CN103307965A - Detection set and detection method for PECVD film forming hollows in Si-based thin-film cells - Google Patents
Detection set and detection method for PECVD film forming hollows in Si-based thin-film cells Download PDFInfo
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- CN103307965A CN103307965A CN2013102235242A CN201310223524A CN103307965A CN 103307965 A CN103307965 A CN 103307965A CN 2013102235242 A CN2013102235242 A CN 2013102235242A CN 201310223524 A CN201310223524 A CN 201310223524A CN 103307965 A CN103307965 A CN 103307965A
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- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 title claims abstract description 51
- 238000001514 detection method Methods 0.000 title claims abstract description 28
- 239000010408 film Substances 0.000 title abstract description 64
- 239000010409 thin film Substances 0.000 title abstract description 11
- 239000000523 sample Substances 0.000 claims abstract description 110
- 238000000151 deposition Methods 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 6
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 6
- 238000005457 optimization Methods 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 239000010438 granite Substances 0.000 description 1
- 239000005431 greenhouse gas Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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Abstract
The invention relates to a detection set and a detection method for PECVD film forming hollows in Si-based thin-film cells. Presently, detecting the area of thin film hollows by an SEM (scanning electron microscope) is difficult, and the SEM equipment suited to the size of the thin-film cells is highly expensive. Therefore, the detection set for PECVD film forming hollows in Si-based thin-film cells is disclosed. The detection set comprises a detection device, a circuit system and a display device used for displaying the area and number of PECVD film forming hollows in thin-film cells. The detection device comprises a probe set, a movement system, and a positioning system, wherein the movement system allows for X-axial reciprocating motion of the probe set and the positioning system allows for Y-axial reciprocating motion of the thin-film cells. The probe set and the circuit system form a closed loop. The display device is electrically connected with the output end of the circuit system. In addition, the invention further discloses a detection method for PECVD film forming hollows in Si-based thin-film cells. The detection set is reasonable in structure, low in cost and convenient to use and is applicable to detecting the number and area of thin film hollows.
Description
Technical field
The present invention relates to Si base film battery production field, particularly pick-up unit and the detection method of PECVD film forming hollow out in a kind of Si base film battery.
Background technology
In order to reduce the discharging of environmental pollution, CO2 greenhouse gases, solar energy industry has become each national strategic requirement.At present, the product in photovoltaic market is divided into crystal silicon solar batteries and thin-film solar cells, compares with crystal silicon solar batteries, cheap, the advantages such as pollution is low, dirigibility is high, low light level effect is good, suitable large areas use that thin-film solar cells has.The Si/SiGe/Si three lamination structures of PECVD deposition are the electric layers of hull cell, are responsible for producing photo-generated carrier, have directly determined open-circuit voltage, short-circuit current and the conversion efficiency of Si base film battery.
Under existing manufacturing condition, there are many hollow outs in the film of PECVD deposition in 15cm place, distance glass minor face two ends scope, the hollow out specification mainly concentrates on the scope of 1mm, not only affect open-circuit voltage, the short-circuit current of electric layer, the back electrode that PECVD is deposited links to each other with front electrode and forms short circuit, further reduces the conversion efficiency of hull cell.So the fretwork area size of PECVD deposition Si base film has directly affected the conversion efficiency of hull cell.
At present, the film hollow out can adopt the SEM(scanning electron microscope) measure, SEM can accurately observe size and the position of hollow out, but the quantity of hull cell two ends hollow out is a lot, and SEM test fretwork area is also very difficult.And the SEM test needs to carry out under vacuum condition, and because very expensive for the SEM equipment of hull cell size.
Summary of the invention
The technical problem to be solved in the present invention is the defects that how to overcome prior art, and pick-up unit and the detection method of PECVD film forming hollow out in a kind of Si base film battery is provided.
