CN103325778A - Light-emitting device and lighting appliance - Google Patents
Light-emitting device and lighting appliance Download PDFInfo
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- CN103325778A CN103325778A CN2013101756596A CN201310175659A CN103325778A CN 103325778 A CN103325778 A CN 103325778A CN 2013101756596 A CN2013101756596 A CN 2013101756596A CN 201310175659 A CN201310175659 A CN 201310175659A CN 103325778 A CN103325778 A CN 103325778A
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- metal member
- light
- insulating body
- emitting device
- substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Abstract
The invention provides a light-emitting device with a ceramic substrate difficult to generate warping due to heat. The light-emitting device (10) is provided with an insulating base body (11), a right side metal component (12), a light source (13), and a back side metal component (14). The insulating base body is ceramic. The right side metal component (2) is separated and disposed on the surface (installation surface (11A)) of the insulating base body (11). The light source (13) is installed on the right side metal component (12). The back side metal component (14) is disposed at the back side (11B) of the insulating base body (11). The right side metal component (12) includes a first right side metal component and a second right side metal component. The light source (13) is arranged on the first right side metal component. The second right side metal component and the first right side metal component are arranged at the intervals in an electric insulation manner, and at least one part of the second right side metal component is arranged at the outer periphery of the insulating base body (11).
Description
The application's case is that denomination of invention is " light-emitting device and ligthing paraphernalia ", and application number is dividing an application of 201010518806.1 patent application case.
Female case of the application's case is based on previous Japanese patent application case 2009-242119(and applies on October 21st, 2009) and Japanese patent application case 2009-266558(apply on November 24th, 2009), and require priority wherein, its full content is disclosed in this with reference example.
The application of this division also requires above-mentioned priority.
Technical field
Embodiments of the present invention relate to a kind of ligthing paraphernalia that possesses the light-emitting device of semiconductor light-emitting elements and possess light-emitting device.
Background technology
Have and a kind ofly in light source, use light-emitting diode (light emitting diode, LED) chip (chip) is used as the light-emitting device of semiconductor light-emitting elements.Therefore LED has improved luminous efficiency, the light source of the relatively large ligthing paraphernalia of using etc. as office (office) or general lighting and obtain adopting.And, in order to expand the purposes as light source, require the high and high LED that exports of conversion efficiency.In order to realize the LED of high output, the heat efficiency that produces when how to make LED luminous dispels the heat well and becomes important topic.
A kind of light-emitting device that led chip is lit a lamp with the electric power more than the 1W is arranged.Be used as the substrate that led chip is installed by the 1st metal level, insulating core (core) and the cambial substrate of the 2nd metal level.Insulating core is that smooth pottery (ceramics) is made.The 1st metal level is that copper or the aluminium of excellent electric conductivity is made for led chip is carried out distribution, is forming pattern (pattern) at a face of insulating core.A plurality of led chips are installed on the 1st metal level of design (design) one-tenth pattern.The 2nd metal level be that the copper of excellent thermal conductivity becomes or aluminium is made and roughly one and be formed flatly with the 1st metal level be on the face of insulating core of opposition side, to engage and to bring into play heat sinking function with radiating component but not bear electricity connection function.This light-emitting device has used the material of excellent thermal conductivity for the 2nd metal level, so the heat that LED produces diffuses to efficient in the substrate well.Therefore, this light-emitting device is compared with the situation that does not have heat sinking function, can make LED work with big electric current.
And, a kind of light-emitting device is arranged, it uses the high pottery of thermal conductivity to be used as for the circuit substrate that LED is installed.By utilizing this circuit substrate to conduct the heat that LED produces, can suppress substrate generation deformation.This light-emitting device is being that opposition side is forming the metal pattern that engages with a side that LED installs.The joint pattern of light-emitting device utilizes Pb-free solder and engages with the heat-radiating substrate of configuration in opposite directions.For fear of produce crack (crack) when engaging the welding of pattern and heat-radiating substrate, heat-radiating substrate is to be formed by the material roughly the same with engaging pattern identical materials or coefficient of thermal expansion.Light-emitting device and the position corresponding engagement pattern that disposes of LED and heat-radiating substrate between master (main) junction surface that forms around have open area.Open area makes the crack can not reach main junction surface.
[look-ahead technique document]
[patent documentation]
[patent documentation 1] Japan Patent spy opens the 2005-79593 communique
[patent documentation 2] Japan Patent spy opens the 2009-212367 communique
Yet in the light-emitting device that adopts the substrate that engages the 1st metal level and the 2nd metal level with respect to insulating core, the 1st metal level and the 2nd metal level directly engage respectively or seal.The substrate that makes the 1st metal level and the 2nd metal level directly be engaged in insulating core and constitute is called direct copper (Direct Copper Bonding, DCB) substrate, the substrate that utilizes Pb-free solder to make the 1st metal level and the 2nd metal level be engaged in insulating core and constitute is called reactive metal sealing-in (Active Metal Bonding, AMB) substrate.The insulating core that constitutes these DCB substrates and AMB substrate is different with the material of the 1st metal level or the 2nd metal level, so coefficient of thermal expansion and heat-transfer rate are also different certainly.The part is formed with metal level to the 1st metal level in order to form Wiring pattern.The 2nd metal level is in order to bring into play thermolysis, spreads all over roughly whole and be formed with metal level.So, because the 1st metal level is different with the pattern form of the 2nd metal level, if therefore suffer hot environment or rapid variations in temperature in the fabrication stage, substrate integral body will produce tangible warpage.In addition, adopt the light-emitting device of the high pottery of thermal conductivity not consider to prevent the globality warpage of substrate to substrate.
If substrate generation globality warpage, then in the operation of making light-emitting device, operability is with variation.And, keep the state that warpage produced and the light-emitting device of finishing in being assembled to lighting apparatus the time, can't fully obtain and be used for housing (case) member of heat radiation or the contact area of fin radiating components such as (heat sink).That is, the heat that led chip produces can't be passed to housing member or radiating component.Thus, luminous efficiency reduces, thereby can't obtain to meet the light beam of design load.And, if substrate generation warpage can form the gap between substrate and housing member or radiating component.If use the securing member of screw etc. to come fastening substrate exceedingly in order to eliminate the gap, then substrate may produce the crack and breakage.
The DCB substrate strengthens the 1st metal layer thickness in order to improve thermal endurance.The 2nd metal level of DCB substrate is thinner than insulating core, and via connection materials such as scolding tin, hot lubricating oil (grease), phase transformation adhesive tape (tape) or hot glue cloth and be engaged in fin.Perhaps, the DCB substrate will be connected in the 2nd metal level than the 2nd metal bed thickness and wide base (base).Base is fixed to fin etc. by bolt (bolt) or rivet (rivet) are passed 2 otch being located at perimembranous.But if base is set outside the DCB substrate separately, the part number will increase and cost (cost) will uprise.
If Pb-free solder, then the melt temperature of scolding tin is about 230 ℃, is lower than the heat resisting temperature that led chip is mounted to the binding material of the 1st metal level.When using scolding tin as the connection material the 2nd metal level to be mounted to fin, if light-emitting device uses under hot environment, perhaps turn off the light because lighting a lamp and apply variations in temperature repeatedly, then might cause scolding tin generation deterioration or crack because of high-temerature creep (creep) or thermal stress fatigue.Keep good state for solder sections is divided, must suppress the electric power to the led chip supply, too high with the temperature of avoiding the DCB substrate.But this way has been run counter to the requirement that improves the brightness of led chip.
As the method for direct fixing cooling fins on the DCB substrate, consider to utilize the screw hole that forms on the insulating core of DCB substrate to fix fin.But, not good on following 2.The first, the moment of torsion of using when holding screw (torque) is crossed when strong, because insulating core be the pottery system, so breakage may take place.The 2nd metal level of the second, DCB substrate and the coefficient of linear expansion of fin are big than the coefficient of linear expansion of DCB substrate, if the therefore temperature rising of DCB substrate and fin, then the DCB substrate also warpage can take place sometimes.At this moment, stress may concentrate on screw hole and cause insulating core that breakage takes place.Therefore, require a kind ofly not use the part base beyond the light-emitting device and the DCB substrate is fixed in the technology of radiators such as fin.
Summary of the invention
Therefore, provide a kind of substrate of pottery system to be difficult to Yin Re and the ligthing paraphernalia that the light-emitting device of warpage takes place and possess this light-emitting device.
The light-emitting device of one execution mode has insulating body, front metal member, semiconductor light-emitting elements and back metal member.Insulating body is the pottery system.The surface of insulating body is cut apart and be disposed to the front metal member.Semiconductor light-emitting elements is installed on the front metal member.The back metal member is formed at the back side of insulating body with the thickness identical or thinner with the front metal member.The volume of the volume of back metal member and front metal member is in a ratio of more than 50%.And the ligthing paraphernalia of an execution mode possesses this light-emitting device.
(effect of invention)
The volume that makes the back metal member with respect to the volume of front metal member is that the light-emitting device more than 50% can make the substrate that comprises insulating body be suppressed because of the warpage that heat takes place.And, possess the ligthing paraphernalia of this light-emitting device that can suppress substrate generation warpage, distribute well by the heat efficiency that makes substrate, and make the life-span of semiconductor light-emitting elements stable, so that the illumination of stay in grade to be provided.
Description of drawings
Figure 1A is the plane graph of observing the light-emitting device of the 1st execution mode from the light emission side.
Figure 1B is the profile of the light-emitting device of the 1b-1b line in Figure 1A.
Fig. 1 C is the back view of the light-emitting device shown in Figure 1A.
Fig. 2 A is the profile with ligthing paraphernalia of the light-emitting device shown in Figure 1A.
Fig. 2 B is the front elevation of observing the ligthing paraphernalia shown in Fig. 2 A from the light emission side.
