CN103221568B - Magnetic recording non-retentive alloy, sputtering target material and magnetic recording media - Google Patents
Magnetic recording non-retentive alloy, sputtering target material and magnetic recording media Download PDFInfo
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- CN103221568B CN103221568B CN201180051301.1A CN201180051301A CN103221568B CN 103221568 B CN103221568 B CN 103221568B CN 201180051301 A CN201180051301 A CN 201180051301A CN 103221568 B CN103221568 B CN 103221568B
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- 230000005291 magnetic effect Effects 0.000 title claims abstract description 63
- 229910045601 alloy Inorganic materials 0.000 title claims abstract description 40
- 239000000956 alloy Substances 0.000 title claims abstract description 40
- 238000005477 sputtering target Methods 0.000 title claims abstract description 16
- 239000013077 target material Substances 0.000 title claims abstract description 16
- 229910052802 copper Inorganic materials 0.000 claims abstract description 11
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 9
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 8
- 229910052758 niobium Inorganic materials 0.000 claims abstract description 8
- 229910052720 vanadium Inorganic materials 0.000 claims abstract description 8
- 229910052726 zirconium Inorganic materials 0.000 claims abstract description 8
- 229910052748 manganese Inorganic materials 0.000 claims abstract description 7
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 7
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 7
- 239000012535 impurity Substances 0.000 claims abstract description 5
- 229910052735 hafnium Inorganic materials 0.000 claims description 6
- 229910052715 tantalum Inorganic materials 0.000 claims description 6
- 229910052721 tungsten Inorganic materials 0.000 claims description 6
- 230000004907 flux Effects 0.000 abstract description 10
- 238000005260 corrosion Methods 0.000 abstract description 5
- 230000007797 corrosion Effects 0.000 abstract description 5
- 238000005280 amorphization Methods 0.000 description 17
- 238000011156 evaluation Methods 0.000 description 15
- 230000003628 erosive effect Effects 0.000 description 13
- 239000010949 copper Substances 0.000 description 11
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 11
- 238000002425 crystallisation Methods 0.000 description 7
- 230000008025 crystallization Effects 0.000 description 7
- 230000005294 ferromagnetic effect Effects 0.000 description 7
- 238000012360 testing method Methods 0.000 description 7
- 229910000531 Co alloy Inorganic materials 0.000 description 6
- 208000002173 dizziness Diseases 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 235000014347 soups Nutrition 0.000 description 6
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- 239000002184 metal Substances 0.000 description 5
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- 238000000034 method Methods 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 239000007864 aqueous solution Substances 0.000 description 3
- 239000002178 crystalline material Substances 0.000 description 3
- 230000006837 decompression Effects 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
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- 239000000203 mixture Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000006253 efflorescence Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- ZZUFCTLCJUWOSV-UHFFFAOYSA-N furosemide Chemical compound C1=C(Cl)C(S(=O)(=O)N)=CC(C(O)=O)=C1NCC1=CC=CO1 ZZUFCTLCJUWOSV-UHFFFAOYSA-N 0.000 description 2
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- 239000007788 liquid Substances 0.000 description 2
- 239000005300 metallic glass Substances 0.000 description 2
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- 238000010791 quenching Methods 0.000 description 2
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- 239000011780 sodium chloride Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
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Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/64—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
- G11B5/66—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent the record carriers consisting of several layers
- G11B5/667—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent the record carriers consisting of several layers including a soft magnetic layer
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/11—Making amorphous alloys
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C33/00—Making ferrous alloys
- C22C33/003—Making ferrous alloys making amorphous alloys
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C45/00—Amorphous alloys
- C22C45/02—Amorphous alloys with iron as the major constituent
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C45/00—Amorphous alloys
- C22C45/04—Amorphous alloys with nickel or cobalt as the major constituent
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/18—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by cathode sputtering
- H01F41/183—Sputtering targets therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
- H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
- H01F10/12—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys
- H01F10/16—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys containing cobalt
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physical Vapour Deposition (AREA)
- Magnetic Record Carriers (AREA)
- Thin Magnetic Films (AREA)
- Powder Metallurgy (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
Abstract
The invention provides the HAMR medium non-retentive alloy of saturation magnetic flux density, amorphism, crystallized temperature and excellent corrosion resistance, its sputtering target material and magnetic recording media.This alloy is in at%, comprise Fe:0 ~ 70%, (A) 5 ~ 20% be selected from Ti, Zr, and the one kind or two or more element in Hf, (B) 0 ~ 30% be selected from Cr, Mo, and the one kind or two or more element in W, (C) 0 ~ 30% be selected from V, Nb, and the one kind or two or more element in Ta, (D) a kind or 2 kinds of elements being selected from Ni and Mn of 0 ~ 30%, (E) a kind or 2 kinds of elements being selected from Al and Cu of 0 ~ 5%, and (F) 0 ~ 10% be selected from Si, Ge, P, B, and the one kind or two or more element in C, remaining part contains Co and inevitable impurity.
