CN103320018A - Additive for crystalline silicon polishing solution and application method thereof - Google Patents
Additive for crystalline silicon polishing solution and application method thereof Download PDFInfo
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- CN103320018A CN103320018A CN2013102398305A CN201310239830A CN103320018A CN 103320018 A CN103320018 A CN 103320018A CN 2013102398305 A CN2013102398305 A CN 2013102398305A CN 201310239830 A CN201310239830 A CN 201310239830A CN 103320018 A CN103320018 A CN 103320018A
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Abstract
The invention discloses an additive for a crystalline silicon polishing solution, and the additive is composed of alkyl indican, pyrazine, polyethylene glycol and water. In the process of carrying out surface polishing on silicon wafers, the additive disclosed by the invention is added into an alkaline solution, so that an excellent polishing effect can be achieved.
Description
Technical field
The present invention relates to a kind of additive and using method thereof of crystalline silicon polishing fluid.
Background technology
In the manufacture craft of crystal-silicon solar cell, silicon chip is carried out polished backside have following advantage: 1. optical gain goes back the infrared light reflection in the sunlight, thereby makes cell piece absorb more light, thereby the short-circuit current of cell piece is improved; 2. back surface field is even, thereby improves the open circuit voltage of cell piece; 3. back of the body contact improves, and can make the improvement that contacts of silicon chip back side and aluminium paste, reaches good ohmic contact; 4. significant passivation effect combines the efficient that can significantly improve cell piece with passivating back.
Used finishing method mainly contains following three kinds at present: the first is nitric acid, hydrofluoric acid and sulfuric acid polishing, but the silicon wafer polishing poor effect after the polishing of this method, and simultaneously environmental pollution is more serious; The second is the concentrated base polishing, and wherein the concentration of sodium hydroxide or potassium hydroxide is more than 20%, utilizes the silicon chip effect after this method is polished also not good, and technique is unstable simultaneously; The third is 25% tetramethyl ammonium hydroxide solution polishing, utilize the silicon wafer polishing effect of this method polishing better, but cost is high, and the simultaneous reactions time is long, is about 10-15min.Therefore, be necessary to develop the polishing additive under low alkaline concentration, the polishing effect of silicon chip is improved, cost is low simultaneously, and the reaction times is short, thereby improves the production capacity of cell piece, improves simultaneously the photoelectric transformation efficiency of cell piece.
Summary of the invention
The object of the present invention is to provide a kind of additive and using method thereof of crystalline silicon polishing fluid, it is characterized in that, when silicon chip is carried out surface finish, additive of the present invention is joined in the basic solution, can reach excellent polishing effect.
The invention provides a kind of additive for the crystalline silicon polishing fluid, be comprised of alkyl glycoside, pyrazine, polyoxyethylene glycol and water, wherein said water is preferably deionized water.
Preferably, described additive is comprised of 2～5 weight part alkyl glycoside, 1～3 weight part pyrazine, 0.5～2 weight part polyoxyethylene glycol and 100 weight parts waters.
Particularly preferred, described additive is comprised of 2～3 weight part alkyl glycoside, 1～2 weight part pyrazine, 0.5～1 weight part polyoxyethylene glycol and 100 weight parts waters.
The present invention provides a kind of compound method of crystalline silicon polishing fluid in addition, comprises the steps:
(1) sodium hydroxide, potassium hydroxide or Tetramethylammonium hydroxide are dissolved in the deionized water, obtain basic solution; The weight percentage of described sodium hydroxide, potassium hydroxide is 2～5%; The weight percentage of described Tetramethylammonium hydroxide is 3～7%;
(2) with in the basic solution in the additive adding step of the present invention (1), obtain polishing fluid, the weight ratio of wherein said additive and basic solution is 1～5:100.
Preferably, the weight percentage of described sodium hydroxide, potassium hydroxide is 3～4%; The weight percentage of described Tetramethylammonium hydroxide is 4～6%; The weight ratio of described additive and basic solution is 1.5～2.5:100.
