CN103208575B - High-transmittance packaged LED (light emitting diode) - Google Patents
High-transmittance packaged LED (light emitting diode) Download PDFInfo
- Publication number
- CN103208575B CN103208575B CN201210011125.5A CN201210011125A CN103208575B CN 103208575 B CN103208575 B CN 103208575B CN 201210011125 A CN201210011125 A CN 201210011125A CN 103208575 B CN103208575 B CN 103208575B
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- CN
- China
- Prior art keywords
- light emitting
- emitting diode
- refractory layer
- high penetration
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Abstract
The invention discloses a high-transmittance packaged LED which comprises a substrate, a light emitting element, a lead unit and a heat-resistant layer. The light emitting element is formed on the substrate; the lead unit is connected with the substrate and the light emitting element; and the heat-resistant layer is at least formed on the light emitting diode and comprises light-transmitting silicon resin and 0.1%-10% of epoxy silicane by weight. Therefore, the heat-resistant layer is good in adhesive effect, high in transmittance, yellowing-free and capable of prolonging the service life of the high-transmittance packaged LED.
Description
Technical field
The present invention relates to a kind of light emitting diode, the encapsulating light emitting diode of more particularly to a kind of high penetration.
Background technology
Light emitting diode (LED) has a multinomial advantage compared to conventional incandescent light, power saving, small volume, long service life,
Efficiency high, and the advantages of low stain, make light emitting diode become the preferred plan replacing existing luminaire.
The chip of light emitting diode is not because itself have the protective effects such as antioxidation, anti-moisture it is therefore desirable to first by this crystalline substance
Piece encapsulation can use.The processing procedure of encapsulation is, using several metal wires, several electrodes of this chip are connected respectively to a base
On plate, this chip is enable to utilize the several solder joints on this substrate to be connected and then luminous with the extraneous circuit that formed.
As shown in figure 1, an existing encapsulating light emitting diode comprises a substrate 11, chip 12, several metals
Line 13, and a photic zone 14.This chip 12 is formed on this substrate 11.Aforementioned metal line 13 connects this chip 12 respectively and is somebody's turn to do
Substrate 11, is enable the electronic loop of this chip 12 to be transferred to after this substrate 11 using aforementioned metal line 13 and is electrically connected with the external world.
This photic zone 14 is formed on this chip 12 and this substrate 11, and this photic zone 14 can make the light penetration that this chip 12 sends, and reaches
To the function of illumination, protect this chip simultaneously.
However, the composition of this photic zone 14 is mainly epoxy (Epoxy) resin or silicon profit light (Silicone) resin.Epoxy
Resin itself contains the aromatic series benzene ring structure that can absorb ultraviolet, can be because phenyl ring is inhaled using this epoxy resin after a period of time
Receive ultraviolet (UV) or heat absorption is aging and produce xanthochromia, cause the penetrance of this photic zone 14 to decline fall, luminance-reduction.And silicon profit light
The mechanical strength of resin is less than epoxy resin, and poor with the cohesive of this chip 12, its refractive index between 1.4 to 1.5, therefore
Big with the refractive index difference of this chip 12, make penetrance relatively low and brightness is relatively low.
Content of the invention
It is an object of the invention to provide a kind of will not xanthochromia high penetration encapsulating light emitting diode.
The encapsulating light emitting diode of high penetration of the present invention comprises a substrate, light-emitting component, a lead wire unit,
And a refractory layer.This light-emitting component is formed on the substrate.This lead wire unit connects this substrate and this light-emitting component.This is heat-resisting
Layer is at least formed on this light-emitting component and the composition of this refractory layer includes silicon profit photopolymer resin and 0.1% to 10% percentage by weight
Epoxy radicals silicone hydride (Epoxysilane), this refractory layer is not because have phenyl ring, thus without xanthochromia.And this epoxy radicals silicone hydride
It is selected from logical formula (I) or logical formula (II)：
Wherein, R is CH3 alkyl.
Whereby, this refractory layer is made to have preferably cohesive and higher penetrance, the encapsulation that can improve this high penetration is sent out
The service life of optical diode.
It is preferred that the composition of this refractory layer also includes nanometer grade silica or the silicone of 0% to 20% percentage by weight
Pulvis Talci.
It is preferred that this refractory layer is formed on this light-emitting component and this substrate using dispensing mode and coats this lead list
Unit.
It is preferred that this light-emitting component is a gallium nitride wafer.
It is preferred that this lead wire unit is several metal wires.