Description
Association request cross-referenced
The application advocates the right of priority based on No. 2010-240184, the Japanese patent application of application on October 26th, 2010 and No. 2011-92631, the Japanese patent application of application on April 19th, 2011, utilizes its whole disclosure with reference to including in this specification sheets.
Technical field
The sputtering target material and the magnetic recording media that the present invention relates to the Co system magnetic recording non-retentive alloy for using as the soft magnetic underlayer (SUL layer) in hard disk drive HAMR medium and employ this alloy.
Background technology
In recent years, the progress of Magnetographic Technology is fairly obvious, in order to realize the high capacity of driving mechanism, among the high record densityization of magnetic recording media is advancing, studying the HAMR mode that can realize high record density compared with in the past universal perpendicular magnetic recording medium further.
HAMR mode is the mode of record data utilizing LASER HEATING magnetic recording media while.When the densification of magnetic recording media advances, the problem of the thermal fluctuation that the data of magnetic recording disappear because of the impact of the heat of surrounding will become obvious.For avoiding the problem of this thermal fluctuation, need the coercive force improving magneticsubstance used in recording medium.But, if coercive force is too high, will record.The mode solving this problem is HAMR mode.
On the other hand, when adding thermal recording media, coercive force will decline, thus can record, and when after recording during medium cooling, coercive force can uprise again, therefore grow in thermal fluctuation.As the magnetic recording media of hot supplementary mode, such as, studied the magnetic recording media shown in Japanese Unexamined Patent Publication 2010-182386 publication (patent documentation 1).Disclosed in this patent documentation 1, amorphous is required for soft ferromagnetic layer, and hot supplementary mode is described above, recording medium be heated.Thus, for the soft ferromagnetic layer alloy shown in patent documentation 1, also can not crystallization, sufficiently high crystallized temperature when heating even if require.But according to Japanese Unexamined Patent Publication 2001-110044 publication (patent documentation 2), the crystallized temperature of the soft ferromagnetic layer shown in patent documentation 1 is about 400 DEG C (670K), therefore there is the problem that crystallization occurs.
In addition, in this strong work " ア モ Le Off ア ス Jin Shu Ji Foundation (basis of amorphous metal) " OHM company, 1982 of increasing, under composition disclosed in P94 (non-patent literature 1), demonstrate the crystallized temperature of about 800K, but owing to employing the semi-metal of Si, Ge, P, B, C and so on, have problems in erosion resistance time therefore in for soft ferromagnetic layer.In addition, with regard to nonmagnetic alloy, as shown in non-patent literature 2, also introduced the alloy of the crystallized temperature demonstrated more than 800K, but in soft magnetic film purposes, require that there is magnetic, therefore cannot be suitable for.
