CN103336363A - All-aluminum electrostatic-actuation micro mirror and preparation method thereof - Google Patents
All-aluminum electrostatic-actuation micro mirror and preparation method thereof Download PDFInfo
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- CN103336363A CN103336363A CN2013102225005A CN201310222500A CN103336363A CN 103336363 A CN103336363 A CN 103336363A CN 2013102225005 A CN2013102225005 A CN 2013102225005A CN 201310222500 A CN201310222500 A CN 201310222500A CN 103336363 A CN103336363 A CN 103336363A
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Abstract
The invention provides an all-aluminum electrostatic actuation micro mirror. The all-aluminum electrostatic actuation micro mirror includes a micro mirror, a supporting column and a lower electrode. The micro mirror, the supporting column and the lower electrode are connected in the following manners that: the micro mirror is arranged at the uppermost layer; the supporting column is arranged at the middle; and the lower electrode is arranged at the lower layer. The micro mirror is connected with the lower electrode through the supporting column, and is supported by the supporting column; the micro mirror, the supporting column and the lower electrode are of all-aluminum structures; and the micro mirror can be adopted as a reflector and an upper electrode both, so stacked layers are few. The all-aluminum electrostatic actuation micro mirror of the invention is advantageous in simple structure and process, easiness in implementation, low cost, completely electrostatic actuation, capability of realizing continuous angle deflection, wide application range and convenient popularization; and the all-aluminum mirror surface of the all-aluminum electrostatic actuation micro mirror can improve the area efficiency of mirror surface reflection, and can be used for scanning, and developing and optical communication.
Description
Technical field
The present invention relates to a kind of MEMS micro-mirror device, belong to micro processing field, particularly, relate to a kind of full aluminium type static and drive micro mirror and preparation method thereof.
Background technology
In recent years, along with the MEMS technology rapid development, various optical device also develop to microminiaturized and integrated direction gradually.Micro mirror element is a kind of use MEMS (micro electro mechanical system) (Micro-Electro-Mechanical Systems, MEMS) small and drivable catoptron of process technology making.Wherein, the MEMS processing technology refers to by microelectronic processing technique development, and in conjunction with the processing technology of some distinctive body silicon and surface silicon.Micro mirror is normally made at semiconductor silicon, and the direction that reflects back light is controlled in the rotation that drives minute surface by extrinsic motivation, and its type of drive can be divided into electrostatic, electromagnetic type, piezo-electric type, electrothermic type.Electromagnetic type micro mirror sweep limit is big, the frequency height, but need the externally-applied magnetic field overall volume big, be fit to the external imaging not too high to volume requirement.Piezo-electric type micro mirror driving force is big, but sweep limit is little, and is few to its research.Electrothermic type micro mirror driving voltage is low, and frequency is low, is fit to wide-angle in-vivo imaging product.And the research of electrostatic micro mirror relatively early, and technology maturation, and its driving voltage is higher relatively, and deflection angle is little, and the sweep frequency height is fit to micro projection, scanner uni optical communication.So the research of the driving micro mirror of static has caused scientific research personnel's attention.
Find by literature search, TI company is in 1986 structures that proposed a kind of Digital Micromirror Device (DMD), obtain U.S. patent of invention 4615595(1986.10.7), it is mainly by millions of deflectable micro mirrors, the CMOS static memory, addressing electrode, bias electrode, york piece, compositions such as hinge, DMD is as a kind of image device, in widespread use and the projector equipment, the micromirror of this integrated morphology can change angle rapidly under the control of digital drive signals, in case receive corresponding signal, micromirror will tilt 10 °, thereby the reflection of incident light direction is changed; The rotation of micro mirror is controlled by the state of CMOS memory unit, and is finished by the electrostatic attraction that the voltage difference between micro mirror itself and the storage unit produces; When storage unit is in " opening " when being one state, micro mirror forwards to+and 10 °, light is just directly reflected away by micro mirror, and at this moment the respective pixel in the screen reaches the brightest; When storage unit is in " pass " namely during " 0 " state, micro mirror forwards-10 ° to, and light will be reflected on the light absorber, and at this moment the respective pixel in the screen will blackening; When micro mirror during at 0 °, then be in the state of quitting work.But the micro mirror portion of this Digital Micromirror Device adopts different metals with electrode portion, complex multilayered structures and digital control, and price is high.
Summary of the invention
At defective of the prior art, the purpose of this invention is to provide a kind of full aluminium type static and drive micro mirror, micro mirror portion and electrode portion all adopt constructed of aluminium, and can dual-purpose, reduce accumulation horizon, structure is more succinct, adopts simultaneously more that simple machining process realizes, overcomes existing product complex structure, the high deficiency of price.
