CN103248221B - Step-down controller - Google Patents

Step-down controller Download PDF

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CN103248221B
CN103248221B CN201210027568.3A CN201210027568A CN103248221B CN 103248221 B CN103248221 B CN 103248221B CN 201210027568 A CN201210027568 A CN 201210027568A CN 103248221 B CN103248221 B CN 103248221B
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CN103248221A (en
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姚爱萍
张金勇
王磊
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Shenzhen Institute of Advanced Technology of CAS
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Shenzhen Institute of Advanced Technology of CAS
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Abstract

一种降压转换器,包括变换电路、过零比较器、电流比较器、电压比较器及PFM控制电路,所述变换电路包括输入端与电源连接的开关管Q1、输出端与所述开关管Q1输出端连接且输入端接地的开关管Q2、一端与所述开关管Q1输出端连接的电感L、一端与所述电感L连接另一端接地的电容C及并联在所述电容C两端的电阻R1;所述电压比较器、过零比较器、电流比较器将比较结果输入所述PFM控制电路控制;PFM控制电路根据所述电压比较器、电流比较器以及过零比较器的比较结果输出控制开关管Q1和开关管Q2通断的控制信号。上述降压转换器通过采用内部产生的数字信号作为控制信号,PFM控制电路中采用动态部分关断策略,有效的减少系统损耗。

A step-down converter, comprising a conversion circuit, a zero-crossing comparator, a current comparator, a voltage comparator and a PFM control circuit, the conversion circuit includes a switch tube Q1 connected to an input terminal and a power supply, an output terminal and the switch tube The switch tube Q2 connected to the output terminal of Q1 and grounded at the input terminal, an inductor L connected to the output terminal of the switch tube Q1 at one end, a capacitor C connected to the inductor L at one end and grounded at the other end, and a resistor connected in parallel to both ends of the capacitor C R1; the voltage comparator, zero-crossing comparator, and current comparator input the comparison results into the PFM control circuit for control; the PFM control circuit outputs control according to the comparison results of the voltage comparator, current comparator, and zero-crossing comparator A control signal for on-off of the switch tube Q1 and the switch tube Q2. The above step-down converter adopts an internally generated digital signal as a control signal, and a dynamic partial shutdown strategy is adopted in the PFM control circuit, so as to effectively reduce system loss.

Description

降压转换器buck converter

【技术领域】【Technical field】

本发明涉及电子电路领域,特别是涉及一种降压转换器。The invention relates to the field of electronic circuits, in particular to a step-down converter.

【背景技术】【Background technique】

随着集成电路工艺的日益发展,集成电路元件越来越小型化,使得集成电路的集成度越来越高,在集成电路中过高的电压会将金属氧化物半导体型场效应管(MOS管)击穿,轻则电路不工作,重则损坏整个电路,因此需要将外界提供的较高的直流电压降低到较低的直流电压供集成电路工作。合适的供电电压不仅能保护集成电路,同时能够有效的降低整个系统的功耗。With the development of integrated circuit technology, integrated circuit components are becoming more and more miniaturized, which makes the integration of integrated circuits higher and higher. Excessive voltage in integrated circuits will make metal oxide semiconductor field effect transistors (MOS transistors) ) breakdown, the circuit will not work if it is light, and the entire circuit will be damaged if it is serious. Therefore, it is necessary to reduce the higher DC voltage provided by the outside to a lower DC voltage for the integrated circuit to work. A proper power supply voltage can not only protect the integrated circuit, but also effectively reduce the power consumption of the whole system.

应用于生物医学工程的系统,一般都是电池或者锂电池供电,而且要求具有便携性、能够长时间工作等特点。这就要求,应用于生物医学工程系统的DC-DC电压转换器需要具有低功耗、高效率的特点。Systems used in biomedical engineering are generally powered by batteries or lithium batteries, and are required to be portable and able to work for a long time. This requires that DC-DC voltage converters used in biomedical engineering systems need to have the characteristics of low power consumption and high efficiency.

可用于便携式医疗设备的电源管理DC-DC包括:1、低压差线性稳压电源(Low Drop Output,LDO);2、开关电容变换电路(Switched Capacitor Converter);3、开关电源型DC-DC。Power management DC-DCs that can be used for portable medical equipment include: 1. Low Dropout Linear Power Supply (Low Drop Output, LDO); 2. Switched Capacitor Converter (Switched Capacitor Converter); 3. Switching power supply type DC-DC.

LDO具有超低的输出电压噪声,这是它的最大优势,但是LDO线性稳压电源的缺点是当输入电压与输出电压之间的电压差较大时,调整管上的损耗大、导致效率很低。LDO has ultra-low output voltage noise, which is its biggest advantage, but the disadvantage of LDO linear regulated power supply is that when the voltage difference between the input voltage and output voltage is large, the loss on the adjustment tube is large, resulting in low efficiency. Low.

开关电容式的DC-DC转换器负载能力差,在比较大负载的情况也不适用。此外,由于现代微电子工艺中,集成在芯片内的电阻一般不超过500KΩ,电容不超过50pF,这是因为如果集成电阻或者集成电容超过这些值,它们的非线性将极大地损坏电路的性能,得不偿失。鉴于开关电容所特有的特点:电容大,这一特点使得开关电容的应用有了一定的局限性。Switched capacitor DC-DC converters have poor load capacity and are not suitable for relatively large loads. In addition, in modern microelectronics technology, the resistance integrated in the chip generally does not exceed 500KΩ, and the capacitance does not exceed 50pF. This is because if the integrated resistance or integrated capacitance exceeds these values, their nonlinearity will greatly damage the performance of the circuit. The loss outweighs the gain. In view of the unique characteristics of switched capacitors: large capacitance, this feature limits the application of switched capacitors.

传统的开关电源型DC-DC转换器包括脉冲宽度调制(Pulse-WidthModulation,PWM)控制方式,或者脉冲宽度调制与脉冲频率调制(Pulse-Frequency Modulation,PFM)混合调制(PWM/PFM)方式。Traditional switching power supply DC-DC converters include pulse-width modulation (Pulse-Width Modulation, PWM) control mode, or pulse-width modulation and pulse-frequency modulation (Pulse-Frequency Modulation, PFM) hybrid modulation (PWM/PFM) mode.

在PWM控制方式中,由于开关功率管和整流管一直处于开关转换状态,并且频率一般都较高,达到几MHz,从而产生很大的开关损耗,造成极大的系统功耗损失,在轻载情况下,效率迅速下降。不利于生物医学工程领域的电源管理要求。而PFM控制方法所需要的结构比较复杂,需要额外的负延时、单稳态触发信号(one-shot)发生模块等,更多的模块容易导致系统不稳定,容易发生震荡,并产生额外的功耗损耗。In the PWM control mode, because the switching power tube and the rectifier tube are always in the switching state, and the frequency is generally high, reaching several MHz, resulting in a large switching loss, resulting in a huge loss of system power consumption. In this case, the efficiency drops rapidly. Not conducive to the power management requirements of the biomedical engineering field. However, the structure required by the PFM control method is more complicated, and additional modules such as negative delay and one-shot signal generation are required. More modules are likely to cause system instability, oscillation, and additional power loss.

【发明内容】【Content of invention】

基于此,针对传统的降压转换方式效率低,并产生额外的功耗损耗的问题,有必要提供一种低功耗高效率的降压转换器。Based on this, it is necessary to provide a low-power and high-efficiency step-down converter to solve the problem of low efficiency and extra power loss in the traditional step-down conversion method.

一种降压转换器,包括变换电路、过零比较器、电流比较器、电压比较器及PFM控制电路A step-down converter, including a conversion circuit, a zero-crossing comparator, a current comparator, a voltage comparator and a PFM control circuit

所述变换电路包括输入端与电源连接的开关管Q1、输出端与所述开关管Q1输出端连接输入端接地的开关管Q2、一端与所述开关管Q1输出端连接的电感L、一端与所述电感L连接另一端接地的电容C及并联在所述电容C两端的电阻R1;The conversion circuit includes a switching tube Q1 whose input end is connected to the power supply, a switching tube Q2 whose output end is connected to the output end of the switching tube Q1 and whose input end is grounded, an inductor L whose one end is connected to the output end of the switching tube Q1, and an inductor L whose one end is connected to the output end of the switching tube Q1. The inductance L is connected to a capacitor C whose other end is grounded and a resistor R1 connected in parallel to both ends of the capacitor C;

所述电压比较器的反相输入端连接在所述电感L与所述电容C间的节点、正相输入端输入基准电压,并将比较结果输入所述PFM控制电路;The inverting input terminal of the voltage comparator is connected to the node between the inductor L and the capacitor C, the non-inverting input terminal inputs a reference voltage, and the comparison result is input into the PFM control circuit;

所述电流比较器的正相输入端与所述开关管Q1的输入端连接、反相输入端输入所述电感L的电流峰值,并将比较结果输入所述PFM控制电路;The non-inverting input terminal of the current comparator is connected to the input terminal of the switching tube Q1, the inverting input terminal inputs the current peak value of the inductor L, and the comparison result is input into the PFM control circuit;

所述过零比较器的正相输入端与所述开关管Q1输出端连接、反相输入端接地,并将比较结果输入所述PFM控制电路;The non-inverting input terminal of the zero-crossing comparator is connected to the output terminal of the switching tube Q1, the inverting input terminal is grounded, and the comparison result is input into the PFM control circuit;

所述PFM控制电路根据所述电压比较器、电流比较器以及过零比较器的比较结果输出控制开关管Q1和开关管Q2通断的控制信号。The PFM control circuit outputs a control signal for controlling the switching of the switching tube Q1 and the switching tube Q2 according to the comparison results of the voltage comparator, the current comparator and the zero-crossing comparator.

