CN1033253C - Circuit and method for driving IGBT - Google Patents

Circuit and method for driving IGBT Download PDF

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Publication number
CN1033253C
CN1033253C CN93105096A CN93105096A CN1033253C CN 1033253 C CN1033253 C CN 1033253C CN 93105096 A CN93105096 A CN 93105096A CN 93105096 A CN93105096 A CN 93105096A CN 1033253 C CN1033253 C CN 1033253C
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China
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mentioned
voltage
resistance
igbt
time constant
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Expired - Fee Related
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CN93105096A
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CN1081796A (en
Inventor
松本吉弘
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Fuji Electric Co Ltd
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Fuji Electric Co Ltd
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/0406—Modifications for accelerating switching in composite switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H03K17/0412—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0828—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in composite switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/168—Modifications for eliminating interference voltages or currents in composite switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electronic Switches (AREA)
  • Power Conversion In General (AREA)

Abstract

A first resistance (R1) and a Zener diode (ZD1) in series are connected across a second resistance (R2) between the positive terminal of a forward bias voltage source (Ef) and the collector of one transistor (Tc1) of the opto-coupler (2). The second resistance is the greater so that in combination with the gate-to-emitter capacitance of the UGBT (1) it defines a longer time constant. While the transistor (Tc1) conducts the IGBT is controlled by the greater of the two voltages. ADVANTAGE - Reduces rate of variation of collector-emitter voltage during switching-off, and minimises collector power loss during switching and stationary operation.