According to an aspect of the present invention, provide a kind of full aluminium type static to drive micro mirror, comprise micro mirror portion, pillar and bottom electrode, wherein: the superiors are micro mirror portion, the centre is pillar, and lower floor is bottom electrode, double catoptron and the top electrode done of micro mirror portion, micro mirror portion is connected by pillar with bottom electrode and supports, and micro mirror portion, bottom electrode and pillar are constructed of aluminium for three layers.
Preferably, described micro mirror portion design parameter is: driving voltage 30V, 5 °～10 ° of angles of revolution, minute surface size 20*20～30*30 μ m
2The micro mirror portion of this all-aluminium construction can increase substantially the area of catoptron in the array, can make the anglec of rotation of micro mirror portion obtain 5 °～10 ° continuous variation.
The present invention is based on the principle of parallel plate electrostatic actuator, extrinsic motivated voltage between micro mirror portion and bottom electrode forms voltage difference between micro mirror portion and the bottom electrode, produces electrostatic attraction and drives the rotation of micro mirror portion.If electrostatic attraction F (x), impressed voltage V, electrode area S, DIELECTRIC CONSTANT
0, primary clearance g, displacement x, then the electrostatic attraction size can be determined by following formula:
From above formula as can be known, the size of electrostatic force and the square distance between the battery lead plate are inversely proportional to, and are directly proportional with the area of battery lead plate, reduce distance between plates from increasing electrostatic force with increase battery lead plate area.
According to a further aspect in the invention, provide a kind of above-mentioned full aluminium type static to drive the preparation method of micro mirror, this method utilizes plasma ashing to remove photoresist through third photo etching, secondary sputter at last, and is ingenious simple.
Described method concrete steps are as follows:
(1) at the ground floor aluminium film of glass basic surface sputter one layer thickness 4 μ m, the ground floor photoresist of spin coating thickness 0.6 μ m on this layer aluminium film adopts the mask version that designs that its exposure is shaped, and baking is 30 minutes under 100 ℃ of temperature;
(2) etching ground floor aluminium film;
(3) then continue the second layer photoresist of spin coating one layer thickness 1 μ m, exposure is shaped, and baking is 30 minutes under 100 ℃ of temperature;
(4) sputter thickness is the second layer aluminium film of 4 μ m, spin coating thickness 0.6 μ m the 3rd layer photoetching glue thereon, and exposure is shaped, and baking is 30 minutes under 80 ℃ of temperature;
(5) etching second layer aluminium film;
(6) carry out plasma ashing and remove photoresist layer.
Compared with prior art, the present invention has following beneficial effect:
The present invention adopts all-aluminium construction, and micro mirror portion, pillar, bottom electrode adopt aluminum to do entirely, the double top electrode of doing of micro mirror portion, and accumulation horizon is few, structure, technology are simple, are easy to realize, and be with low cost, and static drives fully, can realize continuous angular deflection, be widely used, the convenient popularization; Full aluminium minute surface of the present invention improves the long-pending efficient of mirror reflection surface in addition, not only can be used for scanning, can also be used for developing and optical communication.The present invention can adopt more that simple machining process realizes, overcomes existing product complex structure, the high deficiency of price.
Description of drawings
By reading the detailed description of non-limiting example being done with reference to the following drawings, it is more obvious that other features, objects and advantages of the present invention will become:
Fig. 1-Fig. 3 drives the micro-mirror structure synoptic diagram for the full aluminium type of the present invention static,
Fig. 4 drives micro mirror manufacture craft synoptic diagram for the full aluminium type of the present invention static.
Among the figure: 1 is micro mirror portion, and 2 is pillar, and 3 is bottom electrode.
Embodiment
The present invention is described in detail below in conjunction with specific embodiment.Following examples will help those skilled in the art further to understand the present invention, but not limit the present invention in any form.Should be pointed out that to those skilled in the art, without departing from the inventive concept of the premise, can also make some distortion and improvement.These all belong to protection scope of the present invention.
As Fig. 1, Fig. 2, shown in Figure 3, present embodiment provides a kind of full aluminium type static to drive micro mirror, comprise micro mirror portion 1, pillar 2 and bottom electrode 3, wherein: the superiors are micro mirror portion 1, and the centre is pillar 2, and lower floor is bottom electrode 3, micro mirror portion 1 double catoptron and the top electrode done, micro mirror portion 1 is connected by pillar 2 with bottom electrode 3 and supports, micro mirror portion 1 double catoptron and the top electrode done, and micro mirror portion 1, bottom electrode 3 and pillar are constructed of aluminium for 2 three layers.