优选地,所述电流比较器包括正相电流镜模块、反相电流镜模块,其中,Preferably, the current comparator includes a positive-phase current mirror module and a reverse-phase current mirror module, wherein,

所述电流比较器正相输入端输入的电流Iin+经所述正相电流镜模块镜像与所述电流比较器反相输入端输入的电流Iin-经所述反相电流镜模块镜像到同一节点a;The current I in input by the positive-phase input terminal of the current comparator is mirrored by the positive-phase current mirror module and the current I in input by the negative-phase input terminal of the current comparator is mirrored by the negative-phase current mirror module to the same node a;

若Iin+大于Iin-,则所述节点a的电压被拉高在所述电流比较器输出端输出高电平;If I in + is greater than I in -, the voltage of the node a is pulled up and the output terminal of the current comparator outputs a high level;

若Iin+小于Iin-,则所述节点a的电压被拉低在所述电流比较器输出端输出低电平。If I in + is smaller than I in −, the voltage of the node a is pulled down and the output terminal of the current comparator outputs a low level.

优选地,所述正相电流镜像模块包括第一电流镜、第二电流镜,其中,Preferably, the positive-phase current mirror module includes a first current mirror and a second current mirror, wherein,

第一电流镜包括N沟道MOS管NMOS1、MOS管NMOS2、MOS管NMOS3、MOS管NMOS4及电阻R2,其中,The first current mirror includes N-channel MOS transistors NMOS1, MOS transistors NMOS2, MOS transistors NMOS3, MOS transistors NMOS4 and resistor R2, wherein,

所述MOS管NMOS1漏极经所述电阻R2接入电流Iin+、栅极与所述MOS管NMOS2栅极连接后接入电流Iin+、源极与所述MOS管NMOS3漏极连接,所述MOS管NMOS3的栅极与所述MOS管NMOS4栅极连接后与所述MOS管NMOS1漏极连接、源极与所述MOS管NMOS4源极接地,所述MOS管NMOS4漏极与所述MOS管NMOS2源极连接,所述MOS管NMOS2漏极与所述第二电流镜连接;The drain of the MOS transistor NMOS1 is connected to the current I in + through the resistor R2, the gate is connected to the gate of the MOS transistor NMOS2, and then the current I in + is connected, and the source is connected to the drain of the MOS transistor NMOS3, The gate of the MOS transistor NMOS3 is connected to the gate of the MOS transistor NMOS4 and then connected to the drain of the MOS transistor NMOS1, the source is grounded to the source of the MOS transistor NMOS4, and the drain of the MOS transistor NMOS4 is connected to the drain of the MOS transistor NMOS1. The source of the MOS transistor NMOS2 is connected, and the drain of the MOS transistor NMOS2 is connected to the second current mirror;

第二电流镜包括P沟道MOS管PMOS1、MOS管PMOS2、MOS管PMOS3、MOS管PMOS4及电阻R3,其中,The second current mirror includes a P-channel MOS transistor PMOS1, a MOS transistor PMOS2, a MOS transistor PMOS3, a MOS transistor PMOS4, and a resistor R3, wherein,

所述MOS管PMOS1源极经所述电阻R3接所述MOS管NMOS2漏极、栅极与所述MOS管PMOS2栅极连接后接入所述MOS管NMOS2漏极、漏极与所述MOS管PMOS3源极连接,所述MOS管PMOS3的栅极与所述MOS管PMOS4栅极连接后与所述MOS管PMOS1源极连接、漏极与所述MOS管PMOS4漏极连接,所述MOS管PMOS4源极与所述MOS管PMOS2漏极连接,所述MOS管PMOS2源极输出正相镜像电流。The source of the MOS transistor PMOS1 is connected to the drain of the MOS transistor NMOS2 through the resistor R3, and the gate is connected to the gate of the MOS transistor PMOS2, and then connected to the drain of the MOS transistor NMOS2, and the drain is connected to the MOS transistor The source of PMOS3 is connected, the gate of the MOS transistor PMOS3 is connected to the gate of the MOS transistor PMOS4 and then connected to the source of the MOS transistor PMOS1, and the drain is connected to the drain of the MOS transistor PMOS4, and the gate of the MOS transistor PMOS4 The source is connected to the drain of the MOS transistor PMOS2, and the source of the MOS transistor PMOS2 outputs a positive-phase mirror current.

优选地,所述反相电流镜模块包括N沟道MOS管NMOS5、MOS管NMOS6、MOS管NMOS7、MOS管NMOS8及电阻R4,其中,Preferably, the inverting current mirror module includes N-channel MOS transistors NMOS5, MOS transistors NMOS6, MOS transistors NMOS7, MOS transistors NMOS8 and resistor R4, wherein,

所述MOS管NMOS5漏极经所述电阻R4接入电流Iin-、栅极与所述MOS管NMOS6栅极连接后接入电流Iin-、源极与所述MOS管NMOS7漏极连接,所述MOS管NMOS7栅极与所述MOS管NMOS8栅极连接后与所述MOS管NMOS5漏极连接、源极与所述MOS管NMOS8源极接地,所述MOS管NMOS8漏极与所述MOS管NMOS6源极连接,所述MOS管NMOS6漏极输出反相镜像电流与所述MOS管PMOS2源极连接输出正相镜像电流相遇。The drain of the MOS transistor NMOS5 is connected to the current I in − through the resistor R4, the gate is connected to the gate of the MOS transistor NMOS6, and the current I in − is connected to the drain, and the source is connected to the drain of the MOS transistor NMOS7, The gate of the MOS transistor NMOS7 is connected to the gate of the MOS transistor NMOS8 and then connected to the drain of the MOS transistor NMOS5, the source is grounded to the source of the MOS transistor NMOS8, and the drain of the MOS transistor NMOS8 is connected to the drain of the MOS transistor NMOS8. The source of the transistor NMOS6 is connected, and the drain of the MOS transistor NMOS6 outputs an inverse mirror current and the source of the MOS transistor PMOS2 is connected to output a positive mirror current.

优选地,所述电流比较器还包括第一反相器、第二反相器,其中,Preferably, the current comparator further includes a first inverter and a second inverter, wherein,

所述第一反相器包括P沟道MOS管PMOS5、N沟道MOS管NMOS9,所述MOS管PMOS5漏极与所述MOS管PMOS4漏极连接、源极与所述MOS管NMOS9漏极连接、栅极与所述MOS管NMOS9栅极连接后接入所述节点a;The first inverter includes a P-channel MOS transistor PMOS5 and an N-channel MOS transistor NMOS9, the drain of the MOS transistor PMOS5 is connected to the drain of the MOS transistor PMOS4, and the source is connected to the drain of the MOS transistor NMOS9 , the gate is connected to the gate of the MOS transistor NMOS9 and then connected to the node a;

所述第二反相器包括P沟道MOS管PMOS6、N沟道MOS管NMOS10,所述MOS管PMOS6漏极与所述MOS管PMOS5漏极连接、栅极与所述MOS管NMOS10栅极连接后与所述MOS管PMOS5源极连接、源极与所述MOS管NMOS10漏极连接的节点b为所述电流比较器输出端。The second inverter includes a P-channel MOS transistor PMOS6 and an N-channel MOS transistor NMOS10, the drain of the MOS transistor PMOS6 is connected to the drain of the MOS transistor PMOS5, and the gate is connected to the gate of the MOS transistor NMOS10 The node b connected to the source of the MOS transistor PMOS5 and the drain of the MOS transistor NMOS10 is the output terminal of the current comparator.

优选地,所述PFM控制模块包括与门、第一非门、第二非门、或门、或非门及RS触发器,其中,Preferably, the PFM control module includes an AND gate, a first NOT gate, a second NOT gate, an OR gate, a NOR gate and an RS flip-flop, wherein,

所述与门两输入端分别与所述电压比较器的输出端及过零比较器的输出端连接、输出端与所述RS触发器的R端连接,所述或门一输入端经所述第一非门与所述电压比较器的输出端连接,另一输入端与所述电流比较器输出端连接、输出端与所述RS触发器的S端连接,所述第一非门的输入端与电压比较器的输出端连接、输出端与或门一输入端连接;The two input ends of the AND gate are respectively connected with the output end of the voltage comparator and the output end of the zero-crossing comparator, and the output end is connected with the R end of the RS flip-flop, and one input end of the OR gate is passed through the The first NOT gate is connected to the output terminal of the voltage comparator, the other input terminal is connected to the output terminal of the current comparator, the output terminal is connected to the S terminal of the RS flip-flop, and the input of the first NOT gate The terminal is connected with the output terminal of the voltage comparator, and the output terminal is connected with an input terminal of the OR gate;

所述RS触发器的Q端输出通断控制信号经驱动单元驱动以控制所述开关管Q1通断;The Q terminal of the RS flip-flop outputs an on-off control signal driven by the drive unit to control the on-off of the switching tube Q1;

所述RS触发器的Q端经所述第二非门与所述或非门一输入端连接,所述或非门另一输入端与所述过零比较器的输出端连接、输出端输出通断控制信号经驱动单元驱动以控制所述开关管Q2通断。The Q terminal of the RS flip-flop is connected to an input terminal of the NOR gate through the second NOT gate, and the other input terminal of the NOR gate is connected to the output terminal of the zero-crossing comparator, and the output terminal outputs The on-off control signal is driven by the driving unit to control the on-off of the switching tube Q2.

