CN103205679A - Vapor plating method for organic light-emitting diode - Google Patents
Vapor plating method for organic light-emitting diode Download PDFInfo
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- CN103205679A CN103205679A CN2012100106929A CN201210010692A CN103205679A CN 103205679 A CN103205679 A CN 103205679A CN 2012100106929 A CN2012100106929 A CN 2012100106929A CN 201210010692 A CN201210010692 A CN 201210010692A CN 103205679 A CN103205679 A CN 103205679A
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Abstract
The invention relates to a vapor plating method for an organic light-emitting diode (OLED), and aims to mainly solve the technical problem that organic particles cannot reach a substrate due to shadowing of a mask plate aperture wall during vapor plating in the existing OLED manufacturing technologies. The invention employs a diode vapor plating method, which includes the steps of: combining the ITO (indium tin oxide) surface of a mask plate with an ITO semiconductor glass surface, making the vapor plating surface of the mask plate correspond to an organic vapor plating source; vaporizing an organic material, and making the organic material attached to the ITO semiconductor glass surface through through-holes on the mask plate; and separating the mask plate and the ITO semiconductor glass, thus completing vapor plating. Specifically, by adopting the technical scheme that the aperture size of the through-holes on the ITO surface is smaller than that on the vapor plating surface, the problem is well solved. Thus, the method provided in the invention can be used in the industrial production of organic light-emitting diodes.
Description
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Technical field
The present invention relates to a kind of evaporation coating method of organic electroluminescent LED.
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Background technology
Usually, the OLED device is a kind of emissive display, and it is luminous by electric fluorescence excitation organic compound.According to the type of drive that can be arranged as the N * M pixel of matrix, the OLED device can be regarded passive matrix OLED (PMOLED) device or active matrix OLED(AMOLED as) device.The AMOLED device is compared with the PMOLED device, because its reduce power consumption and high resolving power are suitable for large-sized monitor.
According to the direction that light sends from organic compound, the OLED device can be top emission OLED device, end emission OLED device or T﹠B emission OLED device.Top emission OLED device with the reverse direction of the substrate that is provided with pixel on luminous and different with end emission OLED, it has high aperture (Aperture ratio).
This device increases for not only comprising for the top emission type of main display window but also the demand that comprises for the end emitting OLED device of less important window, because can be miniaturized and it consumes seldom power.Such OLED device can be mainly used in comprising the mobile telephone of external secondary display window and inner main display window.The power of less important display window consumption is less than main display window, and the state that it can keep out when mobile telephone is in the call waiting state, thereby allows at any time to observe accepting state, battery allowance, time etc.
Organic electroluminescent LED (Organic Light-Emitting Diode, OLED) be under certain electric field driven, electronics and hole are injected into cathodic modification layer and hole injection layer from negative electrode and anode respectively, and meet in luminescent layer, and the exciton of formation finally causes the emission of visible light.For organic electroluminescence device, we can be divided into two kinds by luminescent material: small molecules OLED and polymer OLED.
Above-mentioned Organnic electroluminescent device comprises first electrode, organic luminous layer and second electrode.When making organic light-emitting device, by photolithography, by etching reagent composition on ITO.When photolithography was used for preparing second electrode again, moisture infiltrated between organic luminous layer and second electrode, can shorten the life-span of organic light-emitting device significantly, reduced its performance.In order to overcome above problem, adopt evaporation process that luminous organic material is deposited on the substrate, form organic luminous layer, this method needs supporting high precision evaporation with (being also referred to as shadow mask).The making of second electrode is with the making method of luminescent layer.
In evaporate process, prolongation along with the time, temperature is also in continuous rising, high temperature can reach 60 ℃, because the shadow mask opening size is weighed with micron order, and need the very thin thickness of the organic materials of evaporation to the ito glass, weigh with nano level unit, so need be strict with opening dimensional precision, opening pattern and thickness of slab.Because the evaporation that traditional technology is used is generally individual layer with the opening of shadow mask, the opening on the shadow mask does not have the tool zero draft yet, so can cause blocking of organic materials particle, influences the homogeneity of evaporation layer, and the reduction evaporating quality has increased manufacturing cost.
