CN103296161A - GaN-based LED superlattice buffer layer structure and preparation method thereof - Google Patents
GaN-based LED superlattice buffer layer structure and preparation method thereof Download PDFInfo
- Publication number
- CN103296161A CN103296161A CN2012100519226A CN201210051922A CN103296161A CN 103296161 A CN103296161 A CN 103296161A CN 2012100519226 A CN2012100519226 A CN 2012100519226A CN 201210051922 A CN201210051922 A CN 201210051922A CN 103296161 A CN103296161 A CN 103296161A
- Authority
- CN
- China
- Prior art keywords
- gan
- layer
- buffer layer
- layer structure
- preparation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 16
- 239000010980 sapphire Substances 0.000 claims abstract description 16
- 238000010276 construction Methods 0.000 claims description 6
- 238000003475 lamination Methods 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 7
- 239000012467 final product Substances 0.000 abstract description 3
- 239000011248 coating agent Substances 0.000 description 9
- 238000000576 coating method Methods 0.000 description 9
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
Images
Abstract
The invention provides a GaN-based LED superlattice buffer layer structure and a preparation method of the GaN-based LED superlattice buffer layer structure. GaN layers and Al1-xGaxN layers are cyclically and alternately prepared on a sapphire substrate to form a buffer layer provided with a superlattice structure. Changes of Ga components in the Al1-xGaxN layers are controlled by controlling the ratio of the number of the inlet Al atoms to the number of the inlet Ga atoms, or the thickness ratio of the Al1-xGaxN layers is controlled by controlling the time ratio of the epitaxial GaN layers to the Al1-xGaxN layers so as to gradually reduce the difference value of an epitaxial edge wavelength and a central wavelength, the epitaxial edge wavelength and the central wavelength are basically consistent, and therefore evenness of the epitaxial wavelength is improved. According to the GaN-based LED superlattice buffer layer structure and the preparation method of the GaN-based LED superlattice buffer layer structure, time and cost of follow-up chips and a sorting process can be greatly reduced, and a final product output rate is improved.
Description
Technical field
The present invention relates to a kind of LED epitaxial loayer and preparation method thereof, particularly relate to a kind of GaN base LED super-lattice buffer layer structure and preparation method thereof.
Background technology
MOCVD is a kind of novel vapor phase epitaxial growth technology that grows up on the basis of vapor phase epitaxial growth (VPE).MOCVD is as the crystal growth raw material with hydride of the organic compound of III family, II family element and V, VI family element etc., in the pyrolysis mode at the enterprising promoting the circulation of qi phase epitaxy of substrate, the thin layer monocrystal material of grow various III-V family, II-VI compound semiconductor and their multivariate solid solution.Usually the crystal growth in the MOCVD system all is at normal pressure or the down logical H of low pressure (10-100Torr)
2Cold wall quartz (stainless steel) reative cell in carry out, underlayer temperature is 500-1200 ℃, heats graphite plate (substrate base is above graphite plate) with filament, H2 carries metallorganic to the vitellarium by the fluid supply bubbling of Controllable Temperature.
Utilize MOCVD equipment growing GaN extension, generally Sapphire Substrate need be inserted reative cell and react.Because there is mismatch in the lattice between sapphire and the GaN, can produce dislocation when growth influences crystalline quality.In order to reduce the influence of these dislocations as far as possible, when growth high-purity GaN monocrystalline, generally need earlier at sapphire growth one deck GaN resilient coating, regrowth GaN monocrystalline.The composition of resilient coating and growth conditions have crucial effects to the crystalline quality of GaN crystal.
Present MOCVD board growing large-size epitaxial wafer, when especially using graph substrate, because the stress that the lattice mismatch between substrate and the extension and thermal deformation difference produce can make epitaxial wafer generation warping phenomenon, warpage makes the surface of when grown quantum trap epitaxial wafer center more close or adjacent graphite plate Pocket than the edge, thereby make central portion temp be higher than the marginal portion, finally cause the emission wavelength of epitaxial wafer core shorter than the marginal portion.Because large scale epitaxial wafer area is bigger, wavelength difference with aggravation extension core and marginal portion, this will make and sorting work causes the significantly increase of time and cost follow-up chip, also will cause the wavelength yields of epitaxial wafer to descend significantly simultaneously.