Fig. 3 A is the plane graph of observing the light-emitting device of the 2nd execution mode from the light emission side.
Fig. 3 B is the profile of the light-emitting device of the 3b-3b line in Fig. 3 A.
Fig. 3 C is the back view of the light-emitting device shown in Fig. 3 A.
Fig. 4 A is the plane graph of observing the light-emitting device of the 3rd execution mode from the light emission side.
Fig. 4 B is the profile of the light-emitting device of the 4b-4b line in Fig. 4 A.
Fig. 5 A is the profile that the part of the light-emitting device shown in Fig. 4 B is cut.
Fig. 5 B is the profile that is equivalent to the light-emitting device in the past of Fig. 5 A.
Fig. 6 A is the plane graph of observing the light-emitting device of the 4th execution mode from the light emission side.
Fig. 6 B is the profile of the light-emitting device of the 6b-6b line in Fig. 6 A.
Fig. 6 C is the back view of the light-emitting device shown in Fig. 6 A.
Fig. 7 is the stereogram that light-emitting device that expression possesses the 5th execution mode is used as the ligthing paraphernalia of light source.
Fig. 8 is the front elevation of observing ligthing paraphernalia shown in Figure 7 from the light emission side.
Fig. 9 is the profile of ligthing paraphernalia shown in Figure 7.
Figure 10 is the exploded perspective view of ligthing paraphernalia shown in Figure 7.
Figure 11 is the front elevation of observing light-emitting device shown in Figure 7 from the light emission side.
Figure 12 is the back view of light-emitting device shown in Figure 11.
Figure 13 is the front elevation of the state before light-emitting device shown in Figure 11 is installed led chip.
Figure 14 is the profile of the light-emitting device of the F8-F8 line in Figure 11.
Figure 15 is the plane graph of arrangement of the led chip of light-emitting device shown in Figure 11.
Figure 16 is the figure of the relation of the deflection that produces with respect to volume ratio and the insulating body of back metal member of the front metal member of the light-emitting device of expression Figure 15.
3: member for mount 4: concave mirror
5: mirror supporting member 5a: base portion
5b: support 5c: opening edge
5d: cable aperture 10: light-emitting device
11: insulating body 11A: the surface of insulating body
11B: the back side 11C of insulating body: installing hole
11D: recess 12: front metal member
12a, 12b, 12c, 12g, 12p: weld pad 12d: band-like portions
12e: rib 12f, 12q: power supply
12g1: corner 12g2: top
12g3: bottom 12g4: tapered portion
12r: power supply terminal 13: semiconductor light-emitting elements
14: back metal member 14a, 14b, 14c: block
14C: fixed part 14D: screw reach through hole
15: containment member 16: the frame member
17: die-bond material 18: containment member
20,100: ligthing paraphernalia 21: housing
21a: demarcation strip 22: ignition device
23: reflector 23a: the photoconduction entrance
23b: reflecting surface 24: power supply terminal platform
25: escutcheon 25a: outer cover component
26: strutting piece 31: fin
32: base 32a: connect apertures
32c: fixing hole 33: radiating fin
34: connecting piece 35: the portion of being heated
35a: hide groove 35b: heating surface
36: thermally-conductive sheet 41: the concave mirror member
41a: edge 41b: seat portion
41c: otch 42: screw
45: press mirror spare 45a: installation sheet portion
45b: the 45c of patch portion: front-end edge
111: substrate 120: zone
131:LED chip 131a: device substrate
131b: semiconductor light emitting layer 131c: element electrode
A: illuminating part C: edge part
H: hole P is set: central part
S: interval W: closing line
X: ceiling
Embodiment
The light-emitting device of one execution mode has insulating body, front metal member, semiconductor light-emitting elements and back metal member.Insulating body is the pottery system.The surface of insulating body is cut apart and be disposed to the front metal member.Semiconductor light-emitting elements is installed on the front metal member.The back metal member is formed at the back side of insulating body with the thickness identical or thinner with the front metal member.The volume of the volume of back metal member and front metal member is in a ratio of more than 50%.
Insulating body, front metal member and back metal member constitute substrate.As substrate, DCB(Direct Copper Bonding is arranged) substrate, directly weld aluminium (Direct Brazing Aluminum, DBA) substrate, reactive metal bit copper (Active Metal Brazed Copper, AMC) substrate etc.The DCB substrate is that the copper coin that will become the back metal member directly is engaged in the insulating body of pottery system and forms.The DBA substrate is that sealing-in becomes the aluminium sheet of back metal member and forms on the insulating body of pottery system.The AMC substrate be on the insulating body of pottery system sealing-in as the copper coin of back metal member and form.
Insulating body is for the member as the semiconductor light-emitting elements of light source such as configuration light-emitting diode (LED) chip, allows to use by aluminium nitride (AlN), silicon nitride (SiN), aluminium oxide (Al
2O
3) and with aluminium oxide (Al
2O
3) or zirconia (ZrO
2) agglomerated material made for the compound of principal component etc.The shape of insulating body is to adopt all shapes satisfy desired light distribution characteristic, for example square or rectangular, hexagon, with tetragonal four clipped corners (cut) and the octagon of making etc. polygon-shaped or circular or oval-shaped, a plurality of led chips are arranged with fixed intervals and the face mould piece (module) that forms or make led chip in rectangular line (line) arrangement and the wire module of formation.
In this specification, the face that the insulating body of the side that led chip and light radiates is installed is called " table ", the opposition side that will be somebody's turn to do " table " is called " back of the body ".
The front metal member that forms on the surface of insulating body forms Wiring pattern.Led chip as semiconductor light-emitting elements is equipped on this Wiring pattern.The manufacture method of insulating body and the installation method of led chip are not particularly limited.When insulating body forms the front metal member of the pattern that sets, utilize metal die, stamp out the residual secondary member that the electric bridge (bridge) that the pattern that sets and each part (parts) are linked is arranged from a slice hardware, come at first to prepare this secondary member by this.After this secondary member being engaged in the insulating body of pottery system, by electric bridge etc. do not needed part to be excised to obtain the front metal member.Perhaps, a slice hardware is engaged in after the insulating body of pottery system the pattern that etching (etching) becomes to set.
The material of front metal member is so long as the material of excellent electric conductivity then allows to use all materials such as copper, copper alloy, aluminium, aluminium alloy.The arrangement of front metal member is not limited, can be by these metals on insulating body partly or overall alignment matrix (matrix) shape that becomes to have fixed intervals, perhaps possesses permanent order regularly and partly or configured in one piece engrail, radial, helical form etc., (random) configuration perhaps at random.
Except being made of led chip, (Electroluminescence EL) waits the light-emitting component as light source also to be used as semiconductor light-emitting elements with semiconductor laser (laser), organic electroluminescent.Semiconductor light-emitting elements is to select necessary number according to the purposes of illumination, that is, both a plurality of semiconductor light-emitting elements can be installed on 1 front metal member, also can only 1 semiconductor light-emitting elements be installed on 1 front metal member.Semiconductor light-emitting elements is to set the color that becomes light source according to the purposes of ligthing paraphernalia, that is, when constituting the radiation white light, then be made of monochrome, and perhaps the secondary colour that is formed by multiple color combination such as redness, blueness, green, yellow constitutes.
Formed back metal member is to form with the thickness identical or thinner with the front metal member on the back side of insulating body, is used at the fixing light-emitting device of the radiating component of housing or fin etc.The back metal member does not possess electricity connection function usually, but constitutes in order to bring into play heat sinking function.Therefore, can utilize all metals of excellent thermal conductivity such as silver, copper, copper alloy, aluminium, aluminium alloy to be used as the back metal member.Thermal diffusivity considered by the back metal member that is formed by these metals and one constitutes flat board continuously.The back metal member may not need whole one to form continuously, also can partial cut or be divided into polylith.
Front metal member and back metal member are the metals that forms thin sheet material (sheet) shape, and are engaged in the insulating body of pottery system by sealing-in.Also can replace sealing-in, and by diffusion bond or eutectic engage and the sheet material interface that directly makes metal in the insulating body of pottery system.When with the Copper Foil diffusion bond during in pottery, be by on the insulating body that the Copper Foil after the oxidation is disposed at the pottery system and heat pressurization with about about 1050 ℃ and engage.And front metal member and back metal member also can be the thin metal levels that forms by plating and etching.
The back metal member is with respect to the volume ratio of front metal member, both the volume of front metal member can be adjusted the gauge of back metal member and made volume ratio as benchmark is more than 50%, also the volume of back metal member can be adjusted the gauge of front metal member as benchmark, so that the back metal member is more than 50% with respect to the volume ratio of front metal member.And the adjustment of the volume ratio of front metal member and back metal member both can make gauge identical and set volume ratio by changing surface area, also can make surface area identical and set volume ratio by changing gauge.And then the adjustment of the volume ratio of front metal member and back metal member also can be set by the two gauge or surface area of combination (front metal member and back metal member).And, the volume ratio of back metal member with respect to the front metal member is made as more than 50%, and the back metal area of members is greater than the front metal area of members.
The volume of front metal member both can only be set by the front metal member that semiconductor light-emitting elements is installed, and also the member that constitutes the framework (frame) of the portion of terminal of semiconductor light-emitting elements not being installed or insulating body being strengthened can be included to set.Similarly, the volume of back metal member both can be set by the member of the scope corresponding with the front metal member, also can strengthen being included to set with the member of framework with constituting the member of portion of terminal or constituting insulating body.Constitute the member of the portion of terminal that semiconductor light-emitting elements is not installed or constitute the member that insulating body strengthens using framework, both can also can be constituted by different materials by constituting with front metal member or back metal member identical materials.
