CN103227238A - Processing for producing monocrystalline silicon solar cell - Google Patents
Processing for producing monocrystalline silicon solar cell Download PDFInfo
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- CN103227238A CN103227238A CN2013101107919A CN201310110791A CN103227238A CN 103227238 A CN103227238 A CN 103227238A CN 2013101107919 A CN2013101107919 A CN 2013101107919A CN 201310110791 A CN201310110791 A CN 201310110791A CN 103227238 A CN103227238 A CN 103227238A
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- silicon
- monocrystalline silicon
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- electrode area
- electrode district
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- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 28
- 238000009792 diffusion process Methods 0.000 claims abstract description 41
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 39
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 24
- 239000010703 silicon Substances 0.000 claims abstract description 24
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 18
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 9
- 239000002184 metal Substances 0.000 claims abstract description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 4
- 239000001301 oxygen Substances 0.000 claims abstract description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 15
- 238000005516 engineering process Methods 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 230000008021 deposition Effects 0.000 claims description 7
- 239000012528 membrane Substances 0.000 claims description 6
- 238000002360 preparation method Methods 0.000 claims description 3
- 239000012535 impurity Substances 0.000 abstract description 13
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract description 7
- 229910052698 phosphorus Inorganic materials 0.000 abstract description 7
- 239000011574 phosphorus Substances 0.000 abstract description 7
- 239000010409 thin film Substances 0.000 abstract 1
- 210000004027 cell Anatomy 0.000 description 12
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 230000009467 reduction Effects 0.000 description 5
- 230000035755 proliferation Effects 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 238000007613 slurry method Methods 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 210000005056 cell body Anatomy 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010329 laser etching Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
A processing for producing a monocrystalline silicon solar cell comprises the steps as follows: a silicon oxide thin film containing phosphorus is deposited on the upper surface of a P type monocrystalline silicon piece, the deposited silicon piece is subjected to a first high temperature diffusion to form a PN junction; oxide layers outside an electrode area on the upper surface of the monocrystalline silicon piece are removed; an intrinsic noncrystalline silicon layer is deposited on the upper surface of the monocrystalline silicon piece; the monocrystalline silicon piece is placed in a wet oxygen environment for a second high temperature diffusion, so that phosphorus doped in an non-electrode area is diffused into the noncrystalline silicon layer, phosphorus in the oxide layer of the electrode area is further diffused to the electrode area to form heavy doping of the electrode area, and the silicon piece surfaces of the noncrystalline silicon layer and the non-electrode layer are oxidized simultaneously; silicon dioxide on the surface of the monocrystalline silicon piece is removed; a silicon nitride anti-reflecting layer is deposited on the surface of the monocrystalline silicon piece; and a metal electrode is prepared. According to the processing for producing the monocrystalline silicon solar cell, noncrystalline silicon is used for absorbing impurities in the non-electrode area, so that the doping concentration of the non-electrode area is reduced, the doping concentration difference between the electrode area and the non-electrode area is further increased, and the cell performance is improved.
Description
Technical field
The present invention relates to a kind of production technology of monocrystaline silicon solar cell.
Background technology
The selective doping solar cell is a kind of solar cell of effective low-cost high-efficiency.The design feature of selective doping solar cell is to carry out in the top electrode overlay area of solar cell the contact resistance of heavy doping reduction battery, simultaneously carry out light dope at non-electrode district, photo-generated carrier is compound in the spectral response of raising battery and the reduction battery.The method of carrying out the solar cell selective doping before the selective doping square mesh of existing solar cell mainly contains: two step diffusion methods, silk screen printing phosphorus slurry method, diffusion mask method etc.Wherein, two step diffusion methods are earlier electrode district heavily to be spread, and more whole emitter region are gently spread, and its advantage is that preparation is simple, still, because electrode district spreads the difficult control of the quadratic distribution of impurity earlier; Silk screen phosphorus slurry method is at part printing high concentration phosphorus slurry with silk screen, by its diffusion and volatilization, once diffusion just can make electrode district form heavy doping, other zones form light dope, but owing to utilized local phosphorus slurry as diffuse source, the inhomogeneities that must cause diffusion into the surface, this can reduce the efficient of battery.The diffusion mask method is exactly first light dope, carry out laser or photo etched mask again, and then electrode district carried out secondary heavy doping, this method is owing to carried out light dope earlier, reduced when electrode district carries out selective doping and the impurity concentration of substrate poor, can control the selective doping zone of battery preferably, but need be with the method for laser or photoetching, improve cost, reduced production efficiency.
