CN103219286A - LED (light emitting diode) display screen and manufacture method thereof - Google Patents
LED (light emitting diode) display screen and manufacture method thereof Download PDFInfo
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- CN103219286A CN103219286A CN2013101031962A CN201310103196A CN103219286A CN 103219286 A CN103219286 A CN 103219286A CN 2013101031962 A CN2013101031962 A CN 2013101031962A CN 201310103196 A CN201310103196 A CN 201310103196A CN 103219286 A CN103219286 A CN 103219286A
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Abstract
The invention discloses an LED (light emitting diode) display screen and a manufacture method thereof. A pixel module of the LED display screen is a single LED chip, and a gap between every two pixels can be effectively controlled, thus the definition of the LED display screen is improved. Meanwhile, the traditional upside-down mounting chip process is optimized to the process that after an electrode group is generated, structures of an electrode layer, an insulation layer and the like are generated, so that the thickness of a chip is effectively controlled, the traditional arrangement of a pair of electrodes is divided into a first electrode group and a second electrode group which are distributed in the corresponding area of a tube core, by adopting the structure, sufficient current expansion can be obtained, current is enabled to be uniformly distributed, a device is enabled to obtain excellent luminescent efficiency and uniform glaring rate, and the requirement that a chip size is further increased can be met.
Description
Technical field
The present invention relates to LED manufacturing technology field, relate in particular to a kind of LED display and preparation method thereof.
Background technology
Light-emitting diode (LED, Light Emitting Diode) is a kind of semiconductor solid luminescence device, and it utilizes semiconductor PN as luminescent material, electricity can be converted to light.After the two ends of semiconductor PN add forward voltage, inject the electronics of PN junction and hole and take place compoundly, the energy of the surplus form with photon is discharged.It is long that LED has the life-span, advantage low in energy consumption, maturation day by day along with technology, the also more and more polynary change in the utilization field of LED, wherein, the manufacturing process in LED display field also more and more ripe, is formed single primary colours display screen to the colorful and full-color display screen of being made up of led chip grain matrix-block from initial by LED bead array, and LED display has been widely used in multimedia advertising and public bulletin shows.
Because LED display is formed by the integrated encapsulation of a plurality of independent encapsulation back led chip usually, because the restriction of this body structure and packaging technology, inevitably there is bigger gap between the led chip, picture element density and definition to display screen cause great influence, hinder LED display shows development from the field to high definition.
And the flip chip technology (fct) process of usually using at present generally includes two steps: finish earlier the manufacturing of parts such as the manufacturing of LED tube core part and edge of substrate lead solder joint respectively, two parts are connected by soldered ball or alternate manner mount then.Such manufacture method has increased processing step and difficulty on the one hand, on the other hand, has limited LED display further developing on thickness and size.
Simultaneously, the increase of chip size has also increased the difficulty of current expansion simultaneously, need the particular design electrode structure for electric current is evenly distributed, the electrode structure of using always can only address this problem to a certain extent at present, can't satisfy the demand that chip size further increases.
Summary of the invention
The invention provides a kind of LED display and preparation method thereof, to solve the demonstration problem that LED display picture element density and definition can't realize higher resolution.
Another object of the present invention is to provide the method for optimizing reverse installation process minimizing LED display thickness.
Another purpose of the present invention is to solve the interior uneven problem of CURRENT DISTRIBUTION of chip of LED display.
For overcoming the above problems, the invention provides a kind of manufacture method of LED display, comprising:
Substrate is provided, on substrate, forms tube core, on described tube core, form first isolation channel and isolate pixel cell;
Form first insulating barrier in die surfaces, and described first insulating barrier of planarization;
Leave the first hole slot group in the first insulating barrier corresponding region;
On first insulating barrier, form the first metal layer, and the described the first metal layer of planarization, the metal in the first hole slot group is formed first electrode group, and the metal level of first surface of insulating layer is formed first electrode layer;
Leave insulation hole slot group in the first electrode layer corresponding region;
On first electrode layer, form second insulating barrier, and described second insulating barrier of planarization;
Leave the second hole slot group in the second insulating barrier corresponding region;
On second insulating barrier, form second metal level, and described second metal level of planarization, metal in the second hole slot group is formed second electrode group, the metal level of second surface of insulating layer is formed the second electrode lay, according to pixels the unit forms second isolation channel in the second electrode lay, is filled with megohmite insulant in second isolation channel;
Form tft layer on the second electrode lay surface;
Mounted substrate on tft layer.
