CN103346136A - Power module and packaging method thereof - Google Patents
Power module and packaging method thereof Download PDFInfo
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- CN103346136A CN103346136A CN2013102206057A CN201310220605A CN103346136A CN 103346136 A CN103346136 A CN 103346136A CN 2013102206057 A CN2013102206057 A CN 2013102206057A CN 201310220605 A CN201310220605 A CN 201310220605A CN 103346136 A CN103346136 A CN 103346136A
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- pcb board
- lead frame
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- power chip
- chip
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- 238000004806 packaging method and process Methods 0.000 title claims description 26
- 238000000034 method Methods 0.000 title claims description 10
- 238000000465 moulding Methods 0.000 claims abstract description 63
- 229920005989 resin Polymers 0.000 claims abstract description 61
- 239000011347 resin Substances 0.000 claims abstract description 61
- 238000001746 injection moulding Methods 0.000 claims abstract description 31
- 239000004065 semiconductor Substances 0.000 claims abstract description 16
- 238000002347 injection Methods 0.000 claims description 16
- 239000007924 injection Substances 0.000 claims description 16
- 239000000853 adhesive Substances 0.000 claims description 10
- 230000001070 adhesive effect Effects 0.000 claims description 10
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 9
- 238000012856 packing Methods 0.000 claims description 8
- 239000006071 cream Substances 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 5
- 239000003292 glue Substances 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- 239000011230 binding agent Substances 0.000 claims description 4
- 238000005476 soldering Methods 0.000 claims description 3
- 230000017525 heat dissipation Effects 0.000 abstract 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 239000000919 ceramic Substances 0.000 description 12
- 229910000831 Steel Inorganic materials 0.000 description 10
- 229910052782 aluminium Inorganic materials 0.000 description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 10
- 239000010959 steel Substances 0.000 description 10
- 239000000758 substrate Substances 0.000 description 10
- 239000006185 dispersion Substances 0.000 description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- 229910052802 copper Inorganic materials 0.000 description 7
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- 210000002683 foot Anatomy 0.000 description 6
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- 235000002991 Coptis groenlandica Nutrition 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
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- 238000004378 air conditioning Methods 0.000 description 1
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- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
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- 239000004033 plastic Substances 0.000 description 1
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
Abstract
The invention provides a power module which aims at the problem that burrs are prone to being generated on the heat dissipation face of an existing power module, so that heat dissipation is affected. The power module comprises a drive circuit part, a power semiconductor device part, a lead frame and a molding resin package. The power semiconductor device part is provided with at least one power chip, and the molding resin package coats the three parts. The drive circuit part comprises a PCB, a driver chip arranged on the PCB and a plurality of passive elements. The lead frame is provided with a power chip pad used for placing of the power chip. At least one hook latch is arranged at one end, close to the PCB, of the power chip pad and makes front contact with the PCB. A heat dissipation face is formed at the position, located below the power chip pad, of the outer surface of the molding resin package. A plurality of ejector pin holes are formed in the positions, below the PCB, of the molding resin package. Due to the fact that the ejector pin holes of the power module are formed below the PCB, namely, ejector pins eject the back face of the PCB when injection molding is performed, the burrs can not form on the heat dissipation face, the heat dissipation face makes good contact with a radiator, and therefore the heat dissipation performance is good.
Description
Technical field
The present invention relates to electric and electronic technical field, particularly relate to a kind of power model and method for packing thereof.
Background technology
Power model has a wide range of applications in motor-driven, field of power electronics such as comprising air-conditioning, washing machine and refrigerator.Power model comprises driving circuit section and the power semiconductor part of being made up of pcb board, driving chip and passive device, and the whole moulding resin that adopts encapsulates.The operating current of power model is very big, the heat that power chip produces under the working condition is very big so, the heat dispersion of the inside of requirement module is more strong more good, and the smaller the better at power chip Ji Dao and the distance between the radiating surface of this demand module lead frame, the filler thermal conductivity is more high more good.But in application, have between safety regulation power model and the radiator certain dielectric strength will be arranged, therefore between the power chip Ji Dao of lead frame and the fin enough dielectric strength requirements being arranged, be the bigger the better at the power chip Ji Dao of this demand lead frame and the distance between the radiating surface, the insulating properties of filler is more high more good.How guaranteeing the power chip Ji Dao of lead frame and heat radiation and the insulating requirements between the radiating surface, is that design and the manufacturing of whole power model is crucial.
