CN104934456A - Light-emitting device - Google Patents
Light-emitting device Download PDFInfo
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- CN104934456A CN104934456A CN201410105644.7A CN201410105644A CN104934456A CN 104934456 A CN104934456 A CN 104934456A CN 201410105644 A CN201410105644 A CN 201410105644A CN 104934456 A CN104934456 A CN 104934456A
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Abstract
An embodiment of the invention provides a light-emitting device. The light-emitting device includes: a substrate; an insulating layer having a grid structure and formed on the substrate, each of a plurality of light-emitting diodes being formed on a hollow part of the grid structure and including an N type GaN layer formed on the substrate in the hollow part, a luminous layer formed on the N type GaN layer, a P type GaN layer formed on the luminous layer, an N electrode formed on the N type GaN layer, and a P electrode formed on the P type GaN layer; and a plurality of thin film transistors each of which is formed on a side wall of the grid in which the LED corresponding to the TFT is formed, a drain electrode of the TFT is connected with the P electrode to control the light-emitting diode, a grid electrode of the TFT is configured to receive a scanning signal, and a source electrode of the TFT is configured to receive a data signal.
Description
Technical field
The present invention relates to a kind of light-emitting device, more particularly, the present invention relates to the light-emitting device that one has multiple light-emitting diode (LED).
Background technology
Along with the development of technology, display device is widely used.But because liquid crystal and absorbing sheet can stop, absorb backlight more than 90%, therefore traditional display device efficiency utilizing liquid crystal display (LCD) to carry out showing is low, and power consumption for displays waste is large.
Although active matrix organic light-emitting diode (AMOLED) technology proposed at present can be raised the efficiency effectively relative to lcd technology, but the luminous efficiency of ruddiness Organic Light Emitting Diode (OLED) is lower, usually about 10lm/W can only be reached, and the efficiency of blue light organic emissive diode is lower.In addition, the emission wavelength of blue light organic emissive diode is impure, and chromaticity coordinates departs from pure blue, and cause Integral luminous colour gamut not wide, display effect is not good.In addition, Organic Light Emitting Diode adopts organic material, its thermal stability, and chemistry is poor with humidity stability, and restricted lifetime.
Summary of the invention
The object of the embodiment of the present invention is to provide a kind of light-emitting device, to solve the problem.
Embodiments provide a kind of light-emitting device.This light-emitting device comprises: substrate; Insulating barrier, there is network, formed on substrate, multiple light-emitting diode (LED), wherein each light-emitting diode is formed in a hollow space of network, and comprise: N-type GaN layer, be formed on the substrate in hollow space, luminescent layer, be formed in N-type GaN layer, P type GaN layer, is formed on luminescent layer; N electrode, is formed in N-type GaN layer; P electrode, is formed in P type GaN layer; And multiple thin-film transistor (TFT), with multiple light-emitting diode one_to_one corresponding, wherein each thin-film transistor is formed on the sidewall of the grid which has been formed the light-emitting diode corresponding with this TFT, and the drain electrode of this thin-film transistor is connected to control light-emitting diode with P electrode, the gate configuration of thin-film transistor receives sweep signal, and the source electrode configuration of thin-film transistor receives data-signal.
According to the light-emitting diode that the light-emitting device of the embodiment of the present invention adopts inorganic material to make, compared with Organic Light Emitting Diode, not only increase luminous efficiency, and enhance thermal stability, chemistry is poor with humidity stability, and is delayed the useful life of light-emitting device.In addition, according in the light-emitting device of the embodiment of the present invention, the insulating barrier with network is not only separated by each light-emitting diode, and insulation network facilitates and arranges thin-film transistor correspondingly with light-emitting diode.By using separating the insulation grid of light-emitting diode as the substrate of the thin-film transistor for the preparation of control light-emitting diode, efficiently utilizing space, and reducing the size of light-emitting device.Meanwhile, formally the independent control to each light-emitting diode is achieved by these thin-film transistors.
Accompanying drawing explanation
In order to be illustrated more clearly in the technical scheme of the embodiment of the present invention, be briefly described to the accompanying drawing used required in the description of embodiment below.Accompanying drawing in the following describes is only exemplary embodiment of the present invention.
Fig. 1 illustrates to schematically illustrate figure according to embodiment of the present invention substrate and insulating barrier.
Fig. 2 is the vertical view of an insulating barrier part for the light-emitting device schematically shown according to the embodiment of the present invention.
