CN103241701A - 3-degree of freedom (DOF) silicon-based plane parallel-connection positioning platform with automatic displacement detecting function and manufacture method - Google Patents
3-degree of freedom (DOF) silicon-based plane parallel-connection positioning platform with automatic displacement detecting function and manufacture method Download PDFInfo
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- CN103241701A CN103241701A CN2012100238148A CN201210023814A CN103241701A CN 103241701 A CN103241701 A CN 103241701A CN 2012100238148 A CN2012100238148 A CN 2012100238148A CN 201210023814 A CN201210023814 A CN 201210023814A CN 103241701 A CN103241701 A CN 103241701A
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Abstract
The invention relates to a 3-degree of freedom (DOF) silicon-based plane parallel-connection positioning platform with an automatic displacement detecting function and a manufacture method. The positioning platform comprises a monocrystalline silicon substrate and a glass substrate, wherein a carrying table, a static comb tooth actuator, a detecting beam, a folding beam, a flexible support beam and flexible hinges are arranged on the monocrystalline silicon substrate. The carrying table is located at the center of the monocrystalline silicon substrate, can perform 3-DOF motion and is sequentially connected with the flexible support beam, the folding beam, the static comb tooth actuator and the detecting beam through the flexible hinges, a displacement detection sensor is integrated on the detecting beam, an actuator drive electrode connected with the static comb tooth actuator is arranged on the glass substrate, and the carrying table, the static comb tooth actuator, the detecting beam, the folding beam, the flexible support beam and the flexible hinges on the monocrystalline silicon substrate are integrally processed on the same substrate by means of a body silicon technology. Compared with the prior art, the 3-DOF silicon-based plane parallel-connection positioning platform integrates a structure, driving and displacement detection, can achieve real-time detection and control of displacement in all directions and is high in positioning accuracy.
Description
Technical field
What the present invention relates to is a kind of 3-DOF silicon-base plane with displacement self-checking function locating platform in parallel and preparation method, a kind of silica-based locating platform of 3-DOF that adopts side direction translation static broach to drive specifically, can realize the translation of X and Y-direction and along the rotation of Z axle, and integrated displacement detecting sensor based on the pressure drag detection technique can be realized real-time detection and control to each direction of motion displacement on this platform.
Background technology
Jiggle robot has broad application prospects in fields such as precision optical machinery engineering, optics adjustment, optical fiber operation, data storage, bioengineering as an important component part of micro OS.In recent years, because micro-nano process technology constantly perfect, deep reaction ion etching (DRIE) technology increasingly mature used the miniature locating platform of bulk silicon micro mechanic fabrication techniques to be subjected to people's attention.The continuous progress of simultaneous micro-nano operating technology, operand develops towards miniaturization, microminiaturized direction, these all require power tool should have sufficiently high positioning accuracy, so the control of the position closed loop of locating platform will be a very important development trend.
Because it is little to have the overall structure size based on the locating platform of silicon micro-machining technology, characteristics such as integrated stress sensitive resistance-type displacement detecting sensor difficulty, up to the present, the report of integrated stress sensitive resistance-type displacement detecting sensor is few on locating platform.People such as Wang Jia farmland have proposed the nano-scale localization platform that a kind of integrated displacement detects in 2008, the displacement detecting sensor of forming by integrated sidewall stress sensitive resistance on the static broach actuator, thereby realized the real-time control [L.N.Sun to the output displacement of objective table, J.C.Wang, W.B.Rong, et al.A Silicon Integrated Micro Nano-Posistioning XY-stage for Nano-manipulation J.Micromech.Microeng., vol.18, no.12, pp.1～9,2008.], but its locating platform is a kind of 2-DOF locating platform, and it can only realize the translation function of X and Y aspect, can not realize rotating, therefore aspect power tool, limit its range of application greatly.People such as Bonjin Koo have proposed a kind of 2-DOF silicon-base plane locating platform [B.J.Koo in parallel with position closed loop control recently, X.M.Zhang, J.Y. Dong, et al.A 2Degree-of-Freedom SOI-MEMS Translation Stage With Closed-Loop Positioning J.Microelectromech.Syst., vol.21, no.1, pp.1～9,2012.], this kind locating platform also can only be realized the translation on X and the Y-direction, and adopt the differential capacitance detection mode to realize platform is exported the real-time detection function of displacement, with respect to for the pressure drag detection technique, capacitance detecting is because its detection changes in capacitance amount is all very little, mostly in the pico farad magnitude, and there is bigger parasitic capacitance in locating platform itself, and these have all increased the complex process degree of subsequent detection circuit greatly.In addition, this locating platform adopts the SOI monocrystalline silicon piece to make, and has increased the cost of manufacture of platform greatly, is unfavorable for batch making.
