CN103336363B - Full aluminium profiles electrostatic drives micro mirror and preparation method thereof - Google Patents

Full aluminium profiles electrostatic drives micro mirror and preparation method thereof Download PDF

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Publication number
CN103336363B
CN103336363B CN201310222500.5A CN201310222500A CN103336363B CN 103336363 B CN103336363 B CN 103336363B CN 201310222500 A CN201310222500 A CN 201310222500A CN 103336363 B CN103336363 B CN 103336363B
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micro mirror
electrostatic
mirror portion
bottom electrode
layer
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CN103336363A (en
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李以贵
李新鹏
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Shanghai Jiaotong University
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Shanghai Jiaotong University
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Abstract

The invention provides a kind of full aluminium profiles electrostatic and drive micro mirror, comprising: micro mirror, pillar, bottom electrode, its connected mode is: the superiors are micro mirror, and centre is pillar, and lower floor is bottom electrode, and micro mirror and bottom electrode are connected by pillar and support; Micro mirror, pillar, bottom electrode all adopt all-aluminium construction, and micro mirror is double does catoptron and top electrode, and accumulation horizon is few.Structure of the present invention, technique are simple, are easy to realize, with low cost, and complete electrostatic drives, and can realize continuous angular deflection, be widely used, convenient popularization; Full aluminium minute surface of the present invention improves mirror-reflection area efficiency in addition, not only may be used for scanning, can also be used for development and optical communication.