The back metal member with respect to the volume ratio of front metal member preferably in 50% to 120% scope near 100%.If volume ratio is less than 50%, then the difference of the thermal capacity of the front metal member that causes because of volume and back metal member will become greatly, thereby be difficult to prevent the warpage of insulating body.If volume ratio surpasses 120%, therefore the temperature height (about 1050 ℃) when then front metal member and back metal member being engaged in insulating body can produce warpage to the mode of table side protrusion in slow cooling with central portion to normal temperature.The position that the back metal member is fixed with respect to light-emitting device is difficult to be close to.
The front metal member is set with the pattern of the configuration of abideing by semiconductor light-emitting elements.The back metal area of members is greater than the front metal area of members, so the thickness of back metal member is thinner than the thickness of front metal member.Thickness by making the front metal member is greater than the thickness of back metal member, and makes the volume of front metal member become the degree identical with the volume of back metal member.Expansion by reducing to follow front metal member that variations in temperature produces and back metal member and contraction poor is to suppress the warpage that insulating body produces.
The part of front metal member comprises the rectangular band-like portions along the peripheral part of insulating body.The band-like portions of front metal member play a role as the reinforced frame of the peripheral part of insulating body, therefore prevent the whole warpage of substrate, and prevent from producing the crack at peripheral part.These band-like portions are to avoid terminal part set on the peripheral part of substrate and arrange.That is, when substrate when to be rectangle and terminal along the minor face of substrate dispose, band-like portions are to be configured to, along the long limit of avoiding terminal and respectively symmetry.Do not enlarge substrate, but effectively utilize the dead space (dead space) of the table side of substrate, to strengthen substrate.Band-like portions both can form continuously in the entire circumference of substrate, and the part is formed intermittently.The band-like portions of front metal member are as long as bring into play function as reinforced frame.Therefore, these band-like portions both can with the front metal member that semiconductor light-emitting elements be used for to be installed simultaneously, formed by identical metal material, also can be in other operations be formed by the metal of other materials.
And in light-emitting device, insulated substrate has the fixedly hole of usefulness of screw, and has the rib in the part that is included in the front metal member around the hole on surface.The part of front metal member be configured in as rib the hole around, so this rib brought into play the effect of the reinforced frame in hole,, prevents that when holding screw the crack from producing that is.Rib both can jointlessly form around the hole continuously, also can form intermittently the part.And, rib is in the front metal member of the reinforced frame that is formed for the front metal member of semiconductor light-emitting elements being installed as electrode portion or being constituted peripheral part as band-like portions, formed by identical metal material, perhaps in other operations, formed by other members.
The light-emitting device of another execution mode comprises insulating body, front metal member, back metal member and the semiconductor light-emitting elements of pottery system.Insulating body to surface that semiconductor light-emitting elements is installed and with this surface be that the back side of opposition side defines.The front metal member directly engages or is packaged on the surface of insulating body with the pattern that sets.The front metal member comprises weld pad (pad) and power supply.Weld pad supports at least 1 semiconductor light-emitting elements.Power supply possesses portion of terminal, and this portion of terminal is disposed at the peripheral part of insulating body, semiconductor light-emitting elements is supplied with the electric power that distributes.The back metal member possesses the fixed part that more extends along the back side of insulating body than the outer peripheral edges of insulating body integratedly, and directly engages or be packaged on the back side of insulating body.Fixed part is formed with the screw penetrating part.Insulating body, front metal member and back metal member constitute substrate.Semiconductor light-emitting elements is installed on the weld pad of front metal member, and is electrically connected at power supply.
Power supply forms from outstanding toward the outer side tab (tab) such as the circumference of the insulating body of pottery etc.Perhaps, in the part of insulating body the opening portion that is made by hole or groove is set, and forms power supply in the mode of stopping up this opening portion.
When the edge portion of back metal member gives prominence to from the perimembranous of the insulating body of pottery system, form the screw penetrating part that is used as fixed part in this edge portion.The edge portion of back metal member forms the size roughly the same with insulating body with the zone except fixed part, that is, have only fixed part outstanding from the perimembranous of insulating body.The edge portion of the back metal member of the recess that will be exposed to the perimembranous of incision insulating body and make is as fixed part.The back metal member is not limited to thickness and is fixing flat board.The back metal member forms porose or slit (slit) corresponding to the pattern of front metal member.That is, corresponding to the density distribution of the pattern of front metal member and form porose or otch.
This light-emitting device directly engages or is packaged on the back side of insulating body with the back metal member, so can use not thick tabular back metal member.With the back metal member be that one and the fixed part that is formed with the screw penetrating part have substrate is fixed at required full intensity such as the member for mount of fin etc.Fixed part protrudes from the perimembranous of the insulating body of pottery system, therefore need not make screw pass insulating body and just substrate can be fixed in member for mount.Fixed part is to be one with the back metal member, does not therefore need other parts for fixed part.Therefore, can not increase the part number and substrate can be fixed at member for mount, and can coping screw fastening and to cause insulating body to take place damaged.
Above light-emitting device not only be suitable for do from the facility of office that ceiling throws light on totally and so on or the light source of the relatively large ligthing paraphernalia of professional usefulness, and be suitable for the ligthing paraphernalia used as ordinary residence etc. the compact illumination utensil, have the light source of ligthing paraphernalia of lamp (lamp) form of lamp holder.The ligthing paraphernalia of professional usefulness such as office or facility can combine a plurality of light-emitting devices and be made into strip or big flat board (panel) shape.Compare with ligthing paraphernalia with business, the ligthing paraphernalia that small-sized ordinary residence is used can be made of 1 light-emitting device.
Ligthing paraphernalia possesses: become the light-emitting device of light source, lamp circuit or the power circuit that has the housing of heat sinking function and be used for making the led chip of light-emitting device to light a lamp.Light-emitting device makes the contact of back metal member and is fixed in the thermal transfer surface of preparing on the housing.Between hardware and the thermal transfer surface, fill the paste (paste) or the silicone lubricating oil that are used for promoting the heat transmission overleaf.Housing is the material manufacturing by excellent thermal conductivity, namely, be that (polybutylene terephthalate PBT) waits manufacturing to polybutylene terephthalate (PBT) by the metal of steel plate, stainless steel (stainless steel), aluminium etc. or synthetic resin with thermal endurance, light resistance and electrical insulating property.Lamp circuit and power circuit convert alternating voltage 100V direct voltage 24V to and are supplied to led chip.Lamp circuit and power circuit are to be disposed in the housing, or separate with housing and arrange.And lamp circuit also can have the dimming function that the brightness of making or illuminant colour change.
Light-emitting device makes the thickness of back metal member thinner than the thickness of front metal member, and the volume ratio of front metal member with respect to the back metal member is made as more than 50%.Thus, light-emitting device suppresses to cause the warpage that insulating body produces in manufacture process because of front metal member and back metal area of members difference.And, if this light-emitting device make the back metal member lay area greater than the front metal area of members, then can further reduce the warpage that insulating body produces in manufacture process.
The band-like portions that form on the peripheral part of insulating body are included in the part of front metal member, and band-like portions are brought into play function as the reinforced frame of the peripheral part of insulating body, therefore prevent the warpage of insulating body, and prevent from producing the crack at peripheral part.Set rib is included in the front metal member around the installing hole of the fastening usefulness of screw, and rib is brought into play function as the reinforced frame of installing hole, therefore prevents from producing the crack from installing hole.
The light-emitting device of another form passes screw and directly engages or be engaged in the screw penetrating part of the fixed part that the back metal member at the insulating body back side forms by sealing-in, thereby substrate is fixed in member for mount.Light-emitting device obtains can not to increase the part number and substrate can be fixed at the structure of member for mount.Even screw is fastening stronger, breakage can not take place in the insulating body of pottery system yet.And this light-emitting device has the fixed part that forms as the part of back metal member.Thereby can not increase the part number, when being fixed at member for mount, need not worry to make the insulating body of pottery system to take place damaged.
Below, light-emitting device and the ligthing paraphernalia of the 1st to the 5th execution mode described.
Structure to the light-emitting device 10 of the 1st execution mode describes.Light-emitting device 10 shown in Figure 1A is to constitute as the light-emitting diode (LED) of semiconductor light-emitting elements 13 in the installation of DCB substrate.Light-emitting device 10 comprises as shown in Figure 1B: the insulating body 11 of pottery system, be formed at front metal member 12 made of copper on the surperficial 11A of insulating body 11, constituted and be installed on the semiconductor light-emitting elements 13 on the front metal member 12 and be formed at back metal member 14 made of copper on the back side 11B of insulating body 11 by LED.Substrate 111 is made of insulating body 11, front metal member 12 and back metal member 14.
Insulating body 11 is the pottery system for semiconductor light-emitting elements 13 is arranged, and is the rectangular flat board of nitrogenize aluminum in this example.Front metal member 12 is formed at the surface of insulating body 11 in order to constitute Wiring pattern.In Figure 1A, at four jiaos of insulating body 11, be formed with at the fixing installing hole 11C of the fastening usefulness of screw of light-emitting device 10 of the housing 21 of the ligthing paraphernalia 20 shown in Fig. 2 A.
Semiconductor light-emitting elements 13 is installed on surface at front metal member 12.Semiconductor light-emitting elements 13 is made of led chip.Prepare a plurality of semiconductor light-emitting elements 13 with identical performance.In the present embodiment, each semiconductor light-emitting elements 13 is to be made of high brightness, the high blue led chip of exporting.The semiconductor light-emitting elements 13 of a plurality of bluenesss is arranged and respectively is equipped with 2 with the matrix at interval with approximate equality on each weld pad 12a, 12b.In this example, substrate is the DCB substrate, so semiconductor light-emitting elements 13 is to adopt about the about 1mm in one side and the jumbo led chip of 1.1W～1.5W.