The resilient coating of extension is the articulamentum that is between Sapphire Substrate and the GaN extension, and its component and growth conditions will exert an influence to the lattice mismatch between substrate and the extension, thereby the stress distribution of change epitaxial wafer changes the warpage degree in the growth course.
Summary of the invention
The shortcoming of prior art in view of the above, the object of the present invention is to provide a kind of GaN base LED super-lattice buffer layer structure and preparation method thereof, by in the GaN resilient coating, utilizing superlattice structure to mix the Al atom, and the component ratio of optimization Al/Ga, realization improves epitaxial wafer wavelength uniformity, to solve in the prior art because the stress that the lattice mismatch between substrate and the extension and thermal deformation difference produce can make the problem of epitaxial wafer generation warping phenomenon.
Reach other relevant purposes for achieving the above object, the invention provides a kind of GaN base LED super-lattice buffer layer structure, described super-lattice buffer layer structure is by a plurality of GaN layers and a plurality of Al
1-xGa
xThe N layer is alternately laminated stepped construction mutually, wherein, and 0.01≤x≤1, and this Al respectively
1-xGa
xGa component x increases progressively with the increase of stacked number in the N layer.
In GaN base LED super-lattice buffer layer structure of the present invention, described alternately laminated number is 2～30.
In GaN base LED super-lattice buffer layer structure of the present invention, along with the increase of stacked number, described Al
1-xGa
xThe N layer increases progressively with the thickness ratio of described GaN layer.Preferably, same stacked described Al
1-xGa
xThe N layer is 0.1: 1～20: 1 with the thickness ratio of described GaN layer.
The present invention also provides a kind of preparation method of GaN base LED super-lattice buffer layer structure, and described preparation method comprises at least: Sapphire Substrate is provided, and forms by a plurality of GaN layers and a plurality of Al in described Sapphire Substrate
1-xGa
xThe N layer is alternately laminated stepped construction mutually, wherein, and 0.01≤x≤1, and this Al respectively
1-xGa
xGa component x increases progressively with the increase of stacked number in the N layer.
In the preparation method of GaN base LED super-lattice buffer layer structure of the present invention, described alternately laminated number is 2～30.
In the preparation method of GaN base LED super-lattice buffer layer structure of the present invention, control described Al by the Al atomicity of control feeding and the ratio of Ga atomicity
1-xGa
xThe value of x in the N layer.
In the preparation method of GaN base LED super-lattice buffer layer structure of the present invention, along with the increase of stacked number, described Al
1-xGa
xThe growth time ratio of N layer and described GaN layer increases progressively.Preferably, the described Al of same lamination
1-xGa
xThe growth time ratio of N layer and described GaN layer is 0.1: 1～20: 1.
As mentioned above, a kind of GaN base LED super-lattice buffer layer structure of the present invention and preparation method thereof has following beneficial effect: alternately prepare GaN layer and Al by the cycle on Sapphire Substrate
1-xGa
xThe N layer forms the resilient coating with superlattice structure, and by the Al atom of control feeding and the described Al of proportional control of Ga atom number
1-xGa
xThe variation of Ga component in the N layer, or by control extension GaN layer and Al
1-xGa
xThe time scale of N layer is controlled its thickness ratio, with the difference that reduces extension edge wavelength and centre wavelength gradually, makes extension centre wavelength and edge wavelength basically identical, thereby the uniformity of extension wavelength is improved.The present invention can also reduce time and the cost of follow-up chip and sorting flow process significantly, has improved final product output capacity.
Description of drawings
Fig. 1～3 are shown as the structural representation that GaN base LED super-lattice buffer layer structure of the present invention and preparation method thereof each step presents more.
The element numbers explanation
11 Sapphire Substrate
12 super-lattice buffer layer structures
121 the one GaN layers
122 the one Al
1-x1Ga
X1The N layer
123 the 2nd GaN layers
124 the 2nd Al
1-x2Ga
X2The N layer
127 n GaN layers
128 n Al
1-xnGa
XnThe N layer
122 ' Al
0.8Ga
0.2The N layer
124 ' Al
0.6Ga
0.4The N layer
126 ' Al
0.4Ga
0.6The N layer
128 ' Al
0.2Ga
0.8The N layer
Embodiment
Below by specific instantiation explanation embodiments of the present invention, those skilled in the art can understand other advantages of the present invention and effect easily by the disclosed content of this specification.The present invention can also be implemented or be used by other different embodiment, and the every details in this specification also can be based on different viewpoints and application, carries out various modifications or change under the spirit of the present invention not deviating from.
