CN103219371A - Trench gate type insulated gate bipolar translator (IGBT) with double-face diffusion residual layer and manufacturing method thereof - Google Patents
Trench gate type insulated gate bipolar translator (IGBT) with double-face diffusion residual layer and manufacturing method thereof Download PDFInfo
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Abstract
The invention discloses a trench gate type insulated gate bipolar translator (IGBT) with a double-face diffusion residual layer and a manufacturing method thereof. The IGBT comprises an N-type base region, a P-type base region, a back P+ collector region, an N+ emitter region, a P+ emitter region, a gate oxide layer, an emitter, a gate electrode and a collector. The N-type base region is composed of an N+ diffusion residual layer, an N- drift region and an N+ buffer layer, wherein the N-type diffusion residual layer, the N- drift region and the N+ buffer layer are stacked up in sequence. The P-type base region is located on the N+ diffusion residual layer. Doping concentration gradually increases outwards from a boundary of the N- drift region with the N+ diffusion residual layer and the N+ buffer layer. The manufacturing method of the IGBT is characterized in that the non-uniform doped N+ layers are formed on the front face and the back face through one-time double-face high temperature deep junction diffusion at the same time, the N+ diffusion residual layer is formed on the front face of the N- drift region, so that the ion doping concentration of the N-type front face is improved, and a conductivity modulation effect is strengthened. The N+ buffer region on the back face can reduce breakover voltage drop of a device, and the turn-off time of the device is prolonged. The manufacturing method can reduce the steps of manufacturing the IGBT, and reduce the cost.
Description
Technical field
The present invention relates to semiconductor power device and manufacture field, especially relate to a kind of type of the trench gate with Double side diffusion residual layer IGBT structure and manufacture method thereof.
Background technology
IGBT is that insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, be called for short IGBT) is the semiconductor power device of the low on-resistance characteristic of a kind of gate electrode voltage control characteristic that integrates metal oxide semiconductor field effect tube (MOSFET) and bipolar junction transistor (BJT).There is voltage control, input impedance is large, driving power is little, conducting resistance is little, switching loss is low and the characteristic such as operating frequency height, is more satisfactory semiconductor power switch device, and wide development and application prospect are arranged.
High concentration resilient coating according to whether existing between drift region and collector electrode (terminology electrode and anode often exchange use) in the IGBT structure with drift region same concentrations type, can be divided into punch (PT-IGBT) and non-punch (NPT-IGBT) two kinds of structures to IGBT.The PT-IGBT type has buffer layer structure, and NPT-IGBT does not have buffer layer structure.General PT-IGBT refers to form at the top of the high concentration resilient coating of same concentrations type by epitaxial deposition low concentration Uniform Doped extension as drift region, and extension is that to be deposited on the silicon substrate of contrary concentration of type upper outside.The forward blocking voltage of IGBT (also can referred to as withstand voltage) is determined by doping content and the thickness of drift region, the IGBT that forward blocking voltage is high needs very thick drift region, as forward blocking voltage more than 1000V required drift region thickness more than 100um, use the deposition technique difficulty of thick-layer extension very large, and the cost of manufacturing is very high, be difficult to realize.And first make Facad structure on the single crystalline substrate of the low concentration doping that NPT-IGBT is the thickness at Uniform Doped is hundreds of microns, and then to the substrate slice back side, adopt the method attenuates such as grinding, corrosion to make drift region can meet the required thickness of forward blocking voltage, then form the collector electrode of the contrary concentration of type in the back side by the method for Implantation and activation.It does not need the epitaxial loayer that deposition is very thick, therefore be applicable to manufacturing the IGBT of high forward blocking voltage, but owing to there is no resilient coating, when bearing forward blocking voltage, the depletion layer that reversed bias voltage forms need to be ended in drift region, otherwise will form punch-through breakdown, reduce forward blocking voltage, and use resilient coating can make depletion layer end at resilient coating, therefore reach the identical required drift region of forward blocking voltage, NPT-IGBT need to be thicker than PT-IGBT drift region, its forward conduction voltage drop is also larger than the PT-IGBT reached under identical forward blocking voltage, thereby current capacity is also relatively less better.And for manufacturing the IGBT of forward blocking voltage in 1000～2000V left and right, the thickness of its drift region is mostly one or two hundred microns left and right, process device on so thin thin silicon sheet, its manufacture difficulty is quite large, if do not do expensive equipment improvement for the equipment of producing in enormous quantities at present, will not produce very high fragment ratio.
