CN103214901A - 一种制备铜铟镓硒墨水的方法 - Google Patents
一种制备铜铟镓硒墨水的方法 Download PDFInfo
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- CN103214901A CN103214901A CN2013101190884A CN201310119088A CN103214901A CN 103214901 A CN103214901 A CN 103214901A CN 2013101190884 A CN2013101190884 A CN 2013101190884A CN 201310119088 A CN201310119088 A CN 201310119088A CN 103214901 A CN103214901 A CN 103214901A
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- copper
- indium
- ink
- powder
- selenium
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Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 18
- 238000000034 method Methods 0.000 claims abstract description 44
- 239000002904 solvent Substances 0.000 claims abstract description 43
- 239000000843 powder Substances 0.000 claims abstract description 37
- 239000002245 particle Substances 0.000 claims abstract description 36
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 35
- 238000000498 ball milling Methods 0.000 claims abstract description 16
- 238000005096 rolling process Methods 0.000 claims abstract description 7
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 42
- 229910052711 selenium Inorganic materials 0.000 claims description 32
- 239000011669 selenium Substances 0.000 claims description 32
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 24
- 239000001856 Ethyl cellulose Substances 0.000 claims description 22
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 claims description 22
- 229920001249 ethyl cellulose Polymers 0.000 claims description 22
- 235000019325 ethyl cellulose Nutrition 0.000 claims description 22
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 20
- 238000002156 mixing Methods 0.000 claims description 18
- 239000003960 organic solvent Substances 0.000 claims description 16
- QGLWBTPVKHMVHM-KTKRTIGZSA-N (z)-octadec-9-en-1-amine Chemical compound CCCCCCCC\C=C/CCCCCCCCN QGLWBTPVKHMVHM-KTKRTIGZSA-N 0.000 claims description 14
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 14
- 229920003171 Poly (ethylene oxide) Polymers 0.000 claims description 12
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 12
- -1 polyoxyethylene Polymers 0.000 claims description 12
- 239000004372 Polyvinyl alcohol Substances 0.000 claims description 11
- 229920002451 polyvinyl alcohol Polymers 0.000 claims description 11
- 238000000227 grinding Methods 0.000 claims description 10
- 229910052757 nitrogen Inorganic materials 0.000 claims description 10
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 9
- 238000005119 centrifugation Methods 0.000 claims description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 7
- 239000010949 copper Substances 0.000 claims description 7
- WVDDGKGOMKODPV-UHFFFAOYSA-N Benzyl alcohol Chemical compound OCC1=CC=CC=C1 WVDDGKGOMKODPV-UHFFFAOYSA-N 0.000 claims description 6
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 6
- 229910000807 Ga alloy Inorganic materials 0.000 claims description 6
- 229910000846 In alloy Inorganic materials 0.000 claims description 6
- DPDMMXDBJGCCQC-UHFFFAOYSA-N [Na].[Cl] Chemical compound [Na].[Cl] DPDMMXDBJGCCQC-UHFFFAOYSA-N 0.000 claims description 6
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 claims description 6
- 235000019445 benzyl alcohol Nutrition 0.000 claims description 6
- 229960004217 benzyl alcohol Drugs 0.000 claims description 6
- 229920001577 copolymer Polymers 0.000 claims description 6
- CDZGJSREWGPJMG-UHFFFAOYSA-N copper gallium Chemical compound [Cu].[Ga] CDZGJSREWGPJMG-UHFFFAOYSA-N 0.000 claims description 6
- ZZEMEJKDTZOXOI-UHFFFAOYSA-N digallium;selenium(2-) Chemical compound [Ga+3].[Ga+3].[Se-2].[Se-2].[Se-2] ZZEMEJKDTZOXOI-UHFFFAOYSA-N 0.000 claims description 6