In first kind of prior art, the power semiconductor part is fixed on the lead frame by scolder, driving circuit section is fixed on the pcb board by elargol, internal electric connects by lead frame and bonding(routing bonding) be connected, lead frame and pcb board are by the whole covering of moulding resin, the power chip Ji Dao of lead frame withstands fixing by scalable thimble elongation when the moulding resin injection moulding, finish and before moulding resin do not solidify in injection moulding, scalable thimble withdrawal, its space in die cavity can be filled by uncured moulding resin.Thereby reach the power chip Ji Dao of assurance lead frame to thermal diffusivity and the insulating requirements of radiating surface.In this scheme, scalable thimble must extend the power chip Ji Dao that withstands lead frame when the moulding resin injection moulding.In injection moulding process, moulding resin carries out strong friction to thimble, because 70% to 90% composition is the very big silicon dioxide of hardness in the moulding resin, and the high-termal conductivity in order to ensure moulding resin, silicon dioxide is sheet, and therefore in injection moulding process, flexible thimble has wearing and tearing.After injection moulding finished, scalable thimble will be withdrawn, and thimble can adhere to thinner flaky silicon dioxide before withdrawal, and thimble has a relative motion to mould when withdrawal, and this moment, thimble and mould all can be worn.When scalable thimble and mould when may wear to a certain degree, moulding resin can be infiltrated in its gap, will cause on the radiating surface of finished product power model jagged like this, burr can make loose contact between power model radiating surface and the radiator, the heat that makes power model produce when work can not in time distribute, and finally causes module to lose efficacy.For fear of the generation of burr, scalable thimble and injection mold then must regularly replace in the short period of time, can improve production cost greatly like this.For fear of changing expensive mould, the existing sleeves that between mould and scalable thimble, add carbide alloy that adopt more.Though can avoid in such event changing expensive mould, the cost of changing scalable thimble and carbide alloy sleeve also is very high, and the toughness of carbide alloy is lower, is easy to burst apart in the actual production of sleeve, this has also increased the quality risk of product.In order to make thimble after the moulding resin injection moulding finishes, can withdraw, in plastic package die, must additionally increase the mobile layer of a scalable thimble of control, can make the manufacture difficulty of mould and cost increase like this.
In second kind of prior art, the upper surface of lead frame fixedly has power semiconductor by scolder, lower surface is combined with the ceramic substrate of good heat conductivity such as AL2O3, ALN, BEO by elargol, drive part is fixed on the lead frame by elargol, internal electric connects by lead frame and bonding(routing bonding) be connected, lead frame, ceramic substrate and power chip are encapsulated by moulding resin, and the wherein one side of ceramic substrate exposes.The problems referred to above of first kind of prior art can not appear in second kind of power model of the prior art.But, the power model of this technical scheme, the wherein one side of ceramic substrate exposes.Operating current when power model is used is very big, to produce bigger heat so, that is to say that power model variations in temperature in actual applications is very big, and since the pottery thermal coefficient of expansion (5ppm/ ℃) and the thermal coefficient of expansion (17ppm/ ℃) of copper differ greatly, faying face at copper and ceramic material can produce bigger thermal stress like this, cause the warpage of power model, even the crack occurs.In case and warpage appears in power model, so when it engages by screw with radiator, the situation that occurs convex-concave on the composition surface, when tightening up a screw so, will produce bigger mechanical stress to ceramic substrate, pottery is again fragile material, thus can cause the damage of ceramic substrate, and the heat dispersion of ceramic substrate and the problem of decreasing insulating finally appear.Even pottery does not damage, because the warpage of ceramic substrate, so when it engages by screw with radiator, the situation that occurs convex-concave on the composition surface, cause the shell of power model to the thermal resistance increase of radiator, finally cause the heat dispersion of whole system to descend, cause in actual applications, the thermal failure risk of power model increases.And when being fixed to power model on the radiator by screw, if hard objects such as resin burr are arranged between the upper surface of spreader surface and power model, and because pottery is fragile material, the destruction of ceramic substrate be will cause, thereby the heat dispersion of power model and the reduction of insulation property caused.Simultaneously, owing to use ceramic substrate, can make that manufacture craft is more complicated, production cost is higher.