The Chinese patent that notification number is CN1138307C discloses the structure that a kind of IGBT is new.Its manufacture method is first by High temperature diffusion, on N-substrate slice two sides, to carry out the dark knot diffusion of N+, then grind off diffusion layer on one side, do Facad structure thereon, grind again afterwards the back side, the diffusion layer that retains the back side arrives required thickness as the N+ resilient coating, then on this N+ resilient coating, does Implantation and forms back of the body P+ anode region.The IGBT of this kind of structure have simultaneously characteristics that the PT-IGBT on-state voltage drop is little and NPT-IGBT switching time short characteristics.This invents structure of IGBT and preparation method thereof is innovated, soft break-through IGBT(SPT-IGBT with ABB AB's proposition) the light break-through IGBT(LPT-IGBT that structure and Mitsubishi Electric Corporation propose) structure has similarity, can effectively reduce device power consumption, but for Facad structure, still with conventional method, complete, not innovation.
Facad structure from IGBT, no matter be planar gate type or groove grating structure, due to when forward is worked, the minority carrier that is injected into drift region from backside collector reduces gradually in concentration to front emitter (term emitter and negative electrode often exchange use) motion process, approach like this emitter in front, it is more weak that electricity is led modulating action, resistance is larger, for reducing to greatest extent the resistance on nearly surface, reduce forward conduction voltage drop, need to take measures to improve the carrier concentration of nearly surface, one deck doping content charge carrier accumulation layer slightly denseer than N-type drift region formed between YuNXing drift region, P type base of describing in the IEEE publication 0-7803-3106-0/96 that is entitled as " Carrier Stored Trench-Gate Bipolar Transistor (CSTBT)-A Novel Power Device for High Voltage Application " (charge carrier storage-type trench gate bipolar transistor-a kind of novel high voltage power device) shown as Mitsubishi H.Takahashi etc., the potential barrier that itself and N-type drift region form can allow minority carrier assemble at this in P type base motion process, being subject to this potential barrier again, therefore make this regional carrier concentration improve, improve electricity and lead modulating action, conduction voltage drop is reduced, current capacity rises, the plane enhancement layer of describing in the IEEE publication 1-4244-9715-0/06 that is entitled as " Novel Enhanced-Planar IGBT Technology Rated up to6.5kV for Lower Losses and Higher SOA Capapbility " (can obtain the novel planar enhancement mode IGBT manufacturing technology of the rated voltage of more low-power consumption and Geng Gao safety operation area up to 6.5kV) that and for example M.Rahimo of ABB AB etc. shows plays a part identical with the charge carrier accumulation layer.But be that charge carrier accumulation layer or plane enhancement layer are all in the IGBT manufacture process, when forming positive MOSFET structure, extra increase processing step forms, and the increase of its processing step must make manufacturing cost rise.
Summary of the invention
The invention provides a kind of type of the trench gate with Double side diffusion residual layer IGBT and manufacture method thereof, it is diffused in front by the dark knot of a step high temperature and forms the diffusion residual layer with both sides, the back side simultaneously, again by techniques such as attenuates, positive diffusion residual layer can play the effect that positive carrier concentration is improved, the diffusion residual layer at the back side forms resilient coating, makes IGBT have the feature of punch device.
