CN103207543A - Developing method - Google Patents
Developing method Download PDFInfo
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- CN103207543A CN103207543A CN2013101372153A CN201310137215A CN103207543A CN 103207543 A CN103207543 A CN 103207543A CN 2013101372153 A CN2013101372153 A CN 2013101372153A CN 201310137215 A CN201310137215 A CN 201310137215A CN 103207543 A CN103207543 A CN 103207543A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
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- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
The invention provides a developing method which comprises the following steps of: inclining a substrate relative to a developing machine table, wherein a first side edge of the substrate is upward, and a second side edge, which is opposite to the first side edge, of the substrate is downward; and an inclination angle between the substrate and the developing machine table is theta1 which is more than 0 degree and less than 90 degrees; uniformly spraying a developing solution to the substrate through a nozzle arranged above the substrate, wherein the developing time is t1; then inclining the substrate relative to the developing machine table, wherein the second side edge of the substrate is upward, and the first side edge of the substrate is downward; and an inclination angle between the substrate and the developing machine table is theta2 which is more than 0 degree and less than 90 degrees; uniformly spraying a developing solution to the substrate through the nozzle arranged above the substrate, wherein the developing time is t2. By the developing method, the uniformity of a linear width of a photoetched graph obtained by development can be improved.
Description
Technical field
The present invention relates to the developing technique field, particularly a kind of developing method, this developing method can improve the live width homogeneity of litho pattern.
Background technology
In TFT-LCD (Thin Film Transistor (TFT) LCD) production run, the photoresist that is coated on the glass substrate needs to develop and just can obtain the litho pattern of needs after exposure.
As shown in Figure 1, in the prior art, be applied to a kind of developing method that advanced lines produces line, glass substrate 2 moves with the developing machine platform 1 of inclination angle theta along horizontal positioned, inclination angle theta between glass substrate 2 and the developing machine platform 1 remains unchanged, linearly a plurality of nozzles 3 of shape arrangement are fixed on the plate shaped injection nozzle carrier 4, and injection nozzle carrier 4 is arranged at the top of glass substrate 2, and injection nozzle carrier 4 is parallel with glass substrate 2.In the developing process, developer solution is sprayed onto on the glass substrate 2 by nozzle 3, the upper side edge that wherein is sprayed onto glass substrate 2 is that concentration reduces behind the developer solution of a side and the photoresist generation chemical reaction, and the developer solution that concentration reduces is that the b side flows to the lower side of glass substrate 2, make that the developer solution of the b side directly be sprayed onto glass substrate 2 is diluted, thereby cause reducing with the solution level of the photoresist generation chemical reaction of the b side of glass substrate 2.Be example with the negative photoresist, the photoresist that is exposed is retained after development down, and all the other photoresists that are not exposed are removed.As shown in Figure 2, adopt the live width of litho pattern of this kind developing method preparation inhomogeneous, to its b side, the live width of litho pattern broadens gradually by a side of glass substrate 2.
As shown in Figure 3, in the prior art, another kind of developing method is that glass substrate 2 is placed horizontally on the circular developing machine platform 1, and injection nozzle carrier 4 is arranged at the top of glass substrate 2, and injection nozzle carrier 4 is parallel with glass substrate 2.In the developing process, developer solution is sprayed onto on the glass substrate 2 by nozzle 3, and developing machine platform 1 rotation simultaneously with it is with the uniform litho pattern of preparation live width.This kind developing method is only applicable to undersized glass substrate.The glass substrate size that advanced lines produces line is big especially, and developing machine platform 1 rotation is easy to cause glass substrate cracked, so this kind developing method is not suitable for advanced lines product line.
Produce in the production of line at advanced lines, than higher rete, for example each tunic of the BM of color film, TFT need be sought the better developing method of live width homogeneity for some live width uniformity requirement.
Summary of the invention
The purpose of this invention is to provide a kind of developing method.
Developing method provided by the invention comprises the steps:
Substrate is obliquely installed with respect to developing machine platform, and the first side of described substrate makes progress, and its second side relative with the position, first side is downward, and the inclination angle between described substrate and the described developing machine platform is θ
1, 0＜θ
1＜90 °, by the nozzle that is arranged at described substrate top developer solution is sprayed onto on the described substrate equably, the development time of this step is t
1
Described substrate is obliquely installed with respect to described developing machine platform, and the second side of described substrate makes progress, and its first side is downward, and the inclination angle between described substrate and the described developing machine platform is θ
2, 0＜θ
2＜90 °, by the described nozzle that is arranged at described substrate top developer solution is sprayed onto on the described substrate equably, the development time of this step is t
2
Preferably, described developing method also comprises the steps: to replace repeating said steps, and " substrate is obliquely installed with respect to developing machine platform; the first side of described substrate makes progress, and its second side relative with the position, first side is downward, and the inclination angle between described substrate and the described developing machine platform is θ
1, 0＜θ
1＜90 °, by the nozzle that is arranged at described substrate top developer solution is sprayed onto on the described substrate equably, the development time of this step is t
1" and described step " described substrate is obliquely installed with respect to described developing machine platform, the second side of described substrate upwards, its first side is downward, and the inclination angle between described substrate and the described developing machine platform is θ
2, 0＜θ
2＜90 °, by the described nozzle that is arranged at described substrate top developer solution is sprayed onto on the described substrate equably, the development time of this step is t
2".
