CN103293572B - TE polarization spectrum selective absorber - Google Patents
TE polarization spectrum selective absorber Download PDFInfo
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- CN103293572B CN103293572B CN201310154299.1A CN201310154299A CN103293572B CN 103293572 B CN103293572 B CN 103293572B CN 201310154299 A CN201310154299 A CN 201310154299A CN 103293572 B CN103293572 B CN 103293572B
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Abstract
Provided is a TE polarization spectrum selective absorber for visible light wave bands (400-800nm). The period, the duty ratio and the thickness of the top raster of the absorber are 310 nanometers-314 nanometers, 0.35-0.37 and 216 nanometers-220 nanometers respectively, and the film thickness of a middle dielectric medium isolating layer is 103 nanometers-107 nanometers. When TE polarized light irradiates in a range of minus 15 degrees to 15 degrees, incident light in a narrow wave band range near central wave length 561 nanometers will be absorbed. Along with changes of structural parameters and changes of incident angles, small frequency shift of absorption spectrum will occur, small shift of peak value absorption wave lengths then occur accordingly, absorption at the position of all the peak value wave lengths can always keep approximately 100%, and the half height and the full width of the absorption spectrum are always smaller than 20 nanometers. The TE polarization spectrum selective absorber is manufactured by an electronic direct writing device combined with a micro-electronic deep etching technology, materials are convenient to take, manufacturing cost is low, mass production can be achieved, and important practical prospects is achieved.
Description
Technical field
The present invention relates to spectral selection absorber, particularly a kind of TE polarization for visible light wave range (direction of vibration of electric field intensity is perpendicular to the plane of incidence) spectral selection absorber.
Background technology
In order to the spectral selection of realizing ideal absorbs, have already been proposed many methods, for example, metal nanoparticle, Meta Materials etc.In the nanostructured that these propose, one-dimensional grating structure, as a kind of important and simple device of structure, can be used for strengthening and absorbs.Compared with the Meta Materials of other labyrinth, the major advantage of grating base device is that its designing and making is all more prone to.By optimizing, the perfection that can realize nearly 100% in resonance wave strong point absorbs.Based on the compact conformation of the spectral selection absorber of optical grating construction, in wide ranges of incidence angles, have good optical property, therefore, it is with a wide range of applications as novel absorption device.
The people such as C.Wu propose a kind of simple grating base device, ultra-thin, the wide angle that can be used for realizing near infrared band perfectly absorbs, this grating base device can realize the absorption of nearly 100% in resonance wave strong point, and in the ranges of incidence angles of 0 ~ 45 ° to the absorption of P polarization higher than 95%, the absorption of S polarization higher than 90%[see at first technology 1:C.Wu et al., Proc.SPIE 7029, Metamaterials:Fundamentals and Applications, 70290W (2008)].Afterwards, the people such as C.Wu are Theoretical Design and experimental verification a kind of simple grating base Meta Materials wide angle plasma absorption device again, it has narrow-band spectrum selective absorbing/radiation characteristic, the infrared image element of sub-diffraction size can be used as [see at first technology 2:C.Wu et al., Physical Review B 84,075102 (2011)].The people such as J.A.Mason devise a kind of grating base meta-material absorber for middle-infrared band, there is high selective and large angle independence (may be used for the incidence angle of 0-45 °) [see at first technology 3:J.A.Mason et al., Applied Physics Letters 98,241105-241103 (2011)].The people such as M.Diem devise a perfect absorption/heat radiation device, be 99.99% in the peak absorbance of resonance wave strong point and high absorption can be kept in very large ranges of incidence angles, except a less centre frequency moves [see at first skill 4:M.Diemet al., Physical Review B 79,033101 (2009)].However, up to the present, the selective absorbing device based on optical grating construction is mainly TM polarization and works in infrared band.This is because to TM polarization, perfect selective absorbing can be obtained by ultra-thin optical grating construction, and the advantage of ultra-thin optical grating construction to be it have larger angle independence, particularly region of ultra-red (due to Long wavelength region have larger wavelength-physical dimension than).
Rectangular raster utilizes micro-nano technology technique, the grating with rectangle flute profile that substrate processes.The Diffraction Problems of subwavelength grating with rectangular grooves, can not be processed by simple scalar optical grating diffraction, and must adopt the Maxwell equation of vector form and in conjunction with boundary condition, accurately be solved by the computer program of coding.The people such as Moharam have given the algorithm [see at first technology 5:M.G.Moharam et al., J.Opt.Soc.Am.A.12,1077 (1995)] of rigorous coupled wave approach, can solve the Diffraction Problems of this kind of sub-wave length grating.But as far as we know, up to the present, also nobody is given in the TE polarization spectrum selective absorbing device based on optical grating construction that vitreous silica substrate makes for visible light wave range.