It is preferred that this refractory layer is made only on this light-emitting component, and the encapsulating light emitting diode of this high penetration also wraps
It is formed on this refractory layer and this substrate and coats the photic zone of this lead wire unit containing one.
It is preferred that this refractory layer is formed by sputtering way.
It is preferred that the thickness of this refractory layer is 0.5um to 1mm.
It is preferred that this photic zone is formed by injection molding method.
It is preferred that this euphotic composition includes Merlon or polymethyl methacrylate.
It is preferred that this photic zone also includes the fluorescent whitening agent of 1ppm to 0.1% percentage by weight.
It is preferred that this photic zone also includes the epoxy radicals silicone hydride of 0.1% to 10% percentage by weight.
The beneficial effects of the present invention is：Relatively strong and there is no phenyl ring by the bond of this epoxy radicals silicone hydride, not oxidizable and
More heat-resisting, make this refractory layer will not xanthochromia.Meanwhile, this epoxy radicals silicone hydride makes this refractory layer preferable with the cohesive of this light-emitting component
And penetrance is higher, make the encapsulating light emitting LED lighting efficiency of this high penetration preferable.
Brief description
Fig. 1 is a profile, and an existing encapsulating light emitting diode is described；
Fig. 2 is a profile, and first preferred embodiment of the light emitting diode of the high penetration of the present invention is described；
Fig. 3 is a profile, and second preferred embodiment of the present invention is described；
Fig. 4 is the curve chart that a weight percent compares penetrance, illustrates resistance to obtained by a preparation example of the present invention
The distribution of epoxy radicals silicone hydride weight percent concentration and its penetrance graph of relation of thermosphere material；
Fig. 5 is the curve chart to penetrance for the concentration, and the refractory layer obtained by another preparation example of the present invention is described
The nanometer grade silica concentration distribution of material and its penetrance graph of relation.
Specific embodiment
Below in conjunction with the accompanying drawings and embodiment the present invention is described in detail.
For the present invention aforementioned and other technology contents, feature and effect, at two of following cooperation refer to the attached drawing relatively
Good embodiment, four preparation examples, and in the detailed description of two concrete examples, be possible to clearly present.
Before the present invention is described in detail it is noted that, in the following description content, similar element is with phase
With numbering representing.
As shown in Fig. 2 first preferred embodiment of the encapsulating light emitting diode of high penetration of the present invention comprises one
Substrate 3, lead wire unit 4 of 2, light-emitting component, and a refractory layer 5.
In this first preferred embodiment, this light-emitting component 3 is a gallium nitride wafer and is formed on this substrate 2, should
Lead wire unit 4 connects this substrate 2 and this light-emitting component 3, and in this first preferred embodiment, this lead wire unit 4 is several gold threads,
Aforementioned gold thread is connected on this substrate 2 by this light-emitting component 3 respectively.
This refractory layer 5 is formed on this light-emitting component 3, this substrate 2 by dispensing mode and coats this lead wire unit 4 simultaneously,
The composition of this refractory layer 5 includes silicon profit photopolymer resin, the epoxy radicals silicone hydride of 0.1% to 10% percentage by weight, and 0% to 20% weight
The nanometer grade silica (nano-silicon dioxide) of amount percentage ratio or Silicone Powder (Silicone powder).
This epoxy radicals silicone hydride is selected from logical formula (I) or logical formula (II)：
Wherein, R is CH3Alkyl.
This epoxy radicals silicone hydride can make the intensity of this refractory layer 5 improve simultaneously, the epoxy radicals silicone hydride content in this refractory layer 5
For 0.1% to 10% percentage by weight, the epoxy radicals silicone hydride often increasing by 0.1% can make the penetrance of this refractory layer 5 decline
0.1%, therefore unsuitable excessive.
The content of this nanometer grade silica or Silicone Powder is 0% to 20% percentage by weight, this nanoscale dioxy
SiClx and Silicone Powder all have the stronger bond of Si-O-Si respectively, and the mechanical strength of this refractory layer 5 can be made to improve, but
Content excessively can make penetrance decline.
As shown in figure 3, second preferred embodiment of the encapsulating light emitting diode of high penetration of the present invention comprises one
2, light-emitting component of substrate, 4, refractory layer 5 of 3, lead wire unit, and a photic zone 6.
This second preferred embodiment is roughly the same with the structure of this first preferred embodiment, and Main Differences are this refractory layer
5 generation type and position differ, this photic zone 6 more than this second preferred embodiment.