Fig. 3 be illustrate according to the embodiment of the present invention, light-emitting diode is set in the hollow space of insulating barrier grid schematically illustrate figure.
Fig. 4 and Fig. 5 illustrates to schematically illustrate figure according to what arrange the thin-film transistor corresponding with light-emitting diode.
Fig. 6 be the insulating protective layer of stating light-emitting device is shown schematically illustrate figure.
Embodiment
Hereinafter, the preferred embodiments of the present invention are described in detail with reference to accompanying drawing.Note, in the present description and drawings, there is substantially the same step and represent with the identical Reference numeral of element, and will be omitted the repetition of explanation of these steps and element.
Below, the light-emitting device of embodiments of the invention is described referring to figs. 1 through Fig. 5.The light-emitting device 100 of the present embodiment comprises substrate 110, insulating barrier 120, light-emitting diode and thin-film transistor.
Fig. 1 illustrates to schematically illustrate figure according to embodiment of the present invention substrate 110 and insulating barrier 120.In an embodiment according to the present invention, the material that substrate 110 can be grown by applicable GaN material such as such as sapphire, carborundum, (111) silicon etc. is made.As shown in Figure 1, insulating barrier 120 is arranged on a substrate 110.Such as, the methods such as plasma reinforced chemical vapour deposition method (PECVD), photoetching, ICP etching can be utilized on backing material to prepare insulating barrier.In addition, the material that insulating layer material can adopt silicon dioxide, silicon nitride etc. to be not suitable for III-nitride growth is made.
Fig. 2 is the vertical view of an insulating barrier part for the light-emitting device schematically shown according to the embodiment of the present invention.According to an example of the present invention, the size of the grid of insulating barrier can be determined by the pixel resolution required for light-emitting device.Such as, the pixel resolution required for light-emitting device, in the network of insulating barrier 120, each grid can interval 10-500um.Although it should be noted that in fig. 2 for grid each in the network of insulating barrier 120 for rectangle is described, to be of the present inventionly not limited thereto.Such as, also according to specific design needs, the mesh shapes such as triangle, pentagon, hexagon can be adopted.
In addition, preferably, the height of insulating barrier 120 is more than or equal to the height of the light emitting diode construction grown in the hollow space of grid.That is, insulating barrier 120 the height of grid sidewall be more than or equal to the height of the light emitting diode construction wherein formed.The structure of the light-emitting diode according to the embodiment of the present invention is described below with reference to Fig. 3.
Fig. 3 be illustrate according to the embodiment of the present invention, light-emitting diode is set in the hollow space of insulating barrier grid schematically illustrate figure.In an embodiment according to the present invention, each light-emitting diode is formed in a hollow space of network.Each light-emitting diode comprises N-type GaN layer 131, luminescent layer 132, P type GaN layer 133, N electrode (not shown) and P electrode (not shown).As shown in Figure 3, N-type GaN layer 131 is formed on the substrate 110 in the hollow space of insulation grid 120.The method such as photoetching, ICP etching can be utilized to prepare the N-type raceway groove 134 of light-emitting diode.As shown in Figure 3, etching depth is as the criterion to reach but not exhaust N-type GaN layer 131.Luminescent layer 132 is formed on N-type GaN131 layer.Particularly, luminescent layer 132 covers on the region except N-type raceway groove 134 of N-type GaN layer 131.P type GaN layer 133 is formed on luminescent layer 132.The methods such as MOCVD, MBE, HVPE can be utilized in insulation grid to grow N-type GaN layer 131, luminescent layer 132 and P type GaN layer 133.In addition, preferably, each light-emitting diode also can comprise the GaN layer (as shown in the black region in Fig. 3) of the undoped between N-type GaN layer and substrate, to provide the luminous efficiency of light-emitting diode.
In addition, N electrode is formed in N-type GaN layer, and P electrode is formed in P type GaN layer.Such as, N electrode is formed in N-type raceway groove 134.Particularly, the method such as evaporation, sputtering can be utilized in p-type GaN layer 133 and N-type GaN raceway groove 134, to prepare metal electrode respectively.
Thin-film transistor can be formed on the sidewall of insulation grid.That is, insulate grid while being separated by each light-emitting diode, also as the substrate of the thin-film transistor for the preparation of control light-emitting diode.Thus efficiently utilize space, and reduce the size of light-emitting device.