优选地,还包括电流检测电路,所述电流比较器正相输入端经所述电流检测电路与所述开关管Q1的输入端连接。Preferably, a current detection circuit is further included, and the non-inverting input terminal of the current comparator is connected to the input terminal of the switch tube Q1 through the current detection circuit.

优选地,所述电流检测电路包括P沟道MOS管PMOS7、MOS管PMOS8及放大器,其中,Preferably, the current detection circuit includes a P-channel MOS transistor PMOS7, a MOS transistor PMOS8 and an amplifier, wherein,

所述开关管Q1为P沟道功率MOS管,所述开关管Q2为N沟道整流MOS管,所述MOS管PMOS7与所述功率MOS管共漏共栅连接,所述MOS管PMOS7源极与所述放大器一输入端连接,所述放大器另一输入端与所述MOS管PMOS8漏极及所述功率MOS管源极连接、输出端与所述MOS管PMOS8栅极连接,所述MOS管PMOS8源极输出检测电流。The switching tube Q1 is a P-channel power MOS tube, the switching tube Q2 is an N-channel rectifying MOS tube, the MOS tube PMOS7 is connected to the power MOS tube with common drain and common gate, and the source of the MOS tube PMOS7 is It is connected with one input end of the amplifier, the other input end of the amplifier is connected with the drain of the MOS transistor PMOS8 and the source of the power MOS transistor, the output end is connected with the gate of the MOS transistor PMOS8, and the MOS transistor PMOS8 source output sense current.

优选地,还包括带隙基准,所述电压比较器为迟滞比较器,所述带隙基准与所述迟滞比较器正相输入端连接。Preferably, a bandgap reference is further included, the voltage comparator is a hysteresis comparator, and the bandgap reference is connected to the non-inverting input end of the hysteresis comparator.

优选地,还包括分压电阻R5和分压电阻R6,所述迟滞比较器正相输入端经所述分压电阻R5连接在所述电感L与所述电容C间的节点、经所述分压电阻R6接地。Preferably, it also includes a voltage dividing resistor R5 and a voltage dividing resistor R6, the hysteresis comparator non-inverting input terminal is connected to the node between the inductor L and the capacitor C through the voltage dividing resistor R5, and through the voltage dividing resistor R5 The piezoresistor R6 is grounded.

上述降压转换器通过电流比较器检测电感L电流是否到达峰值,从而发送信号至PFM控制电路控制开关管Q1的关闭,过零比较器检测开关管Q1的漏极电压是否为负,从而检测到电感L电流是否反向,发送信号至PFM控制电路控制开关管Q2的关闭,从而阻止了能量从电容C流向地,造成无谓的功耗损失。采用内部产生的数字信号作为控制信号,从而省去了额外的负延时、单稳态触发信号等控制模块,提高了电路的稳定性,降低了电路结构复杂度和功耗。同时,PFM控制电路中采用动态部分关断策略,有效的减少系统损耗,提高了效率。The above step-down converter detects whether the current of the inductor L reaches the peak value through the current comparator, thereby sending a signal to the PFM control circuit to control the closing of the switch tube Q1, and the zero-crossing comparator detects whether the drain voltage of the switch tube Q1 is negative, thereby detecting Whether the current of the inductor L is reversed, a signal is sent to the PFM control circuit to control the closing of the switch tube Q2, thereby preventing energy from flowing from the capacitor C to the ground, resulting in unnecessary power loss. The internally generated digital signal is used as the control signal, thereby eliminating the need for additional control modules such as negative delay and monostable trigger signal, improving the stability of the circuit, and reducing the complexity of the circuit structure and power consumption. At the same time, a dynamic partial shutdown strategy is adopted in the PFM control circuit, which effectively reduces system loss and improves efficiency.

【附图说明】【Description of drawings】

图1为降压转换器的结构框图;Figure 1 is a block diagram of a buck converter;

图2为优选实施例中的降压转换器的原理图;Fig. 2 is the schematic diagram of the step-down converter in the preferred embodiment;

图3为优选实施例中的电流比较器的原理图;Fig. 3 is the schematic diagram of the current comparator in the preferred embodiment;

图4为优选实施例中的电流检测电路的原理图;Fig. 4 is the schematic diagram of the current detection circuit in the preferred embodiment;

图5为优选实施例中的电压比较器的原理图;Fig. 5 is the schematic diagram of the voltage comparator in the preferred embodiment;

图6为降压转换器连续模式下的电感电流IL和开关管Q1和开关管Q2的控制信号;Fig. 6 is the control signal of the inductor current I L and the switching tube Q1 and the switching tube Q2 under the step-down converter continuous mode;

图7为当输入为Vin=5V时,输出电压Vout和电感电流IL的仿真波形;Fig. 7 is the simulation waveform of the output voltage V out and the inductor current I L when the input is V in =5V;

图8为当输入为Vin=3.5V时,输出电压Vout和电感电流IL的仿真波形;Figure 8 is the simulation waveform of the output voltage V out and the inductor current I L when the input is V in =3.5V;

图9是输入为阶跃电压Vin=6V到Vin=3.5V时的仿真波形;Fig. 9 is the simulation waveform when the input is a step voltage V in =6V to V in =3.5V;

图10是负载电流为阶跃电流Iload=0mA到Iload=24mA时的输出波形;Fig. 10 is the output waveform when the load current is the step current Iload =0mA to Iload =24mA;

图11是负载电流从0变化到10mA时的效率曲线。Figure 11 is the efficiency curve when the load current varies from 0 to 10mA.

【具体实施方式】【Detailed ways】

为了使本发明的目的、技术方案及优点更清楚明白,以下结合附图及实施例,对本发明进一步详细说明。应当理解,此处所描述的具体实施例仅用以解释本发明,并不用于限定本发明。In order to make the purpose, technical solution and advantages of the present invention more clear, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

如图1所示,一种降压转换器,包括变换电路100、电流比较器200、过零比较器300、电压比较器400及PFM控制电路500。As shown in FIG. 1 , a buck converter includes a conversion circuit 100 , a current comparator 200 , a zero-crossing comparator 300 , a voltage comparator 400 and a PFM control circuit 500 .

变换电路100包括输入端与电源连接的开关管Q1、输出端与开关管Q1输出端连接且输入端接地的开关管Q2、一端与开关管Q1输出端连接的电感L、一端与电感L连接另一端接地的电容C及并联在电容C两端的电阻R1。在本实施例中,开关管Q1为P沟道MOS管,开关管Q2为N沟道MOS管。在其他实施例中,开关管Q1、开关管Q2可以被IGBT(Insulated Gate Bipolar Translator,绝缘栅门极晶体管)等可控型开关器件替换。变换电路100为降压斩波电路(BuckChopper),是一种对输入输出电压进行降压变换的直流斩波器,即输出电压低于输入电压,由于其具有优越的变压功能,因此可以直接用于需要直接降压的地方。The conversion circuit 100 includes a switching tube Q1 whose input end is connected to a power supply, a switching tube Q2 whose output end is connected to the output end of the switching tube Q1 and whose input end is grounded, an inductor L connected to the output end of the switching tube Q1 at one end, and an inductor L connected to the other end. A capacitor C with one end grounded and a resistor R1 connected in parallel to both ends of the capacitor C. In this embodiment, the switching transistor Q1 is a P-channel MOS transistor, and the switching transistor Q2 is an N-channel MOS transistor. In other embodiments, the switching tube Q1 and the switching tube Q2 may be replaced by controllable switching devices such as IGBT (Insulated Gate Bipolar Translator, insulated gate transistor). The conversion circuit 100 is a step-down chopper circuit (BuckChopper), which is a DC chopper that steps down the input and output voltages, that is, the output voltage is lower than the input voltage. Due to its superior voltage transformation function, it can directly Used where direct pressure reduction is required.

如图2所示,电流比较器200的正相输入端与开关管Q1的输入端连接、反相输入端输入电感L的电流峰值Ipeak,并将比较结果Vie输入PFM控制电路500。电流比较器200检测电感电流IL是否到达峰值Ipeak,从而利用PFM控制电路500控制开关管Q1的关闭。As shown in FIG. 2 , the non-inverting input terminal of the current comparator 200 is connected to the input terminal of the switch tube Q1 , the inverting input terminal inputs the current peak value I peak of the inductor L, and the comparison result V ie is input to the PFM control circuit 500 . The current comparator 200 detects whether the inductor current I L reaches the peak value I peak , so that the PFM control circuit 500 is used to control the switching off of the switch tube Q1 .

过零比较器300的正相输入端与开关管Q1输出端连接、反相输入端接地,并将比较结果Vinv输入PFM控制电路500。过零比较器300检测开关管Q1的输出电压Vsw是否为负,从而检判断电感L的电流是否反向,并关闭开关管Q2,从而阻止了能量从电容C流向地,造成无谓的功耗损失。The non-inverting input terminal of the zero-crossing comparator 300 is connected to the output terminal of the switch tube Q1 , the inverting input terminal is grounded, and the comparison result V inv is input to the PFM control circuit 500 . The zero-crossing comparator 300 detects whether the output voltage V sw of the switch tube Q1 is negative, thereby detecting whether the current of the inductor L is reversed, and turns off the switch tube Q2, thereby preventing energy from flowing from the capacitor C to the ground, resulting in unnecessary power consumption loss.

