CN103208505A - Display unit - Google Patents
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- CN103208505A CN103208505A CN2013100589524A CN201310058952A CN103208505A CN 103208505 A CN103208505 A CN 103208505A CN 2013100589524 A CN2013100589524 A CN 2013100589524A CN 201310058952 A CN201310058952 A CN 201310058952A CN 103208505 A CN103208505 A CN 103208505A
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- 239000012044 organic layer Substances 0.000 claims description 28
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
- G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
- G09G3/3233—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1216—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
- H10K59/353—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels characterised by the geometrical arrangement of the RGB subpixels
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/04—Structural and physical details of display devices
- G09G2300/0439—Pixel structures
- G09G2300/0452—Details of colour pixel setup, e.g. pixel composed of a red, a blue and two green components
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
- G09G2300/0809—Several active elements per pixel in active matrix panels
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S428/00—Stock material or miscellaneous articles
- Y10S428/917—Electroluminescent
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Control Of El Displays (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
Abstract
A display unit is provided. The display unit includes a display section having a plurality of organic EL devices with light emitting color different from each other and a plurality of pixel circuits that are singly provided for every said organic EL device for every pixel. The pixel circuit has a first transistor for writing a video signal, a second transistor for driving the organic EL device based on the video signal written by the first transistor, and a retentive capacity, and out of the first transistor and the second transistor, a third transistor provided correspondingly to a second organic EL device adjacent to a first organic EL device is arranged farther from the first organic EL device than a first retentive capacity provided correspondingly to the second organic EL device out of the retentive capacity.
Description
The application is that application number is 201010129080.2, the applying date is on March 8th, 2010, denomination of invention is divided an application for the application for a patent for invention of " display unit ".
Technical field
The present invention relates to a kind of display unit that comprises organic EL (electroluminescence) device.
Background technology
Recent years, in the field of display units that shows image, developed and comprised that current drive-type Optical devices (such as organic El device) that emission light can change according to the streaming current value are as the display unit of the light emitting devices of pixel, and this display unit is by commercialization manufacturing (for example, seeing the open No.2008-083272 of Japanese unexamined patent).
Organic El device is the selfluminous device different with liquid-crystal apparatus etc.Therefore, the display unit (organic EL display unit) that comprises organic El device does not need light source (backlight).Therefore, in organic EL display unit, compare with the liquid crystal display that needs light source, image visibility is higher, and power consumption is lower and the device response speed is higher.
Drive system in organic EL display unit equally comprises simply (passive) matrix system and active matrix system with liquid crystal display.Previous system has the shortcoming of the display unit that is difficult to realize big and higher resolution, though it is relatively simple for structure.Therefore, actively researched and developed active matrix system at present.In such system, the electric current of the light-emitting device that arranges for each pixel of flowing through is by being the active device control in the set drive circuit of each light-emitting device (being generally TFT (thin-film transistor)).
Figure 15 illustrates the schematic configuration of general organic EL display unit.Display unit 100 shown in Figure 15 comprises wherein with the display part 110 of a plurality of pixels 120 of matrix state arrangement and the drive part (horizontal drive circuit 130, write scanning circuit 140 and power source scanning circuit 150) that is used for driving each pixel 120.
Each pixel 120 is made up of with pixel 120B with pixel 120G and blueness with pixel 120R, green redness.Shown in Figure 16 and 17, pixel 120R, 120G and 120B are made up of organic El device 121 ( organic El device 121R, 121G and 121B) and the image element circuit 122 that is connected to it.Figure 16 illustrates the circuit structure of pixel 120R, 120G and 120B.Figure 17 illustrates the layout of pixel 120R, 120G and 120B.
Summary of the invention
Figure 18 diagram is along the example of the obtained profile construction of the line A-A of Figure 17.In the part corresponding with the line A-A among Figure 17, pixel 120R, 120G and 120B have gate insulating film 112, insulating protective film 113 and insulation planar film 114 at substrate 111.Between substrate 111 and gate insulating film 112, be formed with grid 124A (terminal 125A) and grid 123A.
In between gate insulating film 112 and the insulating protective film 113 and position directly over the grid 124A, be formed with raceway groove 131, source electrode 132 and 124B, drain electrode 133 and 124C and diaphragm 134.Raceway groove 131 forms with gate insulating film 112 directly over the grid 124A and contacts.In between gate insulating film 112 and the insulating protective film 113 and position directly over the grid 123A, be formed with raceway groove 135, drain electrode 136 and 123C, source electrode 137 and 123B and diaphragm 138.
