CN202576545U - Grooved mask plate for evaporation - Google Patents
Grooved mask plate for evaporation Download PDFInfo
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- CN202576545U CN202576545U CN 201220015890 CN201220015890U CN202576545U CN 202576545 U CN202576545 U CN 202576545U CN 201220015890 CN201220015890 CN 201220015890 CN 201220015890 U CN201220015890 U CN 201220015890U CN 202576545 U CN202576545 U CN 202576545U
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Abstract
The utility model discloses a grooved mask plate for evaporation. The grooved mask plate is a quadrangular metal plate, and comprises an indium tin oxide (ITO) surface contacting ITO and an evaporation surface. Openings are formed in the mask plate, and penetrate through the ITO surface and the evaporation surface. The openings in the ITO surface are latticed. The openings in the evaporation surface are grooved. The grooved openings are spaced from each other, and are in parallel. The areas of the openings in the ITO surface are smaller than those of the openings in the evaporation surface. The mask plate is provided with the evaporation surface with large opening designs and a certain thickness, so that the function of thickening and stabilizing the mask plate is realized under the condition of no influence on the evaporation; and the thickness range of a mask is widened, plate surface deformation caused by the small thickness of the mask is avoided, the service life of the mask is prolonged, and a good technical effect is achieved.
Description
Technical field
The utility model relates to vapor deposition required in the OLED manufacturing processed and uses the trench mask plate.
Background technology
Usually, the OLED device is a kind of emissive display, and it is luminous through electric fluorescence excitation organic cpds.According to the type of drive that can be arranged as the N * M pixel of matrix, the OLED device can be regarded passive matrix OLED (PMOLED) device or active matrix OLED (AMOLED) device as.The AMOLED device is compared with the PMOLED device, because its reduce power consumption and high resolving power are suitable for large-sized monitor.
According to the direction that light sends from organic cpds, the OLED device can be top emission OLED device, end emission OLED device or T&B emission OLED device.Top emission OLED device with the reverse direction of the substrate that is provided with pixel on luminous and different with end emission OLED, it has high aperture (Aperture ratio).
Demand for not only comprising the top emission type that is used for main display window but also comprising the end emitting OLED device that is used for less important window increases, because this device can be miniaturized and it consumes power seldom.Such OLED device can be mainly used in the mobile telephone that comprises external secondary display window and inner main display window.The power of less important display window consumption is less than main display window, and the state that it can keep out when mobile telephone is in the call waiting state, thereby allows at any time to observe accepting state, battery allowance, time etc.
Organic electroluminescent LED (Organic Light-Emitting Diode; OLED) be under certain electric field driven; Electronics and hole are injected into cathodic modification layer and hole injection layer from negative electrode and anode respectively, and in luminescent layer, meet, and the exciton of formation finally causes the emission of visible light.For organic electroluminescence device, we can be divided into two kinds by luminescent material: small molecules OLED and polymer OLED.
At first reported since the C.W.Tang of Kodak since the Organic Light-Emitting Display device of double-deck high-level efficiency, high brightness; Caused that people pay close attention to greatly; Because of its from main light emission; Driving voltage is low, luminosity is high, rich color and technology are simple, can be made into advantages such as ultra-thin, large area flexible device and becomes current FPD hot research fields.
Ionic liquid is liquid under near temperature room temperature or the room temperature, and a kind of low-melting organic salt of thing is made up of ion fully, and it forms ion generally is organic cation and inorganic anion.That ionic liquid has is colourless, do not have and smell, LV, control easily, wide phase temperature, have special character such as electrochemical stability window of gas phase pressure, thermally-stabilised, high conductivity and broad hardly; And can regulate the solvability of solion through the design of zwitterion, be widely used in from fields such as Green Chemistry chemical industry and catalytic field, functional materials, electric light and photovaltaic material, sun power, life sciences to inorganics, water, organism and polymkeric substance.
Above-mentioned Organnic electroluminescent device comprises first electrode, organic luminous layer and second electrode.When making organic light-emitting device, through photolithography, through etching reagent composition on ITO.When photolithography was used for preparing second electrode again, moisture infiltrated between the organic luminous layer and second electrode, can shorten the life-span of organic light-emitting device significantly, reduced its performance.In order to overcome above problem, adopt evaporation process that luminous organic material is deposited on the substrate, form organic luminous layer, this method needs supporting high precision vapor deposition with trench mask plate (being also referred to as shadow mask).The making of second electrode is with the making method of luminescent layer.
