CN103221999B - The inculating crystal layer alloy of magnetic recording media and sputtering target material - Google Patents
The inculating crystal layer alloy of magnetic recording media and sputtering target material Download PDFInfo
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- CN103221999B CN103221999B CN201180055776.8A CN201180055776A CN103221999B CN 103221999 B CN103221999 B CN 103221999B CN 201180055776 A CN201180055776 A CN 201180055776A CN 103221999 B CN103221999 B CN 103221999B
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C38/00—Ferrous alloys, e.g. steel alloys
- C22C38/14—Ferrous alloys, e.g. steel alloys containing titanium or zirconium
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- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C19/00—Alloys based on nickel or cobalt
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C19/00—Alloys based on nickel or cobalt
- C22C19/03—Alloys based on nickel or cobalt based on nickel
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C19/00—Alloys based on nickel or cobalt
- C22C19/03—Alloys based on nickel or cobalt based on nickel
- C22C19/05—Alloys based on nickel or cobalt based on nickel with chromium
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
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- C22C19/00—Alloys based on nickel or cobalt
- C22C19/07—Alloys based on nickel or cobalt based on cobalt
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C38/00—Ferrous alloys, e.g. steel alloys
- C22C38/002—Ferrous alloys, e.g. steel alloys containing In, Mg, or other elements not provided for in one single group C22C38/001 - C22C38/60
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C38/00—Ferrous alloys, e.g. steel alloys
- C22C38/008—Ferrous alloys, e.g. steel alloys containing tin
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C38/00—Ferrous alloys, e.g. steel alloys
- C22C38/02—Ferrous alloys, e.g. steel alloys containing silicon
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C38/00—Ferrous alloys, e.g. steel alloys
- C22C38/06—Ferrous alloys, e.g. steel alloys containing aluminium
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C38/00—Ferrous alloys, e.g. steel alloys
- C22C38/08—Ferrous alloys, e.g. steel alloys containing nickel
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C38/00—Ferrous alloys, e.g. steel alloys
- C22C38/10—Ferrous alloys, e.g. steel alloys containing cobalt
- C22C38/105—Ferrous alloys, e.g. steel alloys containing cobalt containing Co and Ni
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C38/00—Ferrous alloys, e.g. steel alloys
- C22C38/12—Ferrous alloys, e.g. steel alloys containing tungsten, tantalum, molybdenum, vanadium, or niobium
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
- C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/73—Base layers, i.e. all non-magnetic layers lying under a lowermost magnetic recording layer, e.g. including any non-magnetic layer in between a first magnetic recording layer and either an underlying substrate or a soft magnetic underlayer
- G11B5/7368—Non-polymeric layer under the lowermost magnetic recording layer
- G11B5/7379—Seed layer, e.g. at least one non-magnetic layer is specifically adapted as a seed or seeding layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/18—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by cathode sputtering
- H01F41/183—Sputtering targets therefor
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
- G11B5/851—Coating a support with a magnetic layer by sputtering
Abstract
The present invention provides the inculating crystal layer alloy of a kind of magnetic recording media, and described alloy can make the Ni system intermediate layer on soft magnetism basement membrane (SUL) have magnetic and can improve magnetic susceptibility.This alloy contains: one or more the M1 element in W, Mo, Ta, Cr, V and Nb, one or more M2 element in Al, Ga, In, Si, Ge, Sn, Zr, Ti, Hf, B, Cu, P, C and Ru, as at least two in Ni, Fe and Co of remainder, wherein, described M1 element is the 2～20at% of alloy, and described M2 element is the 0～10at% of alloy.The amount of Ni, Fe and Co, based on the at% relative to the total amount of Ni+Fe+Co, for (i) Ni: Fe: Co=98～20: 0～50: 0～60 and the ratio of Fe+Co >=1.5, or (ii) Ni: Fe: Co=98～20: 2～the ratio of 50: 0～60.
Description
Association request cross-referenced
The application advocates based on Japanese patent application filed in 22 days November in 2010 No. 2010-259713 and 2011 4
The priority of Japanese patent application 2011-94594 filed in the moon 21, and by their whole disclosure with reference
Form introduces in this specification.