On insulation planar film 114, form organic El device 121.Organic El device 121 has such structure, for example wherein anode 127A, organic layer 127C and negative electrode 127B in order from substrate 111 side laminations.With the coplanar plane of anode 127A in, be provided with the auxiliary distribution 117 of negative electrode, has to fixed gap between the auxiliary distribution 117 of anode 127A and negative electrode.Between anode 127A and the auxiliary distribution 117 of negative electrode, has aperture 117A.
Organic El device 121 has such structure, for example wherein anode 127A, organic layer 127C and negative electrode 127B in order from substrate 111 side laminations, as shown in figure 18.Anode 127A has the function as the reflector, and negative electrode 127B has the function as the Transflective layer.Anode 127A and negative electrode 127B form oscillator structure, the light vibration that produces in its feasible luminescent layer (not shown) that is included among the organic layer 127C.That is, the surface on the organic layer 127C side of the surface on the organic layer 127C side of anode 127A and negative electrode 127B constitutes a pair of speculum.The light that produces in luminescent layer is by this a pair of mirror oscillates, and draws from negative electrode 127B side.Thereby the light that produces in luminescent layer produces multiple interference, and described oscillator structure is as a kind of narrow band filter.Thereby the half-wave zone frequency spectrum of the light of drawing reduces, and has improved colour purity.
With the coplanar plane of the anode 127A of organic El device 121 in, form the aperture and judge dielectric film 115.On organic El device 121, form insulating protective film 116.The aperture judges that dielectric film 115 has the aperture corresponding with anode 127A (EL aperture 115A).EL aperture 115A partly is formed in the zone opposite with the upper surface of anode 127A.The aperture judges that dielectric film 115 covers the outer rim (periphery) of anode 127A.That is, on the bottom surface of EL aperture 115A, only part exposes the upper surface of anode 127A.Expose portion on the bottom surface of organic layer 127C and the EL aperture 115A of the upper surface outside of anode 127A contacts.
With the coplanar plane of anode 127A in, be formed with around the auxiliary distribution 117 of the negative electrode of anode 127A around anode 127A.The auxiliary distribution 117 of negative electrode is configured such that the face built-in potential of negative electrode 127B is evenly distributed, and is electrically connected to negative electrode 127B.The auxiliary distribution 117 of negative electrode is arranged so that between the auxiliary distribution 117 of negative electrode and the anode 127A to have given gap, and aperture 117A is between the auxiliary distribution 117 of negative electrode and anode 127A.Thereby the auxiliary distribution 117 of negative electrode keeps insulation characterisitic with respect to anode 127A.
As shown in figure 18, a part of light L in the light that produces in luminescent layer does not export from negative electrode 127B side, but leaks in the adjacent pixels.Leaking the transistor T that light L enters neighbor
DrAnd T
WsRaceway groove 131 in situation under, cause image element circuit 122 misoperations, for example the leakage of light electric current increases.
Particularly, enter at the blue light with short wavelength under the situation of raceway groove 131, the TFT characteristic changing, for example, the critical voltage of grid changes as time passes, causes the long-term reliability of TFT to reduce.(under the situation of μ-Si), the long-term reliability of TFT seriously reduces to comprise amorphous silicon (a-Si) or microcrystal silicon at raceway groove 131.
For example, as shown in figure 19, be included in a pixel 120B in the pixel 120 and be arranged on and be included in the pixel 120G in the described pixel 120 and be included between the pixel 120R in another pixel 120 adjacent with described pixel 120.In the case, the blue light L that leaks from the organic layer 127C of pixel 120B enters the transistor T of pixel 120G
DrTransistor T with pixel 120R
WsIn, cause transistor T
DrAnd T
WsLong-term reliability reduce.
In view of the foregoing, in the present invention, expectation provides the display unit that can avoid long-term reliability to reduce.
According to one embodiment of present invention, a kind of display unit is provided, comprises: the display part, it has the organic El device that a plurality of glow colors differ from one another, also have a plurality of image element circuits, described image element circuit is set to be used to each described organic El device of each pixel setting respectively.Image element circuit has be used to the first transistor that writes vision signal, drives the transistor seconds of organic El device and keep electric capacity for the vision signal that writes based on the first transistor.In the first transistor and transistor seconds outside, be set to be set in abutting connection with the 3rd corresponding transistor of second organic El device of first organic El device than be set to transistor seconds corresponding first keep electric capacity farther from first organic El device.
In display unit according to an embodiment of the invention, be set to be set in abutting connection with corresponding described the 3rd transistor of second organic El device of first organic El device than be set to transistor seconds corresponding first keep electric capacity farther from first organic El device.Therefore, with distance A from the 3rd transistor to first organic El device less than keeping electric capacity to compare to the situation apart from B of organic El device from first, less from the light inlet that the organic layer of first organic El device leaks into the 3rd transistor.