Prior art document
Patent documentation
Patent documentation 1: Japanese Unexamined Patent Publication 2010-182386 publication
Patent documentation 2: Japanese Unexamined Patent Publication 2001-110044 publication
Non-patent literature
Non-patent literature 1: increase this strong work " ア モ Le Off ア ス Jin Shu Ji Foundation (basis of amorphous metal) " OHM company, 1982, P94
Non-patent literature 2:OHJE, WOOLLAMJA, AYLESWORTHKD, SELLMYERDJ, POUCHJJ, JApplPhys., Vol.60, No.12PP.4271 ~ 4286,1986
The content of invention
As mentioned above, the soft ferromagnetic layer for the alloy in patent documentation 1 requires amorphous, but recording medium will be heated due to hot supplementary mode, with regard to the soft ferromagnetic layer shown in patent documentation 1, therefore there is the problem that crystallization occurs.In addition, if form disclosed in non-patent literature 1, then demonstrate the crystallized temperature of about 800K, but owing to employing the semi-metal of Si, Ge, P, B, C and so on, have problems in erosion resistance time therefore in for soft ferromagnetic layer.
The present inventor etc. this time obtain following opinion, that is, in Co alloy, the interpolation of the decrystallized promotion element that (1) utilizes Zr, Hf and/or Ti such can guarantee amorphism; (2) utilize the interpolation of V, Nb, Ta, Cr, Mo and/or W can realize high crystallized temperature, and the raising of amorphism can be contributed to; (3) interpolation of Ni and/or Mn is utilized to adjust saturation magnetic flux density; (4) interpolation of Al and/or Cu is utilized can to realize the raising of erosion resistance; (5) utilize the interpolation of Si, Ge, P, B and/or C can realize the improvement of amorphism, thus the magnetic recording non-retentive alloy that can realize excellent characteristic can be provided.
So, the object of the invention is to, the HAMR medium non-retentive alloy of saturation magnetic flux density, amorphism, crystallized temperature and excellent corrosion resistance, the sputtering target material employing it and magnetic recording media are provided.
According to a mode of the present invention, provide a kind of magnetic recording non-retentive alloy, it comprises in at%:
Fe：0～70％、
(A) 5 ~ 20% be selected from one kind or two or more element in Ti, Zr and Hf,
(B) 0 ~ 30% be selected from one kind or two or more element in Cr, Mo and W,
(C) 0 ~ 30% be selected from one kind or two or more element in V, Nb and Ta,
(D) 0 ~ 30% be selected from Ni and Mn a kind or 2 kinds of elements,
(E) 0 ~ 5% be selected from Al and Cu a kind or 2 kinds of elements and
(F) the one kind or two or more element be selected from Si, Ge, P, B and C of 0 ~ 10%,
Remaining part contains Co and inevitable impurity.
According to another mode of the present invention, provide the sputtering target material made with magnetic recording non-retentive alloy as above.
According to another mode of the present invention, provide the magnetic recording media possessed with the soft magnetic film of magnetic recording non-retentive alloy making as above.
Embodiment
Below the present invention is specifically described.As long as no expressing especially, in this specification sheets, " % " just refers to at%.
Magnetic recording non-retentive alloy of the present invention comprises Fe:0 ~ 70% in at%, (A) 5 ~ 20% be selected from Ti, Zr, and the one kind or two or more element in Hf, (B) 0 ~ 30% be selected from Cr, Mo, and the one kind or two or more element in W, (C) 0 ~ 30% be selected from V, Nb, and the one kind or two or more element in Ta, (D) a kind or 2 kinds of elements being selected from Ni and Mn of 0 ~ 30%, (E) a kind or 2 kinds of elements being selected from Al and Cu of 0 ~ 5%, and (F) 0 ~ 10% be selected from Si, Ge, P, B, and the one kind or two or more element in C, remaining part contains Co and inevitable impurity, preferably substantially be made up of these elements, more preferably be only made up of these elements.
Alloy of the present invention contains 0 ~ 70%, the Fe of preferably 20 ~ 70%, more preferably 30 ~ 50%.Fe is the element for obtaining soft magnetic material, if but more than 70%, then erosion resistance is deteriorated.