Technical field
The Ni-Fe-Co system magnetic recording media that the present invention relates to use as the inculating crystal layer in perpendicular magnetic recording medium
Inculating crystal layer alloy and sputtering target material.
Background technology
In recent years, perpendicular magnetic recording marked improvement, in order to realize the high capacity of driver, and advancing magnetic recording medium
The high record density of matter.Such as, compared with magnetic recording media in the most universal face, higher packing density can be realized
Perpendicular magnetic recording is the most practical.Here, perpendicular magnetic recording refers to, easy magnetizing axis is relative to perpendicular magnetic recording medium
Medium side in magnetic film is formed in the way of being vertically orientated, the method being adapted for high record density.
In perpendicular magnetic recording, develop improve packing density there is magnetic recording film layer and soft magnetic film layer
Record medium, for this dielectric structure, have developed film forming between soft ferromagnetic layer and magnetic recording layer has inculating crystal layer, substrate
The record medium of film layer.For the inculating crystal layer of perpendicular magnetic recording, such as, such as Japanese Unexamined Patent Publication 2009-155722 public affairs
As disclosed in report (patent documentation 1), it is proposed that the alloy of Ni-W system.
Ni-W system alloy described in this patent documentation 1 is not added with having magnetic VIII, and with the addition of non magnetic
The IVa race (Ti, Zr, Hf) of element, Va race (V, Nb, Ta), VIa race (Cr, Mo, W), VIIa race (Mn, Tc, Re), IIIb race (B,
Al, Ga, In, Tl), IVb race (C, Si, Ge, Sn, Pb), result is non magnetic.Here, characteristic required by inculating crystal layer just like
Under: as its name implies, in order to the orientation of the layer formed on inculating crystal layer is controlled, and make the magnetic of record magnetic information
The easy magnetizing axis of film is vertically orientated relative to medium side, thus inculating crystal layer itself has a single fcc structure, and with
The parallel face of medium side is orientated along (111) face.It addition, need to make the grain size number of magnetic film to improve packing density
The least, for this reason, it may be desirable to less than the grain size number of inculating crystal layer.
Summary of the invention
On the other hand, in recent years, as a kind of method of the magnetic recording characteristic improving hard disk drive, have started to research and make
Inculating crystal layer has magnetic method.But, as it has been described above, the inculating crystal layer alloy described in patent documentation 1 is non magnetic, not
Can say and be suitable as having magnetic inculating crystal layer alloy.It is therefore desirable to exploitation possesses as mentioned above as inculating crystal layer alloy
Required characteristic, and have magnetic inculating crystal layer alloy.It addition, as the bigger difference between soft ferromagnetic layer and inculating crystal layer
Different, for soft ferromagnetic layer, it requires to reduce noise is amorphous, and for inculating crystal layer, it requires to control inculating crystal layer
On the effect of orientation of layer that formed, require that there is high crystalline on the contrary with as amorphous amorphous phase.
This time, the inventors discovered that the element of Fe by adding the magnetic VIII of tool and Co can make inculating crystal layer have
Magnetic, and improve pcrmeability by making the coercive force in (111) direction, face reduce.
Therefore, it is an object of the invention to, it is provided that the Ni system intermediate layer on soft magnetism basement membrane (SUL) can be made to have
Magnetic and the inculating crystal layer alloy of magnetic recording media of pcrmeability can be improved and employ the sputtering target material of this alloy.
A kind of scheme according to the present invention, it is provided that the inculating crystal layer alloy of a kind of magnetic recording media, described alloy contains:
One or more M1 element in W, Mo, Ta, Cr, V and Nb, described M1 element is described alloy
2～20at%；
One or more M2 unit in Al, Ga, In, Si, Ge, Sn, Zr, Ti, Hf, B, Cu, P, C and Ru
Element, described M2 element is the 0～10at% of described alloy；
As Ni, Fe and Co of remainder, described Ni, Fe and Co based on the at% relative to the total amount of Ni+Fe+Co,
For Ni: Fe: Co=98～20: 0～50: 0～60 and the ratio of Fe+Co >=1.5.