Display unit is compared less than the afore-mentioned of distance B with distance A according to an embodiment of the invention, and the light that the organic layer from first organic El device leaks in the 3rd transistor is less.Thereby, have under the situation of organic layer of light that generation can make the first transistor and transistor seconds degradation at first organic El device, can avoid reducing the 3rd transistorized long-term reliability.
According to following explanation, of the present invention other will more completely be represented with further purpose, feature and advantage.
Description of drawings
Fig. 1 illustrates the schematic diagram of display unit according to an embodiment of the invention.
Fig. 2 is the circuit diagram of the pixel of Fig. 1.
Fig. 3 is the layout that the redness of Fig. 1 is used pixel.
Fig. 4 is the blueness of Fig. 1 is used pixel with pixel and green layout.
Fig. 5 is the layout of the pixel of Fig. 1.
Fig. 6 is the cross-sectional view that the line A-A along the pixel of Fig. 3 cuts open.
Fig. 7 is the cross-sectional view that the line B-B along the pixel of Fig. 3 cuts open.
Fig. 8 is the performance plot of V-I characteristic that the pixel of Fig. 1 is shown.
Fig. 9 is that diagram comprises the plane graph according to the signal structure of the module of the display unit of above-described embodiment.
Figure 10 is that diagram comprises the stereogram of using the outward appearance of example according to first of the display unit of above-described embodiment.
Figure 11 A is the stereogram of the outward appearance of diagram second front side of using example, and the stereogram of the outward appearance of Figure 11 B rear side that to be diagram second use example.
Figure 12 is the stereogram that diagram the 3rd is used the outward appearance of example.
Figure 13 is the stereogram that diagram the 4th is used the outward appearance of example.
Figure 14 A is the front elevation of the 4th application example closure, and Figure 14 B is its end view, and Figure 14 C is the front elevation of the 5th application example closure, and Figure 14 D is its left view, and Figure 14 E is its right view, and Figure 14 F is its vertical view, and Figure 14 G is its upward view.
The schematic configuration figure of the existing display unit of Figure 15.
Figure 16 is the circuit diagram of the pixel of Figure 15.
Figure 17 is the layout of the pixel of Figure 15.
Figure 18 is the cross-sectional view that the line A-A along the pixel of Figure 17 cuts open.
Figure 19 is the layout of the pixel of Figure 15.
Embodiment
Describe embodiments of the invention below with reference to accompanying drawings in detail.Be described with following order:
1. schematic configuration
2. layout
3. cross-sectional configuration
4. operate and effect
5. modified example
6. module and use example
1. schematic configuration
Fig. 1 illustrates the unitary construction example of display unit 1 according to an embodiment of the invention.Display unit 1 comprises display part 10 and is formed at the peripheral circuit part 20 (drive part) of display part 10 peripheries in the substrate of for example being made by glass, silicon (Si) wafer resin etc. 40 (following).
In display part 10, a plurality of pixels 11 are arranged on the whole zone of display part 10 with the matrix state.Display part 10 is by the vision signal 20a demonstration image of driven with active matrix based on the outside input.Each pixel 11 comprises red with pixel 11R, green with pixel 11G and the blue pixel 11B that uses.
Fig. 2 illustrates the example of the circuit structure of pixel 11R, 11G and 11B.In pixel 11R, 11G and 11B, as shown in Figure 2, organic El device 12 (12R, 12G and 12B) and image element circuit 13 are set.The organic El device 12B of this embodiment is equivalent to the concrete example of " first organic El device " of the present invention.The organic El device 12R of this embodiment and 12G are equivalent to the concrete example of " second organic El device " of the present invention.
The transistor T of this embodiment
WsThe concrete example that is equivalent to " the first transistor " of the present invention.The transistor T of this embodiment
DrThe concrete example that is equivalent to " transistor seconds " of the present invention.And, in this embodiment, be included in the transistor T among pixel 11R and the 11G
WsAnd T
DrBe equivalent to the concrete example of " the 3rd transistor " of the present invention, and be to be set to the transistor corresponding with the organic El device 12R of adjacency organic El device 12B and 12G.In addition, in this embodiment, be included in the maintenance capacitor C among pixel 11R and the 11G
sBe equivalent to the concrete example of " first keeps electric capacity " of the present invention, and be the maintenance electric capacity that is set to corresponding to organic El device 12R and 12G.
Peripheral circuit part 20 has timing control circuit 21, horizontal drive circuit 22, writes scanning circuit 23 and power source scanning circuit 24.Timing control circuit 21 comprises and shows signal generating circuit 21A and show signal retentive control circuit 21B.In addition, in peripheral circuit part 20, gate line WSL, drain line DSL, holding wire DTL and earth connection GND are set.Earth connection is intended to be connected to ground connection, and obtains earthed voltage (reference voltage) when earth connection is connected to ground connection.
