CN103219305A - Salient point bottom protection structure - Google Patents
Salient point bottom protection structure Download PDFInfo
- Publication number
- CN103219305A CN103219305A CN2013101370919A CN201310137091A CN103219305A CN 103219305 A CN103219305 A CN 103219305A CN 2013101370919 A CN2013101370919 A CN 2013101370919A CN 201310137091 A CN201310137091 A CN 201310137091A CN 103219305 A CN103219305 A CN 103219305A
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- China
- Prior art keywords
- salient point
- protection structure
- layer
- thrust
- aluminium lamination
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Laminated Bodies (AREA)
- Electroplating Methods And Accessories (AREA)
Abstract
The invention discloses a salient point bottom protection structure which comprises a salient point. Protruding objects are arranged on the periphery of the bottom portion of the salient point, and the materials of the protruding objects are identical to the materials of the salient point. A salient point lower metal layer is arranged on the bottom portion of the salient point, an aluminum layer is arranged on the lower portion of the salient point lower metal layer, and a silicon wafer is arranged on the lower portion of the aluminum layer. Due to the fact that the protruding objects are arranged on the bottom portion of the salient point, the protruding objects have the function of compensation in a wet etching process, the probability of occurrence of lateral erosion is reduced, and therefore a reliable salient point packaging structure is formed.
Description
Technical field
The present invention relates to the semiconductor packages field, be specifically related to a kind of salient point bottom protection structure.
Background technology
In the common salient point processing technology, when sputtering layer uses wet method to carry out etching,, when lateral erosion is excessive, can cause soup to attack the aluminium lamination of bottom, cause electrical loss because the side etching that isotropic causes is a problem all the time.Existing method reduces the lateral etch amount by the cooperation of etching machines and liquid medicine.Existing method exists operation to be difficult to control, cooperates and still has the excessive problem of lateral erosion when bad.
Summary of the invention
Provide hereinafter about brief overview of the present invention, so that basic comprehension about some aspect of the present invention is provided.Should be appreciated that this general introduction is not about exhaustive general introduction of the present invention.It is not that intention is determined key of the present invention or pith, neither be intended to limit scope of the present invention.Its purpose only is to provide some notion with the form of simplifying, with this as the preorder in greater detail of argumentation after a while.
The purpose of the embodiment of the invention is the defective at above-mentioned prior art, and a kind of salient point bottom protection structure that reduces the generation of lateral erosion is provided.
To achieve these goals, the technical scheme taked of the present invention is:
A kind of salient point bottom protection structure comprises salient point, and the bottom periphery of described salient point is provided with thrust.
Compared with prior art, the invention has the beneficial effects as follows:
The present invention is by being provided with thrust in the salient point bottom, and thrust plays the effect of compensation when wet etching, reduce the generation of lateral erosion, thereby forms salient point encapsulating structure more reliably.
Description of drawings
In order to be illustrated more clearly in the embodiment of the invention or technical scheme of the prior art, to do to introduce simply to the accompanying drawing of required use in embodiment or the description of the Prior Art below, apparently, accompanying drawing in describing below only is some embodiments of the present invention, for those of ordinary skills, under the prerequisite of not paying creative work, can also obtain other accompanying drawing according to these accompanying drawings.
The structural representation of salient point bottom protection structure before the etching that Fig. 1 provides for the embodiment of the invention;
The structural representation of salient point bottom protection structure after the etching that Fig. 2 provides for the embodiment of the invention.
Reference numeral:
The 1-salient point; The 2-thrust; The 3-ubm layer; The 4-aluminium lamination; The 5-silicon chip; The 6-passivation layer; The 7-protective layer; The 8-nickel dam; 9-tin layer.