Optionally, in the manufacture method of described LED display, the electrode of described first electrode group is positioned at the center of described pixel cell, and the distribution of electrodes of described second electrode group is on four angles of pixel cell.
Optionally, in the manufacture method of described LED display, described tube core comprises n type semiconductor layer, multiple quantum well layer, p type semiconductor layer and the current-diffusion layer that is formed at successively on the substrate, and described multiple quantum well layer, p type semiconductor layer and current-diffusion layer partly expose described n type semiconductor layer.
Optionally, in the manufacture method of described LED display, described first electrode group is formed on the current-diffusion layer, and described second electrode group is formed on the n type semiconductor layer.
Optionally, in the manufacture method of described LED display, described first electrode group is formed on the n type semiconductor layer, and described second electrode group is formed on the current-diffusion layer.
Optionally, in the manufacture method of described LED display, described substrate is a Sapphire Substrate.
The present invention also provides a kind of LED display, comprise: substrate, be encapsulated in the picture element module on the substrate, described picture element module is single led chip, described led chip comprises: substrate, be formed at the tube core on the described substrate and be arranged on the tube core and with tube core corresponding region electrodes in contact, be formed with first isolation channel on the described tube core and isolate pixel cell, described electrode comprises first electrode group and second electrode group, generate on described first electrode group first electrode layer is arranged, generate on described second electrode group the second electrode lay is arranged, separate by second insulating barrier between described first electrode layer and the second electrode lay, separate jointly by first insulating barrier and second insulating barrier between described first electrode group and second electrode group and be formed with in the second electrode lay according to pixels that the unit forms second isolation channel, the second electrode lay surface is formed with tft layer, and tft layer and substrate mount.
Optionally, in described LED display, the electrode of described first electrode group is positioned at the center of described pixel cell, and the distribution of electrodes of described second electrode group is on four angles of pixel cell.
Optionally, in described LED display, described tube core comprises n type semiconductor layer, multiple quantum well layer, p type semiconductor layer and the current-diffusion layer that is formed at successively on the substrate, and described multiple quantum well layer, p type semiconductor layer and current-diffusion layer partly expose described n type semiconductor layer.
Optionally, in described LED display, described first electrode group contacts with described current-diffusion layer, and described second electrode group contacts with described n type semiconductor layer.
Optionally, in described LED display, described first electrode group contacts with described n type semiconductor layer, and described second electrode group contacts with described current-diffusion layer.
The invention provides a kind of LED display and preparation method thereof, the picture element module of described LED display is single led chip, and the gap between each pixel can be controlled effectively, thereby has improved the definition of LED display; Simultaneously, the present invention is optimized controlled collapsible chip connec-tion, continues to generate structures such as electrode layer and insulating barrier after generating electrode group, makes the thickness of chip be controlled effectively.
Further, and with electrode separation is first electrode group and second electrode group, be distributed on the tube core corresponding region, such structure can obtain sufficient current expansion evenly distributes electric current, make device obtain good illumination efficiency and uniform light emission rate, and can satisfy the demand that chip size further increases.
Description of drawings
Fig. 1 is the distribution of electrodes schematic diagram of the LED display of the embodiment of the invention;
Fig. 2 is the flow chart of manufacture method of the LED display of the embodiment of the invention;
Fig. 3 A～3K is that each step of manufacture method of LED display of the embodiment of the invention is along the structural representation on the AA ' section.
Embodiment
In background technology, mention, because the picture element module of existing LED display is to be formed by a lot of the integrated encapsulation in pixel unit, bigger gap is inevitably arranged between the pixel unit, the picture element density and the definition of display screen caused great influence.Simultaneously, traditional controlled collapsible chip connec-tion manufacture method has increased processing step and difficulty, and has limited LED display further developing on thickness and size.
