CN103325778B - Light-emitting device and ligthing paraphernalia - Google Patents

Light-emitting device and ligthing paraphernalia Download PDF

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Publication number
CN103325778B
CN103325778B CN201310175659.6A CN201310175659A CN103325778B CN 103325778 B CN103325778 B CN 103325778B CN 201310175659 A CN201310175659 A CN 201310175659A CN 103325778 B CN103325778 B CN 103325778B
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CN
China
Prior art keywords
metal component
side metal
light
insulating body
back side
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Expired - Fee Related
Application number
CN201310175659.6A
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Chinese (zh)
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CN103325778A (en
Inventor
别田惣彦
小川光三
松田周平
西村洁
柴野信雄
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Toshiba Lighting and Technology Corp
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Toshiba Lighting and Technology Corp
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Filing date
Publication date
Priority claimed from JP2009242119A external-priority patent/JP2011091135A/en
Priority claimed from JP2009266558A external-priority patent/JP5375552B2/en
Application filed by Toshiba Lighting and Technology Corp filed Critical Toshiba Lighting and Technology Corp
Publication of CN103325778A publication Critical patent/CN103325778A/en
Application granted granted Critical
Publication of CN103325778B publication Critical patent/CN103325778B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

Abstract

The present invention provides the substrate of a kind of ceramic to be difficult to Yin Re and the light-emitting device of warpage occurs.Light-emitting device (10) possesses insulating body (11), right side metal component (12), light source (13) and back side metal component (14).Insulating body is ceramic.The surface (installed surface (11A)) of insulating body (11) is split and be configured to right side metal component (12).Light source (13) is installed in right side metal component (12).Back side metal component (14) is located at the back side (11B) of insulating body (11).Right side metal component (12) including: the 1st right side metal component and the 2nd right side metal component.Light source (13) is installed on the 1st right side metal component.2nd right side metal component and the 1st right side metal component are that the mode of electric insulation is spaced setting, and at least part of peripheral part being to be located at insulating body (11).

Description

Light-emitting device and ligthing paraphernalia
Subject application is invention entitled " light-emitting device and ligthing paraphernalia ", Application No. 201010518806.1 special The divisional application of profit application case.
Female case of subject application is on October 21st, 2009 based on prior Japanese Patent application case 2009-242119( Application) and Japanese patent application case 2009-266558(apply on November 24th, 2009), and require therein excellent First weighing, entire contents is disclosed in this with reference example.
This divisional application also requires that above-mentioned priority.
Technical field
Embodiments of the present invention relate to a kind of light-emitting device possessing semiconductor light-emitting elements and possess light-emitting device Ligthing paraphernalia.
Background technology
One is had to use light emitting diode (light emitting diode, LED) chip (chip) to make in light source Light-emitting device for semiconductor light-emitting elements.LED improves luminous efficiency, therefore as office (office) or general lighting Used with the light source of the relatively large ligthing paraphernalia waited.Further, in order to extend the purposes as light source, it is desirable to conversion The LED of the high and high output of efficiency.In order to realize the LED of high output, the thermal efficiency produced during LED luminescence how is made to dispel the heat well Become important topic.
There is a kind of electric power with more than 1W to make the light-emitting device of LED chip lighting.By the 1st metal level, insulating core (core) and the 2nd cambial substrate of metal level be used as install LED chip substrate.Insulating core is smooth pottery (ceramics) make.1st metal level in order to LED chip is carried out distribution is the copper of excellent electric conductivity or aluminum is made, Pattern (pattern) is formed on one face of insulating core.Multiple LED chip are arranged on design (design) and become the 1st of pattern the On metal level.2nd metal level be excellent thermal conductivity copper become or aluminum is made and substantially one and be formed flatly with the 1st gold medal Belonging to layer is on the face of insulating core of opposition side, concurrently waves heat sinking function to engage with radiating component rather than undertakes electric connection merit Energy.This light-emitting device employs the material of excellent thermal conductivity for the 2nd metal level, and therefore produced by LED, heat is good by efficiency Diffuse in substrate.Therefore, this light-emitting device, compared with the situation without heat sinking function, can make LED work with big electric current Make.
And, there is a kind of light-emitting device, it uses the pottery that thermal conductivity is high to be used as the circuit substrate for installing LED. By utilizing this circuit substrate to conduct heat produced by LED, substrate can be suppressed to deform upon.This light-emitting device with LED institute The side installed is that opposition side forms metal bond pattern.The bond pattern of light-emitting device utilize Pb-free solder and with phase Engage to the heat-radiating substrate of configuration.In order to avoid producing crack (crack) with heat-radiating substrate when bond pattern is welded, dispel the heat base Plate is to be formed by the material that the material identical with bond pattern or coefficient of thermal expansion are roughly the same.Light-emitting device is being configured with LED Corresponding bond pattern and the heat-radiating substrate in position between the surrounding at master (main) junction surface that formed there is open area.Open Region makes crack be not up to main junction surface.
[look-ahead technique document]
[patent documentation]
[patent documentation 1] Japanese Patent Laid-Open 2005-79593 publication
[patent documentation 2] Japanese Patent Laid-Open 2009-212367 publication
But, at the light-emitting device using the substrate being bonded to the 1st metal level and the 2nd metal level relative to insulating core In, the 1st metal level and the 2nd metal level the most directly engage or seal.The 1st metal level and the 2nd metal level will be made The substrate being directly joined insulating core and constitute is referred to as direct copper (Direct Copper Bonding, DCB) substrate, by profit The substrate making the 1st metal level and the 2nd metal level be engaged in insulating core and constitute with Pb-free solder is referred to as Active metal seal (Active Metal Bonding, AMB) substrate.Constitute these DCB substrates and the insulating core of AMB substrate and the 1st metal level Or the 2nd the material of metal level different, therefore coefficient of thermal expansion and heat-transfer rate are the most different.1st metal level is joined to be formed Line chart case and be partially formed with metal level.2nd metal level, in order to play thermolysis, is formed with metal throughout the most whole Layer.So, owing to the pattern form of the 1st metal level and the 2nd metal level is different, if therefore suffering hot environment in the fabrication stage Or rapid variations in temperature, substrate entirety will produce obvious warpage.It addition, substrate to be used sending out of the pottery that thermal conductivity is high Electro-optical device does not consider to prevent the globality warpage of substrate.
If substrate generation globality warpage, then, in the operation manufacturing light-emitting device, operability will be deteriorated.And, protect The light-emitting device holding state that warpage produced and complete is when being assembled in luminaire, it is impossible to fully obtains and is used for dispelling the heat Housing (case) component or the contact area of the radiating component such as fin (heat sink).I.e., it is impossible to LED chip is produced Heat transfer to housing member or radiating component.Thus, luminous efficiency reduces, thus cannot obtain the light beam meeting design load. And, if substrate generation warpage, gap can be formed between substrate and housing member or radiating component.If between eliminating Gap and use the securing member of screw etc. to carry out exceedingly fastening base, then substrate may produce crack and damaged.
DCB substrate strengthens the thickness of the 1st metal level to improve thermostability.2nd metal level of DCB substrate compares insulating core Thin, and it is engaged in heat radiation via connecting materials such as scolding tin, hot lubricating oil (grease), phase transformation adhesive tape (tape) or hot glue cloth Sheet.Or, DCB substrate will be connected to the 2nd metal level than the 2nd metal thickness and wide base (base).Base is by by bolt Or rivet (rivet) is through being located at 2 otch of perimembranous and be fixed to fin etc. (bolt).But, if DCB substrate it Arranging base separately outward, parts count will increase and cost (cost) will uprise.
If Pb-free solder, then the melt temperature of scolding tin is about 230 DEG C, installs to the 1st metal less than by LED chip The heat resisting temperature of the binding material of layer.When using scolding tin to install the 2nd metal level to fin as connecting material, if Light-emitting device uses in high temperature environments, or repeatedly applies variations in temperature because lighting is turned off the light, it is likely that can be because of high temperature Creep (creep) or thermal stress fatigue and cause scolding tin that deterioration or crack occur.The state keeping good to make solder sections divide, The electric power to LED chip supply must be suppressed, too high with the temperature avoiding DCB substrate.But, this way has run counter to raising LED The requirement of the brightness of chip.
Method as fixing cooling fins direct on DCB substrate, it is considered to utilize the spiral shell formed on the insulating core of DCB substrate Silk hole fixes fin.But, the best on following 2.First, when the moment of torsion (torque) of fastening screw is too strong Time, owing to insulating core is ceramic, it is thus possible to breakage can occur.2nd metal level of second, DCB substrate and the line of fin The coefficient of expansion is big compared with the linear expansion coefficient of DCB substrate, if therefore DCB substrate rises with the temperature of fin, then DCB substrate has Time warpage also can occur.Now, stress may concentrate on screw hole and cause insulating core that breakage occurs.It is therefore desirable to it is a kind of Do not use the part base beyond light-emitting device that DCB substrate is fixed on the technology of the radiators such as fin.
Summary of the invention
Therefore it provides the substrate of a kind of ceramic is difficult to Yin Re and the light-emitting device of warpage occurs and possesses this luminescence dress The ligthing paraphernalia put.
The light-emitting device of one embodiment has insulating body, right side metal component, semiconductor light-emitting elements and back-side gold Metal elements.Insulating body is ceramic.Right side metal component is split and is configured at the surface of insulating body.Semiconductor light-emitting elements It is installed in right side metal component.Back side metal component is formed at insulation with the thickness identical or thinner with right side metal component The back side of matrix.The volume of back side metal component and the volume of right side metal component are in a ratio of more than 50%.Further, an enforcement The ligthing paraphernalia of mode possesses this light-emitting device.
(effect of invention)
The light-emitting device that volume is more than 50% making back side metal component relative to the volume of right side metal component can make The warpage that the substrate comprising insulating body occurs because of heat is suppressed.And, possess this that can suppress substrate generation warpage The ligthing paraphernalia of electro-optical device, by making the thermal efficiency of substrate distribute well, and makes the life-span of semiconductor light-emitting elements stablize, with The illumination of stay in grade is provided.
Accompanying drawing explanation
Figure 1A is the plane graph of the light-emitting device observing the 1st embodiment from light radiation side.
Figure 1B is the profile of the light-emitting device along the 1b-1b line in Figure 1A.
Fig. 1 C is the back view of the light-emitting device shown in Figure 1A.
Fig. 2 A is the profile of the ligthing paraphernalia with the light-emitting device shown in Figure 1A.