Summary of the invention
Purpose of the present invention is exactly to provide a kind of 3-DOF silicon-base plane with displacement self-checking function locating platform in parallel and preparation method for the defective that overcomes above-mentioned prior art existence, the locating platform structure set, driving and the displacement detecting that provide are in one, can realize the translation of directions X and Y-direction and around the rotation of Z axle, simultaneously can carry out real-time detection function to each moving displacement, thereby further improve the platform positioning accuracy.
Purpose of the present invention can be achieved through the following technical solutions:
A kind of 3-DOF silicon-base plane with displacement self-checking function locating platform in parallel, comprise monocrystalline silicon substrate and glass substrate, described monocrystalline silicon substrate is located at the glass substrate top, monocrystalline silicon substrate is provided with objective table, the static broach actuator, detect beam, folded beam, the flexible support beam, flexible hinge and detecting sensor, but described objective table is positioned at central authorities and the three-degree-of-freedom motion of monocrystalline silicon substrate, objective table connects the flexible support beam successively by flexible hinge, folded beam, static broach actuator and detection beam, be integrated with displacement detecting sensor on the described detection beam, described glass substrate is provided with the actuator drive electrode that is connected with the static broach actuator.
Described objective table is isosceles triangular structure, and each drift angle place of isosceles triangular structure all connects flexible support beam, folded beam, static broach actuator successively and detects beam formation y-type structure by flexible hinge.
Described displacement monitoring sensor comprises two outer meeting resistances and two stress piezo-resistances that are located on the detection beam, and described two outer meeting resistances and two stress piezo-resistances are formed the half-bridge testing circuits.
The mode that described two stress piezo-resistances adopt ion to inject is arranged on the upper surface that detects the beam two ends.
Described two stress piezo-resistances are provided with lead-in wire and pad, and described lead-in wire and pad are fixed on the monocrystalline silicon substrate upper surface.
Described monocrystalline silicon substrate adopts the monocrystalline silicon substrate of (111) crystal face.
Objective table on the described monocrystalline silicon substrate, static broach actuator, detection beam, folded beam, flexible support beam, flexible hinge and detecting sensor adopt bulk silicon technological integrated being processed to form on same monocrystalline silicon substrate.
Described flexible hinge is the circular arc flexible hinge.
Described static broach actuator is push-pull side direction translation static broach actuator.
The preparation method of a kind of 3-DOF silicon-base plane for above-mentioned band displacement self-checking function locating platform in parallel may further comprise the steps:
1) the twin polishing monocrystalline silicon substrate of employing (111) crystal face, monocrystalline silicon substrate thickness is got 350 μ m, electrical resistivity range is got 1 Ω cm～12 Ω cm, by the mode of carrying out the injection of boron ion to this monocrystalline silicon substrate stress sensitive resistance is set, inject the inclination angle and get 7 °～12 °, the resistance value of stress sensitive resistance is 82～90 ohm;
2) fairlead of making stress sensitive resistance, the sputtered aluminum film forms lead-in wire and pad at the monocrystalline silicon substrate upper surface then;
3) monocrystalline silicon substrate lower surface resist coating and make the movable structural region of static broach actuator, folded beam, flexible support beam, objective table, detection beam by lithography and the electrostatic actuator lead-in wire electrode cabling band of position, utilize silicon deep reaction ion etching technology to etch described movable structural region and the cabling band of position then, etching depth is 300 μ m;
4) get a glass substrate, sputtered aluminum film on one of them surface of glass substrate, photoetching and making form the lead-in wire electrode of static broach actuator behind the resist coating;
5) lower surface with monocrystalline silicon substrate is connected by silicon-glass anode linkage mode with the lead-in wire electrode place face of glass substrate;
6) at monocrystalline silicon substrate upper surface resist coating and make the figure of movable structure by lithography; adopt reactive ion etching process to etch away the passivation protection layer of the graphics field of movable structure then, utilizing silicon deep reaction ion etching technology etching to discharge movable structure.
Compared with prior art, the invention provides a kind of based on the bulk silicon micro mechanic processing technology, structure set, driving and displacement detecting are in one, silicon-base plane nano-scale localization platform in parallel with Three Degree Of Freedom, can realize real-time detection and control to each direction of motion displacement, thereby further improve the positioning accuracy of locating platform, and it is little to have physical dimension, cost of manufacture is low, but advantages such as positioning accuracy height and the capable monitoring in real time of contraposition shift-in.
