CN103295941A - Hetero-junction plate-type PECVD (plasma enhanced chemical vapor deposition) carrier plate - Google Patents
Hetero-junction plate-type PECVD (plasma enhanced chemical vapor deposition) carrier plate Download PDFInfo
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- CN103295941A CN103295941A CN2013102165451A CN201310216545A CN103295941A CN 103295941 A CN103295941 A CN 103295941A CN 2013102165451 A CN2013102165451 A CN 2013102165451A CN 201310216545 A CN201310216545 A CN 201310216545A CN 103295941 A CN103295941 A CN 103295941A
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- carrier plate
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Abstract
The invention discloses a hetero-junction plate-type PECVD (plasma enhanced chemical vapor deposition) carrier plate. The PECVD carrier plate comprises a carrier plate base body, a plurality of hollow grooves are formed in the carrier plate base body, four inner walls of each hollow groove are inclined slopes, and press frames matched with the hollow grooves are arranged in the hollow grooves. During silicon wafer film-coating, ionized gas can be completely prevented from flowing on the back of a silicon wafer to form reverse doping so as to avoid leakage current, so that short-circuit current is increased, parallel resistance large in resistance value is formed, and efficiency of a cell piece is improved. Fragment frequency can be lowered by using metal press lines to fix the press frames on the silicon wafer, so that cost is reduced.
Description
Technical field
The present invention relates to a kind of PECVD plated film support plate, particularly relate to the board-like PECVD support plate of a kind of heterojunction, belong to technical field of solar cell manufacturing.
Background technology
The production process of solar cell comprises steps such as silicon chip making herbs into wool, diffusion system knot, plasma gas-phase deposit (PECVD) plated film, etching, silk screen printing.Carry out in the process of plating at the battery sheet, there are some ionized gases to go to the back side of battery sheet unavoidably and form the anti-edge of mixing or being attached to the battery sheet, in case ionized gas is gone to the cell back face or is attached to the edge of battery sheet, will occur instead mixing, the phenomenon of leakage current, low and resistance, such battery sheet is exactly the poor efficiency sheet; Because the phenomenon of fragment appears in vacuum environment influence unavoidably, causing thus that production efficiency is low, cost is high in coating process, is a problem that must solve at present so how to form high short circuit current, improve parallel resistance, reduce the fragmentation of battery sheet.
Summary of the invention
The object of the present invention is to provide the board-like PECVD support plate of a kind of heterojunction, make silicon chip in coating process, can not occur being blown tiltedly, being turned over by blowing and cause fragmentation or instead mix, the phenomenon of leakage current, low and resistance.
For solving the problems of the technologies described above, technical scheme of the present invention is such, the board-like PECVD support plate of a kind of heterojunction, comprise the support plate matrix, it is characterized in that, described support plate matrix is provided with some hollow slots, and described hollow slots four sides inwall is slope, is provided with the press box that cooperates with hollow slots in the described hollow slots.
In a specific embodiment of the present invention, described hollow slots edge is provided with the metal line ball for restriction press box upper-lower position.
Preferably, the described slope gradient is 30～60 °.
Preferably, the press box border width is 0.5mm.
The advantage of technical scheme provided by the present invention is, can stop ionized gas in silicon chip film-coated process goes to the silicon chip back side and goes and form the anti-leakage current of mixing to avoid occurring, thereby the increase short circuit current forms the very big also resistance of resistance, improves the efficient of battery sheet; The applied metal line ball fixedly press box above the silicon chip can reduce fragment rate, thereby reduces cost.
Description of drawings
Fig. 1 is structural representation of the present invention;
Fig. 2 is structure vertical view of the present invention.
Embodiment
The invention will be further described below in conjunction with embodiment, but not as a limitation of the invention.
The board-like PECVD carrying board structure of heterojunction of the present invention as shown in Figures 1 and 2, band comprises support plate matrix 1, support plate matrix 1 is provided with some hollow slots 2, hollow slots 2 four sides inwalls are slope 21, the gradient of slope 21 is 30～60 °, the excessive gradient can make silicon chip tumble in hollow slots 2, is provided with the press box 3 that cooperates with hollow slots 2 in the hollow slots 2.After silicon chip 5 is put into hollow slots 2, put into press box 3 by fixing silicon chip 5 positions of press box 3, press box 3 border widths are typically chosen in 0.5mm, reach the balance of plated film area and restriction silicon chip 5 effects, the wide then silicon chip of width effective area reduces, and width is narrow then to be difficult to fixedly 5 of silicon.Be provided with the aluminum titanium alloy line ball 4 for restriction press box 3 upper-lower positions in addition at hollow slots 2 edges, avoid that press box 3 ejects in the coating process in hollow slots 2.