A kind of type of the trench gate with Double side diffusion residual layer IGBT, comprise N-type base, P type base, back of the body P+ collector area, N+ emitter region, P+ emitter region, gate oxide, emitter, gate electrode and collector electrode; Described N-type base is comprised of the N+ diffusion residual layer, N-drift region and the N+ resilient coating that stack gradually, P type base is positioned on N+ diffusion residual layer, N+ emitter region, P+ emitter region are positioned on P type base, groove is positioned at N+ diffusion residual layer and both sides, P type base, described groove has along its sidewall, the gate oxide of end and bottom and be included in the gate electrode in gate oxide; Back of the body P+ collector area is positioned under the N+ resilient coating, and collector electrode is positioned under back of the body P+ collector area; Initial outside doping content increases gradually from the border with the N-drift region for N+ diffusion residual layer and N+ resilient coating.
Described N-drift region is the doping content constant region that silicon single crystal body forms, and its thickness and doping content are by the forward blocking voltage decision of IGBT, and forward blocking voltage and thickness positive correlation, with the doping content negative correlation.
Described N+ buffer layer thickness is preferably 10～50um, and too thick meeting raises conduction voltage drop, and too thin electric field termination effect deficiency can cause forward blocking voltage to reduce.Described N+ resilient coating and doping content and the positive correlation of N+ buffer layer thickness of carrying on the back P+ collector area interface.Because the existence of N+ resilient coating can make the N-drift region thinner when reaching identical forward blocking voltage, so conduction voltage drop also can be lower.
Described N+ diffusion residual layer, if thickness is little, the impurity doping content on surface will be lower, it is lower with the potential barrier that the N-drift region forms, electricity lead modulating action just a little less than, conduction voltage drop decline is lower; If N+ diffusion residual layer is thicker, the doping content on surface is higher, and the potential barrier that itself and N-drift region form is higher, it is just stronger that electricity is led modulating action, can make conduction voltage drop descend more, but this also can cause the reduction of forward blocking voltage, so the thickness of N+ diffusion residual layer thickness is advisable with 3～15um.
The PN junction that described N+ diffusion residual layer and described P type base form is linear graded junction, and it is favourable to improving device withstand voltage.The PN junction that described N+ diffusion residual layer and described P type base form has deep structure, this because of N+ diffusion residual layer due to be through deep diffusion again attenuate remain, therefore it has the dark knot speciality favourable to the raising device withstand voltage with the PN junction that P type base forms.In the situation that N+ diffusion residual layer has linear gradual and deep structure, N+ diffusion residual layer is little on the impact of forward blocking voltage, and in the situation that increase same collector current, the reduction meeting of forward blocking voltage is little a lot.Controlled and the stability of simultaneously deeply tying, the collector current of device and forward blocking voltage are little with the discrete fluctuation of technique.
The present invention also provides the manufacture method of the above-mentioned type of the trench gate with Double side diffusion residual layer IGBT.This manufacture method is easy, and the rising that is conducive to reduce production costs, while can increase the current capacity of device on the basis of not obvious reduction forward blocking voltage.
The manufacture method of a kind of type of the trench gate with Double side diffusion residual layer IGBT comprises:
(1) deeply tie diffusion in the both sides of n type single crystal silicon by two-sided high temperature once and form the first diffusion region and the second diffusion region simultaneously;
(2) respectively reduction process formation N+ diffusion residual layer and N+ resilient coating are carried out in the first diffusion region and the second diffusion region;
(3) form P type base, N+ emitter region, P+ emitter region on N+ diffusion residual layer, emitter, groove is positioned at N+ diffusion residual layer and both sides, P type base, form successively along trenched side-wall the gate oxide of end and bottom and be included in the gate electrode in gate oxide in the groove of N+ diffusion residual layer and both sides, P type base;
(4) form back of the body P+ collector area by injecting ion and activating on the N+ resilient coating, after the metallization of back of the body P+ collector area, form collector electrode.
A described N+ diffusion region and the 2nd N+ diffusion region are N+ non-uniform doping districts.For the first diffusion region, can form N+ diffusion residual layer after attenuate due to it, its non-uniform doping is remaining error and distributes, and has advantages of when increasing surface impurity concentration very little on the impact of forward blocking voltage.For the 2nd N+ diffusion region, form the N+ resilient coating through attenuate, can make electric field under the forward blocking state stop hereinto, therefore, under the forward blocking voltage same case, the N-drift region can reduce, and conduction voltage drop is reduced, and current capacity promotes.