Description

The circuit of driving IGBT and method
The present invention relates to the circuit and the method for driving IGBT, it can reduce collector electrode during the IGBT shutoff operation---the rate of change of emitter voltage and reduce handover operation and stable operation during collector dissipation.
Fig. 1 is the circuit block diagram of the IGBT grid excitation method of routine.
In Fig. 1, digital 1 indication is an IGBT (IGBT Insu-lated Gate Bipolar Transistor); 2 is optical coupler.Optical coupler receives the connection/close command signals S to IGBT D, connect transistor T in the optical coupler 2 in the mode of complementation according to command signal C1And T C2Transistorized output is through resistance R 7Be connected to the grid of IGBT1.The grid voltage V of IGBT1 GAt forward bias E fWith reverse biased E rBetween change, as shown in Figure 2.
More particularly, as command signal S for IGBT1 DBe when connecting order, transistor T C1Connect transistor T C2Cut off, make grid voltage V GAccording to a time constant T GFrom reverse biased E rRise to forward bias E f, this time constant is defined as grid and electrostatic capacitance C between the emitter and the resistance R of IGBT1 7The product CR of resistance value R.
Generally speaking, in the making operation of IGBT, need to reduce collector electrode---emitter voltage V CERate of change dV CE/ dt and reduce stable operation and handover operation during collector dissipation P C, collector dissipation P wherein CBy collector current i cWith voltage V CEProduct provide.Reduce collector dissipation P CCan realize grid voltage V in this operation by making operation fast GIncrease to very big at short notice.Yet rate of change dV in this case CE/ dt has but increased, and has a negative impact on other equipment, such as the misoperation and the analogue of optical coupler 2.On the contrary, increase grid voltage V gradually GExtremely less final value can reduce rate of change dV CE/ dt, however collector dissipation has but increased in this case.
Fig. 3 to Fig. 5 B has illustrated this relation.
Fig. 3 represents a certain arm of a phase inverter electric bridge, and it comprises two groups of antiparallel IG-BT and free rotating diode, and promptly IGBT1 and FWD1 are one group, and IGBT2 and FWD2 are one group, and these two groups connect with series system.This figure has illustrated the IGBT1 of connection upper arm and has made the collector current i shown in the dotted line cState when beginning to flow, current i shown in the solid line at this moment FwDThe diode FWD2 of underarm flows through.
Fig. 4 A and 4B have illustrated the conducting operating period collector current i of IGBT1 shown in Figure 3 c, grid voltage V G, collector electrode---emitter voltage V CEAnd collector dissipation P CWaveform, grid voltage V wherein GChange as shown in Figure 2.Collector dissipation is by collector current i cWith voltage V CEProduct determine.Time t N1The moment that transition state is finished, stable state begins of expression conducting operation.Collector dissipation P CAt conducting operation time started t 0To time t N1Time integral S in interval 11And at time t N1Time integral S afterwards 21Be illustrated respectively in the power loss on the inherent IGBT1 collector electrode of corresponding time interval.Symbol theta 1Representative voltage V CEThe rate of stating that reduces, promptly suitable angle with turn-on rate.
Fig. 5 A and 5B illustrated with Fig. 4 A and 4B in the waveform of corresponding composition, they be by keep with Fig. 4 A and 4B in identical reverse biased E rWith time constant T GAnd reduction forward bias E fThereby reduced grid voltage V GExcursion obtain.
In Fig. 4 A～4B, θ 1＜θ 2, i.e. voltage V in Fig. 5 A CERate of change dV CE/ dt little than among Fig. 4 A, time t in Fig. 5 B N2Collector dissipation P afterwards CThan time t among Fig. 4 B N1Collector dissipation afterwards is big.Correspondingly, the power loss during stable state has increased, i.e. S 21＜S 22
Like this, there is a problem in the conventional grid excitation method of IGBT, promptly is difficult to simultaneously with rate of change dV CE/ dt and collector dissipation P CReduce to desirable value.
Therefore the object of the invention is to provide a kind of circuit and method of driving IGBT, and it can reduce collector electrode during the IGBT shutoff operation---the rate of change of emission collecting voltage and reduce handover operation and stable operation simultaneously during collector dissipation.
A first aspect of the present invention provides a kind of circuit of driving IGBT, comprising:
Be used to produce first device of the first control voltage, this voltage according to very first time constant to the first final value change in voltage;
Be used to produce second device of the second control voltage, to the second final value change in voltage, the second final value voltage is greater than the first final value voltage according to second time constant for this voltage, and second time constant is greater than very first time constant; And
The greater of the first control voltage and the second control voltage is offered the device of IGBT grid.
Here, first device can comprise one first resistance, and this resistance is with the grid of IGBT---and the emitter electrostatic capacitance forms first time constant together, also comprises first voltage source of connecting with first resistance, and its voltage output equals the first final value voltage; And
Second device can comprise one second resistance, and this resistance is with the grid of IGBT---and the emitter electrostatic capacitance forms second time constant together, also comprises second voltage source of connecting with second resistance, and its voltage output equals the second final value voltage.
Electric supply installation can comprise a resistance, and its first end is connected to first resistance and second resistance through a switching device shifter, and its second end is connected to the grid of IGBT.
Switching device shifter can be an optical coupler.
Second voltage source can comprise a direct voltage source, and first voltage source can comprise a direct voltage source and a Zener diode that is series at this voltage source.