For solving the problems of the technologies described above, the pick-up unit of PECVD film forming hollow out in this Si base film battery comprises pick-up unit, Circuits System and is used for showing the display device of hull cell PECVD film forming fretwork area and quantity; Pick-up unit comprises probe groups and is used for the realization probe groups to be done the kinematic system of back and forth movement and is used for the realization hull cell is done back and forth movement in Y direction positioning system in X-direction; Probe groups and Circuits System form the closed-loop path; Display device is electrically connected with the output terminal of Circuits System.
So design is easy to use, can whether form the loop by the Circuits System that is connected with probe groups, detects film hollow out quantity by the display device that is electrically connected with the output terminal of Circuits System, and then calculates total quantity and the total area of film hollow out.
As optimization, positioning system comprises for the air supporting handgrip that hull cell is firmly grasped, air supporting handgrip one end connection hull cell, and the other end connects the travel mechanism that hull cell can be done back and forth movement in Y direction.So design is convenient to realize that hull cell does back and forth movement in Y direction.
As optimization, kinematic system comprises servomotor and two arbor wheels that are arranged on the hull cell outside, and one of them arbor wheel is driving wheel, connects servomotor, and another arbor wheel is engaged wheel; Two arbor wheels link to each other by the axle band that is arranged on the hull cell top and vertically place; Also comprise for the control circuit of realizing that the servomotor rotating is rotated.So design is convenient to realize that probe groups does back and forth movement in X-direction.
As optimization, Circuits System forms the closed-loop path by power supply, wire, diode, probe groups and logic gates.So design can whether conducting realizes whether Circuits System forms the loop by diode, and then shows whether be the hollow out zone by display device.
As optimization, probe groups is fixed on the bracing frame I, and the bracing frame I is positioned on the axle band by wedge-formed incision, and the axle band has the bracing frame II, and the bracing frame II is fixed on and prevents on the pedestal that operational process middle probe group shakes; The bracing frame I is rotated on the bracing frame II along the X-direction back and forth movement by servomotor band moving axis band.So design is easy to use, but and operational process middle probe group shake.
As optimization, each probe groups includes three probes, is respectively probe 1, probe 2, probe 3, and three probe arrangement design of every group are isosceles right triangle, and probe 1 is right angle electrical, and probe 1 forms the logical AND gate circuit with probe 2, probe 3 respectively.So design, display device can be collected the output signal of logical AND gate circuit, and then by calculated signals film fretwork area and quantity.
As optimization, each probe diameter is 5 microns in the probe groups, and the spacing of adjacent probe is 100 microns.So design detects effect better.
As optimization, probe groups is 9 groups of probes, and the array that forms 3*3 is evenly distributed in the hollow out regional extent of hull cell.So design is easy to use, and detection efficiency is high.
The detection method of the pick-up unit of PECVD film forming hollow out is characterized in that in a kind of Si base film battery of right to use requirement 1, comprises the steps:
1): the hull cell of PECVD deposition is fixed on the board, and initialization pick-up unit and display device;
2): probe groups begins scanning along the X+ direction of principal axis under the driving of kinematic system, when Circuits System forms the loop, is shown as film hollow out zone by display device, and record, when Circuits System can't form the loop, be shown as non-hollow out zone by display device, and record;
3): after probe groups was finished along the scanning of X+ direction of principal axis, by positioning system control, hull cell moved the 105-115 micron along the Y+ direction of principal axis, and probe groups scans along the X-direction of principal axis;
4): repeat above-mentioned steps 1)-3) until finish detection to the whole hollow out of PECVD film forming zone in the hull cell;
5): after the detection in the whole hollow out of PECVD film forming zone in the hull cell is finished, gather and calculate hollow out total quantity and the total area of PECVD deposit film by display device.