Preferably, a plurality of described nozzles are fixed on the injection nozzle carrier, and described injection nozzle carrier is arranged at the top of described substrate.
Preferably, linearly shape is evenly distributed for a plurality of described nozzles.
Preferably, described injection nozzle carrier is plate shaped, and described injection nozzle carrier is parallel with described substrate.
Preferably, described development time t
1Equal described development time t
2
Preferably, the inclination angle theta between described substrate and the described developing machine platform
1=θ
2
More preferably, the inclination angle theta between described substrate and the described developing machine platform
1And θ
2Numerical range be 5-10 °.
The present invention has following beneficial effect:
Adopt described developing method, because the two ends of substrate alternately upwards, the developer solution of nozzle ejection alternately flows to the other end by an end of substrate, the degree that is sprayed onto the developer solution at substrate two ends and photoresist generation chemical reaction is basic identical, namely can improve the homogeneity of developer solution and photoresist generation chemical reaction, thereby improve the live width homogeneity of the litho pattern of acquisition afterwards of developing.In addition, described method does not need the developing machine platform rotation, can not cause the cracked of substrate, is applicable to that advanced lines produces line.
Description of drawings
Fig. 1 is the synoptic diagram of first kind of developing method of prior art;
Fig. 2 is the live width synoptic diagram of the litho pattern of first kind of developing method preparation of employing prior art;
Fig. 3 is the synoptic diagram of second kind of developing method of prior art;
The process flow diagram of the developing method that Fig. 4 provides for embodiments of the invention;
The synoptic diagram of the developing method that Fig. 5 (a) and Fig. 5 (b) provide for embodiments of the invention;
The live width synoptic diagram of the litho pattern that the developing method that Fig. 6 provides for the employing embodiment of the invention prepares.
Embodiment
Below in conjunction with drawings and Examples summary of the invention of the present invention is described in further detail.
As shown in Figure 4, the developing method that provides of present embodiment comprises the steps:
S1: shown in Fig. 5 (a), substrate 2 is obliquely installed with respect to developing machine platform 1, the first side of substrate 2 for example c side makes progress, for example the d side is downward in its second side, the first side of substrate 2 is relative with the position of second side, the c side that is substrate 2 is relative with the position of d side, and the inclination angle between substrate 2 and the developing machine platform 1 is θ
1, 0＜θ
1＜90 °, by the nozzle 3 that is arranged at substrate 2 tops developer solution is sprayed onto on the substrate 2 equably.The development time of this step is t
1Preferably, in this step, linearly a plurality of nozzles 3 that shape is evenly distributed are fixed on the plate shaped injection nozzle carrier 4, and injection nozzle carrier 4 is arranged at the top of substrate 2, and injection nozzle carrier 4 is parallel with substrate 2.
S2: shown in Fig. 5 (b), substrate 2 is obliquely installed with respect to developing machine platform 1, and the second side of substrate 2 is that the d side makes progress, and its first side is that the c side is downward, and the inclination angle between substrate 2 and the developing machine platform 1 is θ
2, 0＜θ
2＜90 °, by the nozzle 3 that is arranged at substrate 2 tops developer solution is sprayed onto on the substrate 2 equably.The development time of this step is t
2Preferably, in this step, linearly a plurality of nozzles 3 of shape arrangement are fixed on the plate shaped injection nozzle carrier 4, and injection nozzle carrier 4 is arranged at the top of substrate 2, and injection nozzle carrier 4 is parallel with substrate 2.
S3: replace repeating step S1 and step S2, up to obtaining the uniform litho pattern of live width.
Preferably, substrate 2 is glass substrate.Preferably, step S1 equates with the development time of step S2, i.e. t
1=t
2Preferably, the substrate 2 of step S1 and step S2 equates with inclination angle between the developing machine platform 1, i.e. θ
1=θ
2More preferably, the inclination angle theta between substrate 2 and the developing machine platform 1
1And θ
2Numerical range be 5-10 °.
Be example with the negative photoresist, the photoresist that is exposed is retained after development down, the dissolved removal of all the other photoresists that are not exposed.As shown in Figure 6, adopt the live width of litho pattern of described kind of developing method preparation even, namely the c by substrate 2 holds its d end, and the live width of litho pattern is basic identical.