In this second preferred embodiment, forming thickness only on this light-emitting component 3 by radio frequency sputtering way is 0.5um
To the refractory layer 5 of 1mm, the composition of this refractory layer 5 is identical with this first preferred embodiment.In addition to radio frequency sputtering way, also can
Enough using other sputtering way, this refractory layer 5 is formed on this light-emitting component 3.
Again this photic zone 6 is formed in this refractory layer 5, this lead wire unit 4, and this substrate 2 by injection molding method.Should
The composition of photic zone 6 includes Merlon (PC) or polymethyl methacrylate (PMMA), and this photic zone 6 also includes 1ppm extremely
The fluorescent whitening agent of 0.1% percentage by weight and the epoxy radicals silicone hydride of 0.1% to 10% percentage by weight.But this photic zone 6
This fluorescent whitening agent or this epoxy radicals silicone hydride can not be included.The other structures of this second preferred embodiment and this first preferable reality
Apply an all same, will not be described here.
Following four preparation example is the method preparing this heat-resisting layer material, and the ethylene that the preparation example such as this is used below
Key silica-base material and hydrogen bond silica-base material are silicon profit photopolymer resin, and this is material well known in the prior art.
<Preparation example one>
A () (Silane, purchased from German Waker, model by the silane of vinyl chloride (moulding purchased from platform) the addition 15000g of 258g
62M) and 3/1000ths catalyst potassium hydroxide (KOH), stirring mixing at 120 DEG C of temperature can get 15250g's in 30 minutes
Ethylenic linkage silica-base material (Vinylsilicone).Because in course of reaction, part material participates in reaction and is consumed, therefore weight meeting
Reduce.
B the ethylenic linkage silica-base material of wherein 15000g is added the epoxy radicals silicone hydride of 236g (purchased from German Waker, type by ()
Number S510), stirring mixing at 25 DEG C of temperature can access the A glue of 15236g for 10 minutes.Now, ethylenic linkage silica-base material with
Epoxy radicals silicone hydride will not interreaction.The chemical formula of this epoxy radicals silicone hydride is as follows：
C the hydrogen bond silica-base material (Hydroxysilicone, purchased from German Waker, model 62M) of 15000g is added by ()
The acetic anhydride (Acetic anhydride, purchased from German Waker) of 102g, and ten thousand/concentration catalyst metal platinum (Pt,
Purchased from German Waker), stirring mixing at 25 DEG C of temperature can access the B glue of 15102g for 10 minutes.Now, hydrogen bond silicon substrate
Material, acetic anhydride, and metal platinum can interreaction.
(d) by the A glue of 15236g add 15102g B glue and at 25 DEG C of temperature stirring mixing 10 minutes, make A glue and B
Glue produces polyreaction and obtains the copolymer of 30338g.This copolymer is the material of this refractory layer and has 0.78% ring
TMOS.
<Preparation example two>
A () is same<Preparation example one>The method described in (a), obtain the ethylenic linkage silica-base material of 15250g.
B the ethylenic linkage silica-base material of wherein 15000g is added the epoxy radicals silicone hydride of 220g (purchased from German Waker, type by ()
Number S520), stirring mixing at 25 DEG C of temperature can access the A glue of 15236g for 10 minutes.Now, ethylenic linkage silica-base material with
Epoxy radicals silicone hydride will not interreaction.The chemical formula of this epoxy radicals silicone hydride is as follows：
C () is same<Preparation example one>The method described in (c), obtain the B glue of 15102g.
(d) by the A glue of 15220g add 15102g B glue and at 25 DEG C of temperature stirring mixing 10 minutes, make A glue and B
Glue produces polyreaction and obtains the copolymer of 30322g.This copolymer has 0.73% epoxy radicals silicone hydride.
<Preparation example three>
A () is same<Preparation example one>The method described in (a), obtain the ethylenic linkage silica-base material of 15250g.
B the ethylenic linkage silica-base material of wherein 15000g is added the epoxy radicals silicone hydride of 736g by (), stir at 25 DEG C of temperature
Mixing can access the A glue of 15736g for 10 minutes.Now, ethylenic linkage silica-base material and epoxy radicals silicone hydride will not interreactions.
The chemical formula of this epoxy radicals silicone hydride is as follows：
C () is same<Preparation example one>The method described in (c), obtain the B glue of 15102g.