See also Fig. 1 to Fig. 3.Need to prove, the diagram that provides in the present embodiment only illustrates basic conception of the present invention in a schematic way, satisfy only show in graphic with the present invention in relevant assembly but not component count, shape and size drafting when implementing according to reality, kenel, quantity and the ratio of each assembly can be a kind of random change during its actual enforcement, and its assembly layout kenel also may be more complicated.
Shown in Fig. 2～3, the invention provides a kind of GaN base LED super-lattice buffer layer structure, described super-lattice buffer layer structure 12 is by a plurality of GaN layers and a plurality of Al
1-xGa
xThe N layer is alternately laminated stepped construction mutually, wherein, and 0.01≤x≤1, and this Al respectively
1-xGa
xGa component x increases progressively with the increase of stacked number in the N layer.Wherein, described alternately laminated stacked number is 2～30.Along with the increase of stacked number, described Al
1-xGa
xThe N layer increases progressively with the thickness ratio of described GaN layer.Preferably, same stacked described Al
1-xGa
xThe N layer is 0.1: 1～20: 1 with the thickness ratio of described GaN layer.
In the present embodiment, as shown in Figure 2, described super-lattice buffer layer structure 12 is for having Al
1-xGa
xThe super-lattice buffer layer structure of N/GaN superlattice structure comprises a GaN layer 121, is incorporated into the Al on a described GaN layer 121 surface
1-x1Ga
X1N layer 122, be incorporated into a described Al
1-x1Ga
X1The 2nd GaN layer 123 on N layer 122 surface, be incorporated into the 2nd Al on described the 2nd GaN layer 123 surface
1-x2Ga
X2N layer 124 ..., n GaN layer 127 and the n Al that is incorporated into described n GaN layer 127 surface
1-xNGa
XnN layer 128, wherein, x1＜x2＜...＜xn, 2≤n≤30.
Particularly, as shown in Figure 3, described resilient coating comprises: thickness is that a GaN layer 121 ', the thickness of 10nm is the Al of 5nm
0.8Ga
0.2N layer 122 ', thickness are that the 2nd GaN layer 123 ', the thickness of 10nm is the Al of 10nm
0.6Ga
0.4N layer 124 ', thickness are that the 3rd GaN layer 125 ', the thickness of 10nm is the Al of 15nm
0.4Ga
0.6N layer 126 ', thickness are that the 4th GaN layer 127 ' and the thickness of 10nm is the Al of 20nm
0.2Ga
0.8N layer 128 ' is to form Al
1-xGa
xN/GaN superlattice structure 12 '.Certainly, the present invention is not limited to this, and in other embodiments, described have an Al
1-xGa
xThe resilient coating of N/GaN superlattice structure can have different stacked numbers, different component ratio and different thickness proportion.
See also Fig. 1～Fig. 3, as shown in the figure, the present invention also provides a kind of preparation method of GaN base LED super-lattice buffer layer structure, and described preparation method comprises at least: Sapphire Substrate is provided, and forms by a plurality of GaN layers and a plurality of Al in described Sapphire Substrate
1-xGa
xThe N layer is alternately laminated stepped construction mutually, wherein, and 0.01≤x≤1, and this Al respectively
1-xGa
xGa component x increases progressively with the increase of stacked number in the N layer.Wherein, described alternately laminated number is 2～30.In the present embodiment, control described Al by the Al atomicity of control feeding and the ratio of Ga atomicity
1-xGa
xThe value of x in the N layer.Along with the increase of stacked number, described Al
1-xGa
xThe growth time ratio of N layer and described GaN layer increases progressively.Preferably, the described Al of same lamination
1-xGa
xThe growth time ratio of N layer and described GaN layer is 0.1: 1～20: 1.
