CN103205686A - Long-narrow trench mask plate for vapor plating - Google Patents
Long-narrow trench mask plate for vapor plating Download PDFInfo
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- CN103205686A CN103205686A CN 201210010699 CN201210010699A CN103205686A CN 103205686 A CN103205686 A CN 103205686A CN 201210010699 CN201210010699 CN 201210010699 CN 201210010699 A CN201210010699 A CN 201210010699A CN 103205686 A CN103205686 A CN 103205686A
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Abstract
The invention relates to a long-narrow trench mask plate for vapor plating, and aims to mainly solve the technical problem that organic particles cannot reach a substrate due to shadowing of a mask plate aperture wall during vapor plating in the existing OLED (organic light-emitting diode) manufacturing technologies. The long-narrow trench mask plate for vapor plating adopted in the invention is a quadrilateral metal plate, which comprises an ITO (indium tin oxide) surface in contact with an ITO and a vapor plating surface. The mask plate is equipped with long-narrow trenches running through the ITO surface and the vapor plating surface, and the aperture size of the long-narrow trenches on the ITO surface is smaller than that on the vapor plating surface. According to the technical scheme, the problem is well solved. Thus, the long-narrow trench mask plate for vapor plating can be used in the industrial production of organic light-emitting diodes.
Description
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Technical field
The present invention relates to evaporation required in the OLED manufacturing processed with long and narrow trench mask plate.
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Background technology
Usually, the OLED device is a kind of emissive display, and it is luminous by electric fluorescence excitation organic compound.According to the type of drive that can be arranged as the N * M pixel of matrix, the OLED device can be regarded passive matrix OLED (PMOLED) device or active matrix OLED(AMOLED as) device.The AMOLED device is compared with the PMOLED device, because its reduce power consumption and high resolving power are suitable for large-sized monitor.
According to the direction that light sends from organic compound, the OLED device can be top emission OLED device, end emission OLED device or T﹠B emission OLED device.Top emission OLED device with the reverse direction of the substrate that is provided with pixel on luminous and different with end emission OLED, it has high aperture (Aperture ratio).
This device increases for not only comprising for the top emission type of main display window but also the demand that comprises for the end emitting OLED device of less important window, because can be miniaturized and it consumes seldom power.Such OLED device can be mainly used in comprising the mobile telephone of external secondary display window and inner main display window.The power of less important display window consumption is less than main display window, and the state that it can keep out when mobile telephone is in the call waiting state, thereby allows at any time to observe accepting state, battery allowance, time etc.
Organic electroluminescent LED (Organic Light-Emitting Diode, OLED) be under certain electric field driven, electronics and hole are injected into cathodic modification layer and hole injection layer from negative electrode and anode respectively, and meet in luminescent layer, and the exciton of formation finally causes the emission of visible light.For organic electroluminescence device, we can be divided into two kinds by luminescent material: small molecules OLED and polymer OLED.
At first reported since the C.W.Tang of Kodak since the Organic Light-Emitting Display device of double-deck high-level efficiency, high brightness, caused that people pay close attention to greatly, because of its from main light emission, driving voltage is low, luminosity is high, rich color and technology are simple, can be made into advantages such as ultra-thin, large area flexible device and becomes the research focus in current flat pannel display field.
Ionic liquid is liquid under near temperature room temperature or the room temperature, and a kind of low-melting organic salt of thing is made up of ion fully, and it forms ion generally is organic cation and inorganic anion.That ionic liquid has is colourless, do not have smell, low viscosity, control easily, wide phase temperature, have that gas phase is pressed hardly, character especially such as thermally-stabilised, high conductivity and wideer electrochemical stability window, and can regulate solion to the solvability of inorganics, water, organism and polymkeric substance by the design of zwitterion, be widely used in from fields such as Green Chemistry chemical industry and catalytic field, functional materials, electric light and photoelectric material, sun power, life sciences.
