CN103221568A - Soft magnetic alloy for magnetic recording, sputtering target material, and magnetic recording medium - Google Patents
Soft magnetic alloy for magnetic recording, sputtering target material, and magnetic recording medium Download PDFInfo
- Publication number
- CN103221568A CN103221568A CN2011800513011A CN201180051301A CN103221568A CN 103221568 A CN103221568 A CN 103221568A CN 2011800513011 A CN2011800513011 A CN 2011800513011A CN 201180051301 A CN201180051301 A CN 201180051301A CN 103221568 A CN103221568 A CN 103221568A
- Authority
- CN
- China
- Prior art keywords
- magnetic recording
- kinds
- alloy
- sample
- elements
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 58
- 238000005477 sputtering target Methods 0.000 title claims abstract description 16
- 239000013077 target material Substances 0.000 title claims description 15
- 229910001004 magnetic alloy Inorganic materials 0.000 title abstract 2
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 35
- 239000000956 alloy Substances 0.000 claims abstract description 35
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 9
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 8
- 229910052758 niobium Inorganic materials 0.000 claims abstract description 8
- 229910052720 vanadium Inorganic materials 0.000 claims abstract description 8
- 229910052726 zirconium Inorganic materials 0.000 claims abstract description 8
- 229910052735 hafnium Inorganic materials 0.000 claims abstract description 7
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 7
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 7
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 7
- 239000012535 impurity Substances 0.000 claims abstract description 5
- 230000004907 flux Effects 0.000 abstract description 10
- 238000002425 crystallisation Methods 0.000 abstract description 9
- 230000008025 crystallization Effects 0.000 abstract description 9
- 229910052802 copper Inorganic materials 0.000 abstract description 6
- 230000007797 corrosion Effects 0.000 abstract description 5
- 238000005260 corrosion Methods 0.000 abstract description 5
- 229910052742 iron Inorganic materials 0.000 abstract description 5
- 229910052748 manganese Inorganic materials 0.000 abstract description 2
- 229910052759 nickel Inorganic materials 0.000 abstract description 2
- 238000005280 amorphization Methods 0.000 description 17
- 238000011156 evaluation Methods 0.000 description 14
- 230000003628 erosive effect Effects 0.000 description 13
- 239000010949 copper Substances 0.000 description 11
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 11
- 230000005294 ferromagnetic effect Effects 0.000 description 7
- 238000012360 testing method Methods 0.000 description 7
- 229910000531 Co alloy Inorganic materials 0.000 description 6
- 230000007812 deficiency Effects 0.000 description 6
- 208000002173 dizziness Diseases 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 235000014347 soups Nutrition 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 4
- 238000007872 degassing Methods 0.000 description 4
- 238000006253 efflorescence Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 206010037844 rash Diseases 0.000 description 4
- 238000005303 weighing Methods 0.000 description 4
- 239000007864 aqueous solution Substances 0.000 description 3
- 239000002178 crystalline material Substances 0.000 description 3
- 230000006837 decompression Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- ZZUFCTLCJUWOSV-UHFFFAOYSA-N furosemide Chemical compound C1=C(Cl)C(S(=O)(=O)N)=CC(C(O)=O)=C1NCC1=CC=CO1 ZZUFCTLCJUWOSV-UHFFFAOYSA-N 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000005300 metallic glass Substances 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 238000010791 quenching Methods 0.000 description 2
- 239000011780 sodium chloride Substances 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 238000004093 laser heating Methods 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/64—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
- G11B5/66—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent the record carriers consisting of several layers
- G11B5/667—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent the record carriers consisting of several layers including a soft magnetic layer
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/11—Making amorphous alloys
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C33/00—Making ferrous alloys
- C22C33/003—Making ferrous alloys making amorphous alloys
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C45/00—Amorphous alloys
- C22C45/02—Amorphous alloys with iron as the major constituent
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C45/00—Amorphous alloys
- C22C45/04—Amorphous alloys with nickel or cobalt as the major constituent
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/18—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by cathode sputtering
- H01F41/183—Sputtering targets therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
- H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
- H01F10/12—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys
- H01F10/16—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys containing cobalt
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physical Vapour Deposition (AREA)
- Magnetic Record Carriers (AREA)
- Thin Magnetic Films (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
- Powder Metallurgy (AREA)
Abstract
Provided is a soft magnetic alloy for a heat-assisted magnetic recording medium having superior saturation magnetic flux density, non-crystallization properties, crystallization temperature, and corrosion resistance. A sputtering target therefor and a magnetic recording medium are also provided. This alloy is formed from: in at%, 0-70% Fe; 5-20% of one or more elements (A) selected from a group formed from Ti, Zr, and Hf; 0-30% of one or more elements (B) selected from a group formed from Cr, Mo, and W; 0-30% of one or more elements (C) selected from a group formed from V, Nb, and Ta; 0-30% of one or more elements (D) selected from a group formed from Ni and Mn; 0-5% of one or more elements (E) selected from a group formed from Al and Cu; and 0-10% of one or more elements (F) selected from a group formed from Si, Ge, P, B, and C, with the remainder being Co and inevitable impurities.