Embodiment
For the purpose, technical scheme and the advantage that make the embodiment of the invention clearer, below in conjunction with the accompanying drawing in the embodiment of the invention, technical scheme in the embodiment of the invention is clearly and completely described, obviously, described embodiment is the present invention's part embodiment, rather than whole embodiment.Element of describing in an accompanying drawing of the present invention or a kind of execution mode and feature can combine with element and the feature shown in one or more other accompanying drawing or the execution mode.Should be noted that for purpose clearly, omitted the parts that have nothing to do with the present invention, those of ordinary skills are known and the expression and the description of processing in accompanying drawing and the explanation.Based on the embodiment among the present invention, those of ordinary skills belong to the scope of protection of the invention not paying the every other embodiment that is obtained under the creative work prerequisite.
Referring to Fig. 1, a kind of salient point bottom protection structure comprises salient point 1, and the bottom periphery of salient point 1 is provided with thrust 2.
The present invention is by being provided with thrust in the salient point bottom, and thrust plays the effect of compensation when wet etching, reduce the generation of lateral erosion, thereby forms salient point encapsulating structure more reliably.
Present embodiment is on the basis of the foregoing description, and the material of thrust 2 is identical with the material of salient point 1.
Identical material is set is convenient to the setting of thrust.
Present embodiment is on the basis of the foregoing description, and thrust 2 once forms in electroplating process with salient point 1, and thrust 2 is the truncated cone-shaped of hollow, is looped around the bottom periphery of salient point 1.
Thrust is identical with the salient point material, can in electroplating process, once form, be convenient to processing, the vacant part in the centre of truncated cone-shaped is used to hold salient point and UMB(ubm layer), the cross section of thrust can be a triangle as depicted in figs. 1 and 2, the gradient structure of similar gusseted, also can be trapezoidal, the thrust that said structure is set reduces lateral erosion, increases stability of structure.
Present embodiment is on the basis of the foregoing description, and salient point 1 bottom is provided with ubm layer 3, and ubm layer 3 bottoms are provided with aluminium lamination 4, and aluminium lamination 4 bottoms are provided with silicon chip 5.
By thrust is set, when wet etching, effectively prevented the aluminium lamination of soup attack bottom, cause electrical loss.
Present embodiment is on the basis of the foregoing description, also comprise passivation layer 6, aluminium lamination 4 extends to beyond ubm layer 3 bottoms, silicon chip 5 extends to beyond aluminium lamination 4 bottoms, passivation layer 6 covers on the silicon chip 5, and extends to successively on aluminium lamination 4 peripheries, the ubm layer 3 bottoms aluminium lamination 4 in addition and between aluminium lamination 4 and the part ubm layer 3.In structure of the present invention passivation layer can also be set, passivation layer 6 is silica or silicon nitride.
Present embodiment can also be provided with protective layer 7 on passivation layer 6 on the basis of the foregoing description.Protective layer 7 is preferably polyimide layer.
Present embodiment is on the basis of the foregoing description, and ubm layer is exposed in the bottom of described salient point, and the lower surface of described thrust is positioned on the described protective layer, and the side of described thrust is exposed ubm layer with described bottom and covered.
The ubm layer that thrust of the present invention is exposed with sidepiece covers, and prevents from the aluminium lamination of bottom is caused corrosion, causes electrical loss.
Present embodiment is on the basis of the foregoing description, and salient point 1 comprises the copper post.Salient point of the present invention can be the copper post, also can be the salient point of other materials, and the material of thrust also is a copper, and certainly, the material of thrust also can be different with the material of salient point, can be nickel, tin, lead etc., plays the effect of protection bottom aluminum layer equally.
Present embodiment is on the basis of the foregoing description, and the copper post is provided with nickel dam 8, and nickel dam 8 is provided with tin layer 9 or sn-ag alloy layer.
On the copper post of the present invention nickel dam can be set, nickel dam is used for preventing that the intermetallic compound that produces fragility because of diffusion from influencing reliability, and tin layer on the nickel dam or sn-ag alloy layer finally are used for welding.