Other schemes according to the present invention, it is provided that the inculating crystal layer alloy of a kind of magnetic recording media, described alloy contains:
One or more M1 element in W, Mo, Ta, Cr, V and Nb, described M1 element is described alloy
2～20at%；
One or more M2 unit in Al, Ga, In, Si, Ge, Sn, Zr, Ti, Hf, B, Cu, P, C and Ru
Element, described M2 element is the 0～10at% of described alloy；
As Ni, Fe and Co of remainder, described Ni, Fe and Co based on the at% relative to the total amount of Ni+Fe+Co,
For Ni: Fe: Co=98～20: 2～50: 0～the ratio of 60.
Other schemes according to the present invention, it is provided that a kind of sputtering target material including above-mentioned alloy.
Other schemes according to the present invention, it is provided that a kind of magnetic recording media possessing the inculating crystal layer including above-mentioned alloy.
Detailed description of the invention
Hereinafter, the present invention is specifically described.Unless otherwise specified, in this manual " % " represents at%.
The inculating crystal layer alloy of the magnetic recording media obtained by the present invention contains (comprising): selected from W, Mo, Ta, Cr, V
And the M1 element of one or more in Nb, described M1 element be alloy 2～20at%, selected from Al, Ga, In, Si, Ge,
One or more M2 element in Sn, Zr, Ti, Hf, B, Cu, P, C and Ru, described M2 element be alloy 0～10at%,
As at least two in Ni, Fe and Co of remainder, the most substantially it is made up of these elements and inevitable impurity
(consisting essentially of), is the most only constituted (consisting by these elements and inevitable impurity
of).Wherein, Ni, Fe and Co respectively measure based on the at% relative to the total amount of Ni+Fe+Co, are set to (i) Ni: Fe: Co=98～20:
0～50: 0～60 and the ratio of Fe+Co >=1.5 or be set to (ii) Ni: Fe: Co=98～20: 2～the ratio of 50: 0～60.
In the alloy obtained by the present invention, the schedule of proportion of Ni, Fe and Co is being shown as Ni: the situation of Fe: Co=α: β: γ
Under, the at making Ni is 98 (tighter saying to be 98.5)～20 than α, preferably 98 (tighter saying to be 98.5)～60.If α surpasses
Cross 98.5, then β+γ becomes less than 1.5, and coercive force uprises, even if α is also identical with above-mentioned situation less than 20, coercive force uprises.
Fe is the element reducing coercive force, and, still improve the element of the orientation of film, be expressed as Ni: Fe: Co
In the case of=α: β: γ, the at of Fe is made to be 0～50, preferably 2～50% than β, be more preferably 10～40.If β is more than 50,
Then coercive force uprises.
Co is the element of the coercive force reducing (111) direction, is being set to Ni: in the case of Fe: Co=α: β: γ, make Co
At be 0～60 than γ, preferably less than 40.If γ is more than 60, then coercive force uprises.
The alloy obtained by the present invention contains the M1 element of one or more in W, Mo, Ta, Cr, V and Nb,
Described M1 element is the 2～20at% of whole alloy, preferably 5～15%.This M1 element is to have dystectic bcc system gold
Belong to, although its mechanism is unclear, but this M1 element is by adding in composition range given to this invention to fcc conjunction
In gold system, thus improve the orientation in (111) face required by inculating crystal layer, and make the element of crystal grain miniaturization.But, as
Really M1 amount of element is less than 2%, then its effect is insufficient, if it addition, M1 amount of element is more than 20%, then compound separates out, or
There is amorphization.As inculating crystal layer alloy, single-phase owing to requiring as fcc, therefore the scope of its M1 amount of element is described above.
In above-mentioned element, orientation effectively W and Mo to (111) face, the most preferably adds the one or two in W and Mo
Kind, it is also possible to add in Cr, Ta, V and Nb any one or two or more.It reason for this is that, at Ni and high-melting-point bcc metal
Combination in, the fusing point of Mo and W higher than Cr the most advantageously.It addition, compared with W and Mo, Ta, V or Nb are added on raising
Amorphism aspect also plays a role, and is unfavorable for that the fcc phase required by inculating crystal layer is formed.Cr preferably adds more than 5%, this
In the case of, favourable at the aspect of orientation.