Alloy of the present invention contains 5 ~ 20%, one kind or two or more (A) group element be selected from Ti, Zr and Hf of preferably 6 ~ 15%, more preferably 9 ~ 14%.Ti, Zr and Hf are the elements for guaranteeing decrystallized (amorphous voltinism) in Co system alloy, if the total content of these elements is 5 ~ 20%, then can realize amorphization fully.
According to preferred mode of the present invention, alloy also can containing one kind or two or more (B) group element be selected from Cr, Mo and W of 5 ~ 30%, preferably 10 ~ 25%.Cr, Mo and W are for realizing the element of high crystallized temperature in Co alloy, if the one kind or two or more total content of this element is 5 ~ 30%, then can realizes this effect fully, and contribute to amorphization.
According to preferred mode of the present invention, also can by (A) group element and (B) group element and be set to 10 ~ 35%.If within the scope of this, then can contribute to amorphization, and effectively can prevent the reduction of magnetic.
According to preferred mode of the present invention, alloy also can containing less than 30%, one kind or two or more (C) group element be selected from V, Nb and Ta of preferably less than 20%, more preferably less than 10%.V, Nb and Ta are for improving erosion resistance significantly and promoting the element of amorphization in Co alloy, particularly can realize high corrosion resistance and high crystallized temperature when organizing compound is added with (B).If the total content of these elements is less than 30%, then contribute to amorphization.
According to preferred mode of the present invention, alloy also can containing less than 30%, a kind or 2 kinds of (D) group elements being selected from Ni and Mn of preferably 20%, more preferably 10%.Ni and Mn is the element for adjusting saturation magnetic flux density in Co alloy, if the total content of these elements is less than 30%, then can obtain excellent magnetic.
According to preferred mode of the present invention, alloy also can containing a kind or 2 kinds of (E) group elements being selected from Al and Cu of less than 5%.Al and Cu is the element for improving erosion resistance in Co alloy, if the total content of these elements is less than 5%, then contributes to amorphization.
According to preferred mode of the present invention, alloy also can containing a kind or 2 kinds of (F) group elements being selected from Si, Ge, P, B and C of less than 10%.Si, Ge, P, B and C are the elements improving amorphism in Co alloy, if the total content of these elements is less than 10%, then contribute to amorphization.
Embodiment
Below, embodiment is utilized to be specifically described alloy of the present invention.
As a rule, the film of perpendicular magnetic recording medium above can obtain in glass substrate etc. with the sputtering target material of its composition identical component, film forming by sputtering.Here to utilizing the film of spatter film forming to carry out chilling.Different with it, as test materials in the present embodiment, employ the chilling strip made with the liquid quench device of mono-roller type.Come thus to utilize easily in liquid quench strip evaluation reality and utilize sputtering to carry out the impact on each characteristic caused by composition of the film of chilling film forming.
the manufacturing conditions of chilling strip
The raw material 30g being grouped into weighing with the one-tenth shown in table 1 and table 2 is carried out arc-melting in the water-cooled copper mold of diameter about 10 × 40mm in decompression Ar, makes the fusing mother metal of chilling strip.The manufacturing conditions of chilling strip is, with single roller mode, this fusing mother metal is placed in the silica tube of diameter 15mm, soup nozzle diameter will be gone out and be set to 1mm, and carry out soup with the gap 0.3mm going out soup nozzle with atmosphere pressure 61kPa, spraying pressure reduction 69kPa, the rotating speed 3000rpm of copper roller (diameter 300mm), copper roller.Go out after soup temperature is set to just burning of each fusing mother metal.Using the chilling strip that so makes as test materials, have rated following project.
the evaluation of the saturation magnetic flux density of chilling strip
Go out the saturation magnetic flux density of chilling strip with the applying magnetic field measuring of 1200kA/m in VSM device (vibration sample type magnetometer).Be about 15mg for the weight of test materials, for more than 0.3T and the sample being less than the saturation magnetic flux density of 0.8T is set to zero, the sample for more than 0.8T is set to ◎.For the sample being less than 0.3% be set to ×.