Fig. 2 B is the front elevation observing the ligthing paraphernalia shown in Fig. 2 A from light radiation side.
Fig. 3 A is the plane graph of the light-emitting device observing the 2nd embodiment from light radiation side.
Fig. 3 B is the profile of the light-emitting device along the 3b-3b line in Fig. 3 A.
Fig. 3 C is the back view of the light-emitting device shown in Fig. 3 A.
Fig. 4 A is the plane graph of the light-emitting device observing the 3rd embodiment from light radiation side.
Fig. 4 B is the profile of the light-emitting device along the 4b-4b line in Fig. 4 A.
Fig. 5 A is a profile part for the light-emitting device shown in Fig. 4 B cut.
Fig. 5 B is comparable to the profile of the conventional light-emitting device of Fig. 5 A.
Fig. 6 A is the plane graph of the light-emitting device observing the 4th embodiment from light radiation side.
Fig. 6 B is the profile of the light-emitting device along the 6b-6b line in Fig. 6 A.
Fig. 6 C is the back view of the light-emitting device shown in Fig. 6 A.
Fig. 7 is the axonometric chart that the light-emitting device representing and possessing the 5th embodiment is used as the ligthing paraphernalia of light source.
Fig. 8 is the front elevation observing the ligthing paraphernalia shown in Fig. 7 from light radiation side.
Fig. 9 is the profile of the ligthing paraphernalia shown in Fig. 7.
Figure 10 is the exploded perspective view of the ligthing paraphernalia shown in Fig. 7.
Figure 11 is the front elevation observing the light-emitting device shown in Fig. 7 from light radiation side.
Figure 12 is the back view of the light-emitting device shown in Figure 11.
Figure 13 is the front elevation installing the state before LED chip on the light-emitting device shown in Figure 11.
Figure 14 is the profile of the light-emitting device along the F8-F8 line in Figure 11.
Figure 15 is the plane graph of the arrangement of the LED chip of the light-emitting device shown in Figure 11.
Figure 16 be the light-emitting device representing Figure 15 right side metal component relative to back side metal component volume ratio with absolutely The figure of the relation of deflection produced by edge matrix.
3: member for mount 4: concave mirror
5: mirror supporting member 5a: base portion
5b: support 5c: opening edge
5d: cable aperture 10: light-emitting device
11: the surface of insulating body 11A: insulating body
Back side 11C: the installing hole of 11B: insulating body
11D: recess 12: right side metal component
12a, 12b, 12c, 12g, 12p: weld pad 12d: band-like portions
12e: rib 12f, 12q: power supply section
12g1: corner 12g2: top
12g3: bottom 12g4: tapered portion
12r: power supply terminal 13: semiconductor light-emitting elements
14: back side metal component 14a, 14b, 14c: block
14C: fixed part 14D: screw reach through hole
15: containment member 16: frame component
17: die-bond material 18: containment member
20,100: ligthing paraphernalia 21: housing
21a: demarcation strip 22: ignition device
23: reflector 23a: light introducing port
23b: reflecting surface 24: power supply terminal platform
25: escutcheon 25a: outer cover component
26: support member 31: fin
32: base 32a: link hole
32c: fixing hole 33: radiating fin
34: connecting piece 35: heated parts
35a: hide groove 35b: heating surface
36: thermally-conductive sheet 41: concave mirror component
41a: edge 41b: seat portion
41c: otch 42: screw
45: pressure mirror part 45a: installation sheet portion
45b: patch portion 45c: front-end edge
111: substrate 120: region
131:LED chip 131a: device substrate
131b: semiconductor light emitting layer 131c: element electrode
A: illuminating part C: edge part
H: providing holes P: central part
S: interval W: closing line
X: ceiling
Detailed description of the invention
The light-emitting device of one embodiment has insulating body, right side metal component, semiconductor light-emitting elements and back-side gold Metal elements.Insulating body is ceramic.Right side metal component is split and is configured at the surface of insulating body.Semiconductor light-emitting elements It is installed in right side metal component.Back side metal component is formed at insulation with the thickness identical or thinner with right side metal component The back side of matrix.The volume of back side metal component and the volume of right side metal component are in a ratio of more than 50%.
Insulating body, right side metal component and back side metal component constitute substrate.As substrate, there is DCB(Direct Copper Bonding) substrate, directly weld aluminum (Direct Brazing Aluminum, DBA) substrate, active metal bit copper (Active Metal Brazed Copper, AMC) substrate etc..DCB substrate is by direct for the copper coin that becomes back side metal component It is engaged in the insulating body of ceramic and is formed.DBA substrate is that sealing-in becomes back metal structure on the insulating body of ceramic The aluminium sheet of part and formed.AMC substrate is that sealing-in is formed as the copper coin of back side metal component on the insulating body of ceramic.
Insulating body is for configuring the structure as the semiconductor light-emitting elements of light source such as light emitting diode (LED) chip Part, it is allowed to use by aluminium nitride (AlN), silicon nitride (SiN), aluminium oxide (Al2O3) and with aluminium oxide (Al2O3) or zirconium oxide (ZrO2) it is the sintered material etc. that manufactures of the compound of main constituent.The shape of insulating body is to use to meet required luminous intensity distribution All shapes of characteristic, such as square or rectangular, hexagon, eight limits that four clipped corners (cut) of tetragon are made The face mould block polygon-shaped or circular or oval, that make multiple LED chip be formed with fixed interval arrangement of shape etc. Or make the wire module that LED chip formed in the upper arrangement of line (line) of strip (module).
In this specification, the face of the insulating body of side installation LED chip and light radiated is referred to as " table ", should The opposition side of " table " is referred to as " back of the body ".
The right side metal component formed on the surface of insulating body forms Wiring pattern.As semiconductor light-emitting elements LED chip is equipped on this Wiring pattern.The manufacture method of insulating body and the installation method of LED chip there is no limit especially Fixed.When forming the right side metal component of set pattern on insulating body, utilize metal die, from piece of metal component Stamp out the structure remained the electric bridge (bridge) that set pattern and each part (parts) link Part, thereby carrys out first to prepare this secondary member.After this secondary member is engaged in the insulating body of ceramic, by by electricity The part that need not of bridge etc. is excised and is obtained right side metal component.Or, piece of metal component is engaged in ceramic Pattern after insulating body, set by etching (etching) one-tenth.
As long as the material of the material excellent electric conductivity of right side metal component, then allow to use copper, copper alloy, aluminum, aluminum to close The all materials such as gold.The arrangement of right side metal component is not limited, can by these metals on insulating body partly or Overall alignment becomes has matrix (matrix) shape of fixed interval, or possess permanent order regularly and partly or overall It is configured to zigzag, radial, helical form etc., or random (random) configuration.
In addition to being made up of LED chip, by semiconductor laser (laser), organic electroluminescent (Electroluminescence, EL) etc. as the light-emitting component of light source used also as semiconductor light-emitting elements.Semiconductor light emitting Element is to select necessary number according to the purposes illuminated, i.e. multiple semiconductor light-emitting elements both can be arranged on 1 front On hardware, it is also possible to only 1 semiconductor light-emitting elements is arranged in 1 right side metal component.Semiconductor light-emitting elements It is that the purposes according to ligthing paraphernalia sets the color becoming light source, i.e. when being configured to radiate white light, then by monochromatic structure Become, or the combination color combined by the multiple color such as redness, blueness, green, yellow is constituted.
The back side metal component formed on the back side of insulating body is with the thickness identical or thinner with right side metal component Spend and formed, for fixing light-emitting device on the radiating component of housing or fin etc..Back side metal component does not possesses Electricity connection function, but constitute to play heat sinking function.Therefore, available silver, copper, copper alloy, aluminum, aluminium alloy etc. are led All metals of hot excellence are used as back side metal component.The back side metal component formed by these metals considers thermal diffusivity And be integrally successively formed as flat board.Back side metal component is not necessarily required to all integrally be continuously formed, it is also possible to partial cut Or it is divided into polylith.
Right side metal component and back side metal component are created as the metal of thin sheet material (sheet) shape, and by envelope Connect and be engaged in the insulating body of ceramic.Can also replace sealing-in, and be engaged by diffusion or eutectic engages and directly makes gold The sheet interface belonged to is engaged in the insulating body of ceramic.When Copper Foil diffusion is engaged in pottery, by by after oxidation Copper Foil is configured on the insulating body of ceramic and engages so that about about 1050 DEG C carry out heating pressurization.And, front metal Component and back side metal component can also be the thin metal levels formed by plating and etching.
Back side metal component relative to the volume ratio of right side metal component, both can using the volume of right side metal component as Benchmark adjusts the gauge of back side metal component and makes volume ratio is more than 50%, it is also possible to by the body of back side metal component The long-pending gauge adjusting right side metal component as benchmark, so that back side metal component is relative to the body of right side metal component Long-pending ratio is more than 50%.And, the adjustment of the volume ratio of right side metal component and back side metal component, both can make thickness gauge Very little identical and by change surface area set volume ratio, it is possible to so that surface area identical and by change gauge set Volume ratio.And then, the adjustment of the volume ratio of right side metal component and back side metal component, it is also possible to by combination (front gold Metal elements and back side metal component) both gauge or surface area set.And, by back side metal component relative to The volume ratio of right side metal component is set to more than 50%, and the area of back side metal component is more than the area of right side metal component.
The volume of right side metal component both can only be set by the right side metal component being provided with semiconductor light-emitting elements Fixed, it is also possible to the portion of terminal not installing semiconductor light-emitting elements or the framework (frame) that insulating body is strengthened will to be constituted Component be included and be set.Similarly, the volume of back side metal component both can by with right side metal component pair The component of the scope answered sets, it is also possible to will constitute the component of portion of terminal or constitutes the component bag of insulating body reinforcement framework Include and be set interior.Constitute the component of the portion of terminal not installing semiconductor light-emitting elements or constitute insulating body reinforcement frame The component of frame, both can be made up of the material identical with right side metal component or back side metal component, it is also possible to by different materials Matter is constituted.
Back side metal component is preferably close in the range of 50% to 120% relative to the volume ratio of right side metal component 100%.If volume ratio is less than 50%, then the difference of the thermal capacity of the right side metal component caused because of volume and back side metal component will Become big, thus be difficult to prevent the warpage of insulating body.If volume ratio is more than 120%, then by right side metal component and back-side gold Metal elements is engaged in temperature height (about 1050 DEG C) during insulating body, therefore can be with central part to table side after slow cooling to room temperature Protrude mode and produce warpage.Back side metal component is difficult to be close to relative to the position that light-emitting device is fixed.