Each semiconductor light-emitting elements 13 of installing on the front metal member 12 is covered by the containment member 15 that is mixed with yellow fluorophor in transparent silicone resin as shown in Figure 1B.Semiconductor light-emitting elements 13 by blueness excites yellow fluorophor, to send sodium yellow.The sodium yellow that this light-emitting device 10 sends yellow fluorophor mixes with the blue light that semiconductor light-emitting elements 13 sends, to send white light.Semiconductor light-emitting elements 13 is connected in each weld pad 12a, 12b by closing line (bonding wire) W of gold thread, and 4 each semiconductor light-emitting elements 13 each 2 ground are connected in series.
And the thickness of slab that the back side 11B of the insulating body 11 of pottery system goes up the front metal member 12 made of copper that forms on the surface of back metal member 14 made of copper than insulating body 11 that forms is thinner.This back metal member 14 is the continuous flat board of one shown in Fig. 1 C, and utilizes scolding tin and be engaged in the back side 11B of insulating body 11.
In the light-emitting device 10 with DCB substrate, with respect to the volume of front metal member 12, the volume of back metal member 14 is made into more than 50%.In the present embodiment, insulating body 11, front metal member 12, back metal member 14 constitute following size and volume.
In Figure 1A, the weld pad 12a shown in the left side makes thickness of slab constitute about 0.25mm, area is about 40mm
2, the weld pad 12b of central authorities makes thickness of slab and left side similarly be made as about 0.25mm, area constitutes about 60mm
2, the weld pad 12c on right side makes thickness of slab be made as about 0.25mm, area constitutes about 20mm
2, that is, the thickness of slab of front metal member 12 is about 0.25mm, makes the gross area constitute about 120mm
2And the thickness of slab of back metal member 14 is to be made as the about 0.2mm thinner than the thickness of slab of front metal member 12, makes area constitute about 140mm
2Insulating body 11 is to be that about 0.25mm, area are the about 322mm bigger than the copper coin of back metal member 14 by thickness of slab
2Aluminium nitride constitute, and shown in Fig. 1 C, to have engaged back metal member 14 in the mode in the residual blank of periphery (blank) zone.
Volume based on the front metal member 12 of above-mentioned size is about 30mm
3, the volume of back metal member 14 is about 28mm
3 Back metal member 14 is about 93% with respect to the volume ratio of front metal member 12, constitutes as more than 50% and near 100% of target.
In the present embodiment, the thickness of slab of front metal member 12 is fixed, and the thickness of slab that makes back metal member 14 forms the thickness of slab that is thinner than front metal member 12, namely, by adjusting thickness of slab and the surface area of back metal member 14, form near 100% mode with respect to the volume ratio of front metal member 12 with back metal member 14, with the warpage of control (control) insulating body 11.
So, constitute light-emitting device 10 in the following manner, namely, be copper coin by front metal member 12 and back metal member 14 are made as identical materials, thereby the coefficient of thermal expansion on the two sides of the insulating body 11 of elimination pottery system is poor, and about 93% by back metal member 14 is made as with respect to the volume ratio of front metal member 12, thereby do one's utmost to eliminate thermal capacity poor on the two sides of insulating body 11.Its result, light-emitting device 10 suppresses the warpage that insulating body 11 produces because of heat.
According to this light-emitting device 10, in manufacture process, when semiconductor light-emitting elements 13 was installed on front metal member 12, even be exposed under about about 300 ℃ hot environment, substrate also was difficult to take place warpage by chip join (die bonding).And the problem of operability variation also is improved in manufacture process.
To have DCB substrate and profile be rectangle and be laminal light-emitting device 10 as shown in Figure 2, is loaded in the housing 21 of ligthing paraphernalia 20.This ligthing paraphernalia 20 is with the Down lamp (down light) of light-emitting device 10 as the little shape of light source, by above-mentioned light-emitting device 10, fixedly the housing 21 of light-emitting device 10 and the ignition device 22 that light-emitting device 10 is lit a lamp constitute.
Light-emitting device 10 utilization pass insulating body 11 around set installing hole 11C everywhere screw and be anchored on demarcation strip 21a, thereby fixed in that back metal member 14 made of copper positively is close under the state on the tabular surface of demarcation strip 21a of aluminum.Because warpage does not take place the substrate of light-emitting device 10,, does not produce the gap between insulating body 11 and demarcation strip 21a that is, therefore insulating body 11 can not produce the crack when spiral shell is solid.Because back metal member 14 is close to demarcation strip 21a, thus semiconductor light-emitting elements 13 produce heat will efficient be distributed to demarcation strip 21a well by back metal member 14.
In this light-emitting device 10, front metal member 12 is divided along its length.Therefore, even the flatness of demarcation strip 21a is poor, and under the situation that insulating body 11 shifting grounds are fixed, owing to can flexibly follow, therefore be difficult to produce the crack, and can fix closely.
Becoming on the ceiling X of the face of being set up, the ligthing paraphernalia 20 of 1 this Down lamp shape is being set, perhaps, with cable (cable) a plurality of these ligthing paraphernalias 20 are being connected to each other and arrange by feeding.With among Fig. 2 A with forming the circular power line of joining cloth in the H of hole that arranges at ceiling X and be connected in power supply terminal platform 24 shown in some chain lines.The side is crooked inwardly to make strutting piece 26 with hand, its front end and housing 21 is together inserted arrange after the H of hole, from strutting piece 26 relieving hands.Strutting piece 26 restores by the elasticity of self and is crimped on the inner face that hole H is set, so housing 21 remains and makes escutcheon 25 be connected to the state of ceiling X.Under this state, the otch that hole H is set is covered by escutcheon 25.
When ligthing paraphernalia 20 is lit a lamp, reflect from the be reflected reflecting surface 23b of body 23 of the light of each semiconductor light-emitting elements 13 outgoing, be conical shaped and towards the diffuse underneath radiation, to carry out point-like (spot) illumination.At this moment, the light from semiconductor light-emitting elements 13 radiation is reflected at each weld pad 12a, 12b of front metal member 12, the lip-deep metal of 12c by platings such as nickel, silver, gold.And insulating body 11 is made of the pottery of white, and thus, the surface of insulating body 11 also can be reflected light, so ligthing paraphernalia 20 can carry out the few illumination of light loss.
And front metal member 12 and back metal member 14 are that the copper of excellent thermal conductivity becomes, and insulating body 11 also is that the pottery with thermal conductivity is made, and then housing 21 also is that the aluminium by excellent thermal conductivity is formed.The heat that each semiconductor light-emitting elements 13 produces is passed to back metal member 14 from front metal member 12 by insulating body 11, is passed to housing 21 via the thermal transfer surface of demarcation strip 21a again, and distributes towards the outside of ligthing paraphernalia 20.That is, heat is distributed to the outside effectively from the sidewall of the big housing 21 of surface area.
And weld pad 12a, 12b, the 12c that the front metal member 12 of semiconductor light-emitting elements 13 is installed disposes along the length direction of insulating body 11.The heat that semiconductor light-emitting elements 13 produces thus, is more effectively dispelled the heat along the length direction of the big substrate of thermal capacity and transmit.Therefore and light-emitting device 10 is the states that constitute no warpage, is fixed in that back metal member 14 positively is close under the state of demarcation strip 21a of housing 21.Since few towards the hot transmission loss of demarcation strip 21a from back metal member 14, therefore can dispel the heat effectively.
The light-emitting device 10 of the 1st execution mode constitutes, making back metal member 14 is about 93% with respect to the volume ratio of front metal member 12, and do one's utmost to eliminate thermal capacity poor on the two sides of insulating body 11, prevent positively that therefore the insulating body 11 of pottery system from because of heat warpage taking place.At this moment, be that copper become with back metal member 14 for same material by making front metal member 12, eliminated coefficient of thermal expansion poor on the two sides of insulating body 11, so the insulating body 11 of light-emitting device 10 is difficult to Yin Re and warpage takes place.
And then, make the thickness of back metal member 14 form the thickness that is thinner than front metal member 12, namely, thickness with front metal member 12 is thickness and the surface area that benchmark is adjusted back metal member 14, and the volume that makes back metal member 14 with respect to the ratio of the volume of front metal member 12 near 100%, control the warpage of insulating body 11 with this.Owing to there is not complicated Wiring pattern, and only utilize the change in size of the simple back metal member 14 that constitutes the heat transmission flat board to control, therefore be easy to carry out the adjustment of volume ratio, easily near desired volume ratio, that is the manufacturing excellence of this light-emitting device 10.
Even light-emitting device 10 is exposed to hot environment in manufacture process, insulating body 11 also is difficult to take place warpage, prevents that positively insulating body 11 from because of heat warpage taking place.And light-emitting device 10 is improved, thus in manufacture process easy operating.Because the substrate of light-emitting device 10 warpage can not take place, therefore can between the back metal member 14 of substrate and demarcation strip 21a, not form the gap.When spiral shell was solid, insulating body 11 was difficult to produce the crack.And because back metal member 14 is to be close to demarcation strip 21a, so the heat of semiconductor light-emitting elements 13 is effectively distributed.Its result, the illumination of ligthing paraphernalia 20 brightens.
The light-emitting device 10 of the 2nd execution mode is described with reference to Fig. 3 A, Fig. 3 B, Fig. 3 C.For the structure that has with light-emitting device 10 identical functions of the 1st execution mode, the mark symbol identical with the 1st execution mode in each figure, and the record in reference the 1st execution mode.In this light-emitting device 10, back metal member 14 is divided as shown in Fig. 3 B and Fig. 3 C.That is, shown in Fig. 3 B and Fig. 3 C, back metal member 14 is divided into 3 places at the back side of the insulating body 11 of pottery system and disposes, and along the length direction of substrate and alignment arrangements.Shown in Fig. 3 B and Fig. 3 C, back metal member 14 is corresponding to the pattern of the front metal member 12 on the surface that is configured in insulating body 11, each block (block) 14a, 14b, 14c that constitutes back metal member 14 at the middle section of insulating body 11 alongst and adjacent with interval S and is engaged in insulating body 11 by scolding tin.