For this reason, the invention provides a kind of LED display and preparation method thereof, the picture element module that described LED shows is single led chip, described led chip comprises: substrate, be formed at the tube core on the described substrate and be arranged on the tube core and with tube core corresponding region electrodes in contact, described electrode comprises first electrode group and second electrode group, generate on described first electrode group first electrode layer is arranged, generate on described second electrode group the second electrode lay is arranged, separate by second insulating barrier between described first electrode layer and the second electrode lay, separate jointly by first insulating barrier and second insulating barrier between described first electrode group and second electrode group, the second electrode lay surface is formed with tft layer, and tft layer and substrate mount.Because the picture element module of LED display is single led chip, the gap between each pixel can be controlled effectively, thereby has improved the definition of LED display.And such electrode structure can obtain sufficient current expansion evenly distributes electric current, make device obtain good illumination efficiency and uniform light emission rate, and the density of electrode group and electrode number are done respective extension by process requirements just can satisfy the demand that chip size further increases.
Below in conjunction with accompanying drawing the present invention is described in more detail, has wherein represented the preferred embodiments of the present invention, should the described those skilled in the art of understanding can revise the present invention described here, and still realize advantageous effects of the present invention.Therefore, following description is appreciated that extensively knowing for those skilled in the art, and not as limitation of the present invention.
For clear, whole features of practical embodiments are not described.In the following description, be not described in detail known function and structure, because they can make the present invention because unnecessary details and confusion.Will be understood that in the exploitation of any practical embodiments, must make a large amount of implementation details, for example, change into another embodiment by an embodiment according to relevant system or relevant commercial restriction to realize developer's specific objective.In addition, will be understood that this development may be complicated and time-consuming, but only be routine work to those skilled in the art.
In the following passage, with way of example the present invention is described more specifically with reference to accompanying drawing.According to the following describes and claims, advantages and features of the invention will be clearer.It should be noted that accompanying drawing all adopts very the form of simplifying and all uses non-ratio accurately, only in order to convenient, the purpose of the aid illustration embodiment of the invention lucidly.
Please refer to Fig. 1 and Fig. 3 K, Fig. 1 is the distribution of electrodes signal of the LED display of the embodiment of the invention; Fig. 3 I is the generalized section of the LED display of the embodiment of the invention along AA '.Described LED display comprises: substrate 413 and the picture element module that is encapsulated on the substrate, described picture element module is single led chip.Described led chip comprises: substrate 401, be formed at tube core 415 on the described substrate, be arranged at the electrode on tube core 415 corresponding regions.Be formed with first isolation channel 414 on the described tube core 415 and isolate pixel cell, described electrode comprises first electrode group 402 and second electrode group 403.Generating on described first electrode group 402 has first electrode layer 410, and generating on described second electrode group 403 has the second electrode lay 412.Separate jointly by first insulating barrier 421 and second insulating barrier 422 between described first electrode layer 410, the second electrode lay 412, first electrode group 402 and second electrode group 403, be formed with in the second electrode lay 412 according to pixels that the unit forms second isolation channel 417, the second electrode lay 412 surfaces are formed with tft layer 416.Substrate 413 is mounted on the tft layer 416.
Wherein, tft layer 416 shows corresponding informance in order to come the driving LED display screen according to external signal.Because the picture element module of LED display is single led chip, like this, the gap between each pixel can be controlled effectively, thereby has improved the definition of LED display.And on tube core 415, be formed with first isolation channel 414, isolate pixel cell.Influence each other in the time of can avoiding working between the pixel like this, further improved the definition of LED display.
Present embodiment preferably divides row to be evenly distributed on the center of pixel cell at the electrode of described first electrode group 402, and the distribution of electrodes of second electrode group 403 is on four angles of pixel cell.Like this, charge carrier can evenly be diffused in the pixel cell by first electrode group 402 and second electrode group 403 when device is worked, improve the luminous efficiency of device, and, when the size of chip increases, can do respective extension by process requirements to the density and the electrode number of electrode group, that is, and applicable to the LED display of arbitrary dimension.The researcher in this field can do accommodation to the number and the density of electrode group according to device requirement and technology purpose.
