CN103256989A - Structure for improving heat conduction stability of closed membrane type thermopile detector - Google Patents
Structure for improving heat conduction stability of closed membrane type thermopile detector Download PDFInfo
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- CN103256989A CN103256989A CN201310166218XA CN201310166218A CN103256989A CN 103256989 A CN103256989 A CN 103256989A CN 201310166218X A CN201310166218X A CN 201310166218XA CN 201310166218 A CN201310166218 A CN 201310166218A CN 103256989 A CN103256989 A CN 103256989A
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Abstract
The invention provides a structure for improving heat conduction stability of a closed membrane type thermopile detector. The structure comprises a thermopile functional area, a metal ring of a three-dimensional structure is arranged on the periphery of the thermopile functional area in a surrounding mode, and the metal ring is composed of a metal inner ring and a metal outer ring, and the metal inner ring and the metal outer ring are provided with vertical structures. The metal inner ring and the metal outer ring respectively comprise at least one through hole layer and at least one metal layer, and the through hole layers and the metal layers are alternately arranged from bottom to top. Metal materials are filled in the through hole layers and connected with vertically-adjacent metal layers. A circuit line arrangement area is arranged between the metal inner ring and the metal outer ring. At least one metal layer extends between the metal inner ring and the metal outer ring and penetrates through the circuit line arrangement area to be connected with the metal inner ring and the metal outer ring, and therefore the metal inner ring and the metal outer ring can achieve heat conduction. According to the structure for improving the heat conduction stability of the closed membrane type thermopile detector, through the 'heat short circuit' effect formed by the metal rings, stable heat conduction performance of the thermopile functional area can be achieved.
Description
Technical field
The present invention relates to a kind of structure of thermopile detector, especially a kind of structure that improves sealing membrane type thermopile detector conduction process stability.
Background technology
Infrared eye is one of element of most critical in the infrared system.Thermopile IR detector is a kind of non-refrigeration type infrared eye that early develops.Its principle of work is based on Seebeck effect, and namely two kinds of different electric conductors or semiconductor material temperature contrast cause producing voltage difference between two kinds of materials.Because it is little that thermopile IR detector has a volume, can work under the room temperature, the response of wide range infrared radiation can detect constant radiant quantity, and advantage such as preparation cost is low, is widely used at aspects such as security monitoring, therapeutic treatment, life detections.
Early stage thermoelectric pile infrared temperature detector is deposited on the thermocouple material on plastics or the alumina substrate and obtains, and the device size that this method obtains is big, is difficult for producing in batches.Along with the MEMS The Application of Technology, micro mechanical thermopile infrared temperature detector has appearred.Adopt the micro mechanical thermopile infrared temperature detector of MEMS technology making and conduct, improve integrated level owing to can effectively reduce its heat, performance has lifting by a relatively large margin than traditional hot pile device.Along with the development of MEMS technology, various MEMS infrared temperature detectors begin to show up prominently.But its process adopts corrosion technology dorsad more, needs the double-sided alignment photoetching, equipment is required high, method complicated and with the standard CMOS process poor compatibility.For addressing this problem, domestic and international many research institutions take into full account the processing compatibility with CMOS, propose solution, a lot of bibliographical informations the thermopile detector of realizing based on CMOS technology.
Existing thermoelectric pile structure based on MEMS technology or CMOS technology adopts the closing membrane structure more, to play good effect of heat insulation.For sealing membrane type thermopile detector, keep the constitutionally stable heat conductivility of thermoelectric pile extremely important.So far, the domestic correlative study that does not also have this technology.Because some scrambling of device architecture (as the cavity of below, thermoelectric pile functional areas) or external environment condition change meeting feasible sealing membrane type thermoelectric pile structure unstable properties in heat transfer process, thereby influence the detection accuracy of device.
Summary of the invention
The objective of the invention is to overcome the deficiencies in the prior art, a kind of structure that improves sealing membrane type thermopile detector heat conduction stability is proposed, utilize the multiple layer metal material in the micromechanics manufacturing process to form a kind of new structure dexterously, can make the thermoelectric pile functional areas of infrared thermopile detector have the steady heat conduction performance, thereby improve the detection accuracy of thermopile detector.The technical solution used in the present invention is:
A kind of structure that improves sealing membrane type thermopile detector heat conduction stability, comprise thermoelectric pile functional areas, be provided with the becket of D structure around the thermoelectric pile functional areas around the thermoelectric pile functional areas, described becket is made of ring and metal outer shroud in the metal with vertical configuration; Ring and metal outer shroud have metal level to be communicated with in the metal.
