012111502A1 (en) |
| KR (1) | KR20140034128A (en) |
| CN (1) | CN103347652A (en) |
| SG (1) | SG192774A1 (en) |
| TW (1) | TW201242714A (en) |
| WO (1) | WO2012111502A1 (en) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103648717A (en) * | 2011-07-15 | 2014-03-19 | 东丽株式会社 | Polishing pad |
| CN103782372A (en) * | 2011-09-15 | 2014-05-07 | 东丽株式会社 | Polishing pad |
| JP5620465B2 (en) * | 2012-12-28 | 2014-11-05 | 東洋ゴム工業株式会社 | Circular polishing pad |
| KR101598556B1 (en) * | 2014-07-15 | 2016-03-14 | 경북대학교 산학협력단 | Polishing pad and polishing apparatus having the same |
| TWI549781B (en) * | 2015-08-07 | 2016-09-21 | 智勝科技股份有限公司 | Polishing pad, polishing system and polishing method |
| TWI595968B (en) * | 2016-08-11 | 2017-08-21 | 宋建宏 | Polishing pad and method for manufacturing the same |
| JP6434174B2 (en) * | 2018-01-29 | 2018-12-05 | 富士紡ホールディングス株式会社 | Polishing pad and manufacturing method thereof |
| KR102059647B1 (en) | 2018-06-21 | 2019-12-26 | 에스케이씨 주식회사 | Polishing pad with improved fluidity of slurry and manufacturing method thereof |
| JP7105334B2 (en) * | 2020-03-17 | 2022-07-22 | エスケーシー ソルミックス カンパニー，リミテッド | Polishing pad and method for manufacturing semiconductor device using the same |
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| JP2001001255A (en) * | 1999-04-21 | 2001-01-09 | Seiko Epson Corp | Polishing cloth, polishing device and manufacture of semiconductor device |
| US6749714B1 (en) * | 1999-03-30 | 2004-06-15 | Nikon Corporation | Polishing body, polisher, polishing method, and method for producing semiconductor device |
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| JP2000286218A (en) * | 1999-03-30 | 2000-10-13 | Nikon Corp | Polishing member, polishing equipment and polishing method |
| JP4855571B2 (en) | 2000-08-31 | 2012-01-18 | ニッタ・ハース株式会社 | Polishing pad and method of polishing a workpiece using the polishing pad |
| JP3612708B2 (en) * | 2001-11-29 | 2005-01-19 | 信越半導体株式会社 | Grooved polishing cloth, workpiece polishing method and polishing apparatus |
| JP2004186392A (en) | 2002-12-03 | 2004-07-02 | Toshiba Ceramics Co Ltd | Polishing cloth |
| JP2010045306A (en) | 2008-08-18 | 2010-02-25 | Kuraray Co Ltd | Polishing pad |
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2012
- 2012-02-08 US US13/978,000 patent/US20140170943A1/en not_active Abandoned
- 2012-02-08 CN CN2012800089921A patent/CN103347652A/en active Pending
- 2012-02-08 EP EP12747173.8A patent/EP2676771A1/en not_active Withdrawn
- 2012-02-08 KR KR1020137018461A patent/KR20140034128A/en not_active Application Discontinuation
- 2012-02-08 WO PCT/JP2012/052843 patent/WO2012111502A1/en active Application Filing
- 2012-02-08 SG SG2013061759A patent/SG192774A1/en unknown
- 2012-02-08 JP JP2012509418A patent/JPWO2012111502A1/en active Pending
- 2012-02-14 TW TW101104620A patent/TW201242714A/en unknown
Patent Citations (7)
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|---|---|---|---|---|
| US6749714B1 (en) * | 1999-03-30 | 2004-06-15 | Nikon Corporation | Polishing body, polisher, polishing method, and method for producing semiconductor device |
| CN1551303A (en) * | 1999-03-30 | 2004-12-01 | ������������ʽ���� | Polishing disk, polishing machine and method for manufacturing semiconductor |
| JP2001001255A (en) * | 1999-04-21 | 2001-01-09 | Seiko Epson Corp | Polishing cloth, polishing device and manufacture of semiconductor device |
| CN1871504A (en) * | 2003-10-31 | 2006-11-29 | 应用材料公司 | Polishing endpoint detection system and method using friction sensor |
| CN1654169A (en) * | 2004-02-05 | 2005-08-17 | Jsr株式会社 | Chemical mechanical polishing pad, production method thereof, and chemical mechanical polishing process |
| CN1950930A (en) * | 2004-02-23 | 2007-04-18 | 东洋橡胶工业株式会社 | Polishing pad and method for manufacture of semiconductor device using the same |
| US20070178812A1 (en) * | 2004-02-23 | 2007-08-02 | Toyo Tire & Rubber Co., Ltd. | Polishing pad and method for manufacture of semiconductor device using the same |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201242714A (en) | 2012-11-01 |
| KR20140034128A (en) | 2014-03-19 |
| WO2012111502A1 (en) | 2012-08-23 |
| SG192774A1 (en) | 2013-09-30 |
| JPWO2012111502A1 (en) | 2014-07-03 |
| EP2676771A1 (en) | 2013-12-25 |
| US20140170943A1 (en) | 2014-06-19 |
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