(d) by the A glue of 15736g add 15102g B glue and at 25 DEG C of temperature stirring mixing 10 minutes, make A glue and B
Glue produces polyreaction and obtains the copolymer of 30838g.This copolymer has 2.38% epoxy radicals silicone hydride.
<Preparation example four>
A () is same<Preparation example one>The method described in (a), obtain the ethylenic linkage silica-base material of 15250g.
B the ethylenic linkage silica-base material of wherein 15000g is added nanometer grade silica (the Nano SiO of 30g by ()2, it is purchased from
German Waker), stirring at 100 DEG C of temperature is built bridge 10 minutes, and epoxy radicals silicone hydride (model S510) stirring adding 236g is mixed
The A glue of 15266g can be accessed after conjunction.
C () is same<Preparation example one>The method described in (c), obtain the B glue of 15102g.
(d) by the A glue of 15266g add 15102g B glue and at 25 DEG C of temperature stirring mixing 10 minutes, make A glue and B
Glue produces polyreaction and obtains the epoxy silicon profit photopolymer resin of 30368g.This epoxy silicon profit photopolymer resin has 0.099% titanium dioxide
Silicon, and 0.78% epoxy radicals silicone hydride.
Pass through<Preparation example one>The A glue obtained by method and B glue, A glue is mixed in varing proportions with B glue, obtains many
Several heat-resisting layer materials being respectively provided with 1% to 10% percentage by weight epoxy radicals silicone hydride, these heat-resisting layer materials are worn
The measurement of rate, obtains the curve chart as Fig. 4 thoroughly.
As shown in figure 4, when this epoxy radicals silicone hydride content is 1%, the penetrance of this refractory layer 5 is about 91%；When this ring
When TMOS content is 10%, the penetrance of this refractory layer 5 is about 82%, and penetrance starts to ease up, therefore this refractory layer 5
Interior epoxy radicals silicone hydride content is with 0.1% to 10% percentage by weight as preferred range, and this content is when 3% to 5%, and it is worn
Rate is optimal thoroughly.
Pass through again<Preparation example four>Method, add the nanometer grade silica of Different Weight so that different A glue are obtained, then
After mixing respectively with B glue, obtain how several heat-resisting layer materials being respectively provided with 0% to 20% concentration nanometer grade silica, will
These heat-resisting layer materials carry out the measurement of penetrance, obtain the curve chart as Fig. 5.
As shown in figure 5, when the content of this nanometer grade silica is 1%, the penetrance of this refractory layer 5 is about 89%；Should
When the content of nanometer grade silica is 20%, the penetrance of this refractory layer 5 is about 78%, and penetrance starts to ease up, therefore,
The content of this nanometer grade silica or Silicone Powder with less than 20% percentage by weight as preferred range.
<Concrete example one>
A one gallium nitride wafer is formed on one substrate by (), and make several gold threads connect this substrate and this chip, this
Step is to be carried out using existing encapsulation procedure, is not the emphasis of the present invention, therefore here does not repeat.
B () will<Preparation example one>The obtained copolymer containing 0.78% epoxy radicals silicone hydride utilizes dispensing mode in this crystalline substance
After forming a refractory layer on piece, this substrate, and aforementioned gold thread, that is, be formed as encapsulating light emitting two pole of the high penetration of the present invention
Pipe.
C the encapsulating light emitting diode of this high penetration is toasted 1 hour at 150 DEG C by (), make the polymerization of this copolymer anti-
Should complete.
<Concrete example two>
A () is same<Concrete example one>The method described in (a), be formed with a chip and several gold threads on one substrate.
B () will<Preparation example one>Obtained copolymer makes a target, recycles radio frequency sputtering way by this copolymerization
Thing forms the refractory layer that a thickness is 0.5um on this wafer.But step (b) also first can be carried out before step (a), first exist
After this refractory layer is formed on this chip, then by this chip and this etc. gold thread be sequentially respectively formed on substrate.
C the chip of previous step and substrate are toasted 1 hour at 150 DEG C by (), make the polyreaction of this copolymer complete
Become.
D Merlon is formed a printing opacity using ejection formation in this refractory layer, this lead wire unit, and this substrate by ()
After layer, that is, form the encapsulating light emitting diode of the high penetration of the present invention.
In sum, avoid xanthochromia and improve service life by this refractory layer 5 without phenyl ring, and utilize epoxy radicals
The characteristic of silane increases the bonding effect of this refractory layer and this light-emitting component, can improve the mechanical strength of this refractory layer simultaneously, therefore
Really the purpose of the present invention can be reached.