Traditional technology adopts the OLED mask plate of individual layer opening; and opening zero draft; as shown in Figure 1; the organic materials particle passes mask plate and is attached on the substrate from all angles; opening 1 zero draft; when particle tilts to inject angle when being less than or equal to θ, this part particle can be run into perforated wall and crested can't arrive substrate.This phenomenon can produce following problem: make the particle that tilts to inject excalation occur, cause briliancy to descend, and can not form thickness and the shape of hope on substrate.
General evaporation uses the thickness of shadow mask about 100 μ m, and the organic materials thickness of evaporation is only about 100nm, opening size minimum on the shadow mask can be 10 μ m, blocks so the sidewall of zero draft opening will certainly produce in evaporate process, but then, if only the thickness of attenuate shadow mask reduces the coverage extent of organic materials, can influence the work-ing life of shadow mask again, because shadow mask is thin excessively, yielding, the use of the shadow mask of influence reduces evaporating quality.
Traditional evaporation has three kinds with the opening kind of mask plate: point-like shadow mask board (Invar-Shadow Mask), grid type/slotted mask plate (Aperture Grille Mask/Slit Mask), slit shadow mask board (Slot Mask).All has the open defect as Fig. 1 opening 11 described single face zero drafts.
The invention provides required evaporation coating method in a kind of OLED manufacturing processed, the mask plate that this method adopts has the design of tapering opening, be the ito surface opening size less than evaporation face opening size, solved organic granular because covering of perforated wall and can't reach the problem of substrate.
Summary of the invention
Technical problem to be solved by this invention is in the existing OLED manufacturing technology, organic granular can't reach the technical problem of substrate during evaporation owing to covering of perforated wall, a kind of new evaporation coating method is provided, and this method has the rate of utilization height, yield polymer films height, mask plate long service life of organic materials, the advantage of saving cost.
For solving the problems of the technologies described above, the technical solution used in the present invention is as follows: a kind of evaporation coating method of organic electroluminescent LED comprises following several steps:
The ito surface of mask plate and the combination of ITO semiconducting glass face, the corresponding organic vapor deposition source of the evaporation face of mask plate;
The evaporation organic materials, make organic materials by the through hole on the mask plate, be attached to ITO semiconducting glass face on;
Separate masks plate and ITO semiconducting glass are finished evaporation;
Wherein, the evaporation mask plate, be shaped as the tetragon metal sheet, comprise ito surface and two faces of evaporation face of contacting with indium tin oxide (ITO), has the through hole that connects ito surface and evaporation face on the described mask plate, less than the opening size on the evaporation face, the via openings of ito surface and evaporation face all has reversed cone angle to through hole at the opening size on the ito surface.
In the technique scheme, the via openings on described ito surface and the evaporation face couples together opening by several real bridges, and through hole is the rule mesh trellis at mask plate and distributes; Described mask plate is rectangle, and thickness is 5～200 μ m.The via openings of ito surface and evaporation face all has reversed cone angle, and the angle of the via openings reversed cone angle of ito surface is less than the angle of the via openings reversed cone angle of evaporation face.The mask plate material is any one metal sheet in stainless steel, pure nickel, nickel cobalt (alloy), Rhometal, the Invar alloy.Mask plate thickness is 10～50 μ m; It is vertically cut open on the thickness direction of mask plate, and its sectional view is the cucurbit shape.The direction on the long size of the opening on ito surface and evaporation face limit is that vertically the direction of opening undersized edge is horizontal; Ito surface opening lateral dimension is less than the lateral dimension of evaporation veil lattice opening.Ito surface via openings dimensional precision transversely is at ± 5 μ m; The vertical depth of the reversed cone angle opening of ito surface is at 5～25 μ m.The latticed opening sidewalls of evaporation face large size is smooth awl wall, and tapering is at 30～50 °.The vertical depth of the reversed cone angle opening of ito surface is smaller or equal to the vertical depth of evaporation face cone angle opening; When described mask plate used, ito surface and evaporation substrate ito glass closely were adjacent to, and organic materials passes through ito surface via openings evaporation to ito glass substrate.