Adopt the described developing method of present embodiment, because the two ends of substrate alternately upwards, the developer solution of nozzle ejection alternately flows to the other end by an end of substrate, the degree that is sprayed onto the developer solution at substrate two ends and photoresist generation chemical reaction is basic identical, namely can improve the homogeneity of developer solution and photoresist generation chemical reaction, thereby improve the live width homogeneity of the litho pattern of acquisition afterwards of developing.In addition, described method does not need the developing machine platform rotation, can not cause the cracked of substrate, is applicable to that advanced lines produces line.
Above embodiment only is used for explanation the present invention; and be not limitation of the present invention; the those of ordinary skill in relevant technologies field; under the situation that does not break away from the spirit and scope of the present invention; can also make a variety of changes and modification; therefore all technical schemes that are equal to also belong to category of the present invention, and scope of patent protection of the present invention should be defined by the claims.
Claims (8)
1. a developing method is characterized in that, this developing method comprises the steps:
Substrate is obliquely installed with respect to developing machine platform, and the first side of described substrate makes progress, and its second side relative with the position, first side is downward, and the inclination angle between described substrate and the described developing machine platform is θ
1, 0＜θ
1＜90 °, by the nozzle that is arranged at described substrate top developer solution is sprayed onto on the described substrate equably, the development time of this step is t
1
Described substrate is obliquely installed with respect to described developing machine platform, and the second side of described substrate makes progress, and its first side is downward, and the inclination angle between described substrate and the described developing machine platform is θ
2, 0＜θ
2＜90 °, by the described nozzle that is arranged at described substrate top developer solution is sprayed onto on the described substrate equably, the development time of this step is t
2
2. developing method as claimed in claim 1, it is characterized in that, described developing method also comprises the steps: to replace repeating said steps, and " substrate is obliquely installed with respect to developing machine platform; the first side of described substrate upwards; its second side relative with the position, first side is downward, and the inclination angle between described substrate and the described developing machine platform is θ
1, 0＜θ
1＜90 °, by the nozzle that is arranged at described substrate top developer solution is sprayed onto on the described substrate equably, the development time of this step is t
1" and described step " described substrate is obliquely installed with respect to described developing machine platform, the second side of described substrate upwards, its first side is downward, and the inclination angle between described substrate and the described developing machine platform is θ
2, 0＜θ
2＜90 °, by the described nozzle that is arranged at described substrate top developer solution is sprayed onto on the described substrate equably, the development time of this step is t
2".
3. developing method as claimed in claim 1 is characterized in that, a plurality of described nozzles are fixed on the injection nozzle carrier, and described injection nozzle carrier is arranged at the top of described substrate.
4. developing method as claimed in claim 3 is characterized in that, linearly shape is evenly distributed for a plurality of described nozzles.
5. developing method as claimed in claim 3 is characterized in that, described injection nozzle carrier is plate shaped, and described injection nozzle carrier is parallel with described substrate.
6. as each described developing method among the claim 1-5, it is characterized in that described development time t
1Equal described development time t
2
7. as each described developing method among the claim 1-5, it is characterized in that the inclination angle theta between described substrate and the described developing machine platform
1=θ
2
8. developing method as claimed in claim 7 is characterized in that, the inclination angle theta between described substrate and the described developing machine platform
1And θ
2Numerical range be 5-10 °.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013101372153A CN103207543A (en) | 2013-04-19 | 2013-04-19 | Developing method |
| PCT/CN2013/086443 WO2014169614A1 (en) | 2013-04-19 | 2013-11-01 | Developing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013101372153A CN103207543A (en) | 2013-04-19 | 2013-04-19 | Developing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103207543A true CN103207543A (en) | 2013-07-17 |