See also Fig. 1～3, as shown in the figure, in the present embodiment, provide a Sapphire Substrate 11, at first select for use TMGa (trimethyl gallium) to be Ga source, NH
3(ammonia) adopts the metal organic chemical compound vapor deposition methods GaN layer 121 of growing for the N source in described Sapphire Substrate 11, selects for use TMGa (trimethyl gallium) to be Ga source, NH then
3(ammonia) be N source, TMAl (trimethyl aluminium) as the Al source, adopt the metal organic chemical compound vapor deposition methods Al that grows at a described GaN layer 121
1-x1Ga
X1N layer 122, as shown in Figure 1; Adopt identical means grow successively the 2nd GaN layer 123, the 2nd Al then
1-x2Ga
X2N layer 124 ... n GaN layer 127 and n Al
1-xnGa
Xn N layer 128, wherein, x1＜x2＜...＜xn, as shown in Figure 2.Wherein, 2≤n≤30, described Al
1-xGa
xThe value of x is controlled described GaN layer and described Al by the Al atomicity of control feeding and the ratio of Ga atomicity in the N layer
1-xGa
xThe thickness of N layer is then controlled by growth time.
In concrete implementation process, as shown in Figure 3, adopt the metal organic chemical compound vapor deposition method successively growth thickness be that a GaN layer 121 ', the thickness of 10nm is the Al of 5nm
0.8Ga
0.2N layer 122 ', thickness are that the 2nd GaN layer 123 ', the thickness of 10nm is the Al of 10nm
0.6Ga
0.4N layer 124 ', thickness are that the 3rd GaN layer 125 ', the thickness of 10nm is the Al of 15nm
0.4Ga
0.6N layer 126 ', thickness are that the 4th GaN layer 127 ' and the thickness of 10nm is the Al of 20nm
0.2Ga
0.8N layer 128 ' is to form Al
1-xGa
xN/GaN superlattice structure 12 '.Certainly, the present invention is not limited to this, and in other embodiments, described have an Al
1-xGa
xThe resilient coating of N/GaN superlattice structure can have different stacked numbers, different component ratio and different thickness proportion.
In sum, a kind of GaN base LED super-lattice buffer layer structure of the present invention and preparation method thereof alternately prepares GaN layer and Al by the cycle on Sapphire Substrate
1-xGa
xThe N layer forms the resilient coating with superlattice structure, and by the Al atom of control feeding and the described Al of proportional control of Ga atom number
1-xGa
xThe variation of Ga component in the N layer, or by control extension GaN layer and Al
1-xGa
xThe time scale of N layer is controlled its thickness ratio, with the difference that reduces extension edge wavelength and centre wavelength gradually, makes extension centre wavelength and edge wavelength basically identical, thereby the uniformity of extension wavelength is improved.The present invention can also reduce time and the cost of follow-up chip and sorting flow process significantly, has improved final product output capacity.So the present invention has effectively overcome various shortcoming of the prior art and the tool high industrial utilization.
Above-described embodiment is illustrative principle of the present invention and effect thereof only, but not is used for restriction the present invention.Any person skilled in the art scholar all can be under spirit of the present invention and category, and above-described embodiment is modified or changed.Therefore, have in the technical field under such as and know that usually the knowledgeable modifies or changes not breaking away from all equivalences of finishing under disclosed spirit and the technological thought, must be contained by claim of the present invention.
Claims (9)
1. a GaN base LED super-lattice buffer layer structure is characterized in that described super-lattice buffer layer structure is by a plurality of GaN layers and a plurality of Al
1-xGa
xThe N layer is alternately laminated stepped construction mutually, wherein, and 0.01≤x≤1, and this Al respectively
1-xGa
xGa component x increases progressively with the increase of stacked number in the N layer.
2. GaN according to claim 1 base LED super-lattice buffer layer structure, it is characterized in that: described alternately laminated number is 2～30.
3. GaN according to claim 1 base LED super-lattice buffer layer structure is characterized in that: along with the increase of stacked number, and described Al
1-xGa
xThe N layer increases progressively with the thickness ratio of described GaN layer.
4. GaN base LED super-lattice buffer layer structure according to claim 3 is characterized in that: same stacked described Al
1-xGa
xThe N layer is 0.1: 1～20: 1 with the thickness ratio of described GaN layer.