Description

Full aluminium profiles electrostatic drives micro mirror and preparation method thereof
Technical field
The present invention relates to a kind of MEMS micro-mirror device, belong to micro processing field, particularly, relate to a kind of full aluminium profiles electrostatic and drive micro mirror and preparation method thereof.
Background technology
In recent years, along with developing rapidly of MEMS technology, various optical device is also gradually to microminiaturized and integrated future development.Micro mirror element is the small of a kind of use MEMS (micro electro mechanical system) (Micro-Electro-Mechanical Systems, MEMS) process technology making and drivable catoptron.Wherein, MEMS processing technology refers to and is developed by microelectronic processing technique, and in conjunction with the processing technology of some distinctive body silicon and surface silicon.Micro mirror normally makes on semiconductor silicon, and drive the rotation of minute surface to control the direction reflecting rear light by extrinsic motivation, its type of drive can be divided into electrostatic, electromagnetic type, piezo-electric type, electrothermic type.Electromagnetic type micro mirror sweep limit is large, and frequency is high, but needs externally-applied magnetic field overall volume large, is applicable to the external imaging not too high to volume requirement.Piezo-electric type micro mirror driving force is large, but sweep limit is little, few to its research.Electrothermic type micro mirror driving voltage is low, and frequency is low, is applicable to wide-angle in-vivo imaging product.And the research of electrostatic micro mirror is relatively early, and technology maturation, its driving voltage is relatively high, and deflection angle is little, and sweep frequency is high, is applicable to micro projection, scanner uni optical communication.So the research of the driving micro mirror of electrostatic causes the attention of scientific research personnel.
Find by literature search, TI company proposes the structure of a kind of Digital Micromirror Device (DMD) 1986, obtain U.S. patent Nos 4615595(1986.10.7), it is primarily of millions of deflectable micro mirrors, CMOS static memory, addressing electrode, bias electrode, york piece, the compositions such as hinge, DMD is as a kind of image device, in widespread use and projector equipment, the micromirror of this integrated morphology can change angle rapidly under the control of digital drive signals, once receive corresponding signal, micromirror will tilt 10 °, thus the reflection direction of incident light is changed, the rotation of micro mirror is controlled by the state of CMOS memory unit, and the electrostatic attraction produced by the voltage difference between micro mirror itself and storage unit has come, when storage unit is in "ON" and one state, micro mirror forwards+10 ° to, and light is just directly reflected away by micro mirror, and the respective pixel at this moment in screen reaches the brightest, when storage unit be in "Off" namely " 0 " state time, micro mirror forwards-10 ° to, and light will be reflected on light absorber, and the respective pixel at this moment in screen will blackening, when micro mirror is at 0 °, be then in the state of quitting work.But micro mirror portion and the electrode section of this Digital Micromirror Device adopt different metals, complicated sandwich construction and digital control, price is high.
Summary of the invention
For defect of the prior art, the object of this invention is to provide a kind of full aluminium profiles electrostatic and drive micro mirror, micro mirror portion and electrode section all adopt constructed of aluminium, and can dual-purpose, reduce accumulation horizon, structure is more succinct, adopts more simple processing technology to realize simultaneously, overcomes the deficiency that existing product complex structure, price are high.
According to an aspect of the present invention, a kind of full aluminium profiles electrostatic is provided to drive micro mirror, comprise micro mirror portion, pillar and bottom electrode, wherein: the superiors are micro mirror portion, centre is pillar, and lower floor is bottom electrode, and micro mirror portion is double does catoptron and top electrode, micro mirror portion and bottom electrode are connected by pillar and support, and micro mirror portion, bottom electrode and three layers, pillar are constructed of aluminium.
Preferably, described micro mirror portion design parameter is: driving voltage 30V, 5 ° ~ 10 °, angle of revolution, minute surface size 20*20 ~ 30*30 μm 2.The micro mirror portion of this all-aluminium construction can increase substantially the area of catoptron in array, and the anglec of rotation in micro mirror portion can be made to obtain the consecutive variations of 5 ° ~ 10 °.
The present invention is based on the principle of parallel plate electrostatic actuator, extrinsic motivated voltage between micro mirror portion and bottom electrode, between micro mirror portion and bottom electrode, coating-forming voltage is poor, produces electrostatic attraction and drives micro mirror portion to rotate.If electrostatic attraction F (x), impressed voltage V, electrode area S, DIELECTRIC CONSTANT ε 0, primary clearance g, displacement x, then electrostatic attraction size can be determined by following formula:
F ( x ) = 1 2 ϵ 0 S ( g - x ) 2 V 2
From above formula, the square distance between the size of electrostatic force and battery lead plate is inversely proportional to, and is directly proportional to the area of battery lead plate, reduces distance between plates and can increase electrostatic force from increase battery lead plate area.
According to a further aspect in the invention, provide a kind of above-mentioned full aluminium profiles electrostatic to drive the preparation method of micro mirror, the method, through third photo etching, secondary sputtering, finally utilizes plasma ashing to remove photoresist, simply ingenious.
Described method concrete steps are as follows:
(1) sputter the ground floor aluminium film of a layer thickness 4 μm at glass basic surface, the ground floor photoresist of spin coating thickness 0.6 μm on this layer of aluminium film, adopt the mask plate designed to be shaped to its exposure, dry 30 minutes at 100 DEG C of temperature;
(2) etching of first layer aluminium film;
(3) then continue the second layer photoresist of spin coating a layer thickness 1 μm, exposure is shaped, and dries 30 minutes at 100 DEG C of temperature;