In the third prior art, insert the insulation adhesive linkage between lead frame power chip Ji Dao and the fin, in the moulding resin encapsulation by the insulation bonding lead frame of adhesive linkage and fin.The third power model of the prior art can solve the problems referred to above of first kind of prior art and second kind of prior art.But, in the technical program, need carry out insulating barrier and lead frame, insulating barrier and two interfaces of fin bonding simultaneously, therefore on bonding plane, the cavity appears easily, thereby make heat dispersion and the decreasing insulating of power model, and the insulating barrier of high thermal conductivity is owing to the applicability problem is difficult to be used.
Summary of the invention
Technical problem to be solved by this invention is the problem that influences heat radiation at being easy to generate burr on the existing power model radiating surface, and a kind of power model is provided.
It is as follows that the present invention solves the problems of the technologies described above the technical scheme that adopts:
A kind of power model is provided, comprise driving circuit section, the power semiconductor part, lead frame and coat the moulding resin packaging body of above-mentioned three parts, described driving circuit section comprises pcb board, be arranged at driving chip and a plurality of passive device on the described pcb board, described power semiconductor partly comprises at least one power chip, between described pcb board and the described lead frame, be electrically connected between described power chip and the described pcb board and between described power chip and the described lead frame, described lead frame has the power chip Ji Dao that places described power chip, described power chip Ji Dao is provided with at least one that contact with the front of described pcb board near an end of described pcb board and has contact with, the outer surface of described moulding resin packaging body forms a radiating surface in the position that is positioned at below the power chip base island, and the position that described moulding resin packaging body is positioned at described pcb board below forms a plurality of centre holes.
Further, between described pcb board and the described lead frame, the mode by the metal wire bonding realizes being electrically connected between described power chip and the described pcb board and between described power chip and the described lead frame.
Further, described power chip Ji Dao comprises the horizontal component of laying described power chip, and described radiating surface is a plane, and described radiating surface and described horizontal component parallel interval arrange.
Further, connect a radiator on the described radiating surface.
Further, also comprise described pcb board and lead frame are carried out mechanical connection to limit the position limiting structure of the relative position between described pcb board and the lead frame, described position limiting structure comprises first through hole and second through hole that are arranged at described pcb board two ends, is arranged on the hook of first on the described lead frame and second hook, described first hook and the first through hole interference fit, described second hook and the second through hole interference fit.
Further, the thermal coefficient of expansion of the moulding resin that described moulding resin packaging body adopts is 13-21ppm/ ℃, and its dielectric strength is 12-18KV/mm.
Further, the thermal coefficient of expansion of the moulding resin that described moulding resin packaging body adopts is 19ppm/ ℃, and its dielectric strength is 14KV/mm.
Power model centre hole of the present invention is formed on the below of pcb board, i.e. during injection moulding, thimble withstands on the pcb board back side, so can not form burr on the radiating surface, and radiating surface contacts well with radiator, and heat dispersion is good.And the distance between radiating surface and the power chip base island has guaranteed the dielectric strength of power model in the scope that safety requires.