Above-mentioned Organnic electroluminescent device comprises first electrode, organic luminous layer and second electrode.When making organic light-emitting device, by photolithography, by etching reagent composition on ITO.When photolithography was used for preparing second electrode again, moisture infiltrated between organic luminous layer and second electrode, can shorten the life-span of organic light-emitting device significantly, reduced its performance.In order to overcome above problem, adopt evaporation process that luminous organic material is deposited on the substrate, form organic luminous layer, this method needs supporting high precision evaporation with long and narrow trench mask plate (being also referred to as shadow mask).The making of second electrode is with the making method of luminescent layer.
In evaporate process, prolongation along with the time, temperature is also in continuous rising, high temperature can reach 60 ℃, because the shadow mask opening size is weighed with micron order, and need the very thin thickness of the organic materials of evaporation to the ito glass, weigh with nano level unit, so need be strict with opening dimensional precision, opening pattern and thickness of slab.Because the evaporation that traditional technology is used is generally individual layer with the opening of shadow mask, the opening on the shadow mask does not have the tool zero draft yet, so can cause blocking of organic materials particle, influences the homogeneity of evaporation layer, and the reduction evaporating quality has increased manufacturing cost.
Traditional technology adopts the OLED mask plate of individual layer opening; and opening zero draft; as shown in Figure 1; the organic materials particle passes mask plate and is attached on the substrate from all angles; opening 1 zero draft; when particle tilts to inject angle when being less than or equal to θ, this part particle can be run into perforated wall and crested can't arrive substrate.This phenomenon can produce following problem: make the particle that tilts to inject excalation occur, cause briliancy to descend, and can not form thickness and the shape of hope on substrate.
General evaporation uses the thickness of shadow mask about 100 μ m, and the organic materials thickness of evaporation is only about 100nm, opening size minimum on the shadow mask can be 10 μ m, blocks so the sidewall of zero draft opening will certainly produce in evaporate process, but then, if only the thickness of attenuate shadow mask reduces the coverage extent of organic materials, can influence the work-ing life of shadow mask again, because shadow mask is thin excessively, yielding, the use of the shadow mask of influence reduces evaporating quality.
Traditional evaporation has three kinds with the opening kind of trench mask plate: point-like shadow mask board (Invar-Shadow Mask), grid type/slotted mask plate (Aperture Grille Mask/Slit Mask), slit shadow mask board (Slot Mask).All has the open defect as Fig. 1 opening 11 described single face zero drafts.
The invention provides evaporation required in a kind of OLED manufacturing processed with long and narrow trench mask plate, this kind mask plate has the design of tapering opening, be the ito surface opening size less than evaporation face opening size, solved organic granular because covering of perforated wall and can't reach the problem of substrate.
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Summary of the invention
Technical problem to be solved by this invention is in the existing OLED manufacturing technology, organic granular can't reach the technical problem of substrate during evaporation owing to covering of perforated wall, provide a kind of new evaporation with long and narrow trench mask plate, use this mask plate to have the rate of utilization height, yield polymer films height, mask plate long service life of organic materials, the advantage of saving cost.
For solving the problems of the technologies described above, the technical solution used in the present invention is as follows: a kind of evaporation is with long and narrow trench mask plate, be shaped as the tetragon metal sheet, comprise ito surface and two faces of evaporation face of contacting with indium tin oxide (ITO) face, has the long and narrow groove opening that connects ito surface and evaporation face on the described mask plate, overlap described groove shape opening space and being parallel to each other in the opening on the ito surface and the open centre on the evaporation face; Port area on the ito surface is less than the port area on the evaporation face.
In the technique scheme, the groove shape opening on the described evaporation face laterally by several real bridges, couples together opening; Described mask plate is rectangle, and thickness is 5～200 μ m.Described ito surface opening comes opening by horizontal real bridge in the ito surface equi-spaced apart; The latticed opening that connects and the horizontal and vertical center of long and narrow channel form opening all overlap.Groove shape opening vertical cross section on the thickness direction of mask plate is the cucurbit shape, and the groove shape opening of ito surface and evaporation face has reversed cone angle, and the angle of the reversed cone angle of ito surface opening is less than the angle of the groove shape opening reversed cone angle of evaporation face; The cone angle of the long and narrow groove opening of evaporation face is at 30-50 °, and the lateral dimension precision of described ito surface is controlled at ± 5 μ m; The vertical depth of the reversed cone angle opening of ito surface is at 5～25 μ m.The long and narrow groove opening sidewall of ito surface small size is smooth back taper wall, and tapering is 0-8 °.