Description
The cross-reference of association request
The application advocates Japanese patent application 2010-240184 number and Japanese patent application 2011-92631 number right of priority of application on April 19th, 2011 based on application on October 26th, 2010, and the disclosure utilization that it is whole is with reference to including in this specification sheets.
Technical field
The present invention relates to be used for as the Co that hard disk drive uses with the soft magnetic underlayer (SUL layer) of HAMR medium is magnetic recording with non-retentive alloy and the sputtering target material and the magnetic recording media that have used this alloy.
Background technology
In recent years, the progress of Magnetographic Technology is fairly obvious, in order to realize the high capacity of driving mechanism, among the high record densityization of magnetic recording media is advancing, studying with the perpendicular magnetic recording medium of popularizing in the past and comparing the HAMR mode that can further realize high record densityization.
The HAMR mode is the mode of record data when utilizing the LASER HEATING magnetic recording media.When the densification of magnetic recording media advanced, the data of magnetic recording will become obvious because of the problem of the thermal fluctuation that the influence of heat on every side disappears.For avoiding the problem of this thermal fluctuation, need to improve the coercive force of magneticsubstance used in the recording medium.But, if coercive force is too high, will record.The mode that addresses this problem is the HAMR mode.
On the other hand, when adding thermal recording media, coercive force will descend, thereby can record, and when the medium cooling of record back, coercive force can uprise once more, therefore grow aspect thermal fluctuation.As the magnetic recording media that hot supplementary mode is used, for example studied the magnetic recording media shown in the TOHKEMY 2010-182386 communique (patent documentation 1).Disclosed in this patent documentation 1, require amorphous for soft ferromagnetic layer, and hot supplementary mode is as mentioned above, recording medium be heated.Thus, for the soft ferromagnetic layer alloy shown in the patent documentation 1, can crystallization even require when heating also not, sufficiently high crystallized temperature.But according to TOHKEMY 2001-110044 communique (patent documentation 2), the crystallized temperature of the soft ferromagnetic layer shown in the patent documentation 1 is about 400 ℃ (670K), therefore has the problem that crystallization takes place.
In addition, increasing this strong outstanding " ア モ Le Off ア ス Jin Shu Ji Foundation (basis of amorphous metal) " OHM company, 1982, among the P94 (non-patent literature 1) under the disclosed composition, demonstrate the crystallized temperature about 800K, yet, therefore when being used for soft ferromagnetic layer, aspect erosion resistance, have problems owing to used the semi-metal of Si, Ge, P, B, C and so on.In addition, with regard to nonmagnetic alloy, as shown in non-patent literature 2, also introduced the alloy that demonstrates above the crystallized temperature of 800K, yet in the soft magnetic film purposes, required to have magnetic, therefore can't be suitable for.
The prior art document
Patent documentation
Patent documentation 1: TOHKEMY 2010-182386 communique
Patent documentation 2: TOHKEMY 2001-110044 communique
Non-patent literature
Non-patent literature 1: increase this strong outstanding " ア モ Le Off ア ス Jin Shu Ji Foundation (basis of amorphous metal) " OHM company, 1982, P94
Non-patent literature 2:OH JE, WOOLLAM J A, AYLESWORTHKD, SELLMYER D J, POUCH J J, J Appl Phys., Vol.60, No.12PP.4271～4286,1986
The content of invention
As mentioned above, for the soft ferromagnetic layer requirement amorphous of the alloy in the patent documentation 1, yet, therefore with regard to the soft ferromagnetic layer shown in the patent documentation 1, there is the problem that crystallization takes place because hot supplementary mode will heat recording medium.In addition, if disclosed composition in the non-patent literature 1 demonstrates the crystallized temperature about 800K, yet, therefore when being used for soft ferromagnetic layer, aspect erosion resistance, have problems owing to used the semi-metal of Si, Ge, P, B, C and so on.
The inventor etc. this time obtain following opinion, that is, in the Co alloy, (1) utilizes the interpolation of the so decrystallized promotion element of Zr, Hf and/or Ti can guarantee amorphism; (2) utilize the interpolation of V, Nb, Ta, Cr, Mo and/or W can realize high crystallized temperature, and can help the raising of amorphism; (3) utilize the interpolation of Ni and/or Mn can adjust saturation magnetic flux density; (4) utilize the interpolation of Al and/or Cu can realize the raising of erosion resistance; (5) utilize the interpolation of Si, Ge, P, B and/or C can realize the improvement of amorphism, thereby the magnetic recording non-retentive alloy that can realize excellent characteristic can be provided.