In addition, the present invention also provides the method for packing of above-mentioned power model, comprises the steps:
S1, will install the pcb board that drives chip and a plurality of passive devices and the lead frame that installs power chip and be electrically connected and mechanical connection;
S2, with between pcb board and the lead frame, be electrically connected between power chip and the pcb board and between power chip and the lead frame;
S3, the structure that obtains among the S2 is put into the injection mold injection moulding, form the moulding resin packaging body that coats driving circuit section, power semiconductor part and lead frame;
Wherein, among the step S3, injection mold adopts fixedly thimble, during injection moulding, the end of power chip Ji Dao is injection molding mould and compresses, the other end relies on to have contact with the front of pcb board and contact, the horizontal component that power chip Ji Dao lays power chip then with the lower surface of mould cavity at interval, a plurality of fixedly thimbles then withstand on the balance of the back side assurance pcb board of pcb board;
S4, injection moulding are finished, and withdraw from injection mold, obtain packaged power model.
Further, step S1 is specially:
Apply tin cream at pcb board, a plurality of passive devices are placed on the tin cream, utilize a Reflow Soldering that a plurality of passive devices are welded on the pcb board;
Utilize non-conductive adhesive or electroconductive binder will drive chip adhesive on pcb board, and utilize the mode of wire bonds to drive chip and pcb board is electrically connected;
One position limiting structure is set pcb board and lead frame are carried out mechanical connection to limit the relative position between pcb board and the lead frame;
Utilize the scolding tin power chip to be bonded on the lead frame, and utilize the mode of wire bonds that power chip and lead frame are electrically connected;
Utilize mode or the bonding mode of conductive silver glue of wire bonds that pcb board and lead frame are electrically connected.
The method for packing of power model of the present invention, injection mold adopts fixedly thimble (thimble is not flexible), during injection moulding, the end of power chip Ji Dao is injection molding mould and compresses, the other end relies on to have contact with the front of pcb board and contacts, the horizontal component that power chip Ji Dao lays power chip then with the lower surface of mould cavity at interval, the back side that a plurality of fixedly thimbles then withstand on pcb board guarantees the balance of pcb board; When injection moulding was finished, thimble directly withdrawed from, and formed a plurality of centre holes below the pcb board back side, because the back side of pcb board covers by insulating material, so centre hole also meets the safety requirement.Under this kind structure, even fixedly thimble weares and teares to some extent and also can not cause radiating surface jagged, guaranteed the heat dispersion of power model, and fixedly the wear extent that in use allows of thimble is bigger, useful life can be longer.
Description of drawings
Fig. 1 is the structural representation of its driving circuit section of power model of providing of one embodiment of the invention;
Fig. 2 is the structural representation of its lead frame of power model of providing of one embodiment of the invention;
Fig. 3 is the structural representation (not comprising the moulding resin packaging body) of the power model that provides of one embodiment of the invention;
Fig. 4 is that the power model that provides of one embodiment of the invention is along the cutaway view on the pcb board Width;
When Fig. 5 is power model injection moulding shown in Figure 4 and the bonding state figure of injection mold.
Reference numeral is expressed as follows:
1, pcb board; 11, first through hole; 12, second through hole; 13, pad; 2, passive device; 3, lead frame; 31, first hook; 310, first elastic foot; 32, second hook; 320, second elastic foot; 33, pin; 34, rate chip Ji Dao; 340, horizontal component; 35, have contact with; 4, wire; 5, drive chip; 6, moulding resin packaging body; 61, radiating surface; 62, centre hole; 7, power chip; 8, injection mold; 81, fixing thimble.
Embodiment
In order to make technical problem solved by the invention, technical scheme and beneficial effect clearer, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explaining the present invention, and be not used in restriction the present invention.
Please in the lump referring to figs. 1 through Fig. 4, the power model that one embodiment of the invention provides comprises driving circuit section 100, power semiconductor part 200, lead frame 3 and coats the moulding resin packaging body 6 of above-mentioned three parts.
As shown in Figure 1, described driving circuit section 100 comprises pcb board 1, is arranged at driving chip 5 and a plurality of passive device 2 on the described pcb board 1.Herein, passive device 2 also claims passive device, for example resistance, electric capacity, inductance and transformer etc.