Show that signal generating circuit 21A is intended to for example be used in the display part the 10 demonstration signal 21a that show for per 1 screen (per 1 demonstration) generates based on the vision signal 20a from the outside input.
Show that signal retentive control circuit 21B is intended to storage and keeps from showing that signal generating circuit 21A is the demonstration signal 21a that per 1 screen (per 1 demonstration) for example outputs to the field memory of being made up of SRAM (static RAM).Show signal retentive control circuit 21B also serve as control so that be used for driving each pixel 11 horizontal drive circuit 22, write scanning circuit 23 and power source scanning circuit 24 role of operation simultaneously each other.Particularly, demonstration signal retentive control circuit 21B outputs to control signal 21b respectively and writes scanning circuit 23, control signal 21c is outputed to power source scanning circuit 24 and control signal 21d is outputed to demonstration signal drive circuit 21C.
Horizontal drive circuit 22 can be according to the control signal 21d output voltage from showing that signal retentive control circuit 21B exports.Particularly, the horizontal drive circuit 22 holding wire DTL that is intended to each pixel 11 by being connected to display part 10 is fed to given voltage by writing the selected pixel 11 of scanning circuit 23.
Power source scanning circuit 24 can be according to the control signal 21c output voltage from showing that signal retentive control circuit 21B exports.Particularly, power source scanning circuit 24 be intended to drain line DSL by each pixel 11 that is connected to display part 10 with given voltage supply as the pixel 11 that drives target, with the luminous of control organic El device 12R etc. with go out light.
2. layout
Then, provide the description of annexation and the layout of each element with reference to figs. 2 to Fig. 5.Fig. 3 illustrates the example of the layout of pixel 11R.Fig. 4 illustrates the example of the layout of pixel 11G and 11B.Fig. 5 illustrates the example of the layout of pixel 11.Fig. 5 illustrate be included in one in the pixel 11 pixel 11G and 11B and be included in pixel 11R in another pixel 11 adjacent with described pixel 11.
At first, the common ground to each pixel 11R, 11G and 11B is described.Follow direction and extend from writing gate line WSL that scanning circuit 23 draws, and be connected to transistor T by contact 34A
WsGrid 31A.The drain line DSL that draws from power source scanning circuit 24 also follows the direction extension, and is connected to transistor T by wiring lead 36A
DrDrain electrode 32C.In addition, the holding wire DTL that draws from horizontal drive circuit 22 extends along column direction, and is connected to transistor T by contact 34B and wiring lead 36B
WsDrain electrode 31C.Transistor T
WsSource electrode 31B be connected to drive and use transistor T
DrGrid 32A and keep capacitor C
sAn end of (terminal 33A).Transistor T
DrSource electrode 32B and keep capacitor C
sAnother end of (terminal 33B) is connected to the anode 35A of organic El device 12 by contact 34D.The negative electrode 35B of organic El device 12 is connected to cathode line CTL.
Then, the point that mainly each pixel 11R, 11G and 11B is differed from one another is described. Pixel 11R, 11G and 11B follow direction in proper order with this and arrange in described pixel 11.That is, pixel 11G is arranged on pixel 11R right side (following direction on pixel 11R right side), and pixel 11B is arranged on pixel 11G right side, and the pixel 11R of another pixel 11 is arranged on pixel 11B right side.
For example, as Fig. 3 and shown in Figure 5, the layout of pixel 11R and the layout of 11B are the minute surface symmetry.Transistor T among the pixel 11R
DrAnd T
WsBe set to than the maintenance capacitor C among the pixel 11R
s Organic El device 11B in neighbor 11B is farther.That is the transistor T among the pixel 11R,
DrAnd T
WsBe arranged on the side opposite with organic El device 11B among the adjacent pixels 11B with respect to line LR, the end of the maintenance capacitor C S outside that is positioned at pixel 11R on described line LR and the pixel 11B contacts and extends along column direction.As shown in Figure 5, the transistor T among the pixel 11R
DrAnd T
WsPreferably be arranged on the side opposite with organic El device 11B among the adjacent pixels 11B with respect to the maintenance capacitor C S of pixel 11R.That is the transistor T among the pixel 11R,
DrAnd T
WsPreferably be arranged in the organic El device 11B zone farthest in the adjacent pixels 11B of pixel 11R outside.