The present invention is as follows by this beneficial effect of the invention: this kind shadow mask has tapering opening design, and namely the ito surface opening size is less than evaporation face opening size, has solved organic granular because covering of perforated wall and can't reach the problem of substrate; When guaranteeing ito surface aperture position precision, improved the yield polymer films of organic materials; Improve the rate of utilization of organic materials, saved cost.Improved the uniformity coefficient of evaporated film; The design of opening Pear-Shaped has guaranteed that mask plate and ito glass substrate be close to the opening size precision control of face (being ito surface) in claimed range; Mask plate has the certain thickness evaporation face of big opening design, guarantees under the situation that does not influence evaporation, and mask plate has been carried out thickening firm effect; Enlarge the thickness range of shadow mask, avoided because the thin excessively plate facial disfigurement that causes of shadow mask, improved shadow mask work-ing life, obtained better technical effect.
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Description of drawings
Fig. 1 is mask plate structure synoptic diagram in the prior art.
Fig. 2 is mask plate structure synoptic diagram in the embodiment of the invention 1.
Fig. 3 is that mask plate and ito glass substrate cooperate synoptic diagram.
Fig. 4 is mask plate evaporation face vertical view.
Fig. 5 is the evaporate process synoptic diagram.
Among Fig. 1,1 is mask plate zero draft opening, and 2 is ito glass, and 3 is the single layer mask plate, and 4 is ito surface, and 5 is the evaporation face.
Among Fig. 2,1 is the ito surface small orifices, and 2 is evaporation face large size opening, and 3 is the single layer mask plate, and 4 is ito surface, and 5 is the evaporation face.
Among Fig. 3,1 is the ito surface small orifices, and 2 is evaporation face large size opening, and 3 is mask plate, and 4 is ito surface, and 5 is the evaporation face.
Among Fig. 4,1 is the ito surface small orifices, and 2 is evaporation face large size opening, and 3 is mask plate, and 4 is ito surface, and 5 is the evaporation face.
Among Fig. 5,1 is the zero draft opening, and 2 is ito glass, and 3 is the single layer mask plate, and 4 is ito surface, and 5 is the evaporation face, and 11 is the organic vapor deposition material, and 22 is evaporation source.
The present invention is further elaborated below by embodiment.
Embodiment
[embodiment 1]
A kind of evaporation mask plate, as shown in Figure 2, thick is 50 μ m, be shaped as the tetragon metal sheet, comprise the ito surface 4 and the evaporation face 5 that contact with indium tin oxide (ITO), have the through hole that connects ito surface and evaporation face on the described mask plate, through hole is in the size of the opening 1 on the ito surface size less than the opening 2 on the evaporation face.Choosing Invar alloy is the mask plate material, adopts two-sided etch process, and Fig. 3 is that mask plate and ito surface cooperate synoptic diagram.