So, the objective of the invention is to, the HAMR medium that saturation magnetic flux density, amorphism, crystallized temperature and excellent corrosion resistance be provided is with non-retentive alloy, the sputtering target material that has used it and magnetic recording media.
According to a mode of the present invention, a kind of magnetic recording non-retentive alloy is provided, it comprises in at%:
Fe：0～70％、
(A) 5～20% be selected from Ti, Zr, and Hf in the element more than a kind or 2 kinds,
(B) 0～30% be selected from Cr, Mo, and W in the element more than a kind or 2 kinds,
(C) 0～30% be selected from V, Nb, and Ta in the element more than a kind or 2 kinds,
(D) 0～30% be selected among Ni and the Mn a kind or 2 kinds of elements,
(E) 0～5% be selected among Al and the Cu a kind or 2 kinds of elements and
(F) 0～10% be selected from Si, Ge, P, B, and C in the element more than a kind or 2 kinds,
Co and unavoidable impurities are contained in surplus portion.
According to another mode of the present invention, provide the sputtering target material of making of non-retentive alloy with aforesaid magnetic recording.
According to another mode of the present invention, provide to possess with the magnetic recording media of aforesaid magnetic recording with the soft magnetic film of non-retentive alloy making.
Embodiment
Below the present invention is specifically described.Short ofly express especially, " % " just is meant at% in this specification sheets.
Magnetic recording of the present invention comprises Fe:0～70% with non-retentive alloy in at%, (A) 5～20% be selected from Ti, Zr, and the element more than a kind or 2 kinds among the Hf, (B) 0～30% be selected from Cr, Mo, and the element more than a kind or 2 kinds among the W, (C) 0～30% be selected from V, Nb, and the element more than a kind or 2 kinds among the Ta, (D) 0～30% be selected from a kind or 2 kinds of elements among Ni and the Mn, (E) 0～5% be selected from a kind or 2 kinds of elements among Al and the Cu, and (F) 0～10% be selected from Si, Ge, P, B, and the element more than a kind or 2 kinds among the C, Co and unavoidable impurities are contained in surplus portion, preferably substantially constitute, more preferably only constitute by these elements by these elements.
Alloy of the present invention contains 0～70%, preferred 20～70%, more preferably 30～50% Fe.Fe is the element that is used to obtain soft magnetic material, yet if surpasses 70%, the erosion resistance deterioration.
Alloy of the present invention contain 5～20%, preferred 6～15%, more preferably 9～14% be selected from Ti, Zr, and Hf in (A) group element more than a kind or 2 kinds.Ti, Zr and Hf are to be the element that is used to guarantee decrystallized (amorphous voltinism) in the alloy at Co, if the total content of these elements is 5～20%, then can realize amorphization fully.
According to preferred mode of the present invention, alloy also can contain 5～30%, preferred 10～25% be selected from Cr, Mo, and W in (B) group element more than a kind or 2 kinds.Cr, Mo and W are the elements that is used to realize high crystallized temperature in the Co alloy, if the total content more than a kind or 2 kinds of this element is 5～30%, then can realizes this effect fully, and help amorphization.
According to preferred mode of the present invention, also can with (A) group element and (B) group element and be made as 10～35%.If in this scope, then can help amorphization, and can prevent the reduction of magnetic effectively.
According to preferred mode of the present invention, alloy also can contain below 30%, preferred below 20%, more preferably below 10% be selected from V, Nb, and Ta in (C) group element more than a kind or 2 kinds.V, Nb and Ta are the element that is used for improving significantly erosion resistance and promotes amorphization in the Co alloy, particularly with the situation of the compound interpolation of (B) group under can realize high corrosion resistance and high crystallized temperature.If the total content of these elements is below 30%, then help amorphization.
According to preferred mode of the present invention, alloy also can contain below 30%, preferred 20%, more preferably 10% be selected from a kind or 2 kinds of (D) group elements among Ni and the Mn.Ni and Mn are the element that is used to adjust saturation magnetic flux density in the Co alloy, if the total content of these elements is below 30%, then can obtain excellent magnetism.
According to preferred mode of the present invention, alloy also can contain a kind or 2 kinds of (E) group elements among Al and the Cu of being selected from below 5%.Al and Cu are the element that is used to improve erosion resistance in the Co alloy, if the total content of these elements is below 5%, then help amorphization.
According to preferred mode of the present invention, alloy also can contain below 10% be selected from Si, Ge, P, B, and C in a kind or 2 kinds of (F) group elements.Si, Ge, P, B and C are the element that improves amorphism in the Co alloy, if the total content of these elements is below 10%, then help amorphization.