The interval S of each block 14a, 14b, 14c avoids the position corresponding with semiconductor light-emitting elements 13 and disposes.Thus, the heat that produces from semiconductor light-emitting elements 13 is passed to back metal member 14a, 14b, the 14c of the opposition side that is positioned at insulating body 11 with short thermally conductive pathways.Even back metal member 14 is cut apart, radiating efficiency can not change yet.In addition, when interval S is positioned at the positive back side of semiconductor light-emitting elements 13, can form the space at the dorsal part of semiconductor light-emitting elements 13, so thermal resistance becomes big and the radiating efficiency variation.Especially, if combined with the low insulating body 11 of thermal conductivity, then the heat of semiconductor light-emitting elements 13 will be difficult to diffusion in insulating body 11, so the radiating efficiency extreme difference that can become.
Light-emitting device 10 respectively is equipped with 2 semiconductor light-emitting elements 13 on weld pad 12a, 12b, by adding up to 4 semiconductor light-emitting elements 13 to constitute illuminating part A.Also can 1 semiconductor light-emitting elements be installed at 1 front metal member, constitute the illuminating part A that realizes high outputization by disposing more semiconductor light-emitting elements.
The light-emitting device 10 of the 3rd execution mode is described with reference to Fig. 4 A, Fig. 4 B and Fig. 5.For the structure that has with light-emitting device 10 identical functions of the 1st execution mode, the symbol that mark is identical in each figure and with reference to the explanation in the 1st execution mode, and omit herein explanation.In the 3rd execution mode, shown in Fig. 4 A, a plurality of weld pad 12g that become the front metal member are arranged in the surface of the rectangular insulating body 11 of pottery system.This weld pad 12g disposes 5 row along the length direction of insulating body 11, and dispose 4 row in the direction of intersecting with this length direction, thereby be roughly equally spaced rectangular and dispose the sum 20 weld pad 12g, these weld pads 12g is engaged in the surface of insulating body 11 by scolding tin.On each weld pad 12g, with the above-mentioned plating nickel (Ni) for anti-oxidation similarly.Also can replace nickel and plating gold (Au) or silver (Ag) etc.
Each the weld pad 12g that is the matrix arrangement forms shown in Fig. 4 A, become slick and sly chamfering (chamfer) as overlooking corner (corner) 12g1 that is foursquare edge (edge) part, thereby integral body forms roughly octagon.Shown in Fig. 4 B and Fig. 5 A, weld pad 12g has roughly trapezoidal at the thickness direction of insulating body 11, that is, from tapered portion (taper) 12g4 of top 12g2 towards bottom 12g3 expansion, and utilize scolding tin to make bottom 12g3 be engaged in the surface of the insulating body 11 of pottery system.
1 semiconductor light-emitting elements 13 is installed in the substantial middle part of the top 12g2 of each weld pad 12g.The light-emitting device 10 of this execution mode possesses and is the rectangular rectangular DCB substrate that adds up to 20 semiconductor light-emitting elements 13 that is arranged with on the surface of insulating body 11.The DCB substrate can form thicker than the weld pad 12g made of copper that forms Wiring pattern.Therefore, the zone 120 that does not dispose weld pad 12g in Fig. 5 A becomes darker groove relatively.Shown in Fig. 5 B, if the zone 120 be the groove of rectangular section, then the part of the light that radiates from semiconductor light-emitting elements 13 will be imported in this groove.
Relative therewith, the weld pad 12g of the light-emitting device 10 of the 3rd execution mode is formed with tapered portion 12g4 at complete cycle as shown in Fig. 5 A, and therefore, the part of light is reflexed among Fig. 5 A in up the light emission direction by tapered portion 12g4 shown in arrow among Fig. 5 A.Being sidelong the light of penetrating from semiconductor light-emitting elements 13 towards insulating body 11 can not be imported in the groove and emitted.The luminous efficiency of light-emitting device 10 is improved.
And weld pad 12g makes corner 12g1 form slick and sly chamfering, does not therefore have acute angle, is difficult to electrolysis and concentrates.When for anti-oxidant and when the surface of weld pad 12g carried out plating, because acerous, therefore, being prevented of migration (migration) phenomenon that is caused by the metal of nickel or silver etc.The decline of the insulation resistance between weld pad 12g is suppressed, thereby safe light-emitting device 10 is provided.And, owing to make corner 12g1 form slick and sly chamfering, so the distance between the weld pad 12g of adjacency is elongated, can positively realize being electrically insulated.
In the light-emitting device 10 of the 3rd execution mode, weld pad 12g made of copper utilizes scolding tin and is engaged in insulating body 11.Weld pad 12g also can constitute by etching.At this moment, as long as be that thick copper layer carries out etching to the feature of DCB substrate, etching face just can become the chevron shown in Fig. 5 A, thereby automatically forms tapered portion 12g4 at the complete cycle of weld pad 12g.Come the part of light is reflected by this tapered portion 12g4.
The light-emitting device 10 of the 4th execution mode is described with reference to Fig. 6 A, Fig. 6 B and Fig. 6 C.For the structure that has with light-emitting device 10 identical functions of the 1st execution mode, the identical symbol of mark in each figure, and with reference to the record of the correspondence in the 1st execution mode, and omit herein explanation.
The difference of the light-emitting device 10 of the 4th execution mode and the light-emitting device 10 of the 1st execution mode is the structure of front metal member 12.Front metal member 12 comprises weld pad 12a, 12b, 12c, band-like portions 12d, rib 12e and power supply 12f.By band-like portions 12d and rib 12e are set, the intensity of light-emitting device 10 are improved, thereby prevent the warpage of substrate.
The light-emitting device 10 of the 4th execution mode as shown in Figure 6A, the part of front metal member 12 made of copper is located at the peripheral part of insulating body 11 as band-like portions 12d.Band-like portions 12d is positioned at weld pad 12a, 12b, 12c separately on the common limit in opposite directions, namely, be arranged in Fig. 6 A insulating body 11 by upper limb and edge on the lower, its length is striden and each front metal member 12a, 12b, 12c, and along the length direction of insulating body 11.Band-like portions 12d be have with each weld pad 12a, 12b each other the set usefulness that is electrically insulated interval S identical distance and dispose, and be engaged in the surface of insulating body 11 by scolding tin.On the surface of this each band-like portions 12d, also for anti-oxidant and plating nickel (Ni) etc.
These band-like portions 12d brings into play following effects by the peripheral part of being located at insulating body 11.Band-like portions 12d arranges along the length direction of insulating body 11, therefore will alleviate the warpage of substrate self.And, when solid and when the insulating body 11 of pottery system is fixed in housing 21 grades by spiral shell, because the influence of the flatness on the warpage of case side or surface etc., stress easily concentrates on the weld pad 12a of front metal member 12, the marginal portion of 12b, that is the marginal portion shown in the arrow C and produce the crack among Fig. 6 A, Fig. 6 B.
According to this example, be dispersed by the local stress that is set to the band-like portions 12d of reinforced frame, makes to concentrate on the edge part C among Fig. 6 A and Fig. 6 B.Thereby the edge part C at weld pad 12a, 12b is difficult to produce the crack.
And around the more weak relatively substrate of intensity, especially the periphery of substrate is brought into play the effect of reinforced frame, also can prevent the generation in the crack of peripheral part.And band-like portions 12d utilizes the dead space on the insulating body 11 and disposes.Need not add large substrates for reinforced frame is set.
And, in this example, spiral shell admittedly usefulness installing hole 11C around be formed with rib 12e in the part that is included in front metal member 12.Namely, with respect to four jiaos of formed 4 spiral shells of insulating body 11 installing hole 11C of usefulness admittedly, respectively to surround the mode on every side in hole, and the interval that has the usefulness of being electrically insulated between other front metal members 12a that rib 12e is configured in adjacency, 12b, 12c, 12d, and this rib 12e is engaged in the surface of insulating body 11 by scolding tin.On the surface of this each rib 12e, equally also plating is useful on oxidation resistant nickel (Ni) etc.
This rib 12e establishes in the mode on every side of surrounding installing hole 11C, brings into play following effects thus.That is, rib 12e makes stress obtain disperseing to avoid it to concentrate on the spiro-fixing part position when utilizing screw that insulating body 11 is fixed in housing etc.The effect of set rib 12e performance reinforced frame around the installing hole 11C, the stress that makes the part be applied to installing hole 11C obtains disperseing, and therefore prevents from producing the crack at spiro-fixing part and periphery thereof.
The light-emitting device 10 of the 4th execution mode has the power supply 12f that constitutes pair of terminal portion on the surface of insulating body 11.On the minor face of the insulating body 11 that rectangular pottery is made, open the interval of the usefulness that is electrically insulated and be disposed between weld pad 12a, 12b, band-like portions 12d, the rib 12e of adjacency constituting the power supply 12f sky of foursquare portion of terminal roughly, and this power supply 12f is engaged in the surface of insulating body 11 by scolding tin.On the surface of this each power supply 12f, also with other parts of front metal member 12 similarly plating be useful on oxidation resistant nickel (Ni) etc.
The rib 12e of the reinforced frame of the band-like portions 12d of the reinforced frame of the peripheral part of formation substrate, formation installing hole 11C and the power supply 12f of formation portion of terminal are with for weld pad 12a, 12b that semiconductor light-emitting elements 13 is installed similarly, are made of the copper of thickness of slab by about 0.25mm.And power supply 12f is the surface that is engaged in insulating body 11 with weld pad 12a, 12b simultaneously by scolding tin.