The alloy obtained by the present invention contains in Al, Ga, In, Si, Ge, Sn, Zr, Ti, Hf, B, Cu, P, C and Ru
One or more M2 element is as arbitrary element, and described M2 element is the 0～10at% of alloy, preferably 1～10%,
More preferably 5%.This M2 element is the element making (111) planar orientation, it addition, be the element making crystal grain miniaturization.But,
If M2 amount of element is more than 10%, then generates compound, or amorphization occurs.It addition, the total amount of M1+M2 is preferably
Below 25at%, more preferably below 20at%.
Embodiment
Hereinafter, by embodiment, the present invention is specifically described.
Generally, the inculating crystal layer in perpendicular magnetic recording medium is the sputtering target material by sputtering with its composition identical component, and
On glass substrate etc., film forming obtains.Here, to by sputtering, the thin film of film forming carries out chilling.As the confession in the present invention
Examination material, uses the chilling strip utilizing the quenching apparatus of mono-roller type and make.This can utilize liquid chilling strip simply,
On in reality because of sputtering by the thin film of chilling film forming, the impact on each characteristic that brought by composition is evaluated
The making of chilling strip
The raw material 30g utilizing the water-cooled copper mold about diameter 10mm, length 40mm to weigh the composition according to table 1 enters
Row decompression, carries out arc-melting in Ar, makes the melted mother metal of chilling strip.The manufacturing conditions of chilling strip is as follows: with list
Roller mode, places this melted mother metal in the quartzy tank of diameter 15mm, tapping nozzle diameter is set to 1mm, at atmosphere pressures
61kPa, spraying pressure reduction 69kPa, the rotating speed of copper roller (diameter 300mm) are 3000rpm, copper roller with the gap of tapping nozzle is
Tapping is carried out under conditions of 0.3mm.Tapping temperature is set to after each dissolving mother metal just melts.The chilling that will make by this way
Following project, as material to be tested, is evaluated by strip.
The evaluation of coercive force
In the coercimeter of vibration sample type, sample bench attaches chilling strip with double faced adhesive tape, utilizes 144kA/m
Initial externally-applied magnetic field measure chilling strip coercive force.The situation that coercive force is below 300A/m is evaluated as zero, will
Situation more than 300A/m and below 500A/m is evaluated as △, the situation more than 500A/m is evaluated as ×.
The evaluation of saturation flux density
In VSM device (vibration sample type magnetometer), the externally-applied magnetic field of 1200kA/m is utilized to measure the saturated magnetic of chilling strip
Flux density.The weight of material to be tested is about 15mg, and the situation of more than 0.2T is evaluated as zero, the situation less than 0.2T is evaluated as ×.
(111) planar orientation is evaluated
By sputtering, the inculating crystal layer of film forming is fcc structure.By inculating crystal layer chilling, and (200) are made to be orientated.Logical
Often, if it occur that random orientation, then, for the X-ray diffraction intensity in (111) face and (200) face, I (200) will be above I
(111).Therefore, by following method, the orientation in (111) face of chilling strip is evaluated.
Attach material to be tested with double faced adhesive tape on a glass, utilize X-ray diffraction device to obtain diffracting spectrum.Now, so that
The mode of the copper roller contact surface that mensuration face becomes chilling strip attaches material to be tested.X-ray source is Cu-alpha ray, with 4 °/min's
Scanning speed is measured.The intensity I (111) of the X-ray of diffraction will be there is and in (200) in (111) face of this diffracting spectrum
Face occur diffraction X-ray intensity I (200) between strength ratio I (111)/I (200) less than 0.7 situation be evaluated as ×,
The situation of more than 0.7 is evaluated as zero.It addition, the situation of the situation of generation compound, generation amorphization is evaluated as ×.