Embodiment
Below, utilize embodiment that alloy of the present invention is carried out specific description.
As a rule, the sputtering target material that the film of perpendicular magnetic recording medium can be by sputter and its composition identical component, film forming are gone up in glass substrate etc. and are obtained.Here the film that utilizes spatter film forming is carried out chilling.Different with it, as for test materials, used the chilling strip made from the liquid quench device of mono-roller type in the present embodiment.Come to utilize easily to utilize in the liquid quench strip evaluation reality sputter to carry out the influence that causes by composition of the film forming film of chilling thus to each characteristic.
The manufacturing conditions of chilling strip
To be grouped in the water-cooled copper mould of raw material 30g about diameter 10 * 40mm of weighing with the one-tenth shown in table 1 and the table 2 and in decompression Ar, carry out arc-melting, make the fusing mother metal of chilling strip.The manufacturing conditions of chilling strip is, with single roller mode, this fusing mother metal is placed in the silica tube of diameter 15mm, to go out the soup nozzle diameter and be made as 1mm, carry out soup with rotating speed 3000rpm, the copper roller of atmosphere air pressure 61kPa, spraying pressure reduction 69kPa, copper roller (diameter 300mm) and the gap 0.3mm that goes out the soup nozzle.Going out the soup temperature is made as and respectively melts after just the burning of mother metal.The chilling strip so made as for test materials, has been estimated following project.
The evaluation of the saturation magnetic flux density of chilling strip
In VSM device (vibration sample type magnetometer) with the saturation magnetic flux density that magnetic field measuring goes out the chilling strip that applies of 1200kA/m.For the weight of test materials is about 15mg, for being made as zero more than the 0.3T and less than the sample of the saturation magnetic flux density of 0.8T, is made as ◎ for the sample more than the 0.8T.For the sample less than 0.3% be made as *.
The structure of chilling strip
As a rule, when measuring the X-ray diffractogram of non-crystalline material, can't see diffraction peak, be the distinctive dizzy figure of amorphous.In addition, under the situation that is not amorphous completely, though can see diffraction peak, compare the peak height step-down with crystalline material, and also can see dizzy figure.Carried out non-crystalline evaluation so utilize following method.
Non-crystalline evaluation
As non-crystalline evaluation, on sheet glass, attach for test materials with double sticky tape, utilize the X-ray diffraction device to obtain diffractogram.At this moment, so that the mensuration face is the mode of the copper roller contact surface of chilling strip attaches for test materials.X-ray source is the Cu-alpha-ray, measures with the sweep velocity of 4 °/min.What will can confirm dizzy figure in this diffractogram is made as zero, with can't see fully being made as of dizzy figure *, carried out non-crystalline evaluation.
The crystallized temperature of chilling strip
As a rule, non-crystalline material is accompanied by heating crystallization takes place, and the temperature that crystallization takes place is called crystallized temperature.In addition, when crystallization, also can cause thermopositive reaction.Crystallized temperature is to estimate by the temperature that mensuration is accompanied by the crystallization heat release.Estimated crystallized temperature so utilize following method.Utilize differential scanning calorimetric measurement (DSC) at rate of heating 0.67Ks
-1Condition under investigate.For being made as zero more than the 773K and less than the sample of 873 crystallized temperature, be made as ◎ for the crystallized temperature more than the 873K, for the sample less than the crystallized temperature of 773K be made as *.
The erosion resistance evaluation (NaCl) of chilling strip
On glass particle, to attach the chilling strip with double sticky tape sample, implemented salt spray testing (under 35 ℃, carrying out 16 hours) with the 5%NaCl aqueous solution, in this evaluation, will not see get rusty be made as zero, will see being made as of getting rusty *.
Erosion resistance (the HNO of chilling strip
3
)
The confession test materials of weighing 50mg, the 3at%HNO of dropping 10ml
3Behind the aqueous solution, at room temperature place 1hr after, analyze to 3%HNO
3Co stripping quantity in the aqueous solution.With the be made as ◎ of Co stripping quantity less than 500ppm, with more than 500 and less than 1000ppm be made as zero, with being made as more than the 1000ppm *.
And, since the one-tenth of table 1 be grouped in the Zr of for example No.9 of record be 10%, W is 5%, Mo is 5%, therefore (Co-30Fe) is 100%-20%, promptly 80%, this 80% had been made as 100 o'clock, then Co is that (100-30), Fe are 30 ratio.Mean that just Co is 56%, Fe is 24%.
Table 1
Sample No.33 shown in the table 1 is because (B) content of group element is low, so crystallized temperature is low.Sample No.34 is because (B) the content height of group element, so saturation magnetic flux density is low, and crystallized temperature is low.Sample No.35 is because (B) the total amount of group element is low, so crystallized temperature is low.Sample No.36 is not because therefore (B) the total amount height of group element has amorphization, and crystallized temperature is low.Sample No.37 is not owing to there is (A) group element, so amorphism is poor.