Summary of the invention
The objective of the invention is to: overcome the defective of above-mentioned prior art, propose a kind of production technology of monocrystaline silicon solar cell.
In order to achieve the above object, the production technology of a kind of monocrystaline silicon solar cell that the present invention proposes comprises the steps:
Step 2, the silicon chip after the deposit is carried out the High temperature diffusion first time, make the P elements in the silica membrane diffuse into the p type single crystal silicon sheet, form PN junction;
Step 4, at monocrystalline silicon piece upper surface deposition of intrinsic amorphous silicon layer;
The silicon dioxide of step 6, removal monocrystalline silicon sheet surface;
Step 7, at monocrystalline silicon sheet surface deposit silicon nitride anti-reflecting layer;
Step 8, preparation metal electrode.
The present invention further improves and is:
1, the silicon oxide film thickness of deposit is about 0.06 micron in the step 1.
2, in the described step 4, the intrinsic amorphous silicon layer thickness of deposit is about 45nm.
3, in the step 2, the temperature of High temperature diffusion is 900 ℃ for the first time, and the time of High temperature diffusion is 5 minutes for the first time.
4, in the step 5, the temperature of High temperature diffusion is 900 ℃ for the second time, and the duration is 30 minutes.
5, in the step 5, the temperature of High temperature diffusion is 950 ℃ for the second time, and the duration is 20 minutes.
6, in the step 5, the temperature of High temperature diffusion is 1000 ℃ for the second time, and the duration is 5 minutes.
7, in the step 5, the temperature of High temperature diffusion is 1050 ℃ for the second time, and the duration is 4 minutes.
8, in the step 5, the temperature of High temperature diffusion is 1100 ℃ for the second time, and the duration is 2 minutes.
9, in the step 5, the temperature of High temperature diffusion is 1150 ℃ for the second time, and the duration is 1.5 minutes.
10, in the described step 3, adopt the silicon dioxide of the method reservation electrode zone of silk screen printing, utilize buffered hydrofluoric acid solution to get rid of other regional silicon dioxide on the silicon chip.
11, in the described step 6, adopt buffered hydrofluoric acid solution to remove the oxide layer of silicon chip surface.
What the present invention adopted is earlier full sheet heavy doping, back counter diffusion sensitive surface impurity, the doping impurity concentration of reduction sensitive surface, electrode district heavy doping simultaneously.As seen technology of the present invention is a step to finish the production efficiency height to the heavy doping in battery electrode district and the doping content reduction of non-electrode district; After the High temperature diffusion, the doping content of electrode district and non-electrode district further enlarges for the second time, improves battery performance; And absorb the P elements of non-electrode district by amorphous silicon layer, make that non-electrode district Impurity Distribution is even, battery performance is stable; And after the 6th step removal oxide layer, electrode district presents to a certain degree evagination, helps the location of subsequent electrode.
Description of drawings
The present invention is further illustrated below in conjunction with accompanying drawing.
Fig. 1 is production technology embodiment one a flow process schematic diagram of the present invention.
Embodiment
The present invention will be further described below in conjunction with the drawings and specific embodiments.