Referring to Fig. 2, behind wet etching, before the thrust of side was compared wet etching, its volume obviously diminished, and the thrust of loss plays the effect of compensation, reduces the generation of lateral erosion, prevents to cause electrical loss.
In the various embodiments described above of the present invention, the sequence number of embodiment only is convenient to describe, and does not represent the quality of embodiment.Description to each embodiment all emphasizes particularly on different fields, and does not have the part of detailed description among certain embodiment, can be referring to the associated description of other embodiment.
In embodiment such as apparatus and method of the present invention, obviously, after can decomposing, make up and/or decompose, each parts or each step reconfigure.These decomposition and/or reconfigure and to be considered as equivalents of the present invention.Simultaneously, in the above in the description to the specific embodiment of the invention, can in one or more other execution mode, use in identical or similar mode at the feature that a kind of execution mode is described and/or illustrated, combined with the feature in other execution mode, or the feature in alternative other execution mode.
Should emphasize that term " comprises/comprise " existence that refers to feature, key element, step or assembly when this paper uses, but not get rid of the existence of one or more further feature, key element, step or assembly or additional.
It should be noted that at last: though above the present invention and the advantage thereof of having described in detail is to be understood that and can carries out various changes, alternative and conversion under not exceeding by the situation of the appended the spirit and scope of the present invention that claim limited.And scope of the present invention is not limited only to the specific embodiment of the described process of specification, equipment, means, method and step.The one of ordinary skilled in the art will readily appreciate that from disclosure of the present invention, can use according to the present invention and carry out and process, equipment, means, method or step essentially identical function of corresponding embodiment described herein or acquisition result essentially identical with it, existing and that will be developed in the future.Therefore, appended claim is intended to comprise such process, equipment, means, method or step in their scope.
Claims (10)
1. a salient point bottom protection structure comprises salient point, it is characterized in that the bottom periphery of described salient point is provided with thrust.
2. salient point according to claim 1 bottom protection structure is characterized in that the material of described thrust is identical with the material of described salient point.
3. salient point according to claim 2 bottom protection structure is characterized in that described thrust and described salient point once form in electroplating process, described thrust is the truncated cone-shaped of hollow, is looped around the bottom periphery of described salient point.
4. according to each described salient point bottom protection structure of claim 1-3, it is characterized in that described salient point bottom is provided with ubm layer, described ubm layer bottom is provided with aluminium lamination, and described aluminium lamination bottom is provided with silicon chip.
5. salient point according to claim 4 bottom protection structure; it is characterized in that; also comprise passivation layer; described aluminium lamination extends to beyond the described ubm layer bottom; described silicon chip extends to beyond the described aluminium lamination bottom; described passivation layer covers on the described silicon chip, and extends to successively on aluminium lamination periphery, the described ubm layer bottom aluminium lamination in addition and between described aluminium lamination and the described ubm layer of part.
6. salient point according to claim 5 bottom protection structure is characterized in that described passivation layer is provided with protective layer.
7. salient point according to claim 6 bottom protection structure is characterized in that described passivation layer is silica or silicon nitride; Described protective layer is a polyimide layer.
8. salient point according to claim 6 bottom protection structure; it is characterized in that; ubm layer is exposed in the bottom of described salient point, and the lower surface of described thrust is positioned on the described protective layer, and the side of described thrust is exposed ubm layer with described bottom and covered.
9. salient point according to claim 8 bottom protection structure is characterized in that described salient point comprises the copper post.