Sample No.38 is because (A) content of group element is low, so amorphism is poor.Sample No.39 is because (A) the content height of group element, so the amorphism deficiency, and because Fe content height, so the erosion resistance deficiency.Sample No.40 is owing to Fe content height, so the erosion resistance deficiency.Sample No.41 is because (A) content of group element is low, and therefore (A) group element is low with the total amount of (B) group element, so amorphism is poor.Sample No.42 is owing to (A) group element and (B) the total amount height of group element, so magnetic is low, and the amorphism deficiency.
The content height of (D) group element of sample No.43, magnetic is poor.Sample No.44 is owing to contain as semimetallic B, Si element, so the erosion resistance deficiency.Sample No.45 is because (B) content of group element is low, and (A) group element is low with the total amount of (B) group element, so the amorphism deficiency.Sample No.46 is not owing to contain Co and Fe, and do not contain (D) group element, is non magnetic therefore.Different with it, sample No.1～32 are owing to all satisfy condition of the present invention, therefore saturation magnetic flux density, amorphism excellence as can be known, crystallized temperature height, and excellent corrosion resistance.
Except above-mentioned example, also the sample with other is shown in the table 2.
Table 2
Sample No.26 is not because therefore Al content height has amorphization.Sample No.27 is not because therefore Cu content height has amorphization.Sample No.28 is not because therefore C content height has amorphization.Sample No.29 is not because therefore the total content height of B, Si, P has amorphization.Sample No.30 is owing to Ta content height, and Al content height, does not therefore have amorphization.Sample No.31 is owing to V content height, and Cu content height, does not therefore have amorphization.Sample No.32 is owing to Nb content height, and C content height, does not therefore have amorphization.Sample No.33 is not because therefore P content height has amorphization.Sample No.34 is not because therefore Ge content height has amorphization.
Below, provide the manufacture method of sputtering target material.Be grouped into for 12 kinds of one-tenth shown in sample No.33, the No.36 of sample No.1, No.3, No.4, No.5, No.8, No.13, No.18, No.23, No.27, No.32 and the table 1 of table 1, the weighing melt raw material, after in the refractory body crucible of decompression Ar gas atmosphere, carrying out the induction heating fusing, from the nozzle of the diameter 8mm of crucible bottom, go out soup, utilize Ar gas to carry out efflorescence.With this gas efflorescence powder as raw material, the degassing pack into external diameter 220mm, internal diameter 210mm, long 200mm the SC system jar in.Vacuum arrival degree during the degassing is made as about 1.3 * 10-2pa.Above-mentioned powder is filled after base is heated to 1150 ℃, in the contained type container of the diameter 230mm that packs into, utilize the press molding of 500MPa.The body that is solidified into that utilizes above-mentioned method to make is utilized line cutting, machined into, plane lapping, be processed as the discoid of diameter 180mm, thick 7mm, as sputtering target material.
These 12 kinds of one-tenth are grouped into the use sputtering target material, on glass substrate, form sputtered film.For X-ray diffractogram, sample No.1, No.3, No.4, No.5, No.8, No.13, No.18, No.23, No.27, No.32 can see dizzy figure, and sample No.33, No.36 have seen the crystal peak.In addition, similarly carried out the mensuration of crystallized temperature with the chilling strip, consequently, the crystallized temperature of sample No.1, No.3, No.4, No.5, No.8, No.13, No.18, No.23, No.27, No.32 demonstrates low to the temperature less than 773K all up to more than the 773K among sample No.33, the No.36.
Though in table, do not provide erosion resistance, be with the ◎ that comes to the same thing, zero that utilizes the evaluation of chilling strip, *.Also carried out the mensuration of magnetic properties in the same manner for magnetic properties with the chilling strip, consequently with the ◎ that comes to the same thing, zero that utilizes the evaluation of chilling strip, *.If summarize, then confirm to utilize the result and the equal tendency that is evaluated as of using the film forming sputtered film of sputtering target material of chilling strip evaluation to above.
In addition, be grouped into for sample No.26, the No.28 of sample No.1, No.3, No.5, No.7, No.11, No.15, No.18, No.24, No.25 and the table 2 of table 2,13 kinds of one-tenth shown in No.29, the No.33, the weighing melt raw material, after in the refractory body crucible of decompression Ar gas atmosphere, carrying out the induction heating fusing, from the nozzle of the diameter 8mm of crucible bottom, go out soup, utilize Ar gas to carry out efflorescence.With this gas efflorescence powder as raw material, the degassing pack into external diameter 220mm, internal diameter 210mm, long 200mm the SC system jar in.Vacuum arrival degree during the degassing is made as about 1.3 * 10-2pa.Above-mentioned powder is filled after baslled iron is heated to 1000 ℃, in the contained type container of the diameter 230mm that packs into, utilize the press molding of 500MPa.Utilize line cutting, machined into, plane lapping to be processed as the discoid of diameter 165mm, thick 6mm the body that is solidified into that utilizes above-mentioned method to make, as sputtering target material.