On these front metal members 12, with weld pad 12a, 12b similarly, cover its surface and the metal of plating nickel, silver, gold etc.Be sidelong the light reflection of penetrating to the light emission side by making from semiconductor light-emitting elements 13 towards insulating body 11, luminous efficiency is improved.Insulating body 11 is strengthened by the band-like portions 12d and the rib 12e that are included in the front metal member 12, but so thickness of slab of attenuate insulating body 11.The heat of semiconductor light-emitting elements 13 is able to efficient and is passed to back metal member 14 well.
In the light-emitting device 10 of the 4th execution mode, constitute and to comprise the band-like portions 12d that becomes reinforced frame and the front metal member 12 of rib 12e, thus the peripheral part of insulating body 11 or installing hole around strengthened.Prevent that insulating body 11 from producing the crack, and by effectively utilizing these reinforced frames, easily the volume ratio of back metal member 14 with respect to front metal member 12 is adjusted into more than 50%.Light-emitting device 10 utilizes simple structure and method to prevent the warpage of substrate self.
By increasing the area of front metal member 12, make back metal member 14 with respect to the volume ratio of front metal member 12 near 1, therefore easily prevent the warpage of the insulating body 11 that the difference because of volume causes.When constituting the structure that reinforced frame etc. is not set, and the volume of front metal member 12 arranges band-like portions 12d or rib 12e during less than back metal member 14 with effectively appending.When constituting the structure that reinforced frame etc. is not set, and the volume of front metal member 12 is during greater than back metal member 14, if append band-like portions 12d or rib 12e, it is excessive that the cumulative volume of front metal member 12 will become.At this moment, as long as strengthen thickness or the laying area of back metal member 14.If strengthen the laying area of back metal member 14, then the radiating effect of insulating body will improve.
The light-emitting device 10 of the 4th execution mode has the power supply 12f that constitutes portion of terminal, and shown in Fig. 6 C, has also strengthened the area of back metal member 14.The thickness of slab of back metal member 14 is to be similarly about 0.2mm with the 1st execution mode.Back metal member 14 is about 95% with respect to the volume ratio of front metal member 12, near 100%.Because the difference of the thermal capacity on the two sides of insulating body 11 tails off, so light-emitting device 10 easily prevents the warpage that insulating body 11 takes place because of heat.The light-emitting device 10 of the 4th execution mode is along the length direction of insulating body 11 and be provided with band-like portions 12d, so the warpage of substrate diminishes.
The light-emitting device 10 of the 2nd execution mode to the 4 execution modes is used the light-emitting device 10 of the ligthing paraphernalia 20 shown in mapping 2A and Fig. 2 B.
The ligthing paraphernalia 100 of the light-emitting device 10 that possesses the 5th execution mode is described with reference to Fig. 7 to Figure 16.Fig. 7～ligthing paraphernalia 100 shown in Figure 10 is the spotlights (spotlight) with 2 light-emitting devices 10.This ligthing paraphernalia 100 comprises 2 light-emitting devices 10, member for mount 3, concave mirror 4 and mirror supporting member 5.Light-emitting device 10 is chip on board (chip on board, COB) type, and as Figure 11～shown in Figure 14, have substrate 111, become led chip 131, frame member 16 and the translucent sealing 18 etc. of a plurality of semiconductor light-emitting elements.
In utilizing the direct joint of DCB method, form the cupric oxide tunicle in the one side of front metal member 12 made of copper and back metal member 14, and this cupric oxide tunicle is disposed towards the insulating body 11 of pottery system.Utilize heating furnace, heat with the temperature lower and higher than the melt temperature of cupric oxide tunicle than the melt temperature of copper, the joint interface at front metal member 12 made of copper and back metal member 14 and the ceramic insulating body of making 11 forms the eutectic fused mass thus.By this eutectic fused mass, front metal member 12 and back metal member 14 are engaged in installed surface 11A or the back side 11B of insulating body 11.
The front metal member 12 that directly is engaged in installed surface 11A constitutes by being divided into rectangular a plurality of weld pad 12p.As shown in figure 15, each weld pad 12p is corresponding to the arrangement of a plurality of led chips 131, and be configured to square arrange equally spaced arrange rectangular.Power supply 12q sky is opened fixing gap (gap) and is disposed at the both sides in the zone of the weld pad 12p that arranges among Figure 15.
The power supply 12q that coincides with the scope of installed surface 11A directly is engaged in installed surface 11A.The free end of each the power supply 12q that protrudes as the crow flies toward the outer side from the installed surface 11A of insulating body 11 is used as power supply terminal 12r.Power supply terminal 12r towards the thickness direction change position of insulating body 11, but extends with installed surface 11A as shown in figure 14 abreast.Power supply terminal 12r also can be towards the thickness direction of insulating body 11 and to the direction bending away from installed surface 11A, and then at its front end, forms crank (crank) shape towards the direction bending parallel with installed surface 11A.
The light-emitting device 10 of the 5th execution mode is set side by side with the LED series circuit that multiple row is connected in series with led chip 131.Light-emitting device 10 shown in Figure 15 is connected in parallel in power supply 12q with 5 LED series circuits that are connected in series with 7 led chips 131.For each LED series circuit is powered, disposing a pair of power supply 12q in two outsides in the zone of weld pad 12p.All led chips 131 also can be connected in series and be powered.At this moment, power supply 12q be adjacent to series circuit two ends weld pad 12p and dispose.
The weld pad 12p of front metal member 12 and power supply 12q are in the following sequence and form the pattern that determines on the surface of the installed surface 11A of insulating body 11.At first, utilizing the metal die of press, will have a slice metal sheet of the thickness of homogeneous, is that copper sheet material (sheet) is struck out the pattern that is predetermined in the 5th execution mode.The copper sheet material that will stamp out engages by eutectic or interface such as diffusion bond and directly be engaged in installed surface 11A.Implement after plating handles the electric bridge portion of excision to connecting between the weld pad 12p of the copper sheet material that is engaged in installed surface 11A and the power supply 12q.Thus, form independently weld pad 12p and power supply 12q.
Back metal member 14 directly is engaged in the back side 11B of insulating body 11 by the DCB method.Back metal member 14 be for prevent substrate 111 in manufacturing process warpage and establish in order to dispel the heat.Back metal member 14 covers the roughly whole zone of the back side 11B of insulating body 11 as shown in figure 12.14 one-tenth flat condition of this back metal member, and as Figure 11～shown in Figure 13, in many places, be to have fixed part 14C integratedly at two places in the 5th execution mode.
As the metal material of sheet and directly be engaged in weld pad 12p, the power supply 12q of the front metal member 12 of insulating body 11 and the thickness of back metal member 14 is to select in the scope of 200 μ m～500 μ m, in order to reach target thickness by they directly are engaged in insulating body 11.Front metal member 12 and back metal member 14 far are thicker than metallization layer, therefore have mechanical strength.
The thickness of back metal member 14 is thinner than the thickness of the power supply 12q of front metal member 12.When making substrate 111 by the DCB method, in case the temperature of substrate 111 drops to till the normal temperature because of after directly joint rises, then exist front metal member 12 sides to become protruding and tendency that the change of back metal member 14 sides is recessed.The thickness of back metal member 14 is that the pattern corresponding to front metal member 12 decides, and to suppress substrate 111 warpages takes place.
Each led chip 131 can use the semiconductor light-emitting elements of various illuminant colours.In the 5th execution mode, adopt the led chip that sends blue light.Led chip 131 is semiconductor bare chip (bare chip), as shown in figure 14, gives device substrate 131a, semiconductor light emitting layer 131b and element electrode 131c stacked and constitutes.Device substrate 131a is the megohmite insulant made by sapphire (sapphire) etc.Semiconductor light emitting layer 131b is laminated on the device substrate 131a, sends monochromatic blue light.Element electrode 131c is made of a pair of positive pole and negative pole, and is formed on the semiconductor light emitting layer 131b.
In order in the installed surface 11A of insulating body 11 side led chip 131 to be installed, the face of device substrate 131a that is laminated with the opposition side of semiconductor light emitting layer 131b is individually fixed in each weld pad 12p by die-bond material 17.Die-bond material 17 is resin binders of silver paste or transparent silicone resin etc.
Each led chip 131 is to install in being heated to about 300 ℃ environment.At this moment, by to the weld pad 12p of front hardware 12 and the power supply 12q area shared with respect to the installed surface 11A of insulating body 11, adjust with the difference of back metal member 14 area shared with respect to the back side 11B of insulating body 11, with the warpage of control substrate 111.That is, according to poor based on the front metal member 12 on the surface that is engaged in insulating body 11 and the back metal member 14 that is engaged in back side 11B area and the volume (volume) that converts of thickness separately, suppress the warpage of insulating body 11.Front metal member 12 forms the pattern that is made of weld pad 12p and power supply 12q, so area is less than back metal member 14.If front metal member 12 is identical with the thickness of back metal member 14, then measurable substrate 111 will become protruding and mode generation warpage that 11B side change in the back side is recessed with the installed surface 11A side of insulating body 11.Therefore, make the thickness of back metal member 14 be thinner than the thickness of front metal member 12.
When adjusting the thickness of back metal member 14 not with respect to front metal member 12, the warpage that can't allow might take place in substrate 111, till the operation that led chip 131 is installed.In case warpage takes place in substrate 111, will be difficult to the thickness of suitable managing chip welding material 17.If the thickness of die-bond material 17 is heterogeneous body, then led chip 131 may be installed bad.The heat that produces during installing inadequately that led chip 131 fully makes that led chip 131 lights a lamp is distributed to weld pad 12p via die-bond material 17 ability will descend.So the luminescent properties of led chip 131 descends, the life-span also shortens.