10. salient point according to claim 9 bottom protection structure is characterized in that described copper post is provided with nickel dam, and described nickel dam is provided with tin layer or sn-ag alloy layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310137091.9A CN103219305B (en) | 2013-04-18 | 2013-04-18 | Salient point bottom protection structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310137091.9A CN103219305B (en) | 2013-04-18 | 2013-04-18 | Salient point bottom protection structure |
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| Publication Number | Publication Date |
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| CN103219305A true CN103219305A (en) | 2013-07-24 |
| CN103219305B CN103219305B (en) | 2016-04-06 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201310137091.9A Active CN103219305B (en) | 2013-04-18 | 2013-04-18 | Salient point bottom protection structure |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103489842A (en) * | 2013-09-29 | 2014-01-01 | 南通富士通微电子股份有限公司 | Semiconductor packaging structure |
| CN103531487A (en) * | 2013-09-29 | 2014-01-22 | 南通富士通微电子股份有限公司 | Formation method of semiconductor packaging structure |
| CN106298716A (en) * | 2015-06-29 | 2017-01-04 | 台湾积体电路制造股份有限公司 | Package structure and forming method thereof |
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| US5136363A (en) * | 1987-10-21 | 1992-08-04 | Kabushiki Kaisha Toshiba | Semiconductor device with bump electrode |
| CN1841689A (en) * | 2005-03-28 | 2006-10-04 | 富士通株式会社 | Semiconductor device and semiconductor-device manufacturing method |
| KR100639703B1 (en) * | 2005-08-09 | 2006-10-30 | 삼성전자주식회사 | Method for compensating metal base layer undercut and wlcsp manufacturing method using the same |
| CN102315182A (en) * | 2010-07-08 | 2012-01-11 | 台湾积体电路制造股份有限公司 | Semiconductor chip and manufacturing method thereof |
| CN102376638A (en) * | 2010-08-12 | 2012-03-14 | 台湾积体电路制造股份有限公司 | Process for making conductive post with footing profile |
| CN202502990U (en) * | 2011-12-19 | 2012-10-24 | 南通富士通微电子股份有限公司 | Highly reliable chip-level package structure |
-
2013
- 2013-04-18 CN CN201310137091.9A patent/CN103219305B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5136363A (en) * | 1987-10-21 | 1992-08-04 | Kabushiki Kaisha Toshiba | Semiconductor device with bump electrode |
| CN1841689A (en) * | 2005-03-28 | 2006-10-04 | 富士通株式会社 | Semiconductor device and semiconductor-device manufacturing method |
| KR100639703B1 (en) * | 2005-08-09 | 2006-10-30 | 삼성전자주식회사 | Method for compensating metal base layer undercut and wlcsp manufacturing method using the same |
| CN102315182A (en) * | 2010-07-08 | 2012-01-11 | 台湾积体电路制造股份有限公司 | Semiconductor chip and manufacturing method thereof |
| CN102376638A (en) * | 2010-08-12 | 2012-03-14 | 台湾积体电路制造股份有限公司 | Process for making conductive post with footing profile |
| CN202502990U (en) * | 2011-12-19 | 2012-10-24 | 南通富士通微电子股份有限公司 | Highly reliable chip-level package structure |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103489842A (en) * | 2013-09-29 | 2014-01-01 | 南通富士通微电子股份有限公司 | Semiconductor packaging structure |
| CN103531487A (en) * | 2013-09-29 | 2014-01-22 | 南通富士通微电子股份有限公司 | Formation method of semiconductor packaging structure |
| CN103531487B (en) * | 2013-09-29 | 2016-01-27 | 南通富士通微电子股份有限公司 | The formation method of semiconductor package |
| CN106298716A (en) * | 2015-06-29 | 2017-01-04 | 台湾积体电路制造股份有限公司 | Package structure and forming method thereof |
| US10163862B2 (en) | 2015-06-29 | 2018-12-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Package structure and method for forming same |
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| Publication number | Publication date |
|---|---|
| CN103219305B (en) | 2016-04-06 |
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Address after: 226006 Jiangsu Province, Nantong City Chongchuan District Chongchuan Road No. 288 Patentee after: Tongfu Microelectronics Co., Ltd. Address before: 226006 Jiangsu Province, Nantong City Chongchuan District Chongchuan Road No. 288 Patentee before: Fujitsu Microelectronics Co., Ltd., Nantong |