电压比较器400的反相输入端连接在电感L与电容C间的节点、正相输入端输入基准电压Vref,并将比较结果输入PFM控制电路500。在本实施例中,电压比较器400优选为迟滞比较器,带隙基准700与迟滞比较器正相输入端连接为电压比较器400提供基准电压VrefThe inverting input terminal of the voltage comparator 400 is connected to the node between the inductor L and the capacitor C, the reference voltage V ref is input to the non-inverting input terminal, and the comparison result is input into the PFM control circuit 500 . In this embodiment, the voltage comparator 400 is preferably a hysteresis comparator, and the bandgap reference 700 is connected to the non-inverting input terminal of the hysteresis comparator to provide the reference voltage V ref for the voltage comparator 400 .

PFM控制电路500根据电流比较器200、过零比较器300以及电压比较器400的比较结果输出控制开关管Q1和开关管Q2通断的控制信号。The PFM control circuit 500 outputs a control signal for controlling the switching of the switching tube Q1 and the switching tube Q2 according to the comparison results of the current comparator 200 , the zero-crossing comparator 300 and the voltage comparator 400 .

PFM控制模块500包括与门、第一非门、第二非门、或门、或非门及RS触发器M。The PFM control module 500 includes an AND gate, a first NOT gate, a second NOT gate, an OR gate, a NOR gate and an RS flip-flop M.

与门两输入端分别与电压比较器400的输出端及过零比较器300的输出端连接、输出端与RS触发器M的R端连接,或门一输入端经第一非门与电压比较器400的输出端连接另一输入端与电流比较器200输出端连接、输出端与RS触发器M的S端连接,第一非门的输入端与电压比较器400的输出端连接、输出端与或门一输入端连接。The two input terminals of the AND gate are respectively connected to the output terminal of the voltage comparator 400 and the output terminal of the zero-crossing comparator 300, and the output terminal is connected to the R terminal of the RS flip-flop M, and one input terminal of the OR gate is compared with the voltage through the first NOT gate The output terminal of the device 400 is connected to the other input terminal and the output terminal of the current comparator 200, the output terminal is connected to the S terminal of the RS flip-flop M, the input terminal of the first NOT gate is connected to the output terminal of the voltage comparator 400, and the output terminal Connect with an input of the OR gate.

RS触发器M的Q端输出通断控制信号PFM_P经驱动单元502驱动以控制开关管Q1通断。RS触发器M的Q端经第二非门与或非门一输入端连接,或非门另一输入端与过零比较器300的输出端连接、输出端输出通断控制信号PFM_N经驱动单元502驱动以控制开关管Q2通断。The Q terminal of the RS flip-flop M outputs an on-off control signal PFM_P, which is driven by the driving unit 502 to control the on-off of the switch tube Q1. The Q terminal of the RS flip-flop M is connected to one input terminal of the NOR gate through the second NOT gate, and the other input terminal of the NOR gate is connected to the output terminal of the zero-crossing comparator 300, and the output terminal outputs the on-off control signal PFM_N through the drive unit 502 is driven to control the on-off of the switch tube Q2.

如图3所示,本实施例中,电流比较器200包括正相电流镜模块210、反相电流镜模块220、第一反相器230及第二反相器240。As shown in FIG. 3 , in this embodiment, the current comparator 200 includes a normal-phase current mirror module 210 , an inverse-phase current mirror module 220 , a first inverter 230 and a second inverter 240 .

电流比较器200正相输入端输入的电流Iin+经正相电流镜模块210镜像与电流比较器200反相输入端输入的电流Iin-(电感峰值电流Ipeak)经反相电流镜模块220镜像到同一节点a;The current I in input by the positive phase input terminal of the current comparator 200 + the current I in input by the negative phase input terminal of the current comparator 200 mirrored by the positive phase current mirror module 210 - (inductor peak current I peak ) by the negative phase current mirror module 220 is mirrored to the same node a;

正相电流镜像模块210包括第一电流镜202和第二电流镜204。The positive phase current mirror module 210 includes a first current mirror 202 and a second current mirror 204 .

第一电流镜202包括N沟道MOS管NMOS1、MOS管NMOS2、MOS管NMOS3、MOS管NMOS4及电阻R2。The first current mirror 202 includes N-channel MOS transistors NMOS1 , MOS transistors NMOS2 , MOS transistors NMOS3 , MOS transistors NMOS4 and a resistor R2 .

MOS管NMOS1漏极经电阻R2接入电流Iin+、栅极与MOS管NMOS2栅极连接后接入电流Iin+、源极与MOS管NMOS3漏极连接,MOS管NMOS3的栅极与MOS管NMOS4栅极连接后与MOS管NMOS1漏极连接、源极与MOS管NMOS4源极接地,MOS管NMOS4漏极与MOS管NMOS2源极连接,MOS管NMOS2漏极与第二电流镜连接;The drain of the MOS transistor NMOS1 is connected to the current I in + through the resistor R2, the gate is connected to the gate of the MOS transistor NMOS2, and then the current I in + is connected, the source is connected to the drain of the MOS transistor NMOS3, and the gate of the MOS transistor NMOS3 is connected to the MOS The gate of the tube NMOS4 is connected to the drain of the MOS tube NMOS1, the source is grounded to the source of the MOS tube NMOS4, the drain of the MOS tube NMOS4 is connected to the source of the MOS tube NMOS2, and the drain of the MOS tube NMOS2 is connected to the second current mirror;

第二电流镜包括P沟道MOS管PMOS1、MOS管PMOS2、MOS管PMOS3、MOS管PMOS4及电阻R3。The second current mirror includes a P-channel MOS transistor PMOS1, a MOS transistor PMOS2, a MOS transistor PMOS3, a MOS transistor PMOS4 and a resistor R3.

MOS管PMOS1源极经电阻R3接MOS管NMOS2漏极、MOS管PMOS1栅极与MOS管PMOS2栅极连接后接入MOS管NMOS2漏极、MOS管PMOS1漏极与MOS管PMOS3源极连接,MOS管PMOS3的栅极与MOS管PMOS4栅极连接后与MOS管PMOS1源极连接、MOS管PMOS3漏极与MOS管PMOS4漏极连接,MOS管PMOS4源极与MOS管PMOS2漏极连接,MOS管PMOS2源极输出正相镜像电流。The source of the MOS tube PMOS1 is connected to the drain of the MOS tube NMOS2 through the resistor R3, the gate of the MOS tube PMOS1 is connected to the gate of the MOS tube PMOS2, and then connected to the drain of the MOS tube NMOS2, and the drain of the MOS tube PMOS1 is connected to the source of the MOS tube PMOS3. The gate of the tube PMOS3 is connected to the gate of the MOS tube PMOS4 and then connected to the source of the MOS tube PMOS1, the drain of the MOS tube PMOS3 is connected to the drain of the MOS tube PMOS4, the source of the MOS tube PMOS4 is connected to the drain of the MOS tube PMOS2, and the drain of the MOS tube PMOS2 The source outputs a positive-phase mirror current.

反相电流镜模块220包括N沟道MOS管NMOS5、MOS管NMOS6、MOS管NMOS7、MOS管NMOS8及电阻R4。The inverting current mirror module 220 includes N-channel MOS transistors NMOS5 , MOS transistors NMOS6 , MOS transistors NMOS7 , MOS transistors NMOS8 and a resistor R4.

MOS管NMOS5漏极经电阻R4接入电流Iin-、MOS管NMOS5栅极与MOS管NMOS6栅极连接后接入电流Iin-、MOS管NMOS5源极与MOS管NMOS7漏极连接,MOS管NMOS7栅极与MOS管NMOS8栅极连接后与MOS管NMOS5漏极连接、MOS管NMOS7源极与MOS管NMOS8源极接地,MOS管NMOS8漏极与MOS管NMOS6源极连接,MOS管NMOS6漏极输出反相镜像电流与MOS管PMOS2源极连接输出正相镜像电流相遇在节点a。The drain of the MOS transistor NMOS5 is connected to the current I in - through the resistor R4, the gate of the MOS transistor NMOS5 is connected to the gate of the MOS transistor NMOS6, and then the current I in - is connected, the source of the MOS transistor NMOS5 is connected to the drain of the MOS transistor NMOS7, and the MOS transistor NMOS5 is connected to the drain of the MOS transistor NMOS7. The gate of NMOS7 is connected to the gate of MOS transistor NMOS8 and then connected to the drain of MOS transistor NMOS5, the source of MOS transistor NMOS7 is connected to the source of MOS transistor NMOS8, the drain of MOS transistor NMOS8 is connected to the source of MOS transistor NMOS6, and the drain of MOS transistor NMOS6 The output negative-phase mirror current is connected to the source of the MOS transistor PMOS2 and the output positive-phase mirror current meets at node a.

若Iin+大于Iin-,则节点a的电压被拉高在电流比较器200输出端输出高电平,即此时V0为高电平;若Iin+小于Iin-,则节点a的电压被拉低在电流比较器200输出端输出低电平,即此时V0为低电平。If I in + is greater than I in -, the voltage of node a is pulled up and outputs a high level at the output terminal of the current comparator 200, that is, V 0 is high at this time; if I in + is less than I in -, the node a The voltage of a is pulled down and the output terminal of the current comparator 200 outputs a low level, that is, V 0 is at a low level at this time.

电流比较器200还包括第一反相器230和第二反相器240。The current comparator 200 also includes a first inverter 230 and a second inverter 240 .