- AKUCEXGLFUSJCD-UHFFFAOYSA-N indium(3+);selenium(2-) Chemical compound [Se-2].[Se-2].[Se-2].[In+3].[In+3] AKUCEXGLFUSJCD-UHFFFAOYSA-N 0.000 claims description 6
- 238000003801 milling Methods 0.000 claims description 6
- 230000003647 oxidation Effects 0.000 claims description 6
- 238000007254 oxidation reaction Methods 0.000 claims description 6
- IRPLSAGFWHCJIQ-UHFFFAOYSA-N selanylidenecopper Chemical compound [Se]=[Cu] IRPLSAGFWHCJIQ-UHFFFAOYSA-N 0.000 claims description 6
- 239000007858 starting material Substances 0.000 claims description 6
- 239000002105 nanoparticle Substances 0.000 abstract description 13
- 239000000126 substance Substances 0.000 abstract description 6
- 239000000203 mixture Substances 0.000 abstract description 4
- 238000006243 chemical reaction Methods 0.000 abstract description 3
- 239000002994 raw material Substances 0.000 abstract description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 abstract 2
- 229910008772 Sn—Se Inorganic materials 0.000 abstract 1
- 238000001914 filtration Methods 0.000 abstract 1
- 238000000926 separation method Methods 0.000 abstract 1
- 239000011780 sodium chloride Substances 0.000 abstract 1
- 238000009210 therapy by ultrasound Methods 0.000 abstract 1
- 239000002699 waste material Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 description 19
- 239000000243 solution Substances 0.000 description 18
- 238000004519 manufacturing process Methods 0.000 description 15
- 238000010521 absorption reaction Methods 0.000 description 13
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 description 9
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 8
- 238000000151 deposition Methods 0.000 description 8
- QNWMNMIVDYETIG-UHFFFAOYSA-N gallium(ii) selenide Chemical compound [Se]=[Ga] QNWMNMIVDYETIG-UHFFFAOYSA-N 0.000 description 8
- 230000008569 process Effects 0.000 description 6
- 229920002689 polyvinyl acetate Polymers 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 238000007639 printing Methods 0.000 description 4
- 238000005245 sintering Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 230000007613 environmental effect Effects 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- PCRGAMCZHDYVOL-UHFFFAOYSA-N copper selanylidenetin zinc Chemical compound [Cu].[Zn].[Sn]=[Se] PCRGAMCZHDYVOL-UHFFFAOYSA-N 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000010298 pulverizing process Methods 0.000 description 2
- 229910000058 selane Inorganic materials 0.000 description 2
- 238000010189 synthetic method Methods 0.000 description 2
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000005083 Zinc sulfide Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Inks, Pencil-Leads, Or Crayons (AREA)
- Manufacture Of Metal Powder And Suspensions Thereof (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (3)
Priority Applications (1)
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CN201310119088.4A CN103214901B (zh) | 2013-04-08 | 2013-04-08 | 一种制备铜铟镓硒墨水的方法 |
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CN201310119088.4A CN103214901B (zh) | 2013-04-08 | 2013-04-08 | 一种制备铜铟镓硒墨水的方法 |
Publications (2)
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CN103214901A true CN103214901A (zh) | 2013-07-24 |
CN103214901B CN103214901B (zh) | 2014-11-12 |
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Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN108039392A (zh) * | 2017-11-06 | 2018-05-15 | 北京汉能薄膜发电技术有限公司 | 铜铟镓硒化合物、油墨及其薄膜吸收层制备方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2040305A2 (en) * | 2007-09-18 | 2009-03-25 | LG Electronics Inc. | Ink for forming thin film for solar cells and method for preparing the same, CIGS thin film solar cell using the same and manufacturing method thereof |
CN101944556A (zh) * | 2010-09-17 | 2011-01-12 | 浙江尚越光电科技有限公司 | 一种高均匀度铜铟镓硒吸收层制备方法 |