As shown in Figure 3, described power semiconductor partly comprises a plurality of power chips 7, certainly, it is specific embodiment of power semiconductor part among the figure, the quantity of the power chip 7 in the power semiconductor part can have varying number and kind according to the different application of power model, and power chip 7 is at least one.Described lead frame 3 has the power chip base island 34 of placing described power chip 7, and described power chip base island 34 is provided with at least one that contact with the front of described pcb board 1 near an end of described pcb boards 1 and has contact with 35; As shown in Figure 3, power chip base island 34 comprises a plurality of parts, all lays power chip on each part, and each part all is provided with one and has contact with 35.The outer surface of described moulding resin packaging body 6 forms a radiating surface 61 in the position that is positioned at below the power chip base island 34, and the position that described moulding resin packaging body 6 is positioned at described pcb board below forms a plurality of centre holes 62.
In the present embodiment, preferably, as shown in Figure 3, the mode by the metal wire bonding realizes being electrically connected between described pcb board 1 and the described lead frame 3, between described power chip 7 and the described pcb board 1 and between described power chip 7 and the described lead frame 3.Described wire is copper cash, aluminum steel or gold thread.
Preferably, aluminum steel bonding between described pcb board 1 and the described lead frame 3, more preferably, as shown in Figure 3, extend a plurality of pins 33 at lead frame 3, correspondingly be provided with a plurality of pads 13 on pcb board, each pad 13 passes through wire 4 bondings with the pin 33 of its correspondence position.Certainly, in other embodiments, pcb board 1 also can be realized being electrically connected with lead frame 3 by the bonding mode of conductive silver glue.
Preferably, aluminum steel bonding between described power chip 7 and the described pcb board 1.
Preferably, aluminum steel bonding between described power chip 7 and the described lead frame 3.
In the present embodiment, preferably, described power chip base island 34 comprises the horizontal component 340 of laying described power chip, and described radiating surface 61 is a plane, and with described horizontal component 340 parallel interval settings.Be the part of moulding resin packaging body 6 between radiating surface 61 and the horizontal component 340, the thickness of this part meets the dielectric strength requirement of safety defined.In addition, on described radiating surface also to connect a radiator.Radiator herein can be metal heat sink, also ceramic heat sink.The heat that power chip produces through lead frame, the conduction of moulding resin packaging body after, conduct radiator to the outside from radiating surface, gone out by heat sink radiates again.
In the present embodiment, power model also comprises described pcb board 1 and lead frame 3 is carried out mechanical connection to limit the position limiting structure of the relative position between described pcb board 1 and the lead frame 3, described position limiting structure comprises first through hole 11 and second through hole 12 that are arranged at described pcb board 1 two ends, is arranged on the hook of first on the described lead frame 3 31 and second hook 32, described first hook, 31 Widths are provided with diastrophic two first elastic foots 310 to the inside, and described two first elastic foots 310 push against in described first through hole 11; Described second hook, 32 Widths are provided with diastrophic two second elastic foots 320 to the inside, and described two second elastic foots 320 push against in described second through hole 12.Like this, first the hook 31, second the hook 32 respectively with first through hole 11, second through hole, 12 interference fit; Realized spacing between pcb board 1 and the lead frame 3.Above-mentioned position limiting structure can keep pcb board to reach the position of direction straight up in the horizontal direction well, in the transportation of producing, pcb board direction is straight down also controlled under the effect of frictional force, paste wafer at Dice bond() and Wire Bond(wire bonds) station, pcb board all has corresponding anchor clamps to fix it in the position of vertical direction in machine.In Molding(moulding resin mould envelope) station, in injection mold design have three fixedly thimble be used for the vertical direction position of control PCB, after the Molding station was finished, pcb board and lead frame will be wrapped by moulding resin.That is to say that pcb board can both obtain well spacing in whole process flow, therefore, encapsulate later power model, the position of pcb board is accurate.
