CN103296189A - 一种高导热率高取光高耐压集成式led - Google Patents

一种高导热率高取光高耐压集成式led Download PDF

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CN103296189A
CN103296189A CN2013102452812A CN201310245281A CN103296189A CN 103296189 A CN103296189 A CN 103296189A CN 2013102452812 A CN2013102452812 A CN 2013102452812A CN 201310245281 A CN201310245281 A CN 201310245281A CN 103296189 A CN103296189 A CN 103296189A
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copper
light
copper cup
integrated led
emittance
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傅立铭
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Suzhou Jinke Xinhui Photoelectric Technology Co Ltd
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Suzhou Jinke Xinhui Photoelectric Technology Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating

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  • Arrangement Of Elements, Cooling, Sealing, Or The Like Of Lighting Devices (AREA)

Abstract

一种高导热率高取光高耐压集成式led，包括基材，所述基材由线路层、绝缘导热层、铜面组成；LED芯片；荧光胶；模压硅胶，其特征在于：还包括铜杯，以及在线路层面向内凹陷可容纳铜杯的若干凹槽；所述铜杯以铆合方式设置于凹槽内，所述LED芯片固晶于铜杯内，所述LED芯片通过金线与线路层连接，所述荧光胶填充于铜杯内，所述模压硅胶以外表面呈球形曲面的形状覆盖于铜杯上。本发明散热效果好，产生的热量经由铜杯做面积扩散至绝缘导热层，然后传导至下方的铜面再经由铜面传道至散热器。抗电压击穿能力强，取光率高。

Description

一种高导热率高取光高耐压集成式LED
技术领域
本发明涉及高导热率高取光高耐压集成式led，属于led照明与背光领域。
背景技术
   目前LED采用集成式多芯片为一个国内发展的趋势, 现有的技术方案为芯片直接贴于电路板或铝基板上,打线后连成回路,在于边缘以划胶或黏合框架将芯片周围成为一较低的凹槽,再将与萤光粉混合的胶材倒入凹槽内做成集成式LED。上述技术方案，出于散热目的，多采用金属基板，在绝缘层上挖出灯杯开孔以容LED，但也因此导致金属基板高压耐受能力不足；采用的硅胶胶量大，如采用软的硅胶吸湿率很高,于高湿环境下硅胶吸湿后会膨胀造成质量问题；同时，因于芯片上方灌注硅胶形成一平面,导致产生内反射,平面对比于好的曲面光取出可差异5-10%的亮度。
发明内容
针对现有技术的不足，本发明的目的是提供一种高导热率高取光高耐压集成式led。
为实现上述目的，本发明是通过以下技术手段来实现的：一种高导热率高取光高耐压集成式led，包括基材，所述基材由线路层、绝缘导热层、铜面组成；LED芯片；荧光胶；模压硅胶，其特征在于：还包括铜杯，以及在线路层面向内凹陷可容纳铜杯的若干凹槽；所述铜杯以铆合方式设置于凹槽内，所述LED芯片固晶于铜杯内，所述LED芯片通过金线与线路层连接，所述荧光胶填充于铜杯内，所述模压硅胶以外表面呈球形曲面的形状覆盖于铜杯上。
进一步，所述荧光胶的上表面为弧形曲面；
在所述线路层与铜杯表面电镀有一层银面；
所述铜杯材质为无氧铜（红铜）；
所述基材为覆铜板材（cam3-09）或高导热玻纤板。
本发明的有益效果是：散热效果好，产生的热量经由铜杯做面积扩散至绝缘导热层，然后传导至下方的铜面再经由铜面传道至散热器。抗电压击穿能力强，取光率高。
附图说明
图1为本发明的结构示意图。
附图标号的含义如下：
1铜面，2绝缘导热层,3led芯片，4凹槽， 5铜杯， 6荧光胶， 7金线, 8模压硅胶,9线路层。
具体实施方式
下面将结合说明书附图，对本发明作进一步的说明。
如图1所示，一种高导热率高取光高耐压集成式led，包括基材，所述基材由线路层9、绝缘导热层2、铜面组成1；LED芯片3；荧光胶6；模压硅胶5，设置有铜杯5，其作用是以面积扩散的方式将热量传导至绝缘导热层2，再经由铜面1扩散至散热器。在线路层面向内凹陷可容纳铜杯的若干凹槽4，凹槽4不穿孔基材，以增加基材的抗电压能力；所述铜杯5以铆合方式设置于凹槽4内，所述LED芯片3固晶于铜杯5内，所述LED芯片3通过金线7与线路层9连接形成回路；所述荧光胶6填充于铜杯5内，使其蓝光与萤光粉的黄光混合成白光；所述模压硅胶8以外表面呈球形曲面的形状覆盖于铜杯5上，球形曲面的取光比平面提高5-10%。
进一步，所述荧光胶6的上表面为弧形曲面，用以增加取光；
在所述线路层9与铜杯5表面电镀有一层银面，以利反光与打线。
所述铜杯5材质为无氧铜（红铜）；
所述基材为覆铜板材（cam3-09）或高导热玻纤板，其导热率可达1-1.5，耐压4.5KV不击穿。
以上显示和描述了本发明的基本原理、主要特征及优点。本行业的技术人员应该了解，本发明不受上述实施例的限制，上述实施例和说明书中描述的只是说明本发明的原理，在不脱离本发明精神和范围的前提下，本发明还会有各种变化和改进，这些变化和改进都落入要求保护的本发明范围内。本发明要求保护范围由所附的权利要求书及其等效物界定。