The vertical thickness of the reversed cone angle opening of ito surface is smaller or equal to the vertical thickness of evaporation face cone angle opening.The mask plate material is any one metal sheet in stainless steel, pure nickel, nickel cobalt (alloy), Rhometal, the Invar alloy; Mask plate thickness is 10～50 μ m.The long and narrow channel form opening sidewalls of evaporation face large size is smooth awl wall.It is thin-and-long at the evaporation face, does not have real bridge in the vertical at interval.When described mask plate used, ito surface and evaporation substrate ito glass closely were adjacent to, and organic materials passes through ito surface groove shape opening evaporation to ito glass substrate.
The present invention is as follows by this beneficial effect of the invention: opening has tapering, and the organic materials particle was blocked when this cone angle was avoided evaporation, and evaporation is less than on the ito glass, thereby has improved the yield polymer films of organic materials, has reduced cost; The design of opening Pear-Shaped has guaranteed that mask plate and ito glass substrate be close to the opening size precision control of face (being ito surface) in claimed range; Mask plate has the certain thickness evaporation face of the big opening design of long and narrow bar shaped, guarantees under the situation that does not influence evaporation, and mask plate has been carried out thickening firm effect.Mask plate has the certain thickness evaporation face of big opening design, guarantees under the situation that does not influence evaporation, and mask plate has been carried out thickening firm effect; Enlarge the thickness range of shadow mask, avoided because the thin excessively plate facial disfigurement that causes of shadow mask, improved shadow mask work-ing life, obtained better technical effect.
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Description of drawings
Fig. 1 is mask plate structure synoptic diagram in the prior art.
Fig. 2 is mask plate structure synoptic diagram in the embodiment of the invention 1.
Fig. 3 is that mask plate and ito glass substrate cooperate synoptic diagram.
Fig. 4 is the long and narrow groove synoptic diagram of mask plate.
Fig. 5 is long and narrow trench mask plate evaporation face vertical view.
Among Fig. 1,1 is the zero draft opening of mask plate, and 2 is ito glass, and 3 is the single layer mask plate, and 4 is ito surface, and 5 is the evaporation face.
Among Fig. 2,1 is the ito surface small orifices, and 2 is evaporation face large size opening, and 3 is the single layer mask plate, and 4 is ito surface, and 5 is the evaporation face.
Among Fig. 3,1 is the ito surface small orifices, and 2 is evaporation face large size opening, and 3 is mask plate, and 4 is ito surface, and 5 is the evaporation face.
Among Fig. 4,01 is evaporation face large size opening, and 02 is the ito surface small orifices.
Among Fig. 5,01 is evaporation face large size opening, and 02 is the ito surface small orifices, and 5 is the evaporation face.
The present invention is further elaborated below by specific embodiment.
Embodiment
[embodiment 1]
One thick is that the evaporation of 50 μ m is with long and narrow trench mask plate, be shaped as the rectangle metal sheet as shown in Figure 2, comprise ito surface and two faces of evaporation face of contacting with indium tin oxide (ITO) face, has the long and narrow groove opening that connects ito surface and evaporation face on the described mask plate, overlap in the opening on the ito surface and the open centre on the evaporation face, described groove shape opening is with the space and be parallel to each other; Port area on the ito surface is less than the port area on the evaporation face.