US20120080091A1 (en) * | 2010-10-04 | 2012-04-05 | Byoung Koun Min | Fabrication of cis or cigs thin film for solar cells using paste or ink |
CN102439096A (zh) * | 2009-05-21 | 2012-05-02 | 纳幕尔杜邦公司 | 制备硫化铜锡和硫化铜锌锡薄膜的方法 |
CN102569514A (zh) * | 2012-01-04 | 2012-07-11 | 中国科学院合肥物质科学研究院 | 一种制备铜铟镓硒太阳能电池光吸收层的方法 |
CN102593252A (zh) * | 2012-02-23 | 2012-07-18 | 中国科学院合肥物质科学研究院 | 一种制备铜锌锡硫薄膜太阳能电池光吸收层的方法 |
-
2013
- 2013-04-08 CN CN201310119088.4A patent/CN103214901B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2040305A2 (en) * | 2007-09-18 | 2009-03-25 | LG Electronics Inc. | Ink for forming thin film for solar cells and method for preparing the same, CIGS thin film solar cell using the same and manufacturing method thereof |
CN102439096A (zh) * | 2009-05-21 | 2012-05-02 | 纳幕尔杜邦公司 | 制备硫化铜锡和硫化铜锌锡薄膜的方法 |
CN101944556A (zh) * | 2010-09-17 | 2011-01-12 | 浙江尚越光电科技有限公司 | 一种高均匀度铜铟镓硒吸收层制备方法 |
US20120080091A1 (en) * | 2010-10-04 | 2012-04-05 | Byoung Koun Min | Fabrication of cis or cigs thin film for solar cells using paste or ink |
CN102569514A (zh) * | 2012-01-04 | 2012-07-11 | 中国科学院合肥物质科学研究院 | 一种制备铜铟镓硒太阳能电池光吸收层的方法 |
CN102593252A (zh) * | 2012-02-23 | 2012-07-18 | 中国科学院合肥物质科学研究院 | 一种制备铜锌锡硫薄膜太阳能电池光吸收层的方法 |
Non-Patent Citations (1)
Title |
---|
武素梅: "机械合金法研制铜铟硒类光伏粉体材料", 《中国博士学位论文全文数据库 工程科技I辑》, no. 5, 15 May 2012 (2012-05-15) * |
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CN103214901B (zh) | 2014-11-12 |
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Effective date of registration: 20170726 Address after: 224200, room 609, building 9, Dongcheng Road, Chengdong new district, Jiangsu, Dongtai Patentee after: DONGTAI CHAOPIN PHOTOELECTRIC MATERIALS Co.,Ltd. Address before: 214192 Xishan City, Xishan Province Economic and Technological Development Zone, Wuxi Furong Road No. 99, No., No. three Patentee before: WUXI XUMATIC NEW ENERGY TECHNOLOGY CO.,LTD. |
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Address after: 224200 Chengdong new district, Dongtai City, Jiangsu Province, No. 88 Patentee after: Jiangsu super product Optoelectronic Technology Co.,Ltd. Address before: 224200, room 609, building 9, Dongcheng Road, Chengdong new district, Jiangsu, Dongtai Patentee before: DONGTAI CHAOPIN PHOTOELECTRIC MATERIALS Co.,Ltd. |
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Effective date of registration: 20210512 Address after: 312030 Building 2, Daxizhuang village, Huashe street, Keqiao District, Shaoxing City, Zhejiang Province Patentee after: Zhejiang Hongkang Semiconductor Technology Co.,Ltd. Address before: No.88, Jingyi Road, Chengdong new district, Dongtai City, Jiangsu Province 224200 Patentee before: Jiangsu super product Optoelectronic Technology Co.,Ltd. |
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Effective date of registration: 20240822 Address after: No. 115, Group 22, Kangzhuang Village, Dayou Town, Xiangshui County, Yancheng City, Jiangsu Province, 224600 Patentee after: Xu Congkang Country or region after: China Address before: 312030 Building 2, Daxizhuang village, Huashe street, Keqiao District, Shaoxing City, Zhejiang Province Patentee before: Zhejiang Hongkang Semiconductor Technology Co.,Ltd. Country or region before: China |
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Effective date of registration: 20240830 Address after: 3rd floor, building 17, 341000 standard workshop (Jinling science and Technology Park), Ganzhou economic and Technological Development Zone, Ganzhou City, Jiangxi Province Patentee after: Ganzhou Youmo Technology Co.,Ltd. Country or region after: China Address before: No. 115, Group 22, Kangzhuang Village, Dayou Town, Xiangshui County, Yancheng City, Jiangsu Province, 224600 Patentee before: Xu Congkang Country or region before: China |