Right side metal component is with set by the pattern in accordance with the configuration of semiconductor light-emitting elements.The face of back side metal component The long-pending area more than right side metal component, therefore the thickness of back side metal component is thinner than the thickness of right side metal component.By making The thickness of right side metal component is more than the thickness of back side metal component, and makes the volume of right side metal component become and back metal The degree that the volume of component is identical.By reducing the right side metal component and back side metal component produced with variations in temperature The difference expanded and shrink, with the warpage suppressing insulating body to produce.
A part for right side metal component includes the band-like portions of the strip of the peripheral part along insulating body.Front metal The band-like portions of component play a role as the reinforced frame of the peripheral part of insulating body, therefore prevent the entirety of substrate from sticking up Song, and prevent from producing crack at peripheral part.These band-like portions are to avoid terminal part set on the peripheral part of substrate and set Put.That is, when substrate is rectangle and terminal configure along the minor face of substrate time, band-like portions are arranged to, along avoiding end Son long limit and be respectively symmetrically.Do not expand substrate, but effectively utilize the dead space (dead space) of the table side of substrate, with Strengthen substrate.Band-like portions both can substrate whole around be continuously formed, it is possible to so that local be intermittently formed.Front As long as the band-like portions of hardware carry out function as reinforced frame.Therefore, these band-like portions both can be used for The right side metal component of semiconductor light-emitting elements is installed simultaneously, identical metal material is formed, it is also possible in other operations In formed by the metal of other materials.
And, in light-emitting device, insulated substrate has the hole that screw is fixed, and has bag around the hole on surface The rib being contained in a part for right side metal component.A part for right side metal component is arranged in hole as rib Around, therefore this rib has played the effect of reinforced frame in hole, i.e. prevent crack from producing when fastening screw.Rib Both jointlessly can be formed continuously around hole, it is also possible to local is intermittently formed.And, rib be formed for As electrode portion, the right side metal component of semiconductor light-emitting elements it is installed or constitutes the reinforcement of peripheral part as band-like portions While the right side metal component of framework, identical metal material formed, or by other component institutes in other operations Formed.
The light-emitting device of another embodiment includes the insulating body of ceramic, right side metal component, back side metal component And semiconductor light-emitting elements.Insulating body is to installing the surface of semiconductor light-emitting elements and being the back side of opposition side with this surface It is defined.Right side metal component directly engages or is packaged on the surface of insulating body with set pattern.Front metal Component comprises weld pad (pad) and power supply section.Weld pad supports at least 1 semiconductor light-emitting elements.Power supply section possesses portion of terminal, should Portion of terminal is configured at the peripheral part of insulating body, and semiconductor light-emitting elements supplies the electric power distributed.Back side metal component one Possess the fixed part more extended along the back side of insulating body than the outer peripheral edge of insulating body body, and directly engage or be packaged on The back side of insulating body.Fixed part is formed with screw penetrating part.Insulating body, right side metal component and back side metal component are constituted Substrate.Semiconductor light-emitting elements is installed on the weld pad of right side metal component, and is electrically connected at power supply section.
Power supply section is formed as the circumference of the insulating body from pottery etc. towards tab (tab) protruding outside.Or, The patent part being made by hole or groove is set in a part for insulating body, and forms power supply in the way of blocking this patent part Portion.
When the edge of back side metal component highlights from the perimembranous of the insulating body of ceramic, formed in this edge and be used as admittedly Determine the screw penetrating part in portion.Region in addition to fixed part is formed as with insulating body substantially by the edge of back side metal component Identical size, i.e. only fixed part highlights from the perimembranous of insulating body.Cut the perimembranous of insulating body by being exposed to and make Recess back side metal component edge be used as fixed part.It is fixing flat board that back side metal component is not limited to thickness. Back side metal component forms porose or slit (slit) corresponding to the pattern of right side metal component.That is, corresponding to front metal The Density Distribution of the pattern of component and form porose or otch.
Back side metal component is directly engaged or is packaged on the back side of insulating body by this light-emitting device, therefore can use not The back side metal component of thick tabular.The fixed part being integrated and being formed with screw penetrating part with back side metal component has base Plate is fixed at the sufficient intensity needed for the member for mount of fin etc..Fixed part is convex from the perimembranous of the insulating body of ceramic Go out, screw therefore need not be made to pass insulating body and just substrate can be fixed on member for mount.Fixed part is and back metal structure Part is integrated, and there is no need for other parts of fixed part.Therefore, parts count will not be increased and substrate can be fixed at Member for mount, and will not coping screw fastening and cause insulating body occur breakage.
Above light-emitting device is not only useful as using or industry from the facility of the office that ceiling illuminates totally etc The light source of the relatively large ligthing paraphernalia of business, and it is also suitable the small lighting device of the ligthing paraphernalia etc. being used as ordinary residence Tool, the light source of ligthing paraphernalia of lamp (lamp) form with lamp holder.The ligthing paraphernalia of the business such as office or facility can be by Multiple light-emitting devices combine and are fabricated to strip or big flat board (panel) shape.Compared with business ligthing paraphernalia, The ligthing paraphernalia of small-sized ordinary residence can make of 1 light-emitting device.
Ligthing paraphernalia possesses: the light-emitting device becoming light source, the housing with heat sinking function and for making light-emitting device The lamp circuit of LED chip lighting or power circuit.Light-emitting device makes back side metal component contact and is fixed on housing institute The thermal transfer surface prepared.Overleaf between hardware and thermal transfer surface, fill for promote heat transfer paste (paste) or Silicone grease.Housing is by the material manufacture of excellent thermal conductivity, i.e. by steel plate, rustless steel (stainless steel), aluminum Deng metal or there is the synthetic resin i.e. polybutylene terephthalate (PBT) of thermostability, light resistance and electrical insulating property (polybutylene terephthalate, PBT) etc. manufacture.Alternating voltage 100V is changed by lamp circuit and power circuit Become DC voltage 24V and supply to LED chip.Lamp circuit and power circuit are arranged in housing, or separate with housing And arrange.And, lamp circuit also can have the dimming function making brightness or illuminant color change.
Light-emitting device makes the thickness of back side metal component thinner than the thickness of right side metal component, and by right side metal component It is set to more than 50% relative to the volume ratio of back side metal component.Thus, light-emitting device suppresses because of right side metal component and back-side gold The difference in areas of metal elements and cause the warpage produced on insulating body in the fabrication process.And, if this light-emitting device makes the back of the body The area that lays of face hardware is more than the area of right side metal component, then can reduce insulating body in the fabrication process further The warpage of upper generation.
The band-like portions formed on the peripheral part of insulating body are included in a part for right side metal component, band-like portions As the reinforced frame of peripheral part of insulating body and function, therefore prevent the warpage of insulating body, and prevent outside Perimembranous produces crack.Rib set by the surrounding of the installing hole of fastened by screw is included in right side metal component, rib The function as the reinforced frame of installing hole, therefore prevents from producing crack from installing hole.
The light-emitting device of another form is made screw pass and directly engages or be engaged in the insulating body back side by sealing-in The screw penetrating part of fixed part that forms of back side metal component, thus substrate is fixed on member for mount.Luminous Device is achieved without increasing parts count and substrate can being fixed at the structure of member for mount.Even if the fastening of screw is relatively strong, The insulating body of ceramic also will not occur breakage.And, this light-emitting device there is the part as back side metal component and The fixed part formed.From without increasing parts count, when being fixed at member for mount, need not worry to make the insulation of ceramic There is breakage in matrix.
Hereinafter, light-emitting device and ligthing paraphernalia to the 1st to the 5th embodiment illustrate.
The structure of the light-emitting device 10 of the 1st embodiment is illustrated.Light-emitting device 10 shown in Figure 1A is at DCB base Light emitting diode as semiconductor light-emitting elements 13 (LED) is installed on plate and constitutes.Light-emitting device 10 as shown in Figure 1B, wraps Include: the insulating body 11 of ceramic, the right side metal component made of copper 12 being formed on the surface 11A of insulating body 11, by LED The semiconductor light-emitting elements 13 constituted and be installed in right side metal component 12 and the back side being formed at insulating body 11 Back side metal component made of copper 14 on 11B.Substrate 111 is by insulating body 11, right side metal component 12 and back side metal component 14 are constituted.
Insulating body 11 is ceramic to arrange semiconductor light-emitting elements 13, for nitridation aluminum in this example Rectangular flat board.Right side metal component 12 is formed at the surface of insulating body 11 to constitute Wiring pattern.At Figure 1A In, in the corner of insulating body 11, it is formed and fixes light-emitting device on the housing 21 at the ligthing paraphernalia 20 shown in Fig. 2 A The installing hole 11C of the fastened by screw of 10.
Right side metal component 12 is divided into 3 parts on the surface of the insulating body 11 of ceramic and configures, and along insulation The length direction of matrix 11 and arrange.In figure ia, weld pad 12a, 12b, 12c of pattern of right side metal component 12 are constituted absolutely The middle section of edge matrix 11 has the interval S for being electrically insulated and configures, and by scolding tin with the side shown in Figure 1B Formula is engaged in the surface of insulating body 11.The plated surface of this each weld pad 12a, 12b, 12c is covered with for antioxidative nickel (Ni).Also Nickel can be replaced and plating gold (Au) or silver (Ag) etc..These metals are to cover the surface of weld pad 12a, 12b, 12c and implement plating Apply, the most effectively reflect the light from semiconductor light-emitting elements 13 radiation.The loss of the light owing to radiating is reduced, therefore The luminous efficiency of light-emitting device 10 improves.The reflectance of the copper of non-plating is about 60%, and on the other hand, silver-plated reflectance is about 95%。
Surface mount semiconductor light-emitting component 13 in right side metal component 12.Semiconductor light-emitting elements 13 is by LED chip Constitute.Prepare multiple semiconductor light-emitting elements 13 with same performance.In the present embodiment, each semiconductor light-emitting elements 13 It is to be made up of the blue LED die of high brightness, high output.The semiconductor light-emitting elements 13 of multiple bluenesss is at each weld pad 12a, 12b On, respectively it is provided with 2 to have the matrix arrangement at the interval of approximate equality.In this example, substrate is DCB substrate, therefore Semiconductor light-emitting elements 13 is to use about about 1mm and the jumbo LED chip of 1.1W～1.5W on one side.