Trench gate type IGBT of the present invention, because its special manufacture method: N+ diffusion residual layer and N+ resilient coating are deeply to tie diffusion at the two-sided high temperature of same step, and the diffusion residual layer structure formed through attenuate respectively; N+ diffusion residual layer on the N-drift region, the potential barrier formed with the N-drift region has improved the foreign ion doping content in front, N-type base, forms stronger electricity and leads modulating action, thereby effectively reduce the conduction voltage drop of IGBT, improves the current capacity of IGBT.Simultaneously, the N+ diffusion residual layer formed due to this manufacture method has linear gradual and deep structure, little on the impact of forward blocking voltage, and in the situation that increase same collector current, the reduction meeting of forward blocking voltage is little a lot.Controlled and the stability of simultaneously deeply tying, the collector current of device and forward blocking voltage are little with the discrete fluctuation of technique.
The N+ of trench gate type IGBT of the present invention in front, N-drift region spreads residual layer by first High temperature diffusion, by reduction process such as grinding, polishings, form again, these all belong to original normal process, do not need additionally to increase processing step and form, and can make manufacturing cost reduce.And the diffusion residual layer at the back side is forming the N+ resilient coating after reduction process, the N+ resilient coating can make the thickness of IGBT required N-drift region when reaching identical forward blocking voltage less, therefore the conduction voltage drop of device can reduce, current capacity can rise, and the turn-off time also can be improved.
Trench gate type IGBT of the present invention is diffused in front by a dark knot of high temperature and forms the N+ layer of non-uniform doping with the back side simultaneously, and carries out respectively attenuate, forms two-sided diffusion residual layer structure, i.e. positive N+ diffusion residual layer and the N+ resilient coating at the back side.In front, use the structure of N+ diffusion residual layer effectively to reduce conduction voltage drop, collector current is improved, can drop to very lowly simultaneously on the impact of IGBT device forward blocking voltage, the consistency of properties of product also improves.N+ resilient coating overleaf reduces the break-over of device pressure drop, improves the device turn-off time.The manufacture method of this IGBT of the present invention is owing to can generate N+ diffusion residual layer the structure positive and back side simultaneously, only need reduction process can generate positive diffusion residual layer and back side resilient coating, reduce the step of whole technological process, made total manufacturing cost be minimized.Thereby there is higher industrial applicibility.
The accompanying drawing explanation
The cross-sectional view that Fig. 1 is IGBT of the present invention;
Fig. 2 a～Fig. 2 g is that IGBT manufacture process of the present invention is illustrated each section of structure;
Wherein, the profile that Fig. 2 a is original N-type silicon chip;
Fig. 2 b is that silicon chip shown in Fig. 2 a is tied the profile after diffusion forms two diffusion regions simultaneously deeply through a high temperature;
Fig. 2 c is the profile of front side of silicon wafer diffusion region shown in Fig. 2 b after attenuate processing;
Fig. 2 d is the profile after silicon chip shown in Fig. 2 c forms the IGBT Facad structure;
Fig. 2 e is the structural representation after the attenuate processing of silicon chip back side diffusion region shown in Fig. 2 d;
Fig. 2 f is that silicon chip back side shown in Fig. 2 e injects ion and activates the rear profile that forms back of the body P+ anode region;
Fig. 2 g is the profile after the back of the body of silicon chip shown in Fig. 2 f P+ anode region back face metalization forms anode;
Fig. 3 is the affect comparison diagram of positive residual layer thickness on forward blocking voltage and collector current.