(4) sputter the second layer aluminium film that thickness is 4 μm, spin coating thickness 0.6 μm of third layer photoresist thereon, exposure is shaped, and dries 30 minutes at 80 DEG C of temperature;
(5) etching of second layer aluminium film;
(6) carry out plasma ashing and remove photoresist layer.
Compared with prior art, the present invention has following beneficial effect:
The present invention adopts all-aluminium construction, and micro mirror portion, pillar, bottom electrode adopt aluminum to do entirely, and micro mirror portion is double does top electrode, and accumulation horizon is few, structure, technique are simple, are easy to realize, with low cost, and complete electrostatic drives, continuous angular deflection can be realized, be widely used, convenient popularization; Full aluminium minute surface of the present invention improves mirror-reflection area efficiency in addition, not only may be used for scanning, can also be used for development and optical communication.The present invention can adopt more simple processing technology to realize, and overcomes the deficiency that existing product complex structure, price are high.
Accompanying drawing explanation
By reading the detailed description done non-limiting example with reference to the following drawings, other features, objects and advantages of the present invention will become more obvious:
Fig. 1-Fig. 3 is that the full aluminium profiles electrostatic of the present invention drives micro-mirror structure schematic diagram,
Fig. 4 is that the full aluminium profiles electrostatic of the present invention drives micro mirror manufacture craft schematic diagram.
In figure: 1 is micro mirror portion, 2 is pillar, and 3 is bottom electrode.
Embodiment
Below in conjunction with specific embodiment, the present invention is described in detail.Following examples will contribute to those skilled in the art and understand the present invention further, but not limit the present invention in any form.It should be pointed out that to those skilled in the art, without departing from the inventive concept of the premise, some distortion and improvement can also be made.These all belong to protection scope of the present invention.
As shown in Figure 1, Figure 2, Figure 3 shows, the present embodiment provides a kind of full aluminium profiles electrostatic to drive micro mirror, comprise micro mirror portion 1, pillar 2 and bottom electrode 3, wherein: the superiors are micro mirror portion 1, centre is pillar 2, and lower floor is bottom electrode 3, micro mirror portion 1 is double does catoptron and top electrode, micro mirror portion 1 and bottom electrode 3 are connected by pillar 2 and support, and micro mirror portion 1 is double does catoptron and top electrode, and micro mirror portion 1, bottom electrode 3 and 2 three layers, pillar are constructed of aluminium.
Top electrode except as except catoptron, also doublely does in micro mirror portion 1.As shown in Figure 3, its overall physical dimensions is 20*20 ~ 30*30 μm 2, wherein the arm length in micro mirror portion can make 10 μm, 15 μm, 18 μm of three kinds of sizes, and cantilever is wide all remains 3 μm, and cantilever and micro mirror portion minute surface body gap are 3 μm.The micro mirror of this contour structures, is conducive under impressed voltage, produces deflection, makes micro mirror portion obtain the change of continuous print angle.
As shown in Figure 4, in figure: 1-ground floor aluminium film (Al1), 2-glass substrate, 3-ground floor photoresist (PR1), 4-second layer photoresist (PR2), 5-second layer aluminium film (Al2), 6-third layer photoresist (PR3).Described in the present embodiment, a kind of full aluminium profiles electrostatic drives micro mirror manufacturing process steps, concrete:
(1) the ground floor aluminium film Al1 of a layer thickness 4 μm is sputtered at glass basic surface, the ground floor photoresist PR1 of spin coating thickness 0.6 μm on this layer of aluminium film, adopt the mask plate designed to be shaped to its exposure, at 100 DEG C of temperature, dry 30 minutes (in Fig. 4 (a), (b));
(2) in etching of first layer aluminium film Al1(Fig. 4 (c));
(3) then continue the second layer photoresist PR2 of spin coating a layer thickness 1 μm, exposure is shaped, at 100 DEG C of temperature, dry 30 minutes (in Fig. 4 (d));
(4) sputter the second layer aluminium film Al2 that thickness is 4 μm, spin coating thickness 0.6 μm of third layer photoresist PR3 thereon, exposure is shaped, at 80 DEG C of temperature, dry 30 minutes (in Fig. 4 (e), (f));
(5) in etching of second layer aluminium film Al2(Fig. 4 (g));
(6) carry out plasma ashing and remove photoresist layer (in Fig. 4 (h)); .
In the present embodiment, photoresist (PR-Photo Resist) adopts OFPR-800(20cp), tackifier (Promoter) adopt OAP liquid (HMDS).Tackifier why are used to be: in a lithographic process, gluing quality directly has influence on the quality of photoetching, in photoetching coating technique, most photoresist is hydrophobic, and the hydroxyl of silicon chip surface and residual hydrone are hydrophilic, this causes the adhesion of photoresist and silicon chip poor, and tackifier HMDS (hexamethyldisilazane) can improve this situation well.After OAP liquid (HMDS) is coated onto silicon chip surface, the compound that can react and generate based on siloxane of heating through baking oven.Silicon chip surface successfully becomes hydrophobic from hydrophilic by it, and its hydrophobic group can be combined with photoresist well, plays a part coupling agent.
The present embodiment adopts all-aluminium construction, and micro mirror portion, pillar, bottom electrode adopt aluminum to do entirely, and micro mirror portion is double does top electrode, and accumulation horizon is few, structure, technique are simple, are easy to realize, with low cost, and complete electrostatic drives, continuous angular deflection can be realized, be widely used, convenient popularization; The full aluminium minute surface of the present embodiment improves mirror-reflection area efficiency in addition, not only may be used for scanning, can also be used for development and optical communication.
Above specific embodiments of the invention are described.It is to be appreciated that the present invention is not limited to above-mentioned particular implementation, those skilled in the art can make various distortion or amendment within the scope of the claims, and this does not affect flesh and blood of the present invention.