For example, as shown in Figure 4 and Figure 5, the layout of pixel 11G and the layout of 11R are the minute surface symmetry.Transistor T among the pixel 11G
DrAnd T
WsBe set to than the maintenance capacitor C among the pixel 11G
s Organic El device 11B in neighbor 11B is farther.That is the transistor T among the pixel 11G,
DrAnd T
WsBe arranged on a side opposite with organic El device 11B among the adjacent pixels 11B with respect to line LG, the end of the maintenance capacitor C S outside that is positioned at pixel 11G on described line LG and the pixel 11B contacts and extends along column direction.Transistor T among the pixel 11G
DrAnd T
WsPreferably be arranged on the side opposite with organic El device 11B among the adjacent pixels 11B with respect to the maintenance capacitor C S of pixel 11R.That is the transistor T among the pixel 11G,
DrAnd T
WsPreferably be arranged in the organic El device 11B zone farthest in the adjacent pixels 11B of pixel 11G outside.
For example, as shown in Figure 5, pixel 11B has the layout identical with the layout of pixel 11G.Transistor T among the pixel 11B
DrAnd T
WsBe set to than the maintenance capacitor C among the pixel 11B
s Organic El device 11G in the neighbor 11G more close to.Pixel 11B can have the layout different with the layout of pixel 11G.
3. cross-sectional configuration
Fig. 6 illustrates the cross-sectional configuration of cutting open along the line A-A of Fig. 3.Fig. 6 comprises transistor T
WsCross section.Fig. 7 illustrates the cross-sectional configuration of cutting open along the line B-B of Fig. 3.Fig. 7 comprises transistor T
DrCross section.In this embodiment, the cross-sectional configuration that obtains by the cross-sectional configuration minute surface symmetry that makes Fig. 6 is for example corresponding with the cross-sectional configuration that line A-A along Fig. 4 cuts open, and the cross-sectional configuration that obtains by the cross-sectional configuration minute surface symmetry that makes Fig. 7 is for example corresponding with the cross-sectional configuration that line B-B along Fig. 4 cuts open.
In the part corresponding with the line A-A of Fig. 3 and line B-B, pixel 11R, 11G and 11B have gate insulating film 41, insulating protective film 42 and the insulation planar film 43 that is positioned on the substrate 40.Gate insulating film 41 is as transistor T
WsAnd T
DrGate insulating film.Insulating protective film 42 is intended to cover and protective transistor T
WsAnd T
DrInsulation planar film 43 is set to the matrix of smooth organic El device 12, and covers the whole surface of insulating protective film 42.
(comprise transistor T in the part corresponding with the line A-A of Fig. 3
WsThe part of cross section) in, grid 31A and terminal 33A are formed between substrate 40 and the gate insulating film 41.Simultaneously, (comprise transistor T in the part corresponding with the line A-A of Fig. 4
DrThe part of cross section) in, grid 32A is formed between substrate 40 and the gate insulating film 41 haply.Grid 31A forms around the zone relative with the EL aperture 44A that describes after a while.Terminal 33A is formed in the zone relative with EL aperture 44A haply with grid 32A.Gate insulating film 41 covers the whole surface that comprises substrate 40, grid 31A and 32A and terminal 33A.
In between gate insulating film 41 and the insulating protective film 42 and position directly over the grid 31A, be formed with raceway groove 51, source electrode 52 and 31B, drain electrode 53 and 31C, lead-in wire 36B and diaphragm 54.Raceway groove 51 forms with gate insulating film 41 directly over the grid 31A and contacts.Source electrode 52 contacts with the end of raceway groove 51.Source electrode 31B contacts with source electrode 52.Source electrode 53 contacts with the other end of raceway groove 51.Drain electrode 31C contacts with drain electrode 53.Raceway groove 51, source electrode 52 and drain and 53 for example comprise amorphous silicon (a-Si), microcrystal silicon (μ-Si) or low temperature polycrystalline silicon.Diaphragm 54 is formed between source electrode 52,31B and drain electrode 53, the 31C, and cover raceway groove 51 outsides not with source electrode 52 and 53 zones that contact that drain.
In between gate insulating film 41 and the insulating protective film 42 and position directly over the grid 32A, be formed with raceway groove 55, source electrode 56 and 32B, drain electrode 57 and 324C and diaphragm 58.In addition, between gate insulating film 41 and insulating protective film 42 and the position relative with drain electrode 32C one side, form lead-in wire 36B.Raceway groove 55 forms with gate insulating film 41 directly over the grid 32A and contacts.Source electrode 56 contacts with the end of raceway groove 55.Source electrode 32B contacts with source electrode 56.Source electrode 57 contacts with the other end of raceway groove 55.Drain electrode 32C contacts with drain electrode 57.Raceway groove 55, source electrode 56 and drain and 57 for example comprise amorphous silicon (a-Si), microcrystal silicon (μ-Si) or low temperature polycrystalline silicon.Diaphragm 58 is formed between source electrode 56,32B and drain electrode 57, the 32C, and cover raceway groove 55 outsides not with source electrode 56 and 57 zones that contact that drain.