In right side metal component 12, each semiconductor light-emitting elements 13 of installation is as shown in Figure 1B, by transparent silicone tree The containment member 15 being mixed with yellow fluorophor in fat is covered.Excite yellow glimmering by blue semiconductor light-emitting elements 13 Body of light, to send sodium yellow.The sodium yellow that this light-emitting device 10 makes yellow fluorophor send sends with semiconductor light-emitting elements 13 Blue light mixing, to send white light.Semiconductor light-emitting elements 13 is company by closing line (bonding wire) W of gold thread Being connected to each weld pad 12a, 12b, 4 each 2 ground of each semiconductor light-emitting elements 13 are connected in series.
And, the back side metal component made of copper 14 that the back side 11B of the insulating body 11 of ceramic is formed is than insulation base The thickness of slab of the right side metal component made of copper 12 formed on the surface of body 11 is thinner.This back side metal component 14 is as shown in Figure 1 C Integrally continuous print flat board, and utilize scolding tin to be engaged in the back side 11B of insulating body 11.
In the light-emitting device 10 with DCB substrate, relative to the volume of right side metal component 12, by back side metal component The volume of 14 is fabricated to more than 50%.In the present embodiment, insulating body 11, right side metal component 12, back side metal component 14 It is configured to following size and volume.
In figure ia, the weld pad 12a shown in left side makes thickness of slab constitute about 0.25mm, area and is about 40mm2, the weldering of central authorities Pad 12b makes thickness of slab be set to about 0.25mm in the same manner as left side, area constitutes about 60mm2, the weld pad 12c on right side makes thickness of slab be set to About 0.25mm, area constitute about 20mm2, i.e. the thickness of slab of right side metal component 12 is about 0.25mm, makes the gross area constitute and is about 120mm2.And, the thickness of slab of back side metal component 14 is set to the about 0.2mm thinner than the thickness of slab of right side metal component 12, makes Area constitutes about 140mm2.Insulating body 11 is to be the copper coin than back side metal component 14 by thickness of slab about 0.25mm, area Bigger about 322mm2Aluminium nitride constitute, and as shown in Figure 1 C, to connect in the way of blank (blank) region of periphery residual Conjunction has back side metal component 14.
The volume of right side metal component 12 based on above-mentioned size is about 30mm3, the volume of back side metal component 14 is about 28mm3.Back side metal component 14 is about 93% relative to the volume ratio of right side metal component 12, be configured to as target 50% with Go up and close to 100%.
In the present embodiment, the thickness of slab of right side metal component 12 is fixed, and made the plate of back side metal component 14 Thickness is formed as being thinner than the thickness of slab of right side metal component 12, i.e. by adjusting thickness of slab and the surface area of back side metal component 14, with Back side metal component 14 is formed close to the mode of 100% relative to the volume ratio of right side metal component 12, to control (control) warpage of insulating body 11.
So, light-emitting device 10 is constituted in the following manner, i.e. by by right side metal component 12 and back side metal component 14 are set to identical material i.e. copper coin, thus eliminate the difference of the coefficient of thermal expansion on the two sides of the insulating body 11 of ceramic, and pass through Back side metal component 14 is set to about 93% relative to the volume ratio of right side metal component 12, thus does one's utmost to eliminate insulating body 11 The difference of thermal capacity on two sides.Its result, light-emitting device 10 suppresses insulating body 11 because of warpage produced by heat.
According to this light-emitting device 10, in the fabrication process, (die bonding) is engaged by semiconductor light emitting by chip When element 13 is installed on right side metal component 12, even if being exposed under the hot environment of about about 300 DEG C, substrate is also difficult to occur Warpage.And, the problem that operability is deteriorated in the fabrication process is also improved.
There is DCB substrate and profile be rectangle and in laminal light-emitting device 10 as in figure 2 it is shown, be loaded into illumination apparatus In the housing 21 of tool 20.This ligthing paraphernalia 20 is as the Down lamp (down light) of the little shape of light source using light-emitting device 10, by Above-mentioned light-emitting device 10, the housing 21 of fixing light-emitting device 10 and make the ignition device 22 of light-emitting device 10 lighting constitute.
Housing 21 as shown in Figure 2 A, is made for aluminium diecasting (aluminum die cast), is to have opening at both ends Cylindrical shape.The inside further below of housing 21 main part in fig. 2 is provided integrally with dividing for mounting light emitting device 10 Dividing plate 21a.Demarcation strip 21a is the supporting part for light-emitting device 10 is fixed on housing 21, and in fig. 2, at following table mask There is the tabular surface becoming thermal transfer surface.
Light-emitting device 10 is utilized through the screw of the installing hole 11C set everywhere of the surrounding of insulating body 11 and is anchored on Demarcation strip 21a, thus make back side metal component 14 made of copper positively be close on the tabular surface of demarcation strip 21a of aluminum Fixed under state.Owing to the substrate of light-emitting device 10 does not occurs warpage, i.e. between insulating body 11 and demarcation strip 21a Not producing gap, therefore when spiral shell is solid, insulating body 11 will not produce crack.Owing to back side metal component 14 is close to demarcation strip 21a, therefore heat produced by semiconductor light-emitting elements 13 will efficiency distributes well to separation by back side metal component 14 Plate 21a.
In this light-emitting device 10, right side metal component 12 is the most divided.Therefore, even if demarcation strip 21a's is flat Smooth degree is poor, and in the case of insulating body 11 shifting ground is fixing, owing to can flexibly follow, therefore, it is difficult to produce crack, and Can fix closely.
Reflector 23 as shown in Figure 2 A, is arranged on demarcation strip 21a the face side of the light-emitting device 10 fixed, and such as figure Each semiconductor light-emitting elements 13 is surrounded shown in 2B.Reflector 23 is by the white with light resistance, thermostability and electrical insulating property Synthetic resin constitute, be such as made up of polybutylene terephthalate (PBT) (PBT) etc..Reflector 23 is provided integrally with circle Light introducing port 23a and reflecting surface 23b, described smooth introducing port 23a have the upper peace of each weld pad 12a, 12b surrounding light-emitting device 10 The diameter of 4 semiconductor light-emitting elements 13 of dress, described reflecting surface 23b is thrown by the rotation surrounding these semiconductor light-emitting elements 13 Object plane is formed as so-called " pottery alms bowl shape ".The illuminating part A of ligthing paraphernalia 20 is with the optical axis x-x of light-emitting device 10 and reflector 23 Mode that optical axis y-y is substantially uniform and constitute.
Ignition device 22 comprises and constitutes required point to make the 4 of light-emitting device 10 semiconductor light-emitting elements 13 lightings Circuit for lamp and the circuit component of power circuit, be converted into the direct current of 24V by the alternating voltage of the 100V obtained from source power supply Voltage, and fixing DC current is supplied to each semiconductor light-emitting elements 13.This ignition device 22 is contained to housing 21 Internal.In the end releasing the housing 21 that side is opposition side with light, prepare for ignition device 22 is supplied from source power supply The power supply terminal platform 24 of electric power.As shown in Fig. 2 A and Fig. 2 B, escutcheon 25 is adjacent to the illuminating part A of housing 21, and by Transparent outer housing (cover) component 25a is covered.It is made up of leaf spring for housing 21 being held in the support member 26 of ceiling X.
On the ceiling X becoming the face of being set, the ligthing paraphernalia 20 of 1 this Down lamp shape is set, or, used by feeding Cable (cable) makes this ligthing paraphernalia 20 multiple be connected to each other and arrange.By in Fig. 2 A with shown in some chain lines in variola The power line joining cloth in being formed as providing holes H of circle on plate X is connected to power supply terminal platform 24.Support member 26 is made inward with hands Bending, after together its front end and housing 21 are inserted providing holes H, decontrols hands from support member 26.Support member 26 passes through self Elastic and restore and be crimped on the inner face of providing holes H, therefore housing 21 remains the shape making escutcheon 25 be connected to ceiling X State.In this case, the otch of providing holes H is covered by escutcheon 25.
When ligthing paraphernalia 20 is carried out lighting, from the light of each semiconductor light-emitting elements 13 outgoing by the reflection of reflector 23 Face 23b is reflected, the diffusion radiation downward in conical shaped, to carry out point-like (spot) illumination.Now, from quasiconductor Light-emitting component 13 radiation light by platings such as nickel, silver, gold on the surface of each weld pad 12a, 12b, 12c of right side metal component 12 Metal reflected.And, insulating body 11 is made up of the pottery of white, and thus, light also can be entered by the surface of insulating body 11 Row reflection, therefore ligthing paraphernalia 20 can carry out the illumination that light loss is few.
And, right side metal component 12 and back side metal component 14 are that the copper of excellent thermal conductivity becomes, insulating body 11 Also it is that the pottery with heat conductivity is made, and then, housing 21 is also to be formed by the aluminum of excellent thermal conductivity.Each semiconductor light emitting element Produced by part 13, heat is transferred to back side metal component 14 from right side metal component 12 by insulating body 11, then via separation The thermal transfer surface of plate 21a and be transferred to housing 21, and distribute towards the outside of ligthing paraphernalia 20.That is, heat is from the big shell of surface area The sidewall of body 21 effectively dissipates to outside.
And, weld pad 12a, 12b, the 12c of the right side metal component 12 being provided with semiconductor light-emitting elements 13 is along absolutely The length direction of edge matrix 11 and configure.The length side of the hot substrate big along thermal capacity produced by semiconductor light-emitting elements 13 To and transmit, thus, be more effectively carried out heat radiation.And, light-emitting device 10 is to be configured to the state without warpage, therefore makes the back of the body Fixed under the state of the demarcation strip 21a that housing 21 is positively close to by face hardware 14.Due to from back side metal component 14 is few towards the heat transfer loss of demarcation strip 21a, therefore can effectively dispel the heat.
Ligthing paraphernalia 20, by above-mentioned thermolysis, suppresses the decline of the light conversion efficiency of each semiconductor light-emitting elements 13, And carry out the illumination that illumination is bright.And, the life-span of semiconductor light-emitting elements 13 is also extended.
The light-emitting device 10 of the 1st embodiment is configured to, and makes back side metal component 14 relative to right side metal component 12 Volume ratio is about 93%, and does one's utmost to eliminate the difference of the thermal capacity on the two sides of insulating body 11, the most positively prevents the exhausted of ceramic Warpage is there is in edge matrix 11 because of heat.Now, by making right side metal component 12 with back side metal component 14 for identical material i.e. Copper becomes, and eliminates the difference of the coefficient of thermal expansion on the two sides of insulating body 11, therefore the insulating body 11 of light-emitting device 10 be difficult to because of Heat and there is warpage.