Form ito surface opening 1 as mask plate Fig. 2 from ito surface 4 etchings of mask plate, opening 1 degree of depth is 15 μ m, lateral dimension is 70 μ m, form as the opening 2 on the evaporation face Fig. 2 from evaporation face 5 etchings of mask plate, and guarantee that the opening 2 on the evaporation face overlaps with ito surface opening 1 center of template, and 2 centrosymmetry of the opening on the evaporation face, the degree of depth is 35 μ m, lateral dimension is 140 μ m, and the opening hole wall of the opening on the evaporation face 2 has certain concave arc degree, has formed as 50 ° of the deposition angles among Fig. 3.By the separately control to ito surface and evaporation facet etch time, obtain on needed ito surface opening 1 and the evaporation face opening 2 the opening degree of depth.As shown in Figure 4, real bridge 3 links together opening; The opening sectional view that makes by above-mentioned etch process as shown in Figure 3, the wide evaporation face large size opening 2 of the dark 140 μ m of the ito surface small orifices 1 that the dark 70 μ m of 15 μ m are wide and 35 μ m connects and forms cucurbit shape groove opening, opening has 50 ° evaporation cone angle, and the dimensional precision control of opening 1 is at ± 5 μ m; Above-mentioned two-sided etching also can be adopted single face etching at twice.
Adopt described mask plate to carry out the method for organic electroluminescent LED evaporation, comprise following several steps: the ito surface of mask plate and the combination of ITO semiconducting glass face, the corresponding organic vapor deposition source of the evaporation face of mask plate; As shown in Figure 5, the evaporation organic materials, make organic materials by the through hole on the mask plate, be attached to ITO semiconducting glass face on; Separate masks plate and ITO semiconducting glass are finished evaporation.
[embodiment 2]
A kind of evaporation mask plate, thick is 100 μ m, be shaped as the tetragon metal sheet, comprise ito surface and two faces of evaporation face of contacting with indium tin oxide (ITO), have the through hole that connects ito surface and evaporation face on the described mask plate, through hole is in the size of the opening on the ito surface size less than the opening on the evaporation face.
Described evaporation mask plate is tetragon nickel cobalt (alloy) metal sheet, the ito surface opening degree of depth of mask plate is 35 μ m, lateral dimension is 70 μ m, opening on the evaporation face overlaps with the ito surface open centre of template, and the open centre symmetry on the evaporation face, the degree of depth are 65 μ m, and lateral dimension is 140 μ m, and the opening hole wall on the evaporation face has certain concave arc degree, has formed 30 ° of deposition angles.Separately control by to ito surface and evaporation facet etch time obtains the opening degree of depth on needed ito surface opening and the evaporation face.Real bridge links together opening; The opening that makes by etch process, the wide evaporation face large size opening of the dark 140 μ m of the ito surface small orifices that the dark 50 μ m of 35 μ m are wide and 65 μ m connects and forms cucurbit shape groove opening, opening has 30 ° evaporation cone angle, and the dimensional precision control of ito surface opening is at ± 5 μ m; Above-mentioned two-sided etching also can be adopted single face etching at twice.
Adopt described mask plate to carry out the method for organic electroluminescent LED evaporation, comprise following several steps: the ito surface of mask plate and the combination of ITO semiconducting glass face, the corresponding organic vapor deposition source of the evaporation face of mask plate; The evaporation organic materials, make organic materials by the through hole on the mask plate, be attached to ITO semiconducting glass face on; Separate masks plate and ITO semiconducting glass are finished evaporation.
Claims (9)
1. the evaporation coating method of an organic electroluminescent LED comprises following several steps:
(1) the ito surface of mask plate and the combination of ITO semiconducting glass face, the corresponding organic vapor deposition source of the evaporation face of mask plate;
(2) evaporation organic materials, make organic materials by the through hole on the mask plate, be attached to ITO semiconducting glass face on;
(3) separate masks plate and ITO semiconducting glass are finished evaporation;
Wherein, the evaporation mask plate, be shaped as the tetragon metal sheet, comprise ito surface and two faces of evaporation face of contacting with indium tin oxide (ITO), has the through hole that connects ito surface and evaporation face on the described mask plate, less than the opening size on the evaporation face, the via openings of ito surface and evaporation face all has reversed cone angle to through hole at the opening size on the ito surface.
2. the evaporation coating method of organic electroluminescent LED according to claim 1 is characterized in that the via openings on described ito surface and the evaporation face passes through several real bridges, and opening is coupled together, and through hole is the rule mesh trellis at mask plate and distributes; Described mask plate is rectangle, and thickness is 5～200 μ m.