The aperture judges that dielectric film 44 has the aperture corresponding with anode 35A (EL aperture 44A).EL aperture 44A partly is formed in the zone opposite with the upper surface of anode 35A.The aperture judges that dielectric film 44 covers the outer rim (neighboring) of anode 35A.That is, on the bottom surface of EL aperture 44A, only part exposes the upper surface of anode 35A.Expose portion on the bottom surface of organic layer 35C and the EL aperture 44A of the upper surface outside of anode 35A contacts.
The whole surface of insulating protective film 45 covered cathode 35B.Insulating protective film 45 is formed by the material to the optical transparency of emission in the organic El device 12.Therefore, the emission light that insulating protective film 45 not only can be by organic El device 12 and also can by with the exterior light of the identical wavelength of emission light of organic El device 12.
With the coplanar plane of anode 35A in, be formed with around the auxiliary distribution 46 of the negative electrode of anode 35A around anode 35A.The auxiliary distribution 46 of negative electrode is configured such that the face built-in potential of negative electrode 35B is evenly distributed, and is electrically connected to negative electrode 35B.The auxiliary distribution 46 of negative electrode is arranged so that between the auxiliary distribution 46 of negative electrode and the anode 35A to have given gap, and aperture 46A is between the auxiliary distribution 46 of negative electrode and anode 35A.Thereby the auxiliary distribution 46 of negative electrode keeps insulation characterisitic with respect to anode 35A.
4. operate and effect
In the display unit 1 of this embodiment, image element circuit 13 is opened/closing control in each pixel 11R, 11G and 11B, and drive current is placed into the organic El device 12 of each pixel 11R, 11G and 11B.Therefore, electronics-hole takes place again in conjunction with launching with beginning light.Light reflects between anode 35A and negative electrode 35B with various modes, and transmission crosses negative electrode 35B, is extracted to the outside then.As a result, in display part 10, show image.
Usually, in organic EL display unit, for example shown in Fig. 6,7 and 18, a part of light L in the light that produces in organic layer 35C (127C) does not export from negative electrode 35B (127B) side, but leaks in the adjacent pixels.For example, as shown in figure 19, leaking the transistor T that light L enters neighbor
DrAnd T
WsUnder the situation in (particularly raceway groove 131), cause image element circuit 122 misoperations, for example the leakage of light electric current increases.
Particularly, enter at the blue ray with short wavelength under the situation of raceway groove 131, the TFT characteristic changing, for example, the critical voltage of grid changes as time passes, causes the long-term reliability of TFT to reduce.(under the situation of μ-Si), the long-term reliability of TFT seriously reduces to comprise amorphous silicon (a-Si) or microcrystal silicon at raceway groove 131.
For example, as shown in figure 19, be included in a pixel 120B in the pixel 120 and be arranged on and be included in the pixel 120G in the described pixel 120 and be included between the pixel 120R in another pixel 120 adjacent with described pixel 120.In the case, the blue light L that leaks from the organic layer 127C of pixel 120B enters the transistor T of pixel 120G
DrTransistor T with pixel 120R
WsIn, cause transistor T
DrAnd T
WsLong-term reliability reduce.
Simultaneously, in this embodiment, for example as shown in Figure 5, with the transistor T among the pixel 11B adjacent pixels 11R
DrAnd T
WsBe set to more farther from pixel 11B than the maintenance capacitor C S among the pixel 11R.In addition, with pixel 11B adjacent pixels 11G in transistor T
DrAnd T
WsBe set to more farther from pixel 11B than the maintenance capacitor C S among the pixel 11G.Thereby, the transistor T from pixel 11R
DrAnd T
WsThe distance A 1 of the organic El device 12 in the pixel 11B is big apart from B1 greater than the organic El device 12 of the maintenance capacitor C S from pixel 11R in the pixel 11B.In addition, the transistor T from pixel 11G
DrAnd T
WsThe distance A 2 of the organic El device 12 in the pixel 11B is big apart from B2 greater than the organic El device 12 of the maintenance capacitor C S from pixel 11G in the pixel 11B.Thereby, comparing less than the situation of distance B2 less than distance B1 and distance A 2 with distance A 1, the organic layer 35C from pixel 11B leaks into the pixel 11R that is adjacent and the transistor T among the 11G
DrAnd T
WsThe inlet of light L less.Thereby, even comprising amorphous silicon (a-Si) or microcrystal silicon, raceway groove 51 and 55 (under the situation of μ-Si), also can avoid the transistorized long-term reliability of TFT seriously to reduce.