And then, make the thickness of back side metal component 14 be formed as being thinner than the thickness of right side metal component 12, i.e. with front gold Adjust thickness and the surface area of back side metal component 14 on the basis of the thickness of metal elements 12, and make the body of back side metal component 14 The ratio of the long-pending volume relative to right side metal component 12, close to 100%, controls the warpage of insulating body 11 with this.Due to without multiple Miscellaneous Wiring pattern, and only utilize the change in size of the simple back side metal component 14 constituting heat transmission flat board to control System, is thus susceptible to carry out the adjustment of volume ratio, provides easy access to required volume ratio, i.e. the manufacturing of this light-emitting device 10 is excellent Different.
Even if light-emitting device 10 is exposed to hot environment in the fabrication process, insulating body 11 is also difficult to occur warpage, really Prevent insulating body 11 from because of heat, warpage occurring on the spot.And, light-emitting device 10 is improved, thus is prone in the fabrication process Operation.Owing to the substrate of light-emitting device 10 will not occur warpage, thus without at the back side metal component 14 of substrate and demarcation strip Gap is formed between 21a.When spiral shell is solid, insulating body 11 is difficult to produce crack.It is additionally, since back side metal component 14 be and divide Dividing plate 21a is close to, and therefore the heat of semiconductor light-emitting elements 13 is effectively distributed.Its result, the illumination of ligthing paraphernalia 20 brightens.
The light-emitting device 10 of the 2nd embodiment is described with reference to Fig. 3 A, Fig. 3 B, Fig. 3 C.For having and the 1st embodiment The structure of the identical function of light-emitting device 10, mark the symbol identical with the 1st embodiment in the various figures, and with reference to the 1st reality Execute the record in mode.In this light-emitting device 10, back side metal component 14 is divided as shown in Fig. 3 B and Fig. 3 C.That is, as Shown in Fig. 3 B and Fig. 3 C, back side metal component 14 is divided at 3 at the back side of the insulating body 11 of ceramic and configures, and edge The length direction of substrate and be arranged.As shown in Fig. 3 B and Fig. 3 C, back side metal component 14 is corresponding to being arranged in insulation The pattern of the right side metal component 12 on the surface of matrix 11, constitute each block (block) 14a of back side metal component 14,14b, 14c alongst and with interval S-phase adjoins at the middle section of insulating body 11, and is engaged in insulation base by scolding tin Body 11.
The interval S of each block 14a, 14b, 14c is to avoid the position corresponding with semiconductor light-emitting elements 13 and configure.By This, the heat produced from semiconductor light-emitting elements 13 is transferred to be positioned at the back of the body of the opposition side of insulating body 11 with short thermally conductive pathways Face hardware 14a, 14b, 14c.Even if splitting back side metal component 14, radiating efficiency also will not change.Separately Outward, when being spaced the positive back side that S is positioned at semiconductor light-emitting elements 13, space can be formed at the dorsal part of semiconductor light-emitting elements 13, Therefore thermal resistance becomes radiating efficiency variation greatly.Especially, if the insulating body 11 low with heat conductivity is combined, then semiconductor light emitting The heat of element 13 will be difficult in insulating body 11 diffusion, and therefore radiating efficiency can become extreme difference.
Light-emitting device 10 is respectively provided with 2 semiconductor light-emitting elements 13 on weld pad 12a, 12b, by adding up to 4 quasiconductors Light-emitting component 13 constitutes illuminating part A.1 semiconductor light-emitting elements can also be installed, by joining for 1 right side metal component Put more semiconductor light-emitting elements and constitute the illuminating part A realizing high output.
The light-emitting device 10 of the 3rd embodiment is described with reference to Fig. 4 A, Fig. 4 B and Fig. 5.For having and the 1st embodiment party The structure of the function that the light-emitting device 10 of formula is identical, marks identical symbol and in the various figures with reference to saying in the 1st embodiment Bright, and omit explanation herein.In the 3rd embodiment, as shown in Figure 4 A, multiple weld pad 12g of right side metal component are become It is arranged in the surface of the rectangular insulating body 11 of ceramic.This weld pad 12g joins along the length direction of insulating body 11 It is equipped with 5 row, and on the direction intersected with this length direction, is configured with 4 row, thus in the most equally spaced rectangular and configure Sum 20 weld pad 12g, these weld pads 12g are had to be engaged in the surface of insulating body 11 by scolding tin.On each weld pad 12g, The plating nickel (Ni) for anti-oxidation as described above.Nickel can also be replaced and plating gold (Au) or silver (Ag) etc..
Each weld pad 12g arranged in arrays is formed as shown in Figure 4 A, as overlooking square edge (edge) portion Corner (corner) 12g1 divided becomes round and smooth chamfering (chamfer), thus is integrally formed into substantially octagon.As Fig. 4 B with And shown in Fig. 5 A, weld pad 12g has generally trapezoidal on the thickness direction of insulating body 11, i.e. from top 12g2 towards bottom Tapered portion (taper) 12g4 of 12g3 extension, and utilize scolding tin to make bottom 12g3 be engaged in the insulating body 11 of ceramic Surface.
1 semiconductor light-emitting elements 13 is installed in the substantial middle part of the top 12g2 of each weld pad 12g.This embodiment party It is that rectangular being arranged with adds up to 20 semiconductor light-emitting elements 13 that the light-emitting device 10 of formula possesses on the surface of insulating body 11 Rectangular DCB substrate.The weld pad 12g made of copper that DCB substrate is formed as than forming Wiring pattern is thicker.Therefore, at Fig. 5 A In do not configure the groove that the region 120 of weld pad 12g becomes the deepest.As shown in Figure 5 B, if region 120 is rectangular section Groove, then the part from the light of semiconductor light-emitting elements 13 radiation will be imported in this groove.
On the other hand, the weld pad 12g of the light-emitting device 10 of the 3rd embodiment as shown in Figure 5A as be formed with taper at complete cycle Portion 12g4, therefore, a part for light, as shown in arrow in Fig. 5 A, is reflexed in Fig. 5 A light radiation side upward by tapered portion 12g4 Xiang Zhong.It is released in semiconductor light-emitting elements 13 will not be imported into groove towards the light that insulating body 11 side is radiated.Luminous dress Put the luminous efficiency of 10 to be improved.
And, weld pad 12g makes corner 12g1 be formed as round and smooth chamfering, therefore without acute angle, it is difficult to electrolysis is concentrated.When in order to Antioxidation and time the surface of weld pad 12g is carried out plating, due to acerous, therefore, the metal of nickel or silver etc. the migration caused (migration) phenomenon is able to prevent.The decline of the insulation resistance between weld pad 12g is suppressed, thus provides safety Light-emitting device 10.Being additionally, since and make corner 12g1 be formed as round and smooth chamfering, the therefore adjacent distance between weld pad 12g becomes Long, can positively realize being electrically insulated.
In the light-emitting device 10 of the 3rd embodiment, weld pad 12g made of copper utilizes scolding tin to be engaged in insulating body 11. Weld pad 12g can also be consisted of etching.Now, as long as the layers of copper that the feature of DCB substrate is the thickest being etched, etching face Just the chevron shown in Fig. 5 A can be become, thus automatically in complete cycle formation tapered portion 12g4 of weld pad 12g.By this tapered portion A part for light is reflected by 12g4.
The light-emitting device 10 of the 4th embodiment is described with reference to Fig. 6 A, Fig. 6 B and Fig. 6 C.Implement with the 1st for having The structure of the function that the light-emitting device 10 of mode is identical, marks identical symbol in the various figures, and with reference in the 1st embodiment Corresponding record, and omit explanation herein.
The difference of the light-emitting device 10 of light-emitting device the 10 and the 1st embodiment of the 4th embodiment is front gold The structure of metal elements 12.Right side metal component 12 includes weld pad 12a, 12b, 12c, band-like portions 12d, rib 12e and power supply Portion 12f.By arranging band-like portions 12d and rib 12e, make the intensity of light-emitting device 10 be improved, thus prevent base The warpage of plate.
As shown in Figure 6A, a part for right side metal component 12 made of copper is as band for the light-emitting device 10 of the 4th embodiment Shape part 12d and be located at the peripheral part of insulating body 11.Band-like portions 12d are in weld pad 12a, 12b, 12c each common phase To limit on, i.e. the top edge of the insulating body 11 being positioned in Fig. 6 A and on the lower edge, its length across and each right side metal component 12a, 12b, 12c, and along the length direction of insulating body 11.Band-like portions 12d are to have with each weld pad 12a, 12b each other Between the same interval of the set interval S-phase being electrically insulated and configure, and be engaged in the table of insulating body 11 by scolding tin Face.On the surface of these each band-like portions 12d, the plating nickel (Ni) etc. also for antioxidation.
These band-like portions 12d play following effects by being located at the peripheral part of insulating body 11.Band-like portions 12d are edges The length direction of insulating body 11 and arrange, therefore will alleviate the warpage of substrate self.And, and when solid by pottery by spiral shell The insulating body 11 of system is when being fixed on housing 21 grade, and due to the warpage of housing side or the impact of the flatness etc. on surface, stress is easy Concentrate on the marginal portion of weld pad 12a, 12b of right side metal component 12, i.e. the marginal portion shown in arrow C in Fig. 6 A, Fig. 6 B And produce crack.
According to this example, by being set to band-like portions 12d of reinforced frame, make to concentrate in Fig. 6 A and Fig. 6 B The local stress of edge part C is dispersed.Thus be difficult to produce crack at the edge part C of weld pad 12a, 12b.
And, around the substrate that intensity is relatively weak, the especially periphery of substrate, play the effect of reinforced frame, also It is possible to prevent the generation in the crack of peripheral part.And, band-like portions 12d are to utilize the dead space on insulating body 11 to configure. Large substrates need not be added to arrange reinforced frame.
And, in this example, spiral shell installing hole 11C admittedly be formed around be included in right side metal component 12 Rib 12e in a part.That is, 4 spiral shells formed relative to the corner of insulating body 11 installing hole 11C admittedly, point Not in the way of surrounding the surrounding in hole, and rib 12e is configured to other adjacent right side metal component 12a, 12b, There is between 12c, 12d the interval being electrically insulated, and by scolding tin, this rib 12e is engaged in the table of insulating body 11 Face.On the surface of this each rib 12e, the most also it is plated with for antioxidative nickel (Ni) etc..