Embodiment
As shown in Figure 1, a kind of type of the trench gate with Double side diffusion residual layer IGBT, comprise N-type base, P type base 29, back of the body P+ collector area 21, N+ emitter region 26, P+ emitter region 27, gate oxide 24, emitter 28, gate electrode 25 and collector electrode 20, wherein the N-type base is stacked gradually and is formed by N+ diffusion residual layer 30, N-drift region 23 and N+ resilient coating 22, this IGBT manufacture process is as shown in Figure 2, specific as follows:
Crystal orientation as shown in Figure 2 a is<100>N-type single crystalline substrate 31, its doping content is 4.3 * 10
13cm
-3, thickness is 500um, according to forward blocking voltage, is withstand voltage needs (such as 1700V, lower same), capable of regulating doping content to 1 * 10
13～2 * 10
14cm
-3.
As shown in Figure 2 b, the N-type single crystalline substrate forms a 32,N-drift region, N+ diffusion region 23 and the 2nd N+ diffusion region 33 stacked gradually after once two-sided high temperature is tied diffusion deeply, wherein N-drift region 23 thickness are adjustable to 100～300um according to the requirement of forward blocking voltage, and a N+ diffusion region 32 and the 2nd N+ diffusion region 33 are non-uniform doping.
As shown in Figure 2 c, it is N+ diffusion residual layer 30 that a N+ diffusion region 32 forms positive diffusion residual layer after the attenuates such as grinding and polishing, and this layer thickness is controlled within several microns and (is advisable between 3～15um).Attenuate back substrate thickness is not less than 300um, can guarantee that post-production is difficult for fragment.
As shown in Figure 2 d, at N+, spread on residual layer 30 first by oxidation, the boron Implantation, the processing steps such as diffusion form P type base 29, then on its surface by oxidation, boron Implantation and oxidation, arsenic injects, process annealing forms respectively P+ emitter region 27 and N+ emitter region 26 again, then carry out the photoetching of groove, etchings etc. form groove, form gate oxide 24 by oxidation, then on gate oxide 24, depositing polysilicon forms gate electrode 25, polysilicon beyond etching groove again, by oxide, isolated, finally again by photoetching, etching is depositing metal formation emitter 28 on N+ emitter region 26 and P+ emitter region 27 afterwards, the Facad structure of IGBT has just formed like this.
As shown in Fig. 2 e, 2f and 2g, the 2nd N+ diffusion region 33 forms the diffusion residual layer at the back side after the attenuates such as grinding back surface and polishing, and the N+ resilient coating 22, B Implanted on N+ resilient coating 22, and activate to form and carry on the back P+ anode region 21, form anode 20 after depositing metal on P+ anode region 21.
To the trench gate type IGBT device of being done with top embodiment manufacturing process, under definite area, different front diffusion residual layer 30 thickness and relatively see Fig. 3 without front diffusion residual layer (being that residual layer thickness is 0um) device forward blocking voltage and collector current.Forward blocking voltage and collector current when in figure, the Far Left of two curves a bit is without the diffusion residual layer, can see that forward blocking voltage now is 2068V, and collector current is 344A; And, when positive residual layer thickness is 8um, forward blocking voltage is 2044V, collector current is 366A.From comparative result, can find out, with the IGBT that there is no positive diffusion residual layer, compare, forward blocking voltage has only reduced approximately 1% left and right when the front residual layer is 8um, and collector current has increased 22A, increasing degree surpasses 6%, has effectively improved the performance of device.This is that in the N-drift region, the positive N+ formed spreads residual layer due to this IGBT, is linear gradual deep structure, therefore much smaller on the impact of device forward blocking voltage.As can be seen from Fig. 3, in the situation that the diffusion residual layer is less than 8um, forward blocking voltage descends seldom.Therefore, its controlled and stability of residual layer technology is also fine, injects the technological fluctuation of the degree of depth or residual layer thickness, smaller on electric current and the withstand voltage properties impact of device.