As shown in Figure 4, among the figure: 1-ground floor aluminium film (Al1), 2-glass substrate, 3-ground floor photoresist (PR1), 4-second layer photoresist (PR2), 5-second layer aluminium film (Al2), 6-the 3rd layer photoetching glue (PR3).The described a kind of full aluminium type static of present embodiment drives the micro mirror manufacturing process steps, and is concrete:
(1) at the ground floor aluminium film Al1 of glass basic surface sputter one layer thickness 4 μ m, the ground floor photoresist PR1 of spin coating thickness 0.6 μ m on this layer aluminium film, the mask version that employing designs is shaped to its exposure, 30 minutes (among Fig. 4 (a), (b)) of baking under 100 ℃ of temperature;
(2) among etching ground floor aluminium film Al1(Fig. 4 (c));
(3) then continue the second layer photoresist PR2 of spin coating one layer thickness 1 μ m, exposure is shaped, 30 minutes (among Fig. 4 (d)) of baking under 100 ℃ of temperature;
(4) sputter thickness is the second layer aluminium film Al2 of 4 μ m, spin coating thickness 0.6 μ m the 3rd layer photoetching glue PR3 thereon, and exposure is shaped, 30 minutes (among Fig. 4 (e), (f)) of baking under 80 ℃ of temperature;
(5) among etching second layer aluminium film Al2(Fig. 4 (g));
(6) carry out plasma ashing and remove photoresist layer (among Fig. 4 (h));
In the present embodiment, photoresist (PR-Photo Resist) adopts OFPR-800(20cp), tackifier (Promoter) adopt OAP liquid (HMDS).Why using tackifier is to be: in photoetching process, the gluing quality directly has influence on the quality of photoetching, most photoresists are hydrophobic in the photoetching coating technique, and the hydroxyl of silicon chip surface and residual hydrone are hydrophilic, this causes the adhesion of photoresist and silicon chip relatively poor, and tackifier HMDS (hexamethyldisilazane) can improve this situation well.After OAP liquid (HMDS) is coated onto silicon chip surface, heats through baking oven and can react generation based on the compound of siloxane.It successfully becomes hydrophobicly by hydrophilic silicon chip surface, and its hydrophobic group can be combined with photoresist well, plays a part coupling agent.
Present embodiment adopts all-aluminium construction, and micro mirror portion, pillar, bottom electrode adopt aluminum to do entirely, the double top electrode of doing of micro mirror portion, and accumulation horizon is few, structure, technology are simple, are easy to realize, and be with low cost, and static drives fully, can realize continuous angular deflection, be widely used, the convenient popularization; The full aluminium minute surface of present embodiment improves the long-pending efficient of mirror reflection surface in addition, not only can be used for scanning, can also be used for developing and optical communication.
More than specific embodiments of the invention are described.It will be appreciated that the present invention is not limited to above-mentioned specific implementations, those skilled in the art can make various distortion or modification within the scope of the claims, and this does not influence flesh and blood of the present invention.
Claims (6)
1. a full aluminium type static drives micro mirror, it is characterized in that, comprise micro mirror portion, pillar and bottom electrode, wherein: the superiors are micro mirror portion, the centre is pillar, and lower floor is bottom electrode, double catoptron and the top electrode done of micro mirror portion, micro mirror portion is connected by pillar with bottom electrode and supports, and micro mirror portion, bottom electrode and pillar are constructed of aluminium for three layers.
2. a kind of full aluminium type static according to claim 1 drives micro mirror, it is characterized in that, described micro mirror portion design parameter is: driving voltage 30V, 5 °～10 ° of angles of revolution, minute surface size 20*20～30*30 μ m
2
3. a kind of full aluminium type static according to claim 1 and 2 drives micro mirror, it is characterized in that extrinsic motivated voltage between micro mirror portion and bottom electrode forms voltage difference between micro mirror portion and the bottom electrode, produces electrostatic attraction and drives the micro mirror rotation; If electrostatic attraction F (x), impressed voltage V, electrode area S, DIELECTRIC CONSTANT
0, primary clearance g, displacement x, then the electrostatic attraction size is determined by following formula:
Wherein the size of electrostatic force and the square distance between the battery lead plate are inversely proportional to, and are directly proportional with the area of battery lead plate.