Be illustrated in figure 1 as the schematic flow sheet of the production technology of monocrystaline silicon solar cell of the present invention, concrete steps are as follows:
S1, be about 0.06 micron silica 1 at p type single crystal silicon sheet upper surface deposition thickness, silica membrane contains concentration and is about 1e18.5/cm
3P elements;
S2, the silicon chip after the deposit is carried out the High temperature diffusion first time, the temperature of High temperature diffusion is 900 ℃ for the first time, and the time of High temperature diffusion is 5 minutes for the first time, makes the P elements in the silica membrane diffuse into the p type single crystal silicon sheet, forms PN junction,
The silica 1 that the method for S3, employing silk screen printing keeps electrode zone utilizes buffered hydrofluoric acid solution to get rid of other regional silicon dioxide on the silicon chip;
S4, be about the intrinsic amorphous silicon layer 2 of 45nm at monocrystalline silicon piece upper surface deposition thickness;
S5, place the wet oxygen environment to carry out the High temperature diffusion second time monocrystalline silicon piece, 4, in the step 5, the temperature of High temperature diffusion is 900 ℃ for the second time, duration is 30 minutes, the P elements that non-electrode district is mixed diffuses into amorphous silicon layer, P elements in the electrode district oxide layer is further to the electrode district diffusion, and a step is finished the reduction of non-electrode district impurity concentration and the heavy doping of electrode district, and the silicon chip surface of amorphous silicon layer and non-electrode district is oxidized to silica 1 simultaneously;
S6, employing buffered hydrofluoric acid solution are removed the silicon dioxide of silicon chip surface;
S7, at monocrystalline silicon sheet surface deposit silicon nitride anti-reflecting layer 3;
S8, fire metal negative electrode 4, fire the positively charged metal utmost point 5 at the cell backside electrode district in the battery front side electrode district.
Embodiment two
The step of present embodiment is identical with embodiment one, and difference is the technological parameter of High temperature diffusion for the second time, and in the present embodiment, the technological temperature of High temperature diffusion is 950 ℃ for the second time, and the duration is 20 minutes.
Embodiment three
The step of present embodiment is identical with embodiment one, and difference is the technological parameter of High temperature diffusion for the second time, and in the present embodiment, the technological temperature of High temperature diffusion is 1000 ℃ for the second time, and the duration is 5 minutes.
Embodiment four
The step of present embodiment is identical with embodiment one, and difference is the technological parameter of High temperature diffusion for the second time, and in the present embodiment, the technological temperature of High temperature diffusion is 1050 ℃ for the second time, and the duration is 4 minutes.
Embodiment five
The step of present embodiment is identical with embodiment one, and difference is the technological parameter of High temperature diffusion for the second time, and in the present embodiment, the technological temperature of High temperature diffusion is 1100 ℃ for the second time, and the duration is 2 minutes.
Embodiment six
The step of present embodiment is identical with embodiment one, and difference is the technological parameter of High temperature diffusion for the second time, and in the present embodiment, the technological temperature of High temperature diffusion is 1150 ℃ for the second time, and the duration is 1.5 minutes.
After above-mentioned six embodiment are carried out emulation, through finding that relatively along with the rising of the High temperature diffusion second time, the PN junction of battery is in continuous intensification.The impurity concentration on the surface of battery increases afterwards earlier and reduces, but the impurity concentration of electrode district progressively increases along with the increase of temperature.The heavy doping impurity of electrode district mainly spreads in cell body, and horizontal proliferation is less, and this is absorbed by amorphous silicon layer with relevant at battery surface deposition of intrinsic amorphous silicon layer, too much horizontal proliferation impurity.Amorphous silicon layer is used in this explanation can play restriction heavily doped region impurity horizontal proliferation effect.The impurity concentration of lightly doped region is more approaching, and lower diffusion temperature can form shallow junction effectively, improves battery shortwave spectral response.
In addition to the implementation, the present invention can also have other execution modes.All employings are equal to the technical scheme of replacement or equivalent transformation formation, all drop on the protection range of requirement of the present invention.
