CN103337567A - GaN-based light emitting diode epitaxial wafer - Google Patents

Abstract

The invention discloses a GaN-based light emitting diode epitaxial wafer which comprises a sapphire substrate layer (1), a Buffer layer (2), a uGaN layer (3), an nGaN (4), an MQW (Multiple Quantum Well) emitting layer (5) and an HT- pGaN layer (7). The epitaxial wafer is characterized in that an LT-pGaN layer (6) is arranged between the MQW emitting layer (5) and the HT- pGaN layer (7). The epitaxial wafer can effectively solve the problem that the traditional epitaxial wafer is poor in antistatic capability, so that the puncturing and lighting efficiency of the chips is low.

Description

A kind of GaN based LED epitaxial slice

Technical field

The present invention relates to LED epitaxial wafer technical field, be specifically related to a kind of GaN based LED epitaxial slice.

Background technology

At present, the main flow of blue-green light LED is growth GaN material on sapphire or silicon carbide substrates, wherein the overwhelming majority adopts sapphire as substrate, owing to lattice mismatch and thermal mismatching bigger between Sapphire Substrate and the GaN material, cause producing in the GaN epitaxial loayer highdensity defective, for example threading dislocation.Experimental results show that these defectives are important channels that the reverse leakage electric current produces in the III group-III nitride based light-emitting diode.Existing epitaxial wafer in process of production, normally direct growth high temperature p-type GaN or growing p-type AlGaN behind the multiple quantum well layer of MQW luminescent layer InGaN/GaN of having grown, above-mentioned production process is because growth temperature is higher, form the destruction to the InGaN that closes on the cycle easily, its In component is separated out easily, caused the ESD variation.

Summary of the invention

The technical problem to be solved in the present invention provides a kind of GaN based LED epitaxial slice, and it is poor that this technical scheme effectively solves traditional epitaxial wafer antistatic effect, thereby causes chip to puncture and the low problem of luminous efficiency.

The present invention is achieved through the following technical solutions:

A kind of GaN based LED epitaxial slice, comprise Sapphire Substrate layer (1), Buffer-resilient coating (2), uGaN layer (3), nGaN(4), MQW luminescent layer (5) and HT-pGaN layer (7), it is characterized in that: be provided with LT-pGaN layer (6) between described MQW luminescent layer (5) and HT-pGaN layer (7).

The further Technological improvement plan of the present invention is:

Described LT-pGaN(6) thickness is 60nm.

The present invention compared with prior art, have following obvious advantage: the present invention arranges LT-pGaN layer between the MQW of traditional epitaxial wafer luminescent layer and HT-pGaN layer, this layer growth temperature is low, easily forming irregular structure after quantum well makes static easily disperse, the density of the immediate current that having reduced sparks produces, thereby improve the anti-ESD ability of GaN base LED chip, also improved simultaneously the quantum well interface quality, strengthen quantum well radiation intensity greatly, thereby improved the luminous efficiency of GaN base LED chip.

Description of drawings

Fig. 1 is structural representation of the present invention;

1 is that Sapphire Substrate layer, 2 is that Buffer-resilient coating, 3 is that uGaN layer, 4 is that nGaN, 5 is that MQW luminescent layer, 6 is LT(low temperature among Fig. 1)-pGaN layer, 7 is HT(high temperature)-the pGaN layer.

Embodiment

As shown in Figure 1, the present invention includes Sapphire Substrate layer 1, Buffer-resilient coating 2, uGaN layer 3, nGaN4, MQW luminescent layer 5 and HT-pGaN layer 7, be provided with LT-pGaN layer 6 between described MQW luminescent layer 5 and HT-pGaN layer 7, LT-pGaN layer 6 thickness are 60nm.

The part that the present invention does not relate to all prior art that maybe can adopt same as the prior art is realized.

Claims (2)

1. GaN based LED epitaxial slice, comprise Sapphire Substrate layer (1), Buffer-resilient coating (2), uGaN layer (3), nGaN(4), MQW luminescent layer (5) and HT-pGaN layer (7), it is characterized in that: be provided with LT-pGaN layer (6) between described MQW luminescent layer (5) and HT-pGaN layer (7).

2. a kind of GaN based LED epitaxial slice according to claim 1, it is characterized in that: described LT-pGaN layer (6) thickness is 60nm.

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