4. a kind of full aluminium type static according to claim 1 and 2 drives micro mirror, it is characterized in that, described micro mirror portion general shape is of a size of 20*20～30*30 μ m
2, wherein the arm length of micro mirror portion is 10 μ m, 15 μ m or three kinds of sizes of 18 μ m, and the wide 3 μ m that all remain of cantilever, and cantilever and micro mirror portion minute surface main body gap are 3 μ m.
5. the preparation method of the described micro mirror of claim 1 is characterized in that, described method concrete steps are as follows:
(1) at the ground floor aluminium film of glass basic surface sputter one layer thickness 4 μ m, the ground floor photoresist of spin coating thickness 0.6 μ m on this layer aluminium film adopts the mask version that designs that its exposure is shaped, and baking is 30 minutes under 100 ℃ of temperature;
(2) etching ground floor aluminium film;
(3) then continue the second layer photoresist of spin coating one layer thickness 1 μ m, exposure is shaped, and baking is 30 minutes under 100 ℃ of temperature;
(4) sputter thickness is the second layer aluminium film of 4 μ m, spin coating thickness 0.6 μ m the 3rd layer photoetching glue thereon, and exposure is shaped, and baking is 30 minutes under 80 ℃ of temperature;
(5) etching second layer aluminium film;
(6) carry out plasma ashing and remove photoresist layer.
6. the preparation method of micro mirror according to claim 5 is characterized in that, in the described photoetching process, photoresist adopts OFPR-800(20cp), tackifier adopt OAP liquid.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103900945A (en) * | 2014-03-24 | 2014-07-02 | 江苏苏净集团有限公司 | Micro particulate matter 2.5 (PM2.5) detection sensor |
| CN104932098B (en) * | 2015-07-17 | 2017-04-05 | 京东方科技集团股份有限公司 | Micro mirror array and the backlight module and display device using which |
| CN113422899A (en) * | 2021-07-30 | 2021-09-21 | 深圳市汇顶科技股份有限公司 | Device and method for acquiring super-resolution image |
| CN114690400A (en) * | 2020-12-29 | 2022-07-01 | 成都极米科技股份有限公司 | Vibrating mirror driven by electrostatic force |
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| JPH09258119A (en) * | 1995-10-18 | 1997-10-03 | Texas Instr Inc <Ti> | Method for operating space light modulator using dmd and space light modulator using it |
| US6038058A (en) * | 1998-10-15 | 2000-03-14 | Memsolutions, Inc. | Grid-actuated charge controlled mirror and method of addressing the same |
| CN1472556A (en) * | 2003-06-24 | 2004-02-04 | 重庆大学 | Micromechanical optical switch made of metal material |
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2013
- 2013-06-06 CN CN201310222500.5A patent/CN103336363B/en not_active Expired - Fee Related
Patent Citations (3)
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|---|---|---|---|---|
| JPH09258119A (en) * | 1995-10-18 | 1997-10-03 | Texas Instr Inc <Ti> | Method for operating space light modulator using dmd and space light modulator using it |
| US6038058A (en) * | 1998-10-15 | 2000-03-14 | Memsolutions, Inc. | Grid-actuated charge controlled mirror and method of addressing the same |
| CN1472556A (en) * | 2003-06-24 | 2004-02-04 | 重庆大学 | Micromechanical optical switch made of metal material |
Non-Patent Citations (1)
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| 赵建平等: "扭转微镜的动力学模型及其动态特性分析", 《振动工程学报》 * |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103900945A (en) * | 2014-03-24 | 2014-07-02 | 江苏苏净集团有限公司 | Micro particulate matter 2.5 (PM2.5) detection sensor |
| CN104932098B (en) * | 2015-07-17 | 2017-04-05 | 京东方科技集团股份有限公司 | Micro mirror array and the backlight module and display device using which |
| US10571684B2 (en) | 2015-07-17 | 2020-02-25 | Boe Technology Group Co., Ltd. | Micro-mirror array having pillars which form portions of electrical paths between mirror electrodes and mirrors |
| CN114690400A (en) * | 2020-12-29 | 2022-07-01 | 成都极米科技股份有限公司 | Vibrating mirror driven by electrostatic force |
| CN114690400B (en) * | 2020-12-29 | 2023-05-02 | 极米科技股份有限公司 | Vibrating mirror driven by electrostatic force |
| CN113422899A (en) * | 2021-07-30 | 2021-09-21 | 深圳市汇顶科技股份有限公司 | Device and method for acquiring super-resolution image |
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| CN103336363B (en) | 2015-08-19 |
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