Continue with reference to figure 3K, tube core 415 generally comprises n type semiconductor layer 404, multiple quantum well layer 405, p type semiconductor layer 406 and the current-diffusion layer 407 that is formed at successively on the substrate 401.Described n type semiconductor layer 404, multiple quantum well layer 405 and p type semiconductor layer 406 form in order to luminous PN junction, and described current-diffusion layer 407 plays the effect of extend current.Described multiple quantum well layer 405, p type semiconductor layer 406 and current-diffusion layer 407 parts expose described n type semiconductor layer 404, in order to form electrode on n type semiconductor layer.402 described current-diffusion layer 407 contacts of first electrode group described in the present embodiment, described second electrode group 403 contacts with described n type semiconductor layer 404.Described first electrode group 402 can certainly be contacted with described n type semiconductor layer 404, described second electrode group contacts with described current-diffusion layer 407.
Please refer to Fig. 2, the flow chart of the LED display manufacture method that it provides for the embodiment of the invention, described method comprises the steps:
Step S31 provides substrate, forms tube core on substrate, forms first isolation channel and isolate pixel cell on described tube core;
Step S32 forms first insulating barrier in die surfaces, and described first insulating barrier of planarization;
Step S33 leaves the first hole slot group in the first insulating barrier corresponding region;
Step S34 forms the first metal layer on first insulating barrier, and the described the first metal layer of planarization, and the metal in the first hole slot group is formed first electrode group, and the metal level of first surface of insulating layer is formed first electrode layer;
Step S35 leaves insulation hole slot group in the first electrode layer corresponding region;
Step S36 forms second insulating barrier on first electrode layer, and described second insulating barrier of planarization;
Step S37 leaves the second hole slot group in the second insulating barrier corresponding region;
Step S38, on second insulating barrier, form second metal level, and described second metal level of planarization, metal in the second hole slot group is formed second electrode group, the metal level of second surface of insulating layer is formed the second electrode lay, according to pixels the unit forms second isolation channel in the second electrode lay, fills megohmite insulant in second isolation channel;
Step S39 forms tft layer on the second electrode lay surface;
Step S40, mounted substrate on tft layer.
With reference to Fig. 3 A, execution in step S31 provides substrate 401, forms tube core 415 on substrate, and in this example, described substrate 401 is sapphire (Al
2O
3) substrate.Certainly, according to technology, also can select for use other to be applicable to the substrate that LED display is made, for example be spinelle (MgAl
2O
4), SiC, ZnS, ZnO or GaAs substrate.Described tube core 415 is included in n type semiconductor layer 404, multiple quantum well layer 405, p type semiconductor layer 406, the current-diffusion layer 407 that forms successively on the substrate 401, and described multiple quantum well layer 405, p type semiconductor layer 406, current-diffusion layer 407 parts expose described n type semiconductor layer 404.Wherein, utilize mask plate at corresponding region selectivity opening, expose described n type semiconductor layer 404 with part according to the distribution of the design of first electrode group 402 and second electrode group 403.Form that the method for described tube core 415 is well known to those skilled in the art, do not repeat them here.Preferably, after forming tube core, on tube core, form first isolation channel 414, isolate pixel cell.Influence each other in the time of can avoiding working between the pixel like this, further improved the definition of LED display.
With reference to Fig. 3 B, execution in step S32 forms first insulating barrier 421 in die surfaces, and described first insulating barrier 421 of planarization.First insulating barrier, 421 materials are used the insulation material, are applicable to the insulating material that LED makes such as silica, silicon nitride or other.
With reference to Fig. 3 C, execution in step S33 leaves the first hole slot group 402 ' in first insulating barrier, 421 corresponding regions.Concrete, the position of the described first hole slot group, 402 ' opening is to decide corresponding to the position of first electrode group, 402 designs, position owing to first electrode group 402 is arranged on the current-diffusion layer 407 in the present embodiment, therefore the first hole slot group, 402 ' opening is applied in first insulating barrier 421 on the current-diffusion layer 407, that is, the described first hole slot group 402 ' exposes the surface of described current-diffusion layer 407.。If the position of first electrode group 402 is arranged on the n type semiconductor layer 404, then the first hole slot group, 402 ' opening is applied in first insulating barrier 421 on the n type semiconductor layer 404, that is, the described first hole slot group 402 ' exposes the surface of described n type semiconductor layer 404.