Further, ring and metal outer shroud all comprise the via layer of one deck at least that is arranged alternately and one deck metal level at least from bottom to top in the described metal; Fill metal material in the via layer, connect neighbouring metal level; Leave the circuit trace district between ring and the metal outer shroud in the metal;
Have at least the layer of metal layer in metal, to encircle and the metal outer shroud between extend, penetrate the circuit trace district, connect ring and metal outer shroud in the metal; So that the interior ring of metal and metal outer shroud thermal conductance are logical.
More specifically,
Ring lower floor via layer, lower metal layer, the interior ring first intermediate throughholes layer, interior ring first intermediate metal layer, the interior ring second intermediate throughholes layer, interior ring second intermediate metal layer, interior ring the 3rd intermediate throughholes layer, upper metal layers in ring has been arranged alternately from bottom to top in the described metal;
Corresponding to each via layer and the metal level that replace from bottom to top that encircle in the metal, correspondingly, described metal outer shroud has been arranged alternately outer shroud lower floor via layer, lower metal layer, the outer shroud first intermediate throughholes layer, outer shroud first intermediate metal layer, the outer shroud second intermediate throughholes layer, outer shroud second intermediate metal layer, outer shroud the 3rd intermediate throughholes layer, upper metal layers from bottom to top;
Lower metal layer and upper metal layers in metal, encircle and the metal outer shroud between extend, penetrate the circuit trace district, connect ring and metal outer shroud in the metal.
Further, ring and the setting parallel to each other of metal outer shroud in the metal.
Further, each corresponding metal level, the via layer contour distribution in vertical direction of each layer metal level of ring in the metal, via layer and metal outer shroud;
Further, the metal material of filling in each via layer of ring and metal outer shroud in the metal is tungsten.
Further, the material of each metal level of ring and metal outer shroud is copper or aluminium in the metal.
Advantage of the present invention: this structure can make the interior medium of becket and thermopile detector fully contact, and is conducive to the heat conduction, forms " hot short circuit " effect." hot short circuit " effect that forms by becket can make the thermoelectric pile functional areas realize stable heat conductivility, and stable heat conductivility can improve the detector detection accuracy.
Description of drawings
Fig. 1 is infrared thermopile detector floor map of the present invention.
Fig. 2 is the lower metal layer partial top view of becket.Fig. 3 is the cut-open view of Fig. 2.
Fig. 4 is the first intermediate throughholes layer partial top view of inner and outer ring.Fig. 5 is the cut-open view of Fig. 4.
Fig. 6 is the first intermediate metal layer partial top view of inner and outer ring.Fig. 7 is the cut-open view of Fig. 6.
Fig. 8 is the second intermediate throughholes layer partial top view of inner and outer ring.Fig. 9 is the cut-open view of Fig. 8.
Figure 10 is the second intermediate metal layer partial top view of inner and outer ring.Figure 11 is the cut-open view of Figure 10.
Figure 12 is the 3rd intermediate throughholes layer partial top view of inner and outer ring.Figure 13 is the cut-open view of Figure 12.
Figure 14 is the upper metal layers partial top view of becket.Figure 15 is the cut-open view of Figure 14.
Figure 16 is protective seam or passivation layer partial top view.
Figure 17 is the cut-open view of becket structure.
Embodiment
The invention will be further described below in conjunction with concrete drawings and Examples.
Fig. 1 is the infrared thermopile detector floor map that the present invention relates to.Thermopile detector comprises thermoelectric pile functional areas 101, has thermoelectric pile structure 104 in the thermoelectric pile functional areas 101, the hot junction 105 of thermoelectric pile structure 104 is positioned at the middle position of thermoelectric pile functional areas 101, and the cold junction 106 of thermoelectric pile structure 104 is positioned at the peripheral position of thermoelectric pile functional areas 101.The principle of work of thermoelectric pile functional areas 101 namely by poor in 105 formation temperatures of cold junction 106 and hot junction of thermoelectric pile structure 104, produces electrical parameter outputs such as thermocurrent or thermal voltage based on Seebeck effect.Be coated with protective seam on the thermoelectric pile functional areas 101 or passivation layer 210(sees shown in Figure 17), the material of protective seam or passivation layer 210 is generally silicon nitride.Etched hole 102 penetrates protective seam on the thermoelectric pile functional areas 101 or passivation layer 210 and extends to silicon base 200(and see Fig. 2 or Figure 17); can make the release that is etched of the silicon base zone of 101 belows, thermoelectric pile functional areas by etched hole 102, see Figure 17 thereby below thermoelectric pile functional areas 101, form cavity 226().
Do further to improve on the basis of above-mentioned infrared thermopile detector, obtain following structure.