In evaporate process; Along with the prolongation of time, temperature is also in continuous rising, and high temperature can reach 60 ℃; Because the shadow mask opening size is weighed with micron order; And need the very thin thickness of the organic materials of vapor deposition to the ito glass, weigh with nano level unit, so pairs of openings dimensional precision, opening pattern and thickness of slab need be strict with.Because the vapor deposition that traditional technology is used is generally individual layer with the opening of shadow mask, the opening on the shadow mask does not have the tool zero draft yet, so can cause the organic materials particulate to block, influences the homogeneity of vapor deposition layer, and the reduction evaporating quality has increased manufacturing cost.
Traditional technology adopts the OLED mask plate of individual layer opening; And the opening zero draft, as shown in Figure 1, the organic materials particle passes mask plate and is attached on the substrate from all angles; Opening 1 zero draft; When particle tilts to inject angle when being less than or equal to θ, this part particle can be run into perforated wall and crested can't arrive substrate.This phenomenon can produce following problem: make the particle that tilts to inject excalation occur, cause briliancy to descend, and on substrate, can not form the thickness and the shape of hope.
About 100 μ m, and the organic materials thickness of vapor deposition is about 100nm with the thickness of shadow mask for general vapor deposition, and the opening size minimum on the shadow mask can be 10 μ m; So the sidewall of zero draft opening will certainly produce in evaporate process and block, but then, if only the thickness of attenuate shadow mask reduces the coverage extent of organic materials; Can influence the work-ing life of shadow mask again, because shadow mask is thin excessively, yielding; The use of the shadow mask of influence reduces evaporating quality.
Traditional vapor deposition has three kinds with the opening kind of trench mask plate: point-like shadow mask board (Invar-Shadow Mask), grid type/slotted mask plate (Aperture Grille Mask/Slit Mask), slit shadow mask board (Slot Mask).All has open defect like Fig. 1 opening 11 described single face zero drafts.
The utility model provides in a kind of OLED manufacturing processed required vapor deposition to use the trench mask plate; This kind mask plate has the design of tapering opening; Be the ito surface opening size less than vapor deposition face opening size, solved organic granular because covering of perforated wall and can't reach the problem of substrate.
The utility model content
The utility model technical problem to be solved is in the existing OLED manufacturing technology; Organic granular can't reach the technical problem of substrate during vapor deposition owing to covering of perforated wall; Provide a kind of new vapor deposition to use the trench mask plate, use that this mask plate has that the rate of utilization of organic materials is high, yield polymer films is high, mask plate long service life, the advantage of practicing thrift cost.
For solving the problems of the technologies described above; The technical scheme that the utility model adopts is following: a kind of vapor deposition is used the trench mask plate, is shaped as the tetragon metal sheet, comprises ito surface and two faces of vapor deposition face of contacting with indium tin oxide (ITO) face; Has the opening that connects ito surface and vapor deposition face on the said mask plate; Opening on ito surface is latticed, and the opening on the vapor deposition face is a channel form, and said groove shape opening is with the space and be parallel to each other; Port area on the ito surface is less than the port area on the vapor deposition face.
In the technique scheme, the groove shape opening on the said vapor deposition face laterally through several real bridges, couples together opening; Said mask plate is a rectangle, and thickness is 5～200 μ m.Said ito surface comes opening through horizontal and vertical real bridge in the ito surface equi-spaced apart; The latticed opening that connects and the center of channel form opening overlap.Groove shape opening vertical cross section on the thickness direction of mask plate is the cucurbit shape, and the groove shape opening of groove ito surface and vapor deposition face has cone angle, and the reversed cone angle angle of ito surface opening is less than the angle of the cone angle of the groove shape opening of vapor deposition face; The cone angle of vapor deposition face groove opening is at 30～50 °.The latticed opening sidewalls of ito surface small size is smooth back taper wall, and tapering is 0-8 °.The lateral dimension precision of described ito surface is controlled at ± 5 μ m; The vertical depth of the reversed cone angle opening of ito surface is at 5～25 μ m.
The vertical thickness of the reversed cone angle opening of ito surface is smaller or equal to the vertical thickness of vapor deposition face cone angle opening.The mask plate material is any one metal sheet in stainless steel, pure nickel, nickel cobalt (alloy), Rhometal, the Invar alloy; Mask plate thickness is 10～50 μ m.Vapor deposition face large size channel form opening sidewalls is smooth awl wall.It is a thin-and-long at the vapor deposition face, does not have real bridge in the vertical at interval; At the ito surface opening is mesh shape, has real bridge in the vertical with original thin-and-long opening at interval.