Description of drawings
Fig. 1 is the structural representation of the 3-DOF silicon-base plane locating platform in parallel of the band displacement self-checking function among the embodiment;
Fig. 2 is the 3-DOF silicon-base plane locating platform partial structurtes in parallel schematic diagram of the band displacement self-checking function among the embodiment;
Fig. 3 is the 3-DOF silicon-base plane locating platform cross section structure in parallel schematic diagram of the band displacement self-checking function among the embodiment;
Fig. 4 is flexible support beam and the flexible hinge place partial structurtes schematic diagram of the 3-DOF silicon-base plane locating platform in parallel of the band displacement self-checking function among the embodiment;
Fig. 5 be the 3-DOF silicon-base plane of the band displacement self-checking function among embodiment locating platform in parallel the detection beam, detect the partial structurtes schematic diagram at pressure drag and static broach actuator place.
Fig. 6 is the schematic diagram of each step of preparation method of the 3-DOF silicon-base plane of the band displacement self-checking function among embodiment locating platform in parallel; Wherein: (a) be N-type (111) crystal face monocrystalline silicon substrate; (b) make stress sensitive resistance; (c) make stress sensitive resistance lead hole and lead-in wire; (d) the movable structure of monocrystalline silicon substrate lower surface etching and drive electrode cabling interconnect groove; (e) the glass substrate bonding face is made electrostatic actuator drive electrode and lead-in wire; (f) monocrystalline silicon substrate and glass substrate bonding; (g) the silicon chip upper surface discharges movable structure.
Among the figure, 1 is glass substrate, and 2 is monocrystalline silicon substrate, and 3 for detecting beam, the lead-in wire of 4 stress piezo-resistances and pad, 5 is the actuator drive electrode, and 6 is folded beam, and 7 is objective table, 8 static broach actuators, 9 is the flexible support beam, and 10 is flexible hinge, and 11 is the pressure-sensitive pressure drag of stress.
The specific embodiment
The present invention is described in detail below in conjunction with the drawings and specific embodiments.
Embodiment
Shown in Fig. 1～5, a kind of 3-DOF silicon-base plane with displacement self-checking function locating platform in parallel, comprise monocrystalline silicon substrate 2 and glass substrate 1, monocrystalline silicon substrate 2 is located at glass substrate 1 top, monocrystalline silicon substrate 2 is provided with objective table 7, static broach actuator 8, detect beam 3, folded beam 6, flexible support beam 9 and flexible hinge 10, but objective table 7 is positioned at central authorities and the three-degree-of-freedom motion of monocrystalline silicon substrate 2, objective table 7 is isosceles triangular structure, each drift angle place of isosceles triangular structure all connects flexible support beam 9 successively by flexible hinge 10, folded beam 6, static broach actuator 8 and detection beam 3 form y-type structure.Can realize that by the output of controlling three static broach actuators 8 article carrying platform 7 is along the translation of X and Y-direction and around the rotation of Z axle, and objective table 7 output displacements can realize real-time self-checking function by displacement transducer, thereby further improved the positioning accuracy of objective table 7, glass substrate 1 is provided with the actuator drive electrode 5 that is connected with static broach actuator 8.
Each detects and connects equal displacement detecting sensor on the beam 3, each displacement detecting sensor comprises two outer meeting resistances and two stress piezo-resistances 11 that are located on the detection beam 3, two outer meeting resistances and two stress piezo-resistances 11 are formed the half-bridge testing circuit, two stress piezo-resistances 11 adopt the mode of ion injection to be integrated in the upper surface that detects beam 3 two ends, and the lead-in wire of the pressure-sensitive electricity of stress and pad 4 are fixed on the upper surface of monocrystalline silicon substrate 2.
The preparation method of a kind of 3-DOF silicon-base plane for above-mentioned band displacement self-checking function locating platform in parallel, the schematic diagram when it carries out each step may further comprise the steps as shown in Figure 6:
The twin polishing monocrystalline silicon substrate of step 1, employing (111) crystal face shown in Fig. 6 (a), monocrystalline silicon substrate thickness is got 350 μ m, electrical resistivity range is got 1 Ω cm～12 Ω cm, by the mode of carrying out the injection of boron ion to this monocrystalline silicon substrate stress sensitive resistance is set, inject the inclination angle and get 7 °～12 °, the resistance value of stress sensitive resistance is 82～90 ohm, shown in Fig. 6 (b).
The fairlead of step 2, making stress sensitive resistance, the sputtered aluminum film forms lead-in wire and pad at the monocrystalline silicon substrate upper surface then, shown in Fig. 6 (c).