第一反相器230包括P沟道MOS管PMOS5、N沟道MOS管NMOS9,MOS管PMOS5漏极与MOS管PMOS4漏极连接、MOS管PMOS5源极与MOS管NMOS9漏极连接、MOS管PMOS5栅极与MOS管NMOS9栅极连接后接入节点a;The first inverter 230 includes a P-channel MOS transistor PMOS5, an N-channel MOS transistor NMOS9, the drain of the MOS transistor PMOS5 is connected to the drain of the MOS transistor PMOS4, the source of the MOS transistor PMOS5 is connected to the drain of the MOS transistor NMOS9, and the drain of the MOS transistor PMOS5 The gate is connected to the gate of the MOS transistor NMOS9 and connected to node a;

第二反相器240包括P沟道MOS管PMOS6、N沟道MOS管NMOS10,MOS管PMOS6漏极与MOS管PMOS5漏极连接、MOS管PMOS6栅极与MOS管NMOS10栅极连接后与MOS管PMOS5源极连接、MOS管PMOS6源极与MOS管NMOS10漏极连接的节点b为电流比较器200的输出端。The second inverter 240 includes a P-channel MOS transistor PMOS6 and an N-channel MOS transistor NMOS10, the drain of the MOS transistor PMOS6 is connected to the drain of the MOS transistor PMOS5, the gate of the MOS transistor PMOS6 is connected to the gate of the MOS transistor NMOS10, and then connected to the MOS transistor The node b where the source of PMOS5 is connected, the source of MOS transistor PMOS6 is connected to the drain of MOS transistor NMOS10 is the output terminal of the current comparator 200 .

第一反相器230和第二反相器240。用于驱动节点a的节点电压V0使其符合PFM控制模块500的输入请求。本实施例中的电流比较器200,仅仅用了两个镜像电流电路,将输入电流镜像后进行比较。结构十分简单,而且由于驱动电流很低,功耗也很低,只有几十毫微瓦。The first inverter 230 and the second inverter 240 . The node voltage V 0 for driving node a conforms to the input request of the PFM control module 500 . The current comparator 200 in this embodiment only uses two mirror current circuits to compare the input current after mirroring. The structure is very simple, and because the driving current is very low, the power consumption is also very low, only tens of nanowatts.

如图5所示,是电压比较器400的原理图,该电压比较器400采用最经典的电压比较器,结构简单,功耗低,很适用于便携式医疗设备的低功耗要求。As shown in FIG. 5 , it is a schematic diagram of a voltage comparator 400 . The voltage comparator 400 adopts the most classic voltage comparator, has a simple structure and low power consumption, and is very suitable for low power consumption requirements of portable medical equipment.

参考图2,电流比较器200正相输入端经电流检测路600与开关管Q1的输入端连接。Referring to FIG. 2 , the non-inverting input terminal of the current comparator 200 is connected to the input terminal of the switch tube Q1 through the current detection circuit 600 .

如图4所示,电流检测电路600包括P沟道MOS管PMOS7、MOS管PMOS8及放大器,其中,As shown in FIG. 4, the current detection circuit 600 includes a P-channel MOS transistor PMOS7, a MOS transistor PMOS8 and an amplifier, wherein,

如上所述,开关管Q1为P沟道功率MOS管,开关管Q2为N沟道整流MOS管,MOS管PMOS7与开关管Q1,即功率MOS管共漏共栅连接,MOS管PMOS7源极接入放大器一输入端连接,放大器另一输入端与MOS管PMOS8漏极及功率MOS管(开关管Q1)源极连接、输出端与MOS管PMOS8栅极连接,MOS管PMOS8源极输出检测电流Iin+。As mentioned above, the switching tube Q1 is a P-channel power MOS tube, the switching tube Q2 is an N-channel rectifying MOS tube, the MOS tube PMOS7 is connected to the switching tube Q1, that is, the power MOS tube, and the source of the MOS tube PMOS7 is connected to One input terminal of the input amplifier is connected, the other input terminal of the amplifier is connected with the drain of the MOS tube PMOS8 and the source of the power MOS tube (switching tube Q1), the output terminal is connected with the gate of the MOS tube PMOS8, and the source of the MOS tube PMOS8 outputs the detection current I in +.

电流检测电路600,通过MOS管PMOS7将开关管Q1上得电流镜像后,通过载流电路将其检测并输出。The current detection circuit 600 mirrors the current on the switching tube Q1 through the MOS transistor PMOS7, and then detects and outputs it through the current-carrying circuit.

根据:according to:

II dd == 11 22 μCoxμCox WW LL (( VV GSGS -- VV ththe th )) 22 -- -- -- (( 11 ))

其中,Id是MOS管PMOS7流过的漏极电流,也就是导通电流。Wherein, I d is the drain current flowing through the MOS transistor PMOS7, that is, the conduction current.

μ是N沟道或者P沟道器件的表面迁移率(cm2/V*s)。μ is the surface mobility (cm 2 /V*s) of an N-channel or P-channel device.

Cox为单位面积栅氧化物电容(F/cm2)。Cox is the gate oxide capacitance per unit area (F/cm 2 ).

W和L分别为MOS管PMOS7的有效沟道宽度和长度。W and L are the effective channel width and length of the MOS transistor PMOS7 respectively.

VGS是MOS管PMOS7的栅极和源极之间的电压。V GS is the voltage between the gate and source of the MOS transistor PMOS7.

Vth是MOS管PMOS7的阈值电压。V th is the threshold voltage of the MOS transistor PMOS7.

当VGS(PMOS7)=VGS(Q1)时,我们可知When V GS (PMOS7)=V GS (Q1), we know

II DD. (( PMOSPMOS 77 )) :: II DD. (( QQ 11 )) == (( WW LL )) (( PMOSPMOS 77 )) :: (( WW LL )) (( QQ 11 )) -- -- -- (( 22 ))

II inin ++ == II DD. (( QQ 11 )) ** (( WW (( PMOSPMOS 77 )) ** LL (( QQ 11 )) WW (( QQ 11 )) ** LL (( PMOSPMOS 77 )) )) -- -- -- (( 33 ))

其中,ID(PMOS7)和ID(Q1)分别是MOS管PMOS7和开关管Q1的导通电流,W和L分别为MOS管PMOS7的宽度和长度。Wherein, ID (PMOS7) and ID (Q1) are conduction currents of the MOS transistor PMOS7 and the switch transistor Q1 respectively, and W and L are the width and length of the MOS transistor PMOS7 respectively.

从式(3)可以看出Iin+和电感电流IL之间的关系式由MOS管PMOS7和开关管Q1的宽长比决定的,因此,可以通过控制它们的宽长比从而检测到精确的电感电流ILIt can be seen from formula (3) that the relationship between I in + and the inductor current I L is determined by the width-to-length ratio of the MOS transistor PMOS7 and the switch transistor Q1. Therefore, it can be detected accurately by controlling their width-to-length ratio. the inductor current I L .

如图2所示,包括分压电阻R5和分压电阻R6,迟滞比较器即电压比较器400的正相输入端经分压电阻R5连接在电感L与电容C间的节点、经分压电阻R6接地。As shown in FIG. 2 , including a voltage dividing resistor R5 and a voltage dividing resistor R6, the hysteresis comparator, that is, the positive phase input terminal of the voltage comparator 400 is connected to the node between the inductor L and the capacitor C through the voltage dividing resistor R5, and the voltage dividing resistor R6 is grounded.

变换电路100的基本拓扑结构如图2所示。Vin是输入电压,通常为外部电源供电。开关管Q1和开关管Q2是功率MOS管和整流MOS管。实际应用中开关管Q1和开关管Q2通常采用具有很大宽长比的MOS管实现。在正常工作过程中,开关管Q1和开关管Q2以一定的时序一次开通,其中开关管Q1的导通时间为ton,其所占整个开关周期的比例称之为导通占空比,用D表示,开关管Q2的导通时间toff占整个开关周期的比例称为关断占空比,用Doff表示。The basic topology of the conversion circuit 100 is shown in FIG. 2 . Vin is the input voltage, usually powering an external power supply. The switching tube Q1 and the switching tube Q2 are power MOS tubes and rectification MOS tubes. In practical applications, the switch tube Q1 and the switch tube Q2 are usually implemented by MOS tubes with a large width-to-length ratio. In the normal working process, the switch tube Q1 and the switch tube Q2 are turned on at a certain time sequence, and the conduction time of the switch tube Q1 is ton. It means that the ratio of the turn-on time toff of the switch tube Q2 to the entire switching cycle is called the turn-off duty cycle, which is expressed by Doff.

首先假定开关管Q1和开关管Q2都是理想开关,它们的导通电阻均为0,假设导通的时间加上不导通的时间是开关周期。由于导通时间加上关断时间等于开关周期,电感中得电流不会出现下降到零的情况,所以又称之为电流连续工作模式(Continuous Conduction Mode,CCM)。Firstly, it is assumed that the switching tube Q1 and the switching tube Q2 are ideal switches, and their on-resistances are both 0, and it is assumed that the switching period is the switching period plus the non-conducting time. Since the on-time plus the off-time is equal to the switching period, the current in the inductor will not drop to zero, so it is also called the continuous current mode (Continuous Conduction Mode, CCM).

