CN103273413A - Chemical-mechanical polishing device - Google Patents
Chemical-mechanical polishing device Download PDFInfo
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- CN103273413A CN103273413A CN2013101216136A CN201310121613A CN103273413A CN 103273413 A CN103273413 A CN 103273413A CN 2013101216136 A CN2013101216136 A CN 2013101216136A CN 201310121613 A CN201310121613 A CN 201310121613A CN 103273413 A CN103273413 A CN 103273413A
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- mechanical polishing
- thermostat
- polishing device
- chemical mechanical
- grinding head
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- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
A chemical-mechanical polishing device comprises a rotating shaft, a polishing table, a polishing pad, a polishing head, a force application device, a thermostat and a thermostatic controller, wherein the polishing table is arranged on the end portion of the rotating shaft; the polishing pad is arranged on one side, different from the rotating shaft, of the polishing table; the polishing head is provided with a built-in hollow containing space and arranged to face the polishing pad; the force application device acts on the polishing head; the thermostat contains thermostatic liquid and is communicated with the hollow containing space in the polishing head through a first pipeline and a second pipeline which form circulation, the thermostatic controller is electrically connected with the thermostat and used for controlling the temperature of the thermostat. Through circulation of the thermostatic liquid of the thermostat, temperature control over the polishing head and a wafer to be polished is achieved, and the temperature of the thermostat is regulated through the thermostatic controller, so that chemical-mechanical polishing speed is accurately controlled; the chemical-mechanical polishing device not only reduces the defects such as sinking and corrosion, but also improves stability of the chemical-mechanical polishing technology and promotes the yield of products.
Description
Technical field
The present invention relates to technical field of semiconductor device, relate in particular to a kind of chemical mechanical polishing device.
Background technology
Cmp (Chemical Mechanical Polishing, CMP) be one by chemical reaction process and the coefficient technology of mechanical lapping process.Normally, applying certain pressure at first grinding head described in the chemical grinding process makes described first wafer frontside be close to first grinding pad at first wafer rear.Described first grinding head drives described first wafer and the equidirectional rotation of described first grinding pad simultaneously, makes the front of described first wafer and described first grinding pad produce mechanical friction.In process of lapping, remove the thin film of crystal column surface by a series of complicated mechanical and chemical action, thereby reach the purpose of described first wafer planarizationization.
But as ground conventionally known to one of skill in the art, in chemical mechanical planarization process, a series of chemical reaction and friction will produce a large amount of heat, and lapping liquid can't be taken away this part heat fast.Along with process of lapping continue carry out, described silicon base temperature will raise gradually, and impels chemical reaction to accelerate, and then uncontrollable lifting grinding rate, on the one hand, too fast grinding rate causes defectives such as silicon base surface depression or corrosion easily; On the other hand, this process need described grinding rate of considerable time just tends towards stability.As seen, when existing chemical mechanical polishing device carried out cmp, poor controllability, accuracy were low, finally caused the silicon base metallization processes that has an even surface that there is great bad hidden danger in product quality.
So at the problem that prior art exists, this case designer relies on the industry experience for many years of being engaged in, the active research improvement is so had a kind of chemical mechanical polishing device of invention and chemical mechanical polishing device thereof.
Summary of the invention
The present invention be directed in the prior art, traditional chemical mechanical polishing device produces a large amount of heat in chemical mechanical planarization process, and can't quick heat radiating, and cause the silicon base temperature to raise gradually, and impel chemical reaction to accelerate, and then uncontrollable lifting grinding rate, cause defectives such as flatening process instability that a kind of chemical mechanical polishing device is provided.
In order to address the above problem, the invention provides a kind of chemical mechanical polishing device, described chemical mechanical polishing device comprises: rotating shaft, described rotating shaft is dynamic action lower edge axial-movement externally; Grinding table is arranged on the end of described rotating shaft; Grinding pad is arranged on a side that differs from described rotating shaft of described grinding table, and is used for the described wafer to be ground of carrying; Grinding head has built-in hollow accommodation space, and is towards setting with described grinding pad, forms the accommodation space of accommodating described wafer to be ground between described grinding head and described grinding pad; Force application apparatus, described force application apparatus act on the described grinding head, to control the stressed of described grinding head; Thermostat has constant temperature liquid, and is communicated with empty accommodation space among the described grinding head by first pipeline and second pipeline that forms circulation; And radiator valve, described radiator valve is electrically connected with described thermostat, and in order to control the temperature of described thermostat.
Alternatively, the grinding head of described chemical mechanical polishing device further comprises the temperature sensor that is arranged on the described grinding head.
Alternatively, the constant temperature liquid of described thermostat is the aqueous solution.