The gate configuration of thin-film transistor receives sweep signal, and the configuration of the source electrode of thin-film transistor receives data-signal.In addition, the drain electrode of thin-film transistor can be connected with the P electrode of Light-Emitting Diode, to control light-emitting diode according to received sweep signal and data-signal.
Fig. 4 and Fig. 5 illustrates to schematically illustrate figure according to what arrange the thin-film transistor (TFT) corresponding with light-emitting diode.As shown in Figure 4 and Figure 5, according to an example of the present invention, the conveniently connection of the drain electrode of thin-film transistor and the P electrode of Light-Emitting Diode, the thin-film transistor that preparation is corresponding with this Light-Emitting Diode on the insulating barrier of the P electrode 136 near Light-Emitting Diode.In other words, the distance between the P electrode 136 of the insulation grid sidewall that is formed thereon of thin-film transistor and the light-emitting diode corresponding to this thin-film transistor is less than the distance between the N electrode 135 of this light-emitting diode.
As shown in Figure 5, according to an example of the present invention, the N electrode 135 of light-emitting diode can be thickeied the upper surface of the sidewall to insulating barrier, be connected so that connect up with other in display unit 100.In an embodiment according to the present invention, a low level can all be accessed to the N electrode of light-emitting diode whole in light-emitting device 100.
In addition, preferably, the light-emitting device 100 shown in Fig. 1 also can protective layer.Particularly, light-emitting device 100 also can comprise the insulating protective layer of the superiors being formed as this light-emitting device, to protect light-emitting diode and thin-film transistor.Fig. 6 be the insulating protective layer 160 of stating light-emitting device is shown schematically illustrate figure.As shown in Figure 6, insulating protective layer 160 is arranged on the insulating barrier 120 of light-emitting device 100, light-emitting diode and thin-film transistor.
In addition, according to another example of the present invention, the luminescent layer of light-emitting diode can be used for sending blue light.Such as, form luminescent layer by i-InGaN material, the light sent to make light-emitting diode is blueness.Can three light-emitting diodes and thin-film transistor corresponding with these three light-emitting diodes respectively be a pixel cell, and the light-emitting diode of two in each pixel cell be added respectively to the fluorescent material of other colors.Such as, red fluorescence powder and green emitting phosphor can be added respectively to the light-emitting diode of two in each pixel cell, thus each pixel cell can send blue light, red light and green light, colour display can be carried out to make light-emitting device 100.
Below composition graphs 1 to Fig. 6 is described the light-emitting device according to the embodiment of the present invention.As mentioned above, according to the light-emitting diode that the light-emitting device of the embodiment of the present invention adopts inorganic material to make, compared with Organic Light Emitting Diode, not only increase luminous efficiency, and enhancing thermal stability, chemistry is poor with humidity stability, and is delayed the useful life of light-emitting device.In addition, according in the light-emitting device of the embodiment of the present invention, the insulating barrier with network is not only separated by each light-emitting diode, and insulation network facilitates and arranges thin-film transistor correspondingly with light-emitting diode.By using separating the insulation grid of light-emitting diode as the substrate of the thin-film transistor for the preparation of control light-emitting diode, efficiently utilizing space, and reducing the size of light-emitting device.Meanwhile, formally the independent control to each light-emitting diode is achieved by these thin-film transistors.
It should be appreciated by those skilled in the art that and can be dependent on design requirement and other factors carries out various amendment, combination, incorporating aspects and replacement to the present invention, as long as they are in the scope of appended claims and equivalent thereof.
Claims (8)
1. a light-emitting device comprises:
Substrate;
Insulating barrier, has network, is formed on described substrate,
Multiple light-emitting diode (LED), wherein each described light-emitting diode is formed in a hollow space of described network, and comprises:
N-type GaN layer, is formed on the described substrate in described hollow space,
Luminescent layer, is formed in described N-type GaN layer,
P type GaN layer, is formed on the light-emitting layer;
N electrode, is formed in described N-type GaN layer;
P electrode, is formed in described P type GaN layer; And
Multiple thin-film transistor (TFT), with described multiple LED one_to_one corresponding, wherein each described TFT is formed on the sidewall of the grid which has been formed the LED corresponding with this TFT, and the drain electrode of this TFT is connected to control described light-emitting diode with described P electrode, the gate configuration of described TFT receives sweep signal, and the source electrode configuration of described TFT receives data-signal.
2. light-emitting device as claimed in claim 1, wherein
Pixel resolution needed for described light-emitting device determines the size of the grid of described insulating barrier.