In the present embodiment, the thermal coefficient of expansion of the moulding resin that described moulding resin packaging body adopts is 13-21ppm/ ℃, and its dielectric strength is 12-18KV/mm.Preferably, the thermal coefficient of expansion of the moulding resin that described moulding resin packaging body adopts is 19ppm/ ℃, and its dielectric strength is 14KV/mm.In the present embodiment, the thermal coefficient of expansion of the moulding resin that described moulding resin packaging body adopts is close with the coefficient of expansion of copper (17ppm/ ℃), therefore the situation of second kind of ceramic insulating layer buckling deformation of the prior art can not take place, and also pottery is good for the toughness of moulding resin and intensity, therefore also be difficult for destroyedly, the manufacturing cost of whole power model is also lower.Simultaneously, what moulding resin packaging body of the present invention was selected for use is the moulding resin of high-insulativity, and the dielectric strength height is when using vacuum mold that moulding resin is injected, can avoid the third empty problem of the prior art, the insulating properties of guaranteed output module and thermal diffusivity well well.
Moulding resin herein is common a kind of encapsulating material, it is a kind of mixture, its main component is that mass percent is the silicon dioxide (playing thermolysis) of 70-90%, epoxy resin about 10% (playing adhesive), other composition are a certain amount of curing agent, fire retardant and catalyst etc.Under the certain situation of thickness, by the proportion of adjusting silicon dioxide and heat-sinking capability (thermal coefficient of expansion) and the dielectric strength that shape (spherical or sheet) is adjusted moulding resin.In addition, silicon dioxide can replace with aluminium oxide in the above-mentioned moulding resin.
Power model centre hole of the present invention is formed on the below of pcb board, i.e. during injection moulding, thimble withstands on the pcb board back side, so can not form burr on the radiating surface, and radiating surface contacts well with radiator, and heat dispersion is good.And the distance between radiating surface and the power chip base island has guaranteed the dielectric strength of power model in the scope that safety requires.
In addition, the present invention also provides the method for packing of above-mentioned power model, comprises the steps:
S1, will install the pcb board that drives chip and a plurality of passive devices and the lead frame that installs power chip and be electrically connected and mechanical connection; Preferably, step S1 is specially:
Apply tin cream at pcb board 1, a plurality of passive devices 2 are placed on the tin cream, utilize a Reflow Soldering that a plurality of passive devices 2 are welded on the pcb board 1; Utilize non-conductive adhesive or electroconductive binder will drive chip 5 and be bonded on the pcb board 1, and utilize the mode of wire bonds will drive chip 5 to be electrically connected with pcb board 1; Above-mentioned non-conductive adhesive can be non-conductive elargol, epoxyn, synvaren and polyurethane adhesive etc. for example, and electroconductive binder can be conductive silver glue.Drive chip 5 and be electrically connected with the mode of pcb board 1 by wire bonds, herein, wire 4 is copper cash, gold thread or aluminum steel, is preferably gold thread.
One position limiting structure is set pcb board 1 and lead frame 3 are carried out mechanical connection to limit the relative position between described pcb board 1 and the lead frame 3;
Utilize scolding tin that power chip 7 is bonded on the lead frame, and utilize the mode of wire bonds that power chip 7 and lead frame 3 are electrically connected.Herein, wire 4 is copper cash, gold thread or aluminum steel, is preferably aluminum steel.
Utilize mode or the bonding mode of conductive silver glue of wire bonds that pcb board 1 and lead frame 3 are electrically connected.Herein, wire 4 is copper cash, gold thread or aluminum steel, is preferably aluminum steel.
S2, with between pcb board and the lead frame, be electrically connected between power chip and the pcb board and between power chip and the lead frame; Preferably, as shown in Figure 3, the mode by the metal wire bonding realizes being electrically connected between described pcb board 1 and the described lead frame 3, between described power chip 7 and the described pcb board 1 and between described power chip 7 and the described lead frame 3.Wire 4 among Fig. 3 is preferably aluminum steel.
S3, the structure that obtains among the S2 is put into the injection mold injection moulding, form the moulding resin packaging body that coats driving circuit section, power semiconductor part and lead frame; During as shown in Figure 5, for the power model injection moulding and the bonding state figure of injection mold 8.