the structure of chilling strip
As a rule, when measuring the X-ray diffractogram of non-crystalline material, can't see diffraction peak, is the distinctive dizzy figure of amorphous.In addition, when not completely amorphous, although can diffraction peak be seen, however compared with crystalline material peak height step-down, and also can see dizzy figure.So non-crystalline evaluation that utilized following method to carry out.
non-crystalline evaluation
As non-crystalline evaluation, attach for test materials with double sticky tape on a glass, utilize X-ray diffraction device to obtain diffractogram.Now, attach for test materials in the mode of the copper roller contact surface making mensuration face be chilling strip.X-ray source is Cu-alpha-ray, measures with the sweep velocity of 4 °/min.Be set to zero by what can confirm dizzy figure in this diffractogram, by can't see completely being set to of dizzy figure ×, carried out non-crystalline evaluation.
the crystallized temperature of chilling strip
As a rule, there is crystallization along with heating in non-crystalline material, and the temperature that crystallization occurs is called crystallized temperature.In addition, also thermopositive reaction can be caused when crystallization.Crystallized temperature evaluates along with the temperature of crystallization heat release by measuring.So utilize following method evaluation crystallized temperature.Differential Scanning Calorimetry is utilized to measure (DSC) at rate of heating 0.67Ks
-1condition under investigate.For more than 773K and the sample being less than the crystallized temperature of 873 is set to zero, the crystallized temperature for more than 873K is set to ◎, and the sample for the crystallized temperature being less than 773K is set to ×.
the erosion resistance evaluation (NaCl) of chilling strip
The sample obtained to attach chilling strip with double sticky tape on glass particle, implement salt spray testing (carrying out 16 hours with the 5%NaCl aqueous solution at 35 DEG C), in this evaluation, by do not see get rusty be set to zero, by see get rusty be set to ×.
erosion resistance (the HNO of chilling strip
3
)
What weigh 50mg supplies test materials, drips the 3at%HNO of 10ml
3after the aqueous solution, after at room temperature placing 1hr, analyze to 3%HNO
3co stripping quantity in the aqueous solution.What Co stripping quantity is less than 500ppm is set to ◎, by more than 500 and be less than 1000ppm be set to zero, by being set to of more than 1000ppm ×.
And, the Zr that one-tenth due to table 1 is grouped into the such as No.9 of middle record is 10%, W is 5%, Mo is 5%, and therefore (Co-30Fe) is 100%-20%, namely 80%, by this 80% be set to 100 time, then Co is (100-30), Fe is the ratio of 30.Namely mean, Co is 56%, Fe is 24%.
Table 1
Sample No.33 shown in table 1 due to the content of (B) group element low, therefore crystallized temperature is low.Sample No.34 due to the content of (B) group element high, therefore saturation magnetic flux density is low, and crystallized temperature is low.Sample No.35 due to the total amount of (B) group element low, therefore crystallized temperature is low.Sample No.36 is high due to the total amount of (B) group element, so there is no amorphization, and crystallized temperature is low.Sample No.37 is not owing to having (A) group element, and therefore amorphism is poor.
Sample No.38 due to the content of (A) group element low, therefore amorphism is poor.Sample No.39 due to the content of (A) group element high, therefore amorphism is not enough, and due to Fe content high, therefore erosion resistance is not enough.Sample No.40 due to Fe content high, therefore erosion resistance is not enough.Sample No.41 due to the content of (A) group element low, therefore the total amount of (A) group element and (B) group element is low, so amorphism is poor.Sample No.42 due to the total amount of (A) group element and (B) group element high, therefore magnetic is low, and amorphism is not enough.
The content of (D) group element of sample No.43 is high, magnetic difference.Sample No.44 is owing to containing as semimetallic B, Si element, and therefore erosion resistance is not enough.Sample No.45 due to the content of (B) group element low, and the total amount of (A) group element and (B) group element is low, and therefore amorphism is not enough.Sample No.46 owing to not containing Co and Fe, and not containing (D) group element, is therefore non magnetic.Different with it, sample No.1 ~ 32 are owing to all meeting condition of the present invention, and therefore known saturation magnetic flux density, amorphism are excellent, and crystallized temperature is high, and excellent corrosion resistance.