The present invention also provides a kind of crystalline silicon finishing method, and additive of the present invention is added in the basic solution, then monocrystalline or polysilicon chip is immersed in the polishing fluid that contains additive and polishes, and during polishing, temperature is 75～85 ℃, and polishing time is 3～5min.
Preferably, the weight ratio of described additive and basic solution is 1～5:100.
Preferably, described basic solution makes by sodium hydroxide, potassium hydroxide or Tetramethylammonium hydroxide are dissolved in the deionized water; The weight percentage of described sodium hydroxide, potassium hydroxide is 2～5%; The weight percentage of described Tetramethylammonium hydroxide is 3～7%.
Particularly preferred, the weight percentage of described sodium hydroxide, potassium hydroxide is 3～4%; The weight percentage of described Tetramethylammonium hydroxide is 4～6%.
Advantage of the present invention and beneficial effect are: after adopting this additive and using method, can obtain good polishing effect, comprise polished surface size and reflectivity.The simultaneous reactions time is fast, and then improves production capacity, and improves the efficient of cell piece.In addition, the present invention has nontoxicity, non-corrosiveness, nonirritant, to human body and environment without harm, and additive preparation and use technique simple, equipment is cheap, good reproducibility.
Description of drawings
Fig. 1 is the microphotograph of the silicon chip surface polished surface that obtains of embodiment 1;
Fig. 2 is the reflection spectrum of the silicon chip surface polished surface that obtains of embodiment 1.
Embodiment
Below in conjunction with drawings and Examples, the specific embodiment of the present invention is further described.Following examples only are used for technical scheme of the present invention more clearly is described, and can not limit protection scope of the present invention with this.
The technical scheme of implementation of the present invention is:
Embodiment 1
Take following processing step: the 1) additive of preparation crystalline silicon polishing fluid: take the 100g deionized water as solvent, 2g alkyl glycoside, 1g pyrazine and 0.5g polyoxyethylene glycol are dissolved in the deionized water, make additive; 2) preparation basic solution: the 30g dissolution of sodium hydroxide in deionized water, is obtained the 1000g basic solution; 3) in the 1000g basic solution, add the 20g additive; 4) monocrystalline silicon piece is immersed carry out surface finish in the polishing fluid, polish temperature is 80 ℃, and polishing time is 4min.
Fig. 1 has provided the microphotograph of the silicon chip surface polished surface that obtains, and silicon chip surface has formed even level and smooth box structure as we can see from the figure, and size is about 20-30 μ m.Fig. 2 provides the reflection spectrum of the rear silicon chip surface polished surface of polishing, and as we can see from the figure, the reflectivity of the silicon chip surface polished surface that the present invention obtains is higher, and the integrated reflectivity in the 300-1100nm wavelength region is higher than 35%.
Embodiment 2
Take following processing step: the 1) additive of preparation crystalline silicon polishing fluid: take the 100g deionized water as solvent, 2.5g alkyl glycoside, 1g pyrazine and 0.75g polyoxyethylene glycol are dissolved in the deionized water, make additive; 2) preparation basic solution: the 50g Tetramethylammonium hydroxide is dissolved in the deionized water, obtains the 1000g basic solution; 3) in the 1000g basic solution, add the 25g additive; 4) polysilicon chip is immersed carry out surface finish in the polishing fluid, polish temperature is 82 ℃, and polishing time is 3min30s.
Embodiment 3
Take following processing step: the 1) additive of preparation crystalline silicon polishing fluid: take the 100g deionized water as solvent, 3g alkyl glycoside, 1.5g pyrazine and 0.5g polyoxyethylene glycol are dissolved in the deionized water, make additive; 2) preparation basic solution: 40g potassium hydroxide is dissolved in the deionized water, obtains the 1000g basic solution; 3) in the 1000g basic solution, add the 20g additive; 4) monocrystalline silicon piece is immersed carry out surface finish in the polishing fluid, polish temperature is 75 ℃, and polishing time is 5min.