These 13 kinds of one-tenth are grouped into the use sputtering target material, on glass substrate, form sputtered film.For X-ray diffractogram, sample No.1, No.3, No.5, No.7, No.11, No.15, No.18, No.24, No.25 person can see dizzy figure, have seen the crystal peak in sample No.26, No.28, No.29, No.33.In addition, carried out the mensuration of crystallized temperature in the same manner with the chilling strip, consequently, the crystallized temperature of sample No.1, No.3, No.5, No.7, No.11, No.15, No.18, No.24, No.25 demonstrates low to the temperature less than 773K in sample No.33, No.36 all up to more than the 773K.
Though in table, do not provide erosion resistance, be with the ◎ that comes to the same thing, zero that utilizes the evaluation of chilling strip, *.Also carried out the mensuration of magnetic properties in the same manner for magnetic properties with the chilling strip, consequently with the ◎ that comes to the same thing, zero that utilizes the evaluation of chilling strip, *.If summarize, then confirm to utilize the result and the equal tendency that is evaluated as of using the film forming sputtered film of sputtering target material of chilling strip evaluation to above.
As mentioned above, according to the present invention, can provide the HAMR medium of guaranteeing saturation magnetic flux density, amorphism (amorphism), crystallized temperature height and excellent corrosion resistance especially with non-retentive alloy and the sputtering target material and the magnetic recording media that utilize this alloy to make.
Claims (9)
1. a magnetic recording non-retentive alloy is characterized in that,
In at%, comprise:
Fe：0～70％、
(A) 5～20% be selected from Ti, Zr, and Hf in the element more than a kind or 2 kinds,
(B) 0～30% be selected from Cr, Mo, and W in the element more than a kind or 2 kinds,
(C) 0～30% be selected from V, Nb, and Ta in the element more than a kind or 2 kinds,
(D) 0～30% be selected among Ni and the Mn a kind or 2 kinds of elements,
(E) 0～5% be selected among Al and the Cu a kind or 2 kinds of elements and
(F) 0～10% be selected from Si, Ge, P, B, and C in the element more than a kind or 2 kinds,
Co and unavoidable impurities are contained in surplus portion.
2. magnetic recording non-retentive alloy according to claim 1, wherein,
Described alloy is in at%, only by:
Fe：0～70％、
(A) 5～20% be selected from Ti, Zr, and Hf in the element more than a kind or 2 kinds,
(B) 0～30% be selected from Cr, Mo, and W in the element more than a kind or 2 kinds,
(C) 0～30% be selected from V, Nb, and Ta in the element more than a kind or 2 kinds,
(D) 0～30% be selected among Ni and the Mn a kind or 2 kinds of elements,
(E) 0～5% be selected among Al and the Cu a kind or 2 kinds of elements,
(F) 0～10% be selected from Si, Ge, P, B, and C in the element more than a kind or 2 kinds and
The Co of surplus portion and unavoidable impurities constitute.
3. magnetic recording non-retentive alloy according to claim 1 and 2, wherein,
Comprise the element of (B) group of 5～30at%, (A) Zu element is 10～35at% with the element sum of (B) organizing.
4. according to each described magnetic recording non-retentive alloy in the claim 1～3, wherein,
Comprising above 0% is the element of following (C) group of 30at%.
5. according to each described magnetic recording non-retentive alloy in the claim 1～4, wherein,
Comprising above 0% is the element of following (D) group of 30at%.
6. according to each described magnetic recording non-retentive alloy in the claim 1～5, wherein,
Comprising above 0% is the element of following (E) group of 5at%.
7. according to each described magnetic recording non-retentive alloy in the claim 1～6, wherein,
Comprising above 0% is the element of following (F) group of 10at%.
8. a sputtering target material is characterized in that,
Make with non-retentive alloy with each described magnetic recording in the claim 1～7.
9. a magnetic recording media is characterized in that,
Possesses the soft magnetic film made from non-retentive alloy with each described magnetic recording in the claim 1～7.