Except above-mentioned example, also other sample is shown in table 2.
Table 2
Sample No.26 is high due to Al content, so there is no amorphization.Sample No.27 is high due to Cu content, so there is no amorphization.Sample No.28 is high due to C content, so there is no amorphization.Sample No.29 is high due to the total content of B, Si, P, so there is no amorphization.Sample No.30 due to Ta content high, and Al content is high, so there is no amorphization.Sample No.31 due to V content high, and Cu content is high, so there is no amorphization.Sample No.32 due to Nb content high, and C content is high, so there is no amorphization.Sample No.33 is high due to P content, so there is no amorphization.Sample No.34 is high due to Ge content, so there is no amorphization.
Below, the manufacture method of sputtering target material is provided.12 kinds of one-tenth shown in sample No.1, No.3, No.4, No.5, No.8, No.13, No.18, No.23, No.27, No.32 of table 1 and sample No.33, No.36 of table 1 are grouped into, weigh melt raw material, carry out induction heating fusing in the refractory body crucible of decompression Ar gas atmosphere after, from the nozzle of the diameter 8mm of crucible bottom, go out soup, utilize Ar gas to carry out efflorescence.Using this gas Atomized powders as raw material, in the tank of the SC of degassed loading external diameter 220mm, internal diameter 210mm, long 200mm.Vacuum arrival degree time degassed is set to about 1.3 × 10-2pa.After above-mentioned powder filling base is heated to 1150 DEG C, loads in the contained type container of diameter 230mm, utilize the press molding of 500MPa.The body that is solidified into that above-mentioned method will be utilized to make utilizes Linear cut, machined into, plane lapping, be processed as diameter 180mm, thick 7mm discoid, as sputtering target material.
Use sputtering target material is grouped into these 12 kinds of one-tenth, forms sputtered film on the glass substrate.For X-ray diffractogram, sample No.1, No.3, No.4, No.5, No.8, No.13, No.18, No.23, No.27, No.32 can see dizzy figure, and sample No.33, No.36 see crystal peak.In addition, the mensuration of crystallized temperature has been carried out in the same manner as chilling strip, consequently, the crystallized temperature of sample No.1, No.3, No.4, No.5, No.8, No.13, No.18, No.23, No.27, No.32, all up to more than 773K, demonstrates the low temperature to being less than 773K in sample No.33, No.36.
Although do not provide erosion resistance in table, however be with the ◎ come to the same thing utilizing the evaluation of chilling strip, zero, ×.Carried out the mensuration of magnetic properties for magnetic properties is also identical with chilling strip, consequently with utilize the evaluation of chilling strip the ◎ come to the same thing, zero, ×.If to summarizing above, then confirm to utilize the result of chilling strip evaluation with use the sputtered film of sputtering target material film forming be evaluated as equal tendency.
In addition, 13 kinds of one-tenth shown in sample No.1, No.3, No.5, No.7, No.11, No.15, No.18, No.24, No.25 of table 2 and sample No.26, No.28, No.29, No.33 of table 2 are grouped into, weigh melt raw material, carry out induction heating fusing in the refractory body crucible of decompression Ar gas atmosphere after, from the nozzle of the diameter 8mm of crucible bottom, go out soup, utilize Ar gas to carry out efflorescence.Using this gas Atomized powders as raw material, in the tank of the SC of degassed loading external diameter 220mm, internal diameter 210mm, long 200mm.Vacuum arrival degree time degassed is set to about 1.3 × 10-2pa.After above-mentioned powder filling baslled iron is heated to 1000 DEG C, loads in the contained type container of diameter 230mm, utilize the press molding of 500MPa.Make utilizing above-mentioned method be solidified into body utilize Linear cut, machined into, plane lapping be processed as diameter 165mm, thick 6mm discoid, as sputtering target material.