Claims (3)
1. the production technology of a monocrystaline silicon solar cell comprises the steps:
Step 1, at p type single crystal silicon sheet upper surface deposition silicon dioxide film, described silica membrane contains concentration and is about 1e18.5/cm
3P elements;
Step 2, the silicon chip after the deposit is carried out the High temperature diffusion first time, make the P elements in the silica membrane diffuse into the p type single crystal silicon sheet, form PN junction;
Step 3, remove the oxide layer beyond the monocrystalline silicon piece upper surface electrode district;
Step 4, at monocrystalline silicon piece upper surface deposition of intrinsic amorphous silicon layer;
Step 5, place the wet oxygen environment to carry out the High temperature diffusion second time monocrystalline silicon piece, the P elements that non-electrode district is mixed diffuses into amorphous silicon layer, P elements in the electrode district oxide layer further spreads to electrode district, form the heavy doping of electrode district, the silicon chip surface of amorphous silicon layer and non-electrode district is oxidized simultaneously;
The silicon dioxide of step 6, removal monocrystalline silicon sheet surface;
Step 7, at monocrystalline silicon sheet surface deposit silicon nitride anti-reflecting layer;
Step 8, preparation metal electrode.
2. the production technology of monocrystaline silicon solar cell according to claim 1, it is characterized in that: the silicon oxide film thickness of deposit in the step 1 is about 0.06 micron.
3. the production technology of monocrystaline silicon solar cell according to claim 1, it is characterized in that: in the described step 4, the intrinsic amorphous silicon layer thickness of deposit is about 45nm.
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| CN201310110791.9A CN103227238B (en) | 2013-04-01 | 2013-04-01 | A kind of production technology of monocrystaline silicon solar cell |
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| CN201310110791.9A CN103227238B (en) | 2013-04-01 | 2013-04-01 | A kind of production technology of monocrystaline silicon solar cell |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62162325A (en) * | 1986-01-13 | 1987-07-18 | Sanyo Electric Co Ltd | Manufacture of semiconductor device |
| CN101800266A (en) * | 2010-03-12 | 2010-08-11 | 上海太阳能电池研究与发展中心 | Preparation method of selective emitting electrode crystal silicon solar battery |
| KR20110020061A (en) * | 2009-08-21 | 2011-03-02 | 주식회사 효성 | Method of preparing selective emitter of solar cell and method of preparing solar cell |
| CN102945892A (en) * | 2012-11-07 | 2013-02-27 | 南通大学 | Method for manufacturing solar cell |
| CN102956748A (en) * | 2012-11-12 | 2013-03-06 | 国电光伏(江苏)有限公司 | Diffusion method for one-step formation of selective emitter of solar cell |
-
2013
- 2013-04-01 CN CN201310110791.9A patent/CN103227238B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62162325A (en) * | 1986-01-13 | 1987-07-18 | Sanyo Electric Co Ltd | Manufacture of semiconductor device |
| KR20110020061A (en) * | 2009-08-21 | 2011-03-02 | 주식회사 효성 | Method of preparing selective emitter of solar cell and method of preparing solar cell |
| CN101800266A (en) * | 2010-03-12 | 2010-08-11 | 上海太阳能电池研究与发展中心 | Preparation method of selective emitting electrode crystal silicon solar battery |
| CN102945892A (en) * | 2012-11-07 | 2013-02-27 | 南通大学 | Method for manufacturing solar cell |
| CN102956748A (en) * | 2012-11-12 | 2013-03-06 | 国电光伏(江苏)有限公司 | Diffusion method for one-step formation of selective emitter of solar cell |
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| CN103227238B (en) | 2015-11-18 |
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Inventor after: Lin Zhuowei Inventor after: Lin Zhuowei Liao Weicheng Inventor before: Liao Weicheng |
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Effective date of registration: 20151008 Address after: 362699 No. 40, ring road, Peach Town, Yongchun County, Fujian Applicant after: Lin Zhuowei Address before: Anxi County of Quanzhou City, Fujian province 362432 Shang Qing Xiang Han Qing Cun Qing Mei Street No. 57 Applicant before: Liao Weicheng |
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Effective date of registration: 20191104 Address after: 314100 room 107, building 3, No.118, Kangbao Road, ganyao Town, Jiashan County, Jiaxing City, Zhejiang Province Patentee after: Jiaxing Junhong Optical Co., Ltd Address before: 362699 No. 40, ring road, Peach Town, Yongchun County, Fujian Patentee before: Lin Zhuowei |
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