CN103014619A - Mask plate and processing method thereof - Google Patents
Mask plate and processing method thereof Download PDFInfo
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- CN103014619A CN103014619A CN201210573283XA CN201210573283A CN103014619A CN 103014619 A CN103014619 A CN 103014619A CN 201210573283X A CN201210573283X A CN 201210573283XA CN 201210573283 A CN201210573283 A CN 201210573283A CN 103014619 A CN103014619 A CN 103014619A
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Abstract
The invention relates to a mask plate and a processing method thereof. The mask plate comprises an indium tin oxide (ITO) contact surface and an evaporation surface, wherein a plurality of evaporation holes are formed on the evaporation surface; the evaporation holes penetrate through the ITO contact surface from the evaporation surface, and the section of the evaporation holes is in a step shape; the evaporation holes comprise first sections and second sections which are coaxially arranged; the sizes of the evaporation holes are gradually shrunk from the first sections to the second sections. The processing of the evaporation holes is finished through a laser process only, the required secondary detachment and clamping process are saved in the process of processing the evaporation holes through multiple processes, and the mounting error brought by the operation of processing the evaporation holes through multiple processes is avoided, so that the processing precision and processing efficiency of the evaporation holes can be effectively improved, and the production cost of the mask plate is reduced; and the manufacturing cost of an organic light emitting diode (OLED) display screen is reduced, and the mask plate has wide market prospect.
Description
Technical field
The present invention relates to OLED shows and lighting technical field, particularly a kind of mask plate and working method thereof.
Background technology
Organic electroluminescence device has luminous, the reaction times is fast, the visual angle is wide, cost is low, manufacturing process is simple, resolving power is good and the multiple advantages such as high brightness, is considered to the emerging utilisation technology of follow-on flat-panel screens.At OLED(Organic Light-Emitting Diode, organic electroluminescent LED) in the technology, mask plate technology in the vacuum evaporation is an extremely important and crucial technology, and the grade of this technology directly affects quality and the manufacturing cost of OLED product.
When being applied to evaporation, the evaporation of traditional technology generally adopts positive and negative while etch process with mask plate, although can produce the opening with certain taper, but the reason owing to lateral erosion, so that being adjacent to the indium tin oxide contact surface opening of the indium tin oxide contact surface of evaporation ITO glass substrate, mask plate has back draught, the existence of this kind reversed cone angle, produce dead angle area, because the existence of this dead angle area, can't reach the evaporation thickness requirement, cause the one-tenth film uniformity of deposition material to reduce, affect evaporating quality, prolong the evaporation time, increased manufacturing cost.
General evaporation with the thickness of shadow mask (being mask plate) about 100 μ m, and the thickness of the organic material film of need evaporation is about 100nm, opening size minimum on the shadow mask can be 10 μ m, blocks so the sidewall of zero draft opening will certainly produce in evaporate process.On the other hand, if the method for the thickness by the attenuate shadow mask reduces the coverage extent of shadow mask, can affect again the work-ing life of shadow mask, because shadow mask is excessively thin, yielding, the use of the shadow mask of impact reduces evaporating quality.
Summary of the invention
Main purpose of the present invention is, for above-mentioned deficiency of the prior art, a kind of mask plate and working method thereof are provided, can improve rate of utilization and the yield polymer films of luminous organic material, can improve again the working (machining) efficiency of mask plate, have that technique is simple, good article rate is high, working (machining) efficiency is high, low cost of manufacture and an advantage such as practical.
For achieving the above object, the invention provides a kind of mask plate, comprise ITO contact surface and evaporation face, be provided with a plurality of evaporations hole at described evaporation face, described evaporation hole is through to described ITO contact surface from described evaporation face, and the cross section is stepped, and described evaporation hole comprises first paragraph and the second segment of coaxial setting, and the size in described evaporation hole is contraction-like gradually from described first paragraph to second segment.
Preferably, described first paragraph and second segment form by laser cutting, and cut direction is identical.
Preferably, described second segment is tapered, and the cone angle of described taper is 4 ~ 10 degree.
Preferably, the thickness of described mask plate is 18～190 μ m.
Preferably, the vertical depth of described second segment is 10～50 μ m.
Preferably, the material of described mask plate is any one in nickel cobalt (alloy), Rhometal, the indium watt alloy, and thickness is 18～45 μ m.
The present invention also provides a kind of working method of aforementioned mask plate, and this working method may further comprise the steps:
Adopt laser technology on described evaporation face, to process described first paragraph along the direction perpendicular to described ITO contact surface, and the controlled working surplus;
Adjust laser position, process described second segment along the machine direction of described first paragraph at described process redundancy.