Choosing Invar alloy is the mask plate material, adopts etch process, forms as long and narrow opening 02 Fig. 5 for 4 half quarters from the ito surface of mask plate, and opening 02 degree of depth is 15 μ m, and the lateral dimension of opening 02 is 70 μ m; Form as Fig. 5 split shed 01 long and narrow opening from evaporation face 5 etchings of mask plate, and the center that guarantees the two sides opening overlaps, opening 01 centrosymmetry, the degree of depth is 35 μ m, opening 01 lateral dimension is 140 μ m, and the opening hole wall of opening 01 has certain concave arc degree, has formed as the deposition angles 30-50 among Fig. 6 °; As shown in Figure 4, thin-and-long opening 01 is at vertical no real bridge, and thin-and-long opening 02 is not vertically having real bridge yet; The opening that makes by above-mentioned etch process, the wide evaporation face large size opening 02 of the dark 140 μ m of the ito surface small orifices 02 that the dark 70 μ m of 15 μ m are wide and 35 μ m connects and forms the long and narrow groove opening of cucurbit shape, opening has 30-50 ° cone angle, and 02 dimensional precision control is at ± 5 μ m.
The above-mentioned two step etching that is etched to also can form above-mentioned two kinds of openings by ito surface and the etching simultaneously of evaporation face.
[embodiment 2]
A kind of evaporation is with long and narrow trench mask plate, transverse cross-sectional view as shown in Figure 2, thick is 50 μ m, be shaped as the tetragon metal sheet, comprise ito surface 4 and 5 two faces of evaporation face of contacting with indium tin oxide (ITO) face, have the opening that connects ito surface and evaporation face on the described mask plate, open hole is in the size of the latticed opening 1 on the ito surface size less than the long and narrow channel form opening 2 on the evaporation face.Choosing Invar alloy is the mask plate material, adopts two-sided etch process, and Fig. 3 is that mask plate and ito surface cooperate synoptic diagram.
Form ito surface opening 1 as mask plate Fig. 2 from ito surface 4 etchings of mask plate, opening 1 degree of depth is 15 μ m, lateral dimension is 70 μ m, form as the opening 2 on the evaporation face Fig. 2 from evaporation face 5 etchings of mask plate, and guarantee that the opening 2 on the evaporation face overlaps with ito surface opening 1 center of template, and 2 centrosymmetry of the opening on the evaporation face, the degree of depth is 35 μ m, lateral dimension is 140 μ m, and the opening hole wall of the opening on the evaporation face 2 has certain concave arc degree, has formed as 50 ° of the deposition angles among Fig. 3.By the separately control to ito surface and evaporation facet etch time, obtain the opening degree of depth of the opening 2 on needed ito surface opening 1 and the evaporation face.As shown in Figure 4, real bridge 3 links together opening; The opening sectional view that makes by above-mentioned etch process as shown in Figure 3, the wide evaporation face large size opening 2 of the dark 140 μ m of the ito surface small orifices 1 that the dark 70 μ m of 15 μ m are wide and 35 μ m connects and forms the long and narrow groove opening of cucurbit shape, opening has 50 ° evaporation cone angle, and the dimensional precision control of opening 1 is at ± 5 μ m; Above-mentioned two-sided etching also can be adopted single face etching at twice.The long and narrow groove opening sidewall of ito surface small size is smooth back taper wall, and tapering is 4 °.
[embodiment 3]
A kind of evaporation is with long and narrow trench mask plate, thick is 100 μ m, is shaped as the tetragon metal sheet, comprises two faces of ito surface and evaporation face, have the long and narrow channel form opening that connects ito surface and evaporation face on the described mask plate, opening in the size on the ito surface less than the size on the evaporation face.
Described evaporation is tetragon nickel cobalt (alloy) metal sheet with long and narrow trench mask plate, the ito surface opening degree of depth of mask plate is 25 μ m, lateral dimension is 50 μ m, long and narrow channel form opening on the evaporation face overlaps with the long and narrow channel form open centre of the ito surface of template, and the open centre symmetry on the evaporation face, the degree of depth are 75 μ m, and lateral dimension is 100 μ m, and the opening hole wall on the evaporation face has certain concave arc degree, has formed 30 ° of deposition angles.By the separately control to ito surface and evaporation facet etch time, obtain the degree of depth of needed ito surface opening and evaporation face opening.Real bridge links together opening; The opening that makes by etch process, the wide evaporation face large size opening of the dark 100 μ m of the ito surface small orifices that the dark 50 μ m of 25 μ m are wide and 75 μ m connects and forms the long and narrow groove opening of cucurbit shape, opening has 30 ° evaporation cone angle, and the dimensional precision control of ito surface opening is at ± 5 μ m; Above-mentioned two-sided etching also can be adopted single face etching at twice.The long and narrow groove opening sidewall of ito surface small size is smooth back taper wall, and tapering is 8 °.