If led chip 131 light a lamp during warpage takes place, the central portion that should be close to the substrate 111 of radiating component may be away from radiating component.The heat transfer process of the part of peeling off from radiating component reduces, and forms so-called heat spot (heat spot).The luminescent properties of led chip 131 that is formed with the part of heat spot will descend, and the lost of life.The light-emitting device 10 of the 5th execution mode is thinner than the weld pad 12p of front metal member 12 and the thickness of power supply 12q by the thickness that makes back metal member 14, thus will be before substrate 111 be installed led chips 131 and make that led chip 131 lights a lamp during the warpage of substrate 111 suppress for less.The substrate 111 of light-emitting device 10 takes place to be cut down above the fault of the warpage of allowance, so the quality of light-emitting device 10 improves.
As Figure 14 and shown in Figure 15, the element electrode 131c of each led chip 131 and weld pad 12p and power supply 12q electrically connect by closing line W.At this moment, wherein the element electrode 131c of a utmost point is connected in the weld pad 12p that this led chip 131 is installed by closing line W, and the element electrode 131c of another utmost point is connected in another weld pad 12p with the weld pad 12p adjacency that led chip 131 is installed by closing line W.The connection and the led chip 131 that connects is one another in series via closing line W and weld pad 12p.
The element electrode 131c of led chip 131 that is positioned at an end of LED coupled in series chip alignment is connected in power supply 12q with the weld pad 12p adjacency that this led chip 131 is installed by closing line W, and the weld pad 12p that the led chip 131 of the other end that is positioned at the led chip row is installed is connected in another power supply 12q by closing line W.A plurality of led chips are listed between the power supply 12q of the both sides of the direction that these row extend and are being connected in parallel.
As Figure 11 and shown in Figure 14, light-emitting device 10 has a part of surrounding weld pad 12p and power supply 12q and the frame member 16 that disposes.Frame member 16 has that side is within it held each led chip 131 of being installed on weld pad 12p and the height of closing line W that each led chip 131 is connected, and this frame member 16 is bonded on the installed surface 11A of substrate 111.
Led chip 131 and closing line W utilization are filled to the containment member 18 of the inboard that is surrounded by frame member 16 and bury underground.Containment member 18 is transparent resin systems, is transparent silicone resin system in the 5th execution mode, and contains fluorophor in inside.Fluorophor radiates the light of particular color when the exciting an of part that is subjected to the blue light that led chip 131 radiates.Under the situation of the 5th execution mode, in containment member 18, with predefined interpolation than and rub into the yellow fluorophor that excites the radiation sodium yellow with respect to the blue light of led chip 131 radiation being arranged, excite the red-emitting phosphors of radiation red light or exciting the green-emitting phosphor of radiation green light.
The light-emitting device 10 of above structure is installed in the member for mount 3 of ligthing paraphernalia 100 as shown in Figure 9.As Fig. 9 and shown in Figure 10, member for mount 3 possesses fin 31 and the portion 35 of being heated that constitutes housing.In the time of beyond being applicable to ligthing paraphernalia shown in Figure 7 100, member for mount 3 also can be metal housing.In ligthing paraphernalia 100, the side that illuminating light is radiated is defined as " front " or " preceding ", and its opposition side is defined as " back side " or " back ".
The portion 35 of being heated has with the thickness of base 32 to be the cuboid with the thickness of degree.This portion 35 of being heated is consubstantiality not with fin 31, and is installed in radiating fin 33 with respect to base 32 and is the front of opposition side.The portion 35 of being heated contacts the front of base 32 as shown in Figure 9, and the connecting piece 34 of a plurality of screws by being inserted into base 32 from radiating fin 33 sides etc. is linked to fin 31.Being heated portion 35 also can be integrally formed with base 32.
The portion of being heated 35 on the base 32 of being fixed on, and arranges with radiating fin 33 along the radially extension of this base 32 abreast by the center of base 32.As shown in figure 10, corresponding to installation be heated portion 35 the position and have the connect apertures 32a of 34 break-through of connecting piece.
Light-emitting device 10 is fixed on respect to the front of base 32 and vertically disposes in the portion of being heated 35 of heating surface 35b.These light-emitting devices 10 towards heating surface 35b, and as shown in figure 10, insert back metal member 14 between back metal members 14 and the heating surface 35b with thermally-conductive sheet 36 and fix.Each light-emitting device 10 utilizes the screw that passes the screw reach through hole 14D of fixed part 14C and be installed in the portion of being heated 35 to fix.
As shown in figure 10, the portion 35 of being heated has hiding groove 35a at each heating surface 35b.Power supply terminal 12r is configured on the position that coincide with this hiding groove 35a.The insulation covered electric cable that is connected in power supply terminal 12r is equipped on to be hidden in the groove 35a.Thermally-conductive sheet 36 is soft silicone resin systems of excellent thermal conductivity.Even substrate 111 is because of variations in temperature warpage slightly because thermally-conductive sheet 36 is flat, thereby this thermally-conductive sheet 36 will seamlessly contact heating surface 35b and substrate 111 back metal member 14 the two.Owing to be inserted with thermally-conductive sheet 36, so the heat that light-emitting device 10 produces will be passed to heating surface 35b from back metal member 14 under the less situation of transmission loss.
The substrate 111 that is fixed at the light-emitting device 10 in the portion of being heated 35 of member for mount 3 is DCB substrates, and it possesses the back metal member 14 of the back side 11B of the insulating body 11 that directly is engaged in the pottery system.This hardware 14 uses the copper sheet material of the thickness of 200 μ m～500 μ m.The fixed part 14C that forms with back metal member 14 has full intensity required when substrate 111 is fixed at the portion 35 of being heated.Fixed part 14C is the part at the back metal member 14 of the perimembranous more lateral of insulating body 11 extension.That is, do not make screw pass the insulating body 11 of pottery system, and screw is installed on the screw reach through hole 14D of fixed part 14C, the substrate 111 of light-emitting device 10 can be installed in the portion of being heated 35 thus.
The back metal member 14 that is formed with fixed part 14C that screw reach through hole 14D is used as the screw penetrating part and is with the substrate 111 that becomes the DCB substrate is one.Therefore, not increasing the part number just can the solid substrate 111 of spiral shell.And the screw that is fixed in the portion of being heated 35 for the substrate 111 with light-emitting device 10 does not pass the insulating body 11 of pottery system, even therefore the tightening torque of screw is superfluous slightly, it is damaged that insulating body 11 also is not easy generation.
As Fig. 7～shown in Figure 10, concave mirror 4 is to be made of a pair of concave mirror member of doing with aluminum 41.The reflecting surface of each concave mirror member 41 forms parabola as shown in Figure 9, and minute surface has been carried out fine finishining.Concave mirror member 41 has the edge 41a of the semicircle arcuation that is positioned at light exit side and is positioned at the 41b of seat portion of base 32 sides of fin 31 as shown in figure 10.The 41b of seat portion forms along the flat condition of base 32, and has otch 41c.Concave mirror member 41 makes a front of the base 32 of the 41b of portion contact heat spreader 31 as shown in Figure 9, and by the screw 42 in the fixing hole 32c that is installed in base 32 in the mode that covers otch 41c, and be fixed in base 32.The screw 42 that is used for concave mirror member 41 is fixed in base 32 is before base 32 is installed the portion 35 of being heated, and is installed in the fixing hole 32c.
The a pair of concave mirror member 41 of face side that is fixed in fin 31 to light-emitting device 10, and is that the border is face and is disposing symmetrically with this portion 35 of being heated in the two sides of the portion of being heated 35.Become light-emitting device 10 illuminating part, add the containment member 18 that fluorophor is arranged be the reflecting surface that constitutes with parabola by concave mirror member 41 in opposite directions.Light-emitting device 10 as shown in figure 15, be positioned at the central part P of the illuminating part of light-emitting device 10 concave mirror member 41 the focus place mode and disposing.
The center of the light beam that radiates from ligthing paraphernalia 100 along radial direction away from the end of the portion of being heated 35, utilize screw and the mirror spare 45 of pressure fixedly arranged from face side.Press mirror spare 45 to have the 45a of installation sheet portion that is connected to the portion of being heated 35 and the 45b of patch portion that bends along reflecting surface integratedly.A pair of concave mirror member 41 owing between be inserted with the portion of being heated 35 reflecting surface correspondingly separated.When the 45a of installation sheet portion was fixed at the portion 35 of being heated, the 45b of patch portion was disposing in the mode of stopping up the gap between the concave mirror member 41.Thus, as Fig. 7 and shown in Figure 8, the front-end edge 45c of the edge 41a of concave mirror member 41 and the 45b of patch portion forms the shape that is approximately circular.
The mirror supporting member 5 of the outer cover of double as concave mirror 4 is the support 5b formation that loudspeaker (horn) shape is expanded as Fig. 9 and shown in Figure 10 by columnar base portion 5a and from the one end.Support 5b be diameter greater than the cone-shaped of base portion 5a, and as shown in Figure 8, rounded when observing from face side.Mirror supporting member 5 bumps to the front of base 32 base portion 5a, and makes the peripheral part back side of support 5b contact concave mirror 4, thereby is maintained between the perimembranous of base 32 and concave mirror 4.Mirror supporting member 5 supports concave mirror 4 from dorsal part.
When this ligthing paraphernalia 100 was lit a lamp, each led chip 131 of light-emitting device 10 was luminous.Adding has the containment member 18 of fluorophor to be subjected to the exciting of light of led chip 131 and to send white light.The light that containment member 18 radiates is reflected with this illuminating part concave mirror member 41 in opposite directions, towards the light emission direction of ligthing paraphernalia 100 and outgoing.The projective patterns of the light that is reflected by this a pair of concave mirror member 41 is circular, and these patterns roughly coincide on irradiation object with respect to the ligthing paraphernalia 100 that becomes spotlight and enough far away.