5. the preparation method of GaN base LED super-lattice buffer layer structure is characterized in that described preparation method comprises at least:
Sapphire Substrate is provided, and forms by a plurality of GaN layers and a plurality of Al in described Sapphire Substrate
1-xGa
xThe N layer is alternately laminated stepped construction mutually, wherein, and 0.01≤x≤1, and this Al respectively
1-xGa
xGa component x increases progressively with the increase of stacked number in the N layer.
6. the preparation method of GaN base LED super-lattice buffer layer structure according to claim 5 is characterized in that described alternately laminated number is 2～30.
7. the preparation method of GaN base LED super-lattice buffer layer structure according to claim 5 is characterized in that, controls described Al by the Al atomicity of control feeding and the ratio of Ga atomicity
1-xGa
xThe value of x in the N layer.
8. the preparation method of GaN base LED super-lattice buffer layer structure according to claim 5 is characterized in that, along with the increase of stacked number, and described Al
1-xGa
xThe growth time ratio of N layer and described GaN layer increases progressively.
9. the preparation method of GaN base LED super-lattice buffer layer structure according to claim 8 is characterized in that the described Al of same lamination
1-xGa
xThe growth time ratio of N layer and described GaN layer is 0.1: 1～20: 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210051922.6A CN103296161B (en) | 2012-03-01 | 2012-03-01 | A kind of GaN base LED superlattice buffer layer structure and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210051922.6A CN103296161B (en) | 2012-03-01 | 2012-03-01 | A kind of GaN base LED superlattice buffer layer structure and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103296161A true CN103296161A (en) | 2013-09-11 |
| CN103296161B CN103296161B (en) | 2016-01-27 |
Family
ID=49096745
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210051922.6A Expired - Fee Related CN103296161B (en) | 2012-03-01 | 2012-03-01 | A kind of GaN base LED superlattice buffer layer structure and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103296161B (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103806104A (en) * | 2014-02-19 | 2014-05-21 | 中国科学院半导体研究所 | Method for preparing AlGaN film with high content of Al |
| CN103904177A (en) * | 2014-02-28 | 2014-07-02 | 华灿光电(苏州）有限公司 | Light emitting diode epitaxial wafer and manufacturing method thereof |
| CN104201257A (en) * | 2014-09-17 | 2014-12-10 | 湘能华磊光电股份有限公司 | Method for regulating and controlling LED epitaxial wafer wavelength uniformity through buffer layer |
| CN106098882A (en) * | 2016-07-25 | 2016-11-09 | 华灿光电（浙江）有限公司 | A kind of LED epitaxial slice and preparation method thereof |
| WO2018195702A1 (en) * | 2017-04-24 | 2018-11-01 | 苏州晶湛半导体有限公司 | Semiconductor structure, and manufacturing method of semiconductor structure |
| US11581269B2 (en) | 2019-10-17 | 2023-02-14 | Samsung Electronics Co., Ltd. | Semiconductor thin film structures and electronic devices including the same |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1905222A (en) * | 2006-07-26 | 2007-01-31 | 武汉华灿光电有限公司 | Method for avoiding or reducing V-defect of blue-green light LED material |
| EP1343927B1 (en) * | 2000-12-14 | 2007-04-25 | Nitronex Corporation | Gallium nitride materials and methods for forming layers thereof |
| CN101645480A (en) * | 2009-06-22 | 2010-02-10 | 武汉华灿光电有限公司 | Method for enhancing antistatic ability of GaN-based light-emitting diode |
| CN102157654A (en) * | 2011-03-30 | 2011-08-17 | 重庆大学 | Inverted mounting LED chip based on double-faced shrinkage pool substrate and component gradual change buffer layer |
| CN102326266A (en) * | 2009-10-20 | 2012-01-18 | 松下电器产业株式会社 | Light-emitting diode element and method for manufacturing same |
-
2012
- 2012-03-01 CN CN201210051922.6A patent/CN103296161B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1343927B1 (en) * | 2000-12-14 | 2007-04-25 | Nitronex Corporation | Gallium nitride materials and methods for forming layers thereof |
| CN1905222A (en) * | 2006-07-26 | 2007-01-31 | 武汉华灿光电有限公司 | Method for avoiding or reducing V-defect of blue-green light LED material |