Claims (13)
1. the encapsulating light emitting diode of a kind of high penetration, comprise a substrate, one formed light-emitting component on the substrate,
One connect the lead wire unit of this substrate and this light-emitting component, one at least formed at the refractory layer on this light-emitting component, it is special
Levy and be：
The composition of this refractory layer includes the epoxy radicals silicone hydride of silicon profit photopolymer resin and 0.1% to 10% percentage by weight, and this epoxy
Base silane is selected from logical formula (I) or logical formula (II)：
Wherein, R is CH3Alkyl.
2. high penetration according to claim 1 encapsulating light emitting diode it is characterised in that：The composition of this refractory layer is also
Nanometer grade silica including 0% to 20% percentage by weight or Silicone Powder.
3. high penetration according to claim 1 and 2 encapsulating light emitting diode it is characterised in that：This refractory layer utilizes
Dispensing mode is formed on this light-emitting component and this substrate and coats this lead wire unit.
4. high penetration according to claim 3 encapsulating light emitting diode it is characterised in that：This light-emitting component is one
Gallium nitride wafer.
5. high penetration according to claim 4 encapsulating light emitting diode it is characterised in that：This lead wire unit is several
Metal wire.
6. high penetration according to claim 1 and 2 encapsulating light emitting diode it is characterised in that：This refractory layer only shape
Become on this light-emitting component, and the encapsulating light emitting diode of this high penetration also comprises one and is formed at this refractory layer and this substrate
Go up and coat the photic zone of this lead wire unit.
7. high penetration according to claim 6 encapsulating light emitting diode it is characterised in that：This refractory layer passes through sputter
Mode is formed.
8. high penetration according to claim 7 encapsulating light emitting diode it is characterised in that：The thickness of this refractory layer is
0.5um to 1mm.
9. high penetration according to claim 8 encapsulating light emitting diode it is characterised in that：This photic zone passes through to project
Molding mode is formed.
10. high penetration according to claim 9 encapsulating light emitting diode it is characterised in that：This euphotic composition
Including Merlon or polymethyl methacrylate.
The encapsulating light emitting diode of 11. high penetrations according to claim 10 it is characterised in that：This photic zone also includes
The fluorescent whitening agent of 1ppm to 0.1% percentage by weight.
The encapsulating light emitting diode of 12. high penetrations according to claim 10 it is characterised in that：This photic zone also includes
The epoxy radicals silicone hydride of 0.1% to 10% percentage by weight.
The encapsulating light emitting diode of 13. high penetrations according to claim 11 it is characterised in that：This photic zone also includes
The epoxy radicals silicone hydride of 0.1% to 10% percentage by weight.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210011125.5A CN103208575B (en) | 2012-01-13 | 2012-01-13 | High-transmittance packaged LED (light emitting diode) |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210011125.5A CN103208575B (en) | 2012-01-13 | 2012-01-13 | High-transmittance packaged LED (light emitting diode) |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103208575A CN103208575A (en) | 2013-07-17 |
| CN103208575B true CN103208575B (en) | 2017-02-08 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210011125.5A Expired - Fee Related CN103208575B (en) | 2012-01-13 | 2012-01-13 | High-transmittance packaged LED (light emitting diode) |
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| Country | Link |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101525467A (en) * | 2009-04-03 | 2009-09-09 | 复旦大学 | Epoxy/organosilicon hybrid material, and preparation method and application thereof |
| CN101525466A (en) * | 2009-04-03 | 2009-09-09 | 复旦大学 | Epoxy/organosilicon/inorganic nano-hybrid material, and preparation method and application thereof |
| CN102002237A (en) * | 2009-09-01 | 2011-04-06 | 信越化学工业株式会社 | White heat-curable silicone/epoxy hybrid resin composition |
-
2012
- 2012-01-13 CN CN201210011125.5A patent/CN103208575B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101525467A (en) * | 2009-04-03 | 2009-09-09 | 复旦大学 | Epoxy/organosilicon hybrid material, and preparation method and application thereof |
| CN101525466A (en) * | 2009-04-03 | 2009-09-09 | 复旦大学 | Epoxy/organosilicon/inorganic nano-hybrid material, and preparation method and application thereof |
| CN102002237A (en) * | 2009-09-01 | 2011-04-06 | 信越化学工业株式会社 | White heat-curable silicone/epoxy hybrid resin composition |
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| Publication number | Publication date |
|---|---|
| CN103208575A (en) | 2013-07-17 |
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