Claims (10)
1. one kind with the 3-DOF silicon-base plane of displacement self-checking function locating platform in parallel, it is characterized in that, comprise monocrystalline silicon substrate and glass substrate, described monocrystalline silicon substrate is located at the glass substrate top, monocrystalline silicon substrate is provided with objective table, the static broach actuator, detect beam, folded beam, flexible support beam and flexible hinge, but described objective table is positioned at central authorities and the three-degree-of-freedom motion of monocrystalline silicon substrate, objective table connects the flexible support beam successively by flexible hinge, folded beam, static broach actuator and detection beam, be integrated with displacement detecting sensor on the described detection beam, described glass substrate is provided with the actuator drive electrode that is connected with the static broach actuator.
2. a kind of 3-DOF silicon-base plane with the displacement self-checking function according to claim 1 locating platform in parallel, it is characterized in that, described objective table is isosceles triangular structure, and each drift angle place of isosceles triangular structure all connects flexible support beam, folded beam, static broach actuator successively and detects beam formation y-type structure by flexible hinge.
3. a kind of 3-DOF silicon-base plane with the displacement self-checking function according to claim 1 locating platform in parallel, it is characterized in that, described displacement detecting sensor comprises two outer meeting resistances and two stress piezo-resistances that are located on the detection beam, and described two outer meeting resistances and two stress piezo-resistances are formed the half-bridge testing circuits.
4. a kind of 3-DOF silicon-base plane with the displacement self-checking function according to claim 3 locating platform in parallel is characterized in that the mode that described two stress piezo-resistances adopt ion to inject is arranged on the upper surface that detects the beam two ends.
5. a kind of 3-DOF silicon-base plane with the displacement self-checking function according to claim 3 locating platform in parallel is characterized in that described two stress piezo-resistances are provided with lead-in wire and pad, and described lead-in wire and pad are fixed on the monocrystalline silicon substrate upper surface.
6. a kind of 3-DOF silicon-base plane with the displacement self-checking function according to claim 1 locating platform in parallel is characterized in that described monocrystalline silicon substrate adopts the monocrystalline silicon substrate of (111) crystal face.
7. a kind of 3-DOF silicon-base plane with the displacement self-checking function according to claim 1 locating platform in parallel, it is characterized in that the objective table on the described monocrystalline silicon substrate, static broach actuator, detection beam, folded beam, flexible support beam, flexible hinge and detecting sensor adopt bulk silicon technological integrated being processed to form on same monocrystalline silicon substrate.
8. a kind of 3-DOF silicon-base plane with the displacement self-checking function according to claim 1 locating platform in parallel is characterized in that described flexible hinge is the circular arc flexible hinge.
9. a kind of 3-DOF silicon-base plane with the displacement self-checking function according to claim 1 locating platform in parallel is characterized in that described static broach actuator is push-pull side direction translation static broach actuator.
10. the preparation method of the 3-DOF silicon-base plane of a band displacement self-checking function as claimed in claim 1 locating platform in parallel is characterized in that, may further comprise the steps:
1) the twin polishing monocrystalline silicon substrate of employing (111) crystal face, monocrystalline silicon substrate thickness is got 350 μ m, electrical resistivity range is got 1 Ω cm～12 Ω cm, by the mode of carrying out the injection of boron ion to this monocrystalline silicon substrate stress sensitive resistance is set, inject the inclination angle and get 7 °～12 °, the resistance value of stress sensitive resistance is 82～90 ohm;
2) fairlead of making stress sensitive resistance, the sputtered aluminum film forms lead-in wire and pad at the monocrystalline silicon substrate upper surface then;
3) monocrystalline silicon substrate lower surface resist coating and make the movable structural region of static broach actuator, folded beam, flexible support beam, objective table, detection beam by lithography and the electrostatic actuator lead-in wire electrode cabling band of position, utilize silicon deep reaction ion etching technology to etch described movable structural region and the cabling band of position then, etching depth is 300 μ m;