Embodiment 4
On the basis of embodiment 1, changing alkyl glycoside is 5g, and pyrazine is 3g, and polyoxyethylene glycol is 2g, and sodium hydroxide is 20g, adds the 10g additive in the 1000g basic solution, and polish temperature is 85 ℃, and polishing time is 3min.
Embodiment 5
On the basis of embodiment 1, changing alkyl glycoside is 2g, and pyrazine is 2g, and polyoxyethylene glycol is 1g, and sodium hydroxide is 50g, adds the 50g additive in the 1000g basic solution.
Embodiment 6
On the basis of embodiment 1, changing alkyl glycoside is 3g, and pyrazine is 1.5g, and sodium hydroxide is 40g, adds the 15g additive in the 1000g basic solution.
Embodiment 7
On the basis of embodiment 1, changing sodium hydroxide is 35g.
Embodiment 8
On the basis of embodiment 2, changing Tetramethylammonium hydroxide is 30g.
Embodiment 9
On the basis of embodiment 2, changing Tetramethylammonium hydroxide is 40g.
Embodiment 10
On the basis of embodiment 2, changing Tetramethylammonium hydroxide is 60g.
Embodiment 11
On the basis of embodiment 2, changing Tetramethylammonium hydroxide is 70g.
Embodiment 12
On the basis of embodiment 3, changing potassium hydroxide is 20g.
Embodiment 13
On the basis of embodiment 3, changing potassium hydroxide is 30g.
Embodiment 14
On the basis of embodiment 3, changing potassium hydroxide is 35g.
Embodiment 15
On the basis of embodiment 3, changing potassium hydroxide is 50g.
The above only is preferred implementation of the present invention; should be pointed out that for those skilled in the art, under the prerequisite that does not break away from the technology of the present invention principle; can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (10)
1. be used for the additive of crystalline silicon polishing fluid, it is characterized in that, formed by alkyl glycoside, pyrazine, polyoxyethylene glycol and water.
2. additive according to claim 1 is characterized in that, is comprised of 2～5 weight part alkyl glycoside, 1～3 weight part pyrazine, 0.5～2 weight part polyoxyethylene glycol and 100 weight parts waters.
3. additive according to claim 2 is characterized in that, is comprised of 2～3 weight part alkyl glycoside, 1～2 weight part pyrazine, 0.5～1 weight part polyoxyethylene glycol and 100 weight parts waters.
4. according to claim 1,2 or 3 described additives, it is characterized in that, described water is deionized water.
5. the compound method of crystalline silicon polishing fluid is characterized in that, comprises the steps:
(1) sodium hydroxide, potassium hydroxide or Tetramethylammonium hydroxide are dissolved in the deionized water, obtain basic solution; The weight percentage of described sodium hydroxide, potassium hydroxide is 2～5%; The weight percentage of described Tetramethylammonium hydroxide is 3～7%;
(2) with in the basic solution in the additive adding step (1) of any one among the claim 1-4, obtain polishing fluid, the weight ratio of wherein said additive and basic solution is 1～5:100.
6. the compound method of described crystalline silicon polishing fluid according to claim 5 is characterized in that, the weight percentage of described sodium hydroxide, potassium hydroxide is 3～4%; The weight percentage of described Tetramethylammonium hydroxide is 4～6%; The weight ratio of described additive and basic solution is 1.5～2.5:100.
7. the crystalline silicon finishing method is characterized in that, in the additive adding basic solution with any one among the claim 1-4, then monocrystalline or polysilicon chip are immersed in the polishing fluid that contains additive and polish, during polishing, temperature is 75～85 ℃, and polishing time is 3～5min.
8. crystalline silicon finishing method according to claim 7 is characterized in that, the weight ratio of described additive and basic solution is 1～5:100.