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010240184 | 2010-10-26 | ||
| JP2010-240184 | 2010-10-26 | ||
| JP2011092631A JP5714397B2 (en) | 2010-10-26 | 2011-04-19 | Soft magnetic alloy for magnetic recording, sputtering target material, and magnetic recording medium |
| JP2011-092631 | 2011-04-19 | ||
| PCT/JP2011/074448 WO2012057087A1 (en) | 2010-10-26 | 2011-10-24 | Soft magnetic alloy for magnetic recording, sputtering target material, and magnetic recording medium |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103221568A true CN103221568A (en) | 2013-07-24 |
| CN103221568B CN103221568B (en) | 2016-03-23 |
Family
ID=45993795
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201180051301.1A Expired - Fee Related CN103221568B (en) | 2010-10-26 | 2011-10-24 | Magnetic recording non-retentive alloy, sputtering target material and magnetic recording media |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JP5714397B2 (en) |
| CN (1) | CN103221568B (en) |
| MY (1) | MY182967A (en) |
| SG (1) | SG189986A1 (en) |
| TW (1) | TWI512120B (en) |
| WO (1) | WO2012057087A1 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103781933A (en) * | 2011-08-17 | 2014-05-07 | 山阳特殊制钢株式会社 | Alloy for soft-magnetic thin-film layer on perpendicular magnetic recording medium, and sputtering-target material |
| CN104388842A (en) * | 2014-12-02 | 2015-03-04 | 北京科技大学 | Fe-Cr-B system corrosion-resistant block amorphous alloy and preparation method thereof |
| CN105755356A (en) * | 2016-03-15 | 2016-07-13 | 梁梅芹 | Preparation method of iron-based nanocrystalline soft magnetic alloy |
| CN106415720A (en) * | 2014-05-01 | 2017-02-15 | 山阳特殊制钢株式会社 | Soft magnetic alloy for magnetic recording, sputtering target material and magnetic recording medium |
| CN107924689A (en) * | 2015-08-24 | 2018-04-17 | 山阳特殊制钢株式会社 | Non magnetic and amorphous alloy and the sputtering target material and magnetic recording media using the alloy |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101161854A (en) * | 2006-10-10 | 2008-04-16 | 日立金属株式会社 | Co-Fe-Zr based alloy sputtering target material and process for production thereof |
| WO2010007980A1 (en) * | 2008-07-14 | 2010-01-21 | 山陽特殊製鋼株式会社 | Alloys for soft magnetic film layers in vertical magnetic recording media, sputtering target materials and manufacturing method therefore |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62263945A (en) * | 1986-05-09 | 1987-11-16 | Victor Co Of Japan Ltd | Soft-magnetic alloy |
| JPH05267031A (en) * | 1992-02-14 | 1993-10-15 | Takeshi Masumoto | Magnetic core material |
| JP2856725B2 (en) * | 1997-05-26 | 1999-02-10 | 松下電器産業株式会社 | Method of forming soft magnetic alloy film |
| JP3182399B2 (en) * | 1997-09-17 | 2001-07-03 | 株式会社東芝 | Soft magnetic alloy film and manufacturing method thereof, magnetic head, and magnetic disk |
| JP2010111943A (en) * | 2008-10-10 | 2010-05-20 | Hitachi Metals Ltd | Method for producing sputtering target material |
| JP2010159491A (en) * | 2008-12-12 | 2010-07-22 | Hitachi Metals Ltd | Co-Fe-BASED ALLOY SPUTTERING TARGET MATERIAL |
| JP5617112B2 (en) * | 2010-01-14 | 2014-11-05 | 独立行政法人物質・材料研究機構 | Perpendicular magnetic recording medium and manufacturing method thereof |
| JP2011181140A (en) * | 2010-03-01 | 2011-09-15 | Hitachi Metals Ltd | Fe-Co BASED ALLOY SOFT MAGNETIC FILM FOR MAGNETIC RECORDING MEDIUM |
-
2011
- 2011-04-19 JP JP2011092631A patent/JP5714397B2/en not_active Expired - Fee Related
- 2011-10-24 SG SG2013031174A patent/SG189986A1/en unknown
- 2011-10-24 MY MYPI2013700669A patent/MY182967A/en unknown
- 2011-10-24 CN CN201180051301.1A patent/CN103221568B/en not_active Expired - Fee Related
- 2011-10-24 WO PCT/JP2011/074448 patent/WO2012057087A1/en active Application Filing
- 2011-10-26 TW TW100138891A patent/TWI512120B/en not_active IP Right Cessation
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101161854A (en) * | 2006-10-10 | 2008-04-16 | 日立金属株式会社 | Co-Fe-Zr based alloy sputtering target material and process for production thereof |
| WO2010007980A1 (en) * | 2008-07-14 | 2010-01-21 | 山陽特殊製鋼株式会社 | Alloys for soft magnetic film layers in vertical magnetic recording media, sputtering target materials and manufacturing method therefore |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103781933A (en) * | 2011-08-17 | 2014-05-07 | 山阳特殊制钢株式会社 | Alloy for soft-magnetic thin-film layer on perpendicular magnetic recording medium, and sputtering-target material |