Alternatively, described first pipeline is water inlet pipe, and described second pipeline is outlet pipe.
Alternatively, the temperature range of described thermostat is 20～100 ℃.
In sum, chemical mechanical polishing device of the present invention is by the circulation of the constant temperature liquid of thermostat, realization is to the temperature control of described grinding head and wafer to be ground, and by described radiator valve the temperature of described thermostat is regulated, with realization the speed of described cmp is accurately controlled, not only reduce defectives such as depression and corrosion, and improve chemical mechanical milling tech stability, improve the product yield.
Description of drawings
Figure 1 shows that the structural representation of chemical mechanical polishing device of the present invention;
Fig. 2 (a) is depicted as the defect map after chemical mechanical polishing device of the present invention carries out the tungsten grinding;
Fig. 2 (b) is depicted as the defect map after existing chemical mechanical polishing device carries out the tungsten grinding.
The specific embodiment
By the technology contents, the structural feature that describe the invention in detail, reached purpose and effect, described in detail below in conjunction with embodiment and conjunction with figs..
See also Fig. 1, Figure 1 shows that the structural representation of chemical mechanical polishing device of the present invention.Described chemical mechanical polishing device 1 comprises rotating shaft 11, and described rotating shaft 11 is dynamic action lower edge axial-movement externally; Grinding table 12 is arranged on the end of described rotating shaft 11; Grinding pad 13 is arranged on a side of the described rotating shaft 11 of differing from of described grinding table 12, and is used for the described wafer 2 to be ground of carrying; Grinding head 14 has built-in hollow accommodation space 141, and is towards setting with described grinding pad 13, forms the accommodation space of accommodating described wafer to be ground 2 between described grinding head 14 and described grinding pad 13; Force application apparatus 15, described force application apparatus 15 act on the described grinding head 14, to control the stressed of described grinding head 14; Thermostat 16 has constant temperature liquid 161, and is communicated with empty accommodation space 141 among the described grinding head 14 by the first pipeline 17a and the second pipeline 17b that forms circulation; And radiator valve 18, described radiator valve 18 is electrically connected with described thermostat 16, and in order to control the temperature of described thermostat 16.
As preferred embodiment of the present invention, the grinding head 14 of chemical mechanical polishing device 1 of the present invention can further comprise the temperature sensor (not shown) that is arranged on the described grinding head 14, described temperature sensor is in order to monitoring the temperature of described grinding head 14, and can further regulate and control the temperature of described thermostat 16 by described radiator valve 18 according to the information of described temperature sensor.Wherein, nonrestrictive enumerating, the constant temperature liquid 161 of described thermostat 16 includes but not limited to the aqueous solution.The temperature range of described thermostat 16 is 20～100 ℃.The described first pipeline 17a is water inlet pipe, and the described second pipeline 17b is outlet pipe.
Please continue and consult Fig. 2 (a), Fig. 2 (b), and in conjunction with consulting Fig. 1, Fig. 2 (a) is depicted as the defect map after chemical mechanical polishing device of the present invention carries out the tungsten grinding.Fig. 2 (b) is depicted as the defect map after existing chemical mechanical polishing device carries out the tungsten grinding.In order further to set forth the present invention's chemical mechanical polishing device, now in conjunction with Fig. 1 in detail its operation principle is described in detail.When using chemical mechanical polishing device 1 of the present invention, described wafer 2 to be ground is placed in described grinding pad 13 and the described grinding head 14 formed accommodation spaces, the back of described wafer to be ground 2 is adjacent with described grinding head 14, to be ground of described wafer to be ground 2 is adjacent with described grinding pad 13, and by force application apparatus 15 control it acts on stressed on the described grinding head 14, in chemical mechanical planarization process, the temperature of the described grinding head 14 of loop control of the constant temperature liquid 161 by thermostat 16, and then realize the temperature of described wafer 2 to be ground is controlled, and accurately control described cmp speed.
As those skilled in the art, understand ground easily, can or be arranged on temperature sensor signal on the described grinding head 14 according to the actual temperature of wafer 2 cmps to be ground, by regulating described radiator valve 18, to realize constant temperature liquid 161 temperature controlling to described thermostat 16, and then the circulation by described constant temperature liquid 161 realizes the different temperatures regulation and control to described grinding head 14 and described wafer to be ground 2, accurately controls described cmp speed.By Fig. 2 (a), Fig. 2 (b) as can be known, the tungsten that is undertaken by chemical mechanical polishing device 1 of the present invention grinds and has reduced depression and corrosion default.