Use sputtering target material is grouped into these 13 kinds of one-tenth, forms sputtered film on the glass substrate.For X-ray diffractogram, sample No.1, No.3, No.5, No.7, No.11, No.15, No.18, No.24, No.25 person can see dizzy figure, see crystal peak in sample No.26, No.28, No.29, No.33.In addition, carried out the mensuration of crystallized temperature identically with chilling strip, consequently, the crystallized temperature of sample No.1, No.3, No.5, No.7, No.11, No.15, No.18, No.24, No.25, all up to more than 773K, demonstrates the low temperature to being less than 773K in sample No.33, No.36.
Although do not provide erosion resistance in table, however be with the ◎ come to the same thing utilizing the evaluation of chilling strip, zero, ×.Carried out the mensuration of magnetic properties for magnetic properties is also identical with chilling strip, consequently with utilize the evaluation of chilling strip the ◎ come to the same thing, zero, ×.If to summarizing above, then confirm to utilize the result of chilling strip evaluation with use the sputtered film of sputtering target material film forming be evaluated as equal tendency.
As mentioned above, according to the present invention, can provide and guarantee the high and HAMR medium non-retentive alloy of excellent corrosion resistance of saturation magnetic flux density, amorphism (amorphism), crystallized temperature and the sputtering target material utilizing this alloy to make and magnetic recording media especially.
Claims (14)
1. a magnetic recording non-retentive alloy, is characterized in that,
In at%, comprise:
Fe：0～70％、
(A) 5 ~ 20% be selected from one kind or two or more element in Ti, Zr and Hf,
(B) 8 ~ 30% be selected from one kind or two or more element in Cr, Mo and W,
(C) 0 ~ 30% be selected from one kind or two or more element in V, Nb and Ta,
(D) 0 ~ 30% be selected from Ni and Mn a kind or 2 kinds of elements,
(E) 0 ~ 5% be selected from Al and Cu a kind or 2 kinds of elements and
(F) the one kind or two or more element be selected from Si, Ge, P, B and C of 0 ~ 10%,
Remaining part contains Co and inevitable impurity,
Further, the element sum that (A) element of organizing and (B) organize is 10 ~ 35at%.
2. magnetic recording non-retentive alloy according to claim 1, wherein,
Described alloy in at%, only by:
Fe：0～70％、
(A) 5 ~ 20% be selected from one kind or two or more element in Ti, Zr and Hf,
(B) 8 ~ 30% be selected from one kind or two or more element in Cr, Mo and W,
(C) 0 ~ 30% be selected from one kind or two or more element in V, Nb and Ta,
(D) 0 ~ 30% be selected from Ni and Mn a kind or 2 kinds of elements,
(E) 0 ~ 5% be selected from Al and Cu a kind or 2 kinds of elements,
(F) 0 ~ 10% be selected from one kind or two or more element in Si, Ge, P, B and C and
Co and the inevitable impurity of remaining part are formed,
Further, the element sum that (A) element of organizing and (B) organize is 10 ~ 35at%.
3. magnetic recording non-retentive alloy according to claim 1 and 2, wherein,
Comprising more than 0% is the element that (C) of below 30at% organizes.
4. magnetic recording non-retentive alloy according to claim 1 and 2, wherein,
Comprising more than 0% is the element that (D) of below 30at% organizes.
5. magnetic recording non-retentive alloy according to claim 3, wherein,
Comprising more than 0% is the element that (D) of below 30at% organizes.
6. the magnetic recording non-retentive alloy according to claim 1,2 or 5, wherein,
Comprising more than 0% is the element that (E) of below 5at% organizes.
7. magnetic recording non-retentive alloy according to claim 3, wherein,
Comprising more than 0% is the element that (E) of below 5at% organizes.
8. magnetic recording non-retentive alloy according to claim 4, wherein,
Comprising more than 0% is the element that (E) of below 5at% organizes.
9. the magnetic recording non-retentive alloy according to claim 1,2,5,7 or 8, wherein,
Comprising more than 0% is the element that (F) of below 10at% organizes.