Wherein, among the step S3, injection mold 8 adopts fixedly thimble 81, during injection moulding, one end on power chip base island 34 is injection molding mould 8 and compresses, the other end relies on and to have contact with 35 and contact with the front of pcb board 1, and the lower surface interval of 340 of horizontal components with the mould cavity of power chip is laid on power chip base island 34, and 81 on a plurality of fixedly thimbles withstand on the balance of the back side assurance pcb board 1 of pcb board 1; Preferably, fixedly thimble is 3, to guarantee the balance of pcb board.When moulding resin is injected, power chip base island 34 is subjected to moulding resin to the pressure of radiating surface, have contact with 35 with the restriction of pcb board under, the horizontal component 340 of power chip Ji Dao keeps certain intervals with the mould cavity lower surface, this interval is namely filled by moulding resin after injection moulding is finished, form the part of moulding resin packaging body, the lower surface of this part forms radiating surface 61.
S4, injection moulding are finished, and withdraw from injection mold, obtain packaged power model.After mould withdraws from, can below pcb board, form a plurality of centre holes.
Afterwards, obtain the power model finished product through after plating, Trim Molding and the test again.
The method for packing of power model of the present invention, injection mold adopts fixedly thimble (thimble is not flexible), during injection moulding, the end of power chip Ji Dao is injection molding mould and compresses, the other end relies on to have contact with the front of pcb board and contacts, the horizontal component that power chip Ji Dao lays power chip then with the lower surface of mould cavity at interval, the back side that a plurality of fixedly thimbles then withstand on pcb board guarantees the balance of pcb board; When injection moulding was finished, thimble directly withdrawed from, and formed a plurality of centre holes below the pcb board back side, because the back side of pcb board covers by insulating material, so centre hole also meets the safety requirement.Under this kind structure, even fixedly thimble weares and teares to some extent and also can not cause radiating surface jagged, guaranteed the heat dispersion of power model, and fixedly the wear extent that in use allows of thimble is bigger, useful life can be longer.
The above only is preferred embodiment of the present invention, not in order to limiting the present invention, all any modifications of doing within the spirit and principles in the present invention, is equal to and replaces and improvement etc., all should be included within protection scope of the present invention.
Claims (9)
1. power model, comprise driving circuit section, the power semiconductor part, lead frame and coat the moulding resin packaging body of above-mentioned three parts, described driving circuit section comprises pcb board, be arranged at driving chip and a plurality of passive device on the described pcb board, described power semiconductor partly comprises at least one power chip, between described pcb board and the described lead frame, be electrically connected between described power chip and the described pcb board and between described power chip and the described lead frame, described lead frame has the power chip Ji Dao that places described power chip, it is characterized in that, described power chip Ji Dao is provided with at least one that contact with the front of described pcb board near an end of described pcb board and has contact with, the outer surface of described moulding resin packaging body forms a radiating surface in the position that is positioned at below the power chip base island, and the position that described moulding resin packaging body is positioned at described pcb board below forms a plurality of centre holes.
2. power model according to claim 1, it is characterized in that the mode by the metal wire bonding realizes being electrically connected between described pcb board and the described lead frame, between described power chip and the described pcb board and between described power chip and the described lead frame.
3. power model according to claim 1 and 2 is characterized in that, described power chip Ji Dao comprises the horizontal component of laying described power chip, and described radiating surface is a plane, and described radiating surface and described horizontal component parallel interval arrange.
4. power model according to claim 3 is characterized in that, connects a radiator on the described radiating surface.
5. power model according to claim 1 and 2, it is characterized in that, also comprise described pcb board and lead frame are carried out mechanical connection to limit the position limiting structure of the relative position between described pcb board and the lead frame, described position limiting structure comprises first through hole and second through hole that are arranged at described pcb board two ends, is arranged on the hook of first on the described lead frame and second hook, described first hook and the first through hole interference fit, described second hook and the second through hole interference fit.
6. power model according to claim 1 is characterized in that, the thermal coefficient of expansion of the moulding resin that described moulding resin packaging body adopts is 13-21ppm/ ℃, and its dielectric strength is 12-18KV/mm.