This rib 12e sets in the way of surrounding the surrounding of installing hole 11C, thus plays following effects.That is, rib 12e, when utilizing screw that insulating body 11 is fixed on housing etc., makes stress obtain dispersion to avoid it to concentrate on spiro-fixing part Position.The effect of the rib 12e performance reinforced frame that the surrounding of installing hole 11C is set, makes local apply answering to installing hole 11C Power is disperseed, and therefore prevents from producing crack at spiro-fixing part and periphery thereof.
The light-emitting device 10 of the 4th embodiment has the power supply section constituting pair of terminal portion on the surface of insulating body 11 12f.On the minor face of the insulating body 11 of rectangular ceramic, the power supply section 12f of generally square portion of terminal will be constituted Sky is opened the interval being electrically insulated and is configured between adjacent weld pad 12a, 12b, band-like portions 12d, rib 12e, and leads to Cross scolding tin and this power supply section 12f is engaged in the surface of insulating body 11.On the surface of this each power supply section 12f, also with front gold Other parts of metal elements 12 are similarly plated with for antioxidative nickel (Ni) etc..
Constitute band-like portions 12d of the reinforced frame of the peripheral part of substrate, constitute the reinforcement of the reinforced frame of installing hole 11C Portion 12e and the power supply section 12f constituting portion of terminal is as weld pad 12a, the 12b for installing semiconductor light-emitting elements 13 Ground, is made up of the copper of thickness of slab about 0.25mm.And, power supply section 12f is to be engaged by scolding tin with weld pad 12a, 12b simultaneously Surface in insulating body 11.
In these right side metal component 12, in the same manner as weld pad 12a, 12b, cover its surface and plating nickel, silver, gold etc. Metal.By making the luminous reflectance radiated towards insulating body 11 side from semiconductor light-emitting elements 13 radiate side, luminous effect to light Rate is improved.Insulating body 11 is added by band-like portions 12d being included in right side metal component 12 and rib 12e By force, therefore can the thickness of slab of thinning insulating body 11.The heat of semiconductor light-emitting elements 13 is able to efficiency and is transferred to back-side gold well Metal elements 14.
In the light-emitting device 10 of the 4th embodiment, constitute and comprise band-like portions 12d and the rib becoming reinforced frame The right side metal component 12 of 12e, therefore the peripheral part of insulating body 11 or the surrounding of installing hole are enhanced.Prevent insulating body 11 produce crack, and by effectively utilizing these reinforced frames, easily by back side metal component 14 relative to right side metal component The volume ratio of 12 is adjusted to more than 50%.Light-emitting device 10 utilizes simple structure and method to prevent the warpage of substrate self.
By increasing the area of right side metal component 12, make the back side metal component 14 body relative to right side metal component 12 Long-pending ratio, close to 1, the most easily prevents the warpage of the insulating body 11 caused because of the difference of volume.It is not provided with reinforced frame etc. when constituting Structure, and when the volume of right side metal component 12 is less than back side metal component 14, band-like portions 12d are set the most additionally Or rib 12e.When constituting the structure being not provided with reinforced frame etc., and the volume of right side metal component 12 is more than back metal structure During part 14, if adding band-like portions 12d or rib 12e, the cumulative volume of right side metal component 12 will become excessive.Now, As long as strengthening thickness or the laying area of back side metal component 14.If strengthening the laying area of back side metal component 14, Then the radiating effect of insulating body will improve.
The light-emitting device 10 of the 4th embodiment has the power supply section 12f constituting portion of terminal, and as shown in Figure 6 C, also strengthens The area of back side metal component 14.The thickness of slab of back side metal component 14 is to be about 0.2mm in a same manner as in the first embodiment.The back side Hardware 14 is about 95% relative to the volume ratio of right side metal component 12, close to 100%.Two sides due to insulating body 11 The difference of thermal capacity tails off, and therefore light-emitting device 10 easily prevents the warpage that insulating body 11 occurs because of heat.Sending out of 4th embodiment Electro-optical device 10 is provided with band-like portions 12d along the length direction of insulating body 11, and therefore the warpage of substrate diminishes.
The light-emitting device 10 of the 2nd embodiment to the 4th embodiment is used mapping illumination apparatus shown in 2A and Fig. 2 B The light-emitting device 10 of tool 20.
The ligthing paraphernalia 100 possessing the light-emitting device 10 of the 5th embodiment is described with reference to Fig. 7 to Figure 16.Fig. 7～Figure 10 Shown ligthing paraphernalia 100 is the spotlight (spotlight) with 2 light-emitting devices 10.This ligthing paraphernalia 100 includes 2 Light-emitting device 10, member for mount 3, concave mirror 4 and mirror supporting member 5.Light-emitting device 10 is chip on board (chip on Board, COB) type, and as shown in Figure 11～Figure 14, there is substrate 111, become the LED chip of multiple semiconductor light-emitting elements 131, the containment member 18 etc. of frame component 16 and light transmission.
Substrate 111 is DCB substrate, and as shown in figure 14, possesses insulating body 11, right side metal component 12 and back metal Component 14.Insulating body 11 is the flat board of the ceramic of Al2O3, AlN, SiN etc..As shown in Figure 11 and Figure 13, tabular exhausted Edge matrix 11 has recess 11D in its perimembranous, such as two corners in corner.A pair recess 11D is by insulating body 11 Diagonal position cut and formed, and be respectively facing the side face of insulating body 11 and thickness direction and open.As shown in figure 11, The installed surface 11A installing LED chip 131 is defined as the surface of insulating body 11, the face of the opposition side of installed surface 11A is defined Back side 11B for insulating body 11.The installed surface 11A and back side 11B of insulating body 11 are parallel.
Right side metal component 12 is formed at the face side of insulating body 11.Right side metal component 12 includes weld pad 12p and confession Electricity portion 12q.Weld pad 12p and power supply section 12q is directly joined the installed surface 11A of insulating body 11 by DCB method.Front gold Metal elements 12 makes the heat of LED chip 131 be distributed, and the light sending this LED chip 131 reflects.Back metal Component 14 is configured at the 11B side, the back side of insulating body 11, and is directly engaged by DCB method.Right side metal component 12 and the back of the body Face hardware 14 is copper.
In the directly joint utilizing DCB method, in right side metal component 12 made of copper and the one of back side metal component 14 Face forms copper oxide tunicle, and is configured towards the insulating body 11 of ceramic by this copper oxide tunicle.Utilize heating furnace, with than The temperature that the melt temperature of copper is low and higher than the melt temperature of copper oxide tunicle heats, thus at front metal made of copper Component 12 and back side metal component 14 form eutectic fused mass on the joint interface of the insulating body 11 of ceramic.By this Eutectic fused mass, right side metal component 12 and back side metal component 14 are engaged in installed surface 11A or the back side of insulating body 11 11B。
It is directly joined the right side metal component 12 of installed surface 11A by being divided into rectangular multiple weld pad 12p to constitute.As Shown in Figure 15, each weld pad 12p is corresponding to the arrangement of multiple LED chip 131, and is configured to equally spaced arranging of square arrangement Rectangular.Power supply section 12q sky is opened fixing gap (gap) and is configured in Figure 15 the both sides in the region of the weld pad 12p of arrangement.
The power supply section 12q of the scope coinciding with installed surface 11A is directly joined installed surface 11A.Peace from insulating body 11 The free end of each power supply section 12q that dress face 11A protrudes as the crow flies towards outside is used as power supply terminal 12r.Power supply terminal 12r As shown in figure 14, the thickness direction towards insulating body 11 does not changes position, but extends parallel to installed surface 11A.Supply Electric terminal 12r can also bend towards the thickness direction of insulating body 11 to the direction of remotely mounted 11A, and then before it End, is formed towards crank (crank) shape of the direction bending parallel with installed surface 11A.
Power supply section 12q is formed relative to the center of insulating body 11 with forming point symmetry, and this power supply terminal 12r is relative to figure The recess 11D of the insulating body 11 shown in 11 and Figure 13 and configure with offseting.Power supply section 12q is connected to not shown power supply and uses Insulating wrapped electric wire.
The light-emitting device 10 of the 5th embodiment is set side by side with Multi-row serial and connects the LED strip connection electricity having LED chip 131 Road.Light-emitting device 10 shown in Figure 15 is connected in series with 5 the LED strip connection circuit in parallel of 7 LED chip 131 and is connected to supply Electricity portion 12q.In order to each LED strip connection circuit is powered, outside the two of the region of weld pad 12p, configure a pair power supply section 12q.All LED chip 131 can also be connected in series and powered.Now, power supply section 12q is adjacent to the two ends of series circuit Weld pad 12p and configure.
The right side metal component 12 i.e. surface layer of weld pad 12p and power supply section 12q is laminated with significantly thinner than these front metal structures The metal level of part 12.This metal level by the surface of right side metal component 12 with the basic plating of the thickness plating of about 3 μm Layer and constituted with the plated surface coating of the thickness plating of about 0.3 μm outside it.Basis plating layer is nickel plating layer, surface Plating layer is copper (Cu), silver (Ag), the plating layer of any one of gold (Au).If plated surface coating is formed by silver coating, then with Situation without plating layer is compared, and can strengthen the luminous reflectance amount of each weld pad 12p constituting right side metal component 12.
The weld pad 12p and power supply section 12q of right side metal component 12 is in the following sequence and in the installation of insulating body 11 The surface of face 11A is formed as determined pattern.First, utilize the metal die of press, will have the one of the thickness of homogenizing Sheet metal sheet, is that copper sheet material (sheet) is struck out the pattern predetermined in the 5th embodiment.The copper that will stamp out Sheet material is engaged by eutectic or spreads the interface such as joint and be directly joined installed surface 11A.After implementing plating process, cut Except to being engaged between the weld pad 12p and power supply section 12q of the copper sheet material of installed surface 11A the electric bridge portion being attached.Thus, shape Become independent weld pad 12p and power supply section 12q.
Weld pad 12p and power supply section 12q can also utilize additive method to be formed.That is, be formed into the thickness fixed with And a piece of copper sheet material of size be directly joined insulating body 11 installed surface 11A after, be etched into desired pattern, to go Except unwanted position.Remaining necessary part, i.e. the weld pad 12p and power supply section 12q of right side metal component 12 implement subsequently Plating processes.