Claims (4)
1. board-like PECVD support plate of heterojunction, comprise support plate matrix (1), it is characterized in that described support plate matrix (1) is provided with some hollow slots (2), described hollow slots (2) four sides inwall (21) is slope, is provided with the press box (3) that cooperates with hollow slots (2) in the described hollow slots (2).
2. the board-like PECVD support plate of heterojunction according to claim 1 is characterized in that: described hollow slots (2) edge is provided with the metal line ball (4) for restriction press box (3) upper-lower position.
3. the board-like PECVD support plate of heterojunction according to claim 1, it is characterized in that: described slope (21) gradient is 30～60 °.
4. the board-like PECVD support plate of heterojunction according to claim 1, it is characterized in that: press box (3) border width is 0.5mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013102165451A CN103295941A (en) | 2013-05-31 | 2013-05-31 | Hetero-junction plate-type PECVD (plasma enhanced chemical vapor deposition) carrier plate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013102165451A CN103295941A (en) | 2013-05-31 | 2013-05-31 | Hetero-junction plate-type PECVD (plasma enhanced chemical vapor deposition) carrier plate |
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| Publication Number | Publication Date |
|---|---|
| CN103295941A true CN103295941A (en) | 2013-09-11 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2013102165451A Pending CN103295941A (en) | 2013-05-31 | 2013-05-31 | Hetero-junction plate-type PECVD (plasma enhanced chemical vapor deposition) carrier plate |
Country Status (1)
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| CN (1) | CN103295941A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115125510A (en) * | 2022-06-22 | 2022-09-30 | 中威新能源(成都)有限公司 | Chemical vapor deposition method, carrier, cell piece and heterojunction cell |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11100669A (en) * | 1997-09-29 | 1999-04-13 | Nec Corp | Substrate mounting jig |
| CN1766156A (en) * | 2004-10-29 | 2006-05-03 | 精碟科技股份有限公司 | Filming apparatus |
| CN201220963Y (en) * | 2008-05-30 | 2009-04-15 | 上海太阳能科技有限公司 | Solar cell plate type PECVD apparatus auxiliary tooling |
| JP2010177267A (en) * | 2009-01-27 | 2010-08-12 | Ulvac Japan Ltd | Conveyance tray, and vacuum treatment apparatus using the conveyance tray |
| CN202234026U (en) * | 2011-09-28 | 2012-05-30 | 应孝华 | Cabinet body |
| CN102683250A (en) * | 2012-05-22 | 2012-09-19 | 山东力诺太阳能电力股份有限公司 | Crystalline silicon solar cell coating equipment |
| CN102719807A (en) * | 2011-03-30 | 2012-10-10 | 北京北方微电子基地设备工艺研究中心有限责任公司 | An electrostatic-adsorbing support plate, an apparatus and a technology for producing film |
| CN203325860U (en) * | 2013-05-31 | 2013-12-04 | 国电光伏有限公司 | Hetero-junction plate-type PECVD support plate |
-
2013
- 2013-05-31 CN CN2013102165451A patent/CN103295941A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11100669A (en) * | 1997-09-29 | 1999-04-13 | Nec Corp | Substrate mounting jig |
| CN1766156A (en) * | 2004-10-29 | 2006-05-03 | 精碟科技股份有限公司 | Filming apparatus |
| CN201220963Y (en) * | 2008-05-30 | 2009-04-15 | 上海太阳能科技有限公司 | Solar cell plate type PECVD apparatus auxiliary tooling |
| JP2010177267A (en) * | 2009-01-27 | 2010-08-12 | Ulvac Japan Ltd | Conveyance tray, and vacuum treatment apparatus using the conveyance tray |
| CN102719807A (en) * | 2011-03-30 | 2012-10-10 | 北京北方微电子基地设备工艺研究中心有限责任公司 | An electrostatic-adsorbing support plate, an apparatus and a technology for producing film |
| CN202234026U (en) * | 2011-09-28 | 2012-05-30 | 应孝华 | Cabinet body |
| CN102683250A (en) * | 2012-05-22 | 2012-09-19 | 山东力诺太阳能电力股份有限公司 | Crystalline silicon solar cell coating equipment |
| CN203325860U (en) * | 2013-05-31 | 2013-12-04 | 国电光伏有限公司 | Hetero-junction plate-type PECVD support plate |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115125510A (en) * | 2022-06-22 | 2022-09-30 | 中威新能源(成都)有限公司 | Chemical vapor deposition method, carrier, cell piece and heterojunction cell |
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| AD01 | Patent right deemed abandoned | ||
| AD01 | Patent right deemed abandoned |
Effective date of abandoning: 20170111 |