As Fig. 1 and shown in Figure 17, around thermoelectric pile functional areas 101, be provided with the becket 103 of D structure around thermoelectric pile functional areas 101, described becket 103 is made of ring 103-2 and metal outer shroud 103-1 in the metal with vertical configuration; Ring 103-2 and metal outer shroud 103-1 have metal level to be communicated with in the metal.
Be a specific embodiment below, to shown in Figure 17, Figure 17 is the cut-open view corresponding to dashed region among Fig. 1 111 as Fig. 2.Formed becket 103 comprises multiple layer metal layer and multilayer via layer.Becket 103 is positioned on the silicon base 200, is made up of the metal heat-conducting material.Becket 103 comprises ring 103-2 and metal outer shroud 103-1 in the metal that is arranged in parallel.Ring 103-2 and metal outer shroud 103-1 all comprise the via layer of one deck at least that is arranged alternately and one deck metal level at least from bottom to top in the described metal; Fill metal material in the via layer, connect neighbouring metal level; Leave circuit trace district 300 between ring 103-2 and the metal outer shroud 103-1 in the metal.
Specifically, the ring via layer 104-2 of lower floor, lower metal layer 204, the interior ring first intermediate throughholes layer 105-2, the interior ring first intermediate metal layer 203-2, the interior ring second intermediate throughholes layer 106-2, the interior ring second intermediate metal layer 202-2, interior ring the 3rd intermediate throughholes layer 107-2, upper metal layers 201 in ring 103-2 has been arranged alternately from bottom to top in the described metal;
Each via layer and the metal level that replace from bottom to top corresponding to ring 103-2 in the metal, correspondingly, described metal outer shroud 103-1 has been arranged alternately the via layer 104-1 of outer shroud lower floor, lower metal layer 204, the outer shroud first intermediate throughholes layer 105-1, the outer shroud first intermediate metal layer 203-1, the outer shroud second intermediate throughholes layer 106-1, the outer shroud second intermediate metal layer 202-1, outer shroud the 3rd intermediate throughholes layer 107-1, upper metal layers 201 from bottom to top;
Each corresponding metal level, the via layer contour distribution in vertical direction of each layer metal level of ring 103-2 in the metal, via layer and metal outer shroud 103-1; The metal material of filling in each via layer of ring 103-2 and metal outer shroud 103-1 in the metal is tungsten.The material of each metal level of ring 103-2 and metal outer shroud 103-1 is copper or aluminium in the metal.Arrange and interconnected metal inner and outer ring by parallel, and the vertical configuration of metal inner and outer ring, the interior medium of becket 103 and thermopile detector is fully contacted, be conducive to the heat conduction, form " hot short circuit " effect.When each position temperature is inconsistent around the thermoelectric pile functional areas 101, promptly carry out the heat conduction." hot short circuit " effect that forms by becket 103 can make thermoelectric pile functional areas 101 realize stable heat conductivility, and stable heat conductivility can improve the detector detection accuracy.
The above is preferred embodiment of the present invention, and in order to limit the present invention, and is within the spirit and principles in the present invention all, any modification of doing, is equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (7)
1. a structure that improves sealing membrane type thermopile detector heat conduction stability comprises thermoelectric pile functional areas (101), it is characterized in that:
Be provided with the becket (103) of D structure around thermoelectric pile functional areas (101) around thermoelectric pile functional areas (101), described becket (103) is made of ring (103-2) and metal outer shroud (103-1) in the metal with vertical configuration; Ring (103-2) and metal outer shroud (103-1) have metal level to be communicated with in the metal.
2. the structure of raising as claimed in claim 1 sealing membrane type thermopile detector heat conduction stability is characterized in that: ring (103-2) and metal outer shroud (103-1) all comprise the via layer of one deck at least that is arranged alternately and one deck metal level at least from bottom to top in the described metal; Fill metal material in the via layer, connect neighbouring metal level; Leave circuit trace district (300) between ring (103-2) and the metal outer shroud (103-1) in the metal;
Have at least the layer of metal layer in metal, to encircle between (103-2) and the metal outer shroud (103-1) and extend, penetrate circuit trace district (300), connect ring (103-2) and metal outer shroud (103-1) in the metal; So that the interior ring of metal (103-2) and metal outer shroud (103-1) thermal conductance are logical.