The evaluation of crystallization particle diameter
On the roller direction of the cross section microstructure image of chilling strip, according to JIS G0551 " showing of steel grain size number
Micro mirror test method " measure chilling strip crystallization particle diameter.The situation that P/Lt is more than 1.0 is evaluated as zero, by 0.5 with and little
Situation in 1.0 is evaluated as △, the situation less than 0.5 is evaluated as ×.
[table 1]
[table 2]
[table 3]
[table 4]
[table 5]
Note) underscore represents outside the condition of the present invention
[table 6]
[table 7]
[table 8]
Note) underscore represents outside the condition of the present invention
As shown in table 1～8, No.1～95,125～188 are example of the present invention, and No.96～124 and 189～193 is for comparing
Example.No.194 is reference example.
It should be noted that for becoming the such as No.1 described in being grouped into shown in table 1～8, W is 2at%, therefore
(Ni2Fe) be 100%-2%, i.e. 98at%, when by this 98% be set to 1 time, Ni is the ratio of (100-2), and Fe is the ratio of 2.
Further, since do not contain Co, therefore its ratio is equivalent to 0.Similarly, for No.50, W and In adds up to 7at%, therefore
(Ni50Fe) being 100%-7%, i.e. 93at%, when this 93at% is set to 1, Ni is the ratio of 100-50, and Fe is the ratio of 50
Example, it means that Ni and Fe, with the half of ratio more identical than being calculated as at, respectively 93at%, is respectively 46.5at%.
Comparative example No.96 comprises only Ni, and coercive force is high, and orientation and crystallization particle diameter are the poorest.Comparative example No.97 does not contains
M element, orientation and crystallization particle diameter are the poorest.The Fe content of comparative example No.98 is high, and therefore coercive force uprises.Comparative example No.99
The content of W low and Al content high, therefore coercive force slightly uprises and poor orientation.The W content of comparative example No.100 is high, because of
This is difficult to measure coercive force, it addition, saturation flux density and poor orientation.
Comparative example No.101,102 the content of W low, and the content of Zr and B is high, therefore poor orientation.Comparative example No.103
The content of Ni low, the content of Fe is high, and therefore coercive force uprises.The content of the Ni of comparative example No.104 is low, and the content of Fe is high,
Therefore coercive force uprises.The content of the Cr of comparative example No.105 is low, and therefore coercive force is high, and orientation and crystallization particle diameter are all
Difference.The content of the Cr of comparative example No.106 is high, and whole characteristics is the poorest.The content of the Mo of comparative example No.107 is low, therefore
Coercive force is high, and orientation and crystallization particle diameter are the poorest.
The content of the Mo of comparative example No.108 is high, and whole characteristics is poor.The content of the Ta of comparative example No.109 is low, therefore
Coercive force is high, and orientation and crystallization particle diameter are poor.The content of the Ta of comparative example No.110 is high, and whole characteristics is poor.Comparative example
The content of the V of No.111 is low, and therefore coercive force is high, and orientation and crystallization particle diameter are the poorest.The content of the V of comparative example No.112 is high,
Whole characteristics is poor.The content of the Nb of comparative example No.113 is low, and therefore coercive force is high, and orientation and crystallization particle diameter are the poorest.
The content of the Nb of comparative example No.114 is high, and whole characteristics is poor.The content of the Ca of comparative example No.115 is high, because of
This orientation is constituted and crystallization particle diameter is poor.The content of the In of comparative example No.116 is high, and therefore orientation is constituted and crystallization particle diameter is poor.Relatively
The content of the Si of example No.117 is high, and therefore orientation is constituted and crystallization particle diameter is poor.The content of the Ge of comparative example No.118 is high, therefore takes
Poor to composition and crystallization particle diameter.The content of the Ti of comparative example No.119 is high, and therefore orientation is constituted and crystallization particle diameter is poor.
The content of the Hf of comparative example No.120 is high, and therefore orientation is constituted and crystallization particle diameter is poor.The Cu's of comparative example No.121
Content is high, and therefore orientation is constituted and crystallization particle diameter is poor.The content of the P of comparative example No.122 is high, and therefore orientation is constituted and crystal grain
Footpath is poor.The content of the C of comparative example No.123 is high, and therefore orientation is constituted and crystallization particle diameter is poor.The content of the Ru of comparative example No.124
Height, therefore orientation is constituted and crystallization particle diameter is poor.