When said mask plate used, ito surface and vapor deposition substrate ito glass closely were adjacent to, and organic materials passes through ito surface groove shape opening vapor deposition to ito glass substrate.
The utility model is following through the beneficial effect of this utility model: opening has tapering, and the organic materials particle was blocked when this cone angle was avoided vapor deposition, and vapor deposition is less than on the ito glass, thereby has improved the yield polymer films of organic materials, has reduced cost; The design of opening Pear-Shaped has guaranteed that mask plate and ito glass substrate be close to the opening size precision of face (being ito surface) and be controlled in the claimed range; Mask plate has the certain thickness vapor deposition face of the big opening design of long and narrow bar shaped, guarantees under the situation that does not influence vapor deposition, and mask plate has been carried out thickening firm effect.Mask plate has the certain thickness vapor deposition face of big opening design, guarantees under the situation that does not influence vapor deposition, and mask plate has been carried out thickening firm effect; Enlarge the thickness range of shadow mask, avoided because the thin excessively plate facial disfigurement that causes of shadow mask, improved shadow mask work-ing life, obtained better technical effect.
Description of drawings
Fig. 1 is a mask plate structure synoptic diagram in the prior art.
Fig. 2 is a mask plate structure synoptic diagram among the utility model embodiment 1.
Fig. 3 is that mask plate and ito glass substrate cooperate synoptic diagram.
Fig. 4 is a mask plate groove synoptic diagram.
Fig. 5 is a trench mask plate vapor deposition face vertical view.
Among Fig. 1,1 is mask plate zero draft opening, and 2 is ito glass, and 3 is the single layer mask plate, and 4 is ito surface, and 5 is the vapor deposition face.
Among Fig. 2,1 is the ito surface small orifices, and 2 is vapor deposition face large size opening, and 3 is the single layer mask plate, and 4 is ito surface, and 5 is the vapor deposition face.
Among Fig. 3,1 is the ito surface small orifices, and 2 is vapor deposition face large size opening, and 3 is mask plate, and 4 is ito surface, and 5 is the vapor deposition face.
Among Fig. 4,111 is vapor deposition face large size opening, and 222 is the ito surface small orifices, and 333 is the real bridge of mask plate ito surface.
Among Fig. 5,111 is vapor deposition face large size opening, and 222 is the ito surface small orifices, and 333 is the real bridge of mask plate ito surface, and 5 is the vapor deposition face.
Through specific embodiment the utility model is done further to set forth below.
Embodiment
[embodiment 1]
One thick is that the vapor deposition of 50 μ m is used the trench mask plate; Be shaped as the tetragon metal sheet; Comprise ito surface and two faces of vapor deposition face of contacting with indium tin oxide (ITO) face, have the opening that connects ito surface and vapor deposition face on the said mask plate, the opening on ito surface is latticed; Opening on the vapor deposition face is a channel form, and said groove shape opening is with the space and be parallel to each other; Port area on the ito surface is less than the port area on the vapor deposition face.
Choosing Invar alloy is the mask plate material, adopts etch process, forms like 222 latticed openings Fig. 5 for 4 half quarters from the ito surface of mask plate, and 222 degree of depth are 15 μ m, and 222 in the vertical through real bridge 333 connections, and 222 lateral dimension is 70 μ m; Form like 111 long and narrow openings Fig. 4 from vapor deposition face 5 etchings of mask plate, and guarantee 111 and 222 center coincidence, and 111 centrosymmetry; 111 degree of depth are 35 μ m; 111 lateral dimensions are 140 μ m, and 111 opening hole wall has certain concave arc degree, have formed like 50 ° of the deposition angles among Fig. 3; 111 is the thin-and-long opening, and it is spaced apart not have real bridge 333; Opening sectional view through above-mentioned etch process makes is as shown in Figure 5; The wide vapor deposition face large size opening 111 of the dark 140 μ m of ito surface small orifices 222 that the dark 70 μ m of 15 μ m are wide and 35 μ m connects and forms cucurbit shape groove opening; Opening has 50 ° cone angle, and 222 dimensional precision is controlled at ± 5 μ m.The above-mentioned two step etching that is etched to also can form above-mentioned two kinds of openings through ito surface and the etching simultaneously of vapor deposition face.
[embodiment 2]
A kind of vapor deposition is used the trench mask plate; Transverse cross-sectional view is as shown in Figure 2; Thick is 50 μ m, is shaped as the tetragon metal sheet, comprises the ito surface and the vapor deposition face 5 that contact with indium tin oxide (ITO) face; Have the opening that connects ito surface and vapor deposition face on the said mask plate, open hole is in the size of the latticed opening 1 on the ito surface size less than the channel form opening 2 on the vapor deposition face.Choosing Invar alloy is the mask plate material, adopts two-sided etch process, and Fig. 3 is that mask plate and ito surface cooperate synoptic diagram.