With reference to Fig. 3 D, execution in step S34 forms the first metal layer on first insulating barrier 421, and the described the first metal layer of planarization, and the metal in the first hole slot group is formed the metal level on first electrode group, 402, the first insulating barriers, 421 surfaces and formed first electrode layer 408.The method that forms described the first metal layer can be to electroplate, and also can be this area method commonly used, such as the physics vapor phase deposition etc.
With reference to Fig. 3 E, execution in step S35 leaves insulation hole slot group in first electrode layer, 408 corresponding regions.Same, insulation hole slot group's aperture position is adjusted according to the position of second electrode group, 403 designs.In the present embodiment, part exposes described n type semiconductor layer 404 among the corresponding step S31 in described insulation hole slot group's position.
With reference to Fig. 3 F, execution in step S36, deposition second insulating barrier 422 on first electrode layer 408, and described second insulating barrier 422 of planarization.Second insulating barrier, 422 materials are used the insulation material, are applicable to the insulating material that LED makes such as silica, silicon nitride or other.
With reference to Fig. 3 G, execution in step S37 leaves the second hole slot group 403 ' in second insulating barrier, 422 corresponding regions.Concrete, the position of the described second hole slot group, 403 ' opening is to decide corresponding to the position of second electrode group, 403 designs, position owing to second electrode group 402 is arranged on the n type semiconductor layer 404 in the present embodiment, therefore the second hole slot group, 403 ' opening is applied in first insulating barrier 421 and second insulating barrier 422 on the n type semiconductor layer 404, that is the surface of the described n type semiconductor layer 404 of the described second hole slot group, 403 ' expose portion.
With reference to Fig. 3 H and Fig. 3 I, execution in step S38, deposition second metal level on second insulating barrier 422, and described second metal level of planarization, metal in the second hole slot group 403 ' is formed second electrode group 403, the metal level on second insulating barrier, 422 surfaces forms the second electrode lay 412, then in the second electrode lay 412 according to pixels the unit form second isolation channel 417, in second isolation channel 417, be filled with megohmite insulant, be applicable to the insulating material that LED makes such as silica, silicon nitride or other.Fill insulant is a technological means well-known to those skilled in the art in raceway groove, does not repeat them here.
Preferred, with reference to Fig. 1, the electrode of first electrode group 402 is positioned at the center of described pixel cell, and second electrode group 403 is distributed on four angles of pixel cell.
With reference to Fig. 3 I, execution in step S39 forms tft layer 416 on the second electrode lay 412 surfaces.Utilize thin-film transistor to drive each pixel cell, each transistor in the tft layer 416 is electrically connected with second electrode of each pixel cell respectively by the second electrode lay 412, the concrete zone (n type semiconductor layer and p type semiconductor layer) that first electrode of pixel cell contacts with second electrode group 403 according to first electrode group 402 is connected on the corresponding current potential, tft layer 416 changes the current potential of second electrode according to external signal, whether the conducting of controlling each pixel cell reaches the purpose that the driving LED display screen shows corresponding informance.The method that forms thin-film transistor is a general knowledge as well known to those skilled in the art, and the present invention there is no improvement to the transistorized method of film former, does not repeat them here the manufacture method of tft layer.
With reference to Fig. 3 J, execution in step S40, mounted substrate 413 on tft layer 416.
The LED display that forms by such method manufacturing, the integrated again picture element module that is encapsulated into after the led chip sliver need not being become single led luminescence unit encapsulate separately, gap between each pixel can be controlled effectively, thereby has improved the definition of LED display.And compare with traditional controlled collapsible chip connec-tion, optimized processing step, make the controllable degree of LED display thickness improve.