9. crystalline silicon finishing method according to claim 7 is characterized in that, described basic solution makes by sodium hydroxide, potassium hydroxide or Tetramethylammonium hydroxide are dissolved in the deionized water; The weight percentage of described sodium hydroxide, potassium hydroxide is 2～5%; The weight percentage of described Tetramethylammonium hydroxide is 3～7%.
10. crystalline silicon finishing method according to claim 9 is characterized in that, the weight percentage of described sodium hydroxide, potassium hydroxide is 3～4%; The weight percentage of described Tetramethylammonium hydroxide is 4～6%.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107936849A (en) * | 2017-11-10 | 2018-04-20 | 苏州晶瑞化学股份有限公司 | A kind of polishing fluid and its preparation method and application |
| CN113122148A (en) * | 2021-04-07 | 2021-07-16 | 云南合义德新材料有限公司 | Crystalline silicon alkali polishing additive and use method thereof |
| CN113322008A (en) * | 2021-05-10 | 2021-08-31 | 南京卓胜自动化设备有限公司 | Single crystal alkali polishing additive, polishing solution and polishing method |
| CN114373807A (en) * | 2021-11-26 | 2022-04-19 | 江苏科来材料科技有限公司 | Passivation structure of crystalline silicon battery and preparation method thereof |
| CN115785820A (en) * | 2022-11-17 | 2023-03-14 | 万华化学集团电子材料有限公司 | Silicon polishing composition and application thereof |
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| JP2000296459A (en) * | 1999-04-13 | 2000-10-24 | Speedfam-Ipec Co Ltd | Workpiece polishing method |
| US20020055324A1 (en) * | 2000-09-21 | 2002-05-09 | Wacker Siltronic Gesellschaft Fur Halbleitermaterialien Ag | Process for polishing silicon wafers |
| CN101352829A (en) * | 2007-07-24 | 2009-01-28 | 上海光炜电子材料有限公司 | Method for processing silicon polished section with low-roughness concentration |
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2013
- 2013-06-18 CN CN201310239830.5A patent/CN103320018B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000296459A (en) * | 1999-04-13 | 2000-10-24 | Speedfam-Ipec Co Ltd | Workpiece polishing method |
| US20020055324A1 (en) * | 2000-09-21 | 2002-05-09 | Wacker Siltronic Gesellschaft Fur Halbleitermaterialien Ag | Process for polishing silicon wafers |
| CN101352829A (en) * | 2007-07-24 | 2009-01-28 | 上海光炜电子材料有限公司 | Method for processing silicon polished section with low-roughness concentration |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107936849A (en) * | 2017-11-10 | 2018-04-20 | 苏州晶瑞化学股份有限公司 | A kind of polishing fluid and its preparation method and application |
| CN107936849B (en) * | 2017-11-10 | 2020-09-15 | 苏州晶瑞化学股份有限公司 | Polishing solution and preparation method and application thereof |
| CN113122148A (en) * | 2021-04-07 | 2021-07-16 | 云南合义德新材料有限公司 | Crystalline silicon alkali polishing additive and use method thereof |
| CN113322008A (en) * | 2021-05-10 | 2021-08-31 | 南京卓胜自动化设备有限公司 | Single crystal alkali polishing additive, polishing solution and polishing method |
| CN114373807A (en) * | 2021-11-26 | 2022-04-19 | 江苏科来材料科技有限公司 | Passivation structure of crystalline silicon battery and preparation method thereof |
| CN115785820A (en) * | 2022-11-17 | 2023-03-14 | 万华化学集团电子材料有限公司 | Silicon polishing composition and application thereof |
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Address after: Liyang City, Jiangsu province 213300 Li Cheng Zhen Wu Changzhou city Tandu Road No. 8 Patentee after: Changzhou Shichuang Energy Co., Ltd Address before: 213300 Jiangsu city of Changzhou province Liyang Liyang Town of Wuhu Shanghai Road No. 168 building C Patentee before: CHANGZHOU SHICHUANG ENERGY TECHNOLOGY Co.,Ltd. |
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