在一个开关周期T内,0—ton时间内开关管Q1导通,电流就通过电感L,开关管Q1以及电容C对负载供电,这时电感L作为储能原件。这时节点SW电压Vsw等于输入电压Vin,电感电流按照固定的斜率上升,其斜率可表示为:In a switching period T, the switch tube Q1 is turned on during 0-t on time, and the current passes through the inductor L, the switch tube Q1 and the capacitor C to supply power to the load. At this time, the inductor L is used as an energy storage element. At this time, the node SW voltage V sw is equal to the input voltage V in , and the inductor current rises according to a fixed slope, and the slope can be expressed as:

Son=(Vin-Vout)/L                (4)S on =(V in -V out )/L (4)

其中,Son为电感电流IL上升的斜率,Vin和Vout分别为输入电压和输出电压,L为电感的值。Among them, S on is the rising slope of the inductor current IL , V in and V out are the input voltage and output voltage respectively, and L is the value of the inductor.

那么在ton-T时间内,开关管Q1关断,开关管Q2打开,电感L中储存的能量释放给负载和电容C,这时的节点SW电压Vsw等于0。电感L中得电流IL就会按照固定的斜率下降,其斜率为:Then, within the time t on -T, the switch tube Q1 is turned off, the switch tube Q2 is turned on, and the energy stored in the inductor L is released to the load and the capacitor C, and the node SW voltage V sw is equal to 0 at this time. The current I L in the inductor L will drop according to a fixed slope, and its slope is:

Soff=Vout/L                  (5)S off =V out /L (5)

在一个周期内,SW电压均值为:In one cycle, the average SW voltage is:

Asw=D*Vin A sw =D*V in

其中,Soff为电感电流IL下降的斜率,Asw为节点SW的电压Vsw的均值。Wherein, S off is the falling slope of the inductor current IL , and As sw is the average value of the voltage V sw of the node SW.

由于节点SW的电压Vsw包括所有斩波电路的作用。电感电流的改变值和输出电压可分别表示为:Since the voltage V sw at node SW includes the action of all chopper circuits. The changed value of the inductor current and the output voltage can be expressed as:

ΔIΔI LL == VV outout LL (( TT -- tt onon )) -- -- -- (( 66 ))

Vout=D*Vin                  (7)V out = D*V in (7)

其中,△IL为电感电流的改变值,T为开关周期,ton为开关管Q1导通的时间,D为开关管Q1导通的占空比。Among them, △ IL is the change value of the inductor current, T is the switching period, t on is the time when the switch tube Q1 is turned on, and D is the duty cycle of the switch tube Q1.

上面的分析是基于:导通的时间加上关断的时间为整个开关周期,假设电路中的电感L比较小,输出电感电流IL比较小或者开关周期T比较长的情况时,当电感电流下降到零时,新的周期仍然没有开始,这种情况被称为电感电流不连续模式(Discontinuous Conduction Mod,DCM)。此时,开关管Q1和开关管Q2的控制信号CLK_PMOS和CLK_NMOS,电感L上的电感电流IL如图6所示。电感电流IL的改变值和输出电压可以分别表示为如下:The above analysis is based on: the turn-on time plus the turn-off time is the entire switching cycle, assuming that the inductance L in the circuit is relatively small, the output inductor current I L is relatively small or the switching cycle T is relatively long, when the inductor current When it drops to zero, a new cycle still does not start, this situation is called the inductor current discontinuous mode (Discontinuous Conduction Mod, DCM). At this time, the control signals CLK_PMOS and CLK_NMOS of the switching transistor Q1 and the switching transistor Q2 and the inductor current I L on the inductor L are shown in FIG. 6 . The change value of the inductor current I L and the output voltage can be expressed as follows:

ΔIΔI LL == VV outout LL ** tt offoff -- -- -- (( 88 ))

VV outout == DD. DD. ++ DD. offoff ** VV inin -- -- -- (( 99 ))

其中,Toff为开关的关断时间。Among them, T off is the off time of the switch.

这种结构的DC-DC转换器输出电压Vout都低于或者等于输入电压Vin,所以我们称之为buck转换器。The output voltage V out of the DC-DC converter with this structure is lower than or equal to the input voltage V in , so we call it a buck converter.

如图7和图8所示,分别为:当Vin=5V和Vin=3.5V时输出电压Vout和电感电流IL的仿真结果。由此可见,在很大的输入范围内,输出电压都可以保持一个恒定不变的输出电压Vout不变。As shown in FIG. 7 and FIG. 8 , they are respectively: the simulation results of the output voltage V out and the inductor current IL when V in =5V and V in =3.5V. It can be seen that, in a large input range, the output voltage can maintain a constant output voltage V out .

如图9所示,进一步以一个阶跃的输入电压,Vin=3.5V到Vin=6V,得到的输出电压仍然为Vout=2.5V,并且纹波很小,只有十几毫伏。As shown in FIG. 9 , with a step input voltage, V in =3.5V to V in =6V, the output voltage is still V out =2.5V, and the ripple is very small, only ten millivolts.

如图10所示,以一个阶跃的负载电流,Iload=0mA到Iload=24mA,得到的输出电压仍然为VOUT=2.5V,说明该芯片的负载能力足够医疗芯片的应用。As shown in FIG. 10 , with a step load current, from I load =0mA to I load =24mA, the obtained output voltage is still VOUT=2.5V, which shows that the load capacity of the chip is sufficient for the application of medical chips.

如图11所示,为降压转换器仿真后得到的不同负载电流下的转换效率曲线。As shown in Fig. 11, it is the conversion efficiency curve under different load currents obtained after the step-down converter simulation.

请参考图1,降压转换器的连接结构为:串联分压电阻R5和分压电阻R6与变换电路100的输出直流电压Vout相接,并将一部分输出电压Vfb反馈到电压比较器100的反相输入端,与带隙基准BGR产生的参考电压Vref进行比较,输出电平Voe1与过零比较器300的输出Vinv信号通过一个与门(AND gate)控制电路中的RS触发器M的R端(清零端)将控制信号PFM_P置为“0”,经过驱动电路502后产生信号CLK_PMOS控制开关管Q1使其导通。电流检测电路600输入端与开关管Q1的源极相接,输出电流Iin+接入电流比较器200的正向输入端,与反向输入端的参考电流Ipeak进行比较后,产生信号Vie。迟滞比较器(电压比较器400)的输出电平Voe1经第一非门反向后和信号Vie经过或门(OR gate),控制电路中的RS触发器M的S端(置位端)将控制信号PFM_P置为“1”。过零比较器300的正向输入端接入电感L正端的电压Vsw,反向输入端接地GND,输出Vinv,开关管Q1的控制信号PFM_P经第二非门反向后与该信号Vinv接入或非门(NOR gate)产生信号PFM_N,经过驱动电路502产生开关管Q2的控制信号CLK_NMOS。控制信号CLK_PMOS和CLK_NMOS分别接入开关管Q1和开关管Q2的栅极。同时,当开关管Q1关断时,就不需要电流比较器200进行电流比较,同时也不需要电流检测电路600检测电流Iin+,因此,本发明采用动态关断策略,将电流比较器200和电流检测电路600关断,从而降低了无谓的功率损耗,提高了转换效率。以解决现有的DC-DC变换器存在的主开关器件开关损耗大、附加时钟电路体积大、成本高、效率低的问题。使其很好的适用于医疗芯片的应用中。Please refer to FIG. 1 , the connection structure of the step-down converter is as follows: the voltage dividing resistor R5 and the voltage dividing resistor R6 are connected in series with the output DC voltage V out of the conversion circuit 100 , and a part of the output voltage V fb is fed back to the voltage comparator 100 The inverting input terminal of the bandgap reference BGR is compared with the reference voltage V ref generated by the bandgap reference BGR, and the output level V oe1 and the output V inv signal of the zero-crossing comparator 300 are triggered by RS in an AND gate (AND gate) control circuit The R terminal (clearing terminal) of the device M sets the control signal PFM_P to "0", and after passing through the driving circuit 502, the signal CLK_PMOS is generated to control the switch tube Q1 to turn on. The input terminal of the current detection circuit 600 is connected to the source of the switch tube Q1, the output current I in + is connected to the positive input terminal of the current comparator 200, and is compared with the reference current I peak of the negative input terminal to generate a signal V ie . The output level V oe1 of the hysteresis comparator (voltage comparator 400) is reversed by the first NOT gate and the signal Vi ie passes through the OR gate (OR gate), and the S terminal (setting terminal) of the RS flip-flop M in the control circuit ) sets the control signal PFM_P to "1". The positive input terminal of the zero-crossing comparator 300 is connected to the voltage V sw of the positive terminal of the inductor L, the negative input terminal is grounded to GND, and outputs V inv . inv is connected to a NOR gate to generate a signal PFM_N, and the control signal CLK_NMOS of the switch transistor Q2 is generated through the driving circuit 502 . The control signals CLK_PMOS and CLK_NMOS are connected to the gates of the switching transistor Q1 and the switching transistor Q2 respectively. At the same time, when the switching tube Q1 is turned off, the current comparator 200 is not required to perform current comparison, and the current detection circuit 600 is not required to detect the current I in +. Therefore, the present invention adopts a dynamic shutdown strategy, and the current comparator 200 And the current detection circuit 600 is turned off, thereby reducing unnecessary power loss and improving conversion efficiency. The invention solves the problems of large switching loss of a main switching device, large volume of an additional clock circuit, high cost and low efficiency existing in the existing DC-DC converter. It is very suitable for the application of medical chips.