Claims (5)

1. the preparation method of a full aluminium profiles electrostatic driving micro mirror, described full aluminium profiles electrostatic drives micro mirror, comprise micro mirror portion, pillar and bottom electrode, wherein: the superiors are micro mirror portion, centre is pillar, and lower floor is bottom electrode, and micro mirror portion is double does catoptron and top electrode, micro mirror portion and bottom electrode are connected by pillar and support, and micro mirror portion, bottom electrode and three layers, pillar are constructed of aluminium; It is characterized in that, described method concrete steps are as follows:
(1) sputter the ground floor aluminium film of a layer thickness 4 μm at glass basic surface, the ground floor photoresist of spin coating thickness 0.6 μm on this layer of aluminium film, adopt the mask plate designed to be shaped to its exposure, dry 30 minutes at 100 DEG C of temperature;
(2) etching of first layer aluminium film;
(3) then continue the second layer photoresist of spin coating a layer thickness 1 μm, exposure is shaped, and dries 30 minutes at 100 DEG C of temperature;
(4) sputter the second layer aluminium film that thickness is 4 μm, spin coating thickness 0.6 μm of third layer photoresist thereon, exposure is shaped, and dries 30 minutes at 80 DEG C of temperature;
(5) etching of second layer aluminium film;
(6) carry out plasma ashing and remove photoresist layer.
2. a kind of full aluminium profiles electrostatic according to claim 1 drives the preparation method of micro mirror, and it is characterized in that, described micro mirror portion design parameter is: driving voltage 30V, 5 ° ~ 10 °, angle of revolution, minute surface size 20*20 ~ 30*30 μm 2.
3. a kind of full aluminium profiles electrostatic according to claim 1 and 2 drives the preparation method of micro mirror, and it is characterized in that, extrinsic motivated voltage between micro mirror portion and bottom electrode, between micro mirror portion and bottom electrode, coating-forming voltage is poor, produces electrostatic attraction and drives micro mirror to rotate; If electrostatic attraction F (x), impressed voltage V, electrode area S, DIELECTRIC CONSTANT ε 0, primary clearance g, displacement x, then electrostatic attraction size is determined by following formula:
F ( x ) = 1 2 ϵ 0 S ( g - x ) 2 V 2
Square distance wherein between the size of electrostatic force and battery lead plate is inversely proportional to, and is directly proportional to the area of battery lead plate.
4. a kind of full aluminium profiles electrostatic according to claim 1 and 2 drives the preparation method of micro mirror, and it is characterized in that, described micro mirror portion overall physical dimensions is 20*20 ~ 30*30 μm 2, wherein the arm length in micro mirror portion is 10 μm, 15 μm or 18 μm of three kinds of sizes, and cantilever is wide all remains 3 μm, and cantilever and micro mirror portion minute surface body gap are 3 μm.
5. a kind of full aluminium profiles electrostatic according to claim 1 drives the preparation method of micro mirror, it is characterized in that, in described photoetching process, photoresist adopts OFPR-800, and viscosity number is 20cp, and tackifier adopt OAP liquid.
CN201310222500.5A 2013-06-06 2013-06-06 Full aluminium profiles electrostatic drives micro mirror and preparation method thereof Expired - Fee Related CN103336363B (en)

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CN103900945B (en) * 2014-03-24 2017-07-28 江苏苏净集团有限公司 Miniature PM2.5 detection sensors
CN104932098B (en) * 2015-07-17 2017-04-05 京东方科技集团股份有限公司 Micro mirror array and the backlight module and display device using which
CN114690400B (en) * 2020-12-29 2023-05-02 极米科技股份有限公司 Vibrating mirror driven by electrostatic force

Citations (2)

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Publication number Priority date Publication date Assignee Title
US6038058A (en) * 1998-10-15 2000-03-14 Memsolutions, Inc. Grid-actuated charge controlled mirror and method of addressing the same
CN1472556A (en) * 2003-06-24 2004-02-04 重庆大学 Micromechanical optical switch made of metal material

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Publication number Priority date Publication date Assignee Title
US6038058A (en) * 1998-10-15 2000-03-14 Memsolutions, Inc. Grid-actuated charge controlled mirror and method of addressing the same
CN1472556A (en) * 2003-06-24 2004-02-04 重庆大学 Micromechanical optical switch made of metal material

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