Make transistor T can expecting
DrAnd T
WsUnder the situation of degradation, even transistor T
DrAnd T
WsCharacteristic changing, the voltage that is applied to organic El device 12 also can be set (correction) to desired value.Yet, enter transistor T at the blue light with short wavelength
DrAnd T
WsThereby raceway groove and transistor T
DrAnd T
WsCharacteristic when changing, be difficult to accurately to estimate this change.For example, as shown in Figure 8, if the emission blue light, transistor T
DrAnd T
WsThe Vds-Ids characteristic in the S value reduce gradually.Yet, be difficult to cause the change of S value.Thereby, consider because the degradation that blue light causes is not easy that the voltage that is applied to organic El device 12 is set (correction) and is desired value.
Yet, in this embodiment, as mentioned above, from the organic layer 35C of pixel 11B leak into this pixel 11B adjacent pixels 11R and 11G transistor T
DrAnd T
WsIn the inlet of light L less.Thereby, consider because the degradation that blue light causes needs to proofread and correct hardly.Thereby, can in long-time, keep high display quality.
5. modified example
In the aforementioned embodiment, pixel 11R, the 11G of the light that three kinds of colors of emission are set and the situation of 11B have been explained in a pixel 11.Yet, the pixel of launching other color light can also be provided.And, the pixel except pixel 11R and 11G can be provided in a pixel 11.In two kinds of situations in front, in another pixel adjacent with pixel 11B, transistor T
DrAnd T
WsPreferably be set to from pixel 11B as far as possible away from.
6. module and use example
The description of the application example of the display unit described in above-described embodiment and the modified example thereof will be given in.The display unit of the electronic installation that the display unit of above-described embodiment etc. can be applied to be shown as any field of image or video from vision signal or the inner vision signal that generates of outside input (such as, TV set device, digital camera, notebook personal computer, such as portable terminal and the video tape recorder of mobile phone).
Module
The display unit of above-described embodiment etc. is included in the various electronic installations as for example module described in Fig. 9, such as first to the 5th following application example.In module, for example, be arranged on substrate 2 one sides from the member (not shown) area exposed of sealing display part 10, and the external connection terminals (not shown) is formed in the exposed region 210 by timing control circuit 21, horizontal drive circuit 22, the extension distribution that writes scanning circuit 23 and power source scanning circuit 24.External connection terminals can be provided with the flexible print circuit (FPC) 220 for input and output signal.
First uses example
Figure 10 illustrates the outward appearance of TV set device of application of the display unit of above-described embodiment etc.TV set device for example has the video display screen part 300 that comprises front panel 310 and filter glass 320.Video display screen part 300 is made up of the display unit of above-described embodiment etc.
Second uses example
The outward appearance of the digital camera of the application of the display unit of Figure 11 A-11B diagram above-described embodiment etc.Digital camera for example has for the luminous component of photoflash lamp 410, display screen part 420, menu switch 430 and shutter release button 440.Display screen part 420 is made up of the display unit of above-described embodiment etc.
The 3rd uses example
Figure 12 illustrates the outward appearance of notebook personal computer of application of the display unit of above-described embodiment etc.Notebook personal computer for example has main body 510, be used for the keyboard 520 of operation such as input character and the display screen part 530 that is used for showing image.Display screen part 530 is made up of the display unit of above-described embodiment etc.
The 4th uses example
Figure 13 illustrates the outward appearance of video tape recorder of application of the display unit of above-described embodiment etc.Video tape recorder for example has main body 610, be arranged on the lens that are used for catching target 620 on the leading flank of main body 610, catch startup/shutdown switch 630 and display screen part 640.Display screen part 640 is made up of the display unit of above-described embodiment etc.
The 5th uses example
The outward appearance of the mobile phone of the application of the display unit of Figure 14 A-14G diagram above-described embodiment etc.In mobile phone, for example, last packaging part 710 is connected by coupling part (hinge fraction) 730 with following packaging part 720.Mobile phone has display screen 740, sub-display screen 750, picture lamp 760 and camera 770.Display screen 740 or sub-display screen 750 are made up of the display unit of above-described embodiment etc.
Though reference example, modified example and application example have been described the present invention, the invention is not restricted to above-described embodiment etc., and can make various modifications.
For example, in the above embodiments and the like, having provided display unit is the description of active array type.But, be used for driving the situation that the structure of the image element circuit 13 of active matrix is not limited to describe in the above embodiments and the like, capacitive means or transistor can be added in the image element circuit 13 as required.In the case, according to the variation of image element circuit 13, except above-mentioned horizontal drive circuit 22, write scanning circuit 23 and the power source scanning circuit 24, can add necessary drive circuit.