3. light-emitting device as claimed in claim 1, wherein
The Sidewall Height of the grid of described insulating barrier is more than or equal to the height of the LED wherein formed.
4. light-emitting device as claimed in claim 1, wherein
The material of described insulating barrier is the insulating material being not suitable for III-nitride growth.
5. light-emitting device as claimed in claim 1, wherein
Distance between the P electrode of the LED that the sidewall that each described TFT is formed is corresponding with this TFT Suo Shi is less than the distance between the N electrode of LED corresponding to this TFT.
6. light-emitting device as claimed in claim 1, wherein
Described N-type GaN layer forms N-type raceway groove,
Described N electrode is formed in described N-type raceway groove, and is thickened the upper surface of the sidewall to described insulating barrier.
7. light-emitting device as claimed in claim 1, wherein
Described luminescent layer is used for sending blue light,
Be a pixel cell with three LED and TFT corresponding with these three LED respectively, wherein
Red, green fluorescence powder is added respectively to two LED in each described pixel cell, blue light, red light and green light can be sent to make each described pixel cell.
8. light-emitting device as claimed in claim 1, also comprises:
Insulating protective layer, is formed as the superiors of described light-emitting device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410105644.7A CN104934456B (en) | 2014-03-20 | 2014-03-20 | Light-emitting device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410105644.7A CN104934456B (en) | 2014-03-20 | 2014-03-20 | Light-emitting device |
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| CN104934456A true CN104934456A (en) | 2015-09-23 |
| CN104934456B CN104934456B (en) | 2018-08-31 |
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| CN201410105644.7A Active CN104934456B (en) | 2014-03-20 | 2014-03-20 | Light-emitting device |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108649048A (en) * | 2018-07-10 | 2018-10-12 | 南方科技大学 | Monolithic integrated semiconductor device and preparation method thereof |
| WO2021017499A1 (en) * | 2019-07-26 | 2021-02-04 | 成都辰显光电有限公司 | Display panel and manufacturing method therefor |
| CN113433733A (en) * | 2020-03-23 | 2021-09-24 | 株式会社日本显示器 | Light emitting device |
| WO2022004308A1 (en) * | 2020-06-29 | 2022-01-06 | 日亜化学工業株式会社 | Production method for image display device and image display device |
| CN114711728A (en) * | 2022-06-10 | 2022-07-08 | 天津大学 | Flexible near-infrared imaging device with variable monitoring area and depth and preparation method thereof |
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| WO2004030112A2 (en) * | 2002-09-27 | 2004-04-08 | Gelcore Llc | Optimized contact design for flip-chip led |
| CN1521856A (en) * | 2003-02-12 | 2004-08-18 | 胜园科技股份有限公司 | Manufacturing process for increasing readable contrast of organic light emitting diode |
| CN103219286A (en) * | 2012-11-16 | 2013-07-24 | 映瑞光电科技(上海)有限公司 | LED (light emitting diode) display screen and manufacture method thereof |
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2014
- 2014-03-20 CN CN201410105644.7A patent/CN104934456B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004030112A2 (en) * | 2002-09-27 | 2004-04-08 | Gelcore Llc | Optimized contact design for flip-chip led |
| CN1521856A (en) * | 2003-02-12 | 2004-08-18 | 胜园科技股份有限公司 | Manufacturing process for increasing readable contrast of organic light emitting diode |
| CN103219286A (en) * | 2012-11-16 | 2013-07-24 | 映瑞光电科技(上海)有限公司 | LED (light emitting diode) display screen and manufacture method thereof |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108649048A (en) * | 2018-07-10 | 2018-10-12 | 南方科技大学 | Monolithic integrated semiconductor device and preparation method thereof |
| WO2021017499A1 (en) * | 2019-07-26 | 2021-02-04 | 成都辰显光电有限公司 | Display panel and manufacturing method therefor |
| CN113433733A (en) * | 2020-03-23 | 2021-09-24 | 株式会社日本显示器 | Light emitting device |
| CN113433733B (en) * | 2020-03-23 | 2024-05-14 | 株式会社日本显示器 | Light emitting device |
| WO2022004308A1 (en) * | 2020-06-29 | 2022-01-06 | 日亜化学工業株式会社 | Production method for image display device and image display device |
| CN114711728A (en) * | 2022-06-10 | 2022-07-08 | 天津大学 | Flexible near-infrared imaging device with variable monitoring area and depth and preparation method thereof |
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| Publication number | Publication date |
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| CN104934456B (en) | 2018-08-31 |
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