Family
ID=48754810
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2013101372153A Pending CN103207543A (en) | 2013-04-19 | 2013-04-19 | Developing method |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN103207543A (en) |
| WO (1) | WO2014169614A1 (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104062857A (en) * | 2014-06-11 | 2014-09-24 | 京东方科技集团股份有限公司 | Developing method and developing device |
| WO2014169614A1 (en) * | 2013-04-19 | 2014-10-23 | 京东方科技集团股份有限公司 | Developing method |
| WO2014205889A1 (en) * | 2013-06-25 | 2014-12-31 | 京东方科技集团股份有限公司 | Developing device and developing method |
| CN104785401A (en) * | 2015-05-13 | 2015-07-22 | 合肥京东方光电科技有限公司 | Spraying device and spraying method |
| CN104849968A (en) * | 2015-05-28 | 2015-08-19 | 合肥京东方光电科技有限公司 | Developer and developing method thereof |
| CN105607434A (en) * | 2016-04-05 | 2016-05-25 | 京东方科技集团股份有限公司 | Developing apparatus and developing method |
| CN107065452A (en) * | 2017-06-12 | 2017-08-18 | 京东方科技集团股份有限公司 | Developing apparatus and developing method |
| CN107179654A (en) * | 2016-03-11 | 2017-09-19 | 上海和辉光电有限公司 | Developing method, oled panel and the manufacturing equipment of oled panel |
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| CN1207576A (en) * | 1997-07-31 | 1999-02-10 | 日本电气株式会社 | Resist developing process |
| CN1722361A (en) * | 2004-06-25 | 2006-01-18 | Hoya株式会社 | Substrate processing device and method, and pattern forming method |
| CN1992158A (en) * | 2005-12-28 | 2007-07-04 | 大日本网目版制造株式会社 | Base plate processing device |
| CN101295089A (en) * | 2007-04-27 | 2008-10-29 | 芝浦机械电子株式会社 | Substrate processing apparatus |
| CN201429770Y (en) * | 2009-07-15 | 2010-03-24 | 北京京东方光电科技有限公司 | Developing solution dumping equipment |
| CN201828770U (en) * | 2010-10-13 | 2011-05-11 | 京东方科技集团股份有限公司 | Developing device |
| CN102789141A (en) * | 2012-08-13 | 2012-11-21 | 深圳市华星光电技术有限公司 | Color film developing machine |
| CN202712144U (en) * | 2012-07-27 | 2013-01-30 | 京东方科技集团股份有限公司 | Substrate conveying apparatus and developing machine |
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|---|---|---|---|---|
| JP2009008886A (en) * | 2007-06-28 | 2009-01-15 | Toppan Printing Co Ltd | Developing method and developing device |
| CN103207543A (en) * | 2013-04-19 | 2013-07-17 | 京东方科技集团股份有限公司 | Developing method |
| CN103324038A (en) * | 2013-06-25 | 2013-09-25 | 京东方科技集团股份有限公司 | Developing device and developing method |
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2013
- 2013-04-19 CN CN2013101372153A patent/CN103207543A/en active Pending
- 2013-11-01 WO PCT/CN2013/086443 patent/WO2014169614A1/en active Application Filing
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1207576A (en) * | 1997-07-31 | 1999-02-10 | 日本电气株式会社 | Resist developing process |
| CN1722361A (en) * | 2004-06-25 | 2006-01-18 | Hoya株式会社 | Substrate processing device and method, and pattern forming method |
| CN1992158A (en) * | 2005-12-28 | 2007-07-04 | 大日本网目版制造株式会社 | Base plate processing device |
| CN101295089A (en) * | 2007-04-27 | 2008-10-29 | 芝浦机械电子株式会社 | Substrate processing apparatus |
| CN201429770Y (en) * | 2009-07-15 | 2010-03-24 | 北京京东方光电科技有限公司 | Developing solution dumping equipment |
| CN201828770U (en) * | 2010-10-13 | 2011-05-11 | 京东方科技集团股份有限公司 | Developing device |
| CN202712144U (en) * | 2012-07-27 | 2013-01-30 | 京东方科技集团股份有限公司 | Substrate conveying apparatus and developing machine |
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014169614A1 (en) * | 2013-04-19 | 2014-10-23 | 京东方科技集团股份有限公司 | Developing method |
| WO2014205889A1 (en) * | 2013-06-25 | 2014-12-31 | 京东方科技集团股份有限公司 | Developing device and developing method |
| US9581939B2 (en) | 2013-06-25 | 2017-02-28 | Boe Technology Group Co., Ltd. | Developing device and developing method |
| CN104062857A (en) * | 2014-06-11 | 2014-09-24 | 京东方科技集团股份有限公司 | Developing method and developing device |
| CN104785401A (en) * | 2015-05-13 | 2015-07-22 | 合肥京东方光电科技有限公司 | Spraying device and spraying method |
| CN104849968A (en) * | 2015-05-28 | 2015-08-19 | 合肥京东方光电科技有限公司 | Developer and developing method thereof |
| CN104849968B (en) * | 2015-05-28 | 2019-12-31 | 合肥京东方光电科技有限公司 | Developing machine and developing method |
| CN107179654A (en) * | 2016-03-11 | 2017-09-19 | 上海和辉光电有限公司 | Developing method, oled panel and the manufacturing equipment of oled panel |
| CN107179654B (en) * | 2016-03-11 | 2020-12-01 | 上海和辉光电股份有限公司 | Developing method of OLED panel, OLED panel and manufacturing equipment |
| CN105607434A (en) * | 2016-04-05 | 2016-05-25 | 京东方科技集团股份有限公司 | Developing apparatus and developing method |
| CN107065452A (en) * | 2017-06-12 | 2017-08-18 | 京东方科技集团股份有限公司 | Developing apparatus and developing method |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2014169614A1 (en) | 2014-10-23 |
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Application publication date: 20130717 |