7. power model according to claim 6 is characterized in that, the thermal coefficient of expansion of the moulding resin that described moulding resin packaging body adopts is 19ppm/ ℃, and its dielectric strength is 14KV/mm.
8. the method for packing of any described power model of claim 1-7 is characterized in that, comprises the steps:
S1, will install the pcb board that drives chip and a plurality of passive devices and the lead frame that installs power chip and be electrically connected and mechanical connection;
S2, with between pcb board and the lead frame, be electrically connected between power chip and the pcb board and between power chip and the lead frame;
S3, the structure that obtains among the S2 is put into the injection mold injection moulding, form the moulding resin packaging body that coats driving circuit section, power semiconductor part and lead frame;
Wherein, among the step S3, injection mold adopts fixedly thimble, during injection moulding, the end of power chip Ji Dao is injection molding mould and compresses, the other end relies on to have contact with the front of pcb board and contact, the horizontal component that power chip Ji Dao lays power chip then with the lower surface of mould cavity at interval, a plurality of fixedly thimbles then withstand on the balance of the back side assurance pcb board of pcb board;
S4, injection moulding are finished, and withdraw from injection mold, obtain packaged power model.
9. the method for packing of power model according to claim 8 is characterized in that, step S1 is specially:
Apply tin cream at pcb board, a plurality of passive devices are placed on the tin cream, utilize a Reflow Soldering that a plurality of passive devices are welded on the pcb board;
Utilize non-conductive adhesive or electroconductive binder will drive chip adhesive on pcb board, and utilize the mode of wire bonds to drive chip and pcb board is electrically connected;
One position limiting structure is set pcb board and lead frame are carried out mechanical connection to limit the relative position between pcb board and the lead frame;
Utilize scolding tin that power chip is bonded on the lead frame, and utilize the mode of wire bonds that power chip and lead frame are electrically connected;
Utilize mode or the bonding mode of conductive silver glue of wire bonds that pcb board and lead frame are electrically connected.
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| CN104658984A (en) * | 2013-11-19 | 2015-05-27 | 西安永电电气有限责任公司 | Plastic-encapsulated type intelligent power module |
| CN104979220A (en) * | 2014-04-02 | 2015-10-14 | 万国半导体股份有限公司 | Power semiconductor device and preparation method thereof |
| CN105805575A (en) * | 2016-04-15 | 2016-07-27 | 宁波市凯迪森照明科技有限公司 | LED floodlight |
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| CN113284871A (en) * | 2020-02-19 | 2021-08-20 | 珠海格力电器股份有限公司 | DBC substrate frame structure and forming jig and forming method thereof |
| TWI789793B (en) * | 2021-06-21 | 2023-01-11 | 立錡科技股份有限公司 | Intelligent power module |
| CN114040563A (en) * | 2021-11-05 | 2022-02-11 | 上海杰瑞兆新信息科技有限公司 | Packaging structure and packaging method of electronic product with high heat dissipation performance |
| CN115966542A (en) * | 2023-01-31 | 2023-04-14 | 海信家电集团股份有限公司 | Power module and electronic device having the same |
| CN115966542B (en) * | 2023-01-31 | 2023-10-13 | 海信家电集团股份有限公司 | Power module and electronic equipment with same |
| CN116469865A (en) * | 2023-06-19 | 2023-07-21 | 志豪微电子(惠州)有限公司 | Lead frame, manufacturing method of lead frame and intelligent power module |
| CN116469865B (en) * | 2023-06-19 | 2023-09-08 | 志豪微电子(惠州)有限公司 | Lead frame, manufacturing method of lead frame and intelligent power module |
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Denomination of invention: Power modules and their packaging methods Granted publication date: 20160127 Pledgee: Bank of China Limited by Share Ltd. Jilin branch Pledgor: JILIN SINO-MICROELECTRONICS SMART PARK ELECTRIC Co.,Ltd. Registration number: Y2024220000001 |
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