3. the structure of membrane type thermopile detector heat conduction stability is sealed in raising as claimed in claim 2, it is characterized in that:
Ring lower floor's via layer (104-2), lower metal layer (204), the interior ring first intermediate throughholes layer (105-2), interior ring first intermediate metal layer (203-2), the interior ring second intermediate throughholes layer (106-2), interior ring second intermediate metal layer (202-2), interior ring the 3rd intermediate throughholes layer (107-2), upper metal layers (201) in ring (103-2) has been arranged alternately from bottom to top in the described metal;
Each via layer and the metal level that replace from bottom to top corresponding to ring (103-2) in the metal, correspondingly, described metal outer shroud (103-1) has been arranged alternately outer shroud lower floor via layer (104-1), lower metal layer (204), the outer shroud first intermediate throughholes layer (105-1), outer shroud first intermediate metal layer (203-1), the outer shroud second intermediate throughholes layer (106-1), outer shroud second intermediate metal layer (202-1), outer shroud the 3rd intermediate throughholes layer (107-1), upper metal layers (201) from bottom to top;
Lower metal layer (204) and upper metal layers (201) are encircled in metal between (103-2) and the metal outer shroud (103-1) and are extended, and penetrate circuit trace district (300), connect ring (103-2) and metal outer shroud (103-1) in the metal.
4. the structure of raising sealing membrane type thermopile detector heat conduction stability as claimed in claim 3 is characterized in that: ring (103-2) and metal outer shroud (103-1) setting parallel to each other in the described metal.
5. the structure of raising as claimed in claim 3 sealing membrane type thermopile detector heat conduction stability is characterized in that: each corresponding metal level, the via layer contour distribution in vertical direction of each layer metal level of ring (103-2) in the metal, via layer and metal outer shroud (103-1).
6. the structure of membrane type thermopile detector heat conduction stability is sealed in raising as claimed in claim 3, and it is characterized in that: the metal material of filling in each via layer of ring (103-2) and metal outer shroud (103-1) in the metal is tungsten.
7. the structure of membrane type thermopile detector heat conduction stability is sealed in raising as claimed in claim 3, and it is characterized in that: the material of each metal level of ring (103-2) and metal outer shroud (103-1) is copper or aluminium in the metal.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201310166218.XA CN103256989B (en) | 2013-05-07 | 2013-05-07 | Improve the structure closing membrane type thermopile detector conduction stability |
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| CN201310166218.XA CN103256989B (en) | 2013-05-07 | 2013-05-07 | Improve the structure closing membrane type thermopile detector conduction stability |
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| CN103256989A true CN103256989A (en) | 2013-08-21 |
| CN103256989B CN103256989B (en) | 2016-01-06 |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB692116A (en) * | 1950-01-18 | 1953-05-27 | Leeds & Northrup Co | Improvements in compensated thermopiles |
| WO2001088495A1 (en) * | 2000-04-20 | 2001-11-22 | Kazuhito Sakano | Infrared thermometer and method of measuring temperature with infrared thermometer |
| CN1529137A (en) * | 2003-09-29 | 2004-09-15 | 中国科学院上海微系统与信息技术研究 | Micromechanical thermopile infrared detector and manufacturing method thereof |
| WO2006031962A1 (en) * | 2004-09-13 | 2006-03-23 | Authentec, Inc. | Integrated circuit infrared sensor and associated methods |
-
2013
- 2013-05-07 CN CN201310166218.XA patent/CN103256989B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB692116A (en) * | 1950-01-18 | 1953-05-27 | Leeds & Northrup Co | Improvements in compensated thermopiles |
| WO2001088495A1 (en) * | 2000-04-20 | 2001-11-22 | Kazuhito Sakano | Infrared thermometer and method of measuring temperature with infrared thermometer |
| CN1529137A (en) * | 2003-09-29 | 2004-09-15 | 中国科学院上海微系统与信息技术研究 | Micromechanical thermopile infrared detector and manufacturing method thereof |
| WO2006031962A1 (en) * | 2004-09-13 | 2006-03-23 | Authentec, Inc. | Integrated circuit infrared sensor and associated methods |
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Effective date of registration: 20190726 Address after: 100029 Beijing city Chaoyang District Beitucheng West Road No. 3, building 15, room 328 Patentee after: Beijing Zhongke micro Investment Management Co., Ltd. Address before: 214135 Jiangsu New District of Wuxi City Linghu Road No. 200 China Sensor Network International Innovation Park building C Patentee before: Jiangsu Internet of Things Research & Develoment Co., Ltd. |
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Effective date of registration: 20210111 Address after: 610200 in the concentration area of Chengdu Xingu Industrial Park, Dongsheng Street, Shuangliu District, Chengdu City, Sichuan Province Patentee after: China core Microelectronics Technology Chengdu Co.,Ltd. Address before: 100029 room 328, building 15, 3 Beitucheng West Road, Chaoyang District, Beijing Patentee before: Beijing Zhongke micro Investment Management Co.,Ltd. |