Preferably, described process redundancy is 10 ~ 50 μ m.
The present invention adopts first laser technology to process the first paragraph in evaporation hole at the evaporation face, adjust again laser position, continuation continues to process second segment evaporation hole along the end of first paragraph to the ITO contact surface, because the hole wall in the evaporation hole that laser processing goes out is tapered, make the evaporation hole present the situation of shrinking gradually at mask plate, overcome the dead angle area that occurs in the traditional technology, so that when being applied to evaporation, the organic light emission particle can arrive the predetermined position on the glass substrate to large extent, thereby improved the quality of OLED display screen, improved rate of utilization and the yield polymer films of luminous organic material.Simultaneously, the present invention only finishes the processing in evaporation hole with laser technology, the secondary dismounting and the clamping operation that need when using kinds of processes processing evaporation hole have been saved, also avoided using kinds of processes to process the installation error that bring in the evaporation hole, but thereby working accuracy and the working (machining) efficiency in Effective Raise evaporation hole, reduce the production cost of mask plate, thereby reduced the manufacturing cost of OLED display screen, have wide market outlook.
Description of drawings
Fig. 1 is the structural representation of mask plate in the embodiment of the invention.
The realization of the object of the invention, functional characteristics and advantage are described further with reference to accompanying drawing in connection with embodiment.
Embodiment
Describe technical scheme of the present invention in detail below with reference to drawings and the specific embodiments, so as clearer, understand invention essence of the present invention intuitively.
Fig. 1 is the structural representation of mask plate in the embodiment of the invention.
With reference to shown in Figure 1, present embodiment provides a kind of mask plate 1, comprises ITO contact surface 11 and evaporation face 12, is provided with the evaporation hole 2 of a plurality of shapes that are centrosymmetric at evaporation face 12, and evaporation hole 2 is through to ITO contact surface 11 from evaporation face 12.The cross section in evaporation hole 2 is stepped, comprises first paragraph and the second segment of coaxial setting, and the size in evaporation hole is contraction-like gradually from first paragraph to second segment.
When evaporation, ITO contact surface 11 is fitted with the glass substrate that needs the evaporation luminous organic material up, and evaporation face 12 is faced evaporation source down.Vaporous luminous organic material particle in the evaporation source enters evaporation hole 2 from various directions, and is built-up in the ITO(tin indium oxide of glass substrate through this evaporation hole 2) on the layer, the formation vapor-deposited film.The shape of vapor-deposited film and thickness uniformity coefficient directly affect briliancy and the resolving power of OLED display screen, therefore, shape and the specification in evaporation hole 2 are had very strict requirement.The evaporation hole 2 of present embodiment is designed to sectional dimension and is contraction-like gradually from evaporation face 12 to ITO contact surface 11, the global shape that makes evaporation hole 2 is up-narrow and down-wide horn-like, be conducive to receive the luminous organic material particle with wider angle, thereby the thickness uniformity coefficient of vapor-deposited film and shape can both be met design requirement.
In addition, the thickness of the mask plate 1 of present embodiment is 18～190 μ m, both can guarantee the intensity of mask plate 1, avoids can avoiding again the yield polymer films that affects vapor-deposited film because of blocked up because the excessively thin evaporation hole 2 that causes is out of shape the work-ing life that shortens mask plate 1.
If mask plate 1 adopts any one material in nickel cobalt (alloy), Rhometal, the indium watt alloy to make, its thickness can be set to 18～45 μ m.For guaranteeing good article rate, improve working (machining) efficiency, cutting down finished cost, preferably the cone angle of second segment 22 is set to 4 ~ 10 degree, can not be too small, and also unsuitable excessive, like this, just can when satisfying the actual production requirement, reduce production costs to greatest extent.
The vertical depth of the second segment 22 of present embodiment is 10～50 μ m, and the vertical depth of second segment 22 should be not more than the vertical depth of first paragraph 21.Since second segment 22 tapered shapes, and the dimension precision requirement of second segment 22 on ITO contact surface 11 is very high, therefore, can adopt laser technology processing first paragraph 21, and the recycling laser technology processes second segment 22.Because the working accuracy of laser technology is high, the inclination angle is less, so the vertical depth of second segment 22 is unsuitable excessive.Consider precision and the intensity of mask plate 1, the vertical depth of second segment 22 is unsuitable too small again, in order to avoid affect the precision and stability of evaporation hole 2 on ITO contact surface 11.