The temperature of the substrate 111 of light-emitting device 10 is along with lighting a lamp of ligthing paraphernalia 100 changes with light-off.Ligthing paraphernalia 100 light a lamp during because the heat that produces of each led chip 131, the temperature of substrate 111 and the portion 35 of being heated rises.At this moment, the be heated thermal expansion of portion 35 is bigger than the thermal expansion of the insulating body 11 of the pottery system of substrate 111.Substrate 111 is pressed into the heating surface 35b of the portion of being heated 35 because of this thermal expansion difference, towards away from the direction of heating surface 35b protruding distortion taking place.And the thermal expansion of the insulating body 11 of pottery system is bigger directly to be engaged in the thermal expansion of back metal member 14 made of copper of back side 11B of insulating body 11.Therefore, protruding distortion takes place because of this thermal expansion difference towards the direction away from the heating surface 35b of the portion of being heated 35 in substrate 111.
The light-emitting device 10 of the ligthing paraphernalia 100 of the 5th execution mode does not make screw pass insulating body 11, but makes screw pass the screw reach through hole 14D of fixed part 14C set on the back metal member 14, thereby substrate 111 is fixed in the portion of being heated 35.Owing to do not bear load on the insulating body 11 of pottery system, so breakage can not take place because of spiro-fixing part in insulating body 11.
As model (model), the amount of warpage that produces when making the DCB substrate is simulated (simulation) with 1/4 part of the light-emitting device 10 of the 5th execution mode shown in Figure 15.The physics value of the insulating body 11 of pottery system is to be made as, Young's modulus 354000[MPa], Poisson's ratio (Poisson ratio) 0.26, coefficient of linear expansion 7.09 * 10-6, thermal conductivity 0.024[W/mm ℃].And the physics value that is front metal member 12 made of copper and back metal member 14 is to be made as, Young's modulus 130000[Mpa], Poisson's ratio 0.343, coefficient of linear expansion 17.7 * 10
-6, thermal conductivity 0.398[W/mm ℃].
And, the thickness of insulating body 11 is made as fixing 0.25mm, and 6 models that the thickness of front metal member 12 and back metal member 14 is changed are respectively tested.As the temperature conditions of manufacturing process, suppose that temperature is changed to situation till the simulation eutectic joint technology (process) 300 ℃ from 25 ℃ of room temperatures, with respect to the center of substrate 111, the deflection of substrate 111 integral body is carried out numerical analysis.
According to analysis result, the volume of front metal member 12 is shown in Figure 16 with respect to the relation between the total deformation of the ratio of the volume of back metal member 14 and substrate 111.According to this Figure 16 as can be known be, in volume ratio was scope more than 0.7 and below 1.07, volume ratio was more near 1.00, the warpage of substrate 111 is more little.If this volume ratio is converted into back metal member 14 with respect to the volume of front metal member 12, then volume ratio is 93%～140% scope, the amount of warpage of substrate can be controlled in allowed band.
In the amount of warpage of the substrate of the light-emitting device 10 of the 1st execution mode relation with respect to front metal member 12 and the volume ratio of back metal member 14, be known that, as long as hardware is thickness and the surface area of adjusting back metal member 14 in 50% to 100% the scope with respect to the volume ratio of front metal member 12 overleaf, just can be with the amount of warpage control of substrate in allowed band.At this moment, volume ratio is more near 100%, and the warpage of substrate is more few.
Be based on the result of the 1st execution mode and the Simulation result of the 5th execution mode, so to say that: even the pattern of the weld pad of front metal member or power supply is different, the amount of substrate warp is no change almost also.Hardware is in 50%～140% the scope with respect to the volume ratio of front metal member overleaf, can be with the amount of warpage control of substrate in allowed band.At this moment, if volume ratio is near 100%, then the amount of warpage of substrate is few.
The above, it only is preferred embodiment of the present invention, be not that the present invention is done any pro forma restriction, though the present invention discloses as above with preferred embodiment, yet be not in order to limit the present invention, any those skilled in the art, in not breaking away from the technical solution of the present invention scope, when the structure that can utilize above-mentioned announcement and technology contents are made a little change or be modified to the equivalent embodiment of equivalent variations, but every content that does not break away from technical solution of the present invention, any simple modification that foundation technical spirit of the present invention is done above embodiment, equivalent variations and modification all still belong in the scope of technical solution of the present invention.
Claims (9)
1. light-emitting device is characterized in that comprising:
The insulating body of pottery system;
The surface of described insulating body is cut apart and be disposed to the front metal member;
Light source is installed on the described front metal member; And
The back metal member is located at the back side of described insulating body,
Described front metal member comprises:
The 1st front metal member, described light source are installed on described the 1st front metal member; And
The 2nd front metal member, the mode that is electric insulation with described the 1st front metal member arranges at interval, and has at least a part to be provided in a side of the peripheral part of described insulating body.
2. light-emitting device according to claim 1 is characterized in that, described front metal member and described back metal member are electric insulations.
3. light-emitting device according to claim 1 and 2 is characterized in that, described back metal member is more than 50% with respect to the volume ratio of described front metal member.
4. light-emitting device according to claim 3 is characterized in that,
Described back metal area of members is greater than described front metal area of members.
5. light-emitting device according to claim 3 is characterized in that, the thickness of described back metal member is below the thickness of described front metal member.
6. light-emitting device according to claim 4 is characterized in that, the thickness of described back metal member is below the thickness of described front metal member.
7. light-emitting device according to claim 5 is characterized in that, the thickness of described back metal member is identical with the thickness of described front metal member.
8. light-emitting device according to claim 6 is characterized in that, the thickness of described back metal member is identical with the thickness of described front metal member.
9. a ligthing paraphernalia is characterized in that comprising that at least one is used as light source according to each described light-emitting device in the claim 1 to 8.
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009-242119 | 2009-10-21 | ||
| JP2009242119A JP2011091135A (en) | 2009-10-21 | 2009-10-21 | Light emitting module and lighting system |
| JP2009-266558 | 2009-11-24 | ||
| JP2009266558A JP5375552B2 (en) | 2009-11-24 | 2009-11-24 | LIGHT EMITTING DEVICE AND LIGHTING APPARATUS HAVING THE SAME |
| CN2010105188061A CN102074558B (en) | 2009-10-21 | 2010-10-20 | Light-emitting device and lighting appliance |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010105188061A Division CN102074558B (en) | 2009-10-21 | 2010-10-20 | Light-emitting device and lighting appliance |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103325778A true CN103325778A (en) | 2013-09-25 |
| CN103325778B CN103325778B (en) | 2016-08-10 |
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| CN2010105188061A Expired - Fee Related CN102074558B (en) | 2009-10-21 | 2010-10-20 | Light-emitting device and lighting appliance |
| CN201310175659.6A Expired - Fee Related CN103325778B (en) | 2009-10-21 | 2010-10-20 | Light-emitting device and ligthing paraphernalia |
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| CN2010105188061A Expired - Fee Related CN102074558B (en) | 2009-10-21 | 2010-10-20 | Light-emitting device and lighting appliance |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103715190A (en) * | 2012-09-28 | 2014-04-09 | Lg伊诺特有限公司 | Luminescence device |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5746930B2 (en) * | 2011-08-24 | 2015-07-08 | 株式会社小糸製作所 | Vehicle lighting |
| US8950897B2 (en) * | 2011-11-21 | 2015-02-10 | Panasonic Corporation | Light-emitting device and lighting apparatus |
| KR20140047750A (en) * | 2012-10-09 | 2014-04-23 | 엘지이노텍 주식회사 | Luminescence device |
| JP6638282B2 (en) * | 2015-09-25 | 2020-01-29 | 三菱マテリアル株式会社 | Light emitting module with cooler and method of manufacturing light emitting module with cooler |
| EP3905346B1 (en) * | 2018-12-27 | 2024-02-14 | Denka Company Limited | Light-emitting substrate, and lighting device |
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| US20060044803A1 (en) * | 2004-09-02 | 2006-03-02 | Custom Interconnect Ltd. | LED light source |
| US20070205419A1 (en) * | 2006-03-02 | 2007-09-06 | Masato Ono | Semiconductor device and its manufacturing method |
| US20080099770A1 (en) * | 2006-10-31 | 2008-05-01 | Medendorp Nicholas W | Integrated heat spreaders for light emitting devices (LEDs) and related assemblies |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4804109B2 (en) * | 2005-10-27 | 2011-11-02 | 京セラ株式会社 | LIGHT EMITTING DEVICE WIRING BOARD, LIGHT EMITTING DEVICE, AND LIGHT EMITTING DEVICE WIRING BOARD MANUFACTURING METHOD |
| JP2008109079A (en) * | 2006-09-26 | 2008-05-08 | Kyocera Corp | Wiring board for surface mounting type light-emitting element, and light-emitting device |
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2010
- 2010-10-20 CN CN2010105188061A patent/CN102074558B/en not_active Expired - Fee Related
- 2010-10-20 CN CN201310175659.6A patent/CN103325778B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060044803A1 (en) * | 2004-09-02 | 2006-03-02 | Custom Interconnect Ltd. | LED light source |
| US20070205419A1 (en) * | 2006-03-02 | 2007-09-06 | Masato Ono | Semiconductor device and its manufacturing method |
| US20080099770A1 (en) * | 2006-10-31 | 2008-05-01 | Medendorp Nicholas W | Integrated heat spreaders for light emitting devices (LEDs) and related assemblies |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103715190A (en) * | 2012-09-28 | 2014-04-09 | Lg伊诺特有限公司 | Luminescence device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103325778B (en) | 2016-08-10 |
| CN102074558B (en) | 2013-06-19 |
| CN102074558A (en) | 2011-05-25 |
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