Back side metal component 14 is directly joined the back side 11B of insulating body 11 by DCB method.Back side metal component 14 It is to prevent the substrate 111 warpage in manufacturing process and setting to dispel the heat.Back side metal component 14 is covered as shown in figure 12 The most whole region of the back side 11B of lid insulating body 11.This back side metal component 14 becomes flat condition, and such as Figure 11～Figure 13 institute Show, in many places, the 5th embodiment is be provided integrally with fixed part 14C at Liang Chu.
Fixed part 14C highlights from the perimembranous of insulating body 11 towards the recess 11D of insulating body 11 along back side 11B. This fixed part 14C has screw reach through hole 14D.Screw reach through hole 14D can also be replaced and it is to cut as the slit of fixed part (slot).
Be directly joined as the metal material of sheet the right side metal component 12 of insulating body 11 weld pad 12p, Power supply section 12q is to select in the range of 200 μm～500 μm with the thickness of back side metal component 14, in order to by by it Be directly joined insulating body 11 and reach target thickness.Right side metal component 12 and back side metal component 14 are much thicker than gold Belong to plating layer, therefore there is mechanical strength.
The thickness of back side metal component 14 thickness than the power supply section 12q of right side metal component 12 is thinner.When by DCB method When manufacturing substrate 111, after once the temperature of substrate 111 rises because directly engaging, till dropping to room temperature, then there is front Hardware 12 side becomes convex and that the change of back side metal component 14 side is recessed tendency.The thickness of back side metal component 14 corresponds to front The pattern of hardware 12 determines, to suppress substrate 111 that warpage occurs.
Each LED chip 131 can use the semiconductor light-emitting elements of various illuminant color.In 5th embodiment, use and send indigo plant The LED chip of coloured light.LED chip 131 is semiconductor bare chip (bare chip), as shown in figure 14, by device substrate 131a, Semiconductor light emitting layer 131b and element electrode 131c gives stacking and constitutes.Device substrate 131a is by sapphire (sapphire) Deng megohmite insulant made by.Semiconductor light emitting layer 131b is laminated on device substrate 131a, sends the blue light of monochrome.Unit Part electrode 131c is made up of a pair positive pole and negative pole, and is formed on semiconductor light emitting layer 131b.
In order to install LED chip 131 in the installed surface 11A side of insulating body 11, it is laminated with semiconductor light emitting layer 131b's The face of the device substrate 131a of opposition side is individually fixed in each weld pad 12p by die-bond material 17.Die-bond material 17 is the resin binder of silver paste or transparent silicone resin etc..
Each LED chip 131 is to install in being heated to about the environment of 300 DEG C.Now, by right side metal component The weld pad 12p and power supply section 12q of 12 are relative to the area shared by the installed surface 11A of insulating body 11 and back side metal component 14 are adjusted relative to the difference of the area shared by the back side 11B of insulating body 11, to control the warpage of substrate 111.That is, according to To be engaged in the right side metal component 12 on the surface of insulating body 11 and to be engaged in the back side metal component 14 of back side 11B respective Area and thickness based on and the volume (volume) that converts is poor, suppress the warpage of insulating body 11.Right side metal component 12 are formed as the pattern being made up of weld pad 12p and power supply section 12q, and therefore area is less than back side metal component 14.If front Hardware 12 is identical with the thickness of back side metal component 14, and the most measurable substrate 111 is by the installed surface 11A with insulating body 11 Side becomes convex and that the change of 11B side, the back side is recessed mode generation warpage.Therefore, the thickness making back side metal component 14 is thinner than front metal structure The thickness of part 12.
When not adjusting the thickness of back side metal component 14 relative to right side metal component 12, substrate 111 likely can The warpage that generation cannot allow, till installing the operation of LED chip 131.Once there is warpage in substrate 111, it may be difficult to suitable Thickness when managing chip welding material 17.If the thickness of die-bond material 17 is heterogeneous body, then LED chip 131 may Can install bad.The heat that not sufficiently LED chip 131 makes the period of LED chip 131 lighting produce is installed weld via chip Material 17 and distribute to weld pad 12p ability will decline.Then, the luminescent properties of LED chip 131 declines, and the life-span also shortens.
If there is warpage in the period of LED chip 131 lighting, the central part of the substrate 111 that should be close to radiating component can Can be away from radiating component.From the heat transfer process reduction of the part that radiating component is peeled off, form so-called heat spot (heat Spot).The luminescent properties of the LED chip 131 being formed with the part of heat spot will decline, and the lost of life.5th embodiment Light-emitting device 10 is thinner than the weld pad 12p and power supply section 12q of right side metal component 12 by making the thickness of back side metal component 14 Thickness, thus will install before LED chip 131 and make the substrate 111 of the period of LED chip 131 lighting on substrate 111 Warpage suppression for less.The fault of the warpage that the substrate 111 of light-emitting device 10 exceedes allowance is cut down, and therefore sends out The quality of electro-optical device 10 improves.
Ligthing paraphernalia 100 possesses the thickness of back side metal component 14 than the weld pad 12p of right side metal component 12 and power supply The light-emitting device 10 that the thickness of portion 12q is thinner, therefore in the period of ligthing paraphernalia 100 lighting, because being formed at insulating body 11 Surface and the volume ratio of the hardware at the back side and cause that the installed surface 11A side of insulating body 11 becomes convex and 11B side, the back side becomes recessed Warpage occur situation suppressed.And, by suppression substrate 111 occur warpage, the central part of substrate 111 will be difficult to from Radiating component is peeled off, thus without forming heat spot on substrate 111.
As shown in Figure 14 and Figure 15, the element electrode 131c and weld pad 12p of each LED chip 131 and power supply section 12q are It is electrically connected with by closing line W.Now, wherein the element electrode 131c of a pole is connected to be provided with this by closing line W The weld pad 12p of LED chip 131, the element electrode 131c of another pole are connected to and are provided with LED chip 131 by closing line W Another weld pad 12p adjacent for weld pad 12p.LED chip 131 company of being one another in series connected via closing line W and weld pad 12p Connect.
It is positioned at the element electrode 131c of LED chip 131 of the one end of the LED chip row being connected in series by closing line W It is connected to and is provided with the adjacent power supply section 12q of the weld pad 12p of this LED chip 131, another that be positioned at LED chip row is installed The weld pad 12p of the LED chip 131 of end is connected to another power supply section 12q by closing line W.Multiple LED chip are listed in and are positioned at It is connected in parallel between the power supply section 12q of the both sides in the direction that these row are extended.
As shown in Figure 11 and Figure 14, light-emitting device 10 has encirclement weld pad 12p and a part of power supply section 12q and joins The frame component 16 put.Frame component 16 has receiving within it and is installed on each LED chip 131 of weld pad 12p and to each LED core The height of the closing line W that sheet 131 is attached, and this frame component 16 is bonded on the installed surface 11A of substrate 111.
LED chip 131 and closing line W utilize to fill and enter to the containment member 18 of the inner side surrounded by frame component 16 Row is buried underground.Containment member 18 is transparent resin system, is transparent silicone resin system, and contains in inside in the 5th embodiment Fluorophor.Fluorophor the blue light radiated by LED chip 131 a part radiate particular color when exciting Light.In the case of 5th embodiment, in containment member 18, rub into having relative to LED chip with interpolation ratio set in advance 131 radiation blue lights and excite radiation sodium yellow yellow fluorophor, excite radiation red light red-emitting phosphors or swash Provide the green-emitting phosphor penetrating green light.
The light-emitting device 10 of above structure is installed in the member for mount 3 of ligthing paraphernalia 100 as shown in Figure 9.As Fig. 9 with And shown in Figure 10, member for mount 3 possesses fin 31 and the heated parts 35 constituting housing.When being applicable to the illumination shown in Fig. 7 Time beyond utensil 100, member for mount 3 can also be metal housing.In ligthing paraphernalia 100, by illuminating light institute The side of radiation is defined as " front " or " front ", and its opposition side is defined as " back side " or " afterwards ".
Fin 31 is the die casting of aluminum, and as shown in Fig. 9 and Figure 10, is provided integrally with multiple being vertically mounted on greatly Cause the radiating fin (fin) 33 at the back side of discoideus base 32.Each radiating fin 33 is parallel to each other.
Heated parts 35 is to have and the cuboid of the thickness that the thickness of base 32 is same degree.This heated parts 35 is and heat radiation Sheet 31 is not consubstantiality, and is arranged on and the front that radiating fin 33 is opposition side relative to base 32.Heated parts 35 such as Fig. 9 institute Show the front of contact base 32, and connect by being inserted into the connecting piece 34 of multiple screws etc. of base 32 from radiating fin 33 side Tie in fin 31.Heated parts 35 can also be integrally formed with base 32.
The heated parts 35 being fixed on base 32 is radially extending along this base 32 by the center of base 32, and with scattered Hot fin 33 is arranged abreast.As shown in Figure 10, corresponding to installing the position of heated parts 35, there are 34 break-through of connecting piece Link hole 32a.
Light-emitting device 10 is fixed on and vertically configures the heated parts 35 of heating surface 35b relative to the front of base 32 On.Thermally-conductive sheet 36 towards heating surface 35b, and as shown in Figure 10, is inserted by these light-emitting devices 10 by back side metal component 14 Fix between back side metal component 14 and heating surface 35b.Each light-emitting device 10 is utilized through the screw reach through hole of fixed part 14C 14D and the screw that is arranged on heated parts 35 fix.
As shown in Figure 10, heated parts 35 has hiding groove 35a on each heating surface 35b.Power supply terminal 12r be arranged in On the position that this hiding groove 35a coincide.The insulating wrapped electric wire being connected to power supply terminal 12r is equipped in hiding groove 35a.Lead Backing material 36 is the soft silicone resin system of excellent thermal conductivity.Even if substrate 111 is slightly warpage because of variations in temperature, owing to leading Backing material 36 is flat, thus this thermally-conductive sheet 36 will seamlessly contact the back side metal component 14 of heating surface 35b and substrate 111 Both.Owing to being inserted with thermally-conductive sheet 36, therefore heat produced by light-emitting device 10 will be in the case of transmission loss be less It is transferred to heating surface 35b from back side metal component 14.
The substrate 111 of the light-emitting device 10 being fixed on the heated parts 35 of member for mount 3 is DCB substrate, and it possesses directly It is engaged in the back side metal component 14 of the back side 11B of the insulating body 11 of ceramic.This hardware 14 use 200 μm～ The copper sheet material of the thickness of 500 μm.The fixed part 14C formed with back side metal component 14 has and is fixed at by substrate 111 Sufficient intensity required during heated parts 35.Fixed part 14C is the back metal extended in the perimembranous more lateral of insulating body 11 A part for component 14.That is, do not make screw pass the insulating body 11 of ceramic, and screw is installed on fixed part 14C's Screw reach through hole 14D, it is possible to be installed on heated parts 35 substrate 111 of light-emitting device 10.