In sum, chemical mechanical polishing device of the present invention is by the circulation of the constant temperature liquid of thermostat, realization is to the temperature control of described grinding head and wafer to be ground, and by described radiator valve the temperature of described thermostat is regulated, with realization the speed of described cmp is accurately controlled, not only reduce defectives such as depression and corrosion, and improve chemical mechanical milling tech stability, improve the product yield.
Those skilled in the art all should be appreciated that, under the situation that does not break away from the spirit or scope of the present invention, can carry out various modifications and variations to the present invention.Thereby, if when any modification or modification fall in the protection domain of appended claims and equivalent, think that the present invention contains these modifications and modification.
Claims (5)
1. a chemical mechanical polishing device is characterized in that, described chemical mechanical polishing device comprises:
Rotating shaft, described rotating shaft is dynamic action lower edge axial-movement externally;
Grinding table is arranged on the end of described rotating shaft;
Grinding pad is arranged on a side that differs from described rotating shaft of described grinding table, and is used for the described wafer to be ground of carrying;
Grinding head has built-in hollow accommodation space, and is towards setting with described grinding pad, forms the accommodation space of accommodating described wafer to be ground between described grinding head and described grinding pad;
Force application apparatus, described force application apparatus act on the described grinding head, to control the stressed of described grinding head;
Thermostat has constant temperature liquid, and is communicated with empty accommodation space among the described grinding head by first pipeline and second pipeline that forms circulation; And,
Radiator valve, described radiator valve is electrically connected with described thermostat, and in order to control the temperature of described thermostat.
2. chemical mechanical polishing device as claimed in claim 1 is characterized in that, the grinding head of described chemical mechanical polishing device further comprises the temperature sensor that is arranged on the described grinding head.
3. chemical mechanical polishing device as claimed in claim 1 is characterized in that, the constant temperature liquid of described thermostat is the aqueous solution.
4. chemical mechanical polishing device as claimed in claim 3 is characterized in that, described first pipeline is water inlet pipe, and described second pipeline is outlet pipe.
5. chemical mechanical polishing device as claimed in claim 3 is characterized in that, the temperature range of described thermostat is 20～100 ℃.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013101216136A CN103273413A (en) | 2013-04-09 | 2013-04-09 | Chemical-mechanical polishing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013101216136A CN103273413A (en) | 2013-04-09 | 2013-04-09 | Chemical-mechanical polishing device |
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| Publication Number | Publication Date |
|---|---|
| CN103273413A true CN103273413A (en) | 2013-09-04 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2013101216136A Pending CN103273413A (en) | 2013-04-09 | 2013-04-09 | Chemical-mechanical polishing device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103753380A (en) * | 2013-12-18 | 2014-04-30 | 河南科技学院 | Chemical mechanical polishing interface temperature detection and control system based on wireless transmission |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56157949A (en) * | 1980-05-02 | 1981-12-05 | Supiide Fuamu Kk | Grinder |
| CN1165727A (en) * | 1996-02-28 | 1997-11-26 | 冲电气工业株式会社 | method of and apparatus for polishing wafer |
| CN202264138U (en) * | 2011-10-09 | 2012-06-06 | 沈阳理工大学 | Cold plate cooling and high-speed grinding device for sintered polycrystalline diamond |
| CN102501166A (en) * | 2011-11-03 | 2012-06-20 | 无锡欧亚精密冲压件有限公司 | Grinding tool for mechanical machining |
| CN202462200U (en) * | 2012-03-05 | 2012-10-03 | 中芯国际集成电路制造(上海)有限公司 | Grinding temperature control system and grinding device |
-
2013
- 2013-04-09 CN CN2013101216136A patent/CN103273413A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56157949A (en) * | 1980-05-02 | 1981-12-05 | Supiide Fuamu Kk | Grinder |
| CN1165727A (en) * | 1996-02-28 | 1997-11-26 | 冲电气工业株式会社 | method of and apparatus for polishing wafer |
| CN202264138U (en) * | 2011-10-09 | 2012-06-06 | 沈阳理工大学 | Cold plate cooling and high-speed grinding device for sintered polycrystalline diamond |
| CN102501166A (en) * | 2011-11-03 | 2012-06-20 | 无锡欧亚精密冲压件有限公司 | Grinding tool for mechanical machining |
| CN202462200U (en) * | 2012-03-05 | 2012-10-03 | 中芯国际集成电路制造(上海)有限公司 | Grinding temperature control system and grinding device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103753380A (en) * | 2013-12-18 | 2014-04-30 | 河南科技学院 | Chemical mechanical polishing interface temperature detection and control system based on wireless transmission |
| CN103753380B (en) * | 2013-12-18 | 2016-04-20 | 河南科技学院 | Based on the chemically mechanical polishing interface temperature detecting and controlling system of wireless transmission |
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Application publication date: 20130904 |