First device can comprise first buffer amplifier that is connected between first voltage source and first resistance, second device can comprise that is connected in second buffer amplifier between second voltage source and second resistance, electric supply installation can be connected to first resistance and second resistance grid of IGBT jointly, at this, the control end of the first slow middle amplifier and second buffer amplifier is connected to switching device shifter through a resistance jointly.
Switching device shifter can be an optical coupler.
Second voltage source can comprise a direct voltage source, and first voltage can comprise a direct voltage source and a Zener diode that is series at this voltage source.
Second aspect present invention provides a kind of method of driving IGBT, comprises following each step:
Produce the first control voltage, its according to very first time constant to the first final value change in voltage;
Produce the second control voltage, to the second final value change in voltage, the second final value voltage is greater than the first final value voltage, and second time constant is greater than very first time constant according to second time constant for it; And
Provide in the first control voltage and the second control voltage the greater to the grid of IGBT.
According to the present invention, the grid voltage of IGBT equals first voltage during the IGBT blending operation, also equals the second voltage (see figure 7) during the steady state operation of IGBT.First change in voltage is faster than second voltage, thus the rate of change of first voltage compare with the rate of change of second voltage and reduce sooner, the final value voltage of second voltage is higher than first voltage.Thereby IGBT is by first voltage control, the rate of change of this voltage less than blending operation during the rate of change of second voltage, IGBT is also by second voltage control, this voltage is higher than first voltage during the steady state operation.Can reduce collector electrode simultaneously like this---the rate of change (dV of emitter voltage CE/ dt) and the collector dissipation P of IGBT C
Above-mentioned and other purpose of the present invention, effect, characteristic and advantage will be clearer and more definite by following explanation and accompanying drawing thereof to the enforcement body.
Circuit block diagram among Fig. 1 has illustrated conventional IGBT grid pumping circuit;
Fig. 2 has illustrated the grid voltage V of IGBT1 among Fig. 1 GWaveform;
Circuit block diagram among Fig. 3 shows a certain arm of the electric bridge of phase inverter.
Fig. 4 A and 4B have illustrated collector current i during the making operation of IGBT1 shown in Figure 3 c, grid voltage V G, collector electrode---emitter voltage V CEAnd collector dissipation P CWaveform, grid voltage V wherein GChange as shown in Figure 2.
Fig. 5 A and 5B illustrated with Fig. 4 A and 4B in the waveform of corresponding composition, they be by keep with Fig. 4 A and 4B in identical reverse biased E rWith time constant T GAnd only reduce forward bias E fThereby reduce little grid voltage V GExcursion obtain.
Fig. 6 is the circuit block diagram of first embodiment according to the invention.
Fig. 7 has illustrated the grid voltage V of IGBT among Fig. 6 GWaveform; And
Fig. 8 is the circuit block diagram according to second embodiment of the present invention.
Referring now to description of drawings the present invention.
Embodiment 1
Fig. 6 is the circuit block diagram of first embodiment according to the invention.Custom circuit shown in it and Fig. 1 be different from following some:
(1) by resistance R 1, R 2With Zener diode ZD 1The circuit of forming is connected forward bias potential source E fWith transistor T in the optical coupler 2 C1Collector electrode between.Here, Zener diode ZD 1With resistance R 1The series connection, this series circuit again with resistance R 2In parallel.In addition, resistance R 2Resistance value greater than resistance R 1Resistance value.
(2) resistance R among Fig. 1 7By resistance R 3Replace.
Like this, be created as two paths for forward biased current: article one path is through Zener diode ZD 1, resistance R 1, transistor T C 1And resistance R 3The second path is through resistance R 2, transistor T C 1And resistance R 3
The forward bias of first path is less than the forward bias of alternate path, and difference is across Zener diode ZD 1Voltage.In addition, because two paths are connected in the grid of IGBT1 and the electrostatic capacitance C between the emitter jointly, and resistance R 1Resistance value less than resistance R 2So, the time constant T of first path G1Time constant T less than alternate path G2
Voltage between the electrostatic capacitance C two ends equals the grid voltage V of IGBT1 G, can obtain as Fig. 7.Among Fig. 7, V G1Be the grid voltage that first path produces, V G2It is the grid voltage that alternate path produces.Grid voltage V GAcquisition is two grid voltage V G1And V G2Between bigger voltage.Because record two grid voltages, they are at time t N3The place intersects, and grid voltage is expressed as follows:
V G＝V G1(t 0－t n3)
=V G2(t N3Afterwards)
Thereby during blending operation, IGBT is by first voltage V G1Control, the rate of change of this voltage is less than second voltage V G2Rate of change; During steady state operation, IGBT is by second voltage V G2Control, this voltage is higher than first voltage V G1Can reduce collector electrode simultaneously like this---the rate of change (dV of emitter voltage CE/ dt) and the collector dissipation P of IGBT C
Embodiment 2
Fig. 8 is the circuit block diagram according to second embodiment of the present invention.Second embodiment is different from first embodiment shown in Figure 6, and it includes buffer transistor T 1And T 2Be used to amplify the forward bias current of first and second paths of flowing through.What connect therewith is to comprise a Zener diode ZD 2And resistance R 4-R 6Circuit, as shown in Figure 8.The class of operation of second embodiment is similar to first embodiment.
The present invention is described in detail according to various embodiment.By aforementioned, the present invention will be significantly for this technical field those skilled in the art, and its change carried out and change are not broken away from the present invention aspect more wide.Therefore, the present invention has covered whole changes and the change within essential idea of the present invention.