As optimization, each probe groups comprises probe 1, probe 2 and probe 3, when the zone that runs into the film hollow out, probe 1 directly contacts the TCO rete with probe 2 or probe 3, and Circuits System forms loop, diode current flow, the computer export " 1 " that is connected with the logical AND gate circuit, in non-hollow out zone, probe 1 can't form the loop, the computer export " 0 " that is connected with the logical AND gate circuit with probe 2 or probe 3; By the interval number of times of signal " 0 " with " 1 ", can calculate the quantity of film hollow out; When " 1 " appears continuously in Y direction, the number of times that calculates " 1 " appearance adds the area that the area that multiply by probe groups after 1 is Y direction film hollow out again, in like manner can calculate the area of X-direction film hollow out, finally draw hollow out total quantity and the total area of PECVD deposit film.So design is convenient to draw more accurately hollow out total quantity and the total area of PECVD deposit film.
Pick-up unit and the detection method of PECVD film forming hollow out in the Si base film battery of the present invention, rational in infrastructure, cost is lower, easy to use, quantity and the area of film hollow out be can test out, the quantity of hollow out in the PECVD film forming procedure and the judgement of area greatly are conducive to.Have preferably actual application value and promotional value.
Description of drawings
Be described further below in conjunction with pick-up unit and the detection method of accompanying drawing to PECVD film forming hollow out in this Si base film battery:
Fig. 1 is the structural representation of the pick-up unit of PECVD film forming hollow out in this Si base film battery;
Fig. 2 is the structural representation of the Circuits System of the pick-up unit of PECVD film forming hollow out in this Si base film battery;
Fig. 3 is the structural representation of the logic gates of the probe groups of the pick-up unit of PECVD film forming hollow out in this Si base film battery;
Fig. 4 is the flow process frame diagram of the detection method of PECVD film forming hollow out in this Si base film battery.
Among the figure: 1 is that hull cell, 2 is that bracing frame I, 3 is that bracing frame II, 4 is that axle band, 5 is that air supporting handgrip, 6 is that pedestal, 7 is that servomotor, 8 is probe groups.
Embodiment
For making purpose of the present invention, technical scheme and advantage clearer, referring to the accompanying drawing embodiment that develops simultaneously, the present invention is described in more detail.
As shown in Figure 1 to Figure 3, the invention discloses the pick-up unit of PECVD film forming hollow out in a kind of Si base film battery, comprise pick-up unit, Circuits System and be used for showing the display device of hull cell 1 PECVD film forming fretwork area and quantity; Pick-up unit comprises probe groups 8 and is used for realization probe groups 8 to be done the kinematic system of back and forth movement and is used for realization hull cell 1 is done back and forth movement in Y direction positioning system in X-direction; Probe groups 8 and Circuits System form the closed-loop path; Display device is electrically connected with the output terminal of Circuits System.
Positioning system comprises for the air supporting handgrip 5 that hull cell 1 is firmly grasped, air supporting handgrip 5 one ends connection hull cell 1, and the other end connects the travel mechanism that hull cell 1 can be done back and forth movement in Y direction; Kinematic system comprises servomotor 7 and two arbor wheels that are arranged on hull cell 1 outside, and one of them arbor wheel is driving wheel, connects servomotor 7, and another arbor wheel is engaged wheel; Two arbor wheels link to each other by the axle band 4 that is arranged on hull cell 1 top and vertically places; Also comprise for the control circuit of realizing that servomotor 7 rotatings are rotated; Circuits System forms the closed-loop path by power supply, wire, diode, probe groups 8 and logic gates.
Probe groups 8 is fixed on the bracing frame I 2, and bracing frame I 2 is positioned on the axle band 4 by wedge-formed incision, and axle band 4 has bracing frame II 3, and bracing frame II 3 is fixed on and prevents on the pedestal 6 that operational process middle probe group 8 shakes; Bracing frame I 2 is rotated on bracing frame II 3 along the X-direction back and forth movement by servomotor 7 band moving axis bands 4.