Claims (8)
1. the type of the trench gate with a Double side diffusion residual layer IGBT, comprise N-type base, P type base, back of the body P+ collector area, N+ emitter region, P+ emitter region, gate oxide, emitter, gate electrode and collector electrode; It is characterized in that: described N-type base is comprised of the N+ diffusion residual layer, N-drift region and the N+ resilient coating that stack gradually, P type base is positioned on N+ diffusion residual layer, N+ emitter region, P+ emitter region are positioned on P type base, groove is positioned at N+ diffusion residual layer and both sides, P type base, described groove has along its sidewall, the gate oxide of end and bottom and be included in the gate electrode in gate oxide; Back of the body P+ collector area is positioned under the N+ resilient coating, and collector electrode is positioned under back of the body P+ collector area; Initial outside doping content increases gradually from the border with the N-drift region for N+ diffusion residual layer and N+ resilient coating.
2. the type of the trench gate with Double side diffusion residual layer IGBT according to claim 1 is characterized in that: the thickness of described N+ diffusion residual layer is 3～15um.
3. the type of the trench gate with Double side diffusion residual layer IGBT according to claim 1, it is characterized in that: described N+ buffer layer thickness is 10～50um.
4. the type of the trench gate with Double side diffusion residual layer IGBT according to claim 1, it is characterized in that: described N-drift region is the doping content constant region.
5. the type of the trench gate with Double side diffusion residual layer IGBT according to claim 1 is characterized in that: described N+ diffusion residual layer is linear graded junction with the PN junction of described P type base formation.
6. the type of the trench gate with Double side diffusion residual layer IGBT according to claim 1 is characterized in that: described N+ diffusion residual layer has deep structure with the PN junction of described P type base formation.
7. the manufacture method of the type of the trench gate with Double side diffusion residual layer IGBT according to claim 1, is characterized in that, comprising:
(1) form a N+ diffusion region and the 2nd N+ diffusion region in the n type single crystal silicon both sides by two-sided High temperature diffusion once simultaneously;
(2) respectively attenuate is carried out in a N+ diffusion region and the 2nd N+ diffusion region and be processed to form N+ diffusion residual layer and N+ resilient coating;
(3) form P type base, N+ emitter region, P+ emitter region on N+ diffusion residual layer, emitter, groove is positioned at N+ diffusion residual layer and both sides, P type base, form successively along trenched side-wall the gate oxide of end and bottom and be included in the gate electrode in gate oxide in the groove of N+ diffusion residual layer and both sides, P type base;
(4) form back of the body P+ collector area by injecting ion and activating on the N+ resilient coating, after the metallization of back of the body P+ collector area, form collector electrode.
8. the manufacture method of the type of the trench gate with Double side diffusion residual layer IGBT according to claim 7, it is characterized in that: a described N+ diffusion region and the 2nd N+ diffusion region are N+ non-uniform doping districts.
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| CN112951907A (en) * | 2021-01-26 | 2021-06-11 | 陕西半导体先导技术中心有限公司 | Power semiconductor device structure capable of reducing on-resistance and preparation method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0746040A1 (en) * | 1995-05-31 | 1996-12-04 | Co.Ri.M.Me. Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno | Improved IGBT device |
| US6221721B1 (en) * | 1996-02-12 | 2001-04-24 | Mitsubishi Denki Kabushiki Kaisha | Method of manufacturing an insulated trench gate semiconductor device |
| CN101976683A (en) * | 2010-09-25 | 2011-02-16 | 浙江大学 | Insulated gate bipolar transistor and manufacturing method thereof |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0746040A1 (en) * | 1995-05-31 | 1996-12-04 | Co.Ri.M.Me. Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno | Improved IGBT device |
| US6221721B1 (en) * | 1996-02-12 | 2001-04-24 | Mitsubishi Denki Kabushiki Kaisha | Method of manufacturing an insulated trench gate semiconductor device |
| CN101976683A (en) * | 2010-09-25 | 2011-02-16 | 浙江大学 | Insulated gate bipolar transistor and manufacturing method thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112951907A (en) * | 2021-01-26 | 2021-06-11 | 陕西半导体先导技术中心有限公司 | Power semiconductor device structure capable of reducing on-resistance and preparation method thereof |
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