此外,降压转换器在工作过程中,静态电流仅有几十毫微瓦。另外,采用内部产生的数字信号作为控制信号,从而省去了额外的负延时、one-shot等控制模块,提高了电路的稳定性,降低了电路结构复杂度和功耗。同时,PFM控制电路500中采用动态部分关断策略,有效的减少系统损耗,提高了效率。从而适用于有低功耗要求的生物医学设备。In addition, the quiescent current of the buck converter is only tens of nanowatts during operation. In addition, the internally generated digital signal is used as the control signal, thereby eliminating the need for additional control modules such as negative delay and one-shot, improving the stability of the circuit, and reducing the complexity of the circuit structure and power consumption. At the same time, the PFM control circuit 500 adopts a dynamic partial shutdown strategy, which effectively reduces system loss and improves efficiency. Therefore, it is suitable for biomedical equipment with low power consumption requirements.

以上所述实施例仅表达了本发明的几种实施方式,其描述较为具体和详细,但并不能因此而理解为对本发明专利范围的限制。应当指出的是,对于本领域的普通技术人员来说,在不脱离本发明构思的前提下,还可以做出若干变形和改进,这些都属于本发明的保护范围。因此,本发明专利的保护范围应以所附权利要求为准。The above-mentioned embodiments only express several implementation modes of the present invention, and the description thereof is relatively specific and detailed, but should not be construed as limiting the patent scope of the present invention. It should be pointed out that those skilled in the art can make several modifications and improvements without departing from the concept of the present invention, and these all belong to the protection scope of the present invention. Therefore, the protection scope of the patent for the present invention should be based on the appended claims.

Claims (8)

1.一种降压转换器,其特征在于,包括变换电路、过零比较器、电流比较器、电压比较器及PFM控制电路;1. A step-down converter, characterized in that, comprises a conversion circuit, a zero-crossing comparator, a current comparator, a voltage comparator and a PFM control circuit; 所述变换电路包括输入端与电源连接的开关管Q1、输出端与所述开关管Q1输出端连接且输入端接地的开关管Q2、一端与所述开关管Q1输出端连接的电感L、一端与所述电感L连接另一端接地的电容C及并联在所述电容C两端的电阻R1;The conversion circuit includes a switching tube Q1 whose input end is connected to the power supply, a switching tube Q2 whose output end is connected to the output end of the switching tube Q1 and whose input end is grounded, an inductor L connected to the output end of the switching tube Q1 at one end, and A capacitor C connected to the ground at the other end of the inductor L and a resistor R1 connected in parallel to both ends of the capacitor C; 所述电压比较器的反相输入端连接在所述电感L与所述电容C间的节点、正相输入端输入基准电压,并将比较结果输入所述PFM控制电路;The inverting input terminal of the voltage comparator is connected to the node between the inductor L and the capacitor C, the non-inverting input terminal inputs a reference voltage, and the comparison result is input into the PFM control circuit; 所述电流比较器的正相输入端与所述开关管Q1的输入端连接、反相输入端输入所述电感L的电流峰值,并将比较结果输入所述PFM控制电路;The non-inverting input terminal of the current comparator is connected to the input terminal of the switching tube Q1, the inverting input terminal inputs the current peak value of the inductor L, and the comparison result is input into the PFM control circuit; 所述过零比较器的正相输入端与所述开关管Q1输出端连接、反相输入端接地,并将比较结果输入所述PFM控制电路;The non-inverting input terminal of the zero-crossing comparator is connected to the output terminal of the switching tube Q1, the inverting input terminal is grounded, and the comparison result is input into the PFM control circuit; 所述PFM控制电路根据所述电压比较器、电流比较器以及过零比较器的比较结果输出控制开关管Q1和开关管Q2通断的控制信号;The PFM control circuit outputs a control signal for controlling the on-off of the switching tube Q1 and the switching tube Q2 according to the comparison results of the voltage comparator, the current comparator, and the zero-crossing comparator; 所述电流比较器包括正相电流镜模块、反相电流镜模块,其中,The current comparator includes a positive-phase current mirror module and a reverse-phase current mirror module, wherein, 所述电流比较器正相输入端输入的电流Iin+经所述正相电流镜模块镜像与所述电流比较器反相输入端输入的电流Iin-经所述反相电流镜模块镜像到同一节点a;The current I in input by the positive-phase input terminal of the current comparator is mirrored by the positive-phase current mirror module and the current I in input by the negative-phase input terminal of the current comparator is mirrored by the negative-phase current mirror module to the same node a; 若Iin+大于Iin-,则所述节点a的电压被拉高在所述电流比较器输出端输出高电平;If I in + is greater than I in -, the voltage of the node a is pulled up and the output terminal of the current comparator outputs a high level; 若Iin+小于Iin-,则所述节点a的电压被拉低在所述电流比较器输出端输出低电平;If I in + is less than I in -, the voltage of the node a is pulled down and the output terminal of the current comparator outputs a low level; 所述正相电流镜像模块包括第一电流镜、第二电流镜,其中,The positive-phase current mirror module includes a first current mirror and a second current mirror, wherein, 第一电流镜包括N沟道MOS管NMOS1、MOS管NMOS2、MOS管NMOS3、MOS管NMOS4及电阻R2,其中,The first current mirror includes N-channel MOS transistors NMOS1, MOS transistors NMOS2, MOS transistors NMOS3, MOS transistors NMOS4 and resistor R2, wherein, 所述MOS管NMOS1漏极经所述电阻R2接入电流Iin+、栅极与所述MOS管NMOS2栅极连接后接入电流Iin+、源极与所述MOS管NMOS3漏极连接,所述MOS管NMOS3的栅极与所述MOS管NMOS4栅极连接后与所述MOS管NMOS1漏极连接、源极与所述MOS管NMOS4源极接地,所述MOS管NMOS4漏极与所述MOS管NMOS2源极连接,所述MOS管NMOS2漏极与所述第二电流镜连接;The drain of the MOS transistor NMOS1 is connected to the current I in + through the resistor R2, the gate is connected to the gate of the MOS transistor NMOS2, and then the current I in + is connected, and the source is connected to the drain of the MOS transistor NMOS3, The gate of the MOS transistor NMOS3 is connected to the gate of the MOS transistor NMOS4 and then connected to the drain of the MOS transistor NMOS1, the source is grounded to the source of the MOS transistor NMOS4, and the drain of the MOS transistor NMOS4 is connected to the drain of the MOS transistor NMOS1. The source of the MOS transistor NMOS2 is connected, and the drain of the MOS transistor NMOS2 is connected to the second current mirror; 第二电流镜包括P沟道MOS管PMOS1、MOS管PMOS2、MOS管PMOS3、MOS管PMOS4及电阻R3,其中,The second current mirror includes a P-channel MOS transistor PMOS1, a MOS transistor PMOS2, a MOS transistor PMOS3, a MOS transistor PMOS4, and a resistor R3, wherein, 所述MOS管PMOS1源极经所述电阻R3接所述MOS管NMOS2漏极、栅极与所述MOS管PMOS2栅极连接后接入所述MOS管NMOS2漏极、漏极与所述MOS管PMOS3源极连接,所述MOS管PMOS3的栅极与所述MOS管PMOS4栅极连接后与所述MOS管PMOS1源极连接、漏极与所述MOS管PMOS4漏极连接,所述MOS管PMOS4源极与所述MOS管PMOS2漏极连接,所述MOS管PMOS2源极输出正相镜像电流。The source of the MOS transistor PMOS1 is connected to the drain of the MOS transistor NMOS2 through the resistor R3, and the gate is connected to the gate of the MOS transistor PMOS2, and then connected to the drain of the MOS transistor NMOS2, and the drain is connected to the MOS transistor The source of PMOS3 is connected, the gate of the MOS transistor PMOS3 is connected to the gate of the MOS transistor PMOS4 and then connected to the source of the MOS transistor PMOS1, and the drain is connected to the drain of the MOS transistor PMOS4, and the gate of the MOS transistor PMOS4 The source is connected to the drain of the MOS transistor PMOS2, and the source of the MOS transistor PMOS2 outputs a positive-phase mirror current. 2.根据权利要求1所述的降压转换器,其特征在于,所述反相电流镜模块包括N沟道MOS管NMOS5、MOS管NMOS6、MOS管NMOS7、MOS管NMOS8及电阻R4,其中,2. The step-down converter according to claim 1, wherein the inverting current mirror module comprises N-channel MOS transistors NMOS5, MOS transistors NMOS6, MOS transistors NMOS7, MOS transistors NMOS8 and resistor R4, wherein, 所述MOS管NMOS5漏极经所述电阻R4接入电流Iin-、栅极与所述MOS管NMOS6栅极连接后接入电流Iin-、源极与所述MOS管NMOS7漏极连接,所述MOS管NMOS7栅极与所述MOS管NMOS8栅极连接后与所述MOS管NMOS5漏极连接、源极与所述MOS管NMOS8源极接地,所述MOS管NMOS8漏极与所述MOS管NMOS6源极连接,所述MOS管NMOS6漏极输出反相镜像电流与所述MOS管PMOS2源极连接输出正相镜像电流相遇。The drain of the MOS transistor NMOS5 is connected to the current I in − through the resistor R4, the gate is connected to the gate of the MOS transistor NMOS6, and the current I in − is connected to the drain, and the source is connected to the drain of the MOS transistor NMOS7, The gate of the MOS transistor NMOS7 is connected to the gate of the MOS transistor NMOS8 and then connected to the drain of the MOS transistor NMOS5, the source is grounded to the source of the MOS transistor NMOS8, and the drain of the MOS transistor NMOS8 is connected to the drain of the MOS transistor NMOS8. The source of the transistor NMOS6 is connected, and the drain of the MOS transistor NMOS6 outputs an inverse mirror current and the source of the MOS transistor PMOS2 is connected to output a positive mirror current. 3.根据权利要求2所述的降压转换器,其特征在于,所述电流比较器还包括第一反相器、第二反相器,其中,3. The step-down converter according to claim 2, wherein the current comparator further comprises a first inverter and a second inverter, wherein, 所述第一反相器包括P沟道MOS管PMOS5、N沟道MOS管NMOS9,所述MOS管PMOS5漏极与所述MOS管PMOS4漏极连接、源极与所述MOS管NMOS9漏极连接、栅极与所述MOS管NMOS9栅极连接后接入所述节点a;The first inverter includes a P-channel MOS transistor PMOS5 and an N-channel MOS transistor NMOS9, the drain of the MOS transistor PMOS5 is connected to the drain of the MOS transistor PMOS4, and the source is connected to the drain of the MOS transistor NMOS9 , the gate is connected to the gate of the MOS transistor NMOS9 and then connected to the node a; 所述第二反相器包括P沟道MOS管PMOS6、N沟道MOS管NMOS10,所述MOS管PMOS6漏极与所述MOS管PMOS5漏极连接、栅极与所述MOS管NMOS10栅极连接后与所述MOS管PMOS5源极连接、源极与所述MOS管NMOS10漏极连接的节点b为所述电流比较器输出端。The second inverter includes a P-channel MOS transistor PMOS6 and an N-channel MOS transistor NMOS10, the drain of the MOS transistor PMOS6 is connected to the drain of the MOS transistor PMOS5, and the gate is connected to the gate of the MOS transistor NMOS10 The node b connected to the source of the MOS transistor PMOS5 and the drain of the MOS transistor NMOS10 is the output terminal of the current comparator. 4.根据权利要求1所述的降压转换器,其特征在于,所述PFM控制模块包括与门、第一非门、第二非门、或门、或非门及RS触发器,其中,4. The step-down converter according to claim 1, wherein the PFM control module comprises an AND gate, a first NOT gate, a second NOT gate, an OR gate, a NOR gate and an RS flip-flop, wherein, 所述与门两输入端分别与所述电压比较器的输出端及过零比较器的输出端连接、输出端与所述RS触发器的R端连接,所述或门一输入端经所述第一非门与所述电压比较器的输出端连接,另一输入端与所述电流比较器输出端连接、输出端与所述RS触发器的S端连接,所述第一非门的输入端与电压比较器的输出端连接、输出端与或门一输入端连接;The two input ends of the AND gate are respectively connected with the output end of the voltage comparator and the output end of the zero-crossing comparator, and the output end is connected with the R end of the RS flip-flop, and one input end of the OR gate is passed through the The first NOT gate is connected to the output terminal of the voltage comparator, the other input terminal is connected to the output terminal of the current comparator, the output terminal is connected to the S terminal of the RS flip-flop, and the input of the first NOT gate The terminal is connected with the output terminal of the voltage comparator, and the output terminal is connected with an input terminal of the OR gate; 所述RS触发器的Q端输出通断控制信号经驱动单元驱动以控制所述开关管Q1通断;The Q terminal of the RS flip-flop outputs an on-off control signal driven by the drive unit to control the on-off of the switching tube Q1; 所述RS触发器的Q端经所述第二非门与所述或非门一输入端连接,所述或非门另一输入端与所述过零比较器的输出端连接、输出端输出通断控制信号经驱动单元驱动以控制所述开关管Q2通断。The Q terminal of the RS flip-flop is connected to an input terminal of the NOR gate through the second NOT gate, and the other input terminal of the NOR gate is connected to the output terminal of the zero-crossing comparator, and the output terminal outputs The on-off control signal is driven by the driving unit to control the on-off of the switching tube Q2. 5.根据权利要求1所述的降压转换器,其特征在于,还包括电流检测电路,所述电流比较器正相输入端经所述电流检测电路与所述开关管Q1的输入端连接。5 . The step-down converter according to claim 1 , further comprising a current detection circuit, the positive phase input terminal of the current comparator is connected to the input terminal of the switch tube Q1 through the current detection circuit. 6.根据权利要求5所述的降压转换器,其特征在于,所述电流检测电路包括P沟道MOS管PMOS7、MOS管PMOS8及放大器,其中,6. The step-down converter according to claim 5, wherein the current detection circuit comprises a P-channel MOS transistor PMOS7, a MOS transistor PMOS8 and an amplifier, wherein, 所述开关管Q1为P沟道功率MOS管,所述开关管Q2为N沟道整流MOS管,所述MOS管PMOS7与所述功率MOS管共漏共栅连接,所述MOS管PMOS7源极与所述放大器一输入端连接,所述放大器另一输入端与所述MOS管PMOS8漏极及所述功率MOS管源极连接、输出端与所述MOS管PMOS8栅极连接,所述MOS管PMOS8源极输出检测电流。The switching tube Q1 is a P-channel power MOS tube, the switching tube Q2 is an N-channel rectifying MOS tube, the MOS tube PMOS7 is connected to the power MOS tube with common drain and common gate, and the source of the MOS tube PMOS7 is It is connected with one input end of the amplifier, the other input end of the amplifier is connected with the drain of the MOS transistor PMOS8 and the source of the power MOS transistor, the output end is connected with the gate of the MOS transistor PMOS8, and the MOS transistor PMOS8 source output sense current. 7.根据权利要求1所述的降压转换器,其特征在于,还包括带隙基准,所述电压比较器为迟滞比较器,所述带隙基准与所述迟滞比较器正相输入端连接。7. The buck converter according to claim 1, further comprising a bandgap reference, the voltage comparator is a hysteresis comparator, and the bandgap reference is connected to the non-inverting input of the hysteresis comparator . 8.根据权利要求7所述的降压转换器,其特征在于,还包括分压电阻R5和分压电阻R6,所述迟滞比较器正相输入端经所述分压电阻R5连接在所述电感L与所述电容C间的节点、经所述分压电阻R6接地。8. The step-down converter according to claim 7, further comprising a voltage dividing resistor R5 and a voltage dividing resistor R6, the positive phase input terminal of the hysteresis comparator is connected to the A node between the inductor L and the capacitor C is grounded through the voltage dividing resistor R6.
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Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103944385B (en) * 2014-03-24 2016-06-01 矽力杰半导体技术(杭州)有限公司 The pilot circuit of a kind of super low speed paper tape reader static power disspation, control method and switch type regulator
CN103929048B (en) * 2014-04-29 2016-04-20 中国科学院上海微系统与信息技术研究所 A kind of zero cross detection circuit of Switching Power Supply
CN104201887B (en) * 2014-09-01 2017-03-01 矽力杰半导体技术(杭州)有限公司 Zero adjustment circuit and the method excessively of buck convertor
CN107147285B (en) * 2017-05-31 2019-09-20 深圳芯智汇科技有限公司 Control method, device and its storage equipment of DC-DC conversion circuit
CN111435819B (en) * 2019-12-05 2021-11-23 珠海市杰理科技股份有限公司 Step-down hysteresis type switch converter and control method thereof
CN111130314B (en) * 2020-01-17 2024-07-12 深圳市纳芯威科技有限公司 Power supply integrated circuit and power supply generating circuit
US12027890B2 (en) * 2020-04-02 2024-07-02 Qualcomm Incorporated Modulating supply voltage generated by voltage regulator for transmission of data and power
CN111736686B (en) * 2020-06-12 2023-04-11 苏州浪潮智能科技有限公司 Protection circuit and server of SCC circuit are opened unusually
CN114499173B (en) * 2022-01-11 2022-09-09 上海翰迈电子科技有限公司 Method, device and chip for controlling buck converter
CN114665849B (en) * 2022-02-23 2023-04-07 电子科技大学 High-precision current comparator
CN116979806B (en) * 2023-09-22 2024-02-20 希荻微电子集团股份有限公司 Switch control circuit and method and power conversion system