Each probe groups 8 includes three probes, be respectively probe 1, probe 2, probe 3, three probe arrangement design of every group are isosceles right triangle, probe 1 is right angle electrical, probe 1 forms the logical AND gate circuit with probe 2, probe 3 respectively, the display device computing machine is collected the output signal of logical AND gate circuit, by calculated signals film fretwork area and quantity; Each probe diameter is 5 microns in the probe groups 8, and the spacing of adjacent probe is 100 microns; The characteristics that are divided into 39 sub-batteries and hollow out position according to hull cell 1 are divided into 9 groups of probes with probe groups 8, and the array that forms 3*3 is evenly distributed in the hollow out regional extent of hull cell 1.
Wherein, the glass substrate specification of Si base film used in battery is 1244mm*635mm*2mm.
Control circuit comprises power supply, contactor, coil, electrothermal relay and knife-like switch.
Travel mechanism is for can realize that hull cell 1 is at the pulley drive system of Y direction back and forth movement.
As shown in Figure 4, the invention also discloses the detection method of PECVD film forming hollow out in a kind of Si base film battery, comprise the steps:
1): the hull cell 1 of PECVD deposition is fixed on the board, and initialization pick-up unit and display device;
2): probe groups 8 begins scanning along the X+ direction of principal axis under the driving of kinematic system, movement velocity is 100 little meter per seconds, when the zone that runs into the film hollow out, probe 1 directly contacts the TCO rete with probe 2 or probe 3, circuit forms the loop, diode current flow, the display device computer export " 1 " that is connected with the logical AND gate circuit.In non-hollow out zone, probe 1 can't form the loop, the display device computer export " 0 " that is connected with the logical AND gate circuit with probe 2 or probe 3;
3): after probe groups 8 was finished along the scanning of X+ direction of principal axis, by positioning system control, hull cell 1 moved 110 microns along the Y+ direction of principal axis, and probe groups 8 scans along the X-direction of principal axis;
4): repeat above-mentioned steps 1)-3) until finish detection to the whole hollow out of PECVD film forming zone in the hull cell 1;
5): after the detection in the whole hollow out of PECVD film forming zone in the hull cell 1 is finished, by the interval number of times of signal " 0 " with " 1 ", can calculate the quantity of film hollow out; When " 1 " appears continuously in Y direction, the number of times that calculates " 1 " appearance adds the area that multiply by probe groups 8 after 1 again, and (probe groups 8 can be approximately long 110 microns, wide 5 microns rectangle) is the area of Y direction film hollow out, in like manner can calculate the area of X-direction film hollow out, finally draw hollow out total quantity and the total area of PECVD deposit film.
Above-mentioned embodiment only is concrete case of the present invention; scope of patent protection of the present invention includes but not limited to the above-mentioned embodiment description of this invention; the pick-up unit of PECVD film forming hollow out and detection method and any person of an ordinary skill in the technical field all should fall into scope of patent protection of the present invention to its suitable variation or modification of doing in any Si base film battery that meets claims of the present invention.
Claims (10)
1. the pick-up unit of PECVD film forming hollow out in the Si base film battery is characterized in that: comprise pick-up unit, Circuits System and be used for showing the display device of hull cell (1) PECVD film forming fretwork area and quantity; Described pick-up unit comprises probe groups (8) and is used for realizing that described probe groups (8) does the kinematic system of back and forth movement and be used for realizing that hull cell (1) does the positioning system of back and forth movement in Y direction in X-direction; Described probe groups (8) and Circuits System form the closed-loop path; Described display device is electrically connected with the output terminal of Circuits System.
2. the pick-up unit of PECVD film forming hollow out in the Si base film battery according to claim 1, it is characterized in that: described positioning system comprises for the air supporting handgrip (5) that hull cell (1) is firmly grasped, described air supporting handgrip (5) one ends connect hull cell (1), and the other end connects the travel mechanism that hull cell (1) can be done back and forth movement in Y direction.