Form ito surface opening 1 from ito surface 4 etchings of mask plate like mask plate Fig. 2; Opening 1 degree of depth is 15 μ m, and lateral dimension is 70 μ m, forms like the opening on the vapor deposition face Fig. 22 from vapor deposition face 5 etchings of mask plate; And guarantee that the opening 2 on the vapor deposition face overlaps with ito surface opening 1 center of template; And 2 centrosymmetry of the opening on the vapor deposition face, the degree of depth are 35 μ m, and lateral dimension is 140 μ m; And the opening hole wall of the opening on the vapor deposition face 2 has certain concave arc degree, has formed like 50 ° of the deposition angles among Fig. 3.Through separately control, obtain the opening degree of depth of the opening 2 on needed ito surface opening 1 and the vapor deposition face to ito surface and vapor deposition facet etch time.As shown in Figure 4, real bridge 3 links together opening; Opening sectional view through above-mentioned etch process makes is as shown in Figure 3; The wide vapor deposition face large size opening 2 of the dark 140 μ m of ito surface small orifices 1 that the dark 70 μ m of 15 μ m are wide and 35 μ m connects and forms cucurbit shape groove opening; Opening has 50 ° vapor deposition cone angle, and the dimensional precision of opening 1 is controlled at ± 5 μ m; Above-mentioned two-sided etching also can be adopted single face etching at twice.The latticed opening sidewalls of ito surface small size is smooth back taper wall, and tapering is 2 °.
[embodiment 3]
A kind of vapor deposition is used the trench mask plate; Thick is 100 μ m; Be shaped as the tetragon metal sheet; Comprise ito surface and two faces of vapor deposition face of contacting with indium tin oxide (ITO) face, have the through hole that connects ito surface and vapor deposition face on the said mask plate, through hole is in the size of the opening on the ito surface size less than the opening on the vapor deposition face.
Said vapor deposition uses the trench mask plate to be tetragon nickel cobalt (alloy) metal sheet, and the ito surface opening degree of depth of mask plate is 25 μ m, and lateral dimension is 50 μ m; Channel form opening on the vapor deposition face overlaps with the latticed open centre of the ito surface of template; And the symmetry of the open centre on the vapor deposition face, the degree of depth is 75 μ m, lateral dimension is 100 μ m; And the opening hole wall on the vapor deposition face has certain concave arc degree, has formed 30 ° of deposition angles.Separately control through to ito surface and vapor deposition facet etch time obtains the opening degree of depth on needed ito surface opening and the vapor deposition face.Real bridge links together opening; The opening that makes through etch process; The wide vapor deposition face large size opening of the dark 100 μ m of ito surface small orifices that the dark 50 μ m of 25 μ m are wide and 75 μ m connects and forms cucurbit shape groove opening; Opening has 30 ° vapor deposition cone angle, and the dimensional precision of ito surface opening is controlled at ± 5 μ m; Above-mentioned two-sided etching also can be adopted single face etching at twice.The latticed opening sidewalls of ito surface small size is smooth back taper wall, and tapering is 8 °.
Claims (9)
1. a vapor deposition is used the trench mask plate; Be shaped as the tetragon metal sheet, it is characterized in that, comprise two faces of ito surface and vapor deposition face; Has the opening that connects ito surface and vapor deposition face on the said mask plate; Opening on ito surface is latticed, and the opening on the vapor deposition face is a channel form, space and being parallel to each other between the said groove shape opening; Port area on the ito surface is less than the port area on the vapor deposition face.
2. vapor deposition according to claim 1 is used the trench mask plate, it is characterized in that the groove shape opening on the said vapor deposition face laterally passes through several real bridges, and opening is coupled together; Said mask plate is a rectangle, and thickness is 5～200 μ m.
3. vapor deposition according to claim 2 is used the trench mask plate, it is characterized in that said ito surface comes opening through horizontal and vertical real bridge in the ito surface equi-spaced apart; The latticed opening that connects and the center of channel form opening overlap.
4. vapor deposition according to claim 1 is used the trench mask plate, it is characterized in that the groove shape opening of groove ito surface and vapor deposition face has reversed cone angle, and the reversed cone angle angle of ito surface opening is less than the angle of the reversed cone angle of the groove shape opening of vapor deposition face; The cone angle of vapor deposition face groove opening is at 30～50 °.