| CN103781933B (en) * | 2011-08-17 | 2017-01-25 | 山阳特殊制钢株式会社 | Alloy for soft-magnetic thin-film layer on perpendicular magnetic recording medium, and sputtering-target material |
| CN106415720A (en) * | 2014-05-01 | 2017-02-15 | 山阳特殊制钢株式会社 | Soft magnetic alloy for magnetic recording, sputtering target material and magnetic recording medium |
| CN106415720B (en) * | 2014-05-01 | 2019-04-12 | 山阳特殊制钢株式会社 | Magnetic recording non-retentive alloy and sputtering target material and magnetic recording media |
| CN104388842A (en) * | 2014-12-02 | 2015-03-04 | 北京科技大学 | Fe-Cr-B system corrosion-resistant block amorphous alloy and preparation method thereof |
| CN104388842B (en) * | 2014-12-02 | 2016-08-24 | 北京科技大学 | A kind of Fe-Cr-B system corrosion block non-crystaline amorphous metal and preparation method thereof |
| CN107924689A (en) * | 2015-08-24 | 2018-04-17 | 山阳特殊制钢株式会社 | Non magnetic and amorphous alloy and the sputtering target material and magnetic recording media using the alloy |
| TWI683010B (en) * | 2015-08-24 | 2020-01-21 | 日商山陽特殊製鋼股份有限公司 | Non-magnetic and amorphous alloy, sputtering target material and magnetic recording medium using the alloy |
| CN105755356A (en) * | 2016-03-15 | 2016-07-13 | 梁梅芹 | Preparation method of iron-based nanocrystalline soft magnetic alloy |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201231689A (en) | 2012-08-01 |
| TWI512120B (en) | 2015-12-11 |
| MY182967A (en) | 2021-02-05 |
| CN103221568B (en) | 2016-03-23 |
| JP2012108997A (en) | 2012-06-07 |
| JP5714397B2 (en) | 2015-05-07 |
| WO2012057087A1 (en) | 2012-05-03 |
| SG189986A1 (en) | 2013-06-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103221999B (en) | The inculating crystal layer alloy of magnetic recording media and sputtering target material | |
| CN103221568B (en) | Magnetic recording non-retentive alloy, sputtering target material and magnetic recording media | |
| TW201239922A (en) | Soft magnetic alloy for magnetic recording, sputtering target material and magnetic recoding medium | |
| TWI558831B (en) | An alloy and a sputtering target for a soft magnetic film layer of a vertical magnetic recording medium | |
| JP5305137B2 (en) | Ni-W sintered target material for forming Ni alloy intermediate layer of perpendicular magnetic recording medium | |
| CN104488029B (en) | Magnetic recording non-retentive alloy and sputtering target material and magnetic recording media | |
| CN103098135A (en) | Soft magnetic alloy for magnetic recording medium, sputtering target material, and magnetic recording medium | |
| TWI604078B (en) | Perpendicular magnetic recording medium, soft magnetic film layer alloy, sputtering target, and perpendicular magnetic recording medium having a soft magnetic film layer | |
| JP2013084322A (en) | Soft magnetic film for thermally assisted magnetic recording medium and manufacturing method therefor | |
| TWI683010B (en) | Non-magnetic and amorphous alloy, sputtering target material and magnetic recording medium using the alloy | |
| JP2011181140A (en) | Fe-Co BASED ALLOY SOFT MAGNETIC FILM FOR MAGNETIC RECORDING MEDIUM | |
| JP6502672B2 (en) | Alloy for seed layer of Ni-Cu based magnetic recording medium, sputtering target material and magnetic recording medium | |
| JP2017082330A (en) | CoFe-BASED ALLOY FOR SOFT MAGNETIC FILM LAYER IN PERPENDICULAR MAGNETIC RECORDING MEDIUM AND SPUTTERING TARGET MATERIAL | |
| JP4465711B2 (en) | GaSb phase change recording film for producing phase change recording medium excellent in storage stability of recording mark and sputtering target for forming this recording film | |
| JP2020135907A (en) | Spattering target for forming soft magnetic layer of perpendicular magnetic recording medium, and perpendicular magnetic recording medium, and soft magnetic layer thereof | |
| JP2007293966A (en) | Gesb-based phase-change recording film excellent in storage stability of recording mark and spattering target for forming the gesb-based phase-change recording film | |
| JP2019096372A (en) | Adhesion layer for heat-assisted magnetic recording medium and spattering target for forming adhesion layer of heat-assisted magnetic recording medium | |
| JP2013011018A (en) | Alloy target material for soft magnetic film layer in perpendicular magnetic recording medium |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160323 Termination date: 20211024 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |