CN103232157B - 一种基板加工装置 - Google Patents

一种基板加工装置 Download PDF

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CN103232157B
CN103232157B CN201310173579.7A CN201310173579A CN103232157B CN 103232157 B CN103232157 B CN 103232157B CN 201310173579 A CN201310173579 A CN 201310173579A CN 103232157 B CN103232157 B CN 103232157B
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processing device
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substrate
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CN103232157A (zh
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贾胡平
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B33/00Severing cooled glass
    • C03B33/02Cutting or splitting sheet glass or ribbons; Apparatus or machines therefor
    • C03B33/023Cutting or splitting sheet glass or ribbons; Apparatus or machines therefor the sheet or ribbon being in a horizontal position
    • C03B33/03Glass cutting tables; Apparatus for transporting or handling sheet glass during the cutting or breaking operations
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B33/00Severing cooled glass
    • C03B33/02Cutting or splitting sheet glass or ribbons; Apparatus or machines therefor
    • C03B33/023Cutting or splitting sheet glass or ribbons; Apparatus or machines therefor the sheet or ribbon being in a horizontal position
    • C03B33/033Apparatus for opening score lines in glass sheets
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    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
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    • H01ELECTRIC ELEMENTS
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    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67092Apparatus for mechanical treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68721Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
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    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
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    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y02P40/50Glass production, e.g. reusing waste heat during processing or shaping
    • Y02P40/57Improving the yield, e-g- reduction of reject rates

Abstract

本发明公开了一种基板加工装置。其中,所述基板加工装置包括用于夹持基板的夹持组件及用于载置所述基板的支承组件,所述夹持组件与所述支承组件均具有驱动源。根据本发明的基板加工装置,所述夹持组件与所述支承组件均具有驱动源,由此,可以通过所述夹持组件与所述支承组件各自的驱动源,驱动所述夹持组件与所述支承组件同步运动,使得基板相对于支承组件静止,在加工过程中无需每切割一刀对位一次,能够节省加工时间。

Description

一种基板加工装置
技术领域
本发明属于液晶平板显示的制造技术的领域,尤其涉及一种基板加工装置。
背景技术
目前,液晶电视、液晶电脑等平板显示器越来越受到大众的欢迎。在平板显示器的制造产业的薄膜晶体管的制程(TFT process)中,需要对玻璃基板进行镭射切割等加工。传统的切割方式中,通过卡盘(Chuck)将基板(Substrate)或条带(Strip)夹持,并放置在无动力驱动的辊子(Roller)上。在该切割方式中,如图4所示,加工顺序大致为第一刀对齐(步骤S1)→第一刀切割(步骤S2)→第一刀回刀(步骤S3)→第二刀对齐(步骤S34)→第二刀切割(步骤S4)→第二刀回刀(步骤S5),依此重复。每切割一刀对位一次,以保证切割精度。然而,每切割一刀对位一次的方式,会耗费大量工时。
发明内容
本发明的目的在于,提供一种基板加工装置,其无需每切割一刀对位一次,能够节省加工时间。
本发明通过如下技术方案实现:一种基板加工装置,其中,所述基板加工装置包括用于夹持基板的夹持组件及用于载置所述基板的支承组件,所述夹持组件与所述支承组件均具有驱动源。
作为上述技术方案的进一步改进,所述夹持组件具有卡盘及驱动卡盘的第一电机。
作为上述技术方案的进一步改进,所述第一电机为线性伺服电机。
作为上述技术方案的进一步改进,所述支承组件具有承载所述基板的同步皮带传动机构及驱动所述同步皮带传动机构的第二电机。
作为上述技术方案的进一步改进,所述同步皮带传动机构包括传动轮及架设在所述传动轮上的同步皮带。
作为上述技术方案的进一步改进,所述第二电机为步进电机。
作为上述技术方案的进一步改进,所述基板加工装置还包括控制器,所述控制器用于所述夹持组件的驱动源和所述支承组件的驱动源,使得所述夹持组件与所述支承组件在加工过程中同步运动。
作为上述技术方案的进一步改进,所述基板为玻璃基板。
本发明的有益效果是:根据本发明的基板加工装置,所述基板加工装置包括用于夹持基板的夹持组件及用于载置所述基板的支承组件,且所述夹持组件与所述支承组件均具有驱动源,由此,可以通过所述夹持组件与所述支承组件各自的驱动源,驱动所述夹持组件与所述支承组件同步运动,使得基板相对于支承组件静止,在加工过程中仅需进行一次对位,无需每切割一刀对位一次,能够节省加工时间。
附图说明
图1是根据本发明的基板加工装置的一个具体实施例的结构示意图。
图2是图1的基板加工装置的电气结构示意框图。
图3是利用图1的基板加工装置进行的基板加工工艺的一部分的流程图。
图4是利用传统基板加工装置进行的基板加工工艺的一部分的流程图。
具体实施方式
以下结合附图对本发明的具体实施方式进行进一步的说明。
本发明的基板加工装置包括用于夹持基板100的夹持组件300及用于载置所述基板100的支承组件200,所述夹持组件300与所述支承组件200均具有驱动源。在本实施例中,其中,所述基板100例如可以为用于液晶电视的玻璃基板。
如图1和图2所示,所述夹持组件300具有卡盘302及驱动卡盘302的第一电机310。所述支承组件200具有承载所述基板100的同步皮带传动机构及驱动所述同步皮带传动机构的第二电机210。在进行切割等加工的初始,安装在机台上的加工工具102(例如加工刀具或激光镭射头等)与基板100上的加工位置对齐。
同步皮带传动机构包括传动轮202及架设在所述传动轮202上的同步皮带204。同步皮带204的宽度可以与基板100的宽度相当。传动轮202在图示实施例中可沿转动方向R旋转,带动基板100平移。且本实施例中,所述第一电机310为线性伺服电机(Linear Servo Motor),所述第二电机210为步进电机(SteppingMotor)。
此外,如图2所示,本实施例中,所述基板加工装置还可以包括控制器10。所述控制器10用于所述夹持组件300的驱动源(第一电机310)和所述支承组件200的驱动源(第二电机210),使得所述夹持组件300与所述支承组件200在加工过程中同步运动,从而保证基板100相对于支承组件200的同步皮带204的传动面保持静止。即,在第一电机310驱动夹持有基板100的卡盘302沿平移方向X运动时,传动轮202沿转动方向R同步旋转,基板100相对于支承组件200的同步皮带204的传动面保持静止。所述基板为玻璃基板。
本发明的基板加工装置采用夹持组件300与支承组件200同时具有驱动源的结构,卡盘302夹取基板100后随同步皮带204一起同步运行,基板100在同步皮带204上形成了相对静止,并且移动过程中降低了基板100的相对抖动以及移动偏差,提高了传送精度。例如,在本发明的一个具体实施例中,本发明的基板加工装置的传送精度误差达到±40um左右。
在利用本发明的基板加工装置进行切割等加工时,如图3所示,加工顺序可以大致为第一刀对齐(步骤S1)→第一刀切割(步骤S2)→第一刀回刀(步骤S3)→第二刀切割(步骤S4)→第二刀回刀(步骤S5),依此重复。与传统加工方式相比,无需每切割一刀对位一次,可省去第一刀加工完成之后的加工工具102与基板100上规定位置的对齐,直至加工结束。
如上所述,本发明的基板加工装置采用传送精度高的传送方式,在切割地鞥加工过程中,只需要进行一次对位,即可完成一块基板的切割动作,从而节省多次对位的时间,加快加工节奏,间接增加产能。
以上具体实施方式对本发明进行了详细的说明,但这些并非构成对本发明的限制。本发明的保护范围并不以上述实施方式为限,但凡本领域普通技术人员根据本发明所揭示内容所作的等效修饰或变化,皆应纳入权利要求书中记载的保护范围内。

Claims (7)

1.一种基板加工装置,其特征在于,所述基板加工装置包括用于夹持基板的夹持组件及用于载置所述基板的支承组件,所述夹持组件与所述支承组件均具有驱动源;所述基板加工装置还包括控制器,所述控制器用于所述夹持组件的驱动源和所述支承组件的驱动源,使得所述夹持组件与所述支承组件在加工过程中同步运动,基板相对于支承组件的传动面保持静止。
2.根据权利要求1所述的基板加工装置,其特征在于,所述夹持组件具有卡盘及驱动卡盘的第一电机。
3.根据权利要求2所述的基板加工装置,其特征在于,所述第一电机为线性伺服电机。
4.根据权利要求1所述的基板加工装置,其特征在于,所述支承组件具有承载所述基板的同步皮带传动机构及驱动所述同步皮带传动机构的第二电机。
5.根据权利要求4所述的基板加工装置,其特征在于,所述第二电机为步进电机。
6.根据权利要求4所述的基板加工装置,其特征在于,所述同步皮带传动机构包括传动轮及架设在所述传动轮上的同步皮带。
7.根据权利要求1所述的基板加工装置,其特征在于,所述基板为玻璃基板。
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