5. vapor deposition according to claim 4 is used the trench mask plate, it is characterized in that the lateral dimension precision of described ito surface is controlled at ± 5 μ m; The vertical depth of the reversed cone angle opening of ito surface is at 5～25 μ m.
6. vapor deposition according to claim 4 is used the trench mask plate, and the vertical thickness of reversed cone angle opening that it is characterized in that ito surface is smaller or equal to the vertical thickness of vapor deposition face cone angle opening.
7. vapor deposition according to claim 1 is used the trench mask plate, it is characterized in that the mask plate material is any one metal sheet in stainless steel, pure nickel, nickel cobalt (alloy), Rhometal, the Invar alloy; Mask plate thickness is 10～50 μ m.
8. vapor deposition according to claim 1 is used the trench mask plate, it is characterized in that vapor deposition face large size channel form opening sidewalls is smooth awl wall.
9. vapor deposition according to claim 1 is used the trench mask version, it is characterized in that the latticed opening sidewalls of ito surface small size is smooth back taper wall, and tapering is 0-8 °.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220015890 CN202576545U (en) | 2012-01-16 | 2012-01-16 | Grooved mask plate for evaporation |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220015890 CN202576545U (en) | 2012-01-16 | 2012-01-16 | Grooved mask plate for evaporation |
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| CN202576545U true CN202576545U (en) | 2012-12-05 |
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| CN 201220015890 Expired - Fee Related CN202576545U (en) | 2012-01-16 | 2012-01-16 | Grooved mask plate for evaporation |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102978568A (en) * | 2012-12-25 | 2013-03-20 | 唐军 | OLED (organic light-emitting diode) evaporation cover and processing method thereof |
| CN103014619A (en) * | 2012-12-26 | 2013-04-03 | 唐军 | Mask plate and processing method thereof |
| CN103205712A (en) * | 2012-01-16 | 2013-07-17 | 昆山允升吉光电科技有限公司 | Trench mask plate for vapor plating |
| CN103589996A (en) * | 2013-10-09 | 2014-02-19 | 昆山允升吉光电科技有限公司 | Mask plate |
| CN103882375A (en) * | 2014-03-12 | 2014-06-25 | 京东方科技集团股份有限公司 | Mask plate and manufacturing method thereof |
| CN107604303A (en) * | 2013-10-15 | 2018-01-19 | 大日本印刷株式会社 | Metallic plate, the manufacture method of metallic plate and the method using metallic plate manufacture deposition mask |
| US11066738B2 (en) | 2018-03-30 | 2021-07-20 | Kunshan Go-Visionox Opto-Electronics Co., Ltd. | Mask plates and display panels |
| US11217750B2 (en) | 2014-05-13 | 2022-01-04 | Dai Nippon Printing Co., Ltd. | Metal plate, method of manufacturing metal plate, and method of manufacturing mask by using metal plate |
-
2012
- 2012-01-16 CN CN 201220015890 patent/CN202576545U/en not_active Expired - Fee Related
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103205712A (en) * | 2012-01-16 | 2013-07-17 | 昆山允升吉光电科技有限公司 | Trench mask plate for vapor plating |
| CN102978568A (en) * | 2012-12-25 | 2013-03-20 | 唐军 | OLED (organic light-emitting diode) evaporation cover and processing method thereof |
| CN103014619A (en) * | 2012-12-26 | 2013-04-03 | 唐军 | Mask plate and processing method thereof |
| CN103589996A (en) * | 2013-10-09 | 2014-02-19 | 昆山允升吉光电科技有限公司 | Mask plate |
| CN107604303A (en) * | 2013-10-15 | 2018-01-19 | 大日本印刷株式会社 | Metallic plate, the manufacture method of metallic plate and the method using metallic plate manufacture deposition mask |
| US11486031B2 (en) | 2013-10-15 | 2022-11-01 | Dai Nippon Printing Co., Ltd. | Metal plate |
| CN103882375A (en) * | 2014-03-12 | 2014-06-25 | 京东方科技集团股份有限公司 | Mask plate and manufacturing method thereof |
| CN103882375B (en) * | 2014-03-12 | 2016-03-09 | 京东方科技集团股份有限公司 | A kind of mask plate and preparation method thereof |
| US11217750B2 (en) | 2014-05-13 | 2022-01-04 | Dai Nippon Printing Co., Ltd. | Metal plate, method of manufacturing metal plate, and method of manufacturing mask by using metal plate |
| US11066738B2 (en) | 2018-03-30 | 2021-07-20 | Kunshan Go-Visionox Opto-Electronics Co., Ltd. | Mask plates and display panels |
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