Claims (5)

1.一种高导热率高取光高耐压集成式LED，包括基材，所述基材由线路层、绝缘导热层、铜面组成；LED芯片；荧光胶；模压硅胶，其特征在于：还包括铜杯，以及在线路层面向内凹陷可容纳铜杯的若干凹槽；所述铜杯以铆合方式设置于凹槽内，所述LED芯片固晶于铜杯内，所述LED芯片通过金线与线路层连接，所述荧光胶填充于铜杯内，所述模压硅胶以外表面呈球形曲面的形状覆盖于铜杯上。
2.如权利要求1所述的一种高导热率高取光高耐压集成式LED，其特征在于：所述荧光胶的上表面为弧形曲面。
3.如权利要求1所述的一种高导热率高取光高耐压集成式LED，其特征在于：在所述线路层与铜杯表面电镀有一层银面。
4.如权利要求1所述的一种高导热率高取光高耐压集成式LED，其特征在于：所述铜杯材质为无氧铜（红铜）。
5.如权利要求1所述的一种高导热率高取光高耐压集成式LED，其特征在于：所述基材为覆铜板材（cam3-09）或高导热玻纤板。
CN2013102452812A 2013-06-20 2013-06-20 一种高导热率高取光高耐压集成式led Pending CN103296189A (zh)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010125647A (ja) * 2008-11-26 2010-06-10 Towa Corp 光学成形品の圧縮成形方法及び金型
TW201103170A (en) * 2009-07-08 2011-01-16 Paragon Sc Lighting Tech Co LED package structure with concave area for positioning heat-conducting substance and method for manufacturing the same
CN102447044A (zh) * 2010-12-10 2012-05-09 奉化市匡磊半导体照明有限公司 绝缘底板发光芯片封装结构
CN103050606A (zh) * 2013-01-11 2013-04-17 华南师范大学 一种高显色指数大功率led封装结构及其制造方法
CN203377251U (zh) * 2013-06-20 2014-01-01 苏州金科信汇光电科技有限公司 一种高导热率高取光高耐压集成式led

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010125647A (ja) * 2008-11-26 2010-06-10 Towa Corp 光学成形品の圧縮成形方法及び金型
TW201103170A (en) * 2009-07-08 2011-01-16 Paragon Sc Lighting Tech Co LED package structure with concave area for positioning heat-conducting substance and method for manufacturing the same
CN102447044A (zh) * 2010-12-10 2012-05-09 奉化市匡磊半导体照明有限公司 绝缘底板发光芯片封装结构
CN103050606A (zh) * 2013-01-11 2013-04-17 华南师范大学 一种高显色指数大功率led封装结构及其制造方法
CN203377251U (zh) * 2013-06-20 2014-01-01 苏州金科信汇光电科技有限公司 一种高导热率高取光高耐压集成式led

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Application publication date: 20130911