In addition, in the above embodiments and the like, horizontal drive circuit 22, the driving that writes scanning circuit 23 and power source scanning circuit 24 can be controlled by signal retentive control circuit 21B.But other circuit can be controlled horizontal drive circuit 22, write the driving of scanning circuit 23 and power source scanning circuit 24.In addition, horizontal drive circuit 22, write scanning circuit 23 and power source scanning circuit 24 and can control by firmware (circuit) control or by software (program).
In addition, in the above embodiments and the like, provided transistor T
WsSource electrode and drain electrode and transistor T
DrThe description of the fixing situation of drain electrode.But, need not many speeches, according to the flow direction of electric current, what the relativeness between source electrode and the drain electrode can be with above-mentioned explanation is opposite.
In addition, in the above embodiments and the like, provided transistor T
WsAnd T
DrThe description of situation about being formed by n channel MOS type TFT.But, at least one transistor T
WsAnd T
DrCan be formed by p channel MOS type TFT.At transistor T
DrUnder the situation about being formed by p channel MOS type TFT, the anode 35A of organic El device 12 becomes the negative electrode in above-described embodiment etc., and the negative electrode 35B of organic El device 12 becomes anode.And, in the above embodiments and the like, transistor T
WsAnd T
DrNeeding not be amorphous silicon type TFT or microcrystal silicon type TFT, still, for example can be low temperature polycrystalline silicon type TFT.
The application comprises Japan of submitting in Japan Patent office on March 13rd, 2009 relevant theme of the disclosed theme of patent application JP2009-061713 formerly, and the full content of this application is incorporated into this by reference.
It should be appreciated by those skilled in the art and to carry out various modifications, combination, sub-portfolio and replacement according to designing requirement and other factors, as long as they are in the scope or its equivalency range of claim.
Claims (6)
1. display unit comprises: the display part, and it has a plurality of organic El devices and a plurality of image element circuit that glow color differs from one another according to each pixel, and described image element circuit arranges one according to each described organic El device, wherein:
Described image element circuit has be used to the first transistor that writes vision signal, is used for driving the transistor seconds of described organic El device and keeping electric capacity based on the vision signal that described the first transistor writes, and
Described the first transistor and described transistor seconds comprise and the 3rd transistor in abutting connection with the corresponding setting of second organic El device of first organic El device, described the 3rd transistor is set to more farther from described first organic El device than the corresponding first maintenance electric capacity that arranges with described transistor seconds in the described maintenance electric capacity
Wherein, organic layer is formed by the layer that is positioned at described the first transistor and described transistor seconds top.
2. display unit as claimed in claim 1, wherein, described the 3rd transistor keeps electric capacity to be arranged on the side opposite with described first organic El device with respect to described first.
3. display unit as claimed in claim 1 or 2, wherein, described first organic El device has the organic layer that produces light, and described light can make described the first transistor and described transistor seconds degradation.
4. display unit as claimed in claim 3, wherein, described organic layer constitutes by comprising the material of launching blue light.
5. display unit as claimed in claim 3, wherein, described the 3rd transistor has and comprises amorphous silicon (a-Si) or the microcrystal silicon (raceway groove of μ-Si).
6. display unit as claimed in claim 1 wherein, is launched light and is launched into the top.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009061713A JP5392545B2 (en) | 2009-03-13 | 2009-03-13 | Display device |
| JP2009-061713 | 2009-03-13 | ||
| CN201010129080.2A CN101834199B (en) | 2009-03-13 | 2010-03-08 | Display unit |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201010129080.2A Division CN101834199B (en) | 2009-03-13 | 2010-03-08 | Display unit |
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| CN103208505B CN103208505B (en) | 2015-12-23 |
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| CN201310058952.4A Active CN103208505B (en) | 2009-03-13 | 2010-03-08 | Display unit |
| CN201510732460.8A Active CN105405863B (en) | 2009-03-13 | 2010-03-08 | Display unit |
| CN201510783312.9A Active CN105428388B (en) | 2009-03-13 | 2010-03-08 | Display unit |
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| CN201510783312.9A Active CN105428388B (en) | 2009-03-13 | 2010-03-08 | Display unit |
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| US (9) | US8610122B2 (en) |
| EP (1) | EP2228827A3 (en) |
| JP (1) | JP5392545B2 (en) |
| KR (1) | KR101523789B1 (en) |
| CN (4) | CN101834199B (en) |
| TW (1) | TWI444970B (en) |
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| WO2018225183A1 (en) * | 2017-06-07 | 2018-12-13 | シャープ株式会社 | Display device, method for manufacturing display device, and apparatus for manufacturing display device |
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