Claims (10)
1. an evaporation is with long and narrow trench mask plate, be shaped as the tetragon metal sheet, comprise ito surface and two faces of evaporation face of contacting with indium tin oxide (ITO) face, has the long and narrow groove opening that connects ito surface and evaporation face on the described mask plate, overlap described long and narrow groove opening space and being parallel to each other at the long and narrow groove opening on the ito surface and the long and narrow groove opening center on the evaporation face; Long and narrow groove opening area on the ito surface is less than the long and narrow groove opening area on the evaporation face.
2. evaporation according to claim 1 is characterized in that with long and narrow trench mask plate the groove shape opening on described ito surface and the evaporation face laterally passes through several real bridges, and opening is coupled together; Described mask plate is rectangle, and thickness is 5～200 μ m.
3. evaporation according to claim 2 is with long and narrow trench mask plate, it is characterized in that describedly by horizontal real bridge long and narrow groove opening being come in the ito surface equi-spaced apart.
4. evaporation according to claim 1 is with long and narrow trench mask plate, it is characterized in that groove shape opening vertical cross section on the thickness direction of mask plate is the cucurbit shape, the groove shape opening of ito surface and evaporation face has reversed cone angle, and the reversed cone angle angle of ito surface opening is less than the angle of the cone angle of the groove shape opening of evaporation face; The cone angle of the long and narrow groove opening of evaporation face is at 30～50 °.
5. evaporation according to claim 4 is characterized in that with long and narrow trench mask plate the lateral dimension precision control of described ito surface is at ± 5 μ m; The vertical depth of the reversed cone angle opening of ito surface is at 5～25 μ m.
6. evaporation according to claim 5 is with long and narrow trench mask plate, it is characterized in that the vertical thickness of reversed cone angle opening of ito surface is smaller or equal to the vertical thickness of evaporation face cone angle opening.
7. evaporation according to claim 1 is characterized in that with long and narrow trench mask plate the mask plate material is any one metal sheet in stainless steel, pure nickel, nickel cobalt (alloy), Rhometal, the Invar alloy; Mask plate thickness is 10～50 μ m.
8. evaporation according to claim 1 is characterized in that with long and narrow trench mask plate the long and narrow groove opening of evaporation face large size (2) sidewall is smooth awl wall.
9. evaporation according to claim 1 is characterized in that with long and narrow trench mask plate the long and narrow groove opening sidewall of ito surface small size is smooth back taper wall, and tapering is 0-8 °.
10. evaporation according to claim 1 is with long and narrow trench mask plate, and when it is characterized in that described mask plate uses, ito surface and evaporation substrate ito glass closely are adjacent to, and organic materials passes through ito surface opening evaporation to ito glass substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201210010699 CN103205686A (en) | 2012-01-16 | 2012-01-16 | Long-narrow trench mask plate for vapor plating |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201210010699 CN103205686A (en) | 2012-01-16 | 2012-01-16 | Long-narrow trench mask plate for vapor plating |
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| CN103205686A true CN103205686A (en) | 2013-07-17 |
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| CN 201210010699 Pending CN103205686A (en) | 2012-01-16 | 2012-01-16 | Long-narrow trench mask plate for vapor plating |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103589996A (en) * | 2013-10-09 | 2014-02-19 | 昆山允升吉光电科技有限公司 | Mask plate |
| CN107077062A (en) * | 2014-11-04 | 2017-08-18 | 日本轻金属株式会社 | Epidermis supporting frame and manufacture method |
-
2012
- 2012-01-16 CN CN 201210010699 patent/CN103205686A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103589996A (en) * | 2013-10-09 | 2014-02-19 | 昆山允升吉光电科技有限公司 | Mask plate |
| CN107077062A (en) * | 2014-11-04 | 2017-08-18 | 日本轻金属株式会社 | Epidermis supporting frame and manufacture method |
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Application publication date: 20130717 |
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