3. the evaporation coating method of organic electroluminescent LED according to claim 1 is characterized in that the angle of via openings reversed cone angle of ito surface is less than the angle of the via openings reversed cone angle of evaporation face.
4. the evaporation coating method of organic electroluminescent LED according to claim 1 is characterized in that the mask plate material is any one metal sheet in stainless steel, pure nickel, nickel cobalt (alloy), Rhometal, the Invar alloy.
5. the evaporation coating method of organic electroluminescent LED according to claim 1 is characterized in that mask plate thickness is 10～50 μ m; It is vertically cut open on the thickness direction of mask plate, and its sectional view is the cucurbit shape.
6. the evaporation coating method of organic electroluminescent LED according to claim 2 is characterized in that the direction on the long size of the opening limit on ito surface and the evaporation face for vertical, and the direction of opening undersized edge is horizontal; Ito surface opening lateral dimension is less than the lateral dimension of evaporation veil lattice opening.
7. the evaporation coating method of organic electroluminescent LED according to claim 3 is characterized in that ito surface via openings dimensional precision transversely is at ± 5 μ m; The vertical depth of the reversed cone angle opening of ito surface is at 5～25 μ m.
8. the evaporation coating method of organic electroluminescent LED according to claim 3 is characterized in that the latticed opening sidewalls of evaporation face large size is smooth awl wall, and tapering is at 30～50 °.
9. the evaporation coating method of organic electroluminescent LED according to claim 3 is characterized in that the vertical depth of reversed cone angle opening of ito surface is smaller or equal to the vertical depth of evaporation face cone angle opening.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012100106929A CN103205679A (en) | 2012-01-16 | 2012-01-16 | Vapor plating method for organic light-emitting diode |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012100106929A CN103205679A (en) | 2012-01-16 | 2012-01-16 | Vapor plating method for organic light-emitting diode |
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| CN103205679A true CN103205679A (en) | 2013-07-17 |
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| CN2012100106929A Pending CN103205679A (en) | 2012-01-16 | 2012-01-16 | Vapor plating method for organic light-emitting diode |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003045657A (en) * | 2001-05-24 | 2003-02-14 | Kyushu Hitachi Maxell Ltd | Deposition mask for organic el element and its manufacturing method |
| JP2004232026A (en) * | 2003-01-30 | 2004-08-19 | Ulvac Japan Ltd | Method for producing mask for vapor deposition |
| CN1551687A (en) * | 2003-05-06 | 2004-12-01 | Lg | Shadow mask for fabricating organic electroluminescent device |
| JP2004362908A (en) * | 2003-06-04 | 2004-12-24 | Hitachi Metals Ltd | Metal mask and manufacturing method thereof |
| JP2008091073A (en) * | 2006-09-29 | 2008-04-17 | Seiko Epson Corp | Mask, and manufacturing method of organic electroluminescent device |
-
2012
- 2012-01-16 CN CN2012100106929A patent/CN103205679A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003045657A (en) * | 2001-05-24 | 2003-02-14 | Kyushu Hitachi Maxell Ltd | Deposition mask for organic el element and its manufacturing method |
| JP2004232026A (en) * | 2003-01-30 | 2004-08-19 | Ulvac Japan Ltd | Method for producing mask for vapor deposition |
| CN1551687A (en) * | 2003-05-06 | 2004-12-01 | Lg | Shadow mask for fabricating organic electroluminescent device |
| JP2004362908A (en) * | 2003-06-04 | 2004-12-24 | Hitachi Metals Ltd | Metal mask and manufacturing method thereof |
| JP2008091073A (en) * | 2006-09-29 | 2008-04-17 | Seiko Epson Corp | Mask, and manufacturing method of organic electroluminescent device |
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Application publication date: 20130717 |
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