The content of the Fe+Co of the comparative example No.189 of table 8 is low, and therefore coercive force is poor.The Fe+Co's of comparative example No.190
Content is low, and therefore coercive force is poor.The content of the Fe+Co of No.191 is low, and therefore coercive force is poor.The Fe+Co of No.192 contains
Measuring low, therefore coercive force is poor.The content of the Fe+Co of No.193 is low, and therefore coercive force is poor.No.194 is in condition of the present invention
In, but Cr addition is 4.9 to be not above 5, therefore characteristic is slightly worse.Therefore, as reference example.
As previously discussed, find in Ni-Fe-Co-M alloy, by being limited in certain content, and by being limited in this
Region, thus there is magnetic, and make the pcrmeability in (111) direction uprise, by giving magnetic to Ni system inculating crystal layer, thus play
The such excellent effect of the distance between magnetic head and soft magnetism basement membrane can be shortened.
The manufacture of sputtering target material and evaluation
It follows that illustrate the example of the manufacture method of sputtering target material.According to example No.2 of the present invention of table 1, No.10,
No.14, No.18, No.25 and the No.35 of table 2, No.38, No.43, the No.51 of table 3, No.70, the No.79 of table 4, No.85,
No.89, No.95, the No.102 of table 5, No.117, No.118, No122, the No.128 of table 6, No.135, No.144, table 7
It is molten that one-tenth shown in No.159, No.170, No176, the No.188 of table 8, comparative example No.190, comparative example No.193 is grouped into weighing
Melt fuel, in the refractory crucible of gas atmosphere decompression Ar by molten fuel induction heating melting after, straight from crucible bottom
The nozzle tapping of footpath 8mm, utilizes Ar gas to be atomized.As the material powder of this gas atomized powder, fill it into carbon
The diameter 250mm of steel, length 100mm sealing container in, carry out vacuum exhaust sealing.
For the No.2 of table 1, No.10, No.14, No.18, No.25, No.51, No.70 of table 3, in forming temperature 1000 DEG C, molding
Above-mentioned powder is filled steel billet under conditions of 1 hour and is carried out HIP molding by pressure 147MPa, molding time, for the No.35 of table 2, No.38,
No.43, No.79, No.85, No.89, No.95 of table 4, at forming temperature 1100 DEG C, briquetting pressure 147MPa, the molding time bar of 3 hours
Under part, above-mentioned powder is filled steel billet and carries out HIP molding, for the No.102 of table 5, No.117, No.118, No.122, the No.128 of table 6,
No.135, No.144, the No.159 of table 7, No.170, No176, the No.188 of table 8, comparative example No.190, comparative example No.193, in molding temperature
Spend 950 DEG C, briquetting pressure 147MPa, molding time under conditions of 5 hours to above-mentioned powder fill steel billet carry out HIP molding.Cut by line
Cut, this HIP body is processed into diameter 180mm by lathe process, plane lapping etc., thickness 7mm discoid, as sputtering target material.
Use sputtering target material is grouped into for above-mentioned 27 kinds of one-tenth, makes sputtered film film forming on the glass substrate.X-ray diffractogram
Spectrum, example No.2 of the present invention, No.10, No.14, No.18, No.25, No.35, No.38, No.43, No.51, No.70, No.79,
No.85, No.89, No.95, No.128, No.135, No.144, No.159, No.170, No.176, No.186 all observe good
Good orientation, comparative example No.102, No.117, No.118, No.122 do not observe good orientation.
It addition, carried out in the same manner as chilling strip the mensuration of magnetic characteristic, result example No.2 of the present invention, No.10,
No.14、No.18、No.25、No.35、No.38、No.43、No.51、No.70、No.79、No.85、No.89、No.95、
No.128, No.135, No.144, No.159, No.170, No.176, No.186 all observe good magnetic characteristic, comparative example
No.189, comparative example No.190, comparative example No.193 then do not observe good magnetic characteristic.For X ray diffracting spectrum, with urgency
Cold strip is similarly determined, and its result is identical with the result utilizing chilling strip to be evaluated, be zero, △, ×.Right
Summary carried out above, confirms that the result utilizing chilling strip to be evaluated and use sputtering target material carry out commenting of the sputtered film of film forming
Valency has identical tendency.