It is formed with screw reach through hole 14D and is used as the fixed part 14C of screw penetrating part and be and the substrate becoming DCB substrate The back side metal component 14 of 111 is integrated.Therefore, not increasing parts count just can the solid substrate 111 of spiral shell.And, for sending out The substrate 111 of electro-optical device 10 is fixed on the screw insulating body 11 not through ceramic of heated parts 35, though therefore screw Tightening torque superfluous, insulating body 11 is also less likely to occur breakage.
As shown in Fig. 7～Figure 10, concave mirror 4 is to be made up of a pair concave mirror component 41 made with aluminum.Each concave surface The reflecting surface of mirror component 41 is formed as parabola as shown in Figure 9, and minute surface has been carried out polish.Concave mirror component 41 such as figure Shown in 10, the edge 41a with the semicircle arcuation being positioned at light exit side and the seat portion 41b of base 32 side being positioned at fin 31.Seat Portion 41b is formed along the flat condition of base 32, and has otch 41c.Concave mirror component 41 is as it is shown in figure 9, make a portion 41b connect Touch the front of the base 32 of fin 31, and by be arranged in the fixing hole 32c of base 32 by the way of covering otch 41c Screw 42, and be fixed on base 32.It is to pacify on base 32 for concave mirror component 41 being fixed on the screw 42 of base 32 Before dress heated parts 35, it is installed in fixing hole 32c.
It is fixed on a pair concave mirror component 41 of face side of fin 31 in the both sides of heated parts 35 towards light-emitting device 10, and configure symmetrically in face with this heated parts 35 as border.Become light-emitting device 10 illuminating part, there was added fluorescence The containment member 18 of body is with the reflecting surface being made up of the parabola of concave mirror component 41 in opposite directions.Light-emitting device 10 such as Figure 15 institute Show, configure in the way of the central part P of the illuminating part of light-emitting device 10 is positioned at the focal point of concave mirror component 41.
The light beam radiated from ligthing paraphernalia 100 centrally along radial direction away from the end of heated parts 35, from front Side utilizes screw to be fixed with pressure mirror part 45.Pressure mirror part 45 be provided integrally be connected to heated parts 35 installation sheet portion 45a and The patch portion 45b bent along reflecting surface.A pair concave mirror component 41 due between be inserted with heated parts 35 and make reflecting surface Correspondingly separate.When installation sheet portion 45a is fixed at heated parts 35, between patch portion 45b is to block between concave mirror component 41 The mode of gap and configure.Thus, as shown in Figure 7 and Figure 8, the front-end edge of the edge 41a of concave mirror component 41 and patch portion 45b 45c forms the shape being approximately circular.
Double as the mirror supporting member 5 of outer housing of concave mirror 4 as shown in Fig. 9 and Figure 10, by columnar base portion 5a And be that the support 5b of loudspeaker (horn) shape extension is constituted from its one end.Support 5b is the cone-shaped that diameter is more than base portion 5a, And as shown in Figure 8, rounded when face side is observed.Mirror supporting member 5 makes base portion 5a hit against the front of base 32, and makes supporting The peripheral part back side of portion 5b contact concave mirror 4, thus be maintained between the perimembranous of base 32 and concave mirror 4.Mirror Supporting member 5 supports concave mirror 4 from dorsal part.
After mirror supporting member 5 is pre-configured in the face side of base 32, by the concave mirror component being fixed on base 32 41 are kept.On the support 5b of mirror supporting member 5 formed opening edge 5c be positioned at concave mirror component 41 edge 41a and The front-end edge 45c of pressure mirror part 45 more front side, i.e. be positioned at light exit side.As it is shown in figure 9, concave mirror 4 and pressure mirror part 45 quilt It is accommodated in mirror supporting member 5.Cable aperture 5d shown in Fig. 7 and Figure 10 is the insulation in order to be connected to power supply terminal 12r Covered electric cable passes and arranges.
When this ligthing paraphernalia 100 is carried out lighting, each LED chip 131 of light-emitting device 10 is luminous.There was added fluorophor Containment member 18 sent white light by the exciting of light of LED chip 131.The light that containment member 18 is radiated by with this Light portion concave mirror component 41 in opposite directions is reflected, towards the light radiation direction of ligthing paraphernalia 100 and outgoing.By this pair concave mirror The projective patterns of the light that component 41 is reflected is circular, and these patterns are relative to the ligthing paraphernalia becoming spotlight 100 and the most identical on the most remote irradiation object.
The temperature of the substrate 111 of light-emitting device 10 changes with light-off along with the lighting of ligthing paraphernalia 100.Ligthing paraphernalia The period of 100 lightings, heat produced by each LED chip 131, the temperature of substrate 111 and heated parts 35 rises.Now, The thermal expansion of heated parts 35 is bigger compared with the thermal expansion of the insulating body 11 of the ceramic of substrate 111.Substrate 111 is because of this thermal expansion difference And it is pressed into the heating surface 35b of heated parts 35, it is directed away from the direction of heating surface 35b and convex deformation occurs.And, directly engage Swollen compared with the heat of the insulating body 11 of ceramic in the thermal expansion of the back side metal component made of copper 14 of the back side 11B of insulating body 11 Swollen bigger.Therefore, substrate 111 is directed away from the direction convex deformation of generation of the heating surface 35b of heated parts 35 because of this thermal expansion difference.
The light-emitting device 10 of the ligthing paraphernalia 100 of the 5th embodiment does not make screw pass insulating body 11, but makes spiral shell Silk is through the screw reach through hole 14D of fixed part 14C set in back side metal component 14, thus is fixed on by substrate 111 and is heated Portion 35.Owing to not bearing load on the insulating body 11 of ceramic, therefore insulating body 11 will not occur breakage because of spiro-fixing part.
Using 1/4 part of the light-emitting device 10 of the 5th embodiment shown in Figure 15 as model (model), to manufacturing DCB The amount of warpage produced during substrate is simulated (simulation).The physics value of the insulating body 11 of ceramic is set to, Young Modulus 354000 [MPa], Poisson's ratio (Poisson ratio) 0.26, linear expansion coefficient 7.09 × 10-6, thermal conductivity 0.024 [W/ mm·℃].And, the physics value being right side metal component 12 made of copper and back side metal component 14 is set to, Young mould Amount 130000 [Mpa], Poisson's ratio 0.343, linear expansion coefficient 17.7 × 10-6, thermal conductivity 0.398 [W/mm DEG C].
And, the thickness of insulating body 11 is set to the 0.25mm fixed, and makes right side metal component 12 and back-side gold 6 models that the thickness of metal elements 14 changes respectively are tested.Temperature conditions as manufacturing process, it is assumed that temperature is from room temperature 25 DEG C of situations about being changed to till 300 DEG C of simulation eutectic joint technology (process), relative to the center of substrate 111, to base The deflection of plate 111 entirety carries out numerical analysis.
According to analysis result, by the volume of right side metal component 12 relative to the volume of back side metal component 14 ratio with Relation between the total deformation of substrate 111 is shown in Figure 16.According to this Figure 16 it is appreciated that volume ratio be more than 0.7 and In the scope of less than 1.07, volume ratio is closer to 1.00, and the warpage of substrate 111 is the least.If this volume ratio is converted into the back side Hardware 14 is relative to the volume of right side metal component 12, then volume ratio is the scope of 93%～140%, can be by the warpage of substrate Amount controls in allowed band.
In the amount of warpage of substrate of light-emitting device 10 of the 1st embodiment relative to right side metal component 12 and back metal In the relation of the volume ratio of component 14, it is known that as long as hardware is relative to the volume of right side metal component 12 overleaf Ratio is thickness and the surface area adjusting back side metal component 14 in the range of 50% to 100%, just can be by the amount of warpage control of substrate System is in allowed band.Now, volume ratio is closer to 100%, and the warpage of substrate is the fewest.
Based on the result of the 1st embodiment and the 5th embodiment simulation as a result, it is possible to so say: even if just The weld pad of face hardware or the pattern of power supply section are different, and the amount of substrate warp is also almost without change.Metal structure overleaf Part is in the range of 50%～140% relative to the volume ratio of right side metal component, can control the amount of warpage of substrate allowing model In enclosing.Now, if volume ratio is near 100%, then the amount of warpage of substrate is few.
The above, be only presently preferred embodiments of the present invention, and the present invention not makees any pro forma restriction, though So the present invention is disclosed above with preferred embodiment, but is not limited to the present invention, any technology people being familiar with this specialty Member, in the range of without departing from technical solution of the present invention, when the structure of available the disclosure above and technology contents make a little more Dynamic or be modified to the Equivalent embodiments of equivalent variations, but every content without departing from technical solution of the present invention, according to the present invention Technical spirit any simple modification, equivalent variations and modification that above example is made, all still fall within the technology of the present invention side In the range of case.

Claims (4)

1. a light-emitting device, it is characterised in that including:
The insulating body of ceramic；
Right side metal component, splits and is configured at the surface of described insulating body；
Light source, is installed in described right side metal component；And
Back side metal component, is located at the back side of described insulating body, and all of edge of described back side metal component is with described The mode at the interval, outer end of insulating body is configured on described insulating body,
Described right side metal component includes:
Power supply section, described power supply section is located at the peripheral part of described insulating body；
1st right side metal component, described light source is installed on described 1st right side metal component；And
2nd right side metal component, and described 1st right side metal component is that the mode of electric insulation is spaced setting, and with described power supply The interval, outer end of portion and described insulating body is arranged, and at least part of peripheral part being to be located at described insulating body, its In
Described right side metal component and described back side metal component are electric insulations,
Described back side metal component is more than 50% relative to the volume ratio of described right side metal component,
The thickness of described back side metal component is below the thickness of described right side metal component,
To with the part by described power supply section with the peripheral part being at least located at described insulating body of described 2nd right side metal component The mode that described light source surrounds installs described light source.
Light-emitting device the most according to claim 1, it is characterised in that
The area of described back side metal component is more than the area of described right side metal component.
Light-emitting device the most according to claim 1, it is characterised in that the thickness of described back side metal component and described front The thickness of hardware is identical.
4. a ligthing paraphernalia, it is characterised in that include at least one luminous dress according to any one of claim 1 to 3 Put and be used as light source.
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