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1881763A (en) * 2005-06-17 2006-12-20 威盛电子股份有限公司 Pulse frequency mode dc-dc converter circuit
CN101419477A (en) * 2007-10-22 2009-04-29 三星电子株式会社 Controllable low voltage differential linear voltage stabilizing circuit for providing multi-output voltages
CN101834522A (en) * 2009-03-12 2010-09-15 登丰微电子股份有限公司 Conversion circuit and conversion controller with noise prevention
CN202111621U (en) * 2011-07-08 2012-01-11 武汉大学 A Step-Down DC-DC Converter with Current Mode Frequency Compensation Device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101658783B1 (en) * 2010-05-26 2016-09-23 삼성전자주식회사 Power converter having a zero-current detecting circuit and method of converting power

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1881763A (en) * 2005-06-17 2006-12-20 威盛电子股份有限公司 Pulse frequency mode dc-dc converter circuit
CN101419477A (en) * 2007-10-22 2009-04-29 三星电子株式会社 Controllable low voltage differential linear voltage stabilizing circuit for providing multi-output voltages
CN101834522A (en) * 2009-03-12 2010-09-15 登丰微电子股份有限公司 Conversion circuit and conversion controller with noise prevention
CN202111621U (en) * 2011-07-08 2012-01-11 武汉大学 A Step-Down DC-DC Converter with Current Mode Frequency Compensation Device

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
A Monolithic Current-Mode Buck Converter With Advanced Control and Protection Circuits;Feng-Fei Ma et al.;《IEEE TRANSACTIONS ON POWER ELECTRONICS》;20070930;第22卷(第5期);第1836-1846页 *
一种高速高精度CMOS电流比较器;柳娟娟等;《电子器件》;20061231;第29卷(第4期);第1039-1041页 *

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