10. magnetic recording non-retentive alloy according to claim 3, wherein,
Comprising more than 0% is the element that (F) of below 10at% organizes.
11. magnetic recording non-retentive alloies according to claim 4, wherein,
Comprising more than 0% is the element that (F) of below 10at% organizes.
12. magnetic recording non-retentive alloies according to claim 6, wherein,
Comprising more than 0% is the element that (F) of below 10at% organizes.
13. 1 kinds of sputtering target materials, is characterized in that,
Make with the magnetic recording non-retentive alloy according to any one of claim 1 ~ 12.
14. 1 kinds of magnetic recording medias, is characterized in that,
Possesses the soft magnetic film made with the magnetic recording non-retentive alloy according to any one of claim 1 ~ 12.
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| JP2010-240184 | 2010-10-26 | ||
| JP2010240184 | 2010-10-26 | ||
| JP2011092631A JP5714397B2 (en) | 2010-10-26 | 2011-04-19 | Soft magnetic alloy for magnetic recording, sputtering target material, and magnetic recording medium |
| JP2011-092631 | 2011-04-19 | ||
| PCT/JP2011/074448 WO2012057087A1 (en) | 2010-10-26 | 2011-10-24 | Soft magnetic alloy for magnetic recording, sputtering target material, and magnetic recording medium |
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| JP6405261B2 (en) * | 2014-05-01 | 2018-10-17 | 山陽特殊製鋼株式会社 | Soft magnetic alloy for magnetic recording, sputtering target material, and magnetic recording medium |
| CN104388842B (en) * | 2014-12-02 | 2016-08-24 | 北京科技大学 | A kind of Fe-Cr-B system corrosion block non-crystaline amorphous metal and preparation method thereof |
| JP6506659B2 (en) * | 2015-08-24 | 2019-04-24 | 山陽特殊製鋼株式会社 | Amorphous alloy for magnetic recording, sputtering target material and magnetic recording medium |
| CN105755356A (en) * | 2016-03-15 | 2016-07-13 | 梁梅芹 | Preparation method of iron-based nanocrystalline soft magnetic alloy |
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| WO2010007980A1 (en) * | 2008-07-14 | 2010-01-21 | 山陽特殊製鋼株式会社 | Alloys for soft magnetic film layers in vertical magnetic recording media, sputtering target materials and manufacturing method therefore |
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| JPS62263945A (en) * | 1986-05-09 | 1987-11-16 | Victor Co Of Japan Ltd | Soft-magnetic alloy |
| JPH05267031A (en) * | 1992-02-14 | 1993-10-15 | Takeshi Masumoto | Magnetic core material |
| JP2856725B2 (en) * | 1997-05-26 | 1999-02-10 | 松下電器産業株式会社 | Method of forming soft magnetic alloy film |
| JP3182399B2 (en) * | 1997-09-17 | 2001-07-03 | 株式会社東芝 | Soft magnetic alloy film and manufacturing method thereof, magnetic head, and magnetic disk |
| US20080083616A1 (en) * | 2006-10-10 | 2008-04-10 | Hitachi Metals, Ltd. | Co-Fe-Zr BASED ALLOY SPUTTERING TARGET MATERIAL AND PROCESS FOR PRODUCTION THEREOF |
| JP2010111943A (en) * | 2008-10-10 | 2010-05-20 | Hitachi Metals Ltd | Method for producing sputtering target material |
| JP2010159491A (en) * | 2008-12-12 | 2010-07-22 | Hitachi Metals Ltd | Co-Fe-BASED ALLOY SPUTTERING TARGET MATERIAL |
| JP5617112B2 (en) * | 2010-01-14 | 2014-11-05 | 独立行政法人物質・材料研究機構 | Perpendicular magnetic recording medium and manufacturing method thereof |
| JP2011181140A (en) * | 2010-03-01 | 2011-09-15 | Hitachi Metals Ltd | Fe-Co BASED ALLOY SOFT MAGNETIC FILM FOR MAGNETIC RECORDING MEDIUM |
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