In sum, the structure of LED display provided by the present invention and manufacture method thereof, the picture element module of described LED display is single led chip, the gap between each pixel can be controlled effectively, thereby has improved the definition of LED display.Simultaneously, the present invention is optimized for traditional controlled collapsible chip connec-tion and continues to generate structures such as electrode layer and insulating barrier after generating electrode group, make the thickness of chip be controlled effectively, and traditional pair of electrodes that is provided with is divided into first electrode group and second electrode group that is distributed in the tube core corresponding region, such structure can obtain sufficient current expansion evenly distributes electric current, make device obtain good illumination efficiency and uniform light emission rate, and can satisfy the demand that chip size further increases.
Obviously, those skilled in the art can carry out various changes and modification to the present invention and not break away from the spirit and scope of the present invention.Like this, if of the present invention these are revised and modification belongs within the scope of claim of the present invention and equivalent technologies thereof, then the present invention also is intended to comprise these changes and modification interior.
Claims (11)
1. the manufacture method of a LED display comprises:
Substrate is provided, on substrate, forms tube core, on described tube core, form first isolation channel and isolate pixel cell;
Form first insulating barrier in die surfaces, and described first insulating barrier of planarization;
Leave the first hole slot group in the first insulating barrier corresponding region;
On first insulating barrier, form the first metal layer, and the described the first metal layer of planarization, the metal in the first hole slot group is formed first electrode group, and the metal level of first surface of insulating layer is formed first electrode layer;
Leave insulation hole slot group in the first electrode layer corresponding region;
On first electrode layer, form second insulating barrier, and described second insulating barrier of planarization;
Leave the second hole slot group in the second insulating barrier corresponding region;
On second insulating barrier, form second metal level, and described second metal level of planarization, metal in the second hole slot group is formed second electrode group, the metal level of second surface of insulating layer is formed the second electrode lay, according to pixels the unit forms second isolation channel in the second electrode lay, is filled with megohmite insulant in second isolation channel;
Form tft layer on the second electrode lay surface;
Mounted substrate on tft layer.
2. the manufacture method of LED display as claimed in claim 1, it is characterized in that: the electrode of described first electrode group is positioned at the center of described pixel cell, and the distribution of electrodes of described second electrode group is on four angles of pixel cell.
3. the manufacture method of LED display as claimed in claim 1, it is characterized in that: described tube core comprises n type semiconductor layer, multiple quantum well layer, p type semiconductor layer and the current-diffusion layer that is formed at successively on the substrate, and described multiple quantum well layer, p type semiconductor layer and current-diffusion layer partly expose described n type semiconductor layer.
4. the manufacture method of LED display as claimed in claim 3, it is characterized in that: described first electrode group is formed on the current-diffusion layer, and described second electrode group is formed on the n type semiconductor layer.
5. the manufacture method of LED display as claimed in claim 3, it is characterized in that: described first electrode group is formed on the n type semiconductor layer, and described second electrode group is formed on the current-diffusion layer.
6. as the manufacture method of each described LED display in the claim 1 to 5, it is characterized in that: described substrate is a Sapphire Substrate.
7. the LED display that produces of the method for claim 1, comprise: substrate, be encapsulated in the picture element module on the substrate, it is characterized in that: described picture element module is single led chip, described led chip comprises: substrate, be formed at the tube core on the described substrate and be arranged on the tube core and with tube core corresponding region electrodes in contact, be formed with first isolation channel on the described tube core and isolate pixel cell, described electrode comprises first electrode group and second electrode group, generate on described first electrode group first electrode layer is arranged, generate on described second electrode group the second electrode lay is arranged, separate by second insulating barrier between described first electrode layer and the second electrode lay, separate jointly by first insulating barrier and second insulating barrier between described first electrode group and second electrode group, being formed with according to pixels in the second electrode lay, the unit forms second isolation channel, the second electrode lay surface is formed with tft layer, and tft layer and substrate mount.
8. LED display as claimed in claim 7 is characterized in that: the electrode of described first electrode group is positioned at the center of described pixel cell, and the distribution of electrodes of described second electrode group is on four angles of pixel cell.