| CN101645480A (en) * | 2009-06-22 | 2010-02-10 | 武汉华灿光电有限公司 | Method for enhancing antistatic ability of GaN-based light-emitting diode |
| CN102326266A (en) * | 2009-10-20 | 2012-01-18 | 松下电器产业株式会社 | Light-emitting diode element and method for manufacturing same |
| CN102157654A (en) * | 2011-03-30 | 2011-08-17 | 重庆大学 | Inverted mounting LED chip based on double-faced shrinkage pool substrate and component gradual change buffer layer |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103806104A (en) * | 2014-02-19 | 2014-05-21 | 中国科学院半导体研究所 | Method for preparing AlGaN film with high content of Al |
| CN103904177A (en) * | 2014-02-28 | 2014-07-02 | 华灿光电(苏州）有限公司 | Light emitting diode epitaxial wafer and manufacturing method thereof |
| CN103904177B (en) * | 2014-02-28 | 2018-01-12 | 华灿光电(苏州）有限公司 | LED epitaxial slice and its manufacture method |
| CN104201257A (en) * | 2014-09-17 | 2014-12-10 | 湘能华磊光电股份有限公司 | Method for regulating and controlling LED epitaxial wafer wavelength uniformity through buffer layer |
| CN106098882A (en) * | 2016-07-25 | 2016-11-09 | 华灿光电（浙江）有限公司 | A kind of LED epitaxial slice and preparation method thereof |
| CN106098882B (en) * | 2016-07-25 | 2020-08-18 | 华灿光电（浙江）有限公司 | Light emitting diode epitaxial wafer and preparation method thereof |
| WO2018195702A1 (en) * | 2017-04-24 | 2018-11-01 | 苏州晶湛半导体有限公司 | Semiconductor structure, and manufacturing method of semiconductor structure |
| US10497783B2 (en) | 2017-04-24 | 2019-12-03 | Enkris Semiconductor, Inc | Semiconductor structure and method of preparing semiconductor structure |
| US11581269B2 (en) | 2019-10-17 | 2023-02-14 | Samsung Electronics Co., Ltd. | Semiconductor thin film structures and electronic devices including the same |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103296161B (en) | 2016-01-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103296151A (en) | Method for reducing warping stress of LED epitaxy | |
| CN103296161B (en) | A kind of GaN base LED superlattice buffer layer structure and preparation method thereof | |
| CN105489723B (en) | Nitride bottom and preparation method thereof | |
| TWI221638B (en) | Group III nitride semiconductor crystal, production method thereof and group III nitride semiconductor epitaxial wafer | |
| CN104157750B (en) | Light-emitting diode epitaxial growth method | |
| CN105023979A (en) | A GaN-based LED epitaxial wafer and a manufacturing method thereof | |
| CN104392909A (en) | AlN epitaxial film growing method | |
| CN107482092B (en) | A kind of extension processing method of 395nm short wavelength UV LED structure | |
| CN104201263A (en) | Light emitting diode epitaxy and growing method of light emitting diode electronic barrier layer | |
| CN206558530U (en) | A kind of deep ultraviolet LED chip | |
| CN104485400A (en) | Epitaxial structure of III-V nitride and growth method thereof | |
| CN103715071B (en) | A kind of MOCVD epitaxy processing method of aluminum indium gallium nitrogen quaternary alloy thin-film material | |
| CN108878609B (en) | The ALN buffer layer and its epitaxial growth method of LED | |
| CN103498193B (en) | A kind of epitaxial growth method that improves material crystals quality | |
| CN104952986A (en) | Production method of GaN-based white LED epitaxial structure | |
| CN103560181B (en) | LED epitaxial growing method | |
| CN106252211A (en) | A kind of preparation method of AlN epitaxial layer | |
| JP5464004B2 (en) | Group III nitride semiconductor crystal manufacturing method | |
| CN107275454B (en) | A kind of epitaxial growth method of light emitting diode | |
| CN108039321A (en) | Using SiC as substrate GaN-based HEMT device epitaxial growth method | |
| CN102465334A (en) | Method for growing GaN-based LED epitaxial layer | |
| Lundin et al. | MOVPE of III-N LED structures with short technological process | |
| CN104733576B (en) | LED epitaxial slice and preparation method thereof | |
| CN105742434A (en) | Nitride luminous diode and preparation method thereof | |
| CN106129193A (en) | LED and the growing method thereof of light efficiency can be improved |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160127 |