3. the pick-up unit of PECVD film forming hollow out in the Si base film battery according to claim 1, it is characterized in that: described kinematic system comprises servomotor (7) and two arbor wheels that are arranged on hull cell (1) outside, one of them arbor wheel is driving wheel, connects servomotor (7), and another arbor wheel is engaged wheel; Described two arbor wheels link to each other by the axle band (4) that is arranged on hull cell (1) top and vertically place; Also comprise for the control circuit of realizing that servomotor (7) rotating is rotated.
4. the pick-up unit of PECVD film forming hollow out in the Si base film battery according to claim 1, it is characterized in that: described Circuits System forms the closed-loop path by power supply, wire, diode, probe groups (8) and logic gates.
5. the pick-up unit of PECVD film forming hollow out in the Si base film battery according to claim 3, it is characterized in that: described probe groups (8) is fixed on the bracing frame I (2), support frame as described above I (2) is positioned on the axle band (4) by wedge-formed incision, described axle band (4) has bracing frame II (3), and support frame as described above II (3) is fixed on and prevents on the pedestal (6) that operational process middle probe group (8) shakes; Bracing frame I (2) is rotated in bracing frame II (3) upper along the X-direction back and forth movement by servomotor (7) band moving axis band (4).
6. the pick-up unit of PECVD film forming hollow out to 5 arbitrary described Si base film batteries according to claim 1, it is characterized in that: each probe groups (8) includes three probes, be respectively probe 1, probe 2, probe 3, three probe arrangement design of every group are isosceles right triangle, probe 1 is right angle electrical, and probe 1 forms the logical AND gate circuit with probe 2, probe 3 respectively.
7. the pick-up unit of PECVD film forming hollow out in the Si base film battery according to claim 6, it is characterized in that: each probe diameter is 5 microns in the probe groups (8), and the spacing of adjacent probe is 100 microns.
8. the pick-up unit of PECVD film forming hollow out in the Si base film battery according to claim 7, it is characterized in that: described probe groups (8) is 9 groups of probes, the array that forms 3*3 is evenly distributed in the hollow out regional extent of hull cell (1).
9. a right to use requires the detection method of the pick-up unit of PECVD film forming hollow out in the 1 described Si base film battery, it is characterized in that, comprises the steps:
1): the hull cell (1) of PECVD deposition is fixed on the board, and initialization pick-up unit and display device;
2): probe groups (8) begins scanning along the X+ direction of principal axis under the driving of kinematic system, when Circuits System forms the loop, is shown as film hollow out zone by display device, and record, when Circuits System can't form the loop, be shown as non-hollow out zone by display device, and record;
3): after probe groups (8) was finished along the scanning of X+ direction of principal axis, by positioning system control, hull cell (1) moved the 105-115 micron along the Y+ direction of principal axis, and probe groups (8) scans along the X-direction of principal axis;
4): repeat above-mentioned steps 1)-3) until finish detection to the whole hollow out of PECVD film forming zone in the hull cell (1);
5): after the detection in the whole hollow out of PECVD film forming zone in the hull cell (1) is finished, gather and calculate hollow out total quantity and the total area of PECVD deposit film by display device.
10. detection method according to claim 9, it is characterized in that: each probe groups (8) comprises probe 1, probe 2 and probe 3, when the zone that runs into the film hollow out, probe 1 directly contacts the TCO rete with probe 2 or probe 3, and Circuits System forms loop, diode current flow, the computer export " 1 " that is connected with the logical AND gate circuit, in non-hollow out zone, probe 1 can't form the loop, the computer export " 0 " that is connected with the logical AND gate circuit with probe 2 or probe 3; By the interval number of times of signal " 0 " with " 1 ", can calculate the quantity of film hollow out; When " 1 " appears continuously in Y direction, the number of times that calculates " 1 " appearance adds the area that the area that multiply by probe groups (8) after 1 is Y direction film hollow out again, in like manner can calculate the area of X-direction film hollow out, finally draw hollow out total quantity and the total area of PECVD deposit film.