Claims (12)
1. an inculating crystal layer alloy for magnetic recording media, it has fcc structure, contains:
One or more M1 element in W, Mo, Ta, Cr, V and Nb, described M1 element be described alloy 2～
20at%；
One or more M2 element in Al, Ga, In, Si, Ge, Sn, Zr, Ti, Hf, B, Cu, P, C and Ru, institute
State 0～10at% that M2 element is described alloy；
As Ni, Fe and Co of remainder, described Ni, Fe and Co are based on the at% relative to the total amount of Ni+Fe+Co, for Ni:
Fe:Co=98～20:0～50:0～60 and the ratio of Fe+Co >=1.5,
Further, the diffracted intensity I of the X-ray in the diffracted intensity I (111) of the X-ray in (111) face of fcc structure and (200) face
(200) strength ratio I (111)/I (200) is more than 0.7.
Alloy the most according to claim 1, wherein, only by the M1 element of the 2～20at% of described alloy, described alloy
The M2 element of 0～10at%, as remainder Ni, Fe and Co and inevitably impurity constitute.
Alloy the most according to claim 1 and 2, wherein, containing one or both in W and Mo.
Alloy the most according to claim 1 and 2, wherein, containing the Cr having more than 5%.
Alloy the most according to claim 1 and 2, wherein, containing have more than 0% and below 10at% selected from Al, Ga, In,
One or more in Si, Ge, Sn, Zr, Ti, Hf, B, Cu, P, C and Ru.
6. an inculating crystal layer alloy for magnetic recording media, it has fcc structure, contains:
One or more M1 element in W, Mo, Ta, Cr, V and Nb, described M1 element be described alloy 2～
20at%；
One or more M2 element in Al, Ga, In, Si, Ge, Sn, Zr, Ti, Hf, B, Cu, P, C and Ru, institute
State 0～10at% that M2 element is described alloy；
As Ni, Fe and Co of remainder, described Ni, Fe and Co are based on the at% relative to the total amount of Ni+Fe+Co, for Ni:
The ratio of Fe:Co=98～20: 2～50: 0～60,
Further, the diffracted intensity I of the X-ray in the diffracted intensity I (111) of the X-ray in (111) face of fcc structure and (200) face
(200) strength ratio I (111)/I (200) is more than 0.7.
Alloy the most according to claim 6, wherein, only by the M1 element of the 2～20at% of described alloy, described alloy
The M2 element of 0～10at%, as remainder Ni, Fe and Co and inevitably impurity constitute.
8. according to the alloy described in claim 6 or 7, wherein, containing one or both in W and Mo.
9. according to the alloy described in claim 6 or 7, wherein, containing the Cr having more than 5%.
10. according to the alloy described in claim 6 or 7, wherein, containing have more than 0% and below 10at% selected from Al, Ga, In,
One or more in Si, Ge, Sn, Zr, Ti, Hf, B, Cu, P, C and Ru.
11. 1 kinds of sputtering target materials, it includes in claim 1～10 alloy described in any one.
12. 1 kinds of magnetic recording medias, it possesses the inculating crystal layer including in claim 1～10 alloy described in any one.