4) get a glass substrate, sputtered aluminum film on one of them surface of glass substrate, photoetching and making form the lead-in wire electrode of static broach actuator behind the resist coating;
5) lower surface with monocrystalline silicon substrate is connected by silicon-glass anode linkage mode with the lead-in wire electrode place face of glass substrate;
6) at monocrystalline silicon substrate upper surface resist coating and make the figure of movable structure by lithography; adopt reactive ion etching process to etch away the passivation protection layer of the graphics field of movable structure then, recycling silicon deep reaction ion etching technology etching discharges movable structure.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104016297A (en) * | 2014-06-20 | 2014-09-03 | 上海工程技术大学 | Three-DOF silicon-based nanoscale positioning platform and manufacturing method thereof |
| EP3230199A4 (en) * | 2014-12-10 | 2019-02-20 | Pavel D. Okulov | Micro electro-mechanical strain displacement sensor and usage monitoring system |
| CN110078014A (en) * | 2019-04-19 | 2019-08-02 | 西安交通大学 | The MEMS microgravity sensor chip with quasi- zero stiffness characteristic is preloaded based on electrostatic |
| CN113366936A (en) * | 2019-01-25 | 2021-09-07 | 迈康尼股份公司 | Electrical verification of electronic components |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6393913B1 (en) * | 2000-02-08 | 2002-05-28 | Sandia Corporation | Microelectromechanical dual-mass resonator structure |
| US20030183007A1 (en) * | 2001-02-21 | 2003-10-02 | Rainer Willig | Rotational speed sensor |
| US20040149035A1 (en) * | 2001-05-02 | 2004-08-05 | Cenk Acar | Non-resonant four degrees-of-freedom micromachined gyroscope |
| CN101241314A (en) * | 2008-03-11 | 2008-08-13 | 上海微电子装备有限公司 | 6 freedom degree precision positioning station capable of compensating Z-direction position |
| CN101372310A (en) * | 2008-07-09 | 2009-02-25 | 哈尔滨工业大学 | Nano-scale localization platform based on bulk silicon process and method for processing vertical sidewall surface piezoresistance thereof |
| CN101776851A (en) * | 2010-01-15 | 2010-07-14 | 天津大学 | Three DOF micro-positioning workbench for nano-imprint lithography system |
-
2012
- 2012-02-03 CN CN201210023814.8A patent/CN103241701B/en not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6393913B1 (en) * | 2000-02-08 | 2002-05-28 | Sandia Corporation | Microelectromechanical dual-mass resonator structure |
| US20030183007A1 (en) * | 2001-02-21 | 2003-10-02 | Rainer Willig | Rotational speed sensor |
| US20040149035A1 (en) * | 2001-05-02 | 2004-08-05 | Cenk Acar | Non-resonant four degrees-of-freedom micromachined gyroscope |
| CN101241314A (en) * | 2008-03-11 | 2008-08-13 | 上海微电子装备有限公司 | 6 freedom degree precision positioning station capable of compensating Z-direction position |
| CN101372310A (en) * | 2008-07-09 | 2009-02-25 | 哈尔滨工业大学 | Nano-scale localization platform based on bulk silicon process and method for processing vertical sidewall surface piezoresistance thereof |
| CN101776851A (en) * | 2010-01-15 | 2010-07-14 | 天津大学 | Three DOF micro-positioning workbench for nano-imprint lithography system |
Non-Patent Citations (2)
| Title |
|---|
| BOUDEWIJN R. DE JONG ET AL.: ""Design and Fabrication of a Planar Three-DOFs MEMS-Based Manipulator"", 《JOURNAL OF MICROELECTROMECHANICAL SYSTEMS》 * |
| 王家畴: ""硅基集成式微型平面纳米级定位系统的研究"", 《中国博士学位论文全文数据库》 * |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104016297A (en) * | 2014-06-20 | 2014-09-03 | 上海工程技术大学 | Three-DOF silicon-based nanoscale positioning platform and manufacturing method thereof |
| EP3230199A4 (en) * | 2014-12-10 | 2019-02-20 | Pavel D. Okulov | Micro electro-mechanical strain displacement sensor and usage monitoring system |
| US10663357B2 (en) | 2014-12-10 | 2020-05-26 | Paul D OKULOV | Micro electro-mechanical strain displacement sensor and usage monitoring system |
| US11714012B2 (en) | 2014-12-10 | 2023-08-01 | Ipr Innovative Products Resources, Inc. | Micro electro-mechanical strain displacement sensor and system for monitoring health and usage of a structure |
| CN113366936A (en) * | 2019-01-25 | 2021-09-07 | 迈康尼股份公司 | Electrical verification of electronic components |
| CN110078014A (en) * | 2019-04-19 | 2019-08-02 | 西安交通大学 | The MEMS microgravity sensor chip with quasi- zero stiffness characteristic is preloaded based on electrostatic |
| CN110078014B (en) * | 2019-04-19 | 2022-02-22 | 西安交通大学 | MEMS microgravity sensor chip with quasi-zero rigidity characteristic based on electrostatic preloading |
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