9. LED display as claimed in claim 8, it is characterized in that: described tube core comprises n type semiconductor layer, multiple quantum well layer, p type semiconductor layer and the current-diffusion layer that is formed at successively on the substrate, and described multiple quantum well layer, p type semiconductor layer and current-diffusion layer partly expose described n type semiconductor layer.
10. LED display as claimed in claim 9 is characterized in that: described first electrode group contacts with described current-diffusion layer, and described second electrode group contacts with described n type semiconductor layer.
11. LED display as claimed in claim 9 is characterized in that: described first electrode group contacts with described n type semiconductor layer, and described second electrode group contacts with described current-diffusion layer.
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| CN201310103196.2A CN103219286B (en) | 2012-11-16 | 2013-03-27 | LED (light emitting diode) display screen and manufacture method thereof |
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| CN201210465903.8 | 2012-11-16 | ||
| CN201310103196.2A CN103219286B (en) | 2012-11-16 | 2013-03-27 | LED (light emitting diode) display screen and manufacture method thereof |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104934456A (en) * | 2014-03-20 | 2015-09-23 | 联想(北京)有限公司 | Light-emitting device |
| CN104979341A (en) * | 2014-04-02 | 2015-10-14 | 联想(北京)有限公司 | Display device and light emitting device |
| CN105161605A (en) * | 2015-07-21 | 2015-12-16 | 山东浪潮华光光电子股份有限公司 | GaN-base LED chip preparation method capable of achieving high-efficient packaging |
| CN109360846A (en) * | 2018-10-29 | 2019-02-19 | 清华大学 | The manufacturing method of flexible display screen |
| CN113433733A (en) * | 2020-03-23 | 2021-09-24 | 株式会社日本显示器 | Light emitting device |
| CN115832126A (en) * | 2022-12-22 | 2023-03-21 | 惠科股份有限公司 | Display panel, preparation method thereof and display device |
| CN113433733B (en) * | 2020-03-23 | 2024-05-14 | 株式会社日本显示器 | Light emitting device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0513818A (en) * | 1991-07-05 | 1993-01-22 | Sharp Corp | Surface package-type light-emitting diode |
| WO2004030112A2 (en) * | 2002-09-27 | 2004-04-08 | Gelcore Llc | Optimized contact design for flip-chip led |
-
2013
- 2013-03-27 CN CN201310103196.2A patent/CN103219286B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0513818A (en) * | 1991-07-05 | 1993-01-22 | Sharp Corp | Surface package-type light-emitting diode |
| WO2004030112A2 (en) * | 2002-09-27 | 2004-04-08 | Gelcore Llc | Optimized contact design for flip-chip led |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104934456A (en) * | 2014-03-20 | 2015-09-23 | 联想(北京)有限公司 | Light-emitting device |
| CN104934456B (en) * | 2014-03-20 | 2018-08-31 | 联想(北京)有限公司 | Light-emitting device |
| CN104979341A (en) * | 2014-04-02 | 2015-10-14 | 联想(北京)有限公司 | Display device and light emitting device |
| CN105161605A (en) * | 2015-07-21 | 2015-12-16 | 山东浪潮华光光电子股份有限公司 | GaN-base LED chip preparation method capable of achieving high-efficient packaging |
| CN105161605B (en) * | 2015-07-21 | 2017-11-24 | 山东浪潮华光光电子股份有限公司 | A kind of GaN base LED core piece preparation method of achievable efficient encapsulation |
| CN109360846A (en) * | 2018-10-29 | 2019-02-19 | 清华大学 | The manufacturing method of flexible display screen |
| CN113433733A (en) * | 2020-03-23 | 2021-09-24 | 株式会社日本显示器 | Light emitting device |
| CN113433733B (en) * | 2020-03-23 | 2024-05-14 | 株式会社日本显示器 | Light emitting device |
| CN115832126A (en) * | 2022-12-22 | 2023-03-21 | 惠科股份有限公司 | Display panel, preparation method thereof and display device |
| CN115832126B (en) * | 2022-12-22 | 2024-04-19 | 惠科股份有限公司 | Display panel, preparation method thereof and display device |
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| CN103219286B (en) | 2015-03-18 |
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