The present invention also provides a kind of working method of aforementioned mask plate, and the method may further comprise the steps:
1, adopt laser technology on the evaporation face, to process first paragraph along the direction perpendicular to the ITO contact surface, and the controlled working surplus;
2, adjust laser position, process second segment along the machine direction of first paragraph at process redundancy.
In the above-mentioned steps, after first paragraph machined, process redundancy was controlled at 10 ~ 50 μ m, was used for the processing second segment, and the vertical depth that makes second segment is 10 ~ 50 μ m.
When the processing second segment, first first paragraph is processed, then adjust laser position, along the machine direction continuation processing of first paragraph, and form a step.Consider the requirement of strength of mask plate, the vertical depth of second segment is unsuitable too small, in order to avoid the evaporation hole that causes because second segment is excessively thin processing on the ITO contact surface deforms, is good so the vertical depth of second segment is 10～50 μ m.
In sum, the present invention adopts first laser technology to process the first paragraph in evaporation hole at the evaporation face, adjust again laser position, continuation continues to process second segment evaporation hole along the end of first paragraph to the ITO contact surface, because the hole wall in the evaporation hole that laser processing goes out is tapered, make the evaporation hole present the situation of shrinking gradually at mask plate, overcome the dead angle area that occurs in the traditional technology, so that when being applied to evaporation, the organic light emission particle can arrive the predetermined position on the glass substrate to large extent, thereby improved the quality of OLED display screen, improved rate of utilization and the yield polymer films of luminous organic material.Simultaneously, the present invention only finishes the processing in evaporation hole with laser technology, the secondary dismounting and the clamping operation that need when using kinds of processes processing evaporation hole have been saved, also avoided using kinds of processes to process the installation error that bring in the evaporation hole, but thereby working accuracy and the working (machining) efficiency in Effective Raise evaporation hole, reduce the production cost of mask plate, thereby reduced the manufacturing cost of OLED display screen, have wide market outlook.
The above only is the preferred embodiments of the present invention; be not so limit its claim; every equivalent structure or equivalent flow process conversion that utilizes specification sheets of the present invention and accompanying drawing content to do; directly or indirectly be used in other relevant technical fields, all in like manner be included in the scope of patent protection of the present invention.
Claims (8)
1. mask plate, comprise ITO contact surface and evaporation face, be provided with a plurality of evaporations hole at described evaporation face, described evaporation hole is through to described ITO contact surface from described evaporation face, and the cross section is stepped, it is characterized in that: described evaporation hole comprises first paragraph and the second segment of coaxial setting, and the size in described evaporation hole is contraction-like gradually from described first paragraph to second segment.
2. mask plate as claimed in claim 1, it is characterized in that: described first paragraph and second segment form by laser cutting, and cut direction is identical.
3. mask plate as claimed in claim 2, it is characterized in that: described second segment is tapered, and the cone angle of described taper is 4 ~ 10 degree.
4. mask plate as claimed in claim 3, it is characterized in that: the thickness of described mask plate is 18～190 μ m.
5. mask plate as claimed in claim 4, it is characterized in that: the vertical depth of described second segment is 10～50 μ m.
6. mask plate as claimed in claim 1, it is characterized in that: the material of described mask plate is any one in nickel cobalt (alloy), Rhometal, the indium watt alloy, and thickness is 18～45 μ m.
7. the working method of a mask plate, described mask plate comprises ITO contact surface and evaporation face, be provided with a plurality of evaporations hole at described evaporation face, described evaporation hole is through to described ITO contact surface from described evaporation face, and the cross section is stepped, it is characterized in that, described evaporation hole comprises first paragraph and the second segment of coaxial setting, the size in described evaporation hole is contraction-like gradually from described first paragraph to second segment, and described working method may further comprise the steps:
Adopt laser technology on described evaporation face, to process described first paragraph along the direction perpendicular to described ITO contact surface, and the controlled working surplus;
Adjust laser position, process described second segment along the machine direction of described first paragraph at described process redundancy.