Claims (9)

1. the circuit of a driving IGBT is characterized in that comprising:
Be used to produce first device of the first control voltage, this voltage according to very first time constant to the first final value change in voltage;
Be used to produce second device of the second control voltage, to the second final value change in voltage, the above-mentioned second final value voltage is greater than the above-mentioned first final value voltage according to second time constant for this voltage, and above-mentioned second time constant is greater than above-mentioned very first time constant; And
The above-mentioned first control voltage is offered first generator of the grid of above-mentioned IGBT, and
When the above-mentioned second control voltage surpasses the first control voltage, the second above-mentioned control voltage is offered second generator of the grid of above-mentioned IGBT.
2. according to the circuit of claim 1, it is characterized in that:
Above-mentioned first device comprises first resistance, this resistance forms above-mentioned very first time constant together with grid-emitter electrostatic capacitance of above-mentioned IGBT, also comprise one first voltage source, its output voltage equals the above-mentioned first final value voltage and connects with above-mentioned first resistance; And
Above-mentioned second device comprises second resistance, this resistance forms above-mentioned second time constant together with above-mentioned grid-emitter electrostatic capacitance of above-mentioned IGBT, also comprise second voltage source, its output voltage equals the above-mentioned second final value voltage and connects with above-mentioned second resistance.
3. according to the circuit of claim 2, it is characterized in that:
Above-mentioned electric supply installation comprises a resistance, and its first end is connected to above-mentioned first resistance and above-mentioned second resistance through a switching device shifter, and its second end is connected to the grid of above-mentioned IGBT.
4. according to the circuit of claim 3, it is characterized in that:
Above-mentioned switching device shifter is an optical coupler.
5. according to the circuit of claim 3, it is characterized in that:
Above-mentioned second voltage source comprises a direct current baric flow, and above-mentioned first voltage source comprises a direct current voltage source and a Zener diode that is series at above-mentioned direct voltage source.
6. according to the circuit of claim 2, it is characterized in that:
Above-mentioned first device comprises first buffer amplifier that is connected between above-mentioned first voltage source and above-mentioned first resistance, above-mentioned second device comprises second buffer amplifier that is connected between above-mentioned second voltage source and above-mentioned second resistance, above-mentioned electric supply installation is connected to above-mentioned first resistance and above-mentioned second resistance grid of above-mentioned IGBT jointly, at this, the control end of above-mentioned first buffer amplifier and above-mentioned second buffer amplifier is connected to above-mentioned switching device shifter through a resistance jointly.
7. according to the circuit of claim 6, it is characterized in that:
Above-mentioned switching device shifter is an optical coupler.
8. according to the circuit of claim 6, it is characterized in that:
Above-mentioned second voltage source comprises a direct current voltage source, and above-mentioned first voltage source comprises a direct current voltage source and a Zener diode that is series at above-mentioned direct voltage source.
9. the method for a driving IGBT is characterized in that comprising following step:
Produce the first control voltage, its according to very first time constant to the first final value change in voltage;
Produce the second control voltage, its according to second time constant to the second final value change in voltage; The above-mentioned second final value voltage is greater than the above-mentioned first final value voltage, and above-mentioned second time constant is greater than above-mentioned very first time constant; And
Provide in above-mentioned first control voltage and the above-mentioned second control voltage the greater to the grid of above-mentioned IBGT.
CN93105096A 1992-05-08 1993-05-06 Circuit and method for driving IGBT Expired - Fee Related CN1033253C (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP4115044A JP3049938B2 (en) 1992-05-08 1992-05-08 IGBT gate drive method
JP115,044/1992 1992-05-08

Publications (2)

Publication Number Publication Date
CN1081796A CN1081796A (en) 1994-02-09
CN1033253C true CN1033253C (en) 1996-11-06

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CN93105096A Expired - Fee Related CN1033253C (en) 1992-05-08 1993-05-06 Circuit and method for driving IGBT

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JP (1) JP3049938B2 (en)
CN (1) CN1033253C (en)
DE (1) DE4315253A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11133796B2 (en) 2016-03-11 2021-09-28 Ford Global Technologies, Llc Dynamic IGBT gate drive to reduce switching loss

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1049536C (en) * 1997-01-20 2000-02-16 深圳市华为电气股份有限公司 Gate drive method and circuit of high-power IGBT in full-bridge circuit
JP2012090435A (en) * 2010-10-20 2012-05-10 Mitsubishi Electric Corp Drive circuit and semiconductor device equipped with the same

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4949213A (en) * 1988-11-16 1990-08-14 Fuji Electric Co., Ltd. Drive circuit for use with voltage-drive semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11133796B2 (en) 2016-03-11 2021-09-28 Ford Global Technologies, Llc Dynamic IGBT gate drive to reduce switching loss

Also Published As

Publication number Publication date
JP3049938B2 (en) 2000-06-05
DE4315253A1 (en) 1993-11-11
JPH05315917A (en) 1993-11-26
CN1081796A (en) 1994-02-09

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