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| CN203259105U (en) * | 2013-06-06 | 2013-10-30 | 山东禹城汉能光伏有限公司 | Detection device of PECVD (plasma enhanced chemical vapor deposition) film formation hollowed-out part in si-based thin film battery |
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2013
- 2013-06-06 CN CN201310223524.2A patent/CN103307965B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8319513B2 (en) * | 2008-09-11 | 2012-11-27 | Samsung Electronics Co., Ltd. | Inspecting apparatus for solar cell and inspecting method using the same |
| CN202599892U (en) * | 2012-05-03 | 2012-12-12 | 深圳市创益科技发展有限公司 | Automatic detection device for laser scribed lines of thin film solar cell |
| CN102842520A (en) * | 2012-08-31 | 2012-12-26 | 深圳市创益科技发展有限公司 | Online detection device and method for thin film solar cell photovoltaic conversion layer |
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| CN203259105U (en) * | 2013-06-06 | 2013-10-30 | 山东禹城汉能光伏有限公司 | Detection device of PECVD (plasma enhanced chemical vapor deposition) film formation hollowed-out part in si-based thin film battery |
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Inventor after: Shao Chuanbing Inventor after: Liu Xiaoyu Inventor after: Hua Lei Inventor after: Wang Rui Inventor before: Shao Chuanbing Inventor before: Liu Xiaoyu |
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Effective date of registration: 20141027 Address after: High tech Zone 251200 Shandong city of Dezhou province Yucheng City revitalization Road hina photovoltaic industrial park Applicant after: Shandong Yucheng Hanergy Photovoltaic Co., Ltd. Applicant after: Hanenergy Solar Photovoltaic Technology Co.,Ltd Address before: High tech Zone 251200 Shandong city of Dezhou province Yucheng City revitalization Road hina photovoltaic industrial park Applicant before: Shandong Yucheng Hanergy Photovoltaic Co., Ltd. |
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Address after: High tech Zone 251200 Shandong city of Dezhou province Yucheng City revitalization Road hina photovoltaic industrial park Applicant after: Yucheng, Shandong Han Neng thin film solar Co., Ltd Applicant after: Hanenergy Solar Photovoltaic Technology Co.,Ltd Address before: High tech Zone 251200 Shandong city of Dezhou province Yucheng City revitalization Road hina photovoltaic industrial park Applicant before: Shandong Yucheng Hanergy Photovoltaic Co., Ltd. Applicant before: Hanenergy Solar Photovoltaic Technology Co.,Ltd |
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Free format text: CORRECT: APPLICANT; FROM: SHANDONG YUCHENG HANERGY PHOTOVOLTAIC CO., LTD. TO: SHANDONG YUCHENG HANERGY THIN FILM SOLAR CO., LTD. |
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Effective date of registration: 20190203 Address after: Room 103, Building 2, Office District, Olympic Village, Chaoyang District, Beijing Patentee after: HANNENG PHOTOVOLTAIC TECHNOLOGY CO., LTD. Address before: 251200 Haneng Photovoltaic Industrial Park, Revitalization Avenue, Yucheng High-tech Zone, Dezhou City, Shandong Province Co-patentee before: Hanenergy Solar Photovoltaic Technology Co.,Ltd Patentee before: Yucheng, Shandong Han Neng thin film solar Co., Ltd |
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Effective date of registration: 20190308 Address after: Room 107, Building 2, Olympic Village Street Comprehensive Office District, Chaoyang District, Beijing Patentee after: Han energy mobile Energy Holding Group Co., Ltd. Address before: Room 103, Building 2, Office District, Olympic Village, Chaoyang District, Beijing Patentee before: HANNENG PHOTOVOLTAIC TECHNOLOGY CO., LTD. |
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