8. the working method of mask plate as claimed in claim 7, it is characterized in that: described process redundancy is 10 ~ 50 μ m.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210573283XA CN103014619A (en) | 2012-12-26 | 2012-12-26 | Mask plate and processing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201210573283XA CN103014619A (en) | 2012-12-26 | 2012-12-26 | Mask plate and processing method thereof |
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| CN103014619A true CN103014619A (en) | 2013-04-03 |
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| CN201210573283XA Pending CN103014619A (en) | 2012-12-26 | 2012-12-26 | Mask plate and processing method thereof |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104096975A (en) * | 2013-04-10 | 2014-10-15 | 昆山思拓机器有限公司 | Method for manufacturing opening in OLED (organic light emitting diode) metal mask plate |
| CN104391426A (en) * | 2014-11-21 | 2015-03-04 | 胜科纳米（苏州）有限公司 | Mask |
| CN105349947A (en) * | 2015-10-27 | 2016-02-24 | 唐军 | Machining method for high-accuracy metal mask plate |
| CN105637113A (en) * | 2013-11-14 | 2016-06-01 | 大日本印刷株式会社 | Vapor deposition mask, vapor deposition mask with frame, and method for manufacturing organic semiconductor element |
| CN105848818A (en) * | 2013-12-04 | 2016-08-10 | 美商麦克鲁森公司 | System for drilling small holes; method of drilling a hole; article of manufacturing for perfoming drilling and a further method of drilling |
| CN109652760A (en) * | 2017-10-11 | 2019-04-19 | Ap系统股份有限公司 | Laser processing |
| CN114096694A (en) * | 2019-10-04 | 2022-02-25 | 凸版印刷株式会社 | Vapor deposition mask, method for manufacturing vapor deposition mask, and method for manufacturing display device |
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| CN202585543U (en) * | 2012-01-16 | 2012-12-05 | 昆山允升吉光电科技有限公司 | An electroforming mask plate |
| CN202576542U (en) * | 2012-01-16 | 2012-12-05 | 昆山允升吉光电科技有限公司 | Evaporation mask plate |
| CN202576545U (en) * | 2012-01-16 | 2012-12-05 | 昆山允升吉光电科技有限公司 | Grooved mask plate for evaporation |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104096975A (en) * | 2013-04-10 | 2014-10-15 | 昆山思拓机器有限公司 | Method for manufacturing opening in OLED (organic light emitting diode) metal mask plate |
| CN105637113A (en) * | 2013-11-14 | 2016-06-01 | 大日本印刷株式会社 | Vapor deposition mask, vapor deposition mask with frame, and method for manufacturing organic semiconductor element |
| CN105637113B (en) * | 2013-11-14 | 2019-10-15 | 大日本印刷株式会社 | The manufacturing method of deposition mask, the deposition mask of tape frame and organic semiconductor device |
| CN105848818A (en) * | 2013-12-04 | 2016-08-10 | 美商麦克鲁森公司 | System for drilling small holes; method of drilling a hole; article of manufacturing for perfoming drilling and a further method of drilling |
| CN105848818B (en) * | 2013-12-04 | 2019-04-30 | 美商麦克鲁森公司 | System for drilling through aperture；The method for drilling through hole；Further method for executing the manufacture article drilled through He drilling through |
| CN104391426A (en) * | 2014-11-21 | 2015-03-04 | 胜科纳米（苏州）有限公司 | Mask |
| CN105349947A (en) * | 2015-10-27 | 2016-02-24 | 唐军 | Machining method for high-accuracy metal mask plate |
| CN105349947B (en) * | 2015-10-27 | 2018-01-12 | 深圳浚漪科技有限公司 | High-precision metal mask plate processing method |
| CN109652760A (en) * | 2017-10-11 | 2019-04-19 | Ap系统股份有限公司 | Laser processing |
| CN114096694A (en) * | 2019-10-04 | 2022-02-25 | 凸版印刷株式会社 | Vapor deposition mask, method for manufacturing vapor deposition mask, and method for manufacturing display device |
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Free format text: FORMER OWNER: QIAN CHAO Effective date: 20140311 Owner name: NANJING CHENGCHAO OPTOELECTRONIC TECHNOLOGY CO., L Free format text: FORMER OWNER: TANG JUN Effective date: 20140311 |
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Free format text: CORRECT: ADDRESS; FROM: 518000 SHENZHEN, GUANGDONG PROVINCE TO: 210000 NANJING, JIANGSU PROVINCE |
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Effective date of registration: 20140311 Address after: 429 room 210000, building C, No. 606, Ning six road, Nanjing chemical industry park, Jiangsu, China Applicant after: Nanjing ultra Photoelectric Technology Co., Ltd. Address before: 3, building A12, building 518000, an industrial zone, Ho Ho, Ho Ho Ho, Shenzhen, Guangdong Applicant before: Tang Jun Applicant before: Qian Chao |
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Application publication date: 20130403 |