CN101344604A discloses a kind of reflection type quartz polarization beam splitting optical grating for 1550 nano wavebands, is the immediate prior art of the application.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of TE polarization spectrum selective absorbing device for visible light wave range.This selective absorbing device is when TE polarised light is incident within the scope of-15 degree ~ 15 degree, incident light in centre wavelength 561 nm narrower wavelength band will be absorbed, along with the change of structural parameters and incident angle, less frequency displacement can be there is in absorption spectrum, less frequency displacement can be there is in peak absorbtivity wavelength thereupon, but the absorption of nearly 100% can be remained at each peak wavelength place, and the full width at half maximum of absorption line is less than 20 nanometers always.Therefore, this spectral selection absorber has important practical value.
Technical solution of the present invention is as follows:
A kind of TE polarization spectrum selective absorbing device for visible light wave range, it is the silverskin of evaporation successively on vitreous silica sheet, vitreous silica separation layer and silver layer that feature is that it is formed, this silver layer carves grating, cycle of this grating, dutycycle and thickness be respectively 310 ~ 314 nanometers, 0.35 ~ 0.37,216 ~ 220 nanometers, the thickness of described vitreous silica separation layer is 103 ~ 107 nanometers, and the thickness of described silverskin is greater than 100 nanometers.
Cycle of described grating, dutycycle and thickness are respectively 312 nanometers, 0.36 and 218 nanometers, and the thickness of intermediate dielectric separation layer is 105 nanometers.
Technique effect of the present invention is as follows:
Particularly when the top light grid cycle of absorber, dutycycle and thickness are respectively 312 nanometers, 0.36 and 218 nanometers, when the thickness of intermediate dielectric separation layer is 105 nanometer, when the TE polarised light of 400-800nm wave band incides this grating in the scope of-15 degree ~ 15 degree, incident light in centre wavelength 561 nm narrower wavelength band will be absorbed, be approximately 100% in the absorptivity of central wavelength, the full width at half maximum of absorption line is 18nm.
The present invention have flexible and convenient to use, peak absorbance efficiency is high, the advantage such as the full width at half maximum of absorption line is less, it is a kind of ideal absorption device, utilize electron-beam direct writing device in conjunction with Microelectronic etching technique, can produce in enormous quantities, at low cost, absorber performance after etching is stable, reliable, has important practical prospect.
Accompanying drawing explanation
Fig. 1 is the geometrized structure graph of the present invention for the TE polarization spectrum selective absorbing device of visible light wave range.
In figure, 1 represents region 1 air, and (refractive index is n
1), 2 represent region 2 vitreous silica, and (refractive index is n
2), 3 represent grating, and grating layer material is silver (Ag), and 4 represent dielectric isolation layer, and material is vitreous silica, and 5 is bottom metal layers, and material is Ag, and 6 represent the incidence of TE polarised light.D is screen periods, and f is grating dutycycle, h
1and h
2be respectively the thickness degree of grating layer and dielectric isolation layer.
Fig. 2 is the curve of absorption efficiency with wavelength change of the TE polarised light of one embodiment of the invention.
Fig. 3 is the X-Y scheme of absorption efficiency with incidence angle and wavelength change of embodiment in Fig. 2.
Detailed description of the invention
Below in conjunction with embodiment and accompanying drawing, the invention will be further described, but should not limit the scope of the invention with this.
First refer to Fig. 1, Fig. 1 is the geometrized structure graph of the present invention for the TE polarization spectrum selective absorbing device of visible light wave range.In figure, region 1,2 is all uniform, is respectively air (refractive index n
1=1) and vitreous silica (refractive index n
2=1.46), TE polarised light (corresponding to the direction of vibration of electric field intensity perpendicular to the plane of incidence) at a certain angle θ incide this device.As seen from the figure, TE polarization spectrum selective absorbing device of the present invention, it is formed is the silverskin 5 of evaporation successively on vitreous silica sheet 2, vitreous silica separation layer 4 and silver layer, this silver layer carves grating 3, cycle of this grating 3, dutycycle and thickness be respectively 310 ~ 314 nanometers, 0.35 ~ 0.37,216 ~ 220 nanometers, the thickness of described vitreous silica separation layer 4 is 103 ~ 107 nanometers, and the thickness of described silverskin 5 is greater than 100 nanometers.