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| Application Number | Priority Date | Filing Date | Title |
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| JP2010259713 | 2010-11-22 | ||
| JP2010-259713 | 2010-11-22 | ||
| JP2011-094594 | 2011-04-21 | ||
| JP2011094594A JP5726615B2 (en) | 2010-11-22 | 2011-04-21 | Alloy for seed layer of magnetic recording medium and sputtering target material |
| PCT/JP2011/076529 WO2012070464A1 (en) | 2010-11-22 | 2011-11-17 | Alloy for seed layer of magnetic recording medium, and sputtering target material |
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| CN103221999B true CN103221999B (en) | 2016-10-19 |
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| CN (1) | CN103221999B (en) |
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| JP6050050B2 (en) * | 2012-08-14 | 2016-12-21 | 山陽特殊製鋼株式会社 | Fe-Co alloy sputtering target material and method for producing the same |
| CN104651788B (en) * | 2013-11-21 | 2017-03-15 | 安泰科技股份有限公司 | Ni Fe W alloys targets and its manufacture method |
| CN103938030B (en) * | 2014-04-29 | 2015-12-09 | 深圳市天瑞科技有限公司 | A kind of preparation method of Ni-based soft magnetic materials |
| CN105420678B (en) * | 2014-09-15 | 2018-03-09 | 安泰科技股份有限公司 | A kind of Al addition Ni W alloys targets and its manufacture method |
| US9685184B1 (en) * | 2014-09-25 | 2017-06-20 | WD Media, LLC | NiFeX-based seed layer for magnetic recording media |
| JP6502672B2 (en) * | 2015-01-09 | 2019-04-17 | 山陽特殊製鋼株式会社 | Alloy for seed layer of Ni-Cu based magnetic recording medium, sputtering target material and magnetic recording medium |
| JP6581780B2 (en) * | 2015-02-09 | 2019-09-25 | 山陽特殊製鋼株式会社 | Ni-based target material with excellent sputtering properties |
| SG11201707351RA (en) * | 2015-03-12 | 2017-10-30 | Sanyo Special Steel Co Ltd | Ni-BASED SPUTTERING TARGET MATERIAL AND MAGNETIC RECORDING MEDIUM |
| JP6431496B2 (en) * | 2016-04-13 | 2018-11-28 | 山陽特殊製鋼株式会社 | Alloy for seed layer of magnetic recording medium, sputtering target material, and magnetic recording medium |
| JP2018053280A (en) * | 2016-09-27 | 2018-04-05 | 山陽特殊製鋼株式会社 | NiTa-BASED ALLOY, TARGET MATERIAL AND MAGNETIC RECORDING MEDIA |
| JP7157573B2 (en) * | 2018-07-04 | 2022-10-20 | 山陽特殊製鋼株式会社 | Ni-based alloy for seed layer of magnetic recording media |
| JP7274361B2 (en) * | 2019-06-19 | 2023-05-16 | 山陽特殊製鋼株式会社 | Alloy for seed layer of magnetic recording media |
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| JP4224804B2 (en) * | 2002-06-19 | 2009-02-18 | 富士電機デバイステクノロジー株式会社 | Method for manufacturing perpendicular magnetic recording medium |
| JP4812254B2 (en) * | 2004-01-08 | 2011-11-09 | 富士電機株式会社 | Perpendicular magnetic recording medium and manufacturing method thereof |
| US20070253103A1 (en) * | 2006-04-27 | 2007-11-01 | Heraeus, Inc. | Soft magnetic underlayer in magnetic media and soft magnetic alloy based sputter target |
| JP4632144B2 (en) * | 2007-09-14 | 2011-02-16 | 富士電機デバイステクノロジー株式会社 | Magnetic recording medium |
| JP2009116952A (en) * | 2007-11-06 | 2009-05-28 | Hitachi Global Storage Technologies Netherlands Bv | Perpendicular magnetic recording medium, and magnetic memory using the same |
| JP4993296B2 (en) * | 2007-11-29 | 2012-08-08 | 富士電機株式会社 | Perpendicular magnetic recording medium |
| JP5337451B2 (en) * | 2008-11-06 | 2013-11-06 | エイチジーエスティーネザーランドビーブイ | Perpendicular magnetic recording medium |
| JP4697337B2 (en) * | 2010-01-18 | 2011-06-08 | 富士電機デバイステクノロジー株式会社 | Perpendicular magnetic recording medium |
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| JP2012128933A (en) | 2012-07-05 |
| JP5726615B2 (en) | 2015-06-03 |
| SG190358A1 (en) | 2013-06-28 |
| CN103221999A (en) | 2013-07-24 |
| MY159936A (en) | 2017-02-15 |
| TWI512113B (en) | 2015-12-11 |
| WO2012070464A1 (en) | 2012-05-31 |
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