Table 1 gives TE polarization spectrum selective absorbing device of the present invention a series of embodiment, and in table, d is screen periods, and f is grating dutycycle, h
1and h
2be respectively the thickness of grating layer and dielectric isolation layer, the absorption efficiency of wavelength 561 nanometers centered by A, λ
maxrepresent the peak wavelength of each absorption spectrum, A
maxrepresent the absorption efficiency at the peak wavelength place of absorption spectrum.In the structure of fig. 1, the silver-colored mould in bottom is generally selected thicklyer (to be usually only greater than silver in the skin depth of visible light wave range, silver is generally tens nanometers in the skin depth of visible light wave range, we select the silver-colored mould thickness in bottom to be 200nm in the present embodiment, depart from the absorption efficiency of this thickness on device not affect), thus avoid Transmission light to go out.Due to the transmission (T=0) that it can stop light, thus the absorption efficiency of device can be calculated by reflection efficiency R:
A≡1-R (1)
When making the present invention and being used for the TE polarization spectrum selective absorbing device of visible light wave range, by table 1 suitably select the cycle of grating, dutycycle, thickness and dielectric isolation layer thickness just can obtain the TE polarization selectivity absorber of high-selenium corn efficiency in certain ranges of incidence angles.
Fig. 2 is the curve of absorption efficiency with wavelength change of the TE polarised light of one embodiment of the invention.
Fig. 3 is the X-Y scheme of absorption efficiency with incidence angle and wavelength change of embodiment in Fig. 2.
TE polarization spectrum selective absorbing device of the present invention, have flexible and convenient to use, peak absorbance efficiency is high, peak wavelength that is absorption spectrum moves the advantages such as full width at half maximum that is less, absorption line is less, it is a kind of ideal absorption device, utilize electron-beam direct writing device in conjunction with Microelectronic etching technique, can produce in enormous quantities, at low cost, absorber performance after etching is stable, reliable, has important practical prospect.
The parameter of a series of embodiment grating of table 1TE polarization spectrum selective absorbing device
Claims (2)
1. the TE polarization spectrum selective absorbing device for visible light wave range, it is formed is the silverskin (5) of evaporation successively on vitreous silica sheet (2), vitreous silica separation layer (4) and silver layer, this silver layer carves grating (3), it is characterized in that, cycle of this grating (3), dutycycle and thickness be respectively 310 ~ 314 nanometers, 0.35 ~ 0.37,216 ~ 220 nanometers, the thickness of described vitreous silica separation layer (4) is 103 ~ 107 nanometers, and the thickness of described silverskin (5) is greater than 100 nanometers.
2. TE polarization spectrum selective absorbing device according to claim 1, it is characterized in that described grating (3) cycle, dutycycle and thickness are respectively 312 nanometers, 0.36 and 218 nanometers, the thickness of described vitreous silica separation layer (4) is 105 nanometers.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104777532B (en) * | 2015-04-03 | 2017-02-22 | 中国科学院上海光学精密机械研究所 | Ultra-narrow-band TE (transverse electric) polarizing spectrum selective absorber based on cascaded fiber grating structure |
| CN106950631A (en) * | 2017-05-09 | 2017-07-14 | 华中科技大学 | A kind of infrared wave-absorbing body and preparation method based on medium micro-pillar array |
| CN110740277B (en) * | 2019-10-29 | 2022-06-21 | Oppo广东移动通信有限公司 | Image sensor, electronic device and imaging method |
| CN111580302B (en) * | 2020-06-16 | 2023-01-10 | 京东方科技集团股份有限公司 | Reflective liquid crystal display panel and display device |
| CN114582990B (en) * | 2022-02-17 | 2022-08-30 | 浙江大学 | Ultra-wideband random spectrum field effect transistor based on super surface |
| CN114895394B (en) * | 2022-07-15 | 2022-09-30 | 华侨大学 | Sub-wavelength grating structure with wide-band optical energy storage characteristic and preparation method thereof |
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| TWI223103B (en) * | 2003-10-23 | 2004-11-01 | Ind Tech Res Inst | Wire grid polarizer with double metal layers |
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| WO2005089098A3 (en) * | 2004-01-14 | 2006-03-02 | Univ California | Ultra broadband mirror using subwavelength grating |
| CN101002117A (en) * | 2004-06-11 | 2007-